Abstract: A semiconductor device has a resistor area and wiring area selectively disposed on a semiconductor substrate. In this semiconductor device, a second interlayer insulating film is formed above the semiconductor substrate, and a thin-film resistor is disposed on the second interlayer insulating film in the resistor area. Vias that contact the thin-film resistor from below are formed in the second interlayer insulating film. A wiring line is disposed on the second interlayer insulating film in the wiring area. A dummy wiring line that covers the thin-film resistor from above is disposed in a third wiring layer that is in the same layer as the wiring line, and an insulating film is interposed between the thin-film resistor and the dummy wiring line.

Abstract: A method for removing copper-oxide from copper powder, the method comprising: providing a copper powder defined by each particle having a copper core and a copper-oxide layer surrounding the copper core; disposing the particles in an etching solution in a container, wherein the etching solution removes the copper-oxide layer from each particle; decanting the etching solution and by-products; washing the particles; disposing the washed particles in an organic solvent; coating each copper core with an organic material from the organic solvent; dispersing the particles in the organic solvent; and providing the copper powder as dispersed copper cores that are absent a copper-oxide layer and have an organic coating, wherein the steps of dispersing in the etching solution, decanting, washing, disposing in the organic solvent, coating, and dispersing are performed in situ with the plurality of particles disposed in liquid, absent any exposure of the copper cores to air.

Abstract: Chemically and mechanically protective oxide film was formed on Mg alloys using micro-arc oxidation (MAO) methods. Further modification of the obtained MAO surfaces was made in various aspects and the processes thereof were described. Firstly, the protection is enhanced by forming super-hydrophobic surfaces, with water contact angle higher than 140°, attributed to hierarchical nano-micro structures. Secondly, the electrical property of the MAO surfaces is modified. A film with sheet resistance as low as 0.05 ?/sq is achieved by electro-less Ni deposition on MAO surfaces. Thirdly, black colors are achieved by the sol-gel process on MAO samples.

Abstract: Methods of growing a multilayer graphene film (10) include flowing a weak oxidizing vapor (OV) and a gaseous carbon source (CS) over a surface (SGC) of a carbonizing catalyst (GC) in a CVD reaction chamber (2). Carbon atoms (C) deposit on the carbonizing catalyst surface to form sheets of single-layer graphene (12) upon cooling. The method generates a substantially uniform stacking of graphene layers to form the multilayer graphene film. The multilayer graphene film is substantially uniform and has a relatively large scale as compared to graphene films formed by prior-art methods.

Abstract: A patterned transparent conductor including a conductive layer coated on a substrate is described. More specifically, the transparent conductor can be patterned by screen-printing an acidic etchant formulation on the conductive layer. A screen-printable etchant formulation is also disclosed.

Abstract: A method for preparing a copper alloy given a certain special surface shape yields tremendous bonding strength through compatibility with an epoxy resin adhesive. With a composite part in which this technology is utilized to integrate a copper alloy member as a cover material with a CFRP, it is possible to take advantage of the characteristics of both the copper alloy and the FRP due to the tremendous bonding strength. In a step in which an FRP prepreg is put into a mold and heated and cured, usually the mold is first coated with a release agent to facilitate release from the mold, but with high-technology CFRP, bleeding of the release agent often diminishes the properties. A copper alloy sheet 21 is used as a cover material, and a CFRP 22 is cured.

Abstract: Banks, as well as a plurality of recess-shaped cells defined by the banks, are provided in an image section formed in a gravure printing plate. A projecting portion is provided in each of the cells so as to protrude from a part of the base surface of that cell. The projecting portions are in positions distanced from the banks. Like the banks, the projecting portions can serve as starting points for the transfer of a printing paste. Accordingly, printing paste that would, in the case where the projecting portions are not provided, remain in the bases of the cells is transferred to the printing target material via the projecting portions, which increases the transfer efficiency. As a result, a paste film that is smooth and has the required thickness can be printed.

Abstract: A nanogap of controlled width in-between noble metals is produced using sidewall techniques and chemical-mechanical-polishing. Electrical connections are provided to enable current measurements across the nanogap for analytical purposes. The nanogap in-between noble metals may also be formed inside a Damascene trench. The nanogap in-between noble metals may also be inserted into a crossed slit nanopore framework. A noble metal layer on the side of the nanogap may have sub-layers serving the purpose of multiple simultaneous electrical measurements.

Abstract: Anode foils suitable for use in electrolytic capacitors, including those having multiple anode configurations, have improved strength, reduced brittleness, and increased capacitance compared to conventional anode foils for electrolytic capacitors. Exemplary methods of manufacturing an anode foil suitable for use in an electrolytic capacitor include disposing a resist material in a predetermined pattern on an exposed surface of an anode foil substrate such that a first portion of the exposed surface of the anode foil substrate is covered by the resist material, and a second portion of the exposed surface remains uncovered; polymerizing the resist material; exposing at least the second portion of the exposed surface to one or more etchants so as to form a plurality of tunnels; stripping the polymerized resist material; and widening at least a portion of the plurality of tunnels. The resist material may be deposited, for example, by ink-jet printing, stamping or screen printing.

Abstract: A method for balancing a rotor, notably of a turbomachine, includes a step of determining an unbalancing mass, and a step of balancing by chemical machining of the rotor. The chemical machining includes arranging a bath containing a chemical machining agent so that the bath has a capacity of heterogeneous material removal as a function of the depth in the bath, an amount of material removal at a first depth in the bath is greater than an amount of material removal at a second depth in the bath; immersing the rotor in the bath; and orienting the rotor in the bath taking account of the capacity of heterogeneous material removal so that the quantity of material removed from the rotor in a zone of the unbalancing mass is sufficient to balance the rotor.

Abstract: A layer of a metal selected from titanium, niobium, tungsten, molybdenum, ruthenium, rhodium, arsenic, aluminum and gallium, an oxide of the metal, a nitride of the metal, silicon nitride, hafnium nitride, tantalum nitride, or an alloy of these metals, the layer being provided on an underlying base material selected from glass, silicon, copper and nickel, is selectively etched with an alkaline etching solution containing a predefined complexing agent.

Abstract: A method of forming at least one curved plate having first and second layers, the first layer being formed of a first material and the second layer being formed of a second material, the method including forming one or more blocks of a fusible material on a surface of a substrate; baking the one or more blocks to deform their shape; and depositing the first and second materials over the one or more deformed blocks to form the first and second layers.

Abstract: A method is described for etching ceramic phosphor converters. The method includes contacting a surface of the converter with a solution of phosphor acid for a time sufficient to etch the converter. The method is applicable to ceramic phosphor converters comprising a phosphor having a general formula MxAlyOz:RE wherein M is a metal and RE is a rare earth element.

Abstract: A method for manufacturing a symbol on an exterior of an electronic device is provided. The method includes preparing a support layer, preparing a nanograting layer on the support layer, the nanograting layer including a first nanograting area corresponding to a preset symbol and a second nanograting area corresponding to an area other than the preset symbol, wherein each of the first nanograting area and the second nanograting area includes three-dimensional (3D) nanostructures and a pitch between the 3D nanostructures arranged in the first nanograting area is different from a pitch between the 3D nanostructures arranged in the second nanograting area.

Abstract: Apparatuses and methods are provided where porous metal is deposited on a substrate, a mask is provided on the porous metal and then an etching is performed.

Abstract: Aspects of the invention are directed to a method of forming graphene structures. Initially, a cluster of particles is received. The cluster of particles comprises a plurality of particles with each particle in the plurality of particles contacting one or more other particles in the plurality of particles. Subsequently, one or more layers are deposited on the cluster of particles with the one or more layers comprising graphene. The plurality of particles are then etched away without substantially etching the deposited one or more layers. Lastly, the remaining one or more layers are dried. The resultant graphene structures are particularly resistant to the negative effects of aggregation and compaction.

Abstract: A food grater having a cutting with a proximal end and a distal end and a midline has a plurality of teeth thrilled on the cutting surface. The plurality of teeth each have a cutting edge and form a plurality of rows of teeth positioned between the proximal end and the distal end of the cutting surface. The cutting edges of the teeth and the rows of teeth are configured to urge a food item towards the midline of the cutting surface when the food item is engaged with the cutting surface and moved in contact with the cutting surface in a cutting direction from the proximal end to the distal end of the cutting surface.

Abstract: A method for forming pattern on substrate comprises steps of: providing a metal substrate; amorphousizing the metal substrate to from an amorphous pattern layer in the metal substrate; etching the metal substrate and forming an etching portion in the surface of the metal substrate which is not covered with the amorphous pattern layer. The article manufactured by the method is also provided.

Abstract: The present disclosure provides a patterning process for an oxide film, including: covering a barrier layer composition on a substrate to form a patterned barrier layer, wherein the barrier layer composition includes an inorganic component and an organic binder with a weight ratio of 50-98:2-50; forming an oxide film on the patterned barrier layer and the substrate, wherein a thickness ratio (D1/D2) of the barrier layer (D1) to the oxide film (D2) is about 5-2000; and lifting off the barrier layer and the oxide film thereon, while leaving portions of the oxide film on the substrate.

Abstract: Disclosed herein is a method of manufacturing a noise removing filter, including preparing at least one conductive pattern, an insulating layer for covering the at least one conductive pattern, and a lower magnetic body including input/output stud terminals for electrically inputting and outputting electricity to and from the at least one conductive pattern; disposing a recognizable portion on upper surfaces of the input/output stud terminals; disposing an upper magnetic body on the recognizable portion and the insulating layer; polishing the upper magnetic body; and removing the recognizable portion such that a level of an upper surface of the upper magnetic body is higher than levels of the upper surfaces of the input/output stud terminals.

Abstract: Disclosed are an etchant which is used for redistribution of a semiconductor substrate having an electrode and which is capable of selectively etching copper without etching nickel; and a method for manufacturing a semiconductor device using the same. Specifically disclosed are an etchant which is used for redistribution of a semiconductor substrate and which contains hydrogen peroxide and citric acid and has a content of hydrogen peroxide of from 0.75 to 12% by mass and a content of citric acid of from 1 to 20% by mass, with a molar ratio of hydrogen peroxide and citric acid being in the range of from 0.3 to 5; an etchant for selective etching of copper which is used for redistribution of a semiconductor substrate and which contains hydrogen peroxide and malic acid and has a content of hydrogen peroxide of from 0.75 to 12% by mass and a content of malic acid of from 1.5 to 25% by mass, with a molar ratio of hydrogen peroxide and malic acid being in the range of from 0.

Abstract: A method for chemical mechanical polishing of a substrate comprising tungsten using a nonselective chemical mechanical polishing composition.

Abstract: A process of fabricating a heat dissipation substrate is provided. A metal substrate having an upper surface, a lower surface, first recesses located on the upper surface and second recesses located on the lower surface is provided. The metal substrate is divided into carrier units and connecting units connecting the carrier units. A first and a second insulating materials are respectively filled into the first and the recesses. A first conductive layer is formed on the upper surface and the first insulating material. A second conductive layer is formed on the lower surface and the second insulating material. The first and the second conductive layers are patterned to form a first and a second patterned conductive layers. The first and the second insulating materials are taken as an etching mask to etch the connecting units of the metal substrate so as to form a plurality of individual heat dissipation substrates.

Abstract: The present invention provides an etching solution for silver or silver alloy comprising one at least ammonium compound represented by the formula (1), (2) or (3) below and an oxidant:

Abstract: One aspect of the invention is a method of surface alloying stainless steel, In one embodiment, the method includes providing a stainless steel surface having an initial amount of iron and an initial amount of chromium; and preferentially removing iron from the stainless steel surface to obtain a surface having an amount of iron less than the initial amount of iron and an amount of chromium greater than the initial amount of chromium. Another aspect of the invention is a unitary stainless steel article.

Abstract: A method for surface treatment of a stainless steel separator for a fuel cell comprises preparing a stainless steel sheet containing nickel, chrome and iron, and having a passive film on a surface of the stainless steel sheet, and dipping the stainless steel sheet into a mixed etching solution of nitric acid (HNO3) and sulfuric acid (H2SO4) at a temperature of 50-70° C. for 30 seconds to 30 minutes to selectively lower an amount of Fe in the passive film formed on the surface of the stainless steel sheet.

Abstract: The invention addresses the problem of improving the adhesion between silver surfaces and resin materials, such as epoxy resins and mold materials, used in the production of electronic devices. The invention provides a method for improving the adhesion between a silver surface and a resin material comprising a step of electrolytically treating the silver surface with a solution containing a hydroxide selected from alkali metal hydroxides, alkaline earth metal hydroxides, ammonium hydroxides and mixtures thereof, wherein the silver surface is the cathode.

Abstract: Disclosed is a method for processing a substrate including a first process and a second process. The first process comprises supporting the substrate formed with a titanium-containing film on its front surface and rear surface by a support unit which is rotatably installed; rotating the substrate along with the support unit; and supplying a first processing liquid containing hydrofluoric acid to the rear surface of the substrate thereby processing the rear surface of the substrate with the first processing liquid. The second process comprises supplying a second processing liquid containing ammonia hydrogen peroxide mixture to the rear surface of the substrate after the first process is completed, thereby processing the rear surface of the substrate with the second processing liquid.

Abstract: Provided is an etching method including: (1) bringing a material containing at least one organic compound having an N—F bond into contact with the surface of a solid material; and (2) a step of heating the solid material; whereby etching can be performed safely and in a simple manner, at a higher etching rate, without the use of a high-environmental-load gas that causes global warming or highly reactive and toxic fluorine gas or hydrofluoric acid. The etching method may further include: (3) a step of exposing the solid material to light from the side of the material containing at least one organic compound having an N—F bond; and (4) a step of removing the material containing at least one organic compound having an N—F bond together with the residue remained between said material and the solid material.

Abstract: A write element for a thermally assisted magnetic head slider includes an air bearing surface facing to a magnetic recording medium; a first magnetic pole, a second magnetic pole, and coils sandwiched between the first and the second magnetic poles; a waveguide for guiding light generated by a light source module mounted on a substrate; and a plasmon unit provided around the first magnetic pole and the waveguide, which has a near-field light generating surface for propagating near-field light to the air bearing surface. The near-field light generating surface of the plasmon unit is apart from the air bearing surface with a first predetermined distance to form a first recess, and the first recess is filled in with a protective layer. The thermally assisted magnetic head slider can prevent the plasmon unit from protruding over the air bearing surface, thereby improving the performance of thermally assisted magnetic head.

Abstract: Selective etching techniques are used to manufacture a basic filtration element, which can then be used as a basis for constructing various devices for different applications. In this process, sheets of etchable material are etched from one or both sides of that sheet to form channels in a premasked pattern, which controls the minimum opening of the filtration element. The desired channel opening is only limited by the capability of the photochemical etching system being used. Alternatively, a filter element may be made by rolling or extruding a first sheet to form a plurality of recessed areas bordered by lands, selectively etching or punching through the recessed pattern areas, and bonding a second sheet having a plurality of etched or punched through areas to the first sheet, and, aligning the etched through areas to the second sheet with the recessed areas of the first sheet.

Abstract: Disclosed is a metal etching method, a metal etching control method and a control device thereof. The metal etching control method is employed in a metal wet etching machine and comprises steps below: performing etching to a metal film and acquiring an etching end time of the metal film; multiplying the etching end time with a constant ratio to acquire the over etching time of the metal film; and performing etching to the metal film with the over etching time to complete the etching to the metal film. The present invention can precisely judge a total real etching time needed for each of a batch of metal films as performing metal etching to the metal films to reduce the issue of unstable etching qualities as the metal film thicknesses are not regular.

Abstract: A combination, composition and associated method for chemical mechanical planarization of a tungsten-containing substrate are described herein which afford tunability of tungsten/dielectric selectivity and low selectivity for tungsten removal in relation to dielectric material. Removal rates for both tungsten and dielectric are high and stability of the slurry (e.g., with respect to pH drift over time) is high.

Abstract: A method of reducing defect heights of iron mound defects on a mill glass coated electrical steel, comprises contacting at least a portion of a surface of a mill glass coated electrical steel with an acidic solution for a contacting time sufficient to reduce an average height of iron defects on the surface to a an average height in a range of 0 percent to 150 percent of the thickness of the mill glass coating, without effectively removing the mill glass coating. After contacting, the acid contacted mill glass coated electrical steel is rinsed with water and dried.

Abstract: A method of forming a metal pattern on a display substrate includes blanket depositing a copper-based layer having a thickness between about 1,500 ? and about 5,500 ? on a base substrate, and forming a patterned photoresist layer on the copper-based layer. The copper-based layer is over-etched by an etching composition containing an oxidizing moderating agent where the over-etch factor is between about 40% and about 200% while using the patterned photoresist layer as an etch stopping layer, and where the etching composition includes ammonium persulfate between about 0.1% by weight and about 50% by weight, includes an azole-based compound between about 0.01% by weight and about 5% by weight and a remainder of water. Thus, reliability of the metal pattern and that of manufacturing a display substrate may be improved.

Abstract: A method of patterning a first material on a polymeric substrate is described. The method includes providing a polymeric film substrate having a major surface with a relief pattern including a recessed region and an adjacent raised region, depositing a first material onto the major surface of the polymeric film substrate to form a coated polymeric film substrate, forming a layer of a functionalizing material selectively on the raised region of the coated polymeric film substrate to form a functionalized raised region and an unfunctionalized recessed region, and etching the first material from the polymeric substrate selectively from the unfunctionalized recessed region.

Abstract: Disclosed are a liquid processing method, a liquid processing apparatus, and a recording medium that can prevent convex portions of a target substrate from collapsing when a rinsing liquid is dried. A base surface of a target substrate is hydrophilized and the surfaces of convex portions become water-repellent by surface-processing the target substrate which includes a main body, a plurality of convex portions protruding from the main body, and a base surface formed between the convex portions on the substrate main body. Next, a rinsing liquid is supplied to the target substrate which has been subjected to the surface processing. Thereafter, the rinsing liquid is removed from the target substrate.

Abstract: Provided is a nanowire manufacturing method, comprising forming a plurality of grid patterns on a substrate, forming a nanowire on the grid patterns, and separating the grid pattern and the nanowire. According to the present invention, the width and height of the nanowire can be adjusted by controlling the wet-etching process time period, and the nanowire can be manufactured at a room temperature at low cost, the nanowire can be mass-manufactured and the nanowire with regularity can be manufactured even in case of mass production.

Abstract: This disclosure relates to an etching composition containing about 60% to about 95% of at least one sulfonic acid; about 0.005% to about 0.04% of chloride anion; about 0.03% to about 0.27% of bromide anion; about 0.1% to about 20% of nitrate or nitrosyl ion; and about 3% to about 37% of water.

Abstract: In the composite, an aluminum-plated steel sheet and a resin are securely and integrally joined together. Through chemical etching, the aluminum-plated steel sheet is caused to have a surface configuration, in which three-dimensional protrusions having shapes with a minor diameter of at least 0.3 ?m and a major diameter of at least 3 ?m are scattered over a plain part and a portion covered with shallow fine recesses with a diameter of 20 to 50 nm in a state of being distributed adjacent to each other on the plain part accounts for 30 to 50% of the surface area of the plain part. The surface of the three-dimensional protrusions is mainly ceramic containing silicon and the plain part is mainly ceramic containing aluminum. The resin is joined through injection molding with the aluminum-plated steel sheet having been inserted into a metallic mold.

Abstract: A process for cleaning a compound semiconductor wafer; the compound semiconductor wafer comprises, taking gallium arsenide (GaAs) as a representative, a group III-V compound semiconductor wafer. The process comprises the following steps: 1) treating the wafer with a mixture of dilute ammonia, hydrogen peroxide and water at a temperature not higher than 20° C.; 2) washing the wafer with deionized water; 3) treating the wafer with an oxidant; 4) washing the wafer with deionized water; 5) treating the wafer with a dilute acid solution or a dilute alkali solution; 6) washing the wafer with deionized water; and 7) drying the resulting wafer. The process can improve the cleanliness, micro-roughness and uniformity of the wafer surface.

Abstract: A known method of forming organic semiconductor devices employs the deposition of a conductive polymer onto a substrate to form electrodes or conductive tracks and then to apply an electrical material such as an organic semiconductor on top of these tracks. Although the conductive polymer serves as a highly efficient injector of electrons into the semiconductor, it is not a good conductor. This introduces undesirable inefficient in the supply of current to and from the semiconductor. Worse still the conductivity may deteriorate with time. A solution to this problem has been found by printing the polymer (7) onto a conductive layer (6) carried on a substrate (5). The printed polymer (7) is then used as a resist during a process in which parts of the conductive polymer not protected by the polymer are removed. The resulting device benefits from the good electron injection qualities of the conductive polymer (7) and efficient conduction by virtue of the underlying conductive layer (6).

Abstract: A nozzle plate containing multiple micro-orifices for the cascade impactor and a method for manufacturing the same are disclosed. The nozzle plate is formed by a series of semiconductor processes, including lithography, etching and electroplating. The nozzle plate comprises a plate body and a plurality of micro-orifices formed on the plate body. The orifice has a diameter which gradually expands in the direction away from the bottom of the plate body to achieve a smooth inner surface, allowing particles to pass therethrough smoothly without being clogged in the nozzle plate.

Abstract: High quantum yield InP nanocrystals are used in the bio-technology, bio-medical, and photovoltaic, specifically IV, III-V and III-VI nanocrystal technological applications. InP nanocrystals typically require post-generation HF treatment. Combining microwave methodologies with the presence of a fluorinated ionic liquid allows Fluorine ion etching without the hazards accompanying HF. Growing the InP nanocrystals in the presence of the ionic liquid allows in-situ etching to be achieved. The optimization of the PL QY is achieved by balancing growth and etching rates in the reaction.

Abstract: A method for manufacturing a touch panel includes the following steps. A mother plate is provided. A plurality of adhesive materials are formed on the mother plate. A plurality of cover glasses are disposed on the adhesive materials respectively. The adhesive materials are cured, whereby the cover glasses are attached to the mother plate. A plurality of circuit units are formed on the cover glasses respectively. The cover glass having the circuit unit is removed from the mother plate, wherein the bonding strength of the cured adhesive material is within a range about between 5 g/25 mm and 600 g/25 mm, whereby the adhesive material provides enough adhesive force between the cover glass and the mother plate, and the adhesive material cannot be stayed on a surface of the cover glass during a removing process.

Abstract: A method of forming a patterned substrate is provided. The method includes providing a substrate (300) having a structured surface region comprising one or more recessed features (310). The method includes disposing a first liquid (325) onto at least a portion of the structured surface region. The method includes contacting the first liquid with a second liquid (330). The method includes displacing the first liquid with the second liquid from at least a portion (315) of the structured surface region. The first liquid is selectively located in at least a portion of the one or more recessed features.

Abstract: The present invention relates to a method and an arrangement for restoring strength and wear resistant of a metallic matrix ceramic (1) comprising a metallic binder (2) and ceramic filler (3) particles, which metallic matrix ceramic (1) has been exposed for long term high temperature and pressure cycling, for example in a gas exhaust nozzle (6), whereby micro cracks (4) are developed in the outer layer (5) of the metallic binder (2) According to the invention this is achieved by virtue of the fact that the outer layer (5) of the metallic binder (2), partly or fully, is removed from the MMC part (1) by a chemical operation, where after the outer layer (5) is compressed by a compression operation for achieving a dense outer layer (5), in which filler (3) particles are close to each other.

Abstract: A method includes applying a final etch-resistant material to an in-process substrate so that the final etch-resistant material at least partially covers first microcontact portions integral with the substrate and projecting upwardly from a surface of the substrate, and etching the surface of the substrate so as to leave second microcontact portions below the first microcontact portions and integral therewith, the final etch-resistant material at least partially protecting the first microcontact portions from etching during the further etching step. A microelectronic unit includes a substrate, and a plurality of microcontacts projecting in a vertical direction from the substrate, each microcontact including a base region adjacent the substrate and a tip region remote from the substrate, each microcontact having a horizontal dimension which is a first function of vertical location in the base region and which is a second function of vertical location in the tip region.

Abstract: The invention relates to a method for modification of a biocompatible component comprising the steps of a) providing a biocompatible component at least partly covered by metallic oxide; and b) treating at least a part of said component, which part is covered by said metallic oxide, with an aqueous composition comprising oxalic acid; whereby a modified metallic oxide is obtained. The invention also relates to a biocompatible component comprising a substrate having a surface comprising a) a microstructure comprising pits separated by plateus and/or ridges; and b) a primary nanostructure being superimposed on said microstructure, said primary nanostructure comprising depressions arranged in a wave-like formation.

Abstract: Provided in one embodiment is a method of forming a movable joint or connection between parts that move with respect to one another, wherein at least one part is at least partially enclosed by at least one second part. The method includes positioning an etchable material over an at least one first part, molding or forming an at least one second part over at least the etchable material, and removing the etchable material.