Abstract: A chip package assembly and method for fabricating the same are provided which utilize a plurality of electrically floating heat transfer structures for improved thermal management. In one example, a chip package assembly is provided. The chip package assembly includes a substrate, a first integrated circuit (IC) die and a plurality of electrically floating conductive heat transfer structures. The substrate has a first surface and an opposing second surface. The first IC die has a first surface, an opposing second surface, and four lateral sides. The second surface of the first IC die is mounted to the first surface of the substrate. The plurality of electrically floating conductive heat transfer structures extend in a first direction defined between the first and second surfaces of the first IC die.

Abstract: Semiconductor device packages may include a die-attach pad and a semiconductor die supported above the die-attach pad. A spacer comprising an electrically conductive material may be supported above the semiconductor die or between the semiconductor die and the die-attach pad. A wire bond may extend from a bond pad on an active surface of the semiconductor die to the spacer. Another wire bond may extend from the spacer to a lead finger or the die-attach pad. An encapsulant material may encapsulate the semiconductor die, the spacer, the wire bond, the other wire bond, the die-attach pad, and a portion of any lead fingers.

Abstract: A semiconductor device includes a predetermined number of leads, a semiconductor element electrically connected to the leads and supported by one of the leads, and a sealing resin that covers the semiconductor element and a part of each lead. Each lead includes some portions exposed from the sealing resin. A surface plating layer is formed on at least one of the exposed portions of the respective leads.

Abstract: Embodiments of the present disclosure are directed towards techniques and configurations for layered interconnect structures for bridge interconnection in integrated circuit assemblies. In one embodiment, an apparatus may include a substrate and a bridge embedded in the substrate. The bridge may be configured to route electrical signals between two dies. An interconnect structure, electrically coupled with the bridge, may include a via structure including a first conductive material, a barrier layer including a second conductive material disposed on the via structure, and a solderable material including a third conductive material disposed on the barrier layer. The first conductive material, the second conductive material, and the third conductive material may have different chemical composition. Other embodiments may be described and/or claimed.

Abstract: A communication method and a system for converging a 5th-generation (5G) communication system for supporting higher data rates beyond a 4th-generation (4G) system with a technology for Internet of things (IoT) are provided. The disclosure may be applied to intelligent services based on the 5G communication technology and the IoT-related technology, such as a smart home, a smart building, a smart city, a smart car, a connected car, health care, digital education, a smart retail, security and safety services. The disclosure provides a method and an apparatus for efficient transmission and reception of control information in a sidelink communication.

Abstract: Semiconductor chip package device and semiconductor chip package method are provided. The semiconductor chip package device includes: a lead frame, chips, an encapsulating layer, and an electroplating layer. The lead frame includes a first surface, a second surface, first grooves, second grooves, and third grooves. The first grooves are connected to the second grooves to form through holes and the third grooves disposed at ends of the lead frame. The chips are electrically connected to the lead frame. The encapsulating layer is formed by using an encapsulating material to encapsulate the chips and at least a portion of the lead frame. The first grooves are filled with the encapsulating material. The electroplating layer is disposed on the second surface of the lead frame, and extends into the third grooves or into the third grooves and the second grooves.

Abstract: A semiconductor device includes a substrate, an IC die mounted on the substrate, packaging encapsulant on the substrate, a cavity in the packaging encapsulant, a conductive lid attached to the packaging encapsulant over the IC die, an electrical ground path in the substrate, and a first conductive structure in the cavity. The first conductive structure includes a first end electrically coupled to the conductive lid and a second end electrically coupled to the electrical ground path.

Abstract: In one example, a semiconductor device structure relates to an electronic device, which includes a device top surface, a device bottom surface opposite to the device top surface, device side surfaces extending between the device top surface and the device bottom surface, and pads disposed over the device top surface. Interconnects are connected to the pads, and the interconnects first regions that each extend from a respective pad in in an upward direction, and second regions each connected to a respective first region, wherein each second region extends from the respective first region in a lateral direction. The interconnects comprise a redistribution pattern on the pads. Other examples and related methods are also disclosed herein.

Abstract: This accelerometer (100) includes a substrate (30) and a bonding member (90) that bonds the substrate (30) and a supporting member (50) to each other, and the bonding member (90) is arranged in a region (R3) that straddles a first region (R1) in which a first sensor element (11) is arranged and a second region (R2) in which a second sensor element (12) is arranged in a plan view.

Abstract: The present disclosure relates to a radio frequency device that includes a device region with a back-end-of-line (BEOL) portion and a front-end-of-line (FEOL) portion, first bump structures, a first mold compound, and a second mold compound. The FEOL portion includes an active layer, a contact layer, and isolation sections. Herein, the active layer and the isolation sections reside over the contact layer, and the active layer is surrounded by the isolation sections. The BEOL portion is formed underneath the FEOL portion, and the first bump structures and the first mold compound are formed underneath the BEOL portion. Each first bump structure is partially encapsulated by the first mold compound, and electrically coupled to the FEOL portion via connecting layers within the BEOL portion. The second mold compound resides over the active layer without a silicon material, which has a resistivity between 5 Ohm-cm and 30000 Ohm-cm, in between.

Abstract: A base material includes one surface, and a side surface continuous with the one surface. Each of the one surface and the side surface has a sealed region to be sealed with mold resin. The one surface has a one surface rough region in the sealed region thereof. The side surface has a side surface rough region in the sealed region thereof.

Abstract: An electronic device and method is disclosed. In one example, the electronic device includes a semiconductor chip and a leadframe. The leadframe includes a first class of leads and a second class of leads. The leads of the second class of leads are thinner than leads of the first class of leads.

Abstract: A lead frame (4) includes an inner lead (5), an outer lead (2) connected to the inner lead (5), and a power die pad (7). A power semiconductor device (9) is bonded onto the power die pad (7). A first metal thin line (11) electrically connects the inner lead (5) and the power semiconductor device (9). Sealing resin (1) seals the inner lead (5), the power die pad (7), the power semiconductor device (9), and the first metal thin line (11). The sealing resin (1) includes an insulating section (15) directly beneath the power die pad (7). A thickness of the insulating section (15) is 1 to 4 times a maximum particle diameter of inorganic particles in the sealing resin (1). A first hollow (14) is provided on an upper surface of the sealing resin (1) directly above the power die pad (7) in a region without the first metal thin line (11) and the power semiconductor device (9).

Abstract: A method of forming an integrated circuit includes generating, by a processor, a layout design of the integrated circuit based on a set of design rules and manufacturing the integrated circuit based on the layout design. The generating of the layout design includes generating a set of active region layout patterns extending in a first direction, generating a set of gate layout patterns extending in a second direction, and generating a cut feature layout pattern extending in the first direction, overlapping at least a first gate layout pattern of the set of gate layout patterns, being separated from the set of active region layout patterns in the second direction by at least a first distance. The first distance satisfying a first design rule of the set of design rules.

Abstract: A semiconductor chip (6) is disposed on the insulation substrate (2). A lead frame (8) is bonded to an upper surface of the semiconductor chip (6). A sealing resin (12) covers the semiconductor chip (6), the insulation substrate (2), and the lead frame (8). A stress mitigation resin (13) having a lower elastic modulus than that of the sealing resin (12) is partially applied to an end of the lead frame (8).

Abstract: In one general aspect, an apparatus can include a semiconductor die, a substrate, and a leadframe coupled to the substrate and defining an opening. The apparatus can include a one-body clip having a first portion disposed within the opening and coupled to the semiconductor die. The one-body clip can have a second portion disposed within the same opening and coupled to the substrate.

Abstract: A power semiconductor device is such that a notch provided, along a longitudinal end face of an inner lead, in a region of a lead frame to which the inner lead is bonded. A resistor is disposed, adjacent to the inner lead, on the same side as the notch with respect to the inner lead, and a distance between the inner lead and the notch is set to be smaller than a distance between the inner lead and the resistor, and thereby the inner lead, even when shifted in position, comes into no contact with the resistor. Because of this, it is no more necessary that a space be provided around the inner lead taking into consideration a positional shift of the inner lead, and it is possible to secure the heat release area of power semiconductor chips accordingly, and thus to obtain the small-sized and high-powered power semiconductor device.

Abstract: A semiconductor package structure includes a molding compound, a micro pin extending through the molding compound, and a die surrounded by the molding compound. The micro pin has a top surface, a bottom surface, and a sidewall extending from the bottom surface to the top surface of the micro pin. The sidewall of the micro pin has a first portion and a second portion. The first portion of the sidewall is adjacent to the bottom surface of the micro pin and free of the molding compound. The second portion of the sidewall is adjacent to the top surface of the micro pin and in contact with the molding compound.

Abstract: A semiconductor light-emitting device includes a lead frame, a semiconductor light-emitting element mounted on the top surface of the bonding region, and a case covering part of the lead frame. The bottom surface of the bonding region is exposed to the outside of the case. The lead frame includes a thin extension extending from the bonding region and having a top surface which is flush with the top surface of the bonding region. The thin extension has a bottom surface which is offset from the bottom surface of the bonding region toward the top surface of the bonding region.

Abstract: A circuit device includes a first conductive plate and a second conductive plate each having a belt-shaped portion arranged side-by-side with each other, a third conductive plate having a belt-shaped portion is arranged side-by-side with and spaced apart from the other side portion of the first conductive plate, a first circuit component having a first terminal connected to the first conductive plate and a second terminal connected to the second conductive plate, a second circuit component having a first terminal connected to the first conductive plate and a second terminal connected to the third conductive plate, a first external connection portion provided at the belt-shaped portion of the first conductive plate, and a second external connection portion provided at the belt-shaped portion of the second conductive plate or a third external connection portion provided at the belt-shaped portion of the third conductive plate.

Abstract: A package and a corresponding method are described. The method includes: providing a processed first wafer having front and back sides and including power semiconductor dies implemented within the wafer by processing its front side, each die having a first load terminal at the front side and a second load terminal at the back side; providing an unprocessed second wafer made of an electrically insulating material and having first and second opposing sides; forming a plurality of recesses within the second wafer; filling the plurality of recesses with a conductive material; forming a stack by attaching, prior or subsequent to filling the recesses, the second wafer to the front side of the first wafer, the conductive material electrically contacting the first load terminals of the power semiconductor dies; and ensuring that the conductive material provides an electrical connection between the first side and the second side of the second wafer.

Abstract: A structure for delivering power is described. In some embodiments, the structure can include conductors disposed on two or more layers. Specifically, the structure can include a first set of interdigitated conductors disposed on a first layer and oriented substantially along an expected direction of current flow. At least one conductor in the first set of interdigitated conductors may be maintained at a first voltage, and at least one conductor in the first set of interdigitated conductors may be maintained at a second voltage, wherein the second voltage is different from the first voltage. The structure may further include a conducting structure disposed on a second layer, wherein the second layer is different from the first layer, and wherein at least one conductor in the conducting structure is maintained at the first voltage.

Abstract: A stacked assembly of semiconductor devices includes a mounting pad covering a first portion of a low-side semiconductor device, and a contact layer covering a second portion of the low-side semiconductor device. A first mounting clip electrically connected to the contact layer has a supporting portion joining the first mounting clip to a first lead frame portion. A second mounting clip attached to the mounting pad has a supporting portion joining the second mounting clip to a second lead frame portion. A high-side semiconductor device has a first terminal electrically connected to the first mounting clip and thereby to the contact layer, and a second terminal electrically connected to the second mounting clip.

Abstract: A current sensor device may include a routable molded lead frame that includes a molded substrate. The current sensor device may include a conductor and a semiconductor chip mounted to the molded substrate. The semiconductor chip may include a magnetic field sensor that is galvanically isolated from the conductor by the molded substrate and is configured to sense a magnetic field created by current flowing through the conductor. The current sensor device may include one or more leads configured to output a signal generated by the semiconductor chip. The one or more leads may be galvanically isolated from the conductor by the molded substrate.

Abstract: An injection moulding apparatus and method for producing a moulded article is disclosed herein. In a described embodiment, the method comprises: (i) securing a layer of film to a part of a first mould half at step 504; (ii) adjusting relative position of the first mould component and a second mould component to an initial moulding position at step 506 to define a mould cavity; (iii) injecting molten moulding material into the mould cavity at step 508 to enable the molten moulding material to contact the layer of protective film; (iv) moving a movable core at step 510 to compress the molten moulding material in the mould cavity; and (v) cooling the compressed molten moulding material at step 514 to bond the layer of film to the cooled moulding material to form the moulded article.

Abstract: A chip-on-film package including a flexible substrate, first test pads, second test pads, first connecting wires, second connecting wires and a chip is provided. The flexible substrate includes at least one segment. Each segment has a central portion and a first side portion and a second side portion located at two opposite sides of the central portion. The chip disposed on the central portion includes first connecting pads and second connecting pads. The first test pads and the second test pads are disposed on the first side portion. Two ends of each of the first connecting wires are connected to the corresponding first connecting pad and the corresponding first test pad. Two ends of each of the second connecting wires are connected to the corresponding second connecting pad and the corresponding second test pad. Each of the second connecting wires includes a first section located at the second side portion.

Abstract: A wiring structure includes at least one upper conductive structure, a lower conductive structure and an intermediate layer. The upper conductive structure includes at least one upper dielectric layer, at least one upper circuit layer in contact with the upper dielectric layer, and at least one bonding portion electrically connected to the upper circuit layer. The lower conductive structure includes at least one lower dielectric layer and at least one lower circuit layer in contact with the lower dielectric layer. The intermediate layer is disposed between the upper conductive structure and the lower conductive structure and bonding the upper conductive structure and the lower conductive structure together. The upper conductive structure is electrically connected to the lower conductive structure.

Abstract: A sensor comprises a housing; and a lead frame comprising at least three elongated leads having an exterior portion extending from the housing; and a magnetic sensor circuit disposed in the housing, and connected to the lead frame. The housing comprises two recesses arranged on two opposite sides of the housing for allowing the sensor to be mounted to a support. The lead frame may further comprise a plurality of tabs disposed between the elongated leads, for use as test pins. A component assembly comprising said sensor mounted on a support between deformable protrusions. A method of making said component assembly, comprising the step of positioning said component on the support between said protrusions, and deforming said protrusions such that they are at least partially disposed within the recesses.

Abstract: Leadframes for semiconductor packages. Implementations may include a plurality of leads extending inwardly into an opening surrounded by the plurality of leads where the plurality of leads except for at least one are configured to mechanically couple at a surface of a semiconductor chip. The at least one of the plurality of leads that is not configured to mechanically coupled at the surface of the semiconductor chip be configured to electrically couple with the semiconductor chip.

Abstract: A semiconductor element includes an element body, a surface protective film and an electrode. The element body has a front surface and a side surface connected to the front surface. The surface protective film is supported on the front surface of the element body. The surface protective film has a cutout portion recessed inward from an outer edge of the surface protective film as viewed in a thickness direction of the element body. The electrode is disposed in the cutout portion and electrically connected to the element body. The element body has a ledge protruding with respect to the side surface in a direction perpendicular to the thickness direction. The ledge is adjacent to an opening of the cutout portion as viewed in the thickness direction.

Abstract: A method of assembling a flip chip on a leadframe package. A locking dual leadframe (LDLF) includes a top metal frame portion including protruding features and a die pad and a bottom metal frame portion having apertures positioned lateral to the die pad. The protruding features and apertures are similarly sized and alignable. A flipped integrated circuit (IC) die having a bottomside and a topside including circuitry connected to bond pads having solder balls on the bond pads is mounted with its topside onto the top metal frame portion. The top metal frame portion is aligned to the bottom metal frame portion so that the protruding features are aligned to the apertures. The bottomside of the IC die is pressed with respect to a top surface of the bottom frame portion, wherein the protruding features penetrate into the apertures.

Abstract: A semiconductor module that restrains the occurrence of detachment and an operation failure. The semiconductor module includes a PCB base, a conductive die pad provided on the PCB base, a semiconductor die provided on the conductive die pad, and a conductive die bonding agent that electrically connects the conductive die pad and the semiconductor die. The semiconductor module further includes a wire bonding pad provided on the PCB base, a wire that electrically connects the wire bonding pad and the semiconductor die, and a sealing resin that seals the conductive die pad, the semiconductor die, the conductive die bonding agent, the wire bonding pad, and the wire. In a planar view, the area of the conductive die pad is 5.0 mm2 or less.

Abstract: A distributed fiber optic communication network for controlling a gas turbine engine includes a computation module and an input/output (I/O) module. The computation module and the I/O module are connected via the communication network. The communication network comprises multi-mode fiber optic cables, wherein data is transferred thereon on multiple frequency bands. The frequency bands range from about 300 nm to about 1550 nm. A method of frequency hopping is provided in which communication band instructions are stored locally on nodes of the communication network and may include communication band instructions transmitted to nodes of the communication network on a dedicated band.

Abstract: A semiconductor device package includes a metal carrier, a passive device, a conductive adhesive material, a dielectric layer and a conductive via. The metal carrier has a first conductive pad and a second conductive pad spaced apart from the first conductive pad. The first conductive pad and the second conductive pad define a space therebetween. The passive device is disposed on top surfaces of first conductive pad and the second conductive pad. The conductive adhesive material electrically connects a first conductive contact and a second conductive contact of the passive device to the first conductive pad and the second conductive pad respectively. The dielectric layer covers the metal carrier and the passive device and exposes a bottom surface of the first conductive pad and the second conductive pad. The conductive via extends within the dielectric layer and is electrically connected to the first conductive pad and/or the second conductive pad.

Abstract: The present disclosure is directed to a lead frame including a die pad with cavities, and methods for attaching a semiconductor die to the lead frame. The cavities allow for additional adhesive to be formed on the die pad at the corners of the semiconductor die, and prevent the additional adhesive from overflowing on to active areas of the semiconductor die.

Abstract: A semiconductor module includes block-shaped first and second lower base members provided by bonding of flat lower surfaces on an insulated circuit board and having bottomed first and second hole portions open in upper surfaces in upper portions of the first and second lower base members, tubular first and second upper slide support members inserted in the first and second hole portions in a state where at least a part of outside surfaces is in contact with inside walls of the first and second hole portions, first and second pins inserted in contact with the insides of the first and second upper slide support members, and a sealing resin sealing the first and second pins except for the upper portions of the first and second pins.

Abstract: A semiconductor device has inner leads (2a) of leads (2) which are covered with a first resin-encapsulating body (4), and has outer leads (2b) which are exposed from the first resin-encapsulating body (4), and which are given a shape bending downward and have distal ends having the bending shape extending in a lateral direction. The inner leads (2a) embedded in the first resin-encapsulating body (4) extend inward, and are then formed into a shape bending downward. Above end portions (3) having the bending shape, an element mounting portion (11) is formed of the first resin-encapsulating body (4), and a semiconductor element (6) placed on the element mounting portion (11) is covered with a second resin-encapsulating body (8).

Abstract: A lead frame strip with corrugated saw street metal where the corrugated saw street metal is comprised of a partial thickness of the lead frame strip metal. A lead frame strip with corrugated saw street metal where the corrugated saw street metal is comprised of a half thickness of the lead frame strip metal.

Abstract: Solid state light emitting devices including light-emitting diodes (LEDs), and more particularly packaged LEDs are disclosed. In some embodiments, an LED package includes electrical connections that are configured to reduce corrosion of metals within the LED package; or decrease the overall forward voltage of the LED package; or provide an electrical path for serially-connected electrostatic discharge (ESD) chips. In some embodiments, an LED package includes at least two LED chips and a material between the two LED chips that promotes homogeneity of composite emissions from the two LED chips. In this manner, LED packages according to the present disclosure may be beneficial for various applications, including those where a high luminous intensity is desired in a variety of environmental conditions. Such applications include automotive lighting, aerospace lighting, and general illumination.

Abstract: The present disclosure provides a semiconductor package structure having a semiconductor die having an active surface, a conductive bump on the active surface, configured to electrically couple the semiconductor die to an external circuit, the conductive bump having a bump height, a dielectric encapsulating the semiconductor die and the conductive bump, and a plurality of fillers in the dielectric, each of the fillers comprising a diameter, wherein a maximum diameter of the fillers is smaller than the bump height.

Abstract: A semiconductor device has a carrier with a fixed size. A plurality of first semiconductor die is singulated from a first semiconductor wafer. The first semiconductor die are disposed over the carrier. The number of first semiconductor die on the carrier is independent from the size and number of first semiconductor die singulated from the first semiconductor wafer. An encapsulant is deposited over and around the first semiconductor die and carrier to form a reconstituted panel. An interconnect structure is formed over the reconstituted panel while leaving the encapsulant devoid of the interconnect structure. The reconstituted panel is singulated through the encapsulant. The first semiconductor die are removed from the carrier. A second semiconductor die with a size different from the size of the first semiconductor die is disposed over the carrier. The fixed size of the carrier is independent of a size of the second semiconductor die.

Abstract: An electronic device includes: an electronic component; and a mounting member on which the electronic component is mounted. A center of gravity of the electronic component is at a position separated from the mounting member. The electronic device further includes: a rigid member having a frame shape, which is fixed to the mounting member and surrounds the electronic component in a direction perpendicular to a direction from the center of gravity of the electronic component to the mounting member; and a connecting member which connects the electronic component to the rigid member on a side opposite to the mounting member with respect to the electronic component.

Abstract: Solid state light emitting devices including light-emitting diodes (LEDs), and more particularly packaged LEDs are disclosed. In some embodiments, an LED package includes electrical connections that are configured to reduce corrosion of metals within the LED package; or decrease the overall forward voltage of the LED package; or provide an electrical path for serially-connected electrostatic discharge (ESD) chips. In some embodiments, an LED package includes at least two LED chips and a material between the two LED chips that promotes homogeneity of composite emissions from the two LED chips. In this manner, LED packages according to the present disclosure may be beneficial for various applications, including those where a high luminous intensity is desired in a variety of environmental conditions. Such applications include automotive lighting, aerospace lighting, and general illumination.

Abstract: A method of fabricating a semiconductor device is provided in which an adhesive layer is disposed on a first surface of a first semiconductor substrate. A carrier substrate is provided on the first surface of the first semiconductor substrate, and the carrier substrate is separated from a surface of the adhesive layer while the adhesive layer is still attached to the first surface of the first semiconductor substrate.

Abstract: A method for manufacturing a semiconductor device includes preparing a lead frame, mounting a semiconductor element on an obverse face of the lead frame, forming a sealing resin covering the semiconductor element, forming a groove on a reverse face of the lead frame, and removing a portion of the lead frame and a portion of the sealing resin along a disposal region that is narrower than the groove and entirely overlaps with the groove. The preparing of the lead frame includes forming at least one recess located in the disposal region and having an end that is open in the thickness direction. The forming of the groove includes exposing the recess on a side of the reverse face of the lead frame. The removing is performed with reference to the recess.

Abstract: A semiconductor device includes: a first semiconductor element including a first signal electrode; a second semiconductor element, laminated on the first semiconductor element, including a second signal electrode; a sealing body; a first signal terminal connected to the first signal electrode; and a second signal terminal connected to the second signal electrode, wherein: the first signal terminal and the second signal terminal project from the sealing body and extend in a first direction; the first signal terminal and the second signal terminal are distanced from each other in a second direction; the first signal electrode and the second signal electrode are placed at different positions in the second direction; the first signal electrode is provided closer to the first signal terminal than to the second signal terminal; and the second signal electrode is provided closer to the second signal terminal than to the first signal terminal.

Abstract: Implementations of semiconductor packages may include a die including a first side and a second side opposing the first side, the second side of the die coupled to a layer, a first end of a plurality of wires each bonded to the first side of the die, a mold compound encapsulating the die and the plurality of wires, and a second end of the plurality of wires each directly bonded to one of a plurality of bumps, wherein a surface of the layer is exposed through the mold compound.

Abstract: A semiconductor device may include a first conductor plate on which a first semiconductor element, a second semiconductor element and a first circuit board are disposed, and a plurality of first signal terminals. A size of the second semiconductor is smaller than a size of the first semiconductor element. In a plan view along a direction perpendicular to the first conductor plate, the plurality of first signal terminals is located in a first direction with respect to the first semiconductor element. The second semiconductor element and the first circuit board are located between the plurality of first signal terminals and the first semiconductor element and are arranged along a second direction that is perpendicular to the first direction. A signal pad of the first semiconductor element is connected to a corresponding one of the plurality of first signal terminals via a signal transmission path of the first circuit board.

Abstract: A terminal 20 includes a terminal connection portion 21 connected to a counterpart terminal and a board connection portion 24 connected to a conductive path 13 of a board 11. The board connection portion 24 has a plate shape portion 25 that is a plate shape. The plate shape portion is disposed behind the terminal connection portion 21 and is soldered to the conductive path 13 of the board 11. The board connection portion has a plate-shape first projection walls 28A to 28D that are bent from edge portions of a lateral direction side of the plate shape portion 25 and that project to an opposite side to the board 11 side. The plate shape portion 25 and the first projection walls 28A to 28D have a plating layer 37 that is formed on a plate surface of the plate shape portion and the first projection walls.

Abstract: A leadframe comprising a plurality of leads, each of the plurality of leads having a proximal end and a distal end opposite the proximal end, the distal ends positioned along a linear axis. The leadframe further comprises a die pad closer to the proximal ends than the distal ends of the plurality of leads and including an edge positioned along a plane that intersects the linear axis at an angle less than 90 degrees.