Abstract: A method for forming a micro-electro mechanical system (MEMS) device is provided. The method includes forming a first dielectric layer over a semiconductor layer and forming a blocking layer over the first dielectric layer. The method also includes bonding a CMOS substrate with the blocking layer, and the CMOS substrate includes a second dielectric layer, and the blocking layer is configured to block gas coming from the second dielectric layer. The method further includes partially removing the first dielectric layer to form a cavity between the semiconductor layer and the blocking layer. A portion of the semiconductor layer above the cavity becomes a movable element. In addition, the method includes sealing the cavity such that a closed chamber is formed to surround the movable element.

Abstract: According to example configurations herein, a leadframe includes a first conductive strip, a second conductive strip, and a third conductive strip disposed substantially adjacent and substantially parallel to each other. A semiconductor chip substrate includes a first array of switch circuits disposed adjacent and parallel to a second array of switch circuits. Source nodes in switch circuits of the first array are disposed substantially adjacent and substantially parallel to source nodes in switch circuits of the second array. When the semiconductor chip and the leadframe device are combined to form a circuit package, a connectivity interface between the semiconductor chip and conductive strips in the circuit package couples each of the source nodes in switch circuits of the first array and each of the multiple source nodes in switch circuits of the second array to a common conductive strip in the leadframe device.

Abstract: The power module includes: a ceramics substrate; a source electrode pattern, a drain electrode pattern, a source signal electrode pattern, and a gate signal electrode pattern respectively disposed on the ceramics substrate; a semiconductor device disposed on the drain electrode pattern, the semiconductor device comprising a source pad electrode and a gate pad electrode at a front surface side; a divided leadframe for source bonded to the source electrode pattern and the source pad electrode; and a divided leadframe for gate pad electrode bonded to a gate pad electrode. There is provided a power module having a simplified structure, fabricated through a simplified process, and capable of conducting a large current; and a fabrication method for such a power module.

Abstract: A packaged semiconductor device with a particle roughened surface on a portion of the lead frame that improves adhesion between the molding compound and the lead frame. A packaged semiconductor device with a particle roughened surface on a portion of the lead frame that improves adhesion between the molding compound and the lead frame and with a reflow wall that surrounds a portion of the solder joint that couples the semiconductor device to the lead frame. A packaged semiconductor device with a reflow wall that surrounds a portion of a solder joint that couples a semiconductor device to a lead frame.

Abstract: Embodiments of the invention include a microelectronic device and methods for forming a microelectronic device. In an embodiment, the microelectronic device includes a semiconductor die that has one or more die contacts that are each electrically coupled to a contact pad by a conductive trace. The semiconductor die may have a first elastic modulus. The microelectronic device may also include an encapsulation layer over the semiconductor die and the conductive trace. The encapsulation layer may have a second elastic modulus that is less than the first elastic modulus. The microelectronic device may also include a first strain redistribution layer within the encapsulation layer. The first strain redistribution layer may have a footprint that covers the semiconductor die and a portion of the conductive traces. The strain redistribution layer may have a third elastic modulus that is less than the first elastic modulus and greater than the second elastic modulus.

Abstract: A semiconductor memory device includes a peripheral circuit region including a first substrate, a peripheral circuit element disposed at least partially over the first substrate, a first dielectric layer covering the peripheral circuit element and a bottom wiring line disposed in the first dielectric layer and electrically coupled to the peripheral circuit element; a cell region including a second substrate disposed over the first dielectric layer, a memory cell array disposed over the second substrate; a second dielectric layer covering the memory cell array; a contact coupled to the bottom wiring line by passing through the second dielectric layer and the first dielectric layer in a first direction perpendicular to a top surface of the second substrate; and at least one dummy contact disposed adjacent to the contact in the second dielectric layer.

Abstract: A semiconductor light emitting device includes a semiconductor light source, a resin package surrounding the semiconductor light source, and a lead fixed to the resin package. The lead is provided with a die bonding pad for bonding the semiconductor light source, and with an exposed surface opposite to the die bonding pad. The exposed surface is surrounded by the resin package in the in-plane direction of the exposed surface.

Abstract: A packaged multichip isolation device includes leadframe including a first and second die pad, with a first and second lead extending outside a molded body having a downward extending lead bend near their outer ends. A first integrated circuit (IC) die on the first die pad has a first bond pad connected to the first lead that realizes a transmitter or receiver. A second IC die on the second die pad has a second bond pad connected to the second lead that realizes another of the transmitter and receiver. An isolation component is in a signal path of the isolation device including a capacitive isolator, or inductors for transformer isolation on or between the die. A midpoint of the thickness of the die pad is raised above a top level of the leads and in an opposite vertical direction relative to the downward extending bend of the external leads.

Abstract: In a method for fabricating semiconductor devices a leadframe pattern is formed from a flat tape of base metal. A plurality of additional metal layers is plated on the patterned tape of base metal. The surface of the metal layers is roughed. A plurality of sites for assembling semiconductor chips are created. The sites alternate with zones for connecting the leadframe pattern to molding compound runners A selected first set of leadframe areas are selectively planished creating flattened areas offsetting a second set of leadframe areas. A semiconductor chip is attached to each site.

Abstract: A semiconductor part includes a resin package and an exposed portion exposed from a bottom surface of the resin package. The exposed portion has a first diagonal line perpendicular to both first and third sides of the package as viewed from the bottom surface. The exposed portion also has a second diagonal line perpendicular to both the second fourth side in the bottom view. A first lead terminal portion opposes the exposed portion and has a first shape in the bottom view. A second lead terminal portion, also opposing the exposed portion, has a second shape in the bottom view. A third lead terminal portion opposing the exposed portion, also has the second shape in the bottom view. A fourth lead terminal portion, similarly opposed to the exposed portion, likewise has the second shape in the bottom view.

Abstract: A molded semiconductor package includes a mold compound having opposing first and second main surfaces and an edge extending between the first and second main surfaces. A semiconductor die is embedded in the mold compound. A plurality of metal pads embedded in the mold compound are electrically connected to the semiconductor die. The metal pads have a bottom face which is uncovered by the mold compound at the second main surface of the mold compound. The metal pads disposed around a periphery of the molded package have a side face which is uncovered by the mold compound at the edge of the mold compound. The faces of the metal pads uncovered by the mold compound are plated. The side face of each metal pad disposed around the periphery of the molded package is recessed inward from the edge of the mold compound. A corresponding manufacturing method is also described.

Abstract: Semiconductor dies with recesses, associated leadframes, and associated systems and methods are disclosed. A semiconductor system in accordance with one embodiment includes a semiconductor die having a first surface and a second surface facing opposite from the first surface, with the first surface having a die recess. The system can further include a support paddle carrying the semiconductor die, with at least part of the support paddle being received in the die recess. In particular embodiments, the support paddle can form a portion of a leadframe. In other particular embodiments, the support paddle can include a paddle surface that faces toward the semiconductor die and has an opening extending through the paddle surface and through the support paddle.

Abstract: A leadframe of a semiconductor device includes a die pad, first and second suspension leads, and a frame. The main surfaces of the die pad and the frame are located on different planes, and the die pad and the frame are connected to each other by the first and second suspension leads. A first boundary line between the first suspension lead and the die pad runs on a straight line different from a second boundary line between the second suspension lead and the die pad. A third boundary line between the first suspension lead and the frame runs on a straight line different from a fourth boundary line between the second suspension lead and the frame.

Abstract: Semiconductor devices may include a substrate and a semiconductor die on the substrate. The semiconductor die may include an active surface and a lateral edge at a periphery of the active surface. An electrically insulating material may be located on the active surface proximate the lateral edge. The electrically insulating material may be distinct from any other material located on the active surface. A wire bond may extend from the active surface, over the electrically insulating material, to the substrate. Methods of making semiconductor devices may involve positioning an electrically insulating material on an active surface of a semiconductor die proximate a lateral edge at a periphery of an active surface. After positioning the electrically insulating material on the active surface, a wire bond extending from the active surface, over the electrically insulating material, to the substrate may be formed.

Abstract: An electronic package is provided. An electronic component and a plurality of conductive pillars are provided on a carrier structure. An encapsulation layer encapsulates the electronic component and the conductive pillars. Each of the conductive pillars has a peripheral surface narrower than two end surfaces of the conductive pillar. Therefore, the encapsulation layer is better bonded to the conductive pillars. A method for fabricating the electronic package is also provided.

Abstract: A packaged microelectronic component includes a substrate and a semiconductor die coupled to a top surface of the substrate. A method of attaching the packaged microelectronic component to a secondary structure entails applying a metal particle-containing material to at least one of a bottom surface of the substrate and a mounting surface of the secondary structure. The packaged microelectronic component and the secondary structure are arranged in a stacked relationship with the metal particle-containing material disposed between the bottom surface and the mounting surface. A low temperature sintering process is performed at a maximum process temperature less than a melt point of the metal particles to transform the metal particle-containing material into a sintered bond layer joining the packaged microelectronic component and the secondary structure. In an embodiment, the substrate may be a heat sink for the packaged microelectronic component and the secondary structure may be a printed circuit board.

Abstract: A fan-out semiconductor package includes: a semiconductor chip; a first connection member including a plurality of redistribution layers and one or more layer of vias; an encapsulant; and a second connection member, wherein the encapsulant has first openings exposing at least portions of the first connection member, the first connection member has second openings exposing at least portions of a redistribution layer disposed at an uppermost portion among the plurality of redistribution layers, at least portions of the first openings and the second openings overlap each other, and a content of a metal constituting the plurality of redistribution layers and the one or more layer of vias is higher in a lower portion of the first connection member than in an upper portion of the first connection member.

Abstract: A semiconductor module that restrains the occurrence of detachment and an operation failure. The semiconductor module includes a PCB base, a conductive die pad provided on the PCB base, a semiconductor die provided on the conductive die pad, and a conductive die bonding agent that electrically connects the conductive die pad and the semiconductor die. The semiconductor module further includes a wire bonding pad provided on the PCB base, a wire that electrically connects the wire bonding pad and the semiconductor die, and a sealing resin that seals the conductive die pad, the semiconductor die, the conductive die bonding agent, the wire bonding pad, and the wire. In a planar view, the area of the conductive die pad is 5.0 mm2 or less.

Abstract: The present invention provides a method and a structure of electrical component assembly on flexible materials. In an exemplary embodiment, the method and the structure include patterning metal on a tape, creating one or more holes in the tape, attaching one or more electronic devices to the tape in the one or more holes such that a profile of the tape and the one or more electronic devices is less than a threshold, electrically connecting the one or more electronic devices to the patterned metal, cutting the tape, resulting in one or more component portions of the tape and one or more excess portions of the tape, where the one or more component portions comprises at least one of the one or more electronic devices, attached to the patterned metal, and bonding the one or more component portions to a ribbon.

Abstract: Embodiments of wearable electronic devices, components thereof, and related systems and techniques are disclosed herein. For example, a wearable electronic device may include a wearable support structure having a first surface and a second surface; a first electrode located at the first surface, wherein, when the wearable electronic device is worn by a user on a portion of the user's body, the first electrode is arranged to contact the user's skin in the portion of the user's body; a second electrode located at the second surface, wherein, when the wearable electronic device is worn by a user on the portion of the user's body, the second electrode is arranged to not contact the user's skin in the portion of the user's body; and a resistance switch having first and second input terminals coupled to the first and second electrodes, respectively. Other embodiments may be disclosed and/or claimed.

Abstract: A lead frame includes a frame part, a lead extending inward from the frame part and having a front surface and a back surface, and an external connection terminal formed at a part of the lead in an extension direction and protruding from the back surface of the lead. The lead includes a pentagonal shape in a cross-section where the front surface of the lead faces upward, the pentagonal shape having a quadrangular main body part and a triangular protrusion protruding from a lower surface of the main body part. A width of a lower end of the main body part is smaller than a width of an upper end of the main body part.

Abstract: A semiconductor device includes a semiconductor chip and a plurality of leads. The leads include a first lead including a supporting portion for mounting the semiconductor chip, and a projecting portion which projects in a first direction from the supporting portion. A second lead extends in a second direction non-parallel with the first direction, and one or more third leads extends in the second direction, such that a line extending in a third direction perpendicular to the first direction passes through the second lead and the one or more third leads. The second lead includes a first portion and a second portion, the first portion having a width larger than the second portion, the first portion having one side parallel to the first direction, and the first portion located between the second portion and the first lead.

Abstract: A semiconductor device includes an insulating substrate, a semiconductor element provided on the insulating substrate, a case frame, a press-fit terminal, and a sealing member provided on an inner side of an inner wall part on the insulating substrate to seal the semiconductor element. The case frame is made of an insulating material and includes an outer wall part, an inner wall part, a recess bottom surface forming a recess together with the outer wall part and the inner wall part. The press-fit terminal includes a base part, a body part, and a press-in portion. The base part is embedded in the recess bottom surface and the body part stands upright from the recess bottom surface such that the body part extends between the inner wall part and the outer wall part, and the press-in portion protrudes up out of the recess.

Abstract: A side view type surface mounted light-emitting device includes a submount substrate that includes a mounting surface on one side surface and end through-holes formed at both edges of the mounting surface, a light-emitting element mounted on the submount substrate, first and second flat terminals formed on the mounting surface, and first and second through-hole terminals respectively formed on inner surfaces of the end through-holes at both edges of the mounting surface. At least one of the first flat terminal and the first through-hole terminal is electrically connected to one of n-side and p-side electrodes of the light-emitting element, and at least one of the second flat terminal and the second through-hole terminal is electrically connected to the other of the n-side and p-side electrodes of the light-emitting element.

Abstract: Provided is a manufacturing method for a semiconductor device using stamping press working which is capable of securing an island having substantially the same size as that of a related art even when a lead frame thickness is increased. A portion between the island and the inner lead is punched with a punch having a width of equal to or larger than a minimum required plate thickness for stamping press working. A periphery of the island is squeezed from an island back surface. A gap between the island and the inner lead is set to be smaller than a thickness of the lead frame, and at the same time, the thickness of the lead frame in the periphery of the island is set smaller than an original plate thickness of the lead frame, thereby obtaining a required area of the island.

Abstract: A fan-out semiconductor package includes a core member having a through-hole. A semiconductor chip is in the through-hole and has an active surface with connection pads and an inactive surface opposing the active surface. An encapsulant encapsulates at least portions of the core member and the semiconductor chip and fills at least a portion of the through-hole. A connection member is on the core member and the active surface of the semiconductor chip and includes a redistribution layer electrically connected to the connection pads. The core member includes a groove portion penetrating from a wall of the through-hole up to an outer side surface of the core member in a lower portion of the core member on which the connection member is disposed.

Abstract: A semiconductor device includes a semiconductor chip with bonding pads, the bonding pads being arranged along one side of an element forming surface of the semiconductor chip, a lead frame including first and second internal leads arranged such that tips thereof correspond to some of the bonding pads of the semiconductor chip, and first and second bonding wires by which the first internal leads and the some of the bonding pads are bonded to each other. The semiconductor device further includes a hanging pin section provided on the element non-forming surface of the semiconductor chip, and a sealing member with which the semiconductor chip is sealed including the hanging pin section and a bonding section between the first and second internal leads and the first and second bonding wires.

Abstract: In one embodiment a device may include an electrical assembly having at least one electrical component; an inner shell comprising a first polymeric material conformally disposed around the electrical component, the inner shell comprising a first mechanical strength; and an outer shell comprising a second polymeric material conformally disposed around the inner shell, the outer shell comprising a second mechanical strength greater than the first mechanical strength, wherein the electrical component comprises a first coefficient of thermal expansion (CTE), the inner shell comprises a second CTE, and the outer shell comprises a third CTE, and wherein a difference between the first CTE and second CTE is less than a difference between the first CTE and third CTE.

Abstract: Embodiments of the present invention are directed to a method of manufacturing a semiconductor package with an internal routing circuit. The internal routing circuit is formed from multiple leadframe routing layers in a plated and etched copper terminal semiconductor package by removing unwanted areas of each leadframe to create conductive paths on an associated leadframe layer of the semiconductor package.

Abstract: In a general aspect, a semiconductor device package assembly can include a first leadframe portion. The first leadframe portion can have a recessed region defined therein. The recessed region can have a sidewall and a bottom. The assembly can also include a second leadframe portion that is press-fit into the recessed region, such that a bottom surface of the second leadframe portion is in contact with the bottom of the recessed region. The second leadframe portion can be retained in the recessed region by mechanical force between an outer surface of the second leadframe portion and an inner surface of the sidewall, where the outer surface of the second leadframe portion can be in contact with the inner surface of the sidewall.

Abstract: The resin-encapsulated semiconductor device includes a bump electrode (2) formed on an element surface side of a semiconductor chip (1), a conductive layer (3) electrically connected to the bump electrode (2), and a resin encapsulation body (6) covering the semiconductor chip (1), the bump electrode (2), and the conductive layer (3). On a back surface of the semiconductor chip (1) that is flush with a back surface of the resin encapsulation body (6), a metal layer (4) and a laminated film (5) are formed. The laminated film (5) is formed on a front surface of the conductive layer (3). The external terminal (9) is arranged on an inner side of an outer edge of the semiconductor chip (1).

Abstract: Embodiments of the present disclosure are directed to leadframes having the cantilevered extension that includes an integral support on the end of the lead nearest the die pad. A support integral to the leadframe allows the support to be built to the proper height to support the cantilevered lead in each package and reduces or eliminates the upward, downward, and side to side deflections caused or allowed by supports built-in to the tooling of the manufacturing equipment. Also, by building the support into the leadframe, the leadframes may be pretaped prior to the die attach and wire bonding steps of the manufacturing process.

Abstract: A semiconductor apparatus includes: a case made of resin; an insert terminal including an external terminal portion embedded in the case and having a first terminal exposed from the case, and an internal terminal portion bent in a L shape with respect to a second terminal of the external terminal portion and having a first surface exposed from the case and an anchor part in close contact with the case; and a bonding wire bonded to the first surface of the internal terminal portion.

Abstract: The present invention presents a printed circuit board heat dissipation system using a highly conductive heat dissipation pad, the heat dissipation system comprising: one or more electronic components mounted on a printed circuit board; the printed circuit board having formed thereon a conductive pattern providing current paths between the mounted one or more electronic components; and a highly conductive heat dissipation pad discharging heat generated due to the current flowing in the conductive pattern of the printed circuit board.

Abstract: A semiconductor light-emitting device includes a lead frame, a semiconductor light-emitting element mounted on the top surface of the bonding region, and a case covering part of the lead frame. The bottom surface of the bonding region is exposed to the outside of the case. The lead frame includes a thin extension extending from the bonding region and having a top surface which is flush with the top surface of the bonding region. The thin extension has a bottom surface which is offset from the bottom surface of the bonding region toward the top surface of the bonding region.

Abstract: A semiconductor device includes an assembly configured such that a plurality of semiconductor modules is connected by a component. Each of the plurality of semiconductor modules includes a semiconductor element including a front-surface electrode fixing a front-surface electrode plate and a back-surface electrode fixing a back-surface electrode plate, wherein the component is either of a first component and a second component. The first component being configured to connect adjacent semiconductor modules to each other such that a front-surface electrode plate of one of the adjacent semiconductor modules is connected to a back-surface electrode plate of the other one of the adjacent semiconductor modules. The second component is configured to connect adjacent semiconductor modules such that respective front-surface electrode plates are connected and respective back-surface electrode plates are connected. The semiconductor modules are connected by the first component or the second component.

Abstract: A method for producing wafer level packaging using an embedded leadframe strip and the resulting device are provided. Embodiments include placing dies into a mold with an active side of each die facing a surface of the mold; placing a leadframe strip on the mold, wherein the leadframe strip includes etched and half etched portions positioned between each die; placing a mold cover over the mold and dies; and adding mold compound in spaces between the dies and mold cover.

Abstract: A semiconductor device includes housing, a substrate, a first semiconductor die, a second semiconductor die, a first terminal, and a second terminal. The first terminal in a first terminal plane couples to the first semiconductor die. The second terminal has a contact portion in a contact portion plane within the housing that couples to the second semiconductor die, a main portion in a main portion plane partially within the housing, the main portion plane substantially parallel to and offset from the first terminal plane, and the main portion plane substantially parallel to and offset from the contact portion plane, and an offsetting portion within the housing and that connects the contact portion to the main portion. At least some of the main portion of the second terminal overlaps the first terminal and the first terminal and the main portion of the second terminal extend from the housing in a same direction.

Abstract: A molded interconnect device adapted to form a three-dimensional circuit by using laser beams includes: a main body on which the three-dimensional circuit is formed; and a lead portion connected to an external electrode of an external substrate by solder and extending from the main body. The lead portion includes: a lead main body molded from a material same as a material of the main body; and a metal film formed on at least a part of an outer periphery of the lead main body.

Abstract: Provided is an electronic component including a pad region including a plurality of pads extending along corresponding extension lines and arranged in a first direction, and a signal wire configured to receive a driving signal from the pad region, wherein the plurality of pads include a plurality of first pads arranged continuously and a plurality of second pads arranged continuously, and extension lines of the plurality of first pads substantially converge into a first point and extension lines of the plurality of second pads substantially converge into a second point different from the first point.

Abstract: An optical sensor including a substrate and a plurality of pixel units are provided. The pixel units are disposed on the substrate, and each of the pixel units includes a light source element, a light sensor element, a circuit unit, and an isolation element. Herein, the light source element emits light, the light sensor element senses an optical image. The circuit unit is configured to drive the light source element to emit light and to drive the light sensor element to sense the optical image. The isolation element isolates the light sensor element from the light source element. In addition, the light source element is disposed between the isolation element of the respective pixel unit and an isolation element of a neighboring pixel unit.

Abstract: A signal transmission apparatus includes: a first lead frame; a second lead frame spaced from the first lead frame; a primary semiconductor chip electrically connected to the first lead frame; a secondary semiconductor chip electrically connected to the second lead frame; and a signal isolator through which a signal is isolatedly transmitted from the primary semiconductor chip to the secondary semiconductor chip, the signal isolator having a first main surface that is bonded to both the first lead frame and the second lead frame.

Abstract: A component assembly is disclosed. In an embodiment the assembly includes a carrier, a metallic structure arranged on the carrier, wherein the metallic structure comprises at least one cavity and an electrical component arranged at least in part in the cavity, wherein the metallic structure comprises at least two part regions which are not connected to each other by any further part of the metallic structure, and wherein the cavity is located between the two part regions. The assembly further includes two contact areas located on the carrier, wherein the component is located on the two contact areas such that each part region of the two part regions is located on one of the two contact areas.

Abstract: Embodiments of the present invention are directed to a method of manufacturing a semiconductor package with an internal routing circuit. The internal routing circuit is formed from multiple leadframe routing layers in a plated and etched copper terminal semiconductor package by removing unwanted areas of each leadframe to create conductive paths on an associated leadframe layer of the semiconductor package.

Abstract: Apparatus for performing dicing of die on wafer interposers. Apparatuses are disclosed for use with the methods of dicing an interposer having integrated circuit dies mounted thereon. An apparatus includes a wafer carrier mounted in a frame and having a size corresponding to a silicon interposer, a fixture mounted to the wafer carrier and comprising a layer of material to provide mechanical support to the die side of the silicon interposer, the fixture being patterned to fill spaces between integrated circuit dies mounted on an interposer; and an adhesive tape disposed on a surface of the fixture for adhering to the surface of a silicon interposer. Additional alternative apparatuses are disclosed.

Abstract: Electronic packages are formed from a generally planar leadframe having a plurality of leads coupled to a GaN-based semiconductor device, and are encased in an encapsulant. The plurality of leads are interdigitated and are at different voltage potentials.

Abstract: Embodiments of the present invention relate to a semiconductor package that includes a locking feature. The locking feature is provided by an unnatural surface roughness of a first molding compound to increase adhesion with a second molding compound. Surfaces of first molding compound are roughened by an abrasion process such that the surfaces are rougher than a natural surface roughness. The roughened surfaces of the first molding compound provide better adhesion of the second molding compound to the roughened surfaces than to untreated surfaces (e.g., surfaces with the natural surface roughness).

Abstract: A leadless package semiconductor device has a top surface, a bottom surface opposite to the top surface, and multiple sidewalls between the top and bottom surfaces. At least one connection pad is disposed on the bottom surface. The connection pad includes a connection portion and at least one protrusion portion that extends from the connection portion and away from the bottom surface such that the protrusion portion and the connection portion surround a space on the bottom surface.

Abstract: A semiconductor device includes a semiconductor die having a first side having a first terminal and an opposite second side having at least two second terminals. A lead frame has a first part and a second part. The second part of the lead frame is both electrically and mechanically spaced from the first part. The second side of the die is attached to the lead frame such that the first and second lead frame parts are respectively connected to the at least two second terminals. The first and second lead frame parts include respective first and second extensions that project past a side of the die and provide first and second terminal surfaces that are co-planar with the first terminal on the first side of the die. The device makes use of the terminals on the both sides of the die. The device second side is exposed for thermal performance.

Abstract: Various embodiments disclosed relate to a circuit. The circuit includes a transceiver adapted to generate a signal. A stranded transmission line is connected to the transceiver. The signal is then transmitted through the first pair of conductive strands.