Abstract: A signal transmitting circuit and a signal receiving circuit for serial communication, and an electronic device are provided. The signal transmitting circuit includes a control module, a first transmitter, a second transmitter, a first differential pin, and a second differential pin, wherein the control module is configured to control the first transmitter to output a first signal via the first differential pin, and control the second transmitter to output a second signal via the second differential pin to record target information with a target signal after differentiating between the first signal and the second signal; and wherein if the target information includes data information and instant information, the data information is recorded in the target signal with a third signal with a first frequency while recording the instant information with a fourth signal with a second frequency, the first frequency is different from the second frequency.

Abstract: A first wafer of semiconductor material has a surface. A second wafer of semiconductor material includes a substrate and a structural layer on the substrate. The structural layer integrates a detector device for detecting electromagnetic radiation. The structural layer of the second wafer is coupled to the surface of the first wafer. The substrate of the second wafer is shaped to form a stator, a rotor, and a mobile mass of a micromirror. The stator and the rotor form an assembly for capacitively driving the mobile mass.

Abstract: A data transmission method, a timing controller, a source driver and a display device, and a data transmission technology. The method includes: a timing controller generating an idle signal, which may be a random signal with a clock edge; and the timing controller sending the idle signal to a source driver, wherein the source driver may judge whether a clock signal of the source driver is synchronous with that of the timing controller according to the idle signal.

Abstract: According to one embodiment, in a first differential amplifier circuit of a semiconductor device, a first transistor receives an input signal at the gate. A second transistor forms a differential pair with the first transistor. The second transistor receives a reference signal at the gate. A third transistor is connected in series with the first transistor. A fourth transistor is connected in series with the second transistor. A fifth transistor is disposed on the output side. The fifth transistor forms a first current mirror circuit with the fourth transistor. A sixth transistor is connected to the drain of the second transistor in parallel with the fourth transistor. The sixth transistor forms a second current mirror circuit with the fifth transistor. A first discharge circuit is connected to the source of the sixth transistor.

Abstract: A semiconductor storage device includes a first input driver configured to receive a first signal from a memory controller, a second input driver configured to receive a chip enable signal from the memory controller, and a first control circuit. The first control circuit is configured to set the semiconductor storage device in an enabled state or a disabled state depending on whether or not the first signal which is received during a time period that starts with assertion of the chip enable signal and is prior to receipt of a command sequence, corresponds to a first chip address.

Abstract: The system generally includes a crosspoint switch in a local data collection system having multiple inputs and multiple outputs including a first input connected to a first sensor and a second input connected to a second sensor. The multiple outputs include a first output and a second output configured to be switchable between a condition in which the first output is configured to switch between delivery of a first sensor signal and a second sensor signal and a condition in which there is simultaneous delivery of the first sensor signal and the second sensor signal. Each of multiple inputs is configured to be individually assigned to any of the multiple outputs. The local data collection system includes multiple data acquisition units each having an onboard card set configured to store calibration information and maintenance history. The local data collection system is configured to manage data collection bands.

Abstract: Embodiments include a power conversion circuit comprising first and second semiconductor switches, and a drive circuit configured to create a period of operational overlap for the first and second switches by setting a gate voltage of the first switch to an intermediate value above a threshold voltage of the first switch, during turn-on and turn-off operations of the second switch. Embodiments also include a method of operating first and second semiconductor devices, comprising: reducing a gate voltage of the first device to an intermediate value above a threshold voltage while the second device is off; turning off the first device after the second device is on; increasing the gate voltage of the first device to the intermediate value while the second device is on; and fully turning on the first device after the second device is off.

Abstract: A serial bus repeater includes a port circuit and a low power state detection circuit. The port circuit is configured to communicate via a serial bus. The low power state detection circuit includes a power state transaction identification circuit and a bus state identification circuit. The power state transaction identification circuit is configured to identify a power state transaction on the serial bus. The power state transaction is indicative of entering a reduced power state. The bus state identification circuit is configured to identify a value of termination resistance on the serial bus that is indicative of entering the reduced power state.

Abstract: A rectifying circuit includes a HEMT, a diode connected in antiparallel to the HEMT; and a gate drive circuit, wherein the gate drive circuit includes a gate drive power supply, a first transistor, a second transistor configured to turn on in a complementary manner with the first transistor, a first capacitor including an input capacitance of the HEMT, a second capacitor provided on a pathway configured to charge the input capacitance, a first resistor connected in parallel to the first capacitor, and a second resistor connected in parallel to the second capacitor, the gate drive circuit is configured to control a gate voltage of the HEMT to make the gate voltage lower than a source voltage of the HEMT when the HEMT is turned off.

Abstract: Systems and methods that may be implemented to provide on-board trace impedance testing for a system level board of an information handling system. A printed circuit board (PCB) of the system level board may include built-in test trace circuitry that may be used to measure board trace impedance so that the trace impedance of a fully assembled system level board may be tested and verified for compliance with trace impedance specification, and without requiring any disassembly of the board.

Abstract: In certain aspects, a delay circuit includes a multiplexer, a first delay path coupled between an input of the delay circuit and a first input of the multiplexer, and a second delay path coupled between the input of the delay circuit and a second input of the multiplexer. The first delay path includes a first delay device, and the second delay path includes a first inverter, a second delay device, and a second inverter. In other aspects, a delay circuit includes a latch including a first input, a second input, and an output. The first input of the latch is coupled to an input of the delay circuit. The delay circuit also includes a delay path coupled between the input of the delay circuit and the second input of the latch, wherein the delay path includes a pulse generator and a delay device.

Abstract: Disclosed is a method for driving a transistor device and an electronic circuit. The method includes: in an on-state of the transistor device (1), reducing a drive voltage (VGS) of the transistor device (1) from a maximum voltage level (VMAX) to an intermediate voltage level (VINT) that is higher than a threshold voltage level (VTH) of the transistor device (1); maintaining the intermediate voltage level (VINT) for a predefined time period (TINT); and reducing the drive voltage (VGS) to below the threshold voltage level (VTH) after the predefined time period (TINT) to switch the transistor device to an off-state.

Abstract: A duty-cycle adjustment circuit receives a differential pair of input signals and generates an output signal based on the differential pair. The duty-cycle adjustment circuit drives the output signal to a logic-high state based on transitions of a first polarity in a first input signal of the differential pair, and drives the output signal to a logic-low state based on transitions of the first polarity in a second input signal of the differential pair. For example, rising-edge transitions of the output signal may be aligned with rising-edge transitions of the first input signal, and falling-edge transitions of the output signal may be aligned with rising-edge transitions of the second input signal. Alternatively, rising-edge transitions of the output signal may be aligned with falling-edge transitions of the first input signal, and falling-edge transitions of the output signal may be aligned with falling-edge transitions of the second input signal.

Abstract: Devices and methods for finite impulse response (FIR) feed forward equalization (FFE) at a transmitter are provided. A voltage-mode driver circuit has a main driver and an equalization driver. The main driver drives the digital output signal based on a received digital input signal. The equalization function of the equalization driver is enabled or disabled for a short duration of time to provide at least one of FIR equalization and pre-emphasis to the digital output signal. Pre-emphasis is effected by enabling a low-resistance path of the equalization driver based on the digital input signal such that, when the low-resistance path is enabled, it reduces the transmission resistance for a short period of time.

Abstract: A radio frequency switch includes a control buffer circuit to generate a first gate voltage and a first body voltage; and a switching circuit to switch at least one signal path in response to the first gate voltage and the first body voltage. The control buffer circuit includes an off voltage detection circuit to detect whether the off voltage is a negative voltage or a ground voltage and output a voltage detection signal, a first gate buffer circuit to output a first gate voltage having a voltage level based on the voltage detection signal and the band selection signal, and a first body buffer circuit to output a first body voltage having a voltage level based on the voltage detection signal, the band selection signal, and the mode signal.

Abstract: Methods, systems, and apparatus to increase common-mode transient immunity in isolation devices is disclosed. An example apparatus includes a current mirror including an input terminal and an output terminal; a transistor including a gate terminal, a first current terminal, and a second current terminal, the gate terminal coupled to a reference voltage terminal, the first current terminal coupled to the input terminal of the current mirror, and the second current terminal coupled to an input node; a buffer including an input terminal and an output terminal, the input terminal of the buffer coupled to the output terminal of the current mirror; and a logic gate including an input terminal and an output terminal, the input terminal of the logic gate coupled to the output terminal of the buffer.

Abstract: A driver for driving a power transistor, the driver having: a first transistor, and a second transistor; wherein (1) when the first transistor is turned on, the second transistor is simultaneously turned on, and wherein after the second transistor remains on for a first time period, the second transistor is turned off for a second time period during when a switching voltage at a second terminal of the power transistor is rising, and the second transistor is turned on after the second time period is over; and (2) when the first transistor is turned off, the second transistor is simultaneously turned off.

Abstract: A first method includes determining a total length of pending packets for a network link, determining a currently preferred power mode for the network link based on the total length of pending packets for the network link, and changing a current power mode for the network link to the currently preferred power mode. A corresponding apparatus is also disclosed herein. A second method includes determining a utilization for a network link, determining a currently preferred power mode for the network link based on the utilization for the network link, and changing a current power mode for the network link to the currently preferred power mode. A corresponding apparatus is also disclosed herein.

Abstract: A method and apparatus in a receiver to determine if a high speed communication link is in an idle mode or in an active mode. Signals during the idle mode are of lower amplitude and lower frequency compared to amplitude and frequency in the active mode. A signal detector in the receiver determines if the high speed communication link has transitioned from idle mode to active mode and, if so, wakes up high power circuitry in the receiver to receive data.

Abstract: Methods and systems of reducing a substrate noise in a charge pump having a flying capacitor are provided. An input node of the flying capacitor is pre-charged at a first slew rate. The input node of the flying capacitor is charged at a second slew rate that is faster than the first slew rate. The input node of the flying capacitor is pre-discharged at a third slew rate. The input node of the flying capacitor is discharged at a fourth slew rate that is faster than the first slew rate.

Abstract: The present disclosure provides an IO circuit and an access control signal generation circuit for the IO circuit. In one implementation, the access control signal generation circuit includes: a bias module coupled with an IO port, for generating an access control signal according to an IO port signal and an IO control signal, where a voltage value of the access control signal is a maximum value of a voltage value of an IO port voltage division signal and a voltage value of the IO control signal, and the voltage value of the IO port voltage division signal is a percentage of a voltage value of the IO port signal; an access control module coupled with the bias module, the access control module configured to control cut-off or conduction when receiving the access control signal and the IO port signal and outputting a first interface signal; and a higher-selection module configured to generate a second interface signal according to an IO power source signal and the IO port signal.

Abstract: Disclosed herein is an electronic device including an IO node, with a receiver coupled to receive input from the IO node. A transmitter driver has a first n-channel DMOS with a source coupled to the IO node. A pass gate circuit decouples the IO node from the receiver based upon presence of a negative voltage at the IO node and couples the IO node to the receiver based upon lack of presence of the negative voltage at the IO node. A transmit protection circuit applies the negative voltage from the IO node to the gate and bulk of the first n-channel DMOS based upon the presence of the negative voltage at the IO node.

Abstract: Turn-on and turn-off of a semiconductor device are controlled through control of a gate voltage in accordance with a driving control signal. At a first time after a start of a Miller period of a gate voltage in driving a gate of the semiconductor device in accordance with the driving control signal, a driving signal is changed from “1” to “0” to thereby make a gate driving ability temporarily lower than the gate driving ability during a period from a starting time of the turn-on operation to the first time. Further, at a second time corresponding to an end of the Miller period, the driving signal is changed from “0” to “1” to thereby increase the gate driving ability.

Abstract: One or more resistors or resistances are integrated in a 7-bit DVR or PVCOM integrated circuit. A 7-bit DVR or PVCOM integrated circuit includes a 7-bit DAC. The integrated resistors or resistances (R1, R2, or RSET, or any combination) reduces the number of external components, reduces the number of pins, and increases the accuracy of the DVR or PVCOM circuit. The least significant bit (LSB) of the DAC depends only on ratios of internal resistors, which can be made very accurate and independent of temperature.

Abstract: A high-speed signal driving device includes an assist driver, a delay adjuster, and a plurality of drivers. The assist driver receives a control signal and is coupled to a first output node and a second output node to output a first current to the first output node or the second output node. The delay adjuster receives the control signal to generate a plurality of delay signals. Each of the delay signals has a different delay time corresponding to the control signal. One of the drivers receives the control signal, and other drivers correspondingly receive the plurality of delay signals. The plurality of drivers are coupled to the first output node and the second output node via a first output end and a second output end.

Abstract: A voltage translator having first and second one-shots shifts a voltage level of a first voltage signal to generate a second voltage signal, and vice-versa. The first one-shot generates a first driver signal when the first voltage signal goes from low to high based on a time duration for which the first voltage signal remains high. The second voltage signal is generated based on the first driver signal. Similarly, the second one-shot generates the first voltage signal when the second voltage signal goes from a low to high based on a time duration for which the second voltage signal remains high.

Abstract: A semiconductor apparatus may include a degradation detection circuit and a circuit block. The degradation detection circuit may detect a degradation occurred in a semiconductor apparatus and generate degradation information. The circuit block may include at least one transistor configured to receive a variable bias voltage and a variable gate voltage.

Abstract: The methods and systems for data collection, processing, and utilization of signals with a platform monitoring at least a first element in a first machine in an industrial environment generally include obtaining, automatically with a computing environment, at least a first sensor signal and a second sensor signal with a local data collection system that monitors at least the first machine and connecting a first input of a crosspoint switch of the local data collection system to a first sensor and a second input of the crosspoint switch to a second sensor in the local data collection system.

Abstract: Apparatuses in data input/output circuits of a semiconductor device are described. An example apparatus includes an output driver and a pre-output driver. The pre-output driver includes: an output terminal coupled to the output driver and provides an output signal to the output driver; an output stage that receives a data signal and provides the output signal to the output terminal responsive, at least in part, to the data signal; and a slew rate control stage coupled to the output stage and controls a current flowing through the output stage. The output stage is disposed between the slew rate control stage and the output terminal.

Abstract: The methods and systems for data collection, processing, and utilization of signals with a platform monitoring at least a first element in a first machine in an industrial environment generally include obtaining, automatically with a computing environment, at least a first sensor signal and a second sensor signal with a local data collection system that monitors at least the first machine and connecting a first input of a crosspoint switch of the local data collection system to a first sensor and a second input of the crosspoint switch to a second sensor in the local data collection system.

Abstract: A transmission channel transmits high-voltage pulses in a transmission phase and receives echoes of the high-voltage pulses in a receiving phase. The transmission channel includes a buffer with anti-memory circuitry to couple drain conduction terminals of buffer transistors of a high-side of a buffer of the transmission channel to a low-side reference voltage of a low-side of the buffer and couple drain conduction terminals of buffer transistors of the low-side of the buffer to a high-side reference voltage of the high-side of the buffer during the clamping phase.

Abstract: A receiving circuit includes a first amplification circuit and a second amplification circuit. The first amplification circuit may generate a first output signal by asymmetrically and differentially amplifying first and second signals. The second amplification circuit may generate a second output signal by asymmetrically and differentially amplifying the second and first signals.

Abstract: A bidirectional clock synchronization circuit is provided. The circuit includes a bidirectional port having an input/output terminal and a transceiver, having a first interface with a unidirectional input and a unidirectional output, and a second interface with a bidirectional input/output coupled to the input/output terminal of the bidirectional port. The circuit includes a phase locked loop (PLL), having an output coupled to the unidirectional input of the transceiver, and having an input coupled to the unidirectional output of the transceiver, the phase locked loop selectable as to frequency range for the input or the output of the phase locked loop.

Abstract: An electronic circuit includes semiconductor substrate having a first doping type and a reference terminal coupled to the semiconductor substrate. A tub area having a second doping type is formed in the semiconductor substrate. A well area having the first doping type is formed within the tub area. A driver circuit comprising a transistor is formed within the well area and has an output terminal. A control circuit is coupled to the driver circuit for controlling the driver circuit. A second transistor is within the well area and coupled in series between the driver circuit and the output terminal, the second transistor having a first terminal coupled to the driver circuit and a second terminal coupled to the output terminal. A biasing circuit is coupled to a gate terminal of the second transistor and configured to bias the transistor to a conducting state.

Abstract: A device comprises a first diode and a second diode connected in series between a first terminal and a second terminal of a switching element, wherein an anode of the first diode is directly connected to an anode of the second diode, a third diode connected between the first terminal and the second terminal of the switching element and a first switch connected in parallel with the first diode.

Abstract: A first circuit outputs transmission signals that change between “H” and “L” in a period of an oscillation signal in addition to a transition time of an input signal when it changes to “H” or “L”. Control protection elements invalidate induced voltage signals obtained from transformers for first and second mask periods in response to transmission signals. Buffer circuits and Schmitt circuits generate a first signal and a second signal, each indicating “H” for a relatively long period, on the basis of “H” of the induced voltage signals. A control circuit invalidates the first signal and the second signal when both the first signal and the second signal indicate “H”.

Abstract: Apparatuses in data input/output circuits of a semiconductor device are described. An example apparatus includes an output driver and a pre-output driver. The pre-output driver includes: an output terminal coupled to the output driver and provides an output signal to the output driver; an output stage that receives a data signal and provides the output signal to the output terminal responsive, at least in part, to the data signal; and a slew rate control stage coupled to the output stage and controls a current flowing through the output stage. The output stage is disposed between the slew rate control stage and the output terminal.

Abstract: An off chip driver circuit includes a bias circuit and a driver sub-cell circuit. The bias circuit and off chip driver sub-cell circuit are in electrical communication with each other. The bias circuit includes two serially aligned diodes which are in an off-state when the driver sub-cell is in a functional mode and which are in an on-state when the driver sub-cell is in a cold spare mode. The arrangement of the diodes enables the off chip driver circuit to handle similar voltage signals in both the functional mode and the cold spare mode.

Abstract: A memory array contains a plurality of banks coupled to each other by a plurality of data lines. Each of the data lines is divided into a plurality of segments within the array. Respective bidirectional buffers couple read data from one of the segments to another in a first direction, and to couple write data from one of the segments to another in a second direction that is opposite the first direction. The data lines may be local data read/write lines that couple different banks of memory cells to each other and to respective data terminals, digit lines that couple memory cells in a respective column to respective sense amplifiers, word lines that activate memory cells in a respective row, or some other signal line within the array. The memory array also includes precharge circuits for precharging the segments of respective data lines to a precharge voltage.

Abstract: A method and system of optical communication are provided. An optical modulator device includes a first and a second waveguide segment, and is configured to modulate an incident optical signal. A first feed-forward equalization (FFE) circuit including an inner first tap and an inner second tap, is configured to equalize the first waveguide segment. A second FFE circuit including a first inner tap and a second inner tap, is configured to equalize the second waveguide segment. An FFE recombination of the first inner tap and the second inner tap of the first and second FFE circuits, is in the electrical domain, respectively. An FFE recombination of the first and second modulation signals, operative to equalize a combination of the first second waveguide segments, is in the optical domain.

Abstract: A drive unit of a semiconductor element including: a drive circuit for driving a control electrode of a voltage control semiconductor element to which a freewheeling diode is connected in anti-parallel; a resistor connected between the control electrode and the drive circuit; a capacitor having one terminal connected between the resistor and the control electrode; and a switch element connected between another terminal of the capacitor and a low-voltage-side electrode of the voltage control semiconductor element, wherein a control electrode of the switch element is connected to a connection point of the resistor and the capacitor.

Abstract: Including control data in a serial audio stream is presented herein. A device can include a clock component that is configured to send, via a clock pin of the device, a bit clock signal directed to a slave device. A frame component can send, via a frame pin of the device, a frame clock signal directed to the slave device. A control component can receive, via a data pin of the device during a first portion of a phase of a period of the frame clock signal, slave data from the slave device on a bit-by-bit basis based on the bit clock signal according to an integrated interchip sound (I2S) based protocol; and send, via the data pin during a second portion of the phase after the first portion, a set of control bits directed to the slave device on the bit-by-bit basis based on the bit clock signal.

Abstract: Disclosed herein is a driver circuit including a first group of transistors provided between first and second nodes and including n of the transistor(s) where n is equal to or greater than one, and a second group of transistors provided in parallel with the first group of transistors and including m of the transistor(s) where m is equal to or greater than one and not equal to n, the m transistors being connected together in series. The n-channel transistor in the first group and at least one of the two n-channel transistors in the second group have their gate connected to an input node.

Abstract: A solid state power control apparatus includes: (a) at least one IGBT and at least one FET, for supplying current to a load, and (b) a current controller for shutting off the IGBT and FET. The current controller is arranged to start shut off of the IGBT before it starts shut off of the FET. Further, the current controller is arranged to reduce current flow prior to start of the turn off of the IGBT and FET.

Abstract: A source driving circuit is provided. The source driving circuit includes a digital-to-analog conversion module configured for converting raw image data into gray-scale image data; an optimization module configured for obtaining an optimal output sequence of the gray-scale values in pixel units for each row in a display panel and outputting the gray-scale values of each pixel in pixel units corresponding to data lines by following the order of the optimal output sequence to form a first image data; and a buffer module configured for enhancing a load driving capability of the first image data outputted by the optimization module.

Abstract: A switching voltage converter is disclosed. The voltage converter includes a controller configured to generate first and second control signals, and a switch stack including six serially connected switches configured to receive a plurality of fixed voltages and the first and second control signals. The switch stack is configured to generate a voltage signal at a switch node based on the fixed voltages and on the control signals. In addition, the voltage signal is controlled to be substantially equal to a first fixed supply voltage or substantially equal to a second fixed supply voltage according to the first and second control signals, and an output filter connected to the switch node and configured to generate an output voltage based on the voltage at the switch node.

Abstract: A memory is disclosed. The memory includes a memory array having a plurality of memory cells. The memory also includes an address decoder configured to assert a wordline to enable the memory cells. Additionally, the memory includes a tracking circuit configured to vary a duration of asserting the wordline as a function of which one of the memory cells is accessed. A method is also disclosed. The method includes asserting a wordline to enable the memory cells and varying a duration of asserting the wordline as a function of which one of a plurality of memory cells is accessed.

Abstract: A system on chip, semiconductor device, and/or method are provided that include a plurality of masters, an interface, and a semaphore unit. The interface interfaces the plurality of masters with a slave device. The semaphore unit detects requests of the plurality of masters, controlling the salve device, about an access to the interface and assigns a semaphore about each of the plurality of masters by a specific operation unit according to the detection result.

Abstract: A method of operating an input/output interface includes selecting one of a plurality of output driver circuits according to a mode selection signal, and outputting a data signal using the selected one of the plurality of output driver circuits. Another method of operating an includes generating a mode selection signal based on a received command signal, and controlling an on-die termination (ODT) circuit included in the input/output interface according to the mode selection signal. Another method of operating an includes generating a mode selection signal based on a received command signal, and controlling an ODT circuit included in the input/output interface according to the mode selection signal.

Abstract: System, methods and apparatus are described that offer improved performance of an Inter-Integrated Circuit (I2C) bus. Primary data may be encoded in first signaling in accordance with I2C bus protocols, and the first signaling may be combined with second signaling to obtain combined signaling for transmission on an I2C bus. Secondary data may be encoded in the second signaling with the combined signaling remaining compatible with the I2C bus protocols. The second signaling may modulate a voltage level of at least one signal in the first signaling. The second signaling may pulse-width modulate a clock signal transmitted on the I2C bus. The second signaling may modify a start condition between bytes transmitted on the I2C bus. The second signaling may add a plurality of short pulses to a clock signal transmitted in the first signaling.