Abstract: The semiconductor light receiving element 1 includes a semiconductor substrate 101, and a semiconductor layer having a photo-absorption layer 105 disposed on the top of the semiconductor substrate 101. The semiconductor layer of the semiconductor light receiving element 1 containing at least the photo-absorption layer 105 has a mesa structure, and a side wall of the mesa is provided with a protective film 113 covering the side wall. The protective film 113 is a silicon nitride film containing hydrogen, and a hydrogen concentration in one surface of the protective film 113 located at the side of the mesa side wall is lower than a hydrogen concentration in the other surface of the protective film 113 located at the side that is opposite to the side of the mesa side wall.

Abstract: An image sensor and a method for fabricating the same are provided. The image sensor includes a first conductive type substrate including a trench formed in a predetermined portion of the first conductive type substrate, a second conductive type impurity region for use in a photodiode, formed below a bottom surface of the trench in the first conductive type substrate, and a first conductive type epitaxial layer for use in the photodiode, buried in the trench.

Abstract: The light use efficiency of a thin film diode is improved even when the semiconductor layer of the diode has a small thickness, thereby improving the light detection sensitivity of the diode. A thin film diode (130) having a first semiconductor layer (131) including, at least, an n-type region (131n) and a p-type region (131p) is provided on one side of a substrate (101), and a light-blocking layer (160) is provided between the substrate and the first semiconductor layer. Asperities are provided on the side of the light-blocking layer facing the first semiconductor layer. The first semiconductor layer has a geometry of asperities conforming with the asperities on the light-blocking layer. Light incident on the light-blocking layer is diffusely reflected and enters the first semiconductor layer.

Abstract: An IR sensing transistor according to an exemplary embodiment of the present invention includes: a light blocking layer formed on a substrate; a gate insulating layer formed on the light blocking layer; a semiconductor formed on the gate insulating layer; a pair of ohmic contact members formed on the semiconductor; a source electrode and a drain electrode formed on respective ones of the ohmic contact members; a passivation layer formed on the source electrode and the drain electrode; and a gate electrode formed on the passivation layer, wherein substantially all of the gate insulating layer lies on the light blocking layer.

Abstract: A photo sensing unit used in a photo sensor includes a photo sensing transistor, a storage capacitor, and a switching transistor. The photo sensing transistor receives a light signal for inducing a photo current correspondingly, and a source and a gate thereof are respectively coupled to the first signal source and the second signal source. The storage capacitor stores electrical charges induced by the light signal, one terminal thereof is coupled to drain of the photo sensing transistor, and another terminal thereof is coupled to a low voltage. The switching transistor is controlled by the second signal source for outputting a readout signal from the storage capacitor to the signal readout line. The threshold voltage of the photo transistor is higher than that of the switching transistor.

Abstract: In a display apparatus, a light sensor of a display includes a light sensing layer, a source electrode, a drain electrode, an insulating layer, and a gate electrode to sense light from an external source. The light sensing layer is disposed on the substrate to sense light, and the source and drain electrodes are disposed on the light sensing layer and are covered by the insulating layer. The gate electrode is disposed on the insulating layer. An edge of the gate electrode is disposed on the light sensing layer at least in an area where the light sensing layer is overlapped with the source and drain electrodes.

Abstract: A backside illumination (BSI) image sensor having a light receiving part at the wafer or die backside, and a manufacturing method thereof, are disclosed. The method includes polishing the light receiving part so that a super via protrudes, forming a first insulating layer to cover the protruding super via and the light receiving part, forming a photoresist pattern on the first insulating layer to expose a pad region, etching the first insulating layer to form spacers at sides of the protruding super via, repeatedly forming a second insulating layer covering the spacers, the super via and the light receiving part and etching the second insulating layer so that the spacers increase in width and cover an upper surface of the light receiving part, and forming a metal pad in the pad region to contact the super via.

Abstract: The semiconductor device includes: a base; a first mount placed on the bottom of the base; a second mount placed on the top of the base; a first light-emitting element placed on the bottom of the first mount; and a second light-emitting element placed on the top of the second mount for emitting light. The first light-emitting element and the second light-emitting element are placed so that the emission direction of light from the second light-emitting element is at an angle of depression with respect to the emission direction of light from the first light-emitting element and that the emission direction of light from the first light-emitting element and the emission direction of light from the second light-emitting element substantially coincide with each other as viewed from above the base.

Abstract: An insulated gate field effect transistor, a solid-state image pickup device using the same, and manufacturing methods thereof that suppress occurrence of a shutter step and suppress occurrence of punch-through and injection. An insulated gate field effect transistor having a gate electrode on a semiconductor substrate with a gate insulating film interposed between the semiconductor substrate and the gate electrode, and having a source region and a drain region formed in the semiconductor substrate on both sides of the gate electrode, the insulated gate field effect transistor including: a first diffusion layer of a P type formed in the semiconductor substrate at a position deeper than the source region and the drain region; and a second diffusion layer of the P type having a higher concentration than the first diffusion layer and formed in the semiconductor substrate at a position deeper than the first diffusion layer.

Abstract: A photovoltaic cell is provided as a composite unit together with elements of an integrated circuit on a common substrate. In a described embodiment, connections are established between a multiple photovoltaic cell portion and a circuitry portion of an integrated structure to enable self-powering of the circuitry portion by the multiple photovoltaic cell portion.

Abstract: A photovoltaic cell is provided as a composite unit together with elements of an integrated circuit on a common substrate. In a described embodiment, connections are established between a photovoltaic cell portion and a circuitry portion of an integrated structure to enable self-powering of the circuitry portion by the photovoltaic cell portion.

Abstract: A solid-state imaging device includes a plurality of pixels stored in one-dimensional or two-dimensional array, each of the plurality of pixels including a photodiode receiving light and producing photocharges, an overflow gate coupled to the photodiode and transferring photocharges that overflow the photodiode during a storage operation, and a storage capacitor element that stores the photocharges transferred by the overflow gate during the storage operation.

Abstract: A horizontal scanning period is divided into n parts (n is a natural number), so that horizontal scanning can be performed (n×y) times in one frame period. That is, n signals can be outputted from each pixel, and storage times of the n signals are different from one another. Then, since a signal suited to the intensity of light irradiated to each pixel can be selected, information of an object can be accurately read.

Abstract: An image sensor and a method of manufacturing an image sensor. A method of manufacturing an image sensor may include forming an interconnection and/or an interlayer dielectric over a semiconductor substrate including circuitry connected to an interconnection. A method of manufacturing an image sensor may include forming a photodiode having a first doping layer and/or a second doping layer over an interlayer dielectric, and forming a via hole through a photodiode, which may expose a portion of a surface of an interconnection. A method of manufacturing an image sensor may include forming a barrier pattern over a via hole which may cover an exposed surface of a second doping layer, and a contact plug on and/or over a via hole, which may connect an interconnection and a first doping layer. An upper portion of a contact plug may be etched. An insulating layer may be formed over a contact plug.

Abstract: To provide a photoelectric conversion device with low power consumption and a method for operating the photoelectric conversion device. The photoelectric conversion device includes a charge storage capacitor portion, a photodiode, and a plurality of transistors. The charge storage capacitor portion is charged after being reset. Then, the charge storage capacitor portion is discharged through the photodiode or a current mirror circuit connected to the photodiode for a given period of time, and after that, the potential of the charge storage capacitor portion is read. Since power is consumed only at the time of charging, power consumption can be reduced.

Abstract: An apparatus, system, and method are disclosed for providing optical power to a semiconductor chip. An active semiconductor layer of the semiconductor chip is disposed toward a front side of the semiconductor chip. The active semiconductor layer comprises one or more integrated circuit devices. A photovoltaic semiconductor layer of the semiconductor chip is disposed between the active semiconductor layer and a back side of the semiconductor chip. The back side of the semiconductor chip is opposite the front side of the semiconductor chip. The photovoltaic semiconductor layer converts electromagnetic radiation to electric power. One or more conductive pathways between the photovoltaic semiconductor layer and the active semiconductor layer provide the electric power from the photovoltaic semiconductor layer to the one or more integrated circuit devices of the active semiconductor layer.

Abstract: The present invention provides a thin film transistor having high performance in a liquid crystal display, and a manufacturing method of a liquid crystal display according to an exemplary embodiment of the present invention that includes: forming a gate line including a gate electrode on a substrate; forming a gate insulating layer on the gate line; forming a data line including a source electrode and a drain electrode facing the source electrode on the gate insulating layer; forming a partition defining a pixel area and having an opening region exposing the gate insulating layer on the gate electrode, the source electrode and the drain electrode on the gate line, and the data line and the drain electrode; forming a semiconductor in the opening region; forming a color filter in the pixel area defined by the partition; and forming a pixel electrode connected to the drain electrode on the color filter.

Abstract: A light-emitting body of rapid speed of response and high light emission intensity, and an electron beam detector, scanning electron microscope and mass spectroscope using this are provided. In the light-emitting body 10 according to the present invention, when fluorescence is emitted by a nitride semiconductor layer 14 formed on one face 12a of a substrate 12 in response to incidence of electrons, at least some of this fluorescence is transmitted through this substrate 12, whereby that fluorescence is emitted from the other face 12b of the substrate. The response speed of this fluorescence is not more than ?sec order. Also, the intensity of emission of this fluorescence is almost identical to that of a conventional P47 phosphor. Specifically, with this light-emitting body 10, a response speed and light emission intensity are obtained that are fully satisfactory for application to a scanning electron microscope or mass spectroscope.

Abstract: This invention is directed to reduce a deterioration in image quality after thinning operation when pixels are read out upon thinning. An image sensor is designed such that different gains are applied on a pixel basis. After periodical gains are applied to the respective pixels, the pixels of the same colors are added and averaged to obtain a low-pass filter effect before thinning processing for the pixels in the sensor, thereby preventing the occurrence of aliasing (moiré) due to thinning.

Abstract: The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a semiconductor substrate; a first epitaxy semiconductor layer disposed on the semiconductor substrate and having a first type of dopant and a first doping concentration; a second epitaxy semiconductor layer disposed over the first epitaxy semiconductor layer and having the first type of dopant and a second doping concentration less than the first doping concentration; and an image sensor on the second epitaxy semiconductor layer.

Abstract: A high-power light-emitting diode (LED) lamp has a plurality of units. Each unit includes an LED die and a thermo-electric cooling device coupled to the LED die. A power source supplies a fixed current to the thermo-electric cooling device wherein the fixed current is based on heat generated by the LED die in normal operation. Accordingly, the unit operates without a controller.

Abstract: A light emitting device is constituted by flip-chip mounting a GaN-based LED chip. The GaN-based LED chip includes a light-transmissive substrate and a GaN-based semiconductor layer formed on the light-transmissive substrate, wherein the GaN-based semiconductor layer has a laminate structure containing an n-type layer, a light emitting layer and a p-type layer in this order from the light-transmissive substrate side, wherein a positive electrode is formed on the p-type layer, the electrode containing a light-transmissive electrode of an oxide semiconductor and a positive contact electrode electrically connected to the light-transmissive electrode, and the area of the positive contact electrode is half or less of the area of the upper surface of the p-type layer.

Abstract: Techniques are provided for obtaining a photoelectric conversion device having a favorable spectral sensitivity characteristic and reduced variation in output current without a contamination substance mixed into a photoelectric conversion layer or a transistor, and for obtaining a highly reliable semiconductor device including a photoelectric conversion device. A semiconductor device may include, over an insulating surface, a first electrode; a second electrode; a color filter between the first electrode and the second electrode; an overcoat layer covering the color filter; and a photoelectric conversion layer over the overcoat layer, where one end portion of the photoelectric conversion layer is in contact with the first electrode, and where an end portion of the color filter lies inside the other end portion of the photoelectric conversion layer.

Abstract: Example embodiments disclose transistors, methods of manufacturing the same, and electronic devices including transistors. An active layer of a transistor may include a plurality of material layers (oxide layers) with different energy band gaps. The active layer may include a channel layer and a photo sensing layer. The photo sensing layer may have a single-layered or multi-layered structure. When the photo sensing layer has a multi-layered structure, the photo sensing layer may include a first material layer and a second material layer that are sequentially stacked on a surface of the channel layer. The first layer and the second layer may be alternately stacked one or more times.

Abstract: An amorphous oxide semiconductor contains at least one element selected from In, Ga, and Zn at an atomic ratio of InxGayZnz, wherein the density M of the amorphous oxide semiconductor is represented by the relational expression (1) below: M?0.94×(7.121x+5.941y+5.675z)/(x+y+z)??(1) where 0?x?1, 0?y?1, 0?z?1, and x+y+z?0.

Abstract: A semiconductor structure having a transistor region and an optical device region includes a transistor in a first semiconductor layer of the semiconductor structure, wherein the first semiconductor layer is over a first insulating layer, the first insulating layer is over a second semiconductor layer, and the second semiconductor layer is over a second insulating layer. A gate dielectric of the transistor is in physical contact with a top surface of the first semiconductor layer, and the transistor is formed in the transistor region of the semiconductor structure. A waveguide device in the optical device region and a third semiconductor layer over a portion of the second semiconductor layer.

Abstract: A phototransistor includes a source electrode and a gate electrode which have the same electric potential, a transparent electrode formed on a surface of an interlayer insulating film so as to be located above a channel region, and a refresh controller for reducing a charge accumulated in a portion of the channel region, the portion facing the transparent electrode, by applying a voltage between the transparent electrode, and the gate electrode and the source electrode.

Abstract: The objective of this invention is to provide a semiconductor device containing a photodiode and having stable, high sensitivity with respect to short wavelength light near 405 nm, and a manufacturing method for said semiconductor device. PIN photodiode (100C) has the following layers formed on silicon substrate (110): p-type silicon region (112), n-type silicon layer (114), field oxide film (118), silicon oxide film (120c) that covers the surface of the active region, and silicon nitride film (122c) that covers silicon oxide film (120c). Said field oxide film (118) contains extending portions (160) extending to the interior of the active region; the side portions of extending portions (160) are connected to silicon oxide film (120c), and the exposed surface portions of extending portions (160) become regions for hydrogen diffusion.

Abstract: A manufacturing method of a photoelectric conversion device includes the following steps: forming a first electrode over a substrate; and, over the first electrode, forming a photoelectric conversion layer that includes a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode. The manufacturing method further includes the step of removing a part of the second semiconductor layer and a part of the third semiconductor layer in a region of the photoelectric conversion layer so that the third semiconductor layer does not overlap the first electrode.

Abstract: Pixel sensor cells, method of fabricating pixel sensor cells and design structure for pixel sensor cells. The pixel sensor cells including: a photodiode body in a first region of a semiconductor layer; a floating diffusion node in a second region of the semiconductor layer, a third region of the semiconductor layer between and abutting the first and second regions; and dielectric isolation in the semiconductor layer, the dielectric isolation surrounding the first, second and third regions, the dielectric isolation abutting the first, second and third regions and the photodiode body, the dielectric isolation not abutting the floating diffusion node, portions of the second region intervening between the dielectric isolation and the floating diffusion node.

Abstract: A radiation detector, a method of manufacturing a radiation detector, and a lithographic apparatus comprising a radiation detector. The radiation detector has a radiation sensitive surface. The radiation sensitive surface is sensitive to radiation wavelengths between 10-200 nm and charged particles. The radiation detector has a silicon substrate, a dopant layer, a first electrode, and a second electrode. The silicon substrate is provided in a surface area at a first surface side with doping profile of a certain conduction type. The dopant layer is provided on the first surface side of the silicon substrate. The dopant layer has a first layer of dopant material and a second layer. The second layer is a diffusion layer in contact with the surface area at the first surface side of the silicon substrate. The first electrode is connected to dopant layer. The second electrode is connected to the silicon substrate.

Abstract: Imagers reproduce an image by converting photons to a signal that is representative of the image. A sensor readout module reads reset and signal voltages corresponding to a plurality of integration times for each of a plurality of pixels. The sensor readout module is capable of determining whether the differences between reset and signal voltages corresponding to respective integration times indicate a saturation condition of the pixel. Accordingly, the sensor readout module may provide an output signal based on reset and signal voltages corresponding to an integration time that is less than an integration time for reset and signal voltages that indicate the saturation condition. A normalization module may normalize the output signal to correspond with a linear response curve.

Abstract: Imager devices have a sensor array and a peripheral region at least partially surrounding the sensor array. At least one transistor in the peripheral region has a gate stack sidewall spacer that differs in composition from a gate stack sidewall spacer on at least one transistor in the sensor array. Imaging systems include such an imager device configured to communicate electrically with at least one electronic signal processor and at least one memory storage device. Methods of forming such imager devices include providing layers of oxide and nitride materials over transistors on a workpiece, and using etching processes to form gate stack sidewall spacers on the transistors.

Abstract: Semiconductor devices and methods for making such devices that are especially suited for high-frequency applications are described. The semiconductor devices combine a SIT (or a junction field-effect transistor [JFET]) architecture with a PN super-junction structure. The SIT architecture can be made using a trench formation containing a gate that is sandwiched between thick dielectric layers. While the gate is vertically sandwiched between the two isolating regions in the trench, it is also connected to a region of one conductivity type of the super-junction structure, thereby allowing control of the current path of the semiconductor device. Such semiconductor devices have a lower specific resistance and capacitance relative to conventional planar gate and recessed gate SIT semiconductor devices. Other embodiments are described.

Abstract: A semiconductor device includes: a semiconductor substrate 1; a through electrode 7 extending through the semiconductor substrate 1; a diffusion layer 24 formed in a region of an upper portion of the semiconductor substrate 1 located on a side of the through electrode 7; and a diffusion layer 22 formed in an upper portion of the diffusion layer 24. A portion of the side surface of the through electrode 7 facing the diffusion layer 24 is curved, and a portion of the surface of the diffusion layer 24 facing the through electrode 7 is curved.

Abstract: Protection for infrared sensing device, and more particularly, to a monolithically integrated uncooled infrared sensing device using IC foundry compatible processes. The proposed infrared sensing device is fabricated on a completed IC substrate. In an embodiment, the infrared sensing device has a single crystal silicon plate with an absorbing layer supported a pair of springs. The absorbing layer absorbs infrared radiation and heats up the underlying silicon layer. As a result, an n well in the silicon layer changes its resistance related to its temperature coefficient of resistance (TCR). In another embodiment, the infrared sensing device has a top sensing plate supported by an underlying spring structures. The top sensing plate has sensing materials such as amorphous silicon, poly silicon, SiC, SiGe, Vanadium oxide, or YbaCuO. Finally, a micro lens array is placed on top of the sensing pixel array with a gap in between.

Abstract: An image sensor includes: a substrate, at least a pixel, and at least a light shield is provided. Wherein the pixel includes a photodiode and at least a transistor, and the transistor is connected to a metal line via a contact. The light shield is positioned around at least one side of the pixel, wherein the light shield is made while forming the contact.

Abstract: A finger length a1 of a transistor P11 is longer than a finger length A1 of a transistor P1, and a finger length b1 of a transistor N11 is longer than a finger length B1 of a transistor N1. The finger length b1 of the transistor N11 is shorter than the finger length A1 of the transistor P1, and the relation: a1>A1>b1>B1 is established. In a relation between an I/O section and a logic circuit section, as for MOS transistor of the same conductive type, a finger length of a MOS transistor constituting the logic circuit section is set so as to be longer than a finger length of a MOS transistor constituting the I/O section.

Abstract: A thin film transistor (TFT) for a liquid crystal display device includes a gate electrode, a source electrode, a drain electrode, an active region including a first semiconductor layer and a second semiconductor layer interposed within the first semiconductor layer, and an ohmic contact layer formed on the active region, wherein the source and drain electrodes are formed on the ohmic contact layer.

Abstract: Provided are a photodetector capable of suppressing variations in the output characteristics among photodiodes, and a display device provided with the photodetector. A display device in use has an active matrix substrate (20) including a transparency base substrate (2), a plurality of active elements and a photodetector. The photodetector includes a light-shielding layer (3) provided on the base substrate (2), and a photodiode (1) arranged on an upper layer of the light-shielding layer (3). The light-shielding layer (3) is overlapped with the photodiode (1) in the thickness direction of the base substrate (2). The photodiode (1) includes a silicon layer (11) insulated electrically from the light-shielding layer (3). The silicon layer (11) includes a p-layer (11c), an i-layer (11b) and an n-layer (11a) that are provided adjacent to each other in the planar direction. The p-layer (11c) is formed so that its area (length Lp) will be larger than the area (length Ln) of the n-layer (11a).

Abstract: A phototransistor includes a substrate, a gate layer, a dielectric layer, an active layer, a source and a drain, and a light absorption layer. The gate layer is disposed on a top of the substrate, and the dielectric layer is disposed on a top of the gate layer. The active layer has a first bandgap and is disposed on a top of the dielectric layer, and the source and the drain are disposed on a top of the active layer. The light absorption layer has a second bandgap and is capped on the active layer, and the second bandgap is smaller than the first bandgap.

Abstract: A method of resetting a photosite is disclosed. Photogenerated charges accumulated in the photosite are reset by recombining the photogenerated charges with charges of opposite polarity.

Abstract: Back-illuminated, thin photodiode arrays with trench isolation. The trenches are formed on one or both sides of a substrate, and after doping the sides of the trenches, are filled to provide electrical isolation between adjacent photodiodes. Various embodiments of the photodiode arrays and methods of forming such arrays are disclosed.

Abstract: An organic light-emitting display apparatus includes a plurality of pixels arranged on a substrate, each pixel includes: a display region including at least one pixel thin film transistor and an organic light-emitting device electrically connected to the pixel thin film transistor; and a sensor region electrically connected to the display region to affect an image display of the display region.

Abstract: A method of manufacturing a thin film array panel is provided, which includes: forming a gate line formed on a substrate; forming a gate insulating layer on the gate line; forming a semiconductor layer on the gate insulating layer; forming an ohmic contact layer on the semiconductor layer; forming a data line and a drain electrode disposed at least on the ohmic contact layer, forming an oxide on the data line; etching the ohmic contact layer using the data line and the drain electrode as an etch mask; and forming a pixel electrode connected to the drain electrode.

Abstract: A photoelectric conversion device adopts the structure reflecting the finding that color separation by the photoelectric conversion, which utilizes the difference of the PN junction depth of a semiconductor region, has the strong tendency that separation of a B signal is easy but separation of a G signal and an R signal becomes imperfect. That is, to cope with the tendency of the imperfect color separation of a G signal and an R signal, PN junction surfaces (JNC_B, JNC_R) of two photodiodes (PDs) for R light and B light are superimposed in the depth direction, and PD to G light is arranged independently. Accordingly, the color separation property of each RGB light wavelength band can be improved, the occupying area can be reduced compared with the case where each PD of RGB light is dispersed in the plane direction, and simplification of the semiconductor layer structure can be realized.

Abstract: It is an object to provide a photoelectric conversion device whose power consumption and a mounting area are reduced and yield is improved and further to provide a photoelectric conversion device whose number of manufacturing processes and manufacturing cost are reduced. A photoelectric conversion device includes a photoelectric conversion element for outputting photocurrent corresponding to illuminance, and a resistor changing resistance corresponding to illuminance. In the photoelectric conversion device, one terminal of the photoelectric conversion element and one terminal of the resistor are electrically connected in series; the other terminal of the photoelectric conversion element is connected to a high power supply potential; the other terminal of the resistor is connected to a low power supply potential; and a light intensity adjusting unit is provided on a light reception surface side of the photoelectric conversion element or the resistor to adjust illuminance.

Abstract: The present invention provides a semiconductor photodetecting device that suppresses sensitivity of a short wavelength component of irradiated light as well as a long wavelength component thereof and has a spectral sensitivity characteristic approximately coincident with a human visibility characteristic, and an illuminance sensor including the semiconductor photodetecting device. The semiconductor photodetecting device has a P-type well region and an N-type well region provided side by side along the surface of a P-type semiconductor substrate, a high-concentration N-type region formed in the neighborhood of the surface of the P-type well region, and a high-concentration P-type region formed in the neighborhood of the surface of the N-type well region.

Abstract: Disclosed are an image sensor and a method for manufacturing the same. The image sensor can include a readout circuitry on a first substrate; an interlayer dielectric layer including at least one metal and contact plug electrically connected to the readout circuitry; and an image sensing device formed on a second substrate, bonded to the interlayer dielectric layer, and provided with a first conductive type conduction layer and a second conductive type conduction layer. An uppermost contact plug in the interlayer dielectric layer has a wall structure extending from an uppermost metal in the interlayer dielectric layer. The top surface of the uppermost contact plug makes contact with the image sensing device and is connected to an image sensing device and an uppermost metal of an adjacent pixel.

Abstract: A CMOS image sensor and fabricating method thereof by which capacitance of a floating diffusion region (FD) can be increased.