Including Field-effect Component Only (epo) Patents (Class 257/E27.059)
- Combination of depletion and enhancement field-effect transistors (EPO) (Class 257/E27.061)
- Complementary MIS (EPO) (Class 257/E27.062)
- Means for preventing a parasitic bipolar action between the different transistor regions, e.g. latch-up prevention (EPO) (Class 257/E27.063)
- Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS (EPO) (Class 257/E27.064)
- Including an N-well only in the substrate (EPO) (Class 257/E27.065)
- Including a P-well only in the substrate (EPO) (Class 257/E27.066)
- Including both N- and P- wells in the substrate, e.g. twin-tub (EPO) (Class 257/E27.067)