Abstract: The invention relates to a process for gettering semiconductor devices. A getter layer of amorphous or microcrystalline silicon is applied to the device. The so coated device is thermally treated and the getter layer is removed.

Abstract: A camera having a photovoltaic cell such as a solar cell is provided. A power supply circuit of a camera comprises a solar battery, a second battery and a switch. If the second battery is a secondary battery, the switch is closed to connect the solar and second batteries in parallel. Otherwise, the switch is kept open to disconnect the solar battery from the second battery. A particular upper cover structure is provided for mounting a photovoltaic device without deteriorating the rigidity and loosing light-tightness.

Abstract: Amorphous silicon solar cells have been shown to have efficiencies which degrade as a result of long exposure to light. Annealing such cells in air at a temperature of about 200.degree. C. for at least 30 minutes restores their efficiency.

Abstract: A clear solution is prepared by reacting metal alkoxide with a mixture of critical amounts of water and/or acid in an alcohol diluted medium. Alkoxides may be Ti(OR).sub.4 or Ta(OR).sub.5, or another metal alkoxide such as Si(OR).sub.4 in admixture with these alkoxides. Acids may be HCl or HNO.sub.3. Quarter wave inorganic optical coatings are deposited by applying the alkoxide solution to a substrate then heating the coating at over 350.degree. C. The coatings reduce reflectivity on silicon solar cells. The index of refraction of the coating can be varied by several techniques, including altering the proportion of titanium and silicon in the coating firing temperature, firing atmosphere. Thicknesses of the coating can be controlled by varying the rpm in spin application, withdrawal rate in dipping application, by concentration of the solution, by the type of solvent or the degree of polymerization of the titanium complexes.

Abstract: An integrated system and process for the continuous formation of p-n junctions in solar cells in a cost-effective manner and under computer control. The integrated system essentially comprises an ion beam implanter, an electron beam annealer and a combination vacuum lock-and-wafer transport system, all disposed within a unitary housing maintained under a common vacuum environment.The integrated system employs no wet chemistry operations and, is characterized by high reproducibility and narrow solar cell performance distribution.

Abstract: An energy efficient process is disclosed for the continuous production of semiconductor matrices formed from electrodepositing doped silicon or germanium films on metallic sheet substrates. The energy released from such electrodeposition can then be used to regenerate the anode material used in the electrodepositing position.

Abstract: For the dehumidification of a cavity preferably the intermediary space (3) between the glass sheets (1, 2) of a window, the dehumidifying device comprises a cell (5, 6, 7) shaped as a cartridge to be inserted in an opening in one of the glass sheets and so arranged as to absorb and by electrolysis to dissociate the water molecules from said cavity (3) by application of external energy. (FIG. 1).

Abstract: A semicrystalline silicon solar energy cell formed from individual grains of silicon having portions thereof at the light-receiving surface of the cell. An electrical junction is formed at said light-receiving surface and extends across and below that surface and into and between the boundaries of adjoining grains to an extent such that the total junction area substantially exceeds the product of the linear dimensions of the wafer surface but does not extend completely around the boundaries of the silicon grains or to the opposed surface of the wafer.