Abstract: A charged-particle-beam device is characterized in having a control value for an aligner coil (29) being determined by: a coil current and an electrode applied-voltage at a control value for objectives (30, 31), which is an electromagnetic-field superposition lens; a control value for image-shift coils (27, 28); and the acceleration voltage of the charged-particle-beam. By doing this, it has become possible to avoid image disturbances that occur on images to be displayed at boundaries between charged areas and non-charged areas, and provide a charged-particle-beam device that obtains clear images without any unevenness in brightness.

Abstract: The invention provides multiple detectors that detect electrons that have passed through a sample. The detectors preferably detect electrons after the electrons have been passed through a prism that separates electrons according to their energies. Electrons in different energy ranges are then detected by different detectors, with preferably at least one of the detectors measuring the energy lost by the electrons as they pass through the sample. One embodiment of the invention provides EELS on core-loss electrons while simultaneously providing a bright-field STEM signal from low-loss electrons.

Abstract: (1) part or all of the number, coordinates and size/shape and imaging sequence of imaging points each for observation, the imaging position change method and imaging conditions can be calculated automatically from CAD data, (2) a combination of input information and output information for imaging recipe creation can be set arbitrarily, and (3) decision is made of imaging or processing at an arbitrary imaging point as to whether to be successful/unsuccessful and in case a failure is determined, a relief process can be conducted in which the imaging point or imaging sequence is changed.

Abstract: A novel specimen holder for specimen support devices for insertion in electron microscopes. The novel specimen holder of the invention provides mechanical support for specimen support devices and as well as electrical contacts to the specimens or specimen support devices.

Abstract: A conventional pattern inspection, which compares an image to be inspected with a reference image and subjects the resulting difference value to the defect detection using the threshold of defect determination, has difficulty in highly-sensitive inspection. Because defects occur only in specific circuit pattern sections, false reports occur in the conventional pattern inspections which are not based on the position. Disclosed are a defect inspection method and a device thereof which perform a pattern inspection by acquiring a GP image in advance, designating a place to be inspected and a threshold map to the GP image on the GUI, setting the identification reference of the defects, next acquiring the image to be inspected, applying the identification reference to the image to be inspected, and identifying the defects with the identification reference, thereby enabling the highly-sensitive inspection.

Abstract: A focused ion beam apparatus including: a focused ion beam irradiation mechanism forming first and second cross-sections; a first image generation unit generating a first image, including a reflected electron image or a secondary electron image, of the first and second cross-sections; a second image generation unit generating a second image, including an EDS image or a secondary ion image, of the first and second cross-sections; and a control section causing the second image generation unit to generate the second image of the second cross-section, in a case where the first and second images of the first cross-section are acquired, the first image of the second cross-section is acquired, and the first image of the second cross-section includes a region different from a region representing a specific composition in the first image of the first cross-section.

Abstract: A surface charge measuring distribution method includes the steps of irradiating a sample with a charged particle beam and charging a sample surface in a spot-like manner, irradiating the charged sample with the charged particle beam to measure a potential at a potential saddle point formed above the sample, selecting one of preset multiple structure models and a tentative space charge distribution associated with the selected structure model, calculating a space potential at the potential saddle point by electromagnetic field analysis using the selected structure model and tentative space charge distribution, comparing the calculated space potential and measured value to determine the tentative space charge distribution as a space charge distribution of the sample when an error between the space potential and the measured value is within a predetermined range, and calculating a surface charge distribution of the sample by electromagnetic field analysis based on the determined space charge distribution.

Abstract: A method for axial alignment of a charged particle beam relative to at least three stages of multipole elements and a charged particle beam system capable of making the axial alignment. Some parts of the orbit of the beam or the distributions of three astigmatic fields, or both, are simultaneously translated in a direction perpendicular to the optical axis such that astigmatisms of the same order and same type due to axial deviations between successive ones of the astigmatic fields cancel.

Abstract: A focused ion beam system includes a gas field ion source which generates gas ions, an ion gun unit which accelerates the gas ions and radiates the gas ions as an ion beam, a beam optical system which includes at least a focusing lens electrode and radiates the ion beam onto a sample, and an image acquiring mechanism which acquires an FIM image of a tip of an emitter based on the ion beam. The image acquiring mechanism includes an alignment electrode which is disposed between the ion gun unit and the focusing lens electrode and adjusts a radiation direction of the ion beam, an alignment control unit which applies an alignment voltage to the alignment electrode, and an image processing unit which combines a plurality of FIM images acquired when applying different alignment voltages to generate one composite FIM image.

Abstract: In accordance with an embodiment, a sample structure analyzing method includes generating a beam and then applying the beam to a plurality of observation regions on a sample, and acquiring a plurality of diffraction images from the beam which has passed through the sample; and comparing the acquired diffraction images, and judging the difference between the observation regions from the comparison result, or identifying the grain boundary of crystal constituting the sample.

Abstract: A broadband light illuminator of an optical inspector for optically detecting defects of an inspection object may include an electrode-less chamber including a plasma area from which broadband light is generated; a first energy provider, exterior to the chamber, configured to provide first energy for ionizing high pressure gases to form ionized gases in the chamber; a second energy provider, exterior to the chamber, configured to provide second energy for transforming the ionized gases into a plasma state to form the plasma area at a central portion of the chamber; an elliptical reflector having a first focus at which the chamber is positioned and a second focus such that the broadband light is reflected from the elliptical reflector toward the second focus; and a lens unit focusing the reflected broadband light onto the inspection object to form an inspection light for detecting the defects of the inspection object.

Abstract: An apparatus for demodulating an input signal that includes a frequency detector for tracking a frequency of the input signal, an oscillator and a mixer is disclosed. The input signal and an output signal of the oscillator can constitute the incoming signals for the mixer and the output signal of the mixer can constitute the demodulated input signal, wherein an arithmetic unit is arranged downstream of the frequency detector and upstream of the oscillator, wherein the tracked frequency of the input signal and a predefined second frequency constitute the incoming signals of the arithmetic unit and the arithmetic unit is designed such that it computes a control signal for the oscillator from the tracked frequency of the input signal and the predefined second frequency with the output signal of the oscillator depending on the control signal.

Abstract: This charged particle beam microscope is characterized by being provided with selection means (153, 155) for a measurement processing method for detected particles (118) and by this means selecting a different measurement processing method for a scanning region with a large number of secondary electrons (115) emitted from a sample (114) and for a region with a small number of secondary electrons. Thus, in sample scanning using a charged particle beam microscope, an image in which the contrast of bottom holes and channel bottoms with few emitted secondary electrons is emphasized and images that emphasize shadow contrast can be acquired in a short period of time.

Abstract: The present invention has the object of providing charged particle beam irradiation method ideal for reducing the focus offset, magnification fluctuation and measurement length error in charged particle beam devices. To achieve these objects, a method is disclosed in the invention for measuring the electrical potential distribution on the sample with a static electrometer while loaded by a loader mechanism. Another method is disclosed for measuring the local electrical charge at specified points on the sample, and isolating and measuring the wide area electrostatic charge quantity from those local electrostatic charges.

Abstract: The invention relates to a method of forming an image of a sample in a transmission electron microscope equipped with a phase plate. Prior art use of such a phase plate can introduce artifacts in the form of ringing and a halo. These artifacts are caused by the abrupt changes in the Fourier domain due to the sharp edges of the phase plate in the diffraction plane. By moving the phase plate with respect to the non-diffraction beam (the diffraction pattern) while recording an image the sudden transition in the Fourier domain is changed to a more gradual transition, resulting in less artifacts.

Abstract: A method of processing a TEM-sample, wherein the method comprises: mounting an object in a particle beam system such that the object is disposed, in an object region of the particle beam system; directing of a first particle beam onto the object region from a first direction, wherein the first particle beam is an ion beam; and then rotating the object about an axis by 180°, wherein the following relation is fulfilled: 35°???55°, wherein ? denotes a first angle between the first direction and the axis; and then directing of the first particle beam onto the object region from the first direction; wherein material is removed from the object during the directing of the first particle beam onto the object region. Furthermore, a second particle beam may be directed onto the object region, and particles emanating from the object region can be detected.

Abstract: A device includes: an electrode; a displacement measurement unit outputting voltage corresponding to electrostatic force between the electrode and a sample; a first power supply applying a first voltage between the electrode and sample; a second power supply adding, to the first voltage, a second voltage having a different frequency than the first voltage, and applying the added voltage; and a signal detection unit outputting a particular frequency component's magnitude contained in the displacement measurement unit's output, in which the signal detection unit extracts, from the output by the displacement measurement unit, and outputs, to a potential calculation unit, magnitude and phase of a frequency component of a frequency identical to the frequency of the first voltage, and magnitude of a frequency component of a frequency identical to a frequency equivalent to a difference between the frequencies of the first and second voltages, to measure the sample's surface potential.

Abstract: The invention relates to a charged-particle apparatus having a charged particle source with an optical axis; a magnetic immersion lens comprising a first lens pole and a configurable magnetic circuit; and a first sample stage movable with respect to the optical axis. The apparatus has a first configuration to position the sample, mounted on the first stage, with respect to the optical axis and a second configuration, having a second lens pole mounted on the first stage and intersecting the optical axis, equipped with a second sample stage to position the sample between the two lens poles and is movable with respect to the optical axis, causing the optical properties of the magnetic immersion lens to differ in the two configurations, and can, in the second configuration, be changed by positioning the second lens pole using the first stage, thus changing the magnetic circuit.

Abstract: A method and apparatus is provided for preparing samples for observation in a charged particle beam system in a manner that reduces or prevents artifacts. Material is deposited onto the sample using charged particle beam deposition just before or during the final milling, which results in an artifact-free surface. Embodiments are useful for preparing cross sections for SEM observation of samples having layers of materials of different hardnesses. Embodiments are useful for preparation of thin TEM samples.

Abstract: A method of and apparatus for controlling the temperature of an inductively coupled or microwave induced plasma for optical emission spectrometry or mass spectrometry in which the intensities of two spectral lines of radiation emitted by the plasma are measured, and the power provided to sustain the plasma is adjusted so that the ratio of the intensities remains substantially constant.

Abstract: In recent years, in association with the miniaturization and high integration of semiconductor manufacturing processes, there have been arising many cases where observation target portions are densely located. In such a case, if observation is performed using a conventional pre-charge technology, scanning with an electron beam in pre-charging are repeatedly executed, therefore the charge potential on the surface of a specimen exceeds the dielectric breakdown voltage. As a result, dielectric breakdown arises in areas where scanning with an electron beam are repeatedly executed. An object of the present invention is to provide a defect observation method that can reduce the risk of dielectric breakdown, and a charged particle beam apparatus that utilizes the method. In the present invention, when a specimen is observed with the use of a technology relevant to pre-charging, after executing a piece of control processing, plural images are photographed.

Abstract: An amount of pattern position displacement between observation images acquired by irradiating from two different directions is changed depending on beam deflection for moving an image acquisition position. In a pattern evaluation method that measures astigmatic difference or focus position displacement having a small amount of dose at a high speed using parallax caused by the tilted beam, a correction value obtained in advance by measurement is reflected in an amount of pattern position displacement between observation images obtained by irradiating from at least two different directions and generated in accordance with the amount of beam deflection for moving an image acquisition position. A processing unit calculates an amount of correction of an amount of pattern position displacement depending on beam deflection of a beam deflecting unit for moving an image acquisition position on the sample at a high speed.

Abstract: The apparatus includes a probe tip configured to scan a substrate having a defect to attach the defect on the probe tip while scanning the substrate, a cantilever configured to integrate a holder holding at least one probe tip, a stage configured to secure the substrate, an electromagnetic radiation source configured to generate the electromagnetic radiation beam, and an electromagnetic radiation detector configured to receive the first electromagnetic radiation signal and the second electromagnetic radiation signal. A first electromagnetic radiation signal is generated while an electromagnetic radiation beam focuses on the probe tip. A second electromagnetic radiation signal is generated while the electromagnetic radiation beam focuses on the sample attached on the probe tip. A chemical analysis of the sample is executed by comparing a difference between the first electromagnetic radiation signal and the second electromagnetic radiation signal.

Abstract: An electron beam writing apparatus comprising a XY stage that a sample is placed on, an electron optical column, an electron gun emitting an electron beam disposed in the optical column, an electrostatic lens provided with electrodes aligned in an axial direction of the electron beam disposed in the optical column, wherein a shield plate is disposed between the XY stage and the electron optical column to block reflected electrons or secondary electrons generated by irradiation to the sample with the electron beam. The electrostatic lens is disposed immediately above the shield plate to change a focal position of the electron beam. A voltage supply device applies a negative voltage constantly to the electrostatic lens.

Abstract: A method of processing of an object comprises scanning a particle beam across a surface of the object and detecting electrons emerging from the object due to the scanning; determining a height difference between the surface of the object and a predetermined surface for each of plural of locations on the surface of the object based on the detected electrons; determining a processing intensity for each of the plural locations on the surface of the object based on the determined height differences; and directing a particle beam to the plural locations based on the determined processing intensities, in order to remove material from or deposit material on the object at the plural locations.

Abstract: A method is provided for imaging a region of interest. The method includes defining a lamella within a microelectronic device, where the region of interest is in the lamella. The lamella has a first and second surface, and a first sacrificial layer contacts the first surface. The region of interest includes a material of interest, and an imaging technique capable of detecting the material of interest is selected. A support layer is formed on the second surface, where the support layer is transparent to the imaging technique. The first sacrificial layer is removed, and an image of the region of interest is produced.

Abstract: A scanning electron microscope includes a main scanning electron microscope unit having an electron optical column and a sample chamber, a controller over the main scanning electron microscope unit, a single housing that houses both the main scanning electron microscope unit and the controller, and a bottom plate disposed under the single housing, the main scanning electron microscope unit and the controller. A first leg member is attached to a bottom face of the bottom plate on a side of the controller with a first opening hole provided through the bottom plate on a side of the main scanning electron microscope unit, and a damper is fixed to a bottom face of the main scanning electron microscope unit and disposed through the first opening hole.

Abstract: A method of imaging of a specimen exposed to an electron beam signal includes acquiring an image sequence of sequential images of the specimen. Each subsequent image in the image sequence represents increased cumulative electron beam signal exposure on the specimen. The method includes collecting cumulative exposure data for each image of the image sequence. The method includes applying a low-pass image processing filter to the images of the image sequence using the cumulative exposure data corresponding to each image to which the filter is being applied to produce processed images. The method includes combining the processed images to produce a final image. A method of imaging is also provided that includes selectively discarding images in the image sequence.

Abstract: A pattern inspection apparatus configured to perform pattern inspection based on a SEM image previously measures distortion amount data representing a magnitude distribution of positional displacement caused by distortion of the SEM image in a scanning direction. When the pattern inspection is performed, the apparatus makes design data and the SEM image correspond to each other by adjusting at least one of the design data and the SEM image on the basis of the distortion amount data, and places a measurement region on the SEM image on the basis of a correspondence between the design data and the SEM image. The apparatus may further find a matching rate between a pattern of the design data and a pattern of the SEM image.

Abstract: A method for heating a substrate in a vacuum environment and a system therefor is provided. The system includes a chamber capable of holding the substrate located in the vacuum environment and a light source capable of projecting a light beam only on a portion of the substrate. The method includes the following steps. First, the substrate is placed in the vacuumed chamber. Thereafter, the light beam emitted from the light source is projected on the portion of the substrate, such that the portion is significantly heated before whole the substrate is heated. When the light beam is a charged particle beam projected by a charged particle beam assembly and projected on defects located on the substrate, the defects are capable of being identified by an examination result provided by an examination assembly after termination of light beam projection.

Abstract: An inspection apparatus by an electron beam comprises: an electron-optical device 70 having an electron-optical system for irradiating the object with a primary electron beam from an electron beam source, and a detector for detecting the secondary electron image projected by the electron-optical system; a stage system 50 for holding and moving the object relative to the electron-optical system; a mini-environment chamber 20 for supplying a clean gas to the object to prevent dust from contacting to the object; a working chamber 31 for accommodating the stage device, the working chamber being controllable so as to have a vacuum atmosphere; at least two loading chambers 41, 42 disposed between the mini-environment chamber and the working chamber, adapted to be independently controllable so as to have a vacuum atmosphere; and a loader 60 for transferring the object to the stage system through the loading chambers.

Abstract: A retarding field analyzer uses the existing components of a charged particle beam system eliminating the need for inserting a separate retarding field analyzer device. Using components of the existing column reduces the time required to analyze the beam. Using the imaging capabilities of the existing column facilitates alignment of the beam with the analyzer.

Abstract: An inspecting apparatus for reducing a time loss associated with a work for changing a detector is characterized by comprising a plurality of detectors 11, 12for receiving an electron beam emitted from a sample W to capture image data representative of the sample W, and a switching mechanism M for causing the electron beam to be incident on one of the plurality of detectors 11, 12, where the plurality of detectors 11, 12 are disposed in the same chamber MC. The plurality of detectors 11, 12 can be an arbitrary combination of a detector comprising an electron sensor for converting an electron beam into an electric signal with a detector comprising an optical sensor for converting an electron beam into light and converting the light into an electric signal. The switching mechanism M may be a mechanical moving mechanism or an electron beam deflector.

Abstract: A method of depositing material onto a substrate at cryogenic temperatures using beam-induced deposition. A precursor gas is chosen from a group of compounds having a melting point that is lower than the cryogenic temperature of the substrate. Preferably the precursor gas is chosen from a group of compounds having a sticking coefficient that is between 0.5 and 0.8 at the desired cryogenic temperature. This will result in the precursor gas reaching equilibrium between precursor molecules adsorbed onto the substrate surface and precursor gas molecules desorbing from the substrate surface at the desired cryogenic temperature. Suitable precursor gases can comprise alkanes, alkenes, or alkynes. At a cryogenic temperature of between ?50° C. and ?85° C., hexane can be used as a precursor gas to deposit material; at a cryogenic temperature of between ?50° C. and ?180° C., propane can be used as a precursor gas.

Abstract: Provided is a charged particle beam device that outputs both an ion beam and an electron beam at a sample, has a common detector for both the ion beam and the electron beam in the charged particle beam device that processes and observes the sample, and is able to provide a detection unit to an appropriate position corresponding to the process details and observation technique of the sample.

Abstract: The present invention generally relates to dynamic focus adjustment for an image system. With the assistance of a height detection sub-system, present invention provides an apparatus and methods for micro adjusting an image focusing according the specimen surface height variation by altering the field strength of an electrostatic lens between objective lens and sample stage/or a bias voltage applied to the sample surface. Merely by way of example, the invention has been applied to a scanning electron inspection system. But it would be recognized that the invention could apply to other system using charged particle beam as observation tool with a height detection apparatus.

Abstract: A sample processing apparatus (102) includes a reference carrier region (106) that supports a reference carrier (108), which includes one or more reference substances that emit radiation with unique and known spectral characteristics in response to being irradiated with radiation having a wavelength in a predetermined range of interest. The sample processing apparatus further includes a carrier receiving region (110) configured to alternatively receive a sample carrier (104) or the reference carrier for processing by the apparatus. The sample processing apparatus further includes an optical component (114, 116, 118) that emits radiation, having a wavelength in a predetermined range of interest, that irradiates the carrier in the carrier receiving region, and that detects the radiation emitted from the carrier. The apparatus moves the reference carrier from the reference carrier region to the carrier receiving region for processing by the apparatus.

Abstract: Methods and systems for tracing circuitry on integrated circuits using focused ion beam based imaging techniques. A first component or node on an integrated circuit is coupled to a second component or node on the same integrated circuit. After an external bias is applied to the first component or node, a focused ion beam is applied to the integrated circuit and an image is taken using an electron detector. The features or components on the integrated circuit which are coupled to the second component or node will show up in high contrast on the resulting image. The method may also involve applying a bias to a node or component and then using focused ion beam imaging techniques (through an electron detector) to arrive at an image of the integrated circuit. Components coupled to the node will appear in high contrast in the resulting image.

Abstract: The present invention provides an on-chip thin film phase plate for a releasing charging, comprising a chip substrate having one or more apertures; and a thin film layer attached to the top surface of the chip substrate. The present invention also provides a method for observing organic material by TEM, which uses the above-mentioned on-chip thin film phase plate in a TEM system.

Abstract: An aberration correction device includes, between a TEM objective lens and an STEM objective lens, a transfer lens group for transferring a coma-free surface of the TEM objective lens to a multipolar lens, a transfer lens group for transferring the coma-free surface of the TEM objective lens to a multipolar lens, and a transfer lens for correcting fifth-order spherical aberration of the STEM objective lens.

Abstract: A lower pole piece of an electromagnetic superposition type objective lens is divided into an upper magnetic path and a lower magnetic path. A voltage nearly equal to a retarding voltage is applied to the lower magnetic path. An objective lens capable of acquiring an image with a higher resolution and a higher contrast than a conventional image is provided. An electromagnetic superposition type objective lens includes a magnetic path that encloses a coil, a cylindrical or conical booster magnetic path that surrounds an electron beam, a control magnetic path that is interposed between the coil and sample, an accelerating electric field control unit that accelerates the electron beam using a booster power supply, a decelerating electric field control unit that decelerates the electron beam using a stage power supply, and a suppression unit that suppresses electric discharge of the sample using a control magnetic path power supply.

Abstract: In an interference electron microscope, a first electron biprism is disposed between an acceleration tube and an illumination-lens system, a mask is disposed between the acceleration tube and the first electron biprism, and the first electron biprism is arranged in a shadow that the mask forms. Current densities of first and second electron beams on a parabolic surface of an objective lens system where a sample is positioned are controlled by a control system by an optical action of the illumination-lens system, the mask is imaged on the parabolic surface of the objective lens system, and an electro-optical length between the first electron biprism and the parabolic surface of the objective lens where the sample is positioned is controlled without generating Fresnel fringes on a sample surface from the mask and the first electron biprism.

Abstract: A focused ion beam device is described comprising a gas field ion source with an analyzer for analyzing and classifying the structure of a specimen, a controller for controlling and/or modifying the structure of the specimen according to the analysis of the analyzer, an emitter tip, the emitter tip has a base tip comprising a first material and a supertip comprising a material different from the first material, wherein the supertip is a single atom tip and the base tip is a single crystal base tip. Furthermore, the focused ion beam device has a probe current control and a sample charge control. A method of operating a focused ion beam device is provided comprising applying a voltage between a single emission center of the supertip and an electrode, supplying gas to the emitter tip, analyzing and classifying the structure of a specimen, and controlling the structure of the specimen.

Abstract: The chromatic aberration corrector (100) has a first multipole element (110) for producing a first electromagnetic field and a second multipole element (120) for producing a second electromagnetic field. The first multipole element (110) first, second, and third portions (110a, 110b, 110c) arranged along an optical axis (OA) having a thickness and producing a quadrupole field in which an electric quadrupole field and a magnetic quadrupole field are superimposed. In the first and third portions (110a, 110c), the electric quadrupole field is set stronger than the magnetic quadrupole field. In the second portion (110b), the magnetic quadrupole field is set stronger than the electric quadrupole field. The second portion (110b) produces a two-fold astigmatism component that is opposite in sign to two-fold astigmatism components produced by the first portion (110a) and third portion (110c).

Abstract: Provided is means which enables observation of the shape of a specimen as it is without deforming the specimen. Observation is made by allowing a specimen-holding member having an opening (for example, microgrid and mesh) to hold an ionic liquid and charging a specimen thereto, to allow the specimen to suspend in the ionic liquid. Furthermore, in the proximity of the specimen-holding member, a mechanism of injecting an ionic liquid (ionic liquid introduction mechanism) and/or an electrode are provided. When a voltage is applied to the electrode, the specimen moves or deforms in the ionic liquid. How the specimen moves or deforms can be observed. Furthermore, in the proximity of specimen-holding member, an evaporation apparatus is provided to enable charge of the specimen into the ionic liquid while evaporating. Furthermore, in the proximity of the specimen-holding member, a microcapillary is provided to charge a liquid-state specimen into the ionic liquid.

Abstract: Metrology is performed using multiple registered images derived from one or more charged particle beams. Measurements combine features from one image that may not be visible in a second image to determine relationships that cannot be determined from a single image. In one embodiment, measurements use features from different element maps to determine a relationship between features, such as a distance or angle between two features in the first image at a location determined by a distance from a feature on the second image.

Abstract: This invention relates to the reduction of charged particle loss by radially introducing sheath air from the porous wall. The corona-wire unipolar aerosol charger of the present invention includes a charging chamber, at least one aerosol inlet channel, a corona wire, an annular sheath air inlet opening, a porous tube defining a charging chamber, an annular sheath air outlet opening, and an aerosol outlet channel. The sheath air inlet opening is for radially introducing a sheath air flow into the charging chamber. The charged particles will not deposit on the wall surface of the charger if the radial velocity of the introduced sheath air at the wall is higher or comparable to the electrostatic velocity of charged particles. The dilution effect of charged particle due to the use of clean air can be further minimized by redirecting the excess clean air to the outside of the charger.

Abstract: Provided is a charged particle beam device that prevents the increase in processing trouble caused by deterioration in the reviewing performance (e.g., overlooking of defects) by detecting an operation abnormality affecting the performance of the device or a possibility of such an abnormality in the middle of a processing sequence of a sample and giving a feedback in real time. In each processing step of the charged particle beam device, monitoring items representing the operating status of the device (control status of the electron beam, an offset amount at the time of wafer positioning, a defect coordinate error offset amount, etc.) are monitored during the processing sequence of a sample and stored as history information. In the middle of the processing sequence, a comparative judgment between the value of each monitoring item and the past history information corresponding to the monitoring item is made according to preset judgment criteria.

Abstract: An interface, a scanning electron microscope and a method for observing an object that is positioned in a non-vacuum environment. The method includes: passing at least one electron beam that is generated in a vacuum environment through at least one aperture out of an aperture array and through at least one ultra thin membrane that seals the at least one aperture; wherein the at least one electron beam is directed towards the object; wherein the at least one ultra thin membrane withstands a pressure difference between the vacuum environment and the non-vacuum environment; and detecting particles generated in response to an interaction between the at least one electron beam and the object.

Abstract: The invention relates to an electron beam exposure apparatus for transferring a pattern onto the surface of a target, comprising: a beamlet generator for generating a plurality of electron beamlets; a modulation array for receiving said plurality of electron beamlets, comprising a plurality of modulators for modulating the intensity of an electron beamlet; a controller, connected to the modulation array for individually controlling the modulators, an adjustor, operationally connected to each modulator, for individually adjusting the control signal of each modulator; a focusing electron optical system comprising an array of electrostatic lenses wherein each lens focuses a corresponding individual beamlet, which is transmitted by said modulation array, to a cross section smaller than 300 nm, and a target holder for holding a target with its exposure surface onto which the pattern is to be transferred in the first focal plane of the focusing electron optical system.