Abstract: A package substrate may include an insulating substrate, a circuit pattern and a mold gate pattern. The insulating pattern may have a mold gate region through which a molding member may pass. The circuit pattern may be formed on the insulating substrate. The mold gate pattern may be formed on the mold gate region of the insulating substrate. The mold gate pattern may include a polymer having relatively strong adhesion strength with respect to the insulating substrate and relatively weak adhesion strength with respect to the molding member. Thus, costs of the package substrate and the semiconductor package may be decreased.

Abstract: A power semiconductor device with improved productivity, reduced size and reduction of amounting area therefore is provided. In the provided power semiconductor device, an external terminal does not limit an increase in current. The power semiconductor device is sealed with transfer molding resin. In the power semiconductor device, a cylindrical external terminal communication section is arranged on a wiring pattern so as to be substantially perpendicular to the wiring pattern. An external terminal can be inserted and connected to the cylindrical external terminal communication section. The cylindrical external terminal communication section allows the inserted external terminal to be electrically connected to the wiring pattern. A taper is formed at, at least, one end of the cylindrical external terminal communication section, which one end is joined to the wiring pattern.

Abstract: The present invention provides a process for manufacturing an integrated circuit (IC) package and an integrated circuit (IC) package. The process, without limitation, includes providing an integrated circuit chip having a configuration, and forming a layer of overcoat material over the integrated circuit chip based upon the configuration.

Abstract: Semiconductor devices including a substrate and an uppermost insulating layer formed on the substrate and having pores is provided. A conductive wiring is provided in the uppermost insulating layer. Dummy vias are provided, each penetrating the uppermost insulating layer, being adjacent to the conductive wiring, and having a space therein. Related methods of fabricating semiconductor devices are also provided.

Abstract: A reliable optical semiconductor device can include an optical semiconductor chip sealed in a surrounding soft resin and in a hard resin that is harder than the soft resin. The hard resin can include an aperture that is configured to relieve a state of hermetic sealing for the soft resin (allows the soft resin to expand during volume change due to temperature fluctuations, etc.) and can be formed in a direction that imposes substantially no optical influence on a function of the optical semiconductor chip. The soft resin and the hard resin can be employed for double sealing to form the highly reliable optical semiconductor device without requiring additional space. This is effective to solve a problem caused in a conventional optical semiconductor device associated with double sealing by soft and hard resins, which requires a space between both resins and results in deteriorated performance, for example, a reduced amount of light.

Abstract: A method of joining a thermoplastic material to a thermoset material, and a resultant thermoplastic-thermoset composite formed from such method are provided. At least one of the thermoplastic material and the thermoset material includes particles that melt when the thermoplastic material and the thermoset material are heated during the joining operation. The particles further produce a solid bond between the materials after the particles have solidified in the course of cooling after the joining operation.

Abstract: A method of processing a flexible encapsulation scheme to encapsulate a flexible device, such as a display device in order to provide structural support for the display module. An upper transparent encapsulation layer covers and protects the media and active area of the device. A lower encapsulation layer is deposited over the under side of the display to complete the encapsulation and the two protective encapsulation layers are sealed. A driver housing may be positioned at the opposite end of the device to the overlap region of the encapsulation layers in order to protect the driver electronics.

Abstract: A semiconductor device includes a substrate, a semiconductor chip, and first and second insulations. The substrate has at least a first region and a second region. The semiconductor chip structure covers the first region. The first insulation covers the second region. The first insulation has a first thermal expansion coefficient approximately equal to that of the semiconductor chip structure. The second insulation covers the semiconductor chip structure and the first insulation so that the semiconductor chip structure and the first insulation are sandwiched between the substrate and the second insulation. The second insulation has a second thermal expansion coefficient approximately equal to that of the substrate.

Abstract: The semiconductor device 1 includes a substrate 3, a semiconductor chip 4 mounted on the substrate 3, the substrate 3, a bump 5 connecting the substrate 3 and the semiconductor chip 4, and an underfill 6 filling in around the bump 5. In the case of a bump 5 composed of a high-melting-point solder having a melting point of 230° C. or more, the underfill 6 is composed of a resin material having an elastic modulus in the range of 30 MPa to 3000 MPa. In the case of a bump 5 composed of a lead-free solder, the underfill 6 is composed of a resin material having an elastic modulus in the range of 150 MPa to 800 MPa. An insulating layer 311 of buildup layers 31 of the substrate 3 has a linear expansion coefficient of 35 ppm/° C. or less in the in-plane direction of the substrate at temperatures in the range of 25° C. to the glass transition temperature.

Abstract: An F-RAM package having a semiconductor die containing F-RAM circuitry, a mold compound, and a stress buffer layer that is at least partially located between the semiconductor die and the mold compound. Also, a method for making an F-RAM package that includes providing a semiconductor die containing F-RAM circuitry, forming a patterned stress buffer layer over the semiconductor die, and forming a mold compound coupled to the stress buffer layer.

Abstract: In some embodiments, an injection molded metal stiffener for packaging applications is presented. In this regard, an apparatus is introduced comprising a microelectronic device package substrate, a microelectronic device coupled with a top surface of the package substrate, and an injection-molded, metal stiffener coupled with the package substrate, wherein the stiffener includes a central opening and at least partially surrounds the microelectronic device. Other embodiments are also disclosed and claimed.

Abstract: A package structure and fabrication method thereof. The structure includes a substrate having a terminal, a chip overlying the substrate, the chip having an active surface, having a center region and periphery region, the periphery region having an electrode thereon, a patterned cover plate overlying the chip and exposing the electrode, a conductive material electrically connecting the electrode and terminal, and an encapsulant covering the terminal, conductive material, and electrode, but exposing the cover plate overlying the center region of the chip.

Abstract: A method of manufacturing a semiconductor device includes at least bonding wires between electrode pads on a main surface of a semiconductor chip and connection pads on a wiring board. The wires form loop shapes from the electrode pads of the semiconductor chip. The method of manufacturing a semiconductor device also includes at least forming flat parts on the loop-shaped wires, and using a sealing material to seal the semiconductor chip such as to bury the flat parts.

Abstract: The present invention provides a multichip package wherein a plurality of semiconductor chip packages (100) in each of which first electrode pads (16a) provided in a main surface of a semiconductor chip, and first bonding pads (20a) and first central bonding pads (18a) formed in an upper area of the main surface are respectively electrically connected by first redistribution wiring layers (24) in a one-to-one correspondence relationship, and second electrode pads (17b), and second bonding pads (22b) and second central bonding pads (18b) formed in an upper area of the main surface are respectively electrically connected by second redistribution wiring layers (26) in a one-to-one correspondence relationship, are stacked on one another.

Abstract: A semiconductor package system is provided. A substrate having a die attach paddle is provided. A first plurality of leads is provided around the die attach paddle having a first plurality of lead tips. A second plurality of leads is provided around the die attach paddle interleaved with the first plurality of leads, at least some of the second plurality of leads having a plurality of depression lead tips. A first die is attached to the die attach paddle. The die is wire bonded to the first plurality of leads and the second plurality of leads. The die is encapsulated.

Abstract: An integrated package system with die and package combination includes forming a leadframe having internal leads and external leads, encapsulating a first integrated circuit on the leadframe, and encapsulating a second integrated circuit over the first integrated circuit.

Abstract: There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a technique of fabricating or manufacturing MEMS having mechanical structures that operate in controlled or predetermined mechanical damping environments. In this regard, the present invention encapsulates the mechanical structures within a chamber, prior to final packaging and/or completion of the MEMS. The environment within the chamber containing and/or housing the mechanical structures provides the predetermined, desired and/or selected mechanical damping. The parameters of the encapsulated fluid (for example, the gas pressure) in which the mechanical structures are to operate are controlled, selected and/or designed to provide a desired and/or predetermined operating environment.

Abstract: A semiconductor device is provided in which the heat dissipation characteristic of a flip-chip mounted semiconductor chip is improved. A semiconductor device is provided with a substrate, a semiconductor flip-chip mounted on the substrate, a sealing resin layer for sealing around the semiconductor flip-chip. A sealing resin layer for sealing the semiconductor chip is formed around the semiconductor chip. In this semiconductor device, the back surface of the semiconductor chip is exposed and is convex with respect to the upper surface of the sealing resin layer.

Abstract: An apparatus and a method for packaging semiconductor devices. The apparatus is a three-dimensional electronic package comprising one or more electronic components, a plurality of electrical contact pads, and a plurality of electrically conductive three-dimensional plugs formed through an encapsulant. Specific ones of the plurality of electrical contact pads are electrically coupled to the one or more electronic components on an uppermost surface of the plurality of electrical contact pads. The encapsulant is formed over and covers the one or more electronic devices. The plurality of three-dimensional plugs have a first end extending from at least the uppermost portion of one or more of the plurality of electrical contact pads and a second end extending substantially to an uppermost surface of the encapsulant.

Abstract: A method for cutting and molding in small windows of a window-type semiconductor package and the semiconductor package fabricated from the same are revealed. According to the method, a substrate strip has a plurality of small windows disposed at the sides or at the corners of the substrate strip. The external surface of the substrate strip includes a plurality of window molding areas surrounding the small windows and extending to the scribe lines. A plurality of chips are disposed on the substrate strip. Then, an encapsulant is formed in the small windows to encapsulate the electrical connecting components and formed on the window molding areas so that the encapsulant extends to the scribe lines. Therefore, the mold flashes at the small windows can be effectively reduced.

Abstract: A device with a semiconductor chip assembled on a planar substrate and encapsulation compound surrounding the assembled chip and a portion of the substrate near the chip; the compound has a planar top area. The encapsulation compound has a plurality of side areas reaching from the substrate to the top area; these side areas form edge lines with the top area, where the top area plane intersects with the respective plane of each side area. The encapsulation compound is recessed along the edge lines so that the material is caved-in along the lines; this feature causes the recess to prevent any compound from the side area planes to reach the top area plane, whereby the planarity of the top area is preserved.

Abstract: In a state where a semiconductor wafer is not acted upon by its own weight, a shear stress on a rear surface side portion of the semiconductor wafer is higher than that on a front surface side portion of the semiconductor wafer, in a compression direction. Thereby, sag of the semiconductor wafer is reduced when the semiconductor wafer is simple-supported in a horizontal state.

Abstract: A semiconductor package device, a semiconductor package structure, and fabrication methods thereof are provided, which mainly includes disposing a plurality of semiconductor chips on a wafer formed with TSVs (Through Silicon Vias) and electrically connecting the semiconductor chips to the TSVs; encapsulating the semiconductor chips with an encapsulant; and disposing a hard component on the encapsulant. The hard component ensures flatness of the wafer during a solder bump process and provides support to the wafer during a singulation process such that the wafer can firmly lie on a singulation carrier, thereby overcoming the drawbacks of the prior art, namely difficulty in mounting of solder bumps, and difficulty in cutting of the wafer.

Abstract: A semiconductor device that can be readily manufactured, can include a large number of pads, and can be thin, and a method for manufacturing the same are provided. The semiconductor device is characterized in that the semiconductor device includes an LSI chip, an insulating layer provided on the LSI chip and made of a nonphotosensitive resin, the insulating layer including a via hole in the position corresponding to an externally connected pad, and a wiring layer extending along the insulating layer through the via hole to the externally connected pad, and at least part of the via hole is formed by irradiating the insulating layer with laser light.

Abstract: In some embodiments, package on package using a bump-less build up layer (BBUL) package is presented.

Abstract: A semiconductor package includes a carrier, a chip, a stiffener and an encapsulant. The chip is disposed on the carrier. The stiffener is disposed around the chip, directly contacts the carrier, and is mounted on the carrier. The encapsulant is adapted to seal the chip and the stiffener.

Abstract: A semiconductor package includes a carrier, a chip, a stiffener and an encapsulant. The chip is disposed on the carrier. The stiffener is disposed around the chip, directly contacts the carrier, and is mounted on the carrier. The encapsulant is adapted to seal the chip and the stiffener.

Abstract: A conductive region electrically connected to a buffer coat film is formed on at least one corner of a semiconductor substrate, so that electricity charged on a package seal resin or a surface of the buffer coat film is allowed to flow toward the conductive region through a conductive path. Thus, density of the electricity charged on the package seal resin or the surface of the buffer coat film is lowered, and electric discharge can be suppressed. Since the electric discharge is suppressed, no high voltage is applied to an external input/output terminal. As a result, it is possible to prevent a circuit metal wire connected to an integrated circuit from being fused and an interlayer insulating film from being damaged.

Abstract: In inspecting for quality of underfill material dispensed in an IC package, a camera image is captured for the IC package having the underfill material dispensed between an IC die and a package substrate. A data processor analyzes the camera image to determine an occurrence of an unacceptable condition of the underfill material. Pre-heating and/or post-heating of the package substrate before and/or after dispensing the underfill material by a contact-less heater ensures uniform spreading of the underfill material.

Abstract: Multiple semiconductor device components and passive device components fixed to a substrate are embedded within an electroconductive-film/insulating-resin-film structure, and are thermally bonded to an insulating resin film.

Abstract: A single metal layer tape substrate includes a patterned metal layer affixed to a patterned dielectric layer. The dielectric layer is patterned to provide openings exposing lands and bond sites on bond fingers on the land side of the metal layer. The metal layer is patterned to provide circuit traces as appropriate for interconnection with the die (on the die attach side) and with other elements (such as other packages in a multi-package module). Interconnection with a die is made by wire bonding to exposed traces on a die attach side of the metal layer, and bond fingers and lands for access to testing the package are provided on the opposite (land) side of the metal layer.

Abstract: To reduce defects of a semiconductor device, such as defects in shape and characteristic due to external stress and electrostatic discharge. To provide a highly reliable semiconductor device. In addition, to increase manufacturing yield of a semiconductor device by reducing the above defects in the manufacturing process. The semiconductor device includes a semiconductor integrated circuit sandwiched by impact resistance layers against external stress and an impact diffusion layer diffusing the impact and a conductive layer covering the semiconductor integrated circuit. With the use of the conductive layer covering the semiconductor integrated circuit, electrostatic breakdown (malfunctions of the circuit or damages of a semiconductor element) due to electrostatic discharge of the semiconductor integrated circuit can be prevented.

Abstract: The present invention relates to a semi-finished package and a method for making a package. The semi-finished package includes a carrier and at least one molding compound. The molding compound is disposed on a surface of the carrier, and has a body and a plurality of outer protrusions. The outer protrusions are disposed at the periphery of the body, and the height of the outer protrusions is greater than that of the body. Thus, by utilizing the outer protrusions, the rigidity of the semi-finished package is increased, so as to overcome the warpage of the semi-finished package caused by different coefficients of thermal expansion of the molding compound and the carrier. Therefore, the yield rate of the package unit is increased.

Abstract: An electronic component, in which the outer perimeter portion of a component (2) is surrounded with a first sealing resin (4), a second sealing resin (3) is filled within the periphery of the first sealing resin (4), the component (2) and a board (1) are electrically connected by a wire (5), the edge, in the vicinity of which the wire (5) passes, of the outer perimeter edge portions of the component (2) is formed to be a chamfered oblique surface (31), and the wire (5) is provided to extend to the board (1) along the oblique surface (31). By this means, the overall height of the electronic component can be kept low.

Abstract: A semiconductor package having a molding unit that seals bonding wires connected to electrode pads of a semiconductor chip is provided with through electrode units comprising bonding wires embedded therein and penetrating the molding unit. A leading end of the respective through electrode units is exposed from an upper surface of the molding unit and a lower surface of the molding unit.

Abstract: In one embodiment, an edge seal region of a semiconductor die is formed by forming a first dielectric layer on a surface of a semiconductor substrate near an edge of the semiconductor die and extending across into a scribe grid region of the semiconductor substrate. Another dielectric layer is formed overlying the first dielectric layer. An opening is formed through the first and second dielectric layers. The second dielectric layer is used as a mask for forming a doped region on the semiconductor substrate through the opening. A metal is formed that electrically contacts the doped region and an exterior edge of the first dielectric layer within the opening.

Abstract: A photosensitive resin composition comprising parts by mass of polycondensate (A) having a structure resulting from dehydration condensation between one or two or more tetracarboxylic acid dianhydride and one or two or more armatic diamines having mutually ortho-positioned amino and phenolic hydroxyl groups and 1 to 100 parts by mass of photosensitive diazonaphthoquinone compound (B), wherein the polycondensate (A) has a weight average molecular weight of 3000 to 70,000.

Abstract: Wafer level packages and methods of fabricating the same are provided. In one embodiment, one of the methods comprises forming semiconductor chips having a connection pad on a wafer, patterning a bottom surface of the wafer to form a trench under the connection pad, patterning a bottom surface of the trench to form a via hole exposing the bottom surface of the connection pad, and forming a connecting device connected to the connection pad through the via hole. The invention provides a wafer level package having reduced thickness, lower fabrication costs, and increased reliability compared to conventional packages.

Abstract: An electronics package has a wafer level chip scale package (WLCSP) die substrate containing electronic circuits. Through-silicon vias through the die substrate electrically connect the electronic circuits to the bottom surface of the die substrate. A package sensor is coupled to the die substrate for sensing an environmental parameter. A protective encapsulant layer covers the top surface of the die substrate. A sensor aperture over the package sensor provides access for the package sensor to the environmental parameter.

Abstract: The present invention include a semiconductor device and a method therefor, the method includes disposing a sheet-shaped resin at a side opposite to the chip mounting portion mounting semiconductor chips to be mounted on the chip mounting portion, and forming a resin sealing portion between the sheet-shaped resin and the chip mounting portion, to seal the semiconductor chips. According to an aspect of the present invention, it is possible to provide a semiconductor device and a fabrication method therefor, by which it is possible to reduce the size of the package and to prevent the generation of an unfilled portion in a resin sealing portion or a filler-removed portion or to prevent the exposure of wire from the resin sealing portion.

Abstract: In one embodiment, a method for forming a molded flat pack style package includes attaching electronic chips to an array lead frame, which includes a plurality of elongated flag portions with tab portions and a plurality of leads. The method further includes connecting the electronic chips to specific leads, and then molding the array lead frame while leaving portions of the leads exposed to form a molded array structure. The molded array structure is then separated to provide molded flat pack style packages having exposed leads for insertion mount and exposed tab portions. In an alternative embodiment, the separation step produces a no-lead configuration with exposed tab portions.

Abstract: The present invention relates to a process for producing an acid anhydride-based epoxy resin curing agent, an acid anhydride-based epoxy resin curing agent, an epoxy resin composition, and a cured product and optical semiconductor device using the same. The process for producing an acid anhydride-based epoxy resin curing agent according to the present invention comprises heating a mixture containing a polyvalent carboxylic acid anhydride and a polyester resin in the presence of hydrogen gas and a hydrogenation catalyst.

Abstract: Electronic modules are formed by encapsulating microelectronic dies within cavities in a substrate.

Abstract: An integrated circuit package system with interconnect support is provided including providing an integrated circuit, forming an electrical interconnect on the integrated circuit, forming a contact pad having a chip support, and coupling the integrated circuit to the contact pad by the electrical interconnect, with the integrated circuit on the chip support.

Abstract: A semiconductor component comprising two stacked semiconductor dice and a method of manufacture. A leadframe having an active area that includes leadframe leads and a cavity is mounted to a support material such as an adhesive tape. A packaged semiconductor die that includes a first semiconductor die mounted to a support structure and encapsulated within a mold compound is mounted on the adhesive tape. A second semiconductor die is mounted to the packaged semiconductor die. Bond pads on the second semiconductor die are electrically connected to the leadframe, the support structure on which the first semiconductor die is mounted, or both. A mold compound is formed around the second semiconductor die, portions of the leadframe, and the packaged semiconductor die. The adhesive tape is removed and the leadframe is singulated to form multi-chip packages.

Abstract: A method of manufacturing a semiconductor package involves providing a substrate having a window. The substrate may include a leadframe having half-etched leads. First and second semiconductor devices are mounted to a top surface of the substrate on either side of the window using an adhesive. A third semiconductor device is mounted to the first and second semiconductor devices using an adhesive. The third semiconductor device is disposed over the window of the substrate. A wirebond or other electrical interconnect is formed between the third semiconductor device and a contact pad formed over a bottom surface of the substrate opposite the top surface of the substrate. The wirebond or other electrical interconnect passes through the window of the substrate. An encapsulant is deposited over the first, second, and third semiconductor devices.

Abstract: A semiconductor device and an optical print head, an image forming apparatus that has the semiconductor device are supplied capable of reduce occurrence probability of defect. The semiconductor device is formed by using semiconductor thin film bonded on the substrate, and includes a covering layer that covers at least one part region of the semiconductor thin film and covers at least one part of electroconductive member connecting with the semiconductor thin film.

Abstract: An LED assembly includes a substrate and a plurality of LEDs mounted on the substrate. Each LED comprises an LED die mounted on the substrate via an adhesive, a base spacedly surrounding the LED die, a pair of leads inserted in the base to be in electrical connection with the LED die, and an encapsulant sealing the LED die and inner parts of the leads therein. A thickness of the adhesive is selected to be less than 0.01 inches. The substrate contains a kind of coolant therein to rapidly remove heat from the LED die to atmosphere.

Abstract: A method comprises forming elongate structures (5) on a first substrate (3), such that the material composition of each elongate structure (7) varies along its length so as to define first and second physically different sections in the elongate structures. First and second physically different devices (1,2) are then defined in the elongate structures. Alternatively, the first and second physically different sections may be defined in the elongate structures after they have been fabricated. The elongate structures may be encapsulated and transferred to a second substrate (7). The invention provides an improved method for the formation of a circuit structure that requires first and second physically different devices (1,2) to be provided on a common substrate. In particular, only one transfer step is necessary.

Abstract: A mountable integrated circuit package system includes: providing a substrate having an opening provided therein; providing an encapsulated integrated circuit package having an external leadfinger; mounting the encapsulated integrated circuit package by the external leadfinger proximate to the opening in the substrate; and connecting the external leadfinger and the substrate.