Abstract: A method of manufacturing a printed circuit board includes providing an insulating layer, forming a plating seed layer on the insulating layer, forming a first circuit pattern on the plating seed layer and a second circuit pattern on the first circuit pattern, and forming a top metal layer on the second circuit pattern. The second circuit pattern can be thinner than the first circuit pattern, and the top metal layer can be wider than the second circuit pattern.

Abstract: A heat transfer module can include an envelope sealed to define an internal volume that contains a working fluid and a wick disposed on an internal surface of the envelope. The wick and envelope each has a first portion extending through an evaporator region and a second portion extending through adiabatic and condenser regions. The first portion of the wick is a metal hydride. The first portion of the envelope includes a metal liner surrounding the first portion of the wick, a first diffusion barrier layer disposed between the first portion of the wick and the metal liner, and a ceramic matrix composite cladding surrounding the metal liner. The second portions of the wick and envelope each includes a refractory metal and/or stainless steel.

Abstract: An alpha-alumina coated turbocharger turbine wheel includes a hub portion, a plurality of blades disposed about the hub portion, each blade of the plurality of blades having a leading edge and a trailing edge, a centerline passing axially through the hub portion, and a back-side wall defined radially between the leading edge of each blade of the plurality of blades and the centerline. The turbocharger turbine wheel is made of a metal alloy and a surface coating layer of alpha-alumina. The surface coating layer of alpha-alumina may be disposed only on the hub portion, the plurality of blades, and a radially-outer portion of the back-side wall. The radially-outer portion is defined between a radial distance from the centerline and the leading edge of each blade of the plurality of blades. Alternatively, the surface coating layer of alpha-alumina may be disposed on the hub portion, the plurality of blades, and an entirety of the back-side wall.

Abstract: A device includes a dielectric layer having a first surface and a second surface. The device also includes a first set of high-aspect ratio electroplated structures disposed on the first surface of the dielectric layer and a second set of high-aspect ratio electroplated structures disposed on the second surface of the dielectric layer opposite the first set of high-aspect ratio electroplated structures.

Abstract: In any overhead job, operators will feel more relaxed and safer. In any systems, the operators won't have to spend days for masking and sealing. Simple protection will be enough. With this unit operators can use toxic solutions like cadmium and silver without any health concern, because the anode returns the toxic vapors back to the chamber and filtered suction line in front of the exhaust valve will take the toxic vapor away. Pit filling anode save the workers time and effort drastically by filling the pits bottom up in one shot.

Abstract: A plating apparatus and an operation method thereof are provided. The plating apparatus includes: a tank body including at least one side wall, the at least one side wall being provided with an opening extending from the inside to the outside of the tank body, and the tank body being configured to accommodate a plating solution; and a fixing device configured to fix the substrate at the opening of the side wall. The operation method of the plating apparatus includes: placing the substrate on an outer side of the side wall and at the position of the opening, and operating the fixing device to fix the substrate; and performing plating treatment on the substrate.

Abstract: The present invention provides an aqueous composition comprising tin ions and at least one compound of formula I wherein X1 is selected from a linear or branched C1-C12 alkanediyl, which may optionally be interrupted by O or S or a C5 to C12 aromatic moiety, R11 is a copolymer of ethylene oxide and a further C3 to C6 alkylene oxide, wherein the content of ethylene oxide is from 5 to 30% by weight, R12 is selected from H, R11, R40, R13, R14, are (a) independently selected from H, R11, R40, or (b) may together form a divalent group X13; X13 is selected from a linear or branched C1-C12 alkanediyl, which may optionally be interrupted by O, S or NR43; R40 is H or a linear or branched C1-C20 alkyl, R43 is selected from H, R11 and a linear or branched C1-C20 alkyl.

Abstract: An electroplated cobalt deposit and a method of electrodepositing cobalt on a surface to produce a level deposit across the surface of the substrate. The cobalt electrolyte contains (1) a source of cobalt ions; (2) boric acid; (3) a pH adjuster; and (4) an organic additive, which contains a suppressor. The electroplated cobalt deposit exhibits a level surface such that the thickness difference across substantially the entire surface of the substrate of less than about 200 nm.

Abstract: Methods and apparatus for determining whether a substrate includes an unacceptably high amount of oxide on its surface are described. The substrate is typically a substrate that is to be electroplated. The determination may be made directly in an electroplating apparatus, during an initial portion of an electroplating process. The determination may involve immersing the substrate in electrolyte with a particular applied voltage or applied current provided during or soon after immersion, and recording a current response or voltage response over this same timeframe. The applied current or applied voltage may be zero or non-zero. By comparing the current response or voltage response to a threshold current, threshold voltage, or threshold time, it can be determined whether the substrate included an unacceptably high amount of oxide on its surface. The threshold current, threshold voltage, and/or threshold time may be selected based on a calibration procedure.

Abstract: A substitution gold plating solution for performing uniform gold plating directly on copper wiring of a printed circuit board is provided and a gold plating method using the same is provided, the solution comprising a purine-based compound or a pyrimidine-based compound having a carbonyl oxygen used as a localized corrosion inhibitor, a water-soluble gold compound, an aminocarboxylic acid as a complexing agent, a dicarboxylic acid as a conductivity improving agent, an ?-hydroxycarboxylic acid and heteroaryl carboxylic acid as a base metal elution and reprecipitation preventing agent, a sulfite compound as a gold ion stabilizer, an axole compound as a surface corrosion inhibitor, other surfactants, crystal regulators, pH adjuster, and buffers. The substitution-type electroless gold plating solution according to the present invention prevents the localized corrosion of the copper surface, which is the base metal, and thus the gold plating film produced is excellent in solder mounting reliability.

Abstract: A first semiconductor die and a second semiconductor die can be bonded in a manner that enhances alignment of bonding pads. Non-uniform deformation of a first wafer including first semiconductor dies can be compensated for by forming a patterned stress-generating film on a backside of the first wafer. Metallic bump portions can be formed on concave surfaces of metallic bonding pads by a selective metal deposition process to reduce gaps between pairs of bonded metallic bonding pads. Pad-to-pad pitch can be adjusted on a semiconductor die to match the pad-to-pad pitch of another semiconductor die employing a tilt-shift operation in a lithographic exposure tool. A chuck configured to provide non-uniform displacement across a wafer can be employed to hold a wafer in a contoured shape for bonding with another wafer in a matching contoured position. Independently height-controlled pins can be employed to hold a wafer in a non-planar configuration.

Abstract: A catalyst for a catalytic ink includes a support particle and a metallic material supported on the support particle. The metallic material is diamminesilver hydroxide, a silver salt, a palladium salt, a gold salt, chloroauric acid, or combinations thereof. A catalytic ink obtained from the catalyst and use of the same to fabricate a conductive circuit are also disclosed.

Abstract: An apparatus and method for electrochemically depositing a unitary layer structure using a reactor configured to contain an electrolyte solution with an anode array containing a plurality of independently electrically controllable anodes arranged in a two-dimensional array, a cathode, an addressing circuit for receiving a signal containing anode address data and for outputting a signal causing an anode array pattern; and, a controller. in communication with the addressing circuit and the anode array, configured to electrically control each anode in the anode array to cause an electrochemical reaction at the cathode that deposits a unitary layer structure according to the anode array pattern signal.

Abstract: The present application relates to a method of manufacturing an ink-jet printhead comprising: providing a silicon substrate (10) including active ejecting elements (11); providing a hydraulic structure layer (20) for defining hydraulic circuits configured to enable a guided flow of ink; providing a silicon orifice plate (30) having a plurality of nozzles (31) for ejection of the ink; assembling the silicon substrate (10) with the hydraulic structure layer (20) and the silicon orifice plate (30); wherein providing the silicon orifice plate (30) comprises: providing a silicon wafer (40) having a planar extension delimited by a first surface (41) and a second surface (42) on opposite sides of the silicon wafer (40); performing a thinning step at the second surface (42) so as to remove from the second surface (42) a central portion (43) having a preset height (H), the silicon wafer (40) being formed, following the thinning step, by a base portion (44) having a planar extension and a peripheral portion (45) extend

Abstract: Disclosed embodiments provide a method and apparatus for continuous production of micro/nanoscale particles using roll-to-roll manufacturing in combination with electroplating. The roll-to-roll process can move a mechanically flexible reel stock material along rotating elements designed to position the material for various additive, subtractive, and modification processes. In accordance with at least one embodiment, processes applied at various stations may include sputtering, electroplating, and/or etching.

Abstract: A keyboard key structure includes a plurality of keycaps. Each keycap has a keycap body and an outward layer. The keycap body has an appearance with a first color. The outward layer has an appearance with a second color different from the first color. The outward layer is formed above the keycap body. The outward layer is formed with an engraving portion. The first color is exposed in the engraving portion. The present invention also provides a method of manufacturing a keycap of a keyboard key.

Abstract: An electrical probe is disclosed for measuring an electrical response from a biological cell. The electrical probe includes a tungsten microwire having a sharpened tip section, a catalyst layer formed on the sharpened tip section of the tungsten microwire, and an array of nanotube electrodes vertically aligned on the catalyst layer. The catalyst layer includes a catalyst bilayer including a nickel layer over a gold layer, and the nanotube electrodes include a plurality of silicon nanotubes (SiNTs).

Abstract: Systems and methods for achieving uniformity across a redistribution layer are described. One of the methods includes patterning a photoresist layer over a substrate. The patterning defines a region for a conductive line and a via disposed below the region for the conductive line. The method further includes depositing a conductive material in between the patterned photoresist layer, such that the conductive material fills the via and the region for the conductive line. The depositing causes an overgrowth of conductive material of the conductive line to form a bump of the conductive material over the via. The method also includes planarizing a top surface of the conductive line while maintaining the patterned photoresist layer present over the substrate. The planarizing is facilitated by exerting a horizontal shear force over the conductive line and the bump. The planarizing is performed to flatten the bump.

Abstract: In one embodiment, an apparatus includes a plurality of layers in a circuit board, each of the layers comprising a fiber weave, two plated holes extending through the layers and connecting two or more of the layers, and a non-plated hole interposed between the plated holes. The non-plated hole passes through a potential CAF (Conductive Anodic Filament) migration path along the fiber weave to prevent CAF formation between the plated holes.

Abstract: This disclosure relates generally to the discovery of improved methods of reducing corrosion on metals and metal alloys without using hexavalent chromium reagents. More particularly, the disclosure relates to preparing corrosion resistant metals using doped conducting polymers such as polyaniline (PANI) on metal alloys such as aluminum alloys.

Abstract: A method of plating a metal layer on a work piece includes exposing a surface of the work piece to a plating solution, and supplying a first voltage at a negative end of a power supply source to an edge portion of the work piece. A second voltage is supplied to an inner portion of the work piece, wherein the inner portion is closer to a center of the work piece than the edge portion. A positive end of the power supply source is connected to a metal plate, wherein the metal plate and the work piece are spaced apart from each other by, and are in contact with, the plating solution.

Abstract: Embodiments of the present technology may include an electroplating system. The electroplating system may include a vessel. The system may also include a wafer holder configured for holding a wafer in the vessel. The system may further include an anode in the vessel. In addition, the method may include a plurality of thief electrodes. For each thief electrode of the plurality of thief electrodes, a thief current channel may be defined by a channel wall. The channel wall for each thief electrode may define an aperture adjacent to the wafer holder. The thief current channel may extend from each thief electrode to the aperture. The system may include a current control system in electrical communication with the plurality of thief electrodes. The current control system may be configured such that an amount of current delivered to each thief electrode can be adjusted independently.

Abstract: An electronic device includes a substrate and at least two electrodes spaced by a nanogap, wherein the at least two electrodes are bridged by at least one nanoparticle and wherein the at least one nanoparticle has an overlap area with the at least two electrodes higher than 2% of the area of the at least one nanoparticle. A method of manufacturing of the electronic device and the use of the electronic device in photodetector, transistor, phototransistor, optical modulator, electrical diode, photovoltaic cell or electroluminescent component are also described.

Abstract: A plating method which can achieve a desired dome height is disclosed. The method includes: preparing correlation data showing a relationship between proportion of dome height to bump height and concentration of chloride ions; producing a plating solution containing chloride ions at a concentration which has been selected based on a desired proportion of dome height to bump height and on the correlation data, the selected concentration being in a range of 100 mg/dm3 to 300 mg/dm3; immersing a substrate in the plating solution; and passing an electric current between an anode and the substrate, both immersed in the plating solution, thereby plating the substrate to form bumps.

Abstract: The embodiments herein relate to methods and apparatus for electroplating one or more materials onto a substrate. Typically, the embodiments herein utilize a channeled plate positioned near the substrate, creating a cross flow manifold between the channeled plate and substrate, and on the sides by a flow confinement ring. A seal may be provided between the bottom surface of a substrate holder and the top surface of an element below the substrate holder (e.g., the flow confinement ring). During plating, fluid enters the cross flow manifold through channels in the channeled plate, and through a cross flow inlet, then exits at the cross flow exit, positioned opposite the cross flow inlet. The apparatus may switch between a sealed state and an unsealed state during electroplating, for example by lowering and lifting the substrate and substrate holder as appropriate to engage and disengage the seal.

Abstract: A cap assembly for optical communications comprising a housing that includes a front side perpendicular from a bottom side, opposing parallel first and second sides perpendicular from the bottom side, and a back side disposed perpendicularly between the first side and the second side offset from respective ends of the first side and the second side opposite the front side. The back side includes an opening there-through and a three-sided ledge formed along an interior of the first side leg, an exterior of the back side, and an interior of the second side leg. The cap assembly further includes a window configured to contact the three-sided ledge of the back side, the glass panel covering the opening there-through and attached to the assembly via a solder pre-form.

Abstract: A seed layer of aluminum is deposited over a wafer. A layer of photoresist material is deposited over the seed layer of aluminum. The photoresist material is patterned and developed to expose portions of the seed layer of aluminum through openings in the photoresist material. An electrochemical transformation process is performed on the wafer to electrochemically transform the portions of the seed layer of aluminum that are exposed through openings in the photoresist material into anodic aluminum oxide (AAO). The AAO includes a pattern of holes that extend through the AAO to expose areas of the top surface of the wafer beneath the seed layer of aluminum. The photoresist material is removed from the wafer. The wafer is exposed to a plasma to etch holes into the wafer at the areas of the top surface of the wafer that are exposed by the pattern of holes in the AAO.

Abstract: An apparatus includes a laminate and a lid. The laminate generally includes a dielectric layer between a first conductive layer and a second conductive layer. The first conductive layer may include a probe configured to transfer a radio-frequency signal in a millimeter-wave band. The second conductive layer may be configured to provide a continuous ground plane parallel to the probe and separated from the probe by the dielectric layer. A plurality of channels may be (a) formed into a side of the second conductive layer opposite the dielectric layer, (b) formed to a depth less than a thickness of the second conductive layer, and (c) sized to permit gasses formed while securing the laminate to a substrate to escape from between the laminate and the substrate. The lid may be in contact with the first conductive layer.

Abstract: A method for manufacturing a strip of impregnated anodized aluminum, for use in a coil of an electrotechnical component, said coil including an interstitial material providing dielectric cohesion and insulation functions, said interstitial material being suitable for cross-linking, in other words for forming, by chemical reactions between the components thereof when subjected to certain physical conditions, molecular structures being organized in a lattice, the method comprising: a step of applying the precursor mixture of said interstitial material to the anodized aluminum; at least one step of cross-linking the precursor mixture in order to form said interstitial material on the strip of aluminum; wherein the anodized aluminum has not been subjected to the sealing of the pores of the alumina formed by anodization prior to the application of the precursor mixture of said interstitial material.

Abstract: This disclosure provides systems and methods for a two-dimensional material-based accelerometer. In one embodiment, an accelerometer comprises a substrate; a membrane suspended over an opening in the substrate to form a suspended membrane, wherein the membrane is composed of a two-dimensional material; a mass structure coupled to the suspended membrane; and wherein the mass structure distorts the suspended membrane about a first axis in response to an applied acceleration providing a first change in a conductance of the suspended membrane so that the applied acceleration along the first axis can be detected.

Abstract: A method of fabricating a liquid-based masking layer for a wet etching process, is disclosed. The method comprises forming a coated solid substrate by coating a solid substrate with a coating; forming a preliminary masking layer by removing parts of the coating which are not included in a pattern; depositing a porous surface on the preliminary mask to obtain a porous preliminary mask; forming a liquid-based masking layer by filling the pores of the porous preliminary mask with a filling liquid; and applying an etchant to a surface of the solid substrate and the liquid-based masking layer, etching parts of the substrate that are not covered with the liquid-based masking layer.

Abstract: A variety of nanostructures are provided having a metal nanowire having a plurality of faces extending along a length of the nanowire, and a plurality of semiconductor nanorods forming two or more nanorod arrays, wherein each of the nanorod arrays is attached to a different surface of the nanowire. For example, in some embodiments, the nanostructure is a silver nanowire having a pentagonal cross section and five faces extending along the length of the nanowire, and metal oxide nanorods forming five nanorod arrays extending along each of the five faces of the silver nanowire. The nanostructures can demonstrate high temperature coefficients of resistance, and can be used in a variety of bolometric materials. In some embodiments, bolometric materials are provided including a plurality of the nanostructures deposited onto a surface of a substrate. Methods of making the nanostructures and bolometers are also provided.

Abstract: The present invention relates to the fabrication of complicated electronic and/or mechanical structures and devices and components using homogeneous or heterogeneous 3D additive build processes. In particular the invention relates to selective metallization processes including electroless and/or electrolytic metallization.

Abstract: A cell unit includes a cell stack, two manifolds. The cell stack includes cells. Each cell has a elliptical columnar shape. The each cell includes an inner electrode layer, a solid oxide solid electrolyte layer, an outer electrode layer, a first portion, a second portion, a middle portion and a distribution hole. The solid oxide solid electrolyte layer is on the inner electrode layer. The outer electrode layer is on the solid oxide solid electrolyte layer. The first portion is at one end of the each cell in the length direction of the cells. The second portion is at the other end of the each cell in the length direction. The middle portion is located between the first portion and the second portion. The distribution hole passes through from the first portion to the second portion. A first manifold fixes the first portions. A second manifold fixes the second portions.

Abstract: A barrier layer is formed over electrically conductive contact pads on a substrate such as a wafer. A photoresist layer is applied over the barrier layer, and openings in the photoresist layer are filled with solder to form solder bumps. The barrier layer may be removed from within the openings prior to filling the openings with solder. The process is applicable to fine pitch architectures and chip size packaging substrates. The photoresist layer and portions of the barrier layer outside of the openings are removed following solder fill.

Abstract: Disclosed herein are electroplating systems for forming a layer of metal on a wafer which include an electroplating module and a wafer edge imaging system. The electroplating module may include a cell for containing an anode and an electroplating solution during electroplating, and a wafer holder for holding the wafer in the electroplating solution and rotating the wafer during electroplating. The wafer edge imaging system may include a wafer holder for holding and rotating the wafer through different azimuthal orientations, a camera oriented for obtaining multiple azimuthally separated images of a process edge of the wafer while it is held and rotated (the process edge corresponding to the outer edge of the layer of metal formed on the wafer), and image analysis logic for determining an edge exclusion distance, wherein the edge exclusion distance is a distance between the wafer's edge and the process edge.

Abstract: On seed metal layer of first metal, pedestal and counter electrode are formed of second metal by plating, adjacent to free space region. The free space region is filled with first sacrificial layer. By using resist pattern, second sacrificial metal layer is formed, extending from the first sacrificial layer to a portion of the pedestal, and lower structure of third metal is formed on the second sacrificial layer, by contiguous plating, exposing a portion of the pedestal not formed with the second sacrificial layer, the third metal having composition and thermal expansion coefficient equivalent to the second metal. Upper structure of fourth metal having composition and thermal expansion coefficient equivalent to the second and third metals is formed on the pedestal and the lower structure by plating. The first and second sacrificial layers are removed, leaving an electric equipment with a movable portion.

Abstract: Composite structures that have an appearance of an anodized bulk metal but that is non-capacitive and/or radio frequency (RF) transparent are disclosed. The composite structure can be part of an enclosure of an electronic device. The composite structure can give the enclosure a metallic look without interfering with the functioning of some electronic components of the electronic device, such as RF antennas, touch pads and touch screens. Some embodiments involve forming a metal oxide layer and depositing a non-capacitive layer on the metal oxide layer. Some embodiments involve forming an imitation metal oxide layer and depositing a non-capacitive layer on the imitation metal oxide layer.

Abstract: To provide a wiring board ensuring adhesion strength of a connecting terminal to reduce the connecting terminal from being fallen over or peeled off under fabrication process. The wiring board according to the present invention includes a laminated body where one or more layer of each of an insulating layer and a conductor layer are laminated. The wiring board includes a plurality of connecting terminals formed separately from one another on the laminated body and a filling member filled up between the plurality of connecting terminals. The filling member is filled up to a position lower than a height of the plurality of connecting terminals. The connecting terminals has a cross section with a trapezoidal shape where a width of a first principal surface on a side contacting the laminated body is wider than a width of a second principal surface facing the first principal surface.

Abstract: An electroplating apparatus that promotes uniform electroplating on the substrates having thin seed layers includes a convex anisotropic high resistance ionic current source (AHRICS), such as an electrolyte-permeable resistive domed plate. The AHRICS is positioned in close proximity of the substrate, so that a distance from the central portion of the AHRICS to the substrate is smaller than the distance from the edge portion of the AHRICS to the substrate. The apparatus further includes a plating chamber configured to hold the electrolyte and an anode. The apparatus further includes a substrate holder configured to hold the substrate. In some embodiments, the apparatus further includes a secondary (thief) cathode configured to divert ionic current from the near-edge region of the substrate.

Abstract: The present invention relates to a dry film for an optical waveguide which has a carrier base material, a resin layer for an optical waveguide that can be cured by active energy ray or heat, and a protective film. The surface of the protective film that is in contact with the resin layer for an optical waveguide is a roughened surface.

Abstract: A method of plating a metal layer on a work piece includes exposing a surface of the work piece to a plating solution, and supplying a first voltage at a negative end of a power supply source to an edge portion of the work piece. A second voltage is supplied to an inner portion of the work piece, wherein the inner portion is closer to a center of the work piece than the edge portion. A positive end of the power supply source is connected to a metal plate, wherein the metal plate and the work piece are spaced apart from each other by, and are in contact with, the plating solution.

Abstract: A method for creating electrically conducting or semiconducting patterns on a textured surface including plural reliefs of amplitude greater than or equal to 100 nanometers, including: preparing a substrate during which at least the textured surface of the substrate is made electrically conducting; coating during which at least one layer of an imprintable material is laid on the textured surface, made electrically conducting, of the substrate; pressing a mold including valleys or protrusions to transfer the valleys or the protrusions of the mold into the imprintable material to form patterns therein; removing the mold while leaving the imprint of the patterns in the imprintable material; exposing the textured surface, made electrically conducting, of the substrate, at a bottom of the patterns; and electrically depositing an electrically conducting or semiconducting material into the patterns to form conducting or semiconducting patterns.

Abstract: Multi-layer structures are electrochemically fabricated by depositing a first material, selectively etching the first material (e.g. via a mask), depositing a second material to fill in the voids created by the etching, and then planarizing the depositions so as to bound the layer being created and thereafter adding additional layers to previously formed layers. The first and second depositions may be of the blanket or selective type. The repetition of the formation process for forming successive layers may be repeated with or without variations (e.g. variations in: patterns; numbers or existence of or parameters associated with depositions, etchings, and or planarization operations; the order of operations, or the materials deposited). Other embodiments form multi-layer structures using operations that interlace material deposited in association with some layers with material deposited in association with other layers.

Abstract: A method and composition for electroplating Cu onto a substrate in the manufacture of a microelectronic device involving and electrolytic solution containing a source of Cu ions and a quaternized pyridinium salt compound for leveling.

Abstract: A membrane electrode includes a novel sensor combining a filtering function of a membrane and a signal measuring ability of an electrode. A target material may be measured by filtration through the membrane. A small amount of target materials may be detected with high sensitivity using an amplified electrical signal by increasing electrical conductivity by reducing metal ions on the membrane, and thus the target material may be subject to quantitative analysis. In addition, only a target material selectively binding to a receptor may be filtrated by passing a sample through the membrane after a receptor material is fixed to the electrode, and thus may be used to detect an electrical signal. In addition, the sensor may measure a signal in various methods such as electrical conductivity, impedance, etc.

Abstract: Techniques include methods for creating contacts for microchips, solar films, etc., for electrically connecting conductive elements and/or for current spreading. Embodiments herein include using an oversized “board” or contact array positioned between a lower layer and an upper layer. This contact array is created by directed self-assembly (DSA) of block copolymers. The lower and upper layers can have conductive structures such as lines. The oversized board can be comprised of hundreds, thousands, millions (etc.) of small conductive contact cylinders, lines or other vertical structures, with each conductive structure electrically isolated from adjacent conductive structures in the array. A crossover location of a line on a lower level with a line on an upper level is connected with multiple conductive structures located at the cross over location.

Abstract: Prior to electrodeposition, a semiconductor wafer having one or more recessed features, such as through silicon vias (TSVs), is pretreated by contacting the wafer with a pre-wetting liquid comprising a buffer (such as a borate buffer) and having a pH of between about 7 and about 13. This pre-treatment is particularly useful for wafers having acid-sensitive nickel-containing seed layers, such as NiB and NiP. The pre-wetting liquid is preferably degassed prior to contact with the wafer substrate. The pretreatment is preferably performed under subatmospheric pressure to prevent bubble formation within the recessed features. After the wafer is pretreated, a metal, such as copper, is electrodeposited from an acidic electroplating solution to fill the recessed features on the wafer. The described pretreatment minimizes corrosion of seed layer during electroplating and reduces plating defects.

Abstract: A component includes a substrate and a capacitor formed in contact with the substrate. The substrate can consist essentially of a material having a coefficient of thermal expansion of less than 10 ppm/° C. The substrate can have a surface and an opening extending downwardly therefrom. The capacitor can include at least first and second pairs of electrically conductive plates and first and second electrodes. The first and second pairs of plates can be connectable with respective first and second electric potentials. The first and second pairs of plates can extend along an inner surface of the opening, each of the plates being separated from at least one adjacent plate by a dielectric layer. The first and second electrodes can be exposed at the surface of the substrate and can be coupled to the respective first and second pairs of plates.

Abstract: A combined scribing/filling device for scribing a desired channel, trough, trench or groove in a layer currently being fabricated and simultaneously filling the scribed channel, trough, trench or groove with a desired filling material. The combined scribing/filling device comprises (1) a scribing tool having a scribing tip which facilitates scribing of the desired channel, trough, trench or groove in the layer currently being fabricated; and a dispensing/shaping orifice for filling the scribed channel, trough, trench or groove with the filling material. The scribing tip is located coincident with respect to the dispensing/shaping orifice to facilitate simultaneously scribing and filling of the channel, trough, trench or groove. A method of fabricating a three dimensional model from a composite model formed by a plurality of layers, by simultaneously scribing and filling of the channel, trough, trench or groove is also disclosed.