Abstract: Embodiments are directed to an information processing system for generating a corrected image of a sample. The system includes a detector, a memory communicatively coupled to the detector, and a post-detection image processor communicatively coupled to the memory and the detector. The detector is configured to detect data of a plurality of moving particles, wherein the data of the plurality of moving particles correspond to an uncorrected image of the sample, and wherein the uncorrected image includes defocus, astigmatism and spherical aberration. The post-detection image processor is configured to generate a corrected image of the sample based at least in part on processing the detected data of the plurality of moving particles.

Abstract: A multi-beam particle microscope includes first particle optics in order to direct particle beams onto an object, a detector with detection regions, with a transducer being assigned to each detection region, and a data acquisition system, which has a control computer system, image recording computer systems and a screen. The image recording computer systems receive electrical signals from the transducers and generates a first file, which represents a high resolution image, and a second file, which represents a low resolution image. The control computer system maintains a data structure which represents an assignment of transducers to two-dimensional spatial vectors and depicts the images on the screen, wherein a reference point in each image is arranged on the screen in a coordinate system of the screen at a location which is defined by a sum of a leading vector, which is the same for all images, and the spatial vector.

Abstract: A dynamic pattern generator (DPG) device and method of making a DPG device are disclosed. The DPG device is used in semiconductor processing tools that require multiple electron-beams, such as direct-write lithography. The device is a self-aligned DPG device that enormously reduces the required tolerances for aligning the various electrode layers, as compared to other design configurations including the non-self-aligned approach and also greatly simplifies the process complexity and cost. A process sequence for both integrated and non-integrated versions of the self-aligned DPG device is described. Additionally, an advanced self-aligned DPG device that eliminates the need for a charge dissipating coating or layer to be used on the device is described. Finally, a fabrication process for the implementation of both integrated and non-integrated versions of the advanced self-aligned DPG device is described.

Abstract: Described herein is a method for analyzing an object using a particle beam apparatus, for example an electron beam apparatus and/or an ion beam apparatus, or using an x-ray beam device and a particle beam apparatus or an x-ray beam device, by means of which the method is carried out. In the method, information about the object is loaded from a data memory into a control device. Furthermore, a group of detection units from the multiplicity of detection units is identified using the information loaded into the control device. A first detector segment is formed from the group of detection units using the control device. Interaction particles and/or interaction radiation, which is/are detected, is/are generated by guiding a particle beam onto the object and scanning the object using the particle beam, where a detector segment signal is read from the detector segment.

Abstract: Described are various embodiments of methods and systems for tracing circuitry on integrated circuits using focused ion beam based imaging techniques. In one such embodiment, a method is provide for identifying functional componentry associated with a switchable power interface on an integrated circuit, wherein the switchable power interface comprises a source and a drain with a control switch therebetween, said control switch being controllable by a control signal during operation of the integrated circuit. The method comprises connecting, with deposited conductive material, the source and the drain; applying an external voltage bias to a power input of the switchable power interface via one of the source and the drain; exposing the integrated circuit to a focused ion beam; and gathering an image of the integrated circuit during exposure to determine areas of high contrast indicating functional componentry in operative connection with the switchable power interface.

Abstract: The present invention, in one embodiment, provides a method of measuring pressure or temperature using a sensor including a sensor element composed of a plurality of carbon nanotubes. In one example, the resistance of the plurality of carbon nanotubes is measured in response to the application of temperature or pressure. The changes in resistance are then recorded and correlated to temperature or pressure. In one embodiment, the present invention provides for independent measurement of pressure or temperature using the sensors disclosed herein.

Abstract: The system described herein determines a distance of a component of a particle beam device from an object to the particle beam device and sets a position of the component in the particle beam device. The component is moved from a first starting position of the component relatively in the direction of an object, which is located in a second starting position, until the component makes contact with the object. When the component makes contact with the object, an adjusting path covered by the component and/or the object during the movement is determined. The adjusting path runs along a straight line that joins a first point on the component in the first starting position to a second point on the object in the second starting position that is arranged closest to the first point on the component along this line. The adjusting path corresponds to the distance.

Abstract: The present invention provides a method and apparatus for correcting an aberration in a charged-particle-beam device. The apparatus includes a charged-particle-beam source, a charged-particle optical system that irradiates a specimen with charged particles emitted from the charged-particle-beam source, an aberration corrector that corrects an aberration of the charged-particle optical system, a control unit that controls the charged-particle optical system and the aberration corrector, a through-focus imaging unit that obtains plural Ronchigrams in which a focal position of the charged-particle optical system is changed, and an aberration calculation unit that divides the obtained Ronchigram into plural local areas, and calculates the amount of the aberration based on line focuses detected in the local areas.

Abstract: A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.

Abstract: A substrate can efficiently be manufactured by separating the alignment and the actual processing when an alignment mark is provided, which is fixed with respect to the substrate and when position information on a position of a process area on the substrate is retrieved with respect to the alignment mark before the substrate is processed. During the processing alignment can then be performed by redetermining the position of the alignment mark only once and by using the stored position information on the position of the process area.

Abstract: A crystal analysis apparatus includes: a measurement data storage configured to store electron back-scattering pattern (EBSP) data measured at electron beam irradiation points on a plurality of cross-sections of a sample formed substantially in parallel at prescribed intervals; a crystal orientation database configured to accumulate therein information of crystal orientations corresponding to EBSPs; and a map constructing unit that constructs a three-dimensional crystal orientation map based on distribution of crystal orientations in normal directions of a plurality of faces of a polyhedral image having the cross-sections arranged at the prescribed intervals by reading out the crystal orientations in the normal directions of the faces from the crystal orientation database on the basis of the EBSP data stored in the measurement data storage.

Abstract: An apparatus for use in analysing microbial growth on a solid culture medium in a culture plate, the apparatus including an image capture device, a support for supporting the culture plate for the image capture device to capture an image of the solid culture medium and any microbial growth, a ring light between the image capture device and the support, for diffusely illuminating one side of the culture plate, and a frame for positioning the image capture device, support and ring light relative to each other.

Abstract: Ordinary charged particle beam apparatuses have each been an apparatus manufactured for dedicated use in making observations in a gas atmosphere at atmospheric pressure or at a pressure substantially equal thereto. There have existed no devices capable of simply making observations using an ordinary high-vacuum charged particle microscope in a gas atmosphere at atmospheric pressure or at a pressure approximately equal thereto. Furthermore, ordinary techniques have been incapable of observing the same spot of the sample in such an atmosphere using a charged particle beam and light simultaneously.

Abstract: Among other things, systems and techniques are provided for detecting defects on a wafer based upon non-correctable error data yielded from a scan of the wafer to determine a topology of the wafer. The non-correctable error data is reconstructed to generate a non-correctable error image map, which is transformed to generate a projection. In some embodiments, the non-correctable error image map is transformed via a feature extraction transform such as a Hough transform or a Radon transform. In some embodiments, the projection is compared to a set of rules to identify a signature in the non-correctable error image map indicative of a defect.

Abstract: The invention relates to an apparatus and method for inspecting a sample. The apparatus comprises a generator for generating an array of primary charged particle beams (33), and a charged particle optical system with an optical axis (38). The optical system comprises a first lens system (37, 310) for focusing all primary beams (33) into a first array of spots in an intermediate plane, and a second lens system (313, 314) for focusing all primary beams (33) into a second array of spots on the sample surface (315). The apparatus comprises a position sensitive backscattered charged particle detector (311) positioned at or near the intermediate plane. The second lens system comprises an electromagnetic or electrostatic lens which is common for all charged particle beams. Preferably the second lens system comprises a magnetic lens for rotating the array of primary beams (33) around the optical axis (38) to position the second array of charged particle spots with respect to the first array at an angle.

Abstract: A system, method and a non-transitory compute readable medium for evaluating a high aspect ratio (HAR) hole having a nanometric scale width and formed in a substrate, including obtaining, during an illumination period, multiple measurement results by an electrostatic measurement device that comprises a probe tip that is placed in proximity to the HAR hole; wherein multiple locations within the HAR hole are illuminated with a beam of charged particles during the illumination period; and processing the multiple measurement results to determine a state of the HAR hole.

Abstract: We describe the use of a high-quality-factor torsional resonator of microscale dimensions. The resonator has a paddle that is supported by two nanoscale torsion rods made of a very low thermal conductivity material, such as amorphous (“a-”) silicon. The body of the torsion paddle is coated with an infrared-absorbing material that is thin and light weight, but provides sufficient IR absorption for the applications. It may be placed above a reflecting material of similar dimensions to form a quarter wave cavity. Sensing of the response of the paddle to applied electromagnetic radiation provides a measure of the intensity of the radiation as detected by absorption, and the resulting temperature change, in the paddle.

Abstract: A drying system, which can be implemented in an atomic force microscopy (AFM) machine according to the invention, includes an elastomer having elasticity and disposed between an AFM scan head device and a platen to form a chamber. A sample supporting substrate is disposed in the chamber and for placement of a specimen. A gas inlet pipeline extends from an outside of the chamber to an inside of the chamber to introduce a drying gas into the chamber. A gas outlet pipeline extends from the inside of the chamber to the outside of the chamber to exhaust the drying gas out of the chamber. Using the mechanism of introducing and exhausting the drying gas can exhaust the moisture out of the chamber, so that the relative humidity (RH) is decreased below 5% and a constant internal pressure is held in the space to become stable.

Abstract: The present invention provides an improved electron-optical apparatus for the inspection and review of the specimen, and for the defect inspection, an inspection mode of operation is performed to generate inspection data, wherein the large beam current is formed by a magnetic immersion lens to scan the specimen, and preferably the objective lens system, a swing objective retarding immersion lens, focuses the beam current and generates the large scanning field, and for the defect review, the review mode of operation is performed to analyze the defects, wherein the large beam current is abandoned and the small beam current is adopted to examine the specimen without a large scanning field, and in order to properly select and detect signal charged particles excited from the specimen, a first Wien filter is utilized to select the acquired signal particles and a second Wien filter is used to compensate the aberrations induced when the signal particles pass through the first Wien filter.

Abstract: A new apparatus of plural charged particle beams with multi-axis magnetic lenses is provided, which comprises a plurality of sub-columns The apparatus employs two modified multi-axis magnetic lenses, and magnetic sub-lenses thereof therefore function as the objective lenses and the condenser lenses of all the sub-columns respectively. The plurality of sub-columns can perform the same function or different functions required for observing a surface of a specimen, such as high-throughput inspection and high-resolution review of interested features thereon. Accordingly, the apparatus can be used as a yield management tool in semiconductor manufacturing industry.

Abstract: A mechanism is provided for ratcheting a double strand molecule. The double strand molecule is driven into a Y-channel of a membrane by a first voltage pulse. The Y-channel includes a stem and branches, and the branches are connected to the stem at a junction. The double strand molecule is slowed at the junction of the Y-channel based on the first voltage pulse being weaker than a force required to break a base pair of the double strand molecule. The double strand molecule is split into a first single strand and a second single strand by driving the double strand molecule into the junction of the Y-channel at a second voltage pulse.

Abstract: A mechanism is provided for ratcheting a double strand molecule. The double strand molecule is driven into a Y-channel of a membrane by a first voltage pulse. The Y-channel includes a stem and branches, and the branches are connected to the stem at a junction. The double strand molecule is slowed at the junction of the Y-channel based on the first voltage pulse being weaker than a force required to break a base pair of the double strand molecule. The double strand molecule is split into a first single strand and a second single strand by driving the double strand molecule into the junction of the Y-channel at a second voltage pulse.

Abstract: Cantilevers, SPM tips and nanomachining tools are created in the plane of wafers to obtain new and high performance parts. The method produces more parts for any given wafer, then conventional methods and allows every part on any given wafer to be different from any other, permitting great freedom in new SPM and nanomachining techniques and product development.

Abstract: The present invention provides an apparatus and method including hardware and software, which allows collecting and analyzing of data to obtain information about mechanical properties of soft materials. This allows surface mapping of viscoelastic properties in a high-resolution and fast manner. It also allows finding the degree of nonlinearity of the material response of the sample during the measurements. The apparatus can be used as a stand-alone device, or an add-on to either the existing atomic force microscope or nanoindenter device.

Abstract: A transmission electron microscope (100) includes an electron beam source (2), an illumination lens system (4), an objective lens (8), a projector lens (12), an imager (14) for capturing the TEM image projected by the projector lens (12), a display controller (22) for causing the TEM image captured by the imager (14) to be displayed at a given size reduction percentage on a display device (20), and a control unit (24) for controlling the objective lens (8). The control unit (24) controls the amount of underfocus of the objective lens (8) on the basis of the size reduction percentage to display an edge enhanced image.

Abstract: A sensor device comprises a dielectric substrate (52); and a metal layer (53) on the substrate (52) with at least one array of cavities (54) therein and adapted to support L-SPR, each of the cavities (54) in the metal layer (53) having an opening (56) and a closed bottom (58) and widening from opening to bottom. A bed of dielectric material (62) is provided over the bottom (58) of each cavity (54) to reduce its apparent depth, the bed surface (62) being functionalized to bind to receptor moieties (64). This sensor device is particularly designed for SPR detection, but can be used in other detection techniques.

Abstract: Apparatus having a magnetic lens configured to diverge an electron beam are useful in three-dimensional imaging using an electron microscope. The magnetic lens includes a body member having a core and defining a gap, and a winding surrounding a portion of the core. The body member and winding are configured such that an electrical current through the winding produces a magnetic field proximate to the gap.

Abstract: A semiconductor substrate inspection system includes an e-beam inspection system configured to deliver electrons to a specimen semiconductor substrate. A sensor is configured to detect reflected electrons that reflect off the surface of the specimen semiconductor substrate. An analysis unit is configured to determine a number of electrons received by the semiconductor substrate, and to determine at least one target region including at least one defect of the semiconductor substrate. A reference image module is in electrical communication with the analysis unit. The reference image module is configured to generate a first digital image having a plurality of pixels, and to adjust a gray-scale level of the pixels included in the target region based on the number electrons included in each pixel to generate a second digital image that excludes the at least one defect.

Abstract: An ion implanter has a coating of low resistivity silicon carbide on one or more of the conductive surfaces that are exposed to ions. For example, ions are generated in an ion source chamber, and the interior surfaces of the walls are coated with low resistivity silicon carbide. Since silicon carbide is hard and resistant to sputtering, this may reduce the amount of contaminant ions that are introduced into the ion beam that is extracted from the ion source chamber. In some embodiments, the extraction electrodes are also coated with silicon carbide to reduce the contaminant ions introduced by these components.

Abstract: A TEM specimen kit is disclosed, which comprises: (a) a top substrate and a bottom substrate, the top and the bottom substrates being transparent and substantially parallel to each other; (b) a first spacer and a second spacer, located beneath the top substrate and sitting on the bottom substrate, the second spacer being opposite to and spaced apart from the first spacer at a distance of d; and (c) a chamber formed between the top and bottom substrate and between the first and second spacer, the chamber having two ends open to the atmosphere and characterized by having a height defined by the thickness h of the spacer, wherein the height being smaller than the diameter of a red blood cell. Also enclosed are methods for preparing a dry specimen for TEM nanoparticle characterization, and methods for analyzing TEM images of nanoparticles in a liquid sample.

Abstract: A method is provided for slice and view processing of samples with dual beam systems. The slice and view processing includes providing a location for particles and material resulting from the slice and view process to collect without obscuring the sample face to be viewed and imaged. This location is formed as an undercut located beneath or in front of the sample face.

Abstract: Provided is a charged particle beam device provided with: a charged particle source; an objective lens for focusing a charged particle beam emitted from the charged particle source onto a sample; a detector for detecting a secondary charged particle emitted from the sample; a probe capable of coming into contact with the sample; a gas nozzle for emitting conductive gas to the sample; and a control unit for controlling the drive of the probe and gas emission from the gas nozzle, wherein before bringing the probe into contact with the sample after applying the charged particle beam to the sample to machine the sample, the control unit emits gas toward a machining position from the gas nozzle and applies the charged particle beam to form a conductive film on a machining portion of the sample, and the charged particle beam device is provided with a contact detection unit for determining that the conductive film formed on the machining portion and the probe have come into contact with each other.

Abstract: A model based measurement method is capable of estimating a cross-sectional shape by matching various pre-created cross-sectional shapes with a library of SEM signal waveforms. The present invention provides a function for determining whether or not it is appropriate to create a model of a cross-sectional shape or a function for verifying the accuracy of estimation results to a conventional model based measurement method, wherein a solution space (expected solution space) is obtained by matching library waveforms and is displayed before measuring the real pattern by means of model based measurement. Moreover, after the real pattern is measured by means of model based measurement, the solution space (real solution space) is obtained by matching the real waveforms with the library waveforms and is displayed.

Abstract: A method for determining a value of a local contact potential difference by noncontact atomic force microscopy. For one or more cantilever positions above a surface of a sample: i) performing two atomic force microscopy measurements, using an oscillating cantilever, ii) thereby determining two distinct voltage values of DC voltage applied between the cantilever and the sample, and iii) obtaining a value of a local contact potential difference based, at least in part, on the two distinct voltage values determined. Wherein substantially similar distinct values indicate a substantially similar value of frequency shifts of cantilever oscillation, as measured for each of said distinct values.

Abstract: Measuring a feature on a wafer, the feature including at least two edges. Scanning the wafer with an electron beam over the length of a first scan interval that includes at least a portion of a first edge of the feature. Preventing the electron beam from illuminating the wafer while moving the scan position of the electron beam across a portion of the wafer to a second scan interval that includes at least a portion of a second edge of the feature. Scanning the wafer with an electron beam over the length of the second scan interval. Determining a distance between the first and second edges of the feature.

Abstract: The present invention provides a charged particle beam device capable of automatically setting proper analysis positions for defects having various shapes. This charged particle beam device includes: an electron source for emitting an electron beam; a condenser lens for converging the electron beam emitted from the electron source; deflection means for changing a position of the electron beam converged by the condenser lens; an objective lens for constricting the electron beam changed by the deflection means so as to irradiate an inspection object therewith; a sample stage on which the inspection object is to be mounted; and defect analysis means for analyzing a defect based on information as to elements released from a defective portion of the inspection object by the irradiation with the electron beam, wherein the defect analysis means determines an analysis point based on a shape of the defect from among defect areas decided as one defect by the defect analysis means.

Abstract: Examining a sample in a charged-particle microscope of a scanning transmission type includes: Providing a beam of charged particles that is directed from a source through an illuminator so as to irradiate the sample; Providing a detector for detecting a flux of charged particles traversing the sample; Causing said beam to scan across a surface of the sample, and recording an output of the detector as a function of scan position, resulting in accumulation of a charged-particle image of the sample, Embodying the detector to comprise a plurality of detection segments; Combining signals from different segments of the detector so as to produce a vector output from the detector at each scan position, and compiling this data to yield a vector field; and Mathematically processing said vector field by subjecting it to a two-dimensional integration operation, thereby producing an integrated vector field image.

Abstract: The objective of the invention is to provide a measuring method that can determine pattern contours and dimensions with high precision even if an object to be measured shrinks due to electron beam radiations. In order to achieve this objective, a method, which performs measurements by irradiating an electron beam onto a sample having a pattern formed on a primary coating thereof, prepares an SEM image and contour of the pattern (S201, S202), material parameters of the pattern part and primary coating part of the sample (S203, S204), and a beam condition in irradiating the electron beam onto the sample (S205), and uses these prepared things to calculate a pattern shape or dimensions before the irradiation of the electron beam (S206).

Abstract: A final energy filter includes a first adjustment electrode portion, an intermediate electrode portion, and a second adjustment electrode portion. The final energy filter further includes a power supply unit. The power supply unit is configured such that it applies the voltages separately to the first adjustment electrode portion, the intermediate electrode portion, and the second adjustment electrode portion. The power supply unit applies voltages to an upstream auxiliary electrode portion, a deflection electrode portion and a downstream auxiliary electrode portion, respectively, such that the energy range of ion beam in a first region between the upstream auxiliary electrode portion and the deflection electrode portion is approximately equal to that in a second region between the deflection electrode portion and the downstream auxiliary electrode portion.

Abstract: A charged particle beam apparatus includes a charged particle beam source which irradiates a sample with a charged particle beam, an electromagnetic lens, a lens control electric source for controlling strength of a convergence effect of the electromagnetic lens; and a phase compensation circuit which is connected to the lens control electric source in parallel with the electromagnetic lens, and controls a lens current at the time of switching the strength of the convergence effect of the electromagnetic lens such that the lens current monotonically increases or monotonically decreases.

Abstract: An interface, a scanning electron microscope and a method for observing an object that is positioned in a non-vacuum environment. The method includes: passing at least one electron beam that is generated in a vacuum environment through at least one aperture out of an aperture array and through at least one ultra thin membrane that seals the at least one aperture; wherein the at least one electron beam is directed towards the object; wherein the at least one ultra thin membrane withstands a pressure difference between the vacuum environment and the non-vacuum environment; and detecting particles generated in response to an interaction between the at least one electron beam and the object.

Abstract: An imaging apparatus that performs focus control includes a signal conversion processing part that converts a subject image into a video signal, an image acquisition part that acquires the video signal output from the signal conversion processing part, a focusing area setting part that sets a focusing area as an evaluation value calculation area on an imaging screen acquired by the image acquisition part, an effective range selection part that obtains effective code density in an image of the focusing area with respect to each lens position while moving the lens and determines whether or not the lens position is in an effective range suitable for focusing based on the effective code density, and a focusing degree calculation part that obtains a focusing degree in the lens position when a determination that the lens position is located in the effective range is made in the effective range selection part.

Abstract: A focused ion beam apparatus includes: a focused ion beam tube configured to irradiate a focused ion beam onto a sample; a detector configured to detect secondary particles generated from the sample due to the irradiation and to output detection information regarding detected secondary particles; an image forming unit configured to form an observation image of the sample based on the detection information; a storage unit configured to store positional relation between a first processing area set on an observation image of a first sample and a cross-section surface of the first sample; and a processing area setting unit configured to automatically set a second processing area on an observation image of a second sample based on the positional relation stored in the storage unit and a position of a cross-section surface of the second sample on the observation image of the second sample.

Abstract: A charged particle instrument including a controlling and operating unit for controlling a charged particle source, deflecting means, and focus changing means and making a data for an image by an electric signal detected by a detector, and a recording unit for preserving a correction coefficient registered at each image-acquisition, in which the controlling and operating unit acquires plural images while changing a focus, and controls an optical condition such that a landing angle of a charged particle beam becomes perpendicular when an image for measurement is acquired on the basis of a position shift amount of a mark in the image and a correction coefficient registered to the recording unit.

Abstract: Systems and methods for determining one or more parameters of a wafer inspection process are provided. One method includes aligning optical image(s) of an alignment target to their corresponding electron beam images generated by an electron beam defect review system. The method also includes determining different local coordinate transformations for different subsets of alignment targets based on results of the aligning. In addition, the method includes determining positions of defects in wafer inspection system coordinates based on coordinates of the defects determined by the electron beam defect review system and the different local coordinate transformations corresponding to different groups of the defects into which the defects have been separated. The method further includes determining one or more parameters for an inspection process for the wafer based on defect images acquired at the determined positions by a wafer inspection system.

Abstract: Ion beam sample preparation apparatus and methods are described. The apparatus has disposed in a vacuum chamber at least one tilting ion beam irradiating means with intensity control, a rotation stage with rotation control, a sample holder, and an adjustable positioning stage that has two axes of positional adjustment that are operable to move the region of the sample being prepared by the ion beam relative to the ion beam. The apparatus may also include a vacuum-tight optical window for observing the sample and a shutter for protecting the optical window from debris while the sample is prepared in the ion beam. The apparatus may also include an instrument controller responsive to the state of the apparatus and to the condition of the sample and is operable to control the preparation of the sample.

Abstract: Methods for fabricating nanoscale array structures suitable for surface enhanced Raman scattering, structures thus obtained, and methods to characterize the nanoscale array structures suitable for surface enhanced Raman scattering. Nanoscale array structures may comprise nanotrees, nanorecesses and tapered nanopillars.

Abstract: A magnetic permeability detector includes an LC oscillator circuit including a coil and a capacitor; and a resistor connected in series with the coil.

Abstract: A lower pole piece of an electromagnetic superposition type objective lens is divided into an upper magnetic path and a lower magnetic path. A voltage nearly equal to a retarding voltage is applied to the lower magnetic path. An objective lens capable of acquiring an image with a higher resolution and a higher contrast than a conventional image is provided. An electromagnetic superposition type objective lens includes a magnetic path that encloses a coil, a cylindrical or conical booster magnetic path that surrounds an electron beam, a control magnetic path that is interposed between the coil and sample, an accelerating electric field control unit that accelerates the electron beam using a booster power supply, a decelerating electric field control unit that decelerates the electron beam using a stage power supply, and a suppression unit that suppresses electric discharge of the sample using a control magnetic path power supply.

Abstract: A charged particle beam writing method includes determining whether a difference between one of the total area of a pattern and the number of shots in a stripe region with respect to one of adjacent stripe regions of the stripe regions and one of the total area and the number of shots with respect to the other of the adjacent stripe regions exceeds a threshold value, re-dividing, when the difference exceeds the threshold value, a stripe region where the total area or the number of shots is larger than that of the other stripe region in the adjacent stripe regions so that the difference of the total area or the number of shots becomes lower than or equal to the threshold value, and writing a pattern in the stripe regions including a re-divided stripe region, in the writing order of arrangement of the stripe regions.