Abstract: A method of making a circuitized substrate including a resistor comprised of material which includes a polymer resin and a quantity of nano-powders including a mixture of at least one metal component and at least one ceramic component. The ceramic component may be a ferroelectric ceramic and/or a high surface area ceramic and/or a transparent oxide and/or a dope manganite. Alternatively, the material will include the polymer resin and nano-powders, with the nano-powders comprising at least one metal coated ceramic and/or at least one oxide coated metal component. An electrical assembly (substrate and at least one electrical component) and an information handling system (e.g., personal computer) utilizing such a circuitized substrate are also provided.

Abstract: An electronic device including a breakdown layer having variable thickness. The device includes a variable resistance material positioned between two electrodes. A breakdown layer is interposed between the variable resistance material and one of the electrodes. The breakdown layer has a non-uniform thickness, which serves to bias the breakdown event toward the thinner portions of the breakdown layer. As a result, the placement, size, and number of ruptures in the breakdown layer are more consistent over a series or array of devices. The variable resistance material may be a phase-change material. The variable-thickness breakdown layer may be formed through a diffusion process by introducing a gas containing a resistivity-enhancing species to the environment of segmented variable resistance devices during fabrication. The resistivity-enhancing element penetrates the outer perimeter of the variable resistance material and diffuses toward the interior of the device.

Abstract: A switchable integrated electronic device includes at least three elements r1 . . . r14, s1 . . . s14 series coupled in a chain between a first port and a second port and includes a node between successive elements r1 . . . r14, s1 . . . s14 of the chain. There is a switch means for coupling a selectable one of the nodes to a third port. If successive elements r1 . . . r14, s1 . . . s14 in the chain are denoted ri, i=1 to N, and if adjacent positions occupied by the elements are numbered consecutively 1 to N, then element ri occupies position ? N + 1 2 ? + ( - 1 ) i · 2 · ? i 2 ? ? ? ? for ? ? i = 1 ? ? to ? ? ? N 2 ? and position ? N + 1 2 ? + ( - 1 ) i · ( 2 · ? N - i 2 ? + 1 ) ? ? for ? ? i = ? N 2 ? + 1 ? ? to ? ? N .

Abstract: A temperature probe assembly is provided. The temperature probe assembly may comprise a housing formed of a first thermally conductive material and having an inner diameter defined by an inner bore, an insert formed of a second thermally conductive material disposed in the inner bore and having an outer diameter that is substantially equal to the inner diameter of the housing at a first temperature and a temperature sensor mounted within the insert. The second thermally conductive material has a thermal coefficient of expansion that is greater than the first thermally conductive material, such that the insert is insertable into the inner bore at the first temperature and is tightly locked in the inner bore at a second temperature that is greater than the first temperature.

Abstract: Disclosed is a fabrication method of an element with nanogap electrodes including a first electrode, a second electrode provided above the first electrode, and a gap provided between the first electrode and the second electrode, the gap being in an order of nanometer to allow resistive state to be switched by applying a predetermined voltage between the first electrode and the second electrode, the method comprising: forming the first electrode; forming a spacer on an upper surface of the first electrode; forming the second electrode in contact with an upper surface of the spacer; and removing the spacer to form the gap.

Abstract: A slim mouse for mobile appliances includes a lower polymer film having a metal layer on an upper surface of the lower polymer film, an upper polymer film having a metal layer on a lower surface of the upper polymer film, a donut force sensor array including multiple force sensors, a weight-bumper spacer including a donut sensor portion and a click-detection sensor portion, a pad including a donut sensor portion and a click-detection sensor portion, and a click-detection force sensor.

Abstract: A metal strip resistor includes a resistor body having a resistive element formed from a strip of an electrically resistive metal material and a first termination electrically connected to the resistive element to form a first junction and a second termination electrically connected to the resistive element to form a second junction, the first termination and the second termination formed from strips of electrically conductive metal material. The resistive element, the first termination, and the second termination being arranged mitigate thermally induced voltages between the first junction and the second junction.

Abstract: The object of the invention is to provide a method and an apparatus that allow production of metal plate chip resistors having a relatively low resistance with high accuracy and yield through simple process. The object is achieved by apparatus 10 for manufacturing metal plate chip resistors including cutting mold 21 for cutting intermediate product strip 14 transversely to obtain worked product chip 16a, ohm meter 22 for measuring the resistance of the worked product chip 16a, control device 23 having a calculating part for performing a calculation using the resistance measured by the ohm meter 22 to work out a width in which the strip 14 is to be cut transversely so as to obtain a worked product chip of a desired resistance, and cutting width adjusting means 26, 27 for making an adjustment so that the strip 14 is to be cut transversely in the width obtained from the calculating part.

Abstract: A variable resistance device comprises a resistive member having a resistive resilient material. A first conductor is configured to be electrically coupled with the resistive member at a first contact location over a first contact area. A second conductor is configured to be electrically coupled with the resistance member at a second contact location over a second contact area. The first contact location and second contact location are spaced from one another by a distance. The resistance between the first conductor at the first contact location and the second conductor at the second contact location is equal to the sum of a straight resistance component and a parallel path resistance component. At least one of the first location, the second location, the first contact area, and the second contact area is changed to produce a change in resistance between the first conductor and the second conductor.

Abstract: A passive electrical article includes a first electrically conductive substrate having a major surface and a second electrically conductive substrate having a major surface. The major surface of the second substrate faces the major surface of the first substrate. An electrically resistive layer is on at least one of the major surface of the first substrate and the major surface of the second substrate. An electrically insulative layer is between the first and second substrates and in contact with the electrically resistive layer. The insulative layer is a polymer having a thickness ranging from about 1 ?m to about 20 ?m. The insulative layer has a substantially constant thickness.

Abstract: A mass flow sensor is manufactured by a process of carrying out a micro-machining process on an N or lightly doped P-type silicon substrate with orientation <100>. This mass flow sensor comprises a central thin-film heater and a pair of thin-film heat sensing elements, and a thermally isolated membrane for supporting the heater and the sensors out of contact with the substrate base. The mass flow sensor is arranged for integration on a same silicon substrate to form a one-dimensional or two-dimensional array in order to expand the dynamic measurement range. For each sensor, the thermally isolated membrane is formed by a process that includes a step of first depositing dielectric thin-film layers over the substrate and then performing a backside etching process on a bulk silicon with TMAH or KOH or carrying out a dry plasma etch until the bottom dielectric thin-film layer is exposed.

Abstract: There is provided a method of producing a printed circuit board incorporating a resistance element capable of adjusting resistance after the resistance element has been formed and assuring a high accurate resistance. A method of producing a printed circuit board incorporating a resistance element using carbon paste includes the steps of: forming through holes 5, 6, 25 and 26 or a bottomed hole in a double-sided copper clad laminate; applying noble metal plating into the through hole or the bottomed hole; filling the through hole or the bottomed hole with carbon paste; subjecting the carbon paste with which the thorough hole or the bottomed hole is filled to noble metal plating, conducting treatment and plating to form a conductive layer; forming an opening 18 in the conductive layer on the end of the through hole filled with the carbon paste; and performing trimming through the opening to adjust the resistance of the resistor formed by the carbon paste.

Abstract: A strip-form silicon carbide furnace heating element is provided having a higher radiating surface area to volume ratio than a conventional tubular element.

Abstract: A substrate including a surface on which is provided a modifying layer which is incomplete and has a distribution such as to provide a plurality of islands of said material and/or islands of substrate surface whereby the surface exhibits a modified electrical and/or magnetic property.

Abstract: In the case where a variable resistive element, which is made of a variable resistor provided between a first and second electrodes, and of which the electrical resistance varies by applying a voltage pulse between the two electrodes, is applied to a resistance nonvolatile memory, there is a range of the resistance value of the variable resistive element in a low resistance state where the nonvolatile memory can operate normally. In the conventional manufacturing method the resistance value of the variable resistive element is too low, therefore, it can not be controlled within a desired range of the resistance value. A step of carrying out of a reduction process is provided at any point after the step of forming a variable resistor material as a film, it has thereby become possible to increase the resistance value of the variable resistive element, which is too low in the conventional method.

Abstract: An electronic component substrate (1-1) includes an insulating base (10) and a flexible circuit board (20) mounted on the insulating base (10). The flexible circuit board (20) is a synthetic resin film provided thereon with terminal patterns (29) and a conductor pattern (25) whose surface is slidingly contacted with a slider. The insulating base (10) is a synthetic resin molded piece. The flexible circuit board (20) is insert-molded to the insulating base (10). The electronic component substrate (1-1) is produced by preparing the flexible circuit board (20) and first and second mold members (41, 45) having a cavity (C1) with a shape that corresponds to the external shape of the electronic component substrate (1-1). Then, the flexible circuit board (20) is accommodated in the cavity (C1) between the first and second mold members (41,45), and the cavity (C1) is filled with a molten molding resin. After the molding resin has solidified, the first and second mold members (41, 45) are removed.

Abstract: A method of evaluating laser trimming of a semiconductor device having a thin film resistor is disclosed. The method includes the steps of providing the thin film resistor and laser trimming the thin film resistor by creating a first trim cut. The first trim cut bisects the thin film resistor such that the thin film resistor is divided into a first portion and a second portion. Also, the method involves measuring the insulation resistance of the thin film resistor. In addition, the method involves evaluating the trim cut based on the measured insulation resistance.

Abstract: A heating element of a printhead has a conductive layer deposited over a substrate, and a resistive layer deposited over and in electrical contact with the conductive layer.

Abstract: A thin film resistor (5) of an integrated circuit comprises an elongate resistive film (7) extending between electrical contact pads (10,11). A low impedance element (20) overlays and is electrically coupled to a portion of the resistive film (7) in an intermediate portion (22) thereof adjacent a second side edge (17) of the resistive film (7) for conducting current in parallel with the intermediate portion (22), and for reducing current density in the intermediate portion (22). First and second transverse edges (28,29) formed by spaced apart first and second slots (26,27) which extend from a first side edge (16) into the resistive film (7) define with a first side edge (16) of the resistive film (7) and the low impedance element (20) first and second trimmable areas (30,31) in the intermediate portion (22).

Abstract: The present invention is a process for fabricating a cloth-like heating element with two pairs of electrical conductors and parallel circuits which are formed via a severing process. A pair of electrical conductors, which looks as a twin belt aligned in parallel, is fabricated on both edges of the heating element by the weaving process; Severing predetermined portions of the inner electrical conductor in order to increase the electrical resistance of heating wires, the pertinent heating wires are connected in series circuitry with each side of the outer electrical conductors; and the heating element is completed when the said process of series linkage is continuously carried out in parallel alignment in accordance with predetermined design.

Abstract: A compound resistor is used to compensate for trimming induced shift in temperature coefficient of resistance of a trimmable resistor. The compound resistor is composed of a first and second portion, at least one of the two portions being thermally trimmable, and the parameters for the first and second portion are selected such that the trimming induced shift can be minimized on an overall resistance and temperature coefficient of resistance of the compound resistors by trimming the trimmable resistor. The invention also allows for exploring trimming range available via true thermal trimming without actually trimming out resistor's value of a resistor. The invention also allows design of thermal isolation to minimize or optimize resistance variation of the overall compound resistance.

Abstract: The present invention relates to a method for manufacturing a SrTiO3 series varistor using grain boundary segregation, and more particularly, to a method for manufacturing a SrTiO3 series varistor by sintering a powdered composition in which acceptors such as Al and Fe are added in powdered form and then sintered under a reducing atmosphere and heat-treated them in the air to selectively form electrical conduction barriers at grain boundaries in a process for manufacturing SrTiO3 series varistor having an excellent non-linear coefficient and a breakdown voltage suitable for use.

Abstract: The present invention relates to a self-regulating electrical resistance heating element, to an appliance containing same, and to processes for their manufacture. The self regulating electrical resistance heating element (10) comprises a substrate (12) comprising an electrically conductive coating (12a) which serves as a first electrical contact (18) on one side of the composite metal oxide layers. Disposed on said electrically conductive layer (12a) is a first metal oxide (14) which has a positive temperature coefficient of resistance. Overlaying the first metal oxide layer, and in electrical series thereto, is a second metal oxide layer (16) having a negative temperature coefficient of resistance and overlaying this layer is a second electrical contact (20). The second metal oxide layer (16) having a negative temperature coefficient of resistance is applied to the element in a manner which ensures it's resistive characteristics are not altered.

Abstract: There are described various methods and circuits for trimming the parameter value of a thermally mutable electrical component in two directions. A sequence of heat pulses is selected as a function of thermal history using an adaptive trimming algorithm, where parameters of the sequence of heat pulses are based on a resulting impact of previous heating pulses. Direction of trimming, trimming increment, and remaining trimming distance can all be used to determine the parameters of succeeding heat pulses, wherein the parameters of the pulses can be, for example, amplitude, duration, and time interval between pulses.

Abstract: A method for manufacturing an equalizer used to compensate a digital signal passed by a transmission line, in which the digital signal can be presented as a frequency-domain function. The method includes measuring a the transmission line scattering-parameter; performing an integration and a differentiation about the transmission line scattering-parameter, the frequency-domain function, the ideal gain, and an equalizer scattering-parameter to get the component impedances of the equalizer; and manufacturing the equalizer circuit with the derived component impedances.

Abstract: There is described methods and circuits for trimming a temperature coefficient of change of a parameter of at least one electrical component while maintaining a substantially constant parameter value, the method comprising applying a heating cycle to trim said parameter value away from a target parameter value and back to said target parameter value, whereby the temperature coefficient of change is modified after applying said heating cycle.

Abstract: A variable resistor element comprising a first electrode, a second electrode, and a variable resistor positioned between the first and second electrodes, and changing in electric resistance when a voltage pulse is applied between the both electrodes, has posed problems that it has a restriction of having to use noble metal electrodes as an electrode material and is not compatible with a conventional CMOS process. A variable resistor element using an oxynitride of transition metal element as a variable resistor exhibits a stable switching operation, is satisfactory in data retaining characteristics, and requires a small programming current. Since it does not necessarily require noble metal as an electrode material, it is high in compatibility with the existing CMOS process and easy to produce. It can be formed by a simple step of forming a variable resistor material into a film by oxidizing a lower electrode surface consisting of conductive nitride.

Abstract: Methods for fabricating a printhead are described. In one embodiment, a method includes forming on a substrate using a single fabrication technique multiple resistors, some of the resistors to be used as heater resistors configured to eject fluid and some of the resistors to be used as storage resistors that store data, annealing the heater resistors, and intentionally not annealing at least one of the storage resistors, wherein the annealed storage resistors have a first state representing a first digital value and the unannealed storage resistors have a second state representing a second digital value, such that the values associated with the storage resistors can be read by an appropriate detection circuit.

Abstract: A method is provided of fabricating a thin film resistor semiconductor structure. In one aspect of the invention, the method includes forming a dielectric layer over a semiconductor substrate, forming a thin film resistor on the dielectric layer, and annealing the thin film resistor at a substantially high temperature for a predetermined time period to set the thermal coefficient of resistance of the thin film resistor. A passivation layer is formed over the semiconductor structure.

Abstract: A chip resistor includes: a pair of upper surface electrodes formed at opposing side portions of a rectangular substrate as opposed to each other with respect to a center line of the rectangular substrate extending in a direction connecting the side portions; a resistive element formed on the rectangular substrate to be electrically connected with the upper surface electrode pair; and a pair of end surface electrodes formed on end surfaces of the opposing side portions of the rectangular substrate and electrically connected with the upper surface electrode pair. The chip resistor further includes dummy electrodes formed individually at the opposing side portions of the rectangular substrate at positions corresponding to the upper surface electrode pair in the direction connecting the side portions.

Abstract: There are described various methods and circuits for trimming the parameter value of a thermally mutable electrical component in two directions. A sequence of heat pulses is selected as a function of thermal history using an adaptive trimming algorithm, where parameters of the sequence of heat pulses are based on a resulting impact of previous heating pulses. Direction of trimming, trimming increment, and remaining trimming distance can all be used to determine the parameters of succeeding heat pulses, wherein the parameters of the pulses can be, for example, amplitude, duration, and time interval between pulses.

Abstract: Sensor platforms and methods of making them are described. A platform having a non-horizontally oriented sensor element comprising one or more nanostructures such as nanotubes is described. Under certain embodiments, a sensor element has or is made to have an affinity for an analyte. Under certain embodiments, such a sensor element comprises one or more pristine nanotubes. Under certain embodiments, the sensor element comprises derivatized or functionalized nanotubes. Under certain embodiments, a sensor is made by providing a support structure; providing one or more nanotubes on the structure to provide material for a sensor element; and providing circuitry to electrically sense the sensor element's electrical characterization. Under certain embodiments, the sensor element comprises pre-derivatized or pre-functionalized nanotubes. Under other embodiments, sensor material is derivatized or functionalized after provision on the structure or after patterning.

Abstract: [Problem] To provide a chip resistor and a method for manufacturing thereof, the chip resistor keeping easily soldering strength even if mounted in a horizontal position, and never projects from a holding recess of a positioning jig in a mounting process, and further does not hinder miniaturization thereof from being promoted, while keeping a good appearance thereof. [Means of Solution] In manufacturing a chip resistor 10, front-face electrodes 12 and resisters 13 are formed on the front face 20a of a large size substrate 20, and rear-face electrodes 16 are formed on the rear face 20b of the large size substrate 20. When the rear-face electrodes are formed, the rear-face electrodes 16 are extended to inclined faces of V-shaped grooves of second dividing grooves 22 on the rear face 20b and these extended parts are made to be side-face electrodes 16a.

Abstract: The invention relates to a resistor (18), particularly an SMD resistor, including a planar, metallic support element (19) that has a top surface and a bottom surface, a planar resistor element (21) which is made of a resistive material and is disposed on the bottom surface of the support element (19), and at least two separate metallic connecting parts (23, 23) which electrically contact the resistor element (21) and are arranged in part on the bottom surface of the support element (19). The connecting parts (22, 23) are laterally exposed on the resistor (18) and can be laterally wetted in a visible manner by a solder. The invention further relates to a corresponding production method.

Abstract: A measurement device, in particular anemometric measurement device of a flow sensor, contains film resistors in one or more opening(s) of a cover or a hollow body. The film resistors are fastened according to the invention in the opening(s). Two film resistors differ with respect to their resistance by one to three orders of magnitude. In an anemometric measurement device of a flow sensor according to the invention, a temperature sensor and a heating capacity sensor are placed in a carrier element. The temperature sensor has a temperature-measuring resistor and a heat conductor as platinum thin-film or thick-film resistors on a ceramic substrate. For self-cleaning of an anemometric measurement device of a flow sensor, in which a temperature-measuring element and a heating element are placed in a carrier element, the temperature-measuring element has a platinum thin-film resistor on a ceramic substrate for temperature measurement and is heated with an additional platinum thin-film resistor.

Abstract: Disclosed herein is a porous ceramic heating element wherein 0.08 to 1.00 wt % of a foaming agent is added in 99.00 to 99.92 wt % of a mixture of an inorganic material, a binder, a conductive material, a hardener, a bonding agent and a dispersion medium and mixed with the mixture. The bonding strength of porous foam formed in the ceramic heating element is increased, thereby providing an effect that the entire structure is hardened.

Abstract: A method for fabricating the embedded thin film resistors of a printed circuit board is provided. The embedded thin film resistors are formed using a resistor layer built in the printed circuit board. Compared with conventional discrete resistors, embedded thin film resistors contribute to a smaller printed circuit board as the space for installing conventional resistors is saved, and better signal transmission speed and quality as the capacitive reactance effect caused by two connectors of the conventional resistors is avoided. The method for fabricating the embedded thin film resistors provided by the invention can be conducted using the process and equipment for conventional printed circuit boards and thereby saving the investment on new types of equipment. The method can be applied in the mass production of printed circuit boards and thereby reduce the manufacturing cost significantly.

Abstract: A method for manufacturing ultralow-resistance current sensors of size 0402 to 4518 of IEEE specifications includes the steps of: a raw metallic strip being pressed to roll over a first tension roller, a cutting tool over the first tension roller being fed to cut the raw metallic strip so as to form a deep groove thereof along the moving metallic strip, an insulating material being filled into and along the deep groove so as to form an lengthwise insulating portion of the metallic strip, and the metallic strip with the insulating portion being segmented into a plurality of ultralow-resistance current sensors.

Abstract: A thin film composition is made from silicon, an insulator such as alumina or silicon dioxide, and at least one additional material such as chromium, nickel, boron and/or carbon. These materials are combined to provide a thin film having a ? of at least 0.02 ?-cm (typically 0.02-1.0 ?-cm), and a TCR of less than ±1000 ppm/° C. (typically less than ±300 ppm/° C.). A sheet resistance of at least 20 k?/? may also be obtained. The resulting thin film is preferably at least 200 thick, to reduce surface scattering conduction currents.

Abstract: A thin film resistor (5) of an integrated circuit comprises an elongate resistive film (7) extending between electrical contact pads (10,11). A low impedance element (20) overlays and is electrically coupled to a portion of the resistive film (7) in an intermediate portion (22) thereof adjacent a second side edge (17) of the resistive film (7) for conducting current in parallel with the intermediate portion (22), and for reducing current density in the intermediate portion (22). First and second transverse edges (28,29) formed by spaced apart first and second slots (26,27) which extend from a first side edge (16) into the resistive film (7) define with a first side edge (16) of the resistive film (7) and the low impedance element (20) first and second trimmable areas (30,31) in the intermediate portion (22).

Abstract: A microchip device is disclosed that combines a signal attenuator and a frequency filter. An embodiment of the device includes an input contact, an output contact, and a ground contact formed on the surface of a substrate. Resistive elements formed on the substrate interconnect the contacts. At least the input contact includes a gap pattern formed therein that is dimensioned and arranged such that the input contact provides a reactive impedance characteristic. The combination of the resistance of the resistive elements and the reactive impedance characteristic of the input contact are selected to provide attenuation and frequency filtering of a high frequency signal input to the microchip device. A method of manufacturing the filter-attenuator microchip device is also described.

Abstract: A chip resistor having first and second opposite ends includes a rigid insulated substrate having a top surface and an opposite bottom surface, a first electrically conductive termination pad and a second electrically conductive termination pad, both termination pads on the top surface of the rigid insulated substrate, a layer of resistive material between the first and second electrically conductive termination pads, and a first and a second flexible lead, each made of an electrically conductive metal with a solder enhancing coating. The first flexible lead attached and electrically connected to the first electrically conductive termination pad and the second flexible lead attached and electrically connected to the second electrically conductive termination pad. Each of the flexible leads has a plurality of lead sections facilitating bending around the end of the chip resistor.

Abstract: An electrical resistor has an electrically conductive stack, which includes a plurality of metal first layers and second layers. The stack allows to produce a highly anisotropic resistor, in which the resistance in the direction perpendicular to the layers is much higher than in the plane of the layers. The anisotropy allows the current flowing through the stack to be made homogenous, e.g., to be distributed over the entire stack surface, even if the current is input into the stack in an inhomogenous manner.

Abstract: A method of fabricating a potentiometer in which conductive stampings are cut to be both the connector pins and the substrate of the potentiometer. In the region where the potentiometer is desired, an insulating layer covers the surface of the stamping. The insulating layer can be the same material as the solder mask, and electrically isolates the connector pins from the resistive area. Next, carbon trace is screen-printed over the insulating layer where the potentiometer is desired, and oven-cured. This subassembly is then placed into a housing of plastic or another insulating material. Last, the feedback and ground pins are assembled into the plastic housing. The ground pin is laid on top of the end of the carbon trace to make an electrical connection to the resistive trace.

Abstract: A resistor includes a substantially cylindrical resistive element having a resistance of less than about 1 m?, a substantially cylindrical first termination electrically connected to the resistive element and a second termination electrically connected to the resistive element. The substantially cylindrical first termination is hollow to allow for accepting a connection such as from a battery cable. In addition there may be sense leads present on the resistor. A method of forming a substantially cylindrical resistor includes forming a hollow cylindrical resistor body by rolling a flat sheet comprising a resistive element and a first termination and a second termination joined on opposite ends of the resistive element.

Abstract: According to a first preferred embodiment, a resistor arrangement with resistor elements is specified whose first electrodes are conductively connected to each other by means of a flexible, conductive connection element that is curved. The connection element has changes in curvature in the regions arranged between two adjacent resistor elements. According to a second preferred embodiment, a resistor arrangement with resistor elements is specified that are connected to each other by a flexible connection element. The resistor elements each have an arrangement of slot-like recesses.

Abstract: A sacrificial anode assembly. The sacrificial anode assembly includes a sacrificial anode, an insulator positioned around an end of the anode, an electric coupler positioned around the insulator and extending beyond the end of the anode, the electric coupler electrically isolated from the anode, a resistor having a first lead and a second lead, the first lead electrically connected to the anode and the second lead electrically connected to the electric coupler, and a cap positioned around the electric coupler, the cap electrically connected to the electric coupler and electrically isolated from the anode. The cap complete encapsulates the resistor, the first lead, and the second lead.

Abstract: Electro-thermal trimming of thermally-trimmable resistors is used to trim one or more of the plurality of resistors in or associated with an analog electric circuit. The TCR of each of a subset of a plurality of electro-thermally-trimmable resistors can be trimmed independently from the resistance in order to adjust the output parameter of an analog electric circuit without changing other parameters that would be affected by a change in resistance.

Abstract: A circuit board element (11) and production thereof are disclosed, whereby a noble metal (16) is applied to a structured conductor layer (13) on a circuit board substrate (12), comprising said conductor layer (13). The conductor layer (13) is roughened on the surface, preferably after the structuring thereof and the noble metal applied as a layer (16), essentially on all of the structured roughened conductor layer (13), whereupon the noble metal layer surface is given a corresponding roughness (8?).

Abstract: The variable resistance element of the present invention is a variable resistance element having an electrode, the other electrode, and a metal oxide material sandwiched between the electrodes and having an electrical resistance, between the electrodes, changing reversibly in response to a voltage applied between the electrodes. The variable resistance element further includes, inside the metal oxide material, a low resistance material having a lower electrical resistance than the metal oxide material and being out of contact with at least either one of the electrodes. This makes it possible to reduce a forming voltage for providing a conductive section inside the metal oxide material, without causing a leakage current to increase.