Abstract: A voltage regulation module which includes an adjustable voltage which reduces the positive supply voltage and increases the negative supply voltage during a lower power mode. The voltage regulation module includes a voltage generator which provides an N-type substrate bias voltage at the normal operating voltage level of the positive supply voltage and which provides a P-type substrate bias voltage at the normal operating voltage level of the negative supply voltage during the lower power mode. Thus, the supply voltage levels are adjusted rather than the substrate bias voltages during the lower power mode. The voltage generator may be implemented as a voltage regulator, or may be implemented as a bias generator or charge pump or the like.

Abstract: A control circuit for substrate potential regulation for an integrated circuit device. The control circuit includes a current source configured to generate a reference current. A variable resistor is coupled to the current source. The variable resistor is configured to receive the reference current and generate a reference voltage at a node between the current source and the variable resistor. The reference voltage controls the operation of a substrate potential regulation circuit coupled to the node.

Abstract: A charge pump circuit is provided. The charge pump circuit includes a pump unit, first through sixth switches, a fly capacitor and an output capacitor. In a first period, an input voltage and a first voltage charge at least one internal capacitor of the pump unit via a first terminal and a second terminal of the pump unit. In the second period, the internal capacitor of the pump unit provides charges to the fly capacitor via the second switch and generates a first output voltage. In the third period, the fly capacitor supplies the charges to the output capacitor via the fourth switch to generate a second output voltage.

Abstract: A microprocessor according to one embodiment includes a supply node providing a core voltage, a functional block, a charge node, select logic, and substrate bias logic. The functional block has multiple power modes and includes one or more semiconductor devices and a substrate bias rail routed within the functional block and coupled to a substrate connection of at least one semiconductor device. The select logic couples the substrate bias rail to the charge node when the functional block is in a low power mode and clamps the substrate bias rail to the supply node when the functional block is in a full power mode. The substrate bias logic charges the charge node to a bias voltage at an offset voltage relative to the core voltage when the functional block is in the low power mode. Semiconductor devices may be provided to clamp or otherwise couple the bias rail.

Abstract: A microprocessor including a substrate bias rail providing a bias voltage during a first operating mode, a supply node providing a core voltage, a clamp device coupled between the bias rail and the supply node, and control logic. The control logic turns on the clamp device to clamp the bias rail to the supply node during a second operating mode and turns off the clamp device during the first operating mode. The clamp devices may be implemented with P-channel and N-channel devices. Level shift and buffer circuits may be provided to control the clamp devices based on substrate bias voltage levels. The microprocessor may include a substrate with first and second areas each including separate substrate bias rails. The control logic separately turns on and off clamp devices to selectively clamp the substrate bias rails in the first and second areas based on various power modes.

Abstract: An integrated circuit with body-bias inputs coordinated by a switch at initial power application. A switch coupled to the N-well bias and P-type substrate bias lines of an integrated circuit selectively couples the substrate to ground or the substrate bias supply, depending upon the state of the bias supply lines. During power-up and the initial application of the N-well bias, the substrate is coupled to ground to prevent a leakage induce rise in the substrate potential. Upon sensing the presence of the substrate bias potential on the substrate bias line, the switch couples the substrate to the substrate bias line instead of ground. In another embodiment, a switch indirectly senses the availability of the substrate bias potential by sensing a charge pump enable signal.

Abstract: An integrated circuit with body-bias inputs coordinated by a switch at initial power application. A switch coupled to the N-well bias and P-type substrate bias lines of an integrated circuit selectively couples the substrate to ground or the substrate bias supply, depending upon the state of the bias supply lines. During power-up and the initial application of the N-well bias, the substrate is coupled to ground to prevent a leakage induce rise in the substrate potential. Upon sensing the presence of the substrate bias potential on the substrate bias line, the switch couples the substrate to the substrate bias line instead of ground. In another embodiment, a switch indirectly senses the availability of the substrate bias potential by sensing a charge pump enable signal.

Abstract: An open-drain output buffer is operative to sustain relatively high voltages applied to an output pad. The open-drain buffer includes a number of floating wells, output switching devices and corresponding well-bias selectors to ensure that no gate oxide sustains voltages greater than a predefined value. PMOS and NMOS well-bias selectors operate to select and provide an available highest or lowest voltage, respectively, to bias corresponding well-regions and ensure no device switching terminals are electrically over stressed. As output related terminals experience switching related voltage excursions, the well-bias selectors select alternate terminals to continue selection of the respective highest or lowest voltages available and provide correct well-biasing conditions. Voltage dividers are incorporated to generate well-biasing control voltages.

Abstract: A circuit has an input for receiving a power mode control signal to indicate a low power mode. A plurality of non-inverting buffers forms a fanout signal distribution network and provides buffering of the power mode control signal for gated power domain functional circuitry. Each non-inverting buffer has an even number of serially-connected inverting gates, at least a portion providing respective outputs having a valid logic state in the low power mode. Two voltages are used, one of which is disconnected during the low power mode. The non-inverting buffers have a first inverting gate connected to a continuous voltage terminal and a second inverting gate, collectively sized larger than the first inverting gate and connected to a voltage terminal which is selectively disconnected during the low power mode from the continuous voltage terminal.

Abstract: A low-voltage differential communication system includes a low- and programmable-swing voltage-mode transmitter that delivers a low-voltage differential signal to a receiver via differential channel. The receiver employs two input transistors, each in a common-gate configuration, to recover the low-voltage differential signal. A current source in the receiver biases the input transistors such that their source voltages are nominally biased at the common-mode voltage of the differential signal, and their gate-source voltages remain essentially constant with common-mode-voltage fluctuations.

Abstract: Exemplary embodiments of the disclosure include adaptively generating a bias current for a switched-capacitor circuit. An exemplary apparatus includes a first phase signal and a second phase signal operating at a sampling rate. An asserted time of the first phase signal and an asserted time of the second phase signal are separated by a predefined non-overlap time. The apparatus also includes a switched-capacitor circuit with a plurality of switched capacitors operably coupled to the first phase signal and the second phase signal. An amplifier is operably coupled to the switched-capacitor circuit and has a response time inversely proportional to an adaptive bias current. A bias generator is coupled to the amplifier and operates to modify the adaptive bias current responsive to the asserted time of the first phase signal.

Abstract: The present disclosure relates to constructing and operating a transistor or other active device with significantly reduced flicker noise.

Abstract: A semiconductor device includes a pad, an internal power supply line, a pad switch including a MOS transistor to provide an electrically connectable coupling between the internal power supply line and the pad by use of a source-drain channel thereof, and a control circuit configured to control an electrical connection with respect to at least one of a gate node and a back-gate node of the MOS transistor, wherein the control circuit is configured such that at least one of the gate node and the back-gate node is electrically connectable to the pad.

Abstract: A comparator includes a first inverter which is inserted between a power source terminal and one end of a first variable resistor, includes a first FinFET provided with a first gate terminal for receiving a positive phase output signal, and a second gate terminal for receiving a clock signal changing between a first level and a second level, inverts the positive phase output signal, and outputs a negative phase output signal, and a second inverter which is inserted between the power source terminal and one end of a second variable resistor, includes a second FinFET provided with a third gate terminal for receiving the negative phase output signal, a fourth gate terminal for receiving the clock signal, and the same polarity as the first FinFET, inverts the negative phase output signal, and outputs the positive phase output signal.

Abstract: Provided is a semiconductor integrated circuit apparatus capable of controlling the substrate voltage of a MOSFET so that the drain current for an arbitrary gate voltage value in a subthreshold region or a saturated region will be free from temperature dependence and process variation dependence, thereby enhancing the stable operation thereof. The semiconductor integrated circuit apparatus includes: an integrated circuit main body having a plurality of MOSFETs on a semiconductor substrate; a monitor unit for monitoring at least one of the drain currents of the plurality of MOSFETs; and a substrate voltage regulating unit for controlling the substrate voltage of the semiconductor substrate so as to keep constant the drain current.

Abstract: A semiconductor device operates in an active mode or a standby mode, and includes a substrate-potential power source line supplying a substrate potential which is higher in a standby mode than in an active mode, and a source-potential power source line supplying a source potential which is lower in a standby mode than in an active mode. During a mode shift from the standby mode to the active mode, a potential equalizing transistor is turned ON to pass a current flowing from the substrate-potential power source line to the source-potential power source line, to reduce the time length needed for shifting from the standby mode to the active mode.

Abstract: An integrated circuit is provided with adjustable transistor body bias circuitry and adjustable power supply circuitry. The adjustable circuitry may be used to selectively apply body bias voltages and power supply voltages to blocks of programmable logic, memory blocks, and other circuit blocks on the integrated circuit. The body bias voltages and power supply voltages may be identified by computer aided design tools. The body bias voltages may be used to reduce leakage currents and power consumption when high speed circuit block operation is not required. Reduced power supply voltages may also be used to reduce power consumption when high speed circuit block operation is not required. To ensure optimum switching speeds, circuit blocks for which high-speed performance is critical can be provided with minimal body bias voltage or no body bias and can be provided with maximum power supply levels.

Abstract: The PN junctions of a transistor are biased for operation in the active mode but an initial flow of current reverses the bias of the base-emitter junction causing the transistor to conduct a resonant current with a voltage less than the forward junction voltage of said base-emitter.

Abstract: A circuit and a method for adjusting the performance of an integrated circuit, the method includes: comprising: (a) measuring the performance of a first monitor circuit having at least one field effect transistor (FET) of a first set of FETs, each FET of the first set of FETs having a designed first threshold voltage; (b) measuring the performance of a second monitor circuit having at least one field effect transistor (FET) of a second set of FETs, each FET of the second set of FETs having a designed second threshold voltage, the second threshold voltage different from the first threshold voltage; and (c) applying a bias voltage to wells of the FETs of the second set of FETs based on comparing a measured performance of the first and second monitor circuits to specified performances of the first and second monitor circuits.

Abstract: The present invention provides a tunable voltage controller for use with a sub-circuit. In one embodiment, the tunable voltage controller includes a diode-connected MOS transistor contained in a doped well of a substrate and configured to provide a voltage for the sub-circuit. Additionally, the tunable voltage controller also includes a biasing unit configured to adjust the voltage by selectively connecting the doped well to one of a plurality of voltage sources or to a variable voltage source.

Abstract: The present disclosure provides an integrated circuit. The integrated circuit includes a frequency detector coupled with a logic circuit; a supply voltage regulator coupled with the frequency detector and designed to provide an adaptive voltage supply to the logic circuit based on a frequency error from the frequency detector; and a substrate bias regulator coupled with the frequency detector and designed to provide an adaptive body bias voltage to the logic circuit based on the frequency error.

Abstract: The internal voltage generator of a semiconductor integrated circuit includes at least one variable reference voltage generating unit that generates a base reference voltage increased or decreased according to the variation in temperature, at least one level shifting unit that transforms the base reference voltage outputted by the at least one variable reference voltage generating unit into at least one prescribed reference voltage for generating internal voltage and outputs the transformed reference voltage, and at least one internal voltage generating unit that generates an internal voltage by using the at least one reference voltage for generating internal voltage outputted by the at least one level shifting unit.

Abstract: Structure and process for compensating threshold voltage variation due to process variation. The structure includes a circuit segmented into sub-blocks having a predetermined size corresponding to a characteristic length associated with a process variation. A local circuit is located in each circuit sub-block, and a reference signal coupled to each local circuit. The local circuit generates a compensation signal in response to the reference signal to adjust an electrical parameter of the respective sub-block to a predetermined value.

Abstract: A field effect transistor has a shifted gate such that the gate-source distance depends on the ratio of the threshold voltage to the drain voltage. In one embodiment, a switch may include two FETs: one FET in a series configuration and one FET in a shunt configuration. Providing a switch having at least one FET with a shifted gate allows increasing switching speed and decreasing insertion loss.

Abstract: To provide a semiconductor integrated circuit including: a detection circuit that detects an occurrence of latch up and can be configured while adopting a layout configuration that suppresses the occurrence of latch up; and a recovery unit that enables a recovery from the latch up without cutting off a positive potential. The semiconductor integrated circuit includes: a n-channel MOS transistor 7 that is formed on a P-type region 3 on a semiconductor substrate; and a latch up detection circuit that detects an occurrence of latch up in the n-channel MOS transistor 7. The latch up detection circuit includes: a n-MOS transistor structure 12 in which a source 10 and a back gate 8 are connected in common with a source 5 and the back gate 8 of the n-channel MOS transistor 7; and an electric current detection unit 15 that detects an electric current flowing to a drain 9 of the n-MOS transistor structure 12.

Abstract: A power up biasing circuit for a split power supply based circuit includes a split power supply state sensing circuit that produces a pair of complimentary control signals indicating a presence or absence of a suitable biasing power supply voltage. A pseudo power supply voltage, based on a first power supply is selected by a selector circuit for acting as a biasing voltage for one or a plurality of components to be protected during initial power up where there is an absence of a second power supply voltage, based on the pair of complimentary control signals. Once the second power supply voltage has fully ramped up to steady state, the selector circuit selects the second power supply voltage as the biasing voltage for one or a plurality of component to be protected.

Abstract: A semiconductor integrated circuit device includes: a switching current observer for observing a switching current; a leakage current observer for observing a leakage current; a comparator which compares the switching current and the leakage current with each other; a threshold voltage controller for controlling a substrate bias voltage in order to make a ratio of the switching current and the leakage current constant; a delay observer for observing a delay amount; and a power supply voltage controller for controlling a power supply voltage in order to keep the delay amount in a predetermined range. In the semiconductor integrated circuit device, a process which enables the minimization of an operation power is carried out by controlling the threshold voltage to make the ratio of the switching current and the leakage current constant at a given clock frequency and controlling the power supply voltage to guarantee the operating speed.

Abstract: A high frequency switching circuit is disclosed. The high frequency switching circuit is provided with first and second high frequency signal terminals, a control terminal, a field-effect transistor having a drain, a source and a gate. The field-effect transistor is connected between the first and the second high frequency signal terminals so as to switch a high frequency signal. The high frequency switching circuit is further provided with a variable resistance circuit which is connected between the gate of the field-effect transistor and the control terminal.

Abstract: A substrate voltage control technique that prevents the operating speed from being decreased and suppresses a leakage current due to a lower threshold voltage with respect to a low voltage use. Since a center value of the threshold voltages is detected by plural replica MOS transistors, and a substrate voltage is controlled to control a center value of the threshold voltages, thereby making it possible to satisfy a lower limit of the operating speed and an upper limit of a leakage current of the entire chip. On the other hand, the substrate voltage is dynamically controlled during the operation of the chip, thereby making it possible to decrease the center value of the threshold voltages when the chip operates to improve the speed, and to increase the center value of the threshold voltages after the operation of the chip to reduce the leakage current of the entire chip.

Abstract: A semiconductor integrated circuit device has a negative voltage generation circuit provided at each power supply circuit unit for six memory macros. Therefore, the response with respect to variation in a negative voltage is increased. In a standby mode, a negative voltage supply line for the six memory macros is connected by a switch circuit, and only a negative voltage generation circuit of one power supply circuit unit among six negative voltage generation circuits of the six power supply circuit units is rendered active. Thus, increase in standby current can be prevented.

Abstract: A booster circuit includes a pump circuit that boosts a voltage supplied from a power supply and outputs the boosted voltage, and a pump controlling circuit that outputs a first clock signal for operating the pump circuit to control the operation of the pump circuit. The pump controlling circuit controls the pump circuit to reduce a number of active charge pump circuits according to an output signal of one of a first comparator and a second comparator, controls the pump circuit to reduce a frequency of a second clock signal for operating the active charge pump circuits by reducing a frequency of the first clock signal according to the other output signal of one of the first comparator and the second comparator, and brings the pump circuit into an inactive state according to an output signal of a third comparator.

Abstract: A semiconductor device includes a first substrate including at least one first well region and first impurity regions on portions of the substrate and a bias voltage plate on a surface of the substrate. A semiconductor device may be of a three dimensional stack structure, and in example embodiments, the semiconductor device may further include a through contact plug substantially perpendicularly penetrating at least one substrate and at least one bias voltage plate. Therefore, a design margin of a semiconductor device may be enhanced and a bias voltage may be provided reliably.

Abstract: In a level conversion circuit, two P channel MOS transistors form a current mirror circuit. When an input signal rises from the “L” level to the “H” level, an N channel MOS transistor connected to a drain of one P channel MOS transistor is brought out of conduction to prevent a leak current from flowing through two P channel MOS transistors, which decreases a power consumption. In addition, when the input signal rises from the “L” level to the “H” level, a P channel MOS transistor connected to a drain of the other P channel MOS transistor is brought into conduction to fix a potential of a node of the drain of the other P channel MOS transistor to the “H” level, which prevents the potential of the node from becoming unstable.

Abstract: A wireless communication device is disclosed wherein the voltage swing of a local oscillator (LO) signal is controlled to prevent overstressing semiconductor devices in a mixer to which the LO signal is supplied. A quadrature divider supplies the LO signal to the mixer. Digital calibration methodology controls the current that the quadrature divider draws from a power supply to set the voltage swing of the LO signal that the quadrature divider generates.

Abstract: The signal switch has flat resistance across the input/output voltage range when in the ON state while still isolating input/output nodes from overshoots and undershoots when in the off state.

Abstract: A level shifting circuit can include a first driver junction field effect transistor (JFET) having a source coupled to a reference supply node and a second driver JFET of a second conductivity type having a source coupled to a boosted supply node, and a first charge pump circuit. The first charge pump circuit can be coupled between the first driver control node and an input node coupled to receive an input signal, and can couple a first terminal of a first capacitor between a reference supply node and a power supply node in response to an input signal. The power supply node can be coupled to receive a power supply potential, the reference supply node can be coupled to receive a reference potential, and the boosted power supply node can be coupled to receive a boosted potential. The reference potential can be between the power supply potential and the boosted potential.

Abstract: A circuit includes an NMOS transistor having a drain and a source, a p-well containing the drain and the source, an n-well under the p-well, and a first well switch configured to selectively connect the n-well to a predetermined voltage in response to an enable phase of a first switching signal. The first well switch can be configured to connect the n-well to the predetermined voltage during the enable phase of the first switching signal and to electrically float the n-well during a non-enable phase of the first switching signal.

Abstract: An integrated circuit with body-bias inputs coordinated by a switch at initial power application. A switch coupled to the N-well bias and P-type substrate bias lines of an integrated circuit selectively couples the substrate to ground or the substrate bias supply, depending upon the state of the bias supply lines. During power-up and the initial application of the N-well bias, the substrate is coupled to ground to prevent a leakage induce rise in the substrate potential. Upon sensing the presence of the substrate bias potential on the substrate bias line, the switch couples the substrate to the substrate bias line instead of ground. In another embodiment, a switch indirectly senses the availability of the substrate bias potential by sensing a charge pump enable signal.

Abstract: A leakage manager system for adequately minimizing static leakage of an integrated circuit is disclosed. The leakage manager system includes a generator configured to generate a control signal to be applied to a sleep transistor. A monitor is configured to determine whether to adjust the control signal to adequately minimize the static leakage. In some embodiments, the monitor includes an emulated sleep transistor. A regulator is configured to adjust the control signal depending on the determination.

Abstract: An electrical circuit comprising a first metal oxide silicon (MOS) n type field effect transistor (NFET) or p type field effect transistor (PFET) and a second MOS NFET or PFET of the same conductivity type as the first NFET or PFET, wherein the drain of the first NFET or PFET is directly connected to the source of the second NFET or PFET, and wherein the gate of the second NFET or PFET is at a voltage value which is equal to or lower than the drain voltage value of the second NFET or PFET in the case of an NFET and equal to or higher than the drain voltage value of the second NFET or PFET in the case of a PFET.

Abstract: Voltage regulator circuitry is provided that exhibits a high power supply rejection ratio and a wide output voltage range. The voltage regulator circuitry can regulate power supply voltages for circuitry on a programmable logic device such as transistor body bias circuitry and configuration random-access-memory array circuitry. The voltage regulator circuitry includes an n-channel metal-oxide-semiconductor drive transistor that is coupled between a power supply voltage terminal and an output terminal. The n-channel metal-oxide-semiconductor drive transistor has a gate that receives a control signal from an operational amplifier. A boost circuit generates an elevated power supply voltage for the operational amplifier. A programmable voltage divider is coupled to the voltage regulator's output. The operational amplifier produces the control signal by comparing a feedback signal from the voltage divider to a reference voltage.

Abstract: An ORing element for use in a power supply and/or power system. The ORing element may include a field effect transistor (FET), a first bi-polar transistor and a second bi-polar transistor. The FET may be electrically connected between an input and an output. The first bipolar transistor may have an emitter electrically connected to the source of the FET and a collector electrically connected to a gate of the FET. The second bi-polar transistor may be diode connected, with its emitter electrically connected to its base. The emitter of the second bi-polar transistor may also be electrically connected to the base of the first bi-polar transistor. The collector of the second bi-polar transistor may be electrically connected to the drain of the FET.

Abstract: An object of the present invention is to provide a technique of reducing the leakage current of a drive circuit for driving a circuit that must retain a potential (or information) when in its standby state. A semiconductor integrated circuit device of the present invention includes a drive circuit for driving a circuit block. This drive circuit is made up of a double gate transistor with gates having different gate oxide film thicknesses. When the circuit block is in its standby state, the gate of the double gate transistor having a thinner gate oxide film is turned off and that having a thicker gate oxide film is turned on. This arrangement allows a reduction in the leakage currents of both the circuit block and the drive circuit while allowing the drive circuit to deliver or cut off power to the circuit block.

Abstract: Methods and apparatus are provided for varying one or more of a supply voltage and reference voltage in an integrated circuit, using independent control of a diode voltage in an asymmetrical double-gate device. An integrated circuit is provided that is controlled by one or more of a supply voltage and a reference voltage. The integrated circuit comprises an independently controlled asymmetrical double-gate device to adjust one or more of the supply voltage and the reference voltage. The independent control may comprise, for example, a back gate bias. The independently controlled asymmetrical double-gate device may be employed in a number of applications, including voltage islands, static RAM, and to improve the power and performance of a processing unit.

Abstract: A semiconductor device includes a semiconductor substrate, a first lower-layer line for supplying power to a transistor formed on the semiconductor substrate, a first interlayer line which is connected to the first lower-layer line, and an allowable current of which is larger than that of the first lower-layer line; and an upper-layer line which is provided above the first interlayer line and receives power input from outside. The first interlayer line is connected to the upper-layer line through a switch circuit formed on the semiconductor substrate.

Abstract: A programmable logic device (PLD) includes a delay circuit and a body-bias generator. The delay circuit has a delay configured to represent a delay of user circuit implement in the PLD. The body-bias generator is configured to adjust the body bias of a transistor within the user circuit. The body-bias generator adjusts the body bias of the transistor in response to a level derived from the signal propagation delay of the delay circuit.

Abstract: A circuit for biasing the bulk of a MOS transistor, including a capacitive element connecting the bulk of the MOS transistor to a source of an voltage.

Abstract: A circuit arrangement including a capacitor in an n-type well is disclosed. A specific polarization of the capacitor ensures that a depletion zone arises in the well and the capacitor has a high ESD strength. An optionally present auxiliary doping layer ensures a high area capacitance of the capacitor despite high ESD strength.

Abstract: A method includes receiving a set of voltages comprising at least a first voltage, a second voltage, and a third voltage and biasing a well of a transistor based on the extreme voltage of the set of voltages. Biasing the well of the transistor can include concurrently providing a first signal and a second signal based on a comparison of the first voltage and the second voltage and selectively coupling the well of the transistor to a source of the extreme voltage of the set of voltages based on the first signal, the second signal, and the third voltage. An electronic device comprises a transistor and a power switching module. The power switching module includes a set of inputs, each input configured to receive a corresponding one of a set of voltages comprising at least a first voltage, a second voltage, and a third voltage, and includes an output coupled to a well of the transistor, the output configured to provide the extreme voltage of the set of voltages.

Abstract: A body biasing control circuit capable of being shared by a plurality of macro blocks and can independently control body voltages of a plurality of macro blocks. The body biasing control circuit includes a lookup table for storing a plurality of indexes where each index is associated with a body voltage appropriate for an operating state of a corresponding macro block. A control unit receives a corresponding index from the lookup table and generates a plurality of body voltages appropriate for an operating state of a macro block corresponding to the index and supplies the body voltages to the macro block.