Abstract: A backlight module comprises a back plate, a first light source module, and an optical component. The optical component includes a side surface and a bottom surface perpendicularly connected to the side surface. The first light source module comprises a plurality of first LEDs disposed on the back plate and at the side surface of the optical component for emitting light at a first wavelength toward the side surface of the optical component. The light is directed in a specific direction by the optical component and then sent out from an emitting surface. The backlight module further comprises a second light source module. The second light source module comprises a plurality of second LEDs disposed near the bottom surface of the optical component for emitting light at a second wavelength toward the bottom surface of the optical component. Light produced after the light at the first wavelength mixes with the light at the second wavelength becomes white light after passing through the optical component.

Abstract: The light emitting device of the invention comprises a first electrode, a second electrode being light transmitting, and a carrier sandwiched between the first electrode and the second electrode and containing light emitters, wherein the first electrode has a plurality of projections or a pn junction formed with a p-type semiconductor and an n-type semiconductor each on a surface being in contact with the carrier.

Abstract: A nitride semiconductor light emitting device is provided. The nitride semiconductor light emitting device includes a first nitride layer comprising at least N-type nitride layer. An insulating member is formed on the first nitride layer having a predetermined pattern. An active layer is formed in both sides of the insulating member on the first nitride layer to emit light. A second nitride layer is formed in both sides of the insulating member on the active layer and the second nitride layer comprises at least a P-type nitride layer.

Abstract: A method of making a light emitting device includes forming an active layer between first and semiconductor layers of different conductivity types, and forming a transparent conductive layer adjacent the second semiconductor layer. The transparent conductive layer includes a first transparent conductive region contacting a first region of the second semiconductor layer and a second transparent conductive region contacting a second region of the second semiconductor layer. An electrode is formed adjacent the first semiconductor layer in vertical alignment with the second region.

Abstract: A light emitting diode for harsh environments includes a substantially transparent substrate, a semiconductor layer deposited on a bottom surface of the substrate, several bonding pads, coupled to the semiconductor layer, formed on the bottom surface of the substrate, and a micro post, formed on each bonding pad, for electrically connecting the light emitting diode to a printed circuit board. An underfill layer may be provided between the bottom surface of the substrate and the top surface of the printed circuit board, to reduce water infiltration under the light emitting diode substrate. Additionally, a diffuser may be mounted to a top surface of the light emitting diode substrate to diffuse the light emitted through the top surface.

Abstract: An LED package comprises at least one LED that emits LED light in an LED emission profile. The LED package includes regions of scattering particles with the different regions scattering light primarily at a target wavelength or primarily within a target wavelength range. The location of the regions and scattering properties are based at least partially on the LED emission profile. The regions scatter their target wavelength of LED light to improve the uniformity of the LED emission profile so that the LED package emits a more uniform profile compared to the LED emission profile. By targeting particular wavelengths for scattering, the emission efficiency losses are reduced.

Abstract: Proposed is a light-emitting apparatus 200,300,400, comprising a semiconductor light emitting device 220,320,420 and a transparent ceramic body 230,330,430 comprising a wavelength converting material positioned in light receiving relationship to the semiconductor device. The light-emitting apparatus is characterized in that the side surfaces 233,333,433 of the ceramic body 230,330,430 are at an oblique angle 234,334,434 relative its bottom surface 231,331,431. This is especially advantageous to unlock the wave-guide modes inside the body 230,330,430. Consequently the total flux emitted from the light-emitting apparatus 200,300,400 can be enhanced considerably. Alternatively, the brightness of the top surface 232,332,432 of the ceramic body 230,330,430 can be enhanced considerably.

Abstract: A semiconductor light-emitting device includes a reflective electrode on a support; a first cladding layer; a light-emitting layer; a second cladding layer having a terrace structure formed of recesses and protrusions, a light-extracting structure having projections and depressions being formed on top surfaces of the protrusions and bottom surfaces of the recesses; and surface electrodes on the top surfaces of the protrusions.

Abstract: There is provided a photonic crystal light emitting device including: a light emitting structure including first and second conductivity type semiconductor layers and an active layer interposed therebetween; a transparent electrode layer formed on the second conductivity type semiconductor layer, the transparent electrode layer having a plurality of holes arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, whereby the transparent electrode layer includes a photonic crystal structure; and first and second electrode electrically connected to the first conductivity type semiconductor layer and the transparent electrode layer, respectively. The photonic crystal light emitting device has a transparent electrode layer formed of a photonic crystal structure defined by minute holes, thereby improved in light extraction efficiency.

Abstract: Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer divided in plurality on the first conductive type semiconductor layer, and a second conductive type semiconductor layer divided in plurality on the active layer.

Abstract: A thin-type light emitting diode lamp includes a blue light emitting diode chip (6) disposed at a substantial center of an inner bottom surface of a groove-shaped recess (3) formed at an end surface and having a thin elongated rectangular opening, a red light conversion layer (7) covering the blue light emitting diode chip (6) and made of a light-transmitting synthetic resin containing powder of a red fluorescent material which emits red light when excited by blue light emitted from the blue light emitting diode chip, and a green light conversion layer (10) made of a light-transmitting synthetic resin containing powder of a green fluorescent material which emits green light when excited by the blue light. The light emitting diode lamp further includes a light transmitting layer (9) intervening between the red light conversion layer (7) and the green light conversion layer (10).

Abstract: A light emitting device package is provided which may prevent a Zener element mounted on an electrode from being positioned on an inclined plane of a cavity. The light emitting device package may include a light emitting device mounted on a first electrode, a Zener element mounted on a second electrode, and a body having cavity inclined planes that form a cavity on the first and second electrodes. The cavity inclined planes may include a first cavity inclined plane adjacent to the Zener element. The first cavity inclined plane may include an inclined plane forming a first inclination angle with respect to the second electrode and an interfacing plane forming a second inclination angle with respect to the second electrode, the second inclination angle being different from the first inclination angle.

Abstract: A luminous means includes a first group of semiconductor chips and a second group of semiconductor chips, each group includes at least one semiconductor chip, wherein the first and second groups of semiconductor chips are arranged laterally alongside one another at least in part with respect to a main emission direction of the luminous means, and a third group of semiconductor chips which includes at least one semiconductor chip and is disposed downstream of the first and the second group with respect to the main emission direction, wherein each group of semiconductor chips emits electromagnetic radiation in wavelength ranges that differ from one another in pairs, radiation emitted by the third group of semiconductor chips has the shortest-wave wavelength range, radiation emitted by the first and second group of semiconductor chips at least partly passes into the at least one semiconductor chip of the third group, and mixed radiation is emitted by an emission area of the luminous means.

Abstract: The present invention relates to a light emitting device, comprising: a LED die (10) having a first surface (12), a second surface (14) and at least one side facet (16) connecting the first and the second surface (12, 14). Further, the LED die comprises a light polarizing layer (20), a light blocking layer (30), and a light reflecting layer (40). The light polarizing layer (20) is arranged on the first surface (12), the light blocking layer (30) is arranged on the at least one side facet (16), and the light reflecting layer (40) is arranged on the second surface (14) of the LED die.

Abstract: The invention discloses an AlGaInP-based LED with double reflective layers and a fabrication method thereof. The method includes: providing a temporary substrate; forming an epitaxial layer on a front of the temporary substrate; forming a distributed Bragg reflector on the epitaxial layer; forming an some openings in the distributed Bragg reflector, such that the arrangement of the distributed Bragg reflector is grid-like and a portion of a top of the epitaxial layer is exposed; forming a reflective metal layer on the distributed Bragg reflector and on the exposed portion of the top of the epitaxial layer, to fill the openings; bonding a permanent substrate onto the reflective metal layer; removing the temporary substrate; forming a first electrode and a second electrode at a bottom of the epitaxial layer and a top of the permanent substrate, respectively; and dicing to obtain the AlGaInP-based LED chips.

Abstract: The present application discloses a light-emitting semiconductor device including a transparent layer having an upper surface, a lower surface, and a sidewall; a wavelength conversion structure arranged on the upper surface; an epitaxial structure arranged on the lower surface and having a side surface devoid of the transparent layer and the wavelength conversion structure; and a reflective wall arranged to cover the sidewall.

Abstract: The present disclosure provides methods of using quantum dots or Q dots or a similar nanocrystal to transfer, for example, excess LED light energy in the blue band to the red band where such LEDs tend to be deficient. This approach would balance the overall spectrum of the LED without a corresponding loss in brightness as would be the case where the light from the LED was passed through a conventional filter. The Q dots could be applied to the lens portion of the LED after the high temperature processes are completed or coated to a clear filter to be placed in the LED light path.

Abstract: A light-transmissive member has a first principal face, a second principal face, and side faces. The first principal face has a first portion including a center of the first principal face and a second portion between the first portion and the side face sides. The member includes a plurality of altered portions formed between the first principal face and the second principal face so that the plurality of altered portions do not appear on the first principal face, the second principal face, and the side faces. Orthogonal projections of the plurality of altered portions onto the first principal face are included in the second portion.

Abstract: An opto-electronic device, and a method of fabricating same, wherein the device has a patterned layer that includes a patterned, pierced or perforated mask, and an active layer formed over the patterned layer, wherein a refractive index of the patterned layer and a pattern of holes in the patterned layer are configured for controlling confinement or extraction of light emissions of the active layer into radiative and guided modes.

Abstract: An optical device for a semiconductor based lamp includes a base and a semiconductor based light-emitting device mounted on the base. A transparent body encapsulates the semiconductor based light-emitting device. A reflective surface is in contact with the transparent body and covers a predetermined region on a top of the transparent body. The reflective surface has an opening. At least a portion of the transparent body protrudes through the opening in the reflective surface. Light emitted from the semiconductor based light-emitting device transmits upwardly through the opening in the reflective surface.

Abstract: An apparatus comprises a display backlight having a substrate and a plurality of light-receiving channels formed in that substrate. At least some of these channels have a depth that varies as a gradient along a longitudinal axis of the channel that is substantially axially aligned with a light-receiving input for the channel. These channels can be formed substantially parallel to one another. The aforementioned light-receiving inputs can, if desired, be formed at either end of each such channel and can be disposed inwardly of an edge of the substrate. Also if desired, at least some of these channels can be disposed other than at an orthogonal angle with respect to such substrate edges. So configured, light rays that orthogonally enter the light-receiving inputs will have an opportunity to contact the edges of the channels and be reflected outwardly of the channel to provide the desired backlighting effect.

Abstract: Provided are a light emitting device and a light unit. The light emitting device includes a light emitting structure layer comprising a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer; a first conductive layer having a first portion disposed under the second conductive type semiconductor layer and a second portion electrically connected to the first conductive type semiconductor layer; a second conductive layer under the second conductive type semiconductor layer and electrically connected to the second conductive type semiconductor layer; an insulation layer between the first conductive layer and the second conductive layer; and a tunnel barrier between the first portion of the first conductive layer and the second conductive layer.

Abstract: A light emitting device may comprise a first semiconductor layer having a first and second surfaces, the first and second surfaces being opposite surfaces, the first semiconductor layer having a plurality of semiconductor columns extending from the second surface, the plurality of semiconductor columns being separated from each other; a light emitting structure formed over the first semiconductor layer, the light emitting structure including a first conductive semiconductor layer, an active layer and a second semiconductor layer, the light emitting structure having a side surface and an exposed side surface of a semiconductor column closest to the side surface of the light emitting structure being non-aligned with the side surface of the light emitting structure; and a substrate provided adjacent to the plurality of semiconductor columns.

Abstract: A method of making a light emitting diode (LED) having an optical element is provided, comprising: providing a curable liquid polysiloxane/TiO2 composite, which exhibits a refractive index of >1.61 to 1.7 and which is a liquid at room temperature and atmospheric pressure; providing a semiconductor light emitting diode die having a face, wherein the semiconductor light emitting diode die emits light through the face; contacting the semiconductor light emitting diode die with the curable liquid polysiloxane/TiO2 composite; and, curing the curable liquid polysiloxane/TiO2 composite to form an optical element; wherein at least a portion of the optical element is adjacent to the face.

Abstract: Multi-chip light emitting diodes and method for fabricating the same are provided. The multi-chip light emitting diode includes a lead frame including a carrier part. A plurality of chips is disposed on the carrier part, wherein the plurality of chips includes a first chip and a second chip. A first scattering layer is conformally covering the first chip to expose electrodes thereof, wherein the first scattering layer consists of a first scattering material. A second scattering layer is conformally covering the second chip to expose electrodes thereof, wherein the second scattering layer consists of a second scattering material.

Abstract: A light emitting diode (LED) package including a carrier, at least one LED chip, and a light guide element is provided. The LED chip is disposed on the carrier. The light guide element including a light transmissive body, a light integration part, a reflective film, and a support part is disposed on the carrier and above the LED chip. The light integration part connected to the light transmissive body and disposed between the light transmissive body and the LED chip has a light incident surface facing the LED chip and at least one side. The side connects the light transmissive body and the light incident surface. The reflective film is disposed on the side. The support part leaning on the carrier is connected to the light transmissive body and surrounds the light integration part. The light transmissive body, the light integration part, and the support part are integrally formed.

Abstract: Three dimensionally integrated semiconductor systems include a photoactive device operationally coupled with a current/voltage converter on a semiconductor-on-insulator (SeOI) substrate. An optical interconnect is operatively coupled to the photoactive device. A semiconductor device is bonded over the SeOI substrate, and an electrical pathway extends between the current/voltage converter and the semiconductor device bonded over the SeOI substrate. Methods of forming such systems include forming a photoactive device on an SeOI substrate, and operatively coupling an waveguide with the photoactive device. A current/voltage converter may be formed over the SeOI substrate, and the photoactive device and the current/voltage converter may be operatively coupled with one another. A semiconductor device may be bonded over the SeOI substrate and operatively coupled with the current/voltage converter.

Abstract: A semiconductor light emitting device comprises a substrate for mounting at least one light emitting element, a reflective film formed on the substrate, an edge of which rises perpendicularly to a surface of the substrate, and at least one light emitting element. A decrease in a reflected luminous flux from a reflective film can be restrained.

Abstract: According to one embodiment, a semiconductor light emitting device having a base, a mounting material and a chip of a semiconductor light emitting element is provided. The mounting material is provided on the base. The chip of the semiconductor light emitting element is fixed onto the base via the mounting material. The chip of the semiconductor light emitting element is provided with a sapphire substrate, an active region, a light shielding portion and anode and cathode electrodes for supplying an electric power to the active region. The active region is provided on the sapphire substrate and has a light emitting layer for emitting light by supplying electric power. The light shielding portion is formed on the sapphire substrate on the side of the mounting material. The light shielding portion prevents the mounting material from being irradiated with the light produced in the light emitting layer.

Abstract: Example embodiments herein relate to a nitride semiconductor light emitting device including a coat film formed at a light emitting portion and including an aluminum nitride crystal or an aluminum oxynitride crystal, and a method of manufacturing the nitride semiconductor light emitting device. Also provided is a nitride semiconductor transistor device including a nitride semiconductor layer and a gate insulating film which is in contact with the nitride semiconductor layer and includes an aluminum nitride crystal or an aluminum oxynitride crystal.

Abstract: The invention provides a compound semiconductor light-emitting element including: a substrate on which an n-type semiconductor layer (12), a light-emitting layer (13), and a p-type semiconductor layer (14) that are made of a compound semiconductor are stacked in this order; a positive electrode (15) made of a conductive translucent electrode; and a negative electrode (17) made of a conductive electrode, wherein the conductive translucent electrode of the positive electrode (15) is a transparent conductive film containing crystals composed of In2O3 having a hexagonal crystal structure.

Abstract: There is provided a nitride semiconductor light emitting device having a light emitting portion coated with a coating film, the light emitting portion being formed of a nitride semiconductor, the coating film in contact with the light emitting portion being formed of an oxynitride. There is also provided a method of fabricating a nitride semiconductor laser device having a cavity with a facet coated with a coating film, including the steps of: providing cleavage to form the facet of the cavity; and coating the facet of the cavity with a coating film formed of an oxynitride.

Abstract: According to one embodiment, a light emitting device includes a semiconductor light emitting element to emit a first light, a mounting member, first and second wavelength conversion layers and a transparent layer. The first wavelength conversion layer is provided between the element and the mounting member in contact with the mounting member. The first wavelength conversion layer absorbs the first light and emits a second light having a wavelength longer than a wavelength of the first light. The semiconductor light emitting element is disposed between the second wavelength conversion layer and the first wavelength conversion layer. The second wavelength conversion layer absorbs the first light and emits a third light having a wavelength longer than the wavelength of the first light. The transparent layer is provided between the element and the second wavelength conversion layer. The transparent layer is transparent to the first, second, and third lights.

Abstract: A light emitting device has a light emitting layer having a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type, and an active layer sandwiched between the first semiconductor layer and the second semiconductor layer, a reflecting layer provided on a side of one surface of the light emitting layer, which reflects a light emitted from the active layer, a supporting substrate provided on an opposite side of the reflecting layer with respect to the light emitting layer, which supports the light emitting layer via an adhesion layer, an ohmic contact portion provided on a part of the reflecting layer, which electrically connects between the reflecting layer and the light emitting layer, and convexo-concave portions formed on other surface of the light emitting layer and side surfaces of the light emitting layer, respectively, and an insulating film configured to cover the convexo-concave portions.

Abstract: A light-emitting device includes a substrate, a light-emitting structure on the substrate, the light-emitting structure including a first semiconductor layer, an active layer and a second semiconductor layer, a light-transmitting electrode layer on the second semiconductor layer, and a first reflective layer on the light-transmitting electrode layer, wherein the first reflective layer includes a first layer having a first index of refraction and a second layer having a second index of refraction different from the first index of refraction. Based on this configuration, it is possible to protect the light-emitting device and improve luminous efficiency thereof.

Abstract: A semiconductor light-emitting element including a semiconductor substrate having a first surface and second surface faced on the opposite side of the first surface, the semiconductor substrate having a recessed portion formed in the first surface, and the recessed portion having a V-shaped cross-section, a reflecting layer formed on an inner surface of the recessed portion, a first electrode formed on the reflecting layer, a light-emitting layer formed on the second surface, and a second electrode formed on the light-emitting layer.

Abstract: A tilted wave semiconductor diode laser containing additional structural elements that improve beam quality is provided. The tilted wave laser includes a narrow active waveguide coupled to a broad passive waveguide, and light generated in the active waveguide leaks to the broad waveguide and propagates in it in the form of a tilted optical wave. The device emits laser light coming out from the broad waveguide in the form of one or two narrow beams. The additional structural elements may include grooves intersecting the narrow waveguide and a stripe that suppress undesired emission from the narrow waveguide; grooves that extend parallel to the stripe that suppress parasitic lateral optical modes; unpumped sections of the stripe that suppress light emission from the narrow waveguide; and facet coatings having distinct reflectance for the light in the narrow and in the broad waveguides thus suppressing emission of light from the narrow waveguide.

Abstract: A display device includes: an optical cavity portion; and a light emitting layer, wherein a peak wavelength of an internal emission spectrum of the light emitting layer is identical to a peak wavelength of a multiple interference filter spectrum of the optical cavity portion, and wherein a color shift ? uv of white light in the display device at a viewing angle of 60° is less than or equal to 0.015. A method of adjusting a color shift of white light in a display device includes: setting a peak wavelength of a multiple interference filter spectrum obtained by an optical cavity portion in the display device equal to a peak wavelength of an internal emission spectrum of a light emitting layer in the display device; and adjusting a position of the light emitting layer in a thickness direction thereof.

Abstract: There is herein described a lighting device including at least one LED and a wavelength converter. The wavelength converter includes a supporting plate, a plurality of first host sites and a plurality of second host site. The supporting plate is disposed over the LED. The plurality of the first host sites is disposed directly on a surface of the supporting plate. Each of the plurality of first host sites consists essentially of a first matrix and a plurality of first quantum dots dispersed in the first matrix. The first quantum dots have a first common emission peak wavelength. The plurality of the second host sites is disposed directly on the surface of the supporting plate. Each of the plurality of second host sites consists essentially of a second matrix and a plurality of second quantum dots dispersed in the second matrix. The second quantum dots have a second common emission peak wavelength. The second common emission peak wavelength is different from the first common emission peak wavelength.

Abstract: A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.

Abstract: A wavelength conversion particle 7 used for a wavelength conversion member 70 is provided with a moth-eye structure section 74 having a fine concavo-convex structure in the side of a surface of a fluorescent particle 71, and the fine concavo-convex structure is formed in fluorescent particle 71 itself. Wavelength conversion member 70 is formed by dispersing wave-length conversion particle(s) 7 into a translucent medium 73 having a smaller refraction index than fluorescent particle 71 of wavelength conver-sion particle 7. Wavelength conversion member 70 is further provided with an antireflection section 76 in the side of the surface of fluorescent particle 71. Antireflection section 76 comprises moth-eye structure section 74 and translucent medium 73 entered between taper-shaped fine projections 75 of moth-eye structure section 74.

Abstract: A light emitting diode package includes a mount, a plurality of LED chips, and a first and a second sealants made of different materials. The mount has an accommodation space and at least one partition member to divide the accommodation space into a plurality of separate cavities. The LED chips are placed in the cavities, and emitting beams of the LED chips exiting through the cavities include a first emission with a first wavelength band and a second emission with a second wavelength band, and the second wavelength band is different to the first one. The first and the second sealants are respectively used for sealing at least one of the LED chips placed in at least one of the cavities through which the first or the second emission exits. The first and the second sealants are separate from each other by the partition member.

Abstract: A FET is formed on a semiconductor substrate, a curved surface having a radius of curvature is formed on an upper end of an insulation, a portion of a first electrode is exposed corresponding to the curved surface to form an inclined surface, and a region defining a luminescent region is subjected to etching to expose the first electrode. Luminescence emitted from an organic chemical compound layer is reflected by the inclined surface of the first electrode to increase a total quantity of luminescence taken out in a certain direction.

Abstract: A light emitting diode comprises a multi-layer semiconductor, a first electrode and a second electrode. The multi-layer semiconductor has a light emitting active layer substantially perpendicular to the predetermined surface, a first semiconductor layer located on a surface of the light emitting active layer and a second semiconductor layer located on an opposite surface of the light emitting active layer. The first electrode is provided adjacent to and electrically connect to the first semiconductor layer. The second electrode is provided adjacent to and electrically connect to the second semiconductor layer. In addition, a method of fabricating LED element and a light emitting device having the LED elements are provided.

Abstract: A light emitting device, a wafer for making the same, and method for fabricating the same are disclosed. The device and wafer include a first layer of a first conductivity type, an active layer, and a layer of a second conductivity type. The active layer overlies the first layer, the active layer generating light. The second layer overlies the active layer, the second layer having a first surface in contact adjacent to the active layer and a second surface having a surface that includes features that scatter light striking the second surface. A layer of transparent electrically conducting material is adjacent to the second surface and covered by a first layer of a dielectric material that is transparent to the light generated by the active layer. A mirror layer that has a reflectivity greater than 90 percent is deposited on the first layer of dielectric material.

Abstract: A method for manufacturing a semiconductor light emitting apparatus includes causing a semiconductor light emitting device and a mounting member to face each other.

Abstract: There is provided a polarizer for organic light emitting diodes (OLED) having improved brightness. The polarizer, which comprises a linear polarizer and a ¼ retardation plate, comprises a reflective polarizer film disposed between the linear polarizer and the ¼ retardation plate and transmitting a polarized light horizontal to the transmission axis of the linear polarizer while reflecting a polarized light vertical to the transmission axis of the linear polarizer. The polarizer may be useful to highly improve the brightness of the OLED device when the polarizer is used in the OLED device.

Abstract: A method for the manufacture of a wavelength converted light emitting device is provided. A light curable coating material is arranged on the outer surface of a wavelength converted light emitting diode. The light curable coating material is cured, in positions where a high intensity of unconverted LED-light encounters the curable coating material. The method can be used to selectively stop unconverted light from exiting the device, leading to a wavelength converted LED essentially only emitting converted light.

Abstract: An arrangement of light sources is attached to a semiconductor wavelength converter. Each light source emits light at a respective peak wavelength, and the arrangement of light sources is characterized by a first range of peak wavelengths. The semiconductor wavelength converter is characterized by a second range of peak wavelengths when pumped by the arrangement of light sources. The second range of peak wavelengths is narrower than the first range of peak wavelengths. The semiconductor wavelength converter is characterized by an absorption edge having a wavelength longer than the longest peak wavelength of the light sources. The wavelength converter may also be used for reducing the wavelength variation in the output from an extended light source.

Abstract: An organic light-emitting display device including: a substrate; a plurality of pixels each including a first electrode, a second electrode, and an organic emission layer interposed between the first electrode and the second electrode; and a black matrix-containing neutral density (ND) film formed in a direction in which light is emitted from the plurality of pixels.