IO ESD Device and Methods for Forming the Same
A method includes forming an ESD diode including performing an epitaxy growth to form an epitaxy region comprising silicon and substantially free from germanium. The epitaxy region is doped with a p-type impurity to form a p-type region, wherein the p-type region forms an anode of the ESD diode.
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In Input/output (IO) circuits, large diodes occupying large chip areas are needed for Electro-Static Discharge (ESD) protection. For the ESD diodes, the ability to discharge ESD currents is partially determined by the sizes of the diodes. Accordingly, the diodes are designed as large as possible. Furthermore, required by design rules, the sizes of the anodes and cathodes of the diodes affect the widths of the metal lines directly over the respective anodes and cathodes. Accordingly, to gain good electro-migration performance of the metal lines directly over the diodes, the ESD diodes are designed to have large anode pickup regions and/or large cathode pickup regions, rather than comprising many narrow anode pickup regions and/or narrow cathode pickup regions.
When the process for forming the ESD diodes is integrated with the process for forming Fin Field-Effect Transistors (FinFETs), the large anode pickup regions and/or large cathode pickup regions may be formed by epitaxially growing the pickup regions from semiconductor fins, and the epitaxy regions grown from neighboring fins are merged to form large pickup regions. It has been found, however, that some of the large epitaxy regions may have much smaller thickness than small epitaxy regions that are formed simultaneously. As a result, significant leakage currents were generated in the ESD diodes.
For a more complete understanding of the embodiments, and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which:
The making and using of the embodiments of the disclosure are discussed in detail below. It should be appreciated, however, that the embodiments provide many applicable inventive concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are merely illustrative, and do not limit the scope of the disclosure.
An Electro-Static Discharge (ESD) diode and the method of forming the same are provided in accordance with various embodiments. The intermediate stages of forming the ESD diode are illustrated. The variations and the operation of the embodiments are discussed. Throughout the various views and illustrative embodiments, like reference numbers are used to designate like elements.
A plurality of semiconductor fins (which may be silicon fins) 120 are formed in device region 100. Semiconductor fins 120 are parallel to each other, and may have a substantially uniform spacing, or may have non-uniform spacings. In the illustrated embodiments, the lengthwise direction of semiconductor fins 120 is referred to as the X-direction. A plurality of gate electrodes 122 are formed crossing semiconductor fins 120. The lengthwise direction of gate electrodes 122 is in the Y-direction, which is perpendicular to the X-direction. Portions of gate electrodes 122 are on the sidewalls of portions of semiconductor fins 120. In some embodiments, in addition to forming on the sidewalls of the portions of semiconductor fins 120, gate electrodes 122 also extend over and overlapping the top surfaces of semiconductor fins 120. Gate electrodes 122 are separated from semiconductor fins 120 by gate dielectrics (not shown in
Referring to
In some embodiments, contact plug 172 and anode 32 may be coupled to a VSS node such as electrical ground (GND), while contact plug 164 and anode 142 may be coupled to a positive power supply node VDD (such as VDDIO). Conversely, a reversed connection scheme may also be used, wherein contact plug 164 and anode 142 may be coupled to the VSS node, while contact plug 172 and anode 32 may be coupled to the positive power supply node VDD. Alternatively, each of contact plugs 164 and 172 may be coupled to an IO input pad or an IO output pad. Due to the large interface area between p-type epitaxy regions 142, n-well region 32, and n-type pickup region 166, ESD diode 180 may have a high ESD current.
In conventional processes for forming the p-type region of the IO ESD diodes, the large p-type regions, which was formed simultaneously with (and hence was coupled with) the formation of silicon germanium stressors of p-type devices, were often thin. As a result, high leakage currents may be generated in the IO ESD devices since the contact plugs of the IO ESD devices may penetrate through the p-n junction of the resulting ESD diodes. Experiment results indicated that by decoupling the formation of p-type epitaxy regions of the ESD diodes from the formation of silicon germanium stressors of p-type FinFETs, silicon regions, rather than silicon germanium regions, may be formed to act as the large p-type epitaxy regions. As a result, the thickness of the large p-type epitaxy region may be close to the thickness of small epitaxy regions. For example, in
In accordance with embodiments, a method includes forming an ESD diode including performing an epitaxy growth to form an epitaxy region comprising silicon and substantially free from germanium. The epitaxy region is doped with a p-type impurity to form a p-type region, wherein the p-type region forms an anode of the ESD diode.
In accordance with other embodiments, a method includes forming a first plurality of semiconductor fins parallel to each other, and forming a first plurality of gate electrodes parallel to each other. Lengthwise directions of the first plurality of gate electrodes are perpendicular to lengthwise directions of the first plurality of semiconductor fins. The first plurality of gate electrodes is on top surface and sidewalls of portions of the first plurality of semiconductor fins. The method further includes forming a second semiconductor fin, and forming a second gate electrode on a top surface and sidewalls of a portion of the second semiconductor fin. Portions of the first plurality of semiconductor fins that are not covered by the first plurality of gate electrodes are etched to form first recesses. Portions of the second semiconductor fin that are not covered by the second gate electrode are etched to form second recesses. An epitaxy growth is performed to grow first epitaxy regions and second epitaxy regions simultaneously. The first epitaxy regions are grown from the first recesses, wherein the first epitaxy regions are merged to form a large epitaxy region. The second epitaxy regions are grown in the second recesses. The large epitaxy region is doped with a p-type impurity to form a p-type region, wherein the p-type region forms an anode of an ESD diode. The second epitaxy regions are doped with an n-type impurity to form source and drain regions of an n-type device.
In accordance with yet other embodiments, a device includes a semiconductor substrate, and an n-well region in the semiconductor substrate. A p-type semiconductor region is disposed over the n-well region, wherein the p-type semiconductor region and the n-well region form a p-n junction of an ESD diode. The p-type semiconductor region is substantially free from germanium.
Although the embodiments and their advantages have been described in detail, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the embodiments as defined by the appended claims. Moreover, the scope of the present application is not intended to be limited to the particular embodiments of the process, machine, manufacture, and composition of matter, means, methods and steps described in the specification. As one of ordinary skill in the art will readily appreciate from the disclosure, processes, machines, manufacture, compositions of matter, means, methods, or steps, presently existing or later to be developed, that perform substantially the same function or achieve substantially the same result as the corresponding embodiments described herein may be utilized according to the disclosure. Accordingly, the appended claims are intended to include within their scope such processes, machines, manufacture, compositions of matter, means, methods, or steps. In addition, each claim constitutes a separate embodiment, and the combination of various claims and embodiments are within the scope of the disclosure.
Claims
1. A method comprising:
- forming an Electro-Static Discharge (ESD) diode comprising: forming a first semiconductor fin; etching a portion of the first semiconductor fin to form a first recess; performing an epitaxy growth to form an epitaxy region, wherein the epitaxy region is grown from the first recess, and wherein the epitaxy region comprises silicon and is substantially free from germanium; and doping the epitaxy region with a p-type impurity to form a p-type region, wherein the p-type region forms an anode of the ESD diode.
2. (canceled)
3. The method of claim 1 further comprising:
- forming a second semiconductor fin adjacent to and parallel to the first semiconductor fin; and
- etching a portion of the second semiconductor fin to form a second recess, wherein a semiconductor material grown from the first and the second recesses is merged to form the epitaxy region.
4. The method of claim 3, wherein the step of etching the portion of the first semiconductor fin and the step of etching the portion of the second semiconductor fin are performed simultaneously.
5. The method of claim 1 further comprising:
- forming an additional semiconductor fin;
- etching a portion of the additional semiconductor fin to form an additional recess;
- performing an additional epitaxy growth to form an additional epitaxy region comprising silicon and substantially free from germanium in the additional recess, wherein the epitaxy growth and the additional epitaxy growth are performed simultaneously; and
- doping the additional epitaxy region with an n-type impurity to form an n-type region.
6. The method of claim 5, wherein the n-type region forms a source/drain region of an n-type transistor.
7. The method of claim 1, wherein the epitaxy region is over and contacting an n-well region, and wherein the n-well region forms a cathode region of the ESD diode.
8. A method comprising:
- forming a first plurality of semiconductor fins parallel to each other;
- forming a first plurality of gate electrodes parallel to each other, wherein lengthwise directions of the first plurality of gate electrodes are perpendicular to lengthwise directions of the first plurality of semiconductor fins, and wherein the first plurality of gate electrodes is on top surface and sidewalls of portions of the first plurality of semiconductor fins;
- forming a second semiconductor fin;
- forming a second gate electrode on a top surface and sidewalls of a portion of the second semiconductor fin;
- etching portions of the first plurality of semiconductor fins not covered by the first plurality of gate electrodes to form first recesses;
- etching portions of the second semiconductor fin not covered by the second gate electrode to form second recesses;
- performing an epitaxy growth to grow first epitaxy regions and second epitaxy regions simultaneously, wherein the first epitaxy regions are grown from the first recesses, wherein the first epitaxy regions are merged to form a large epitaxy region, and wherein the second epitaxy regions are grown in the second recesses;
- doping the large epitaxy region with a p-type impurity to form a p-type region, wherein the p-type region forms an anode of an Electro-Static Discharge (ESD) diode; and
- doping the second epitaxy regions with an n-type impurity to form source and drain regions of an n-type device.
9. The method of claim 8, wherein the step of etching the portions of the first plurality of semiconductor fins and the step of etching the portions of the second semiconductor fin are performed simultaneously.
10. The method of claim 8, wherein the n-type device is an n-type Fin Field-Effect Transistor (FinFET).
11. The method of claim 8, wherein the first and the second recesses have bottom surfaces lower than bottom surfaces of the first plurality of semiconductor fins and a bottom surface of the second semiconductor fin.
12. The method of claim 8, wherein the first and the second epitaxy regions comprise silicon and are substantially free from germanium.
13. The method of claim 8 further comprising:
- forming a third semiconductor fin;
- forming a third gate electrode on a top surface and sidewalls of a portion of the third semiconductor fin;
- etching portions of the third semiconductor fin not covered by the second electrode to form second recesses;
- performing an additional epitaxy growth to grow third epitaxy regions, wherein the first epitaxy regions and the third epitaxy regions are grown in separate process steps, and wherein the third epitaxy regions comprises silicon germanium; and
- doping the third epitaxy regions with a p-type impurity to form source and drain regions of a p-type device.
14-20. (canceled)
Type: Application
Filed: Jan 6, 2012
Publication Date: Jul 11, 2013
Patent Grant number: 8551841
Applicant: Taiwan Semiconductor Manufacturing Company, Ltd. (Hsin-Chu)
Inventors: Tung Ying Lee (Hsin-Chu), Wen-Huei Guo (Chu-Bei City), Chih-Hao Chang (Chu-Bei City), Shou-Zen Chang (Panchiao City)
Application Number: 13/345,473
International Classification: H01L 27/088 (20060101); H01L 21/336 (20060101); H01L 21/20 (20060101);