Abstract: A light-scattering substrate which can be thinned and has improved thermal resistance, a method of manufacturing the same, an organic light-emitting display device including the same, and a method of manufacturing the organic light-emitting display device are disclosed. The light-scattering substrate includes a light-scattering layer composed of a plurality of metal nanoparticles which are attached to at least a surface of a substrate. The metal nanoparticles are formed by agglomeration of a metal on the substrate, and show a surface plasmon phenomenon.

Abstract: A light-emitting device includes a plurality of physically separated light-emitting units formed on a single substrate: a contact layer formed on a first side of the light-emitting units ; a first electrode formed on a second side of the light-emitting units: a conductive post formed between the first electrode and the contact layer; an electrical connection structure electrically connecting a first one of the light-emitting units with another a second one of the light-emitting units; a reflective layer formed between the first one of light-emitting units and the first electrode; a first conductive layer comprising a plurality of contacts formed between the first one of the light-emitting units and the reflective layer; and a second conductive layer formed between the reflective layer and the first conductive layer.

Abstract: The present invention is directed to a lighting apparatus. In one embodiment the lighting apparatus includes a plurality of light emitting diode (LED) chips. A first optic is coupled to the plurality of LED chips. A diffuser is coupled to the first optic. In addition, a second optic is coupled to the diffuser.

Abstract: Phototherapy devices for phototherapy treatment of a patient include a light emitter for emitting light received from a light source. Means may be provided for altering the amount of power to the light source in response to a change in light output to maintain a substantially constant light output. The light source may comprise one or more LEDs that generate a blue light output and at least one other LED that generates a different color light output.

Abstract: Provided is a producing of a surface-emitting laser capable of aligning a center axis of a surface relief structure with that of a current confinement structure with high precision to reduce a surface damage during the producing. The producing of the laser having the relief provided on a laminated semiconductor layer and a mesa structure, the process comprising the steps of: forming, on the layer, one of a first dielectric film and a first resist film having a first pattern for defining the mesa and a second pattern for defining the relief and then forming the other one of the films; forming a second resist film to cover the second pattern and expose the first pattern; and forming the mesa by removing the layer under the first pattern using the second resist film.

Abstract: A white organic light emitting device, with improved color shift characteristics and improved efficiency according to viewing angle changes by controlling conditions for designing an optical path in organic material layers between a cathode and an anode or adjusting interior or exterior thicknesses of the organic material layers, has a structure including a first electrode and layers between the first electrode and a second electrode satisfies an optical path condition represented by the following equation n a ? d a ? + ? j ? ? n j w ? d j w ? = 1.85 ? 2.15 with respect to emissions of the first and second stacks, where ? is an emission peak wavelength of the first stack or the second stack, na and da are a refractive index and a thickness of a transparent electrode selected from the first and second electrode, and nw and dw are a refractive index and a thickness of any one of the layers disposed between the first electrode and the second electrode, respectively.

Abstract: A method for manufacturing a semiconductor light emitting apparatus having first semiconductor layer and second semiconductor layer sandwiching a light emitting layer, first and second electrodes provided on respective major surfaces of the first semiconductor and second semiconductor layers to connect thereto, stacked dielectric films having different refractive indexes provided on portions of the major surfaces not covered by the first and second electrodes, and a protruding portion erected on at least a portion of a rim of at least one of the first and second electrodes. The mounting member includes a connection member connected to at least one of the first and second electrodes. The method includes causing the semiconductor light emitting device and a mounting member to face each other, and causing the connection member to contact and join to the at least one of the first and second electrodes using the protruding portion as a guide.

Abstract: An exemplary LED module includes an LED and a lens covering the LED. The lens includes a light-guiding portion over the LED and retaining portions protruding downwardly from the light-guiding portion. The LED includes a substrate, a first electrode and a second electrode mounted on the substrate, and an LED chip electrically connecting the first electrode and the second electrode respectively. Through holes are defined in the first electrode and the second electrode, respectively. Each retaining portion includes a first rugged portion and a second rugged portion. The retaining portions are inserted into the through holes correspondingly, the first rugged portion connects glue filled in a corresponding through hole, and the second rugged portion abuts the substrate, whereby the lens and the substrate are securely connected together.

Abstract: A light emitting device comprising: a substrate, wherein the substrate comprises a first major surface, a second major surface opposite to the first major surface, and a sidewall wherein the entire sidewall is a substantially textured surface with a depth of 10˜150 ?m; and a light emitting stack layer formed on the substrate.

Abstract: A light emitting diode (LED) includes a substrate, a temperature detecting pattern, and a semiconductor structure. The temperature detecting pattern is formed on the substrate. Then the semiconductor structure is formed on the temperature detecting pattern and the substrate. The semiconductor structure includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer. Per above-mentioned structural design, the temperature detecting pattern directly integrated into the LED can measure the actual temperature of PN junction with high precision.

Abstract: In a semiconductor light-emitting device, light from a laser diode is output to the outside after the luminance of the light being enhanced. It includes a support body provided with lead terminals, one or more laser diodes mounted on the support body, a cylindrical reflector fixed to the support body to surround the laser diode(s) and provided with a light reflection surface formed on an inner surface thereof, and a cap placed to cover an opening distal end face of the reflector and held at an opening distal end part of the reflector, the cap being provided at a central part thereof with a solid fluorescent member including a fluorescent substance that is excited by the light from the laser diode and emits light different in colors from light emitted by the laser diode.

Abstract: A semiconductor light emitting device having a light emitting structure including at least one first conductive GaN based semiconductor layer, an active layer above the at least one first conductive GaN based semiconductor layer, and at least one second conductive GaN based semiconductor layer above the active layer, a plurality of patterns disposed from the at least one second conductive GaN based semiconductor layer through a portion of the at least one first conductive GaN based semiconductor layer, and an insulating member on the plurality of patterns. The plurality of patterns include a lower part contacting with the light emitting structure and a upper part contacting with the light emitting structure. A first base angle of the lower part is different from the second base angle of the upper part.

Abstract: The present invention aims to enhance the light extraction efficiency of the Group III nitride semiconductor light-emitting device. The inventive Group III nitride semiconductor light-emitting device comprises a substrate; and a Group III nitride semiconductor layer including a light-emitting layer, stacked on the substrate, wherein the side face of the Group III nitride semiconductor layer is tilted with respect to the normal line of the major surface of the substrate.

Abstract: An electrooptical device includes a substrate, a pixel electrode which is provided on the substrate, a semiconductor element which is provided so as to correspond to the pixel electrode, and a light reflection portion formed with a groove formed on at least a part of the substrate. In the electrooptical device, the semiconductor element is arranged so as to overlap with the light reflection portion in plan view and is arranged on a flattened film provided so as to cover at least an opening of the groove.

Abstract: A semiconductor light emitting device having an n-electrode and a p-electrode provided on the same surface side of a semiconductor film, wherein current spread in the semiconductor film is promoted, so that the improvements in luminous efficiency and reliability, the emission intensity uniformalization across the surface, and a reduction in the forward voltage, can be achieved. The semiconductor light emitting device includes a semiconductor film including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer; the n-electrode formed on an exposed surface of the n-type semiconductor layer exposed by removing parts of the p-type semiconductor layer, of the active layer, and of the n-type semiconductor layer with accessing from the surface side of the p-type semiconductor layer; and the p-electrode. A current guide portion having conductivity higher than that of the n-type semiconductor layer is provided on or in the n-type semiconductor layer over the p-type electrode.

Abstract: Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material.

Abstract: A group III nitride semiconductor light-emitting device includes: a conductive support; a p-electrode positioned on the support, a p-type layer containing a group III nitride semiconductor, an active layer and an n-type layer having a first surface, which are positioned in turn on the p-electrode; and an n-electrode positioned on the first surface of the n-type layer. A groove is formed in the first surface of the n-type layer in a pattern such that the first surface of the n-type layer is continuous. A light-transmitting insulating film is formed on side surface and bottom surface of the groove. The groove has a depth at least reaching the p-type layer. The n-electrode is formed in wiring form.

Abstract: A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device comprises a plurality of projections on the principal surface. Each of the projections has a bottom that has a substantially polygonal shape. Each side of the bottom of the projections has a depression in its center. Vertexes of the bottoms of the respective projections extend in a direction that is within a range of ±10 degrees of a direction that is rotated clockwise by 30 degrees from a crystal axis “a” of the sapphire substrate.

Abstract: A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device comprises a plurality of projections on the principal surface. Each of the projections has a bottom that has a substantially polygonal shape. Each side of the bottom of the projections has a depression in its center. Vertexes of the bottoms of the respective projections extend in a direction that is within a range of ±10 degrees of a direction that is rotated counter-clockwise by 30 degrees from a crystal axis “a” of the sapphire substrate.

Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a first semiconductor layer comprising a plurality of vacant space parts, an active layer on the first semiconductor layer, and a second conductive type semiconductor layer on the active layer. Each of the plurality of air-lenses has a thickness less than that of the first semiconductor layer.

Abstract: A transparent light emitting diode (LED) includes a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers and in multiple directions through the layers. Moreover, the surface of one or more of the III-nitride layers may be roughened, textured, patterned or shaped to enhance light extraction.

Abstract: A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured, thereby forming a textured surface in order to increase light extraction. The texturing may be performed by plasma assisted chemical etching, photolithography followed by etching, or nano-imprinting followed by etching.

Abstract: A photoelectric conversion device comprises a photoelectric conversion layer; a plurality of structures made of a dielectric substance; and a medium layer for transmitting light interposed between the photoelectric conversion layer and the structures or between the structures, or both, wherein the plurality of structures and the medium layer satisfy ndie>nmed and Dave×nmed/?max<0.3, wherein ?max is a maximal sensitivity wavelength at which the sensitivity of the photoelectric conversion layer to light energy is maximal, nmed is a refractive index of the medium layer at the wavelength ?max, ndie is a refractive index of the structures at the wavelength ?max, and Dave is an average of shortest distances between an light exposure surface of the photoelectric conversion layer and the structures.

Abstract: Provided is a light emitting element, a light emitting device including the same, and fabrication methods of the light emitting element and light emitting device. The light emitting device comprises a substrate, a light emitting structure including a first conductive layer of a first conductivity type, a light emitting layer, and a second conductive layer of a second conductivity type which are sequentially stacked, a first electrode which is electrically connected with the first conductive layer; and a second electrode which is electrically connected with the second conductive layer and separated apart from the first electrode, wherein at least a part of the second electrode is connected from a top of the light emitting structure, through a sidewall of the light emitting structure, and to a sidewall of the substrate.

Abstract: An organic light emitting diode (OLED) display according to an exemplary embodiment includes a display substrate on which a plurality of organic light emitting diodes are formed; a conducting material layer contacting one of electrodes included in the organic light emitting diode; an encapsulation substrate facing the display substrate; and an anti-reflective light transmission layer that is formed on a surface of the encapsulation substrate and is connected to the conducting material layer.

Abstract: Provided are a light emitting device and a method for manufacturing the same. The light emitting device comprises a first conductive type semiconductor layer, an active layer, a second conductive type semiconductor layer, and a light extraction layer. The active layer is formed on the first conductive type semiconductor layer. The second conductive type semiconductor layer is formed on the active layer. The light extraction layer is formed on the second conductive type semiconductor layer. The light extraction layer has a refractive index smaller than or equal to a refractive index of the second conductive type semiconductor layer.

Abstract: A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer.

Abstract: A light emitting device is disclosed. The light emitting device includes a first electrode and a second electrode, which have different areas, thereby achieving enhanced bonding reliability.

Abstract: A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped.

Abstract: An optoelectronic semiconductor part comprising a light source, a housing and electrical connections, wherein the optoelectronic semiconductor part comprises a component which contains metal phosphate, and wherein the metal phosphate is substantially alkali-free and halogen-free.

Abstract: A manufacturing method of a semiconductor light emitting element, includes forming sacrifice portions within the width of street portions in a semiconductor laminated body, and performing wet etching to remove the sacrifice portions together with their neighboring portions, thereby removing etching residuals in the streets.

Abstract: A semiconductor light emitting device has a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, and a nitride semiconductor layer on side surfaces of the second conductive semiconductor layer along an outer periphery of the second conductive semiconductor layer. An ohmic layer directly contacts the second conductive semiconductor layer and the nitride semiconductor layer.

Abstract: A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer.

Abstract: A light emitting packaged diode ids disclosed that includes a light emitting diode mounted in a reflective package in which the surfaces adjacent the diode are near Lambertian reflectors. An encapsulant in the package is bordered by the Lambertian reflectors and a phosphor in the encapsulant converts frequencies emitted by the LED chip and, together with the frequencies emitted by the LED chip, produces white light. A substantially flat meniscus formed by the encapsulant defines the emitting surface of the packaged diode.

Abstract: There is provided a polarizer for organic light emitting diodes (OLED) having improved brightness. The polarizer, which comprises a linear polarizer and a ¼ retardation plate, comprises a reflective polarizer film disposed between the linear polarizer and the ¼ retardation plate and transmitting a polarized light horizontal to the transmission axis of the linear polarizer while reflecting a polarized light vertical to the transmission axis of the linear polarizer. The polarizer may be useful to highly improve the brightness of the OLED device when the polarizer is used in the OLED device.

Abstract: An LED package includes an LED die and a lens module. The lens module covers the LED die. Light emitted from the LED die travels through the lens module. The lens module includes a concave lens and a convex lens with a smaller radial dimension than that of the concave lens. The concave lens covers the LED die. The convex lens is attached on a center of a surface of the concave lens away from the LED die. Optical axes of the concave lens and the convex lens are both collinear with a central axis of the LED die. Light from the LED die is diverged by the lens module to a peripheral side of the LED package.

Abstract: A light emitting device includes a support member having a mounting surface. The support member includes an insulating member having top surface and a plurality of side surfaces, a first metal pattern disposed on the top surface of the insulating member, and a second metal pattern disposed on the side surface of the insulating member such that a side surface of the second metal pattern is continuous with a top surface of the first metal pattern. The light emitting device further includes a light emitting element mounted on the mounting surface at a location of the first metal pattern, and a bonding member that bonds the light emitting element to the mounting surface. The bonding member covers at least a portion of the first metal pattern and at least a portion of the second metal pattern.

Abstract: A white LED assembly includes a string of series-connected blue LED dice mounted on a substrate. The substrate has a plurality of substrate terminals. A first of the substrate terminals is coupled to be a part of first end node of the string. A second of the substrate terminals is coupled to be a part of an intermediate node of the string. A third of the substrate terminals is coupled to be a part of a second end node of the string. Other substrate terminals may be provided and coupled to be parts of corresponding other intermediate nodes of the string. A single contiguous amount of phosphor covers all the LED dice, but does not cover any of the substrate terminals. In one example, the amount of phosphor contacts the substrate and has a circular periphery. All the LEDs are mounted to the substrate within the circular periphery.

Abstract: A semiconductor light-emitting device of the invention includes: a semiconductor layer including a light-emitting layer and having a first major surface and a second major surface opposite to the first major surface; a phosphor layer facing to the first major surface; an interconnect layer provided on the second major surface side and including a conductor and an insulator; and a light-blocking member provided on a side surface of the semiconductor layer and being opaque to light emitted from the light-emitting layer.

Abstract: Disclosed are a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises a substrate under a light emitting structure having an active layer. A bottom surface of the substrate includes a first portion and a second portion around the first portion, the first portion includes a first recess and the second portion includes a second recess, and the first recess and the second recess are formed in a direction toward the upper surface from the bottom surface of the substrate. The first recess and the second recess have a different depth from the bottom surface of the substrate, the first recess is formed along a transverse direction and a longitudinal direction in the bottom surface of the substrate, and the first recess and the second recess has a depth smaller than a thickness of the substrate.

Abstract: A lens arrangement for an LED display device includes a lens. The lens has a first lens surface and an optical axis. The optical axis penetrates the first lens surface of the lens. Furthermore, the lens arrangement includes a transparent transition body, which is firmly coupled with the lens on the first lens surface, which is more temperature-resistant than the lens and which has an optical axis that is parallel to the optical axis of the lens.

Abstract: A light emitting device includes a conductive substrate, a plurality of light emitting cells disposed on the conductive substrate, wherein each of the plurality of light emitting device cells includes a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, a protective layer disposed to cover a side of the first semiconductor layer and a side of the active layer, and a first electrode for connecting the second semiconductor layers of more than one of the light emitting cells to each other, wherein the protective layer includes protruding portions extending to an inside of each of the light emitting cells from the side of the first semiconductor layer and the side of the active layer.

Abstract: A display apparatus includes an active device array substrate, an opposite substrate disposed opposite to the active device array substrate, and a display medium disposed between the active device array substrate and the opposite substrate. The opposite substrate includes a first base and a light-shielding structure disposed on the first base and located between the first base and the active device array substrate. The light-shielding structure has a first dielectric layer, a second dielectric layer, a third dielectric layer, a metal layer, a fourth dielectric layer, a fifth dielectric layer, and a sixth dielectric layer stacked sequentially in a direction from the first base to the active device array substrate. The first, second, and third dielectric layers have different thicknesses. The fourth, fifth, and sixth dielectric layers have different thicknesses.

Abstract: The LED lighting device in this invention comprises a light source, a first face sheet, and a reflection sheet. The light source comprises a plurality of LED chips which are configured to emit lights having wavelengths which are different from each other. The first face sheet has a rear surface. The rear surface is defined as a diffusing and reflecting surface which is being configured to diffuse and reflect the lights which are emitted from the LED chips. The first face sheet is provided with a plurality of apertures. The reflection sheet has a second reflecting surface. The second reflecting surface is configured to reflect the light which is reflected from the diffusing and reflecting surface of the first face sheet toward the first face sheet. Each the aperture is shaped to pass the light which is reflected from the second reflecting surface.

Abstract: An object of the present invention is to provide an organic light emitting element where light emitted from the light emitting layer is efficiently emitted to the outside, and thus, the efficiency of light emission is higher. The present invention provides an organic light emitting element where a first reflective electrode 22, an electron transport layer 23, a light emitting layer 24, a hole transport layer 25, a hole injection layer 26 and a second transparent electrode 27 are formed on a glass substrate 21, and a light extraction layer 28 having an average index of refraction of 1.4 made of titanium particles having an index of refraction of 2.6 and an average particle diameter of 150 nm and silica sol.

Abstract: Provided are a light emitting device and a light unit. The light emitting device includes a light emitting structure layer comprising a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer; a first conductive layer having a first portion disposed under the second conductive type semiconductor layer and a second portion electrically connected to the first conductive type semiconductor layer; a second conductive layer under the second conductive type semiconductor layer and electrically connected to the second conductive type semiconductor layer; an insulation layer between the first conductive layer and the second conductive layer; and a tunnel barrier between the first portion of the first conductive layer and the second conductive layer.

Abstract: An LED package includes a base, an LED chip, and an electrode layer. The base has thereon a first electrical connecting layer and a separated second electrical connecting layer. The LED chip is placed on the base and electrically connected with the first electrical connecting layer and the second electrical connecting layer by flip chip bonding. The electrode layer comprises a first electrode and a separated second electrode, and a receiving groove being defined between the first electrode and the second electrode. The base is received in the receiving groove of the electrode layer with the first electrical connecting layer being electrically connected to the first electrode, and the second electrical connecting layer being electrically connected to the second electrode.

Abstract: The invention provides a Group III nitride semiconductor light-emitting device which has a light extraction face at the n-layer side and which provides high light emission efficiency. The light-emitting device is produced through the laser lift-off technique. The surface of the n-GaN layer of the light-emitting device is roughened. On the n-GaN layer, a transparent film is formed. The transparent film satisfies the following relationship: 0.28?n×d1×2/??0.42 or 0.63?n×d1×2/??0.77, wherein n represents the refractive index of the transparent film, d1 represents the thickness of the transparent film in the direction orthogonal to an inclined face thereof, and ? represents the wavelength of the light emitted from the MQW layer.

Abstract: A LED mirror light assembly comprises a body having a through hole configured subject to a predetermined shape and located on a middle part thereof, a film-coated glass configured subject to shape of the through hole and supported on a first step, a LED holder holding a plurality of light-emitting diodes, and a reflector comprising a reflective surface located on a front side thereof and facing toward the light-emitting diodes and a light-shading coating coated on a rear side thereof The reflector being kept in a non-parallel manner relative to the film-coated glass and defining with the film-coated glass a predetermined contained angle so that the light spots of the light-emitting diodes are repeatedly reflected by the reflective back face of the film-coated glass and the reflective surface of the reflector, forming a curved tunnel of light spots.

Abstract: A device to emit light includes a light emitting diode (LED) die and a light guide coupled to the LED die. The light guide includes a first material having a first index of refraction with a plurality of apertures arranged in a grid. A second material having a second index of refraction that is larger than the first index of refraction fills the plurality of apertures. Each aperture extends from a first end adjacent the LED die to a larger second end. The first end may be a circle of approximately 1 to 2 ?m in diameter. The distance between the first and second ends may be from approximately 10 to 20 ?m. Each aperture may be in the form of a frustrated cone having an included angle between the sides from approximately 3 to 7 degrees. The light guide may be formed on a transparent substrate.