Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a substrate with a material layer including grooves in a fillet region that are substantially parallel and adjacent an integrated circuit; and forming a resin between the substrate and the integrated circuit that contacts a trench trace exposed by the grooves.

Abstract: A semiconductor device has a first substrate with a plurality of first conductive vias formed partially through the first substrate. A first semiconductor die is mounted over the first substrate and electrically connected to the first conductive vias. A plurality of bumps is formed over the first substrate. A second substrate has a plurality of second conductive vias formed partially through the second substrate. A penetrable encapsulant is deposited over the second substrate. The second substrate is mounted over the first substrate to embed the first semiconductor die and interconnect structure in the penetrable encapsulant. The encapsulant can be injected between the first and second substrates. A portion of the first substrate is removed to expose the first conductive vias. A portion of the second substrate is removed to expose the second conductive vias. A second semiconductor die is mounted over the second substrate.

Abstract: A method of placing a die includes providing an embedded plane. The embedded plane has a openings, grid lines, and protruding portions. Each of the plurality of openings are surrounding by a subset of the plurality of grid lines. At least one of the protruding portions extends into one of the openings. A die is placed into one of the openings and at least one of the protruding portions bends during such placement so that it is in contact with at least a portion of a minor surface of the die.

Abstract: A method of manufacture of an integrated circuit packaging system includes: forming a first level contact on a first external connection level; forming a second level contact on a second external connection level next to the first external connection level; attaching a device adjacent the first level contact and the second level contact; attaching a first level device connector to the first level contact and the device; attaching a second level device connector to the second level contact and the device; and forming an encapsulant over the first level contact, the second level contact, the first level device connector, and the second level device connector.

Abstract: A packaging technique is described for QFNs, DFN, and other surface mount packages that allows the sides of leads to be plated with a wettable metal prior to the lead frames being singulated from the lead frame sheet. The leads of the lead frames in the sheet are shorted together and to the body of the lead frame sheet by a sacrificial interconnect structure. Chips are mounted to the lead frames and encapsulated, leaving the bottoms of the leads exposed. The lead frame sheet is then sawed along boundaries of the lead frames but not sawed through the interconnect structure. The sawing exposes at least a portion of the sides of the leads. The leads are then electroplated while the leads are biased with a bias voltage via the interconnect structure. After the plating, the lead frame sheet is sawed completely thorough the interconnect structure to singulate the lead frames and prevent the interconnect structure from shorting the leads together.

Abstract: A semiconductor device includes a semiconductor element having a main surface where an outside connection terminal pad is provided. The semiconductor element is connected to a conductive layer on a supporting board via a plurality of convex-shaped outside connection terminals provided on the outside connection terminal pad and a connection member; and the connection member commonly covers the convex-shaped outside connection terminals.

Abstract: A semiconductor device has a base carrier with first and second opposing surfaces. A plurality of cavities and base leads between the cavities is formed in the first surface of the base carrier. The first set of base leads can have a different height or similar height as the second set of base leads. A concave capture pad can be formed over the second set of base leads. Alternatively, a plurality of openings can be formed in the base carrier and the semiconductor die mounted to the openings. A semiconductor die is mounted between a first set of the base leads and over a second set of the base leads. An encapsulant is deposited over the die and base carrier. A portion of the second surface of the base carrier is removed to separate the base leads. An interconnect structure is formed over the encapsulant and base leads.

Abstract: A semiconductor device is made by forming a first conductive layer over a temporary carrier. A UBM layer is formed over the temporary carrier and fixed in position relative to the first conductive layer. A conductive pillar is formed over the first conductive layer. A semiconductor die is mounted to the UBM layer to align the die relative to the conductive pillar. An encapsulant is deposited over the die and around the conductive pillar. The UBM layer prevents shifting of the semiconductor die while depositing the encapsulant. The temporary carrier is removed. A first interconnect structure is formed over a first surface of the encapsulant. A second interconnect structure is formed over a second surface of the encapsulant. The first and second interconnect structures are electrically connected through the conductive pillar. The first or second interconnect structure includes an integrated passive device electrically connected to the conductive pillar.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a semiconductor wafer having a chip pad; attaching a wafer frame to the semiconductor wafer, the wafer frame having a horizontal cover integral to a protruding connector with the protruding connector on the chip pad; forming an underfill around the protruding connector and between the horizontal cover and the semiconductor wafer; removing the horizontal cover exposing the underfill and the protruding connector; and singulating an integrated circuit package from the semiconductor wafer.

Abstract: A light-emitting apparatus of the present invention includes: a mounting base 260 which has a wire 265; and a nitride-based semiconductor light-emitting device flip-chip mounted on the mounting base 260. The nitride-based semiconductor light-emitting device 100 includes a GaN-based substrate 10 which has an m-plane surface 12, a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN-based substrate 10, and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes an Mg layer 32. The Mg layer 32 is in contact with the surface of the p-type semiconductor region of the semiconductor multilayer structure 20. The electrode 30 is coupled to the wire 265.

Abstract: A chip scale package structure and a method for fabricating the same are disclosed. The method includes forming metal pads on a predetermined part of a carrier; mounting chips on the carrier, each of the chips having a plurality of conductive bumps soldered to the metal pads; forming an encapsulant on the carrier to encapsulate the chips and the conductive bumps; removing the carrier to expose the metal pads and even the metal pads with a surface of the encapsulant; forming on the encapsulant a plurality of first conductive traces electrically connected to the metal pads; applying a solder mask on the first conductive traces, and forming a plurality of openings on the solder mask to expose a predetermined part of the first conductive traces; forming a plurality of conductive elements on the predetermined part; and cutting the encapsulant to form a plurality of chip scale package structures.

Abstract: Methods are disclosed for improving electrical interconnection in stacked die assemblies, and stacked die assemblies are disclosed having structural features formed by the methods. The resulting stacked die assemblies are characterized by having reduced electrical interconnect failure.

Abstract: A method of fabricating a light emitting device includes forming a plurality of light emitting elements on light emitting element mounting regions, respectively, of a substrate, forming lens supports on the light emitting element mounting regions, respectively, are raised relative to isolation regions of the substrate located between neighboring ones of the light emitting element mounting regions, and forming lenses covering the light emitting elements on the lens support patterns, respectively.

Abstract: A die level integrated interconnect decal manufacturing method and apparatus for implementing the method. In accordance with the technology concerning the soldering of integrated circuits and substrates, and particularly providing for solder decal methods forming and utilization, in the present instance there are employed underfills which consist of a solid film material and which are applied between a semiconductor chip and the substrate in order to enhance the reliability of a flip chip package. In particular, the underfill material increases the resistance to fatigue of controlled collapse chip connect (C4) bumps.

Abstract: A circuit board includes an insulating member and a semiconductor chip encapsulated with the thermoplastic resin portion of the insulating member. A wiring member is located in the insulating member and electrically connected to first and second electrodes on respective sides of the semiconductor chip. The wiring member includes a pad, an interlayer connection member, and a connection portion. A diffusion layer is located between the first electrode and the connection portion between the pad and the connection portion, and between the second electrode and the interlayer connection member. At least one element of the interlayer connection member has a melting point lower than a glass-transition point of the thermoplastic resin portion. The connection portion is made of material having a melting point higher than a melting point of the thermoplastic resin portion.

Abstract: Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.

Abstract: Methods of packaging integrated circuits are described. One method relates to attaching a singulated device wafer to a substrate. The singulated device wafer includes a multiplicity of integrated circuit dice arranged in a first configuration. The method also involves a substrate, which includes a sacrificial semiconductor wafer having device areas with metalized contacts. The device areas on the substrate may be arranged in a configuration matching that of the dice on the device wafer. The method also entails aligning the singulated device wafer as a whole with the substrate so that the dice of the device wafer are positioned substantially simultaneously over associated device areas on the substrate. The method also involves attaching the dice from the singulated wafer as a whole substantially simultaneously to the substrate such that each die of the device wafer is attached to an associated device area of the substrate.

Abstract: A method for filling multi-layer chip-stacked gaps is revealed, primarily comprising the steps as below. Firstly, a chip-stacked assembly is provided, comprising a substrate and a plurality of chips vertically stacked on the substrate where at least a first underfilling gap is formed between each two adjacent ones of the stacked chips with a height difference from the substrate. Then, the chip-stacked assembly is flipped and dipped into an underfilling material where the underfilling material is disposed in a storage tank in a flowing state to completely fill the first underfilling gap. Then, the chip-stacked assembly is taken out. Finally, the chip-stacked assembly is heated to cure the underfilling material filled in the first underfilling gap. Accordingly, multi-layer chip-stacked gaps with different heights can be simultaneously filled at one single step. The conventional underfilling difficulty of multi-layer chip-stacked gaps can be solved leading to higher productivity.

Abstract: A semiconductor device has a flipchip or PoP semiconductor die mounted to a die attach area interior to a substrate. The substrate has a contact pad area around the die attach area and flow control area between the die attach area and contact pad area. A first channel is formed in a surface of the substrate within the flow control area. The first channel extends around a periphery of the die attach area. A first dam material is formed adjacent to the first channel within the flow control area. An underfill material is deposited between the die and substrate. The first channel and first dam material control outward flow of the underfill material to prevent excess underfill material from covering the contact pad area. A second channel can be formed adjacent to the first dam material. A second dam material can be formed adjacent to the first channel.

Abstract: The present invention discloses a method of encapsulating a wafer level microdevice, which includes: fabricating a microdevice on top side of a first silicon wafer; depositing a first capping carbon film on the top side of the first silicon wafer; implementing a backside fabricating process of wafer from bottom side of the first silicon wafer by carrying the top side of the first silicon wafer through the first capping carbon film; removing the first capping carbon film by selective gaseous reaction with carbon; and encapsulating an encapsulation wafer onto the top side of the first silicon wafer. The present invention deposits and removes the first capping carbon film by means of chemical technology, thereby protecting the microdevice on the top side of the first wafer during implementing the backside fabricating process of wafer.

Abstract: This invention relates to a system in package including a plurality of integrated circuit chips and a substrate on which the plurality of integrated circuit chips are mounted and characterized in that a testability circuit for facilitating a test on at least one of the integrated circuit chips is incorporated into the substrate. The testability circuit incorporated into the substrate is formed by embedding a so-called WLCSP integrated circuit chip into the substrate. Alternatively, the testability circuit is formed by using a transistor element formed by using a semiconductor layer formed on the substrate. By incorporating the testability circuit into the substrate as described above, it is possible to realize a system in package facilitated in test without increases in size and cost.

Abstract: In a high frequency flip chip package process of a polymer substrate and a structure thereof, the structure is a one-layer structure packaged by a high frequency flip chip package process to overcome the shortcomings of a conventional two-layer structure packaged by the high frequency flip chip package process. The conventional structure not only incurs additional insertion loss and return loss in its high frequency characteristic, but also brings out a reliability issue. Thus, the manufacturing process of a ceramic substrate in the conventional structure still has the disadvantages of a poor yield rate and a high cost.

Abstract: A semiconductor device has a stress relief buffer mounted to a temporary substrate in locations designated for bump formation. The stress relief buffer can be a multi-layer composite material such as a first compliant layer, a silicon layer formed over the first compliant layer, and a second compliant layer formed over the silicon layer. A semiconductor die is also mounted to the temporary substrate. The stress relief buffer can be thinner than the semiconductor die. An encapsulant is deposited between the semiconductor die and stress relief buffer. The temporary substrate is removed. An interconnect structure is formed over the semiconductor die, encapsulant, and stress relief buffer. The interconnect structure is electrically connected to the semiconductor die. A stiffener layer can be formed over the stress relief buffer and encapsulant. A circuit layer containing active devices, passive devices, conductive layers, and dielectric layers can be formed within the stress relief buffer.

Abstract: An epoxy resin composition for a underfilling of a semiconductor comprising an epoxy resin, an acid anhydride, a curing accelerator and a flux agent as essential components, wherein the curing accelerator is a quaternary phosphonium salt, as well as a semiconductor device and manufacturing method employing the same.

Abstract: The invention relates to a flip-chip module with a semiconductor chip with contact posts, wherein the contact posts are connected electrically and mechanically to a substrate. Provided between the substrate and the semiconductor chip is a spacer, which is coupled mechanically to the substrate and/or the semiconductor chip. By this means, thermal stresses in the flip-chip module are absorbed by the spacer and kept away from the semiconductor chip. The invention also relates to a method for the production of a flip-chip module, in which firstly a spacer is located between the semiconductor chip and the substrate, after which the contact posts are soldered to the contact points of the substrate. Through the provision of the spacer the distance between the semiconductor chip and the substrate is set precisely, thereby improving the quality of the soldering points.

Abstract: An underfill composition is formulated to increase the surface tension thereof for use in capillary underfilling of an integrated circuit die that is coupled to a mounting substrate. A method includes mixing a surface tension-increasing additive with a bulk polymer and a hardener and allowing the underfill composition to flow between the integrated circuit die and the mounting substrate. An article is achieved by the method. The article can be assembled into a computing system.

Abstract: Various semiconductor chips and methods of making the same are disclosed. In one aspect, a method of manufacturing is provided that includes forming a first opening in an insulating layer applied to a side of a semiconductor chip. The first opening does not extend through to the side. A second opening is formed in the insulating layer that exposes a portion of the side.

Abstract: Spreading or keep out zones may be formed in integrated circuit packages by altering the roughness of package surfaces. The surface roughness can be altered by applying or growing particles having a dimension less than 500 nanometers. Hydrophilic surfaces may be made hemi-wicking and hydrophobic surfaces may be made hemi-wicking by particles of the same general characteristics.

Abstract: A wafer level chip scale package system is provided including placing a first integrated circuit over a semiconductor wafer having a second integrated circuit; connecting a second electrical interconnect between the first integrated circuit and the second integrated circuit; forming a stress relieving encapsulant on the outer perimeter of the second integrated circuit for covering the second electrical interconnect; and singulating a chip scale package, from the semiconductor wafer, through the stress relieving encapsulant and the semiconductor wafer.

Abstract: A packaging process of a light emitting diode (LED) is provided. First, an LED chip is bonded with a carrier to electrically connect to each other. After that, the carrier is heated to raise the temperature thereof. Next, an encapsulant is formed on the heated carrier by a dispensing process to encapsulate the LED chip, wherein the viscosity of the encapsulant before contacting the carrier is lower than that of the encapsulant after contacting the carrier. Thereafter, the encapsulant is cured.

Abstract: A method for manufacturing a semiconductor device includes: a) preparing a structure including a semiconductor substrate, an electrode provided on a first surface of the semiconductor substrate, and an insulation film provided on the first surface and having an opening positioned on a first part of the electrode; b) forming a first metal layer from an upper surface of the first part of the electrode to an upper surface of the insulation film; c) forming a resin layer on a first part of the first metal layer, which is positioned on the first part of the electrode, and on the insulation film after the step b); d) removing at least a second part of the resin layer, which is positioned on the first part of the first metal layer, in a manner to leave a first part of the resin layer so as to form a resin protrusion; and e) forming a second metal layer, which is electrically connected with the electrode, from an upper surface of the first metal layer to an upper surface of the resin protrusion.

Abstract: Apparatus and methods for providing a robust solder connection in a flip chip arrangement using lead free solder are disclosed. A copper column extends from an input/output terminal of an integrated circuit. A cap layer of a material comprising one of nickel, nickel alloys, palladium, platinum, cobalt, silver, gold, and alloys of these is formed on the exterior surface of the copper column. A lead free solder connector is disposed on the cap layer. A substrate having a metal finish solder pad is aligned with the solder connector. A thermal reflow is performed. The metal finish may be of nickel, nickel alloy and nickel based materials. Following a thermal reflow, the solder connection formed between the copper terminal column and the metal finish solder pad is less than 0.5 wt. %.

Abstract: A surface preparation method for improved adhesion in an electronic package system. The method of improving adhesion in the electronic package system includes depositing a passivation layer on a bonding surface and roughening at least a portion of the passivation layer. A coating material is deposited on the passivation layer. The bonding surface can be part of a semiconductor or package substrate. The roughening process can be performed by a chemical or mechanical process. In another embodiment, an electronic package system includes a bonding surface of a semiconductor or package substrate. A passivation layer is deposited on the bonding surface and a portion of the passivation layer is roughened for improved adhesion. A coating material is deposited on the roughened portion of the passivation layer.

Abstract: A semiconductor device and a method of manufacturing the same are disclosed. The method is carried out by forming solder pads on a substrate by wet etching, flipping a semiconductor chip having a plurality of connection bumps formed on an active surface of the semiconductor chip for the connection bumps to be mounted by compression on the solder pads of the substrate correspondingly, at a temperature of the compression between the connection bumps and the solder pads lower than the melting points of the solder pads and the connection bumps, so as to allow the semiconductor chip to be engaged with and electrically connected to the substrate through the connection bumps and the solder pads, thereby enhancing the bonding strength of the solder pads and the connection bumps and increasing the fabrication reliability.

Abstract: A method, in which the semiconductor components forming part of an electronic circuit, or at least some of them, are embedded in a base, such as a circuit board, during the manufacture of the base, when part of the base structure is, as it were, manufactured around the semiconductor components. Through-holes for the semiconductor components are made in the base, in such a way that the holes extend between the first and second surface of the base. After the making of the holes, a polymer film is spread over the second surface of the base structure, in such a way that the polymer film also covers the through-holes made for the semiconductor components from the side of the second surface of the base structure. Before the hardening, or after the partial hardening of the polymer film, the semiconductor components are placed in the holes made in the base, from the direction of the first surface of the base.

Abstract: On a semiconductor chip in a semiconductor integrated circuit, a plurality of circuit cells each of which has a pad are formed along a first chip side of the semiconductor chip. Among the plurality of circuit cells, one or more circuit cells at least in the vicinity of an end portion on the first chip side are arranged having a steplike shift in a direction apart from the first chip side with decreasing distance from the center portion to the end portion on the first chip side.

Abstract: A packaging method is disclosed that comprises attaching a plurality of dice, each having a plurality of bonding pads disposed on an active surface, to an adhesive layer on a substrate. A polymer material is formed over at least a portion of both the substrate and the plurality of dice and a molding apparatus is used on the substrate to force the polymer material to substantially fill around the plurality of dice. The molding apparatus is removed to expose a surface of the polymer material and a plurality of cutting streets is formed on an exposed surface of the polymer material. The substrate is removed to expose the active surface of the plurality of dice.

Abstract: A light emitting device having a structure in which oxygen and moisture are prevented from reaching light emitting elements, and a method of manufacturing the same, are provided. Further, the light emitting elements are sealed by using a small number of process steps, without enclosing a drying agent. The present invention has a top surface emission structure. A substrate on which the light emitting elements are formed is bonded to a transparent sealing substrate. The structure is one in which a transparent second sealing material covers the entire surface of a pixel region when bonding the two substrates, and a first sealing material (having a higher viscosity than the second sealing material), which contains a gap material (filler, fine particles, or the like) for protecting a gap between the two substrates, surrounds the pixel region. The two substrates are sealed by the first sealing material and the second sealing material.

Abstract: An integrated circuit package system is provided including providing a carrier, mounting an integrated circuit die on the carrier, connecting the integrated circuit die with the carrier, and forming an encapsulation having a multi-sloped side over the integrated circuit die for reducing ejection stress.

Abstract: A method for manufacturing a semiconductor module, includes the steps of preparing a board; mounting a semiconductor device on the second metal foil; placing a resin case onto the board for surrounding a first metal foil, an insulating sheet, the second metal foil, and the semiconductor device; pouring a resin in a paste form into the case to fill a space relative to the first metal foil, insulating sheet, the second metal foil and the semiconductor device; and heat-curing the resin. A bottom end of a peripheral wall of the case is located above a bottom surface of the first metal. The bottom surface of the first metal foil and the resin form a flat bottom surface to contact an external mounting member.

Abstract: In one embodiment, a method of forming a semiconductor device package includes: (1) providing a carrier and a semiconductor device including an active surface; (2) forming a first redistribution structure including a first electrical interconnect extending laterally within the first structure and a plurality of second electrical interconnects extending vertically from a first surface of the first interconnect, each second interconnect including a lower surface adjacent to the first surface and an upper surface opposite the lower surface; (3) disposing the device on the carrier such that the active surface is adjacent to the carrier; (4) disposing the first structure on the carrier such that the upper surface of each second interconnect is adjacent to the carrier, and the second interconnects are positioned around the device; and (5) forming a second redistribution structure adjacent to the active surface, and including a third electrical interconnect extending laterally within the second structure.

Abstract: A semiconductor device and a fabrication method thereof are provided. A semiconductor device which is packaged as it includes a semiconductor in which an electronic circuit is disposed, the semiconductor device including: a substrate; a semiconductor chip which has a semiconductor main body having the electronic circuit formed thereon, a pad electrode formed on the semiconductor main body and a projected electrode that is connected to the pad electrode and projected from a surface of the semiconductor main body, wherein the semiconductor chip is mounted on the substrate from the back side of the surface to form the projected electrode thereon; and an insulating layer which is formed as the semiconductor chip buried therein and is polished from a top surface of the insulating layer to a height at which a top of the projected electrode is exposed.

Abstract: A semiconductor device is provided comprising: a semiconductor element including a plurality of electrodes; first wirings coupled to the electrodes and directed toward a center of the semiconductor element from a portion coupled to the electrodes; second wirings coupled between the first wirings and external terminals, the second wirings being directed to an outer area of the semiconductor element relative to the center; and at least one resin layer formed between the first wirings and the second wirings.

Abstract: A fabricating process of a chip package structure is provided. First, a first substrate having a plurality of first bonding pads and a second substrate having a plurality of second bonding pads are provided, wherein bumps are formed on the first bonding pads of the first substrate. A first two-stage adhesive layer is formed on the first substrate and is B-stagized to form a first B-staged adhesive layer. A second two-stage adhesive layer is formed on the second substrate and is B-stagized to form a second B-staged adhesive layer. Then, the first substrate and the second substrate are bonded via the first and second B-staged adhesive layer such that the bumps pierce through the second B-staged adhesive layer and are electrically connected to the second bonding pads, wherein each of the first bonding pads is respectively electrically connected to one of the second bonding pads via one of the bumps.

Abstract: Some embodiments of a chip module comprise a substrate, a semiconductor chip on the substrate, and a first layer between the substrate and the semiconductor chip, the first layer having high reflectivity for electromagnetic waves. Methods of protecting a chip module from electromagnetic radiation by interposing a protective layer between the chip and the substrate are also disclosed.

Abstract: An integrated circuit (IC) package is disclosed comprising a substrate including a plurality of substrate contacts; a semiconductor die including a plurality of die contacts; and a plurality of conductors for providing direct connections between substrate contacts and die contacts, respectively. By having the conductors directly route the connections between the die contacts and substrate contacts, many improvements may be realized including, but not limited to, improved package routing capabilities, reduced die and/or package size, improved package reliability, improved current handling capacity, improved speed, improved thermal performance, and lower costs.

Abstract: A ball grid array device with an insulating substrate (110) having metal traces (106, for example copper, about 18 ?m thick) with sidewalls (108) at right angles to the trace top. The traces are grouped in a first (120) and a second set (121). The first set traces have the top surface covered by a thin noble metal (for example a nickel layer (130) about 0.1 ?m thick and an outermost gold layer (131) about 0.5 ?m thick), while the sidewalls are un-covered by the noble metal. About 1.5 ?m are thus gained for the trace spacing; oxidation of the trace sidewalls is enabled. The second set traces have the top surface un-covered by the noble metal; the traces are covered by an insulating soldermask. A semiconductor chip (101) with terminals (102) is attached to the substrate with the terminals connected to the noble metal of the first set traces, either by bonding wires (for example gold) or by metal studs (for example gold).

Abstract: A wafer level packaging method is revealed. Firstly, a wafer with a plurality of bumps disposed on a surface is provided. Placing a dielectric tape on a mold plate is followed. Then, the wafer is laminated with the mold plate to make the dielectric tape be compliantly bonded to the surface of the wafer and to make the bumps be embedded in the dielectric tape. After removing the mold plate, flattening the dielectric tape to form a plurality of exposed surfaces of the bumps wherein the exposed surfaces and the flattened surface of the dielectric tape are coplanar. Therefore, the exposed surfaces of the bumps can be regarded as effective alignment points for easy pattern recognition of the wafer level packaged wafers during singulation process.

Abstract: A method for manufacture of an integrated circuit packaging system includes: mounting an integrated circuit, having a planar interconnect, over a carrier with the planar interconnect at a non-active side of the integrated circuit and an active side of the integrated circuit facing the carrier; connecting the integrated circuit and the carrier; connecting the planar interconnect and the carrier; and forming an encapsulation over the integrated circuit, the carrier, and the planar interconnect.

Abstract: A dam stiffener for a package substrate is presented. In an embodiment, the dam stiffener comprises a thermally curable polymer, and is simultaneously cured with the underfill material to act as stiffener to the substrate. In another embodiment, a curable reservoir material can be dispensed to fill the space between the integrated circuit die and the dam stiffener, forming a thick reservoir layer, acting as an additional stiffener for the package substrate.