Abstract: Methods and apparatus for capacitive voltage division are provided, an example apparatus having an input and an output and including a first switched capacitor circuit. In some embodiments, the capacitive voltage divider includes first and second MOSFETs. A first capacitor is coupled between the drain of the first MOSFET and the input to the capacitive voltage divider. A first circuit coupled to the drain of the first MOSFET is configured to pull down the drain of the first MOSFET and thus apply a reverse bias to a first junction diode internal to the first MOSFET between the drain and the bulk of the first MOSFET. A second capacitor is coupled between the source of the first MOSFET and the drain of the second MOSFET. A second circuit is configured to reverse bias a second junction diode between the drain and bulk of the second MOSFET.

Abstract: In one embodiment, an apparatus for reducing leakage in an electronic circuit (e.g., a CMOS circuit) includes a power switch transistor configured to selectively couple or decouple a voltage to a logic portion of the electronic circuit. The power switch transistor receives a first voltage during an active mode of the electronic circuit and receives a second voltage during a sleep mode of the electronic circuit. The power switch transistor has a bulk region that is biased using the first voltage during sleep mode. The power switch transistor has a gate region that is biased using the first voltage during sleep mode.

Abstract: Apparatus and methods for providing multi-mode clock signals are disclosed. In some embodiments, a multi-mode driver configured to receive a first clock signal, and to selectively output a different clock signal in response to one or more signals from a controller is provided. The driver can include an H-bridge circuit without substantial increases in the size of the design area. Advantageously, lower jitter and improved impedance matching can be accomplished.

Abstract: A MOS transistor including a first MOS transistor M1 to be used as a resistor; an input voltage source 1 connected to the source of the first MOS transistor for applying an input voltage Vin; and a gate voltage source 6 connected to the gate of the first MOS transistor for applying a gate voltage Vg. The gate voltage Vg and the input voltage Vin are set within a range where a gate-source voltage and source-drain voltage of the first MOS transistor cause the first MOS transistor to operate in a non-saturation region and also are set to avoid the first MOS transistor operating in an operation region with leakage current. Fluctuations of the resistance value resulting from a change in leakage current due to manufacturing variations are reduced and favorable temperature characteristics are obtained.

Abstract: Provided is a graphene device and a method of manufacturing the same. The graphene device may include an upper oxide layer on at least one embedded gate, and a graphene channel and a plurality of electrodes on the upper oxide layer. The at least one embedded gate may be formed on the substrate. The graphene channel may be formed on the plurality of electrodes, or the plurality of electrodes may be formed on the graphene channel.

Abstract: The present disclosure relates to threshold voltage modification via a voltage generator connected to bulk nodes of transistors.

Abstract: A dynamically self-bootstrapping circuit for a switch features a resistor in series with the control node of the switch. A bypass switch connects a control node to ground. When the switch is in an off-state, the bypass switch is enabled.

Abstract: A transmission gate includes first and second MOS transistors of opposite conductivity type coupled in parallel with each other. Each transistor includes a body connection that is separately biased by corresponding first and second biasing circuits. The first biasing circuit generates a first bias voltage having a voltage level that is generated as a function of the signal at the first node and a first (for example, positive) reference voltage. The second biasing circuit generates a second bias voltage having a voltage level that is generated as a function of the signal at the first node and a second (for examples ground) reference voltage.

Abstract: One embodiment is a gate drive circuitry for switching a semiconductor device having a non-isolated input, the gate drive circuitry having a first circuitry configured to turn-on the semiconductor device by imposing a current on a gate of the semiconductor device so as to forward bias an inherent parasitic diode of the semiconductor device. There is a second circuitry configured to turn-off the semiconductor device by imposing a current on the gate of the semiconductor device so as to reverse bias the parasitic diode of the semiconductor device wherein the first circuitry and the second circuitry are coupled to the semiconductor device respectively through a first switch and a second switch.

Abstract: A voltage switching circuit selects a voltage from among a plurality of input voltages in response to a selection signal and outputs the selected voltage from an output terminal. The voltage switching circuit includes a first PMOS transistor that outputs a power supply voltage for operating a logic circuit of an output terminal. A second PMOS transistor outputs a first voltage higher than the power supply voltage to the output terminal. A third PMOS transistor outputs a second voltage lower than the power supply voltage to the output terminal. A well potential control section controls well voltages of the first and third transistors to be the power supply voltage where the power supply voltage and the second voltage are output to the output terminal, and controls the well voltages of the first and third transistors to be the first voltage where the first voltage is output to the output terminal.

Abstract: A semiconductor device includes a first circuit, a second circuit, and a first voltage dividing circuit. The first circuit is coupled to a first terminal. The first circuit is operable by a first voltage supplied from the first terminal. The second circuit is coupled through a first resistive element to the first terminal. The second circuit is operable by a second voltage supplied through the first resistive element from the first terminal. The second voltage is smaller in absolute value than the first voltage. The first voltage dividing circuit is coupled to a first node between the first resistive element and the second circuit. The first voltage dividing circuit has a conductive state and a non-conductive state. The first voltage dividing circuit is kept in the conductive state while applying the first voltage to the first terminal to allow the first circuit to operate by the first voltage.

Abstract: A voltage supply circuit includes a booster circuit and a ripple filter circuit. The ripple filter circuit has a first resistor connected to a first output terminal at one end thereof. The ripple filter circuit also has a first switch circuit connected between the other end of the first resistor and a second output terminal. In addition, the ripple filter circuit has a second switch circuit connected between the first output terminal of the booster circuit and the first switch circuit.

Abstract: Disclosed is a bias circuit with a first resistor connected between the supply voltage and a feedback node. Resistors are connected in series between the feedback node and the reference supply voltage. The connections between the resistors define at least one bias voltage. A second resistor is connected between the feedback node and a first drain node. A first field-effect transistor has a first gate node, the first drain node, and a first source node. The gate node is connected to the first supply voltage. A second field-effect transistor has a second gate node, a second drain node, and a second source node. The second drain node is connected to the first source node. The second gate node is connected to the bias voltage. The second source node is connected to an output signal node. The output signal node capable of experiencing an overshoot voltage.

Abstract: A light-emitting device driving circuit capable of reliably performing emission control on a light-emitting device of a low emission threshold (about 10 mA or less) and capable of correcting a distortion due to the Early effect of a transistor in the drive current supplied to the light emitting device. The light limiting device driving circuit includes a current control unit (101) which controls the value of a main current based on a control voltage, a bias current source (CC1) for subtracting a bias current from the main current, and a switching unit (103) which controls emission of light from the light-emitting device by switching, based on the drive signal, a current obtained by subtracting the bias current from the main current or a current based on the current obtained by the subtraction.

Abstract: A semiconductor integrated circuit includes a cascode circuit having a transistor, a detector circuit and a bias generator circuit. A bias is applied to a substrate of the transistor. The detector circuit generates a signal related to a threshold voltage of the transistor. The bias generator circuit generates the bias based on the signal generated by the detector circuit.

Abstract: Metal-oxide semiconductor (MOS) transistors that are operable at voltages below 1.5V, that are area efficient, and that exhibit improved drive strength and leakage current that are disclosed. A dynamic threshold voltage control scheme is used that does not require a change to existing MOS technology processes. Threshold voltage of the transistor is controlled, such that in the Off state, the threshold voltage of the transistor is set high, keeping the transistor leakage to a small value. The advantages provided by apply to dynamic logic, as well as in the specific well separation imposed by design rules because well potential difference are lower than the supply voltage swing.

Abstract: A reversal charge pump circuit generates a negative voltage from an input voltage received from an input terminal, and provides an output terminal with the negative voltage. The charge pump circuit achieves increased voltage stability and avoids breakdown voltage problems, with an uncomplicated structure. The circuit may have first and second capacitors, first through fourth switches, and a voltage control circuit. The voltage control circuit controls the voltage provided to the first capacitor. The switches are on/off controlled by signals from a control circuit.

Abstract: A power semiconductor component including a semiconductor body and two load terminals is provided. Provided furthermore is a potential probe positioned to tap an electric intermediate potential of the semiconductor body at a tap location of the semiconductor body for an electric voltage applied across the two load terminals, the intermediate potential being intermediate to the electric potentials of the two load terminals, but differing from each of the two electric potentials of the two load terminals.

Abstract: A circuit can include an NMOS transistor having a drain and a source, a p-well containing the drain and the source, an n-well under the p-well, a circuit node, and a connection element connecting the n-well to the circuit node. The connection element can include a diode having an anode terminal connected to the circuit node and a cathode terminal connected to the n-well, a resistor having a first terminal connected to the circuit node and a second terminal connected to the n-well, a conductor directly connecting the n-well to the circuit node, or a well switch configured to connect the n-well to the circuit node during an enable phase of a switching signal and to electrically float the n-well during a non-enable phase of the switching signal. The diode can include a diode-connected transistor. The circuit node can be configured to receive a predetermined voltage having a magnitude equal to or greater than an upper supply voltage.

Abstract: An integrated circuit includes a substrate, a storage device formed in the substrate to hold bias settings, and operational blocks formed in the substrate, each operational block including an operational circuit and a charge pump to provide well bias voltages to the operational circuit in response to one or more of the bias settings. A method for testing an integrated circuit having two or more operational blocks includes: (a) determining a maximum operating speed of each of the blocks at a minimum supply voltage; (b) selecting a block that has a slow operating speed; (c) selecting a well bias to speed up the selected block; (d) selecting a supply voltage to meet a target operating frequency at the selected well bias and measuring power; (e) repeating acts (b)-(d) while the measured power is less than a baseline power; and (f) saving the selected well bias and supply voltage settings for operation of the integrated circuit.

Abstract: A challenge in outputting a voltage near the midpoint potential in a semiconductor switch which operates based on a low voltage power supply is to avoid a decrease in operation speed and a deterioration in accuracy of the output voltage which would be caused due to an increase in ON-resistance or occurrence of current leakage. Thus, a structure including a gray level generation circuit, an analog switch circuit and a backgate voltage control circuit is provided wherein the backgate voltage of each of an N-channel MOS transistor and a P-channel MOS transistor of the analog switch circuit to which the voltage of the gray level generation circuit is input is supplied from the backgate voltage control circuit which has an equal structure as that of the gray level generation circuit.

Abstract: A method and an apparatus powers down an analog integrated circuit. A power down circuit is electrically coupled to the analog circuit and is adapted to power down the analog circuit in response to receiving a power down signal. A node protection circuit is electrically coupled to the analog circuit and is adapted to provide a predetermined voltage potential to at least one predetermined node in the analog circuit in response to receiving the power down signal when a voltage potential at the at least one predetermined node is not determined by the power down circuit.

Abstract: A circuit includes a first comparator block configured to output a voltage equal to a higher of a supply voltage and a bias voltage, a second comparator block configured to output a voltage equal to a higher of the bias voltage and an external voltage supplied through an Input/Output (IO) pad, and a third comparator block configured to output a voltage equal to a higher of the output of the first comparator block and the output of the second comparator block. A voltage across one or more constituent active element(s) of each of the first comparator block, the second comparator block, and the third comparator block is within an upper tolerable limit thereof during each of a normal operation, a failsafe operation, and a tolerant operation.

Abstract: Improved process variation sensors and techniques are disclosed, wherein both global and local variations associated with transistors on an integrated circuit can be monitored. For example, respective circuits for sensing a global process variation, a local process variation between neighboring negative-channel type transistors, and a local process variation between neighboring positive-channel type transistors are disclosed.

Abstract: An output driving device capable of improving a slew rate is provided. The output driving device includes a push-pull type driving unit configured with a pull-up PMOS transistor and a pull-down NMOS transistor, wherein body biases of the pull-up PMOS transistor and the pull-down NMOS transistor are controlled for control of a slew rate of an output signal of the driving unit.

Abstract: A technique for a reverse conducting semiconductor device including an IGBT element domain and a diode element domain that utilize body regions having a mutual impurity concentration, that makes it possible to adjust an injection efficiency of holes or electrons to the diode element domain, is provided. When a return current flows in the reverse conducting semiconductor device that uses an NPNP-type IGBT, a second voltage that is higher than a voltage of an emitter electrode is applied to second trench gate electrodes of the diode element domain. N-type inversion layers are formed in the periphery of the second trench gate electrodes, and the electrons flow therethrough via a first body contact region and a drift region which are of the same n-type. The injection efficiency of the electrons to the return current is increased, and the injection efficiency of the holes is decreased.

Abstract: A dormant mode target semiconductor device within a leakage current target unit is identified for mitigating leakage current to prevent it from reaching catastrophic runaway. A leakage current shift monitor unit is electrically connected to the output node of the leakage current target unit and collects leakage current from the selected target semiconductor device for two consecutive predefined temporal periods and measures the difference between the collected leakage currents. A comparator receives and compares the outputs of the current shift monitor unit and a reference voltage generator. The comparator propagates an alert signal to the leakage current target unit when the leakage voltage output from the leakage current shift monitor unit exceeds the reference voltage, a condition that indicates that the leakage current is about to approach catastrophic runaway levels.

Abstract: An internal power-supply circuit generates an internal voltage based on a reference voltage, and has an external-power-supply terminal to which an external power-supply voltage having a first potential is applied during a normal operation and an external power-supply voltage having a second potential that is higher than the first potential is applied during a burn-in acceleration test, a reference-voltage generating unit for generating the reference voltage from the external power-supply voltage, and an internal-voltage generating unit for generating the internal voltage based on the reference voltage.

Abstract: Systems and methods for integrated circuits comprising multiple body biasing domains. In accordance with a first embodiment of the present invention, a semiconductor structure comprises a substrate of first type material. A first closed structure comprising walls of second type material extends from a surface of the substrate to a first depth. A planar deep well of said second type material underlying and coupled to the closed structure extends from the first depth to a second depth. The closed structure and the planar deep well of said second type material form an electrically isolated region of the first type material. A second-type semiconductor device is disposed to receive a first body biasing voltage from the electrically isolated region of the first type material. A well of the second-type material within the electrically isolated region of the first type material is formed and a first-type semiconductor device is disposed to receive a second body biasing voltage from the well of second-type material.

Abstract: An apparatus for generating an internal voltage in a semiconductor integrated circuit includes a first voltage generating unit configured to detect a feedback voltage level of a first internal voltage and perform a pumping operation, thereby generating a first internal voltage, and a second voltage generating unit configured to generate a second internal voltage by detecting a feedback voltage level of the second internal voltage, performing level shifting on the detected feedback voltage level, receiving the first internal voltage, and generating the second internal voltage based on the level shifted feedback voltage signal and the received first internal voltage.

Abstract: Methods and devices for leakage current reduction are described. A regulator transistor is connected to a switch to bias the transistor with a first voltage during an ON state and a second voltage during the OFF state of the transistor. The switchable bias allows leakage current decrease and “on” resistance increase of the transistor.

Abstract: A regulator with decreased leakage and low loss for a power amplifier is described. Switching circuitry is used to connect the regulator input bias to a bias control voltage when the power amplifier is to be operated in an on condition or to a voltage generator when the power amplifier is to be operated in an off condition.

Abstract: A balanced input inverter circuit includes a first P-type MOS transistor including a gate terminal connected to an input, a source terminal connected to a first power source potential, and a drain terminal connected to an output, a first N-type MOS transistor including a gate terminal connected to the input, a drain terminal connected to the output, and a source terminal connected to a second power source potential, a first inverter circuit including an input terminal connected to an inverted input, and an output terminal connected to a back gate terminal of the first N-type MOS transistor, a first diode connected between the first power source potential and a first power source terminal of the first inverter circuit, a second inverter circuit including an input terminal connected to the inverted input, and an output terminal connected to a back gate terminal of the first P-type MOS transistor, and a second diode connected between the second power source potential and a second power source terminal of the sec

Abstract: A comparator includes a plurality of switches, a capacitor, an amplifier, and a latch. The switches provide an input signal during a first period and provide a reference signal during a second period. A first switch among the switches is composed of a first transistor. The capacitor receives the input signal during the first period and receives the reference signal during the second period. The amplifier is coupled to the capacitor for receiving a difference voltage between the input signal and the reference signal and amplifies the difference voltage during the second period to generate an amplified result. The determining circuit provides a digital signal according to the amplified result.

Abstract: A substrate voltage control technique that prevents the operating speed from being decreased and suppresses a leakage current due to a lower threshold voltage with respect to a low voltage use. Since a center value of the threshold voltages is detected by plural replica MOS transistors, and a substrate voltage is controlled to control a center value of the threshold voltages, thereby making it possible to satisfy a lower limit of the operating speed and an upper limit of a leakage current of the entire chip. On the other hand, the substrate voltage is dynamically controlled during the operation of the chip, thereby making it possible to decrease the center value of the threshold voltages when the chip operates to improve the speed, and to increase the center value of the threshold voltages after the operation of the chip to reduce the leakage current of the entire chip.

Abstract: The invention provides a shift register which can operate normally while suppressing a delay of signal and a rounding of waveform. The shift register of the invention includes a plurality of stages of flip-flop circuits each of which includes a clocked inverter. The clocked inverter includes a first transistor and a second transistor which are connected in series, a first compensation circuit including a third transistor and a fourth transistor which are connected in series, and a second compensation circuit including a fifth transistor and a transmission gate. According to the first compensation circuit, a timing at which a signal outputted from the flip-flop circuit rises or falls can be controlled in synchronization with an output of two stages before. The second compensation circuit can control a clock signal input can be controlled.

Abstract: A semiconductor integrated circuit design support system having a partial power control mechanism includes a partial power control simulation program configured to perform a partial power control simulation on the basis of a circuit description of the semiconductor integrated circuit and a power specifications description, a power mode transition detection program configured to detect a power mode which is run during execution of the partial power control simulation and record power mode information of an examined power mode, and a power mode transition check program configured to check whether the examined power mode recorded at the time of execution of partial power control is used and output a check result.

Abstract: A step-down circuit is connected between a power supply node for supplying a supply voltage and an internal power supply line for supplying a power to the object circuit and steps-down the supply voltage, and supplies the stepped-down voltage to the object circuit through the internal power supply line. The step-down circuit includes a comparison circuit that compares a reference voltage with the voltage of the internal power supply line, and a driver that adjusts a current flowing between the internal power supply line and the power supply node according to the comparison result of the comparison circuit. The activity level of the driver is controlled so as to rise in a predetermined rising period synchronously with an activated operation of the object circuit and to fall in a predetermined falling period that comes after the rising period.

Abstract: A transmission gate circuit includes a first PMOS device, a first NMOS device, a second PMOS device, a second NMOS device, and a third transistor. A gate electrode, a first electrode and a second electrode of the first PMOS device are coupled to a first control signal, an input end, and an output end, respectively. A gate electrode, a first electrode and a second electrode of the first NMOS device are coupled to a second control signal, the input end, and the output end, respectively. A gate electrode, a first electrode and a second electrode of the second PMOS device are coupled to the first control signal, an input end, and a body electrode of the first PMOS device, respectively. A gate electrode, a first electrode, and a second electrode of the second NMOS device are coupled to the second control signal, a body electrode of the first PMOS device, and the output end, respectively.

Abstract: A challenge in outputting a voltage near the midpoint potential in a semiconductor switch which operates based on a low voltage power supply is to avoid a decrease in operation speed and a deterioration in accuracy of the output voltage which would be caused due to an increase in ON-resistance or occurrence of current leakage. Thus, a structure including a gray level generation circuit, an analog switch circuit and a backgate voltage control circuit is provided wherein the backgate voltage of each of an N-channel MOS transistor and a P-channel MOS transistor of the analog switch circuit to which the voltage of the gray level generation circuit is input is supplied from the backgate voltage control circuit which has an equal structure as that of the gray level generation circuit.

Abstract: A system-on-a-chip and a power gating circuit thereof are provided. The power gating circuit includes a first transistor, a charge pump circuit, and a hold circuit. A gate terminal of the first transistor is controlled by a first input signal. A first source/drain terminal of the first transistor is coupled to a first voltage. A second source/drain terminal of the first transistor outputs an output voltage. The charge pump circuit is coupled to a bulk terminal of the first transistor for changing a bulk voltage of the first transistor according to a second input signal. The hold circuit is coupled to the bulk terminal of the first transistor for holding the bulk voltage of the first transistor.

Abstract: A circuit includes an NMOS transistor having a drain and a source, a p-well containing the drain and the source, an n-well under the p-well, and a first well switch configured to selectively connect the n-well to a predetermined voltage in response to an enable phase of a first switching signal. The first well switch can be configured to connect the n-well to the predetermined voltage during the enable phase of the first switching signal and to electrically float the n-well during a non-enable phase of the first switching signal.

Abstract: Disclosed are a spin transistor and a method of operating the spin transistor. The disclosed spin transistor includes a channel formed of a magnetic material selectively passing a spin-polarized electron having a specific direction, a source formed of a magnetic material, a drain, and a gate electrode. When a predetermined voltage is applied to the gate electrode, the channel selectively passes a spin-polarized electron having a specific direction and thus, the spin transistor is selectively turned on.

Abstract: A semiconductor integrated circuit design method includes a step (L) of providing layout information for laying out elements making up a logical circuit on a semiconductor substrate; a step (P) of providing logical circuit information; a step (a) of classifying logical circuits in response to the logical circuit propagation route of a signal based on the logical circuit information and a step (b) of isolating the logical circuits forming the route obtained in the classifying step (a) for each number of stages; a step (c) of classifying the elements making up the logical circuit according to substrate voltage for each number of stages of the logical circuit; and a layout correction step (d) of correcting the layout information so that each element with the larger stage number of the logical circuit is placed at a point closer to a substrate contact.

Abstract: A control target circuit formed by transistors is provided with a power supply level control circuit for controlling the power supply voltage supplied to the control target circuit, a substrate level control circuit for controlling the substrate voltages of the transistors, and a special substrate level control circuit for controlling the substrate voltages during transition of the power supply voltage through a different system. During transition of the power supply voltage, the special substrate level control circuit positively controls the substrate voltages such that desired substrate voltage levels are reached earlier, whereby the time for the substrate voltages to transfer to the desired substrate voltage levels is shortened. To suppress latch-up and breakdown voltage degradation, the special substrate level control circuit controls supply of voltages and currents so as to comply with the potential difference conditions defined between the power supply voltage and the substrate voltages.

Abstract: Systems and methods for integrated circuits comprising multiple body biasing domains. In accordance with a first embodiment of the present invention, a semiconductor structure comprises a substrate of first type material. A first closed structure comprising walls of second type material extends from a surface of the substrate to a first depth. A planar deep well of said second type material underlying and coupled to the closed structure extends from the first depth to a second depth. The closed structure and the planar deep well of said second type material form an electrically isolated region of the first type material. A second-type semiconductor device is disposed to receive a first body biasing voltage from the electrically isolated region of the first type material. A well of the second-type material within the electrically isolated region of the first type material is formed and a first-type semiconductor device is disposed to receive a second body biasing voltage from the well of second-type material.

Abstract: A voltage regulation module which includes an adjustable voltage which reduces the positive supply voltage and increases the negative supply voltage during a lower power mode. The voltage regulation module includes a voltage generator which provides an N-type substrate bias voltage at the normal operating voltage level of the positive supply voltage and which provides a P-type substrate bias voltage at the normal operating voltage level of the negative supply voltage during the lower power mode. Thus, the supply voltage levels are adjusted rather than the substrate bias voltages during the lower power mode. The voltage generator may be implemented as a voltage regulator, or may be implemented as a bias generator or charge pump or the like.

Abstract: Analog comparison circuits are provided, each of which compares the potentials of the same stage of a first boosting cell row and a second boosting cell row and selecting and outputting the lower potential. The P-well potentials of switching devices having a triple-well structure are controlled using the output potentials of these analog comparison circuits. As a result, the amplitude of the P-well potential can be suppressed and a common P-well region can be arranged.

Abstract: A memory integrated circuit device may include a first temperature sensing unit, a first voltage adjusting unit, and a MOS back bias voltage outputting unit. The first voltage adjusting unit may be configured to output a voltage based on an output signal of the temperature sensing unit such that the voltage output changes based on changes in a sensed temperature. The MOS back bias voltage outputting unit may be configured to receive the voltage output by the voltage adjusting unit and configured to output the MOS back bias voltage based on the voltage output by the first voltage adjusting unit.

Abstract: A semiconductor integrated circuit includes a first clock pin controller that receives a mirror function signal and a test mode signal to generate a first input buffer control signal in response to the mirror function signal in a normal mode. A second clock pin controller receives the mirror function signal and the test mode signal to generate a second input buffer control signal, which is an inverted signal of the first input buffer control signal, in response to the mirror function signal in the normal mode. An input buffer unit generates output signals of first and second pins in response to the first input buffer control signal and the second input buffer control signal, respectively.