Abstract: A packaged semiconductor device has a metal plate (1200) with sawed sides (1200c), a flat first surface (1200a) and a parallel second surface (1200b); the plate is separated into a first section (1201) and a second section (1202) spaced apart by a gap (1230). The plate has on the second surface (1200b) at least one insular mesa (1205) of the same metal in each section, the mesas raised from the second plate surface. The device further has an insulating member (1231), which adheres to the first plate surface, bridges the gap, and thus couples the first and second sections together. The device further has a vertical stack (1270) of two power FET chips (1210) and (1220), each having a pair of terminals on the first chip surface (1211 and 1212; 1221 and 1222 respectively) and a single terminal on the second chip surface. The single terminals of chip (1210) and chip (1220) are attached to each other to form the common terminal (1240).

Abstract: An embedded semiconductor die package is made by mounting a frame carrier to a temporary carrier with an adhesive. The frame carrier includes die mounting sites each having a lead frame interconnect structure around a cavity. A semiconductor die is disposed in each cavity. An encapsulant is deposited in the cavity over the die. A package interconnect structure is formed over the lead frame interconnect structure and encapsulant. The package interconnect structure and lead frame interconnect structure are electrically connected to the die. The frame carrier is singulated into individual embedded die packages. The semiconductor die can be vertically stacked or placed side-by-side within the cavity. The embedded die packages can be stacked and electrically interconnected through the lead frame interconnect structure. A semiconductor device can be mounted to the embedded die package and electrically connected to the die through the lead frame interconnect structure.

Abstract: In the wiring board, insulating layers and wiring layers are alternately laminated, and the wiring layers are electrically connected by the vias. The wiring board includes first terminals arranged in a first surface and embedded in an insulating layer, second terminals arranged in a second surface opposite to the first surface and embedded in an insulating layer, and lands arranged in an insulating layer and in contact with the first terminals. The vias electrically connect the lands and the wiring layers laminated alternately with the insulating layers. No connecting interface is formed at an end of each of the vias on the land side but a connecting interface is formed at an end of each of the vias on the wiring layer side.

Abstract: A method of manufacturing a semiconductor package that includes: forming a first board; forming second boards, in each of which at least one cavity is formed; attaching the second boards to both sides of the first board, such that the second boards are electrically connected with the first board; and connecting at least one component with the first board by a flip chip method by embedding the component in the cavity. The method can prevent damage to the semiconductor chips and lower manufacturing costs, while the connection material may also mitigate stresses, to prevent cracking in the boards and semiconductor chips, while preventing defects such as bending and warpage. Defects caused by temperature changes may also be avoided. Furthermore, it is not necessary to use an underfill in the portions where the semiconductor chips are connected with the printed circuit board, which allows for easier reworking and lower costs.

Abstract: The present invention relates to a dicing die bonding film, which is able to maintain good workability and reliability in any semiconductor packaging process, such as adhesive property, gap filling property and pick-up property, while controlling burr incidence in a dicing process and thus contamination of die, and a dicing method. Specifically, the present invention is characterized by optimizing tensile characteristics of the dicing die bonding film, or carrying out the dicing on the parts of the die bonding film in the dicing process and separating it through an expanding process. Therefore, the present invention may regulate physical properties of films so as to have the maximized adhesive property, pick-up property and gap filling property without any specific restriction, while controlling burr incidence in the dicing process and contamination of die. As a result, workability and reliability in a packaging process may be excellently maintained.

Abstract: A semiconductor device with an improved solder joint system is described. The solder system includes two copper contact pads connected by a body of solder and the solder is an alloy including tin, silver, and at least one metal from the transition groups IIIA, IVA, VA, VIA, VIIA, and VIIIA of the Periodic Table of the Elements. The solder joint system also includes, between the pads and the solder, layers of intermetallic compounds, which include grains of copper and tin compounds and copper, silver, and tin compounds. The compounds contain the transition metals. The inclusion of the transition metals in the compound grains reduce the compound grains size and prevent grain size increases after the solder joint undergoes repeated solid/liquid/solid cycles.

Abstract: A semiconductor package includes a semiconductor device, and a wiring board where the semiconductor device is mounted. The semiconductor device includes a semiconductor substrate, a piercing electrode configured to pierce the semiconductor substrate and electrically connect the wiring board and the semiconductor device, and a ring-shaped concave part provided so as to surround the piercing electrode, the ring-shaped concave part being configured to open to a wiring board side of the semiconductor substrate.

Abstract: The semiconductor device comprises a semiconductor chip defining a first face and a second face opposite to the first face, the semiconductor chip comprising at least one contact element on the first face of the semiconductor chip, an encapsulating body encapsulating the semiconductor chip, the encapsulating body having a first face and a second face opposite to the first face, a redistribution layer extending over the semiconductor chip and the first face of the encapsulating body and containing a metallization layer comprising contact areas connected with the contact elements of the semiconductor chip, and an array of external contact elements located on the second phase of the encapsulating body.

Abstract: A method of forming a ball grid array (BGA) package is provided. The method includes coupling an integrated circuit (IC) die to a heat spreader in an opening of a substrate, the opening of the substrate extending through the substrate, such that a portion of the heat spreader is accessible through the opening and coupling a first surface of a second substrate to the IC die via a bump interconnect. The second surface of the second substrate has an array of contact pads capable of coupling to a board.

Abstract: A semiconductor package capable of being efficiently stacked and a method of manufacturing the same is presented. The semiconductor package includes a semiconductor chip, an insulation layer, and a through-electrode. The semiconductor chip has a first surface and a second surface, a circuit section in the semiconductor chip, an internal circuit pattern electrically connected to the circuit section, and a through-hole that passes through the internal circuit pattern and through the first and second surfaces. The insulation layer is on a through-hole of the semiconductor chip and has an opening which exposes the internal circuit pattern which was exposed by the through-hole. The through-electrode is in the through-hole and electrically coupled to the internal circuit pattern which is exposed through the opening of the insulation layer.

Abstract: Provided is a semiconductor device and a method of manufacturing the semiconductor device, in which the semiconductor device has a semiconductor element having a plurality of wires bonded to the semiconductor element with sufficient bonding reliability and has a good heat dissipation property. A semiconductor device in which a first wire is ball bonded on an electrode, and a second wire is further bonded on the ball-bonded first wire, and the first wire or an end of the second wire defines a space between itself and the ball portion of the first wire.

Abstract: A semiconductor device includes a substrate having a chip island, a chip attached to the chip island, and encapsulation material deposited on the chip and part of the chip island. The chip island includes a first main face to which the chip is attached opposite a second main face, with the second main face of the chip island defining at least one cavity.

Abstract: A device comprises a conductive substrate, a micro electromechanical systems (MEMS) structure, and a plurality of bond pads. The conductive substrate has a first side and a second side, the second side opposite the first side. The MEMS structure is formed over the first side of the conductive substrate. The plurality of bond pads are formed over the first side of the conductive substrate and electrically coupled to the first side of the conductive substrate. The conductive substrate and plurality of bond pads function to provide electrostatic shielding to the MEMS structure.

Abstract: A semiconductor element (101) includes an electrode section (102) and a bump (105), a circuit board (103) includes an electrode section (104) and a bump (106), and a conductive filler (108) having a lower melting point than the melting points of the bumps (105, 106) electrically bonds the bumps (105, 106) to each other.

Abstract: In a method for mounting a chip on a substrate, a plurality of grooves are defined in the substrate. A plurality of pads are formed in the grooves. A height of each of the plurality of pads is less than a depth of each corresponding groove. The chip configured with a plurality of soldering balls is positioned on the substrate with the plurality of soldering balls being received in the plurality of grooves and contacting the plurality of pads respectively. The chip is mounted onto the substrate by a melting process.

Abstract: A semiconductor device has a first layer pressing portion that is formed by crushing a ball neck formed by bonding an initial ball onto a first layer pad of a first layer semiconductor die and pressing the side of a wire folded onto the crushed ball neck, a first wire extended in the direction of a lead from the first layer pressing portion, and a second wire that is looped from a second layer pad of a second layer semiconductor die toward the first layer pressing portion and joined onto the second layer pad side of the first layer pressing portion. Thereby, the connection of wires is performed at a small number of times of bonding, while reducing damages caused on the semiconductor dies.

Abstract: The present invention provides a semiconductor device and manufacturing method of the semiconductor device which can prevent breaks in an interlayer insulation film (12) and electrode (13) that arise with bonding while maintaining bonding strength. A semiconductor element (1) mounted on a semiconductor device including an interlayer insulation film (12) which has an aperture part (123) having an opening shape which is defined by an extension part (121) which covers the gate electrode (116) and extends in the first direction, a connection part (122), the extension part (121) and the connection part (122) which connects at fixed intervals in the first direction a pair of extension parts (121) which are adjacent to the second direction, and which exposes a main surface of a base region (112) and a main surface of an emitter region (113).

Abstract: A semiconductor die package is disclosed. The semiconductor die package comprises a metal substrate, and a semiconductor die comprising a first surface comprising a first electrical terminal, a second surface including a second electrical terminal, and at least one aperture. The metal substrate is attached to the second surface. A plurality of conductive structures is on the semiconductor die, and includes at least one conductive structure disposed in the at least one aperture. Other conductive structures may be disposed on the first surface of the semiconductor die.

Abstract: The present invention includes a temporary fixing step of temporarily fixing a semiconductor element on an adherend interposing an adhesive sheet therebetween, a wire-bonding step of bonding wires to the semiconductor element, and a step of sealing the semiconductor element with a sealing resin, and in which the loss elastic modulus of the adhesive sheet at 175° C. is 2000 Pa or more.

Abstract: A semiconductor assembly is provided that includes a substrate that has a first surface. A chip is coupled to the substrate. The chip has a second surface that faces the first surface of the substrate. The chip is spaced apart from the substrate forming a gap. At least a portion of the substrate is coupled to the chip by solder bumps. The solder bumps include a deformable material, such that as a height of the gap between the chip and the substrate increases, the solder bumps deform into a stretched state. An underfill material is applied between the substrate and the chip. The underfill material substantially fills the gap between the chip and the substrate and surrounds the solder bumps in the stretched state. Barricades comprising non-conductive protrusions are disposed between the first surface of the substrate and the second surface of the chip. The barricades confine the solder bumps in a compressed state.

Abstract: A connection component for mounting a chip or other microelectronic element is formed from a starting unit including posts projecting from a dielectric element by crushing or otherwise reducing the height of at least some of the posts.

Abstract: A method for mounting a semiconductor device onto a composite substrate, including a submount and a heat sink, is described. According to one aspect of the invention, the materials for the submount and the heat sink are chosen so that the value of coefficient of thermal expansion of the semiconductor device is in between the values of coefficients of thermal expansion of the materials of the submount and the heat sink, the thickness of the submount being chosen so as to equalize thermal expansion of the semiconductor device to that of the surface of the submount the device is mounted on. According to another aspect of the invention, the semiconductor device, the submount, and the heat sink are soldered into a stack at a single step of heating, which facilitates reduction of residual post-soldering stresses.

Abstract: The present invention has been made and an object thereof is to provide a thermosetting die-bonding film which can remarkably reduce working hours at the time of die bonding of a semiconductor chip, and a dicing die-bonding film including the thermosetting die-bonding film and a dicing film layered to each other. The present invention relates to a thermosetting die-bonding film used to produce a semiconductor device, comprising a thermosetting catalyst in a non-crystalline state in an amount within a range from 0.2 to 1 part by weight based on 100 parts by weight of an organic component in the film.

Abstract: The semiconductor device includes a substrate over one surface of which an electroless plating electrode film is formed; a semiconductor chip mounted over the one surface of the substrate; and a bonding wire which connects the semiconductor chip and one surface of the electroless plating electrode film, a recessed depth which is a difference between a lowermost height of a bonding portion of the one surface of the electroless plating electrode film to the bonding wire, and an uppermost height of the one surface other than the bonding portion being equal to or less than 1.5 ?m.

Abstract: A technique for expanding an effective area in which a semiconductor structure required for a semiconductor device to function is desired. With the semiconductor device 2 of this invention, a pad 12 to be connected with a conductive wire 14 is sloping with respect to the surface of the semiconductor device 2 around the pad 12 and along a longitudinal direction of the conductive wire 14. Consequently, the length of the pad 12, when projecting the pad 12 onto the surface of the semiconductor device 2, can be shortened. As a result, the area of the pad region 10 can be reduced and the effective area for forming a semiconductor structure can be enlarged.

Abstract: A solder ball structure and a method for forming the same. The structure includes (i) a first dielectric layer which includes a top dielectric surface, (ii) an electrically conductive line, (iii) a second dielectric layer, (iv) a ball-limiting-metallurgy (BLM) region, and (v) a solder ball. The BLM region is electrically connected to the electrically conductive line and the solder ball. The BLM region has a characteristic that a length of the longest straight line segment which is parallel to the top dielectric surface of the first dielectric layer and is entirely in the BLM region does not exceed a pre-specified maximum value. The pre-specified maximum value is at most one-half of a maximum horizontal dimension of the BLM region measured in a horizontal direction parallel to the top dielectric surface of the first dielectric layer.

Abstract: Stacked microfeature devices and associated methods of manufacture are disclosed. A package in accordance with one embodiment includes first and second microfeature devices having corresponding first and second bond pad surfaces that face toward each other. First bond pads can be positioned at least proximate to the first bond pad surface and second bond pads can be positioned at least proximate to the second bond pad surface. A package connection site can provide electrical communication between the first microfeature device and components external to the package. A wirebond can be coupled between at least one of the first bond pads and the package connection site, and an electrically conductive link can be coupled between the first microfeature device and at least one of the second bond pads of the second microfeature device. Accordingly, the first microfeature device can form a portion of an electrical link to the second microfeature device.

Abstract: Electrodes formed in a partial surface area of a semiconductor substrate and distal ends of conductive nanotubes bristled on a surface of a growth substrate, are bombarded with rare gas plasma. The distal ends of the conductive nanotubes bombarded with the rare gas plasma are brought into contact with the electrodes bombarded with the rare gas plasma to fix the conductive nanotubes to the electrodes. The growth substrate is separated from the semiconductor substrate in such a manner that the conductive nanotubes fixed to the electrodes remain on the electrodes formed on the semiconductor substrate.

Abstract: A chip module having a substrate and at least one chip connected to the substrate is provided, the substrate featuring a first main plane of extension and the chip featuring a second main plane of extension, and an acute angle being provided between the first main plane of extension and the second main plane of extension, and the substrate also comprising a mold housing.

Abstract: A semiconductor element that is excellent in both mechanical reliability and electrical reliability and a mounting structure for the semiconductor element are provided. The semiconductor element includes: a substrate; an electrically conductive layer on the substrate; a protective layer having an opening on the electrically conductive layer; a barrier metal layer in contact with the electrically conductive layer in the opening; and an electrically conductive bump on the barrier metal layer. The barrier metal layer contains phosphorus and has a phosphorus-rich portion that has a higher phosphorus content than the remaining portion has. The phosphorus-rich portion is located in the surface of the barrier metal layer facing the electrically conductive bump, and the thickness thereof in the periphery of the region where the electrically conductive bump is formed is larger than at the center of the region.

Abstract: A method for manufacturing a semiconductor device includes mounting a first chip over a first area of a chip mounting section of a lead frame and mounting a second chip over a second area of the chip mounting section, wherein the second area is adjacent to the first area via the slit. The chip mounting section is disposed on a flat heating jig. First pads of the first chip are connected with second pads of the second chip via first wires, respectively, and the first pads are connected with leads of the lead frame via second wires, respectively, the first chip, the second chip, the first wires and the second wires are sealed with a resin such that a part of each of the leads is exposed from the resin, and each of the leads is then separated from the lead frame.

Abstract: A manufacturing method of bottom substrate of package. A bottom substrate of a package on package electrically connected to a top substrate by means of a solder ball, including a core board, a solder ball pad formed on a surface of the core board in correspondence with a location of the solder ball, an insulation layer laminated on the core board, a through hole formed by removing a part of the insulation layer such that the solder ball pad is exposed, and a metallic layer filled in the through hole and connected electrically with the solder ball, allows the number of ICs mounted on a bottom substrate to be increased without increasing the size of a solder ball, and allows the size and pitch of the solder balls to be made smaller by controlling the thickness of the insulation layer laminated on the bottom substrate, whereby more signal transmission is possible between a top substrate and a bottom substrate.

Abstract: Packaged semiconductor components having substantially rigid support member are disclosed. The packages can include a semiconductor die and a support member proximate to the semiconductor die. The support member is at least substantially rigid. The packages can further include an adhesive between the support member and the semiconductor die and adhesively attaching the support member to the semiconductor die. The packages can also include a substrate carrying the semiconductor die and the support member attached to the semiconductor die.

Abstract: A stack-type semiconductor device according to the present invention includes a circuit board with bonding pads; a first semiconductor chip which includes first electrode pads and is mounted on the circuit board; a second semiconductor chip which includes second electrode pads and is mounted on the first semiconductor chip; a plurality of bonding wires sequentially connecting the bonding pads, the first electrodes and the second electrodes as a whole; and a sealing resin for sealing the first semiconductor chip, the second semiconductor chip and the bonding wires.

Abstract: A multi-chip stack structure and a fabrication method thereof are proposed, including providing a leadframe having a die base and a plurality of leads and disposing a first and a second chips on the two surfaces of the die base respectively; disposing the leadframe on a heating block having a cavity in a wire bonding process with the second chip received in the cavity of the heating block; performing a first wire bonding process to electrically connect the first chip to the leads through a plurality of first bonding wires, and forming a bump on one side of the leads connected with the first bonding wires; disposing the leadframe in an upside down manner to the heating block via the bump with the first chip and the first bonding wires received in the cavity of the heating block; and performing a second wire bonding process to electrically connect the second chip to the leads through a plurality of second bonding wires.

Abstract: Regarding a semiconductor device, especially the present invention suppresses disconnection of the connection structure concerned in the semiconductor device which has the electric and mechanical connection structure using solder, and aims at improving connection reliability. And to achieve the above objects, the semiconductor device has the solder bump which electrically connects a semiconductor chip and a package substrate, the under-filling resin with which it filled up between the semiconductor chip and the package substrate, and a solder ball which electrically connects a package substrate with the outside, and the solder bump's elastic modulus is made lower than the elastic modulus of a solder ball.

Abstract: A solder bump forming method of carrying out a reflow treatment over a conductive ball mounted on a plurality of pads, thereby forming a solder bump, includes a metal film forming step of forming a metal film capable of chemically reacting to a tackifying compound on the pads, an organic sticking layer forming step of causing a solution containing the tackifying compound to chemically react to the metal film, thereby forming an organic sticking layer on the metal film, and a conductive ball mounting step of supplying the conductive ball on the pads having the organic sticking layer formed thereon, thereby mounting the conductive ball on the pads through the metal film.

Abstract: A semiconductor device with improved bondability between a wire and a bump and cutting property of the wire to improve the bonding quality. In the semiconductor device, a wire is stacked on a pad as a second bonding point to form a bump having a sloped wedge and a first bent wire convex portion, and a wire is looped from a lead as a first bonding point to the bump and is pressed to the sloped wedge of the bump with a face portion of a tip end of a capillary to bond the wire to the bump. At the same time, the wire is pressed to the first bent wire convex portion using an inner chamfer of a bonding wire hole in the capillary to form a wire bent portion having a bow-shaped cross section. The wire is pulled up and cut at the wire bent portion.

Abstract: The present invention provides a semiconductor device which includes a semiconductor chip formed with an electrode pad on one surface thereof, a wiring board having a wiring pattern, with its one surface opposing the other surface of the semiconductor chip, a wire for electrically connecting the electrode pad of the semiconductor chip with the wiring pattern of the wiring board, an external terminal arranged on the other surface of the wiring board for electrical connection with the electrode pad through the wire and wiring pattern, and a sealant for fixing the semiconductor chip on one surface of the wiring board such that a hollow is formed between the other surface of the semiconductor chip and the one surface of the wiring board. The wiring board includes a throughhole communicating with the hollow.

Abstract: A wiring circuit layer 2 having at least a wiring part and an insulating part, whose top and bottom surfaces (20A, 20B) is adhesive surfaces, is formed on a metal support substrate 1 in a way such that the layer 2 can be peeled from the substrate 1. Exposed in the first adhesive surface 20A of the wiring circuit layer 2 is a first connecting conductor part 21, which is connectable with an electrode 31 of a first semiconductor element 3 in a wafer state. After the wiring circuit layer 2 is laminated on and connected to the element 3, the metal support substrate 1 is peeled from the wiring circuit layer 2 to yield a semiconductor device 4. Another element may be connected to the other adhesive surface 20B exposed upon the peeling.

Abstract: Some embodiments of the invention include a connecting structure between a support and at least one die attached to the support. The die includes a number of die bond pads on a surface of the die. The connecting structure includes a plurality of via and groove combinations. Conductive material is formed in the via and groove combinations to provide connection between the die bond pads and bond pads on the support. Other embodiments are described and claimed.

Abstract: A semiconductor package includes a semiconductor die attached to a support having electrically conductive paths, the semiconductor die having a bond-pad electrically connected to the electrically a conductive path on the support by a wire-bond of a first metallic composition, the wire-bond and the bond-pad being coated with a protection layer of a second metallic composition.

Abstract: A stacked die chip scale package, in which a stacked die assembly is mounted within a cavity in a module substrate. In some embodiments certain of the die are stacked on a front side of a stacked die assembly substrate, and the stacked die assembly substrate is inverted in the cavity and the substrate is electrically interconnected to a front side of the module substrate; others of the die are stacked on the back side of the stacked die assembly substrate, and are interconnected by wire bonds to the front side of the module substrate. In some embodiments, the cavity is covered by a heat sink, and the stacked die assembly is mounted onto the heat sink. Also, methods for making the module are provided.

Abstract: A semiconductor device has a first layer pressing portion that is formed by crushing a ball neck formed by bonding an initial ball onto a first layer pad of a first layer semiconductor die and pressing the side of a wire folded onto the crushed ball neck, a first wire extended in the direction of a lead from the first layer pressing portion, and a second wire that is looped from a second layer pad of a second layer semiconductor die toward the first layer pressing portion and joined onto the second layer pad side of the first layer pressing portion. Thereby, the connection of wires is performed at a small number of times of bonding, while reducing damages caused on the semiconductor dies.

Abstract: A cavity package (100) for micrometer-scale MEMS devices surrounding the cavity (210) with the MEMS device (220) with a rim (232) of solder-wettable metal, and then covering the cavity with a roof (240) of solder spanning from rim to rim. A solder body, placed over the cavity to rest on the rim, is reflowed; the surface tension of the liquid solder is reduced by the interfacial tension of the rim metal so that the liquid solder spreads over the rim surface and thereby stretches the liquid ball to a plate-like roof over the cavity. After solidifying the solder, the solder-to-metal seal renders the cavity package hermetic.

Abstract: Disclosed is a semiconductor device manufacturing method including: preparing a semiconductor wafer which includes a semiconductor device forming region surrounded by dicing streets extending along first and second directions and including columnar electrodes and a sealing film; with respect to the columnar electrodes nearest the dicing streets in the first direction or the columnar electrodes nearest the dicing streets in the second direction, solder paste layers are displaced to an inward side of the semiconductor device forming region; by performing reflow, allowing the solder paste layer contacting with the columnar electrodes nearest the pair of dicing streets extending in the first direction or the solder paste layer contacting with the columnar electrodes nearest the pair of dicing streets extending in the second direction to move so as to form solder bumps.

Abstract: An embodiment of the invention provides a method for forming an electronic device package, which includes providing a carrier substrate having an upper surface and an opposite lower surface; forming a cavity from the upper surface of the carrier substrate; disposing an electronic device having a conducting electrode in the cavity; forming a filling layer in the cavity, wherein the filling layer surround the electronic device; thinning the carrier substrate from the lower surface to a predetermined thickness; forming at least a through-hole in the electronic device or the in the carrier substrate; and forming a conducting layer over a sidewall of the through-hole, wherein the conducting layer electrically connects to the conducting electrode.

Abstract: A method of fabricating a semiconductor integrated circuit device uses a mold which is provided with a plurality of air vents and movable pins which are formed such that the movable pins include grooves in the distal ends thereof which project into the air vents. By clamping the mold in a state such that the distal ends of the movable pins are pushed against a multi-cavity board at the time of clamping the mold, resin can be filled while leaking air inside the cavity through the grooves formed in the distal ends of the movable pins by setting the depths of the respective air vents to a fixed value irrespective of the irregularities in thickness of the multi-cavity boards. Accordingly, it is possible to prevent insufficient filling of resin in the cavity, the leaking of resin or defective welding, whereby the yield rate of products can be enhanced.

Abstract: The invention provides a Wafer Level Chip Size Packaging (WLCSP) target and a method for forming it. A WLCSP target is formed by recombining single chips, wafer parts each including two or more chips or half finished packaging targets which have been subjected to at least one previous step of packaging onto a first substrate, or bonding a wafer part which is formed by dicing a whole wafer and includes at least two chips to a second substrate for bonding. Thus, a wafer with a larger size can be packaged through the WLCSP on a WLCSP apparatus with a smaller size while benefiting from the advantages of the WLCSP, the WLCSP apparatus remains applicable within a longer period of time, the cost is lowered, and enterprises may keep up with the development of the market and the increase of the wafer size without having to update the WLCSP apparatus substantially.

Abstract: A leadless integrated circuit (IC) package comprising an IC chip mounted on a die attach pad and a plurality of electrical contacts electrically connected to the IC chip. The IC chip, the electrical contacts, and the die attach pad are all covered with a molding material, with portions of the electrical contacts and die attach pad protruding from a bottom surface of the molding material.