Abstract: A control circuit for substrate potential regulation for an integrated circuit device. The control circuit includes a current source configured to generate a reference current. A variable resistor is coupled to the current source. The variable resistor is configured to receive the reference current and generate a reference voltage at a node between the current source and the variable resistor. The reference voltage controls the operation of a substrate potential regulation circuit coupled to the node.

Abstract: Provided is a method of operating a semiconductor device, wherein an operating mode is set by adjusting timing of a voltage pulse or by adjusting a voltage level of the voltage pulse.

Abstract: The present invention provides a high voltage tolerant regulated inverting charge pump circuit utilizing low-voltage semiconductor devices, capable of operation directly from a high voltage source. The circuit according to the present invention comprises a plurality of high voltage tolerant pre-driver circuits, connected to the high voltage source, for driving the charge pump low voltage switching devices appropriately for reliable operation. A flying capacitive element connected to the high voltage source through a plurality of low voltage semiconductor devices acting as a switch, peak current limiter, and cascode device. An output capacitive element connected to the flying capacitive element through a plurality of low voltage semi-conductor devices acting as a switch, peak current limiter, regulating element and cascode device.

Abstract: A radiation hardened motor drive stage utilizes a non-radiation hardened P-channel FET switch. The radiation hardened motor drive stage includes a non-radiation hardened P-channel FET switch that is connected three (3) pairs of upper and lower switch blocks or legs wherein the output of each pair is connected to a motor winding switch terminal. The upper switch blocks or legs are connected the P-channel switch a. The lower switch block or legs are connected to a negative power bus. The negative power bus permits the N-channel FETS or IGTS within the switch blocks or legs exposed to ionized radiation to be controlled, even when their gate threshold voltage has dropped below zero volts.

Abstract: A method involves regulating an output voltage of an output transistor of a voltage regulator circuit by providing a first voltage to a front gate of the output transistor, and simultaneously with providing the first voltage to the output transistor, providing a second voltage to a back gate of the output transistor, in a manner that regulates the output voltage around a target value.

Abstract: A power switch includes first and second MOS transistors in series between first and second nodes. Both the first and second transistors have a gate coupled to its substrate. First and second resistive elements are coupled between the gate of the first transistor and the first node, and between the gate of the second transistor and the second node, respectively. A triac is coupled between the first and second nodes. The gate of the triac is coupled to a third node common to the first and second transistors. A third MOS transistor has a first conduction electrode coupled to the gate of the first transistor and a second conduction electrode coupled to the gate of the second transistor.

Abstract: Disclosed is an improved substrate bias feedback circuit, and a method for operating the same.

Abstract: The graphene electronic device may include a gate oxide on a conductive substrate, the conductive substrate configured to function as a gate electrode, a pair of first metals on the gate oxide, the pair of the first metals separate from each other, a graphene channel layer extending between the first metals and on the first metals, and a source electrode and a drain electrode on both edges of the graphene channel layer.

Abstract: A dynamic biasing circuit of the substrate of a MOS power transistor may include a first switch configured to connect the substrate to a current source which forward biases the intrinsic source-substrate diode of the transistor, when the gate voltage of the transistor turns the transistor on. The current source may include a stack of diodes in the same conduction direction as the intrinsic diode between the substrate and a supply voltage.

Abstract: A pressure contact arrangement includes a pressure contact device having an upper contact piece and a lower contact piece, one or more vertical first semiconductor chips and a peripherally closed adhesive bead. Each vertical first semiconductor chip has an upper side, a lower side opposite the upper side, a peripherally closed narrow side adjoining the upper side and the lower side and connecting the upper and lower sides, an upper electrical contact face arranged on the upper side, and a lower electrical contact face arranged on the lower side. The peripherally closed adhesive bead surrounds each vertical first semiconductor chip and fastens each vertical first semiconductor chip to the pressure contact device. A peripherally closed connecting face is provided between each adhesive bead and the narrow side of the corresponding vertical first semiconductor chip that laterally surrounds the vertical first semiconductor chip.

Abstract: A method for detecting an attack in an electronic microcircuit comprises: forming the microcircuit in a substrate, forming in the substrate a first well electrically isolated from the substrate, by a second well and an embedded well, forming in the first and second wells a data processing circuit comprising a ground terminal formed in the first well and a power supply terminal formed in the second well, and activating a detection signal when a voltage at the ground or power supply terminal of the data processing circuit crosses a threshold voltage.

Abstract: A method for generating a reference voltage in an integrated circuit device that is powered by a low voltage power includes generating a coarse first reference voltage using a coarse reference generator, routing the coarse first reference voltage to a boost regulator as an input reference voltage by a hand-off switch circuit, the boost regulator generating an initial-state stepped-up supply based on the first reference voltage, and generating at least two outputs of a second, more accurate, reference voltage from the stepped-up supply voltage using a fine-resolution reference generator. The second reference can be then looped back to the boost regulator, thus, generating a more accurate steady-state stepped-up supply voltage.

Abstract: A semiconductor integrated circuit device includes a functional circuit part that includes a plurality of field effect transistors, a mode control circuit that receives a first control signal and that generates a second control signal that is used to change a logic state of the functional circuit part, an output control circuit that receives an output signal of the functional circuit part and controls output of the output signal, and a control circuit that receives the second control signal and that generates a third control signal to the output control circuit. During a time period when the functional circuit part changes a logic state according to the second control signal, the output control circuit inverts the output signal of the functional circuit part according to the third control signal.

Abstract: A die including a first set of power tiles arranged in a first array and having a first voltage; a second set of power tiles arranged in a second array offset from the first array and having a second voltage; a set of power mesh segments enclosed by the second set of power tiles and having the first voltage; a first power rail passing underneath the set of power mesh segments and the first set of power tiles; and a set of vias operatively connecting the power rail with the set of power mesh segments and the first plurality of power tiles.

Abstract: A temperature compensation circuit, applied on a metal oxide semiconductor (MOS) transistor, with a threshold voltage varying with respect to a temperature value of the MOS transistor, for having the MOS transistor corresponding to an equivalent threshold voltage substantially with a constant value throughout a temperature range, comprises a voltage generator. The voltage generator provides a voltage proportional to absolute temperature (VPTAT) to drive the body of the MOS transistor in such way that a variation of the threshold voltage due to temperature variation of the MOS transistor is substantially compensated with a variation of the threshold voltage due to body-source voltage variation of the MOS transistor, so that the MOS transistor corresponds to the equivalent threshold voltage that is temperature invariant.

Abstract: A semiconductor device includes: a first field-effect transistor (FET); and a second FET of similar polarity to the first FET, wherein a body of the first FET is electrically coupled to a body of the second FET, and a source of the first FET is electrically coupled to a source of the second FET, such that a body voltage of the second FET controls a body voltage of the first FET.

Abstract: A pixel of an image sensor includes only two signal lines per pixel, a pinned photodiode for sensing light, a floating base bipolar transistor, and no reset and address transistors. The floating base bipolar transistor provides the pixel with a gain, which can increase pixel sensitivity and reduce noise. The pixel also incorporates a vertical blooming control structure for an efficient blooming suppression. The output terminals of the pixel are coupled to a common column output line terminated by a special current sensing correlated double sampling circuit, which is used for subtraction of emitter leakage current. Based on this structure, the pixel has high sensitivity, high response uniformity, low noise, reduced size, and efficient layout.

Abstract: A semiconductor device includes a semiconductor element; a body bias controller configured to generate a standby mode body bias control signal in a standby mode; and a body bias voltage generator configured to receive the standby mode body bias control signal from the body bias controller, generate a standby mode body bias voltage, and apply the standby mode body bias voltage to a body of the semiconductor element. The semiconductor device is capable of retaining data stored in a semiconductor element and blocking leakage current in the standby mode by controlling a body bias voltage, thereby increasing the integration degree of the semiconductor device.

Abstract: A method for switching between first and second voltages is provided. Initially, a first voltage is provided from a first input terminal to an output terminal through a first MOS transistor, and the first MOS transistor is deactivated. A back-gate of a second MOS transistor is shorted to the output terminal in response to the deactivation of the first MOS transistor and after a settling interval, and the second MOS transistor is activated while its back-gate is shorted to the terminal so as to provide a second voltage from a second input terminal to the output terminal.

Abstract: A semiconductor integrated circuit device includes a functional circuit part that includes a plurality of field effect transistors, a mode control circuit that receives a first control signal and that generates a second control signal that is used to change a logic state of the functional circuit part, an output control circuit that receives an output signal of the functional circuit part and controls output of the output signal, and a control circuit that receives the second control signal and that generates a third control signal to the output control circuit. During a time period when the functional circuit part changes a logic state according to the second control signal, the output control circuit inverts the output signal of the functional circuit part according to the third control signal.

Abstract: A voltage regulator for regulating a voltage level of a virtual power rail supplying power to logic circuitry in a low power data retention mode is disclosed. The voltage regulator comprises: switching circuitry having a transistor for coupling said virtual power rail to a power supply having a supply voltage level; control circuitry responsive to a signal indicating the logic circuitry is to enter the low data power retention mode to control the switching circuitry to switch to a conductive state in which the transistor is operating in a saturation region of operation and supplying a saturation current from the power supply via the virtual power rail to the logic circuitry; and a leakage power controller for adjusting a voltage level of the virtual power rail to control leakage power. The leakage power controller is configured to supply a bias voltage to the well in which the switching circuitry is formed, the saturation current of the switching circuitry being dependent on a value of the well bias voltage.

Abstract: Back-gate voltage control provides a high speed and low power consumption LSI operable in a wide temperature range in which a MOS transistor having back gates is used specifically according to operating characteristics of a circuit. In the LSI, an FD-SOI structure having an embedded oxide film layer is used and a lower semiconductor region of the embedded oxide film layer is used as a back gate. A voltage for back gates in logic circuits having a small load in logic circuit block is controlled in response to activation of the block from outside of the block. Transistors, in which the gate and the back gate are connected to each other, are used for the circuit generating the back gate driving signal, and logic circuits having a heavy load such as circuit block output section, and the back gates are directly controlled according to a gate input signal.

Abstract: As provided herein, in some embodiments, power consumption and/or chip area is reduced by bias circuits configured to provide bias conditions for more than one active circuit, thereby reducing the number of bias circuits in a design. Shared bias circuits may reduce the aggregate amount of on-chip area utilized by bias circuitry and may also reduce the total power consumption of a chip. Additionally and/or alternatively, bias circuits disclosed herein are configured to provide outputs that are less susceptible to changes in the voltage supply level. In particular, in some embodiments, bias circuits are configured to provide relatively constant bias conditions despite changes in the voltage supply level. In some embodiments, bias circuits are configured to provide bias conditions that compensate for perturbations caused by changes other inputs, in order to stabilize a particular operating point.

Abstract: An AD converter includes: AD conversion stages configured to generate digital data having a value corresponding to a relationship between two analog signals being input and amplifying two analog residual signals with a first amplifier and a second amplifier with gain to be controlled to output the signals; and a gain control part configured to control gain of the first amplifier and the second amplifier on the basis of a monitoring result of the output signals of the first amplifier and the second amplifier. The first amplifier and the second amplifier are formed of open-loop amplifiers, and the gain control part takes out amplitude information of the output signals of the first amplifier and the second amplifier in at least one of the AD conversion stages and performs gain control so that amplitude of the analog signals being output from the stage converges on setting amplitude being set.

Abstract: An image sensor includes an analog-to-digital converter receiving a pixel signal output. The converter includes a first inverting amplifier circuit having an input and an output, the first inverting amplifier circuit including a first bias circuit having a control node and configured to source current for first inverting amplifier circuit operation. The converter further includes a second inverting amplifier circuit having an input and an output, the second inverting amplifier circuit including a second bias circuit having a control node and configured to source current for second inverting amplifier circuit operation. The output of the first inverting amplifier circuit is coupled to the input of the second inverting amplifier circuit. A positive feedback circuit couples the output of the second inverting amplifier circuit to the control node of the first bias circuit.

Abstract: A thin film transistor is provided that includes a gate electrode, a source electrode, and a drain electrode, an oxide semiconductor active layer formed over the gate electrode, a fixed charge storage layer formed over a portion of the oxide semiconductor active layer, and a fixed charge control electrode formed over the fixed charged storage layer.

Abstract: A single pole double throw (SPDT) semiconductor switch includes a series connection of a first transmitter-side transistor and a first reception-side transistor between a transmitter node and a reception node. Each of the two first transistors is provided with a gate-side variable impedance circuit, which provides a variable impedance connection between a complementary pair of gate control signals. Further, the body of each first transistor can be connected to a body bias control signal through a body-side variable impedance circuit. In addition, the transmitter node is connected to electrical ground through a second transmitter-side transistor, and the reception node is connected to electrical ground through a second reception-side transistor. Each of the second transistors can have a body bias that is tied to the body bias control signals for the first transistors so that switched-off transistors provide enhanced electrical isolation.

Abstract: A tri-state control mechanism can be implemented for a line driver of a transmitter unit to switch the output impedance of the transmitter unit between a low impedance state in the transmit mode and a high impedance state in the receive mode while minimizing turn-off glitch. It may be determined whether a communication device comprising the transmitter unit is configured in a transmit operating mode or a receive operating mode. If the communication device is configured in the receive operating mode, a first bias voltage can be generated to bias output transistors of the line driver circuit in a sub-threshold state. If the communication device is configured in the transmit operating mode, a second bias voltage can be generated to bias output transistors of the line driver circuit in a saturation state.

Abstract: Embodiments relate to photo cell devices. In one embodiment, a trench-based photo cells provides very fast capture of photo-generated charge carriers, particularly when compared with conventional approaches, as the trenches of the photo cells create depleted regions deep within the bulk of the substrate that avoid the time-consuming diffusion of carriers.

Abstract: A diode string voltage adapter includes diodes formed in a substrate of a first conductive type. Each diode includes a deep well region of a second conductive type formed in the substrate. A first well region of the first conductive type formed on the deep well region. A first heavily doped region of the first conductive type formed on the first well region. A second heavily doped region of the second conductive type formed on the first well region. The diodes are serially coupled to each other. A first heavily doped region of a beginning diode is coupled to a first voltage. A second heavily doped region of each diode is coupled to a first heavily doped region of a next diode. A second heavily doped region of an ending diode provides a second voltage. The deep well region is configured to be electrically floated.

Abstract: An integrated circuit includes a first pad configured to carry a signal, a first receiver having an input node, a second receiver having an input node, a first pass gate, and a second pass gate. The first pass gate is coupled between the first pad and the input node of the first receiver. The first pass gate is configured to be turned on when the signal on the first pad is greater than a first voltage level. The second pass gate is coupled between the first pad and the input node of the second receiver. The second pass gate is configured to be turned on when the signal on the first pad is less than a second voltage level.

Abstract: A memory element capable of operating at high speed and reducing power consumption and a signal processing circuit including the memory element are provided. As a writing transistor, a transistor which is formed using an oxide semiconductor and has significantly high off-state resistance is used. In a memory element in which a source of the writing transistor is connected to an input terminal of an inverter, a control terminal of a transfer gate, or the like, the threshold voltage of the writing transistor is lower than a low-level potential. The highest potential of a gate of the writing transistor can be a high-level potential. When the potential of data is the high-level potential, there is no potential difference between a channel and the gate; thus, even when the writing transistor is subsequently turned off, a potential on the source side hardly changes.

Abstract: An integrated circuit includes a main power rail, a ground power rail as well as a virtual main power rail and a virtual ground power rail. Combinatorial logic circuitry is connected to draw its power from the virtual main power rail and the virtual ground power rail. Signal value storage circuitry is connected to draw its power from one of the main power rail and the ground power rail with the other power connection being to a virtual rail. The integrated circuit has an operational mode, a retention mode and a power off mode. In the retention mode, the voltage difference across the combinatorial logic circuitry is a low power voltage difference insufficient to support data processing operations whereas the voltage difference across the signal value storage circuitry is higher and is sufficient to support signal value retention within the signal value storage circuitry.

Abstract: Efficient reduction in power consumption is achieved by combinational implementation of a power cutoff circuit technique using power supply switch control and a DVFS technique for low power consumption. A power supply switch section fed with power supply voltage, a circuit block in which a power cutoff is performed by the power supply switch section, and a level shifter are formed in a DEEP-NWELL region formed over a semiconductor substrate. Another power supply switch section fed with another power supply voltage, a circuit block in which a power cutoff is performed by the power supply switch section, and a level shifter are formed in another DEEP-NWELL region formed over the semiconductor substrate. In this arrangement, there arises no possibility of short-circuiting between different power supplies via each DEEP-NWELL region formed over the semiconductor substrate.

Abstract: A semiconductor device includes a semiconductor substrate, a first lower-layer line for supplying power to a transistor formed on the semiconductor substrate, a first interlayer line which is connected to the first lower-layer line, and an allowable current of which is larger than that of the first lower-layer line; and an upper-layer line which is provided above the first interlayer line and receives power input from outside. The first interlayer line is connected to the upper-layer line through a switch circuit formed on the semiconductor substrate.

Abstract: There is provided a charge pump circuit suited for reducing the power consumption. A capacitor 201a, a capacitor 201b, a capacitor 201c, and switching elements 202a to 202k, for electrically connecting or separating capacitors 201a, 201b, and 201c, repeats: a first state where charge supplied from an input power-supply voltage VDD is accumulated in the capacitors 201a and 201b; a second state where the charge accumulated in the capacitor 201a is transferred to the third capacitor 201c, and a positive output power-supply voltage is held by the charge accumulated in the capacitor 201b; a third state where the charge supplied from an input power supply is accumulated in the capacitors 201a and 201b; and a fourth state where the charge accumulated in the capacitor 201b is transferred to the third capacitor 201c, and the positive output power-supply voltage VCC is held by the charge accumulated in the capacitor 201a.

Abstract: A die including a first set of power tiles arranged in a first array and having a first voltage; a second set of power tiles arranged in a second array offset from the first array and having a second voltage; a set of power mesh segments enclosed by the second set of power tiles and having the first voltage; a first power rail passing underneath the set of power mesh segments and the first set of power tiles; and a set of vias operatively connecting the power rail with the set of power mesh segments and the first plurality of power tiles.

Abstract: Solutions for optimizing a bulk bias across a substrate of an ETSOI device are disclosed. In one embodiment, an apparatus for optimizing a bulk bias across a substrate of an ETSOI device is disclosed, including: a sensing circuit for sensing at least one predetermined circuit parameter; a charging circuit for applying a bias voltage to the substrate of the ETSOI device; and a processing circuit connected to the sensing circuit and the charging circuit, the processing circuit configured to receive an output of the sensing circuit, and adjust the bias voltage applied to substrate of the ETSOI device in response to determining whether the bias voltage deviates from a target amount.

Abstract: A voltage regulation circuit includes: a first voltage divider that divides a regulation voltage with a predetermined division ratio to generate a division voltage; a first current driving force control unit configured to compare a reference voltage with the division voltage and generate a first control signal; a current driving unit configured to generate a driving current with a variable driving force based on the first control signal and a second control signal, and generate the regulation voltage; and a second current driving force control unit configured to generate the second control signal in accordance with a level variation of the regulation voltage.

Abstract: Circuits, and methods for reducing standby leakage power in Integrated Circuit (ICs) are disclosed. In an embodiment, an IC includes a core circuit, a first switch and a second switch, where the first switch is coupled between a power terminal of the core circuit and a power supply and the second switch is coupled between a ground terminal of the core circuit and a ground supply. The first switch and the second switch are configured to power ON and OFF the core circuit. The IC includes a first feedback circuit configured to control ON and OFF states of the first switch based on voltage at the power terminal, and a second feedback circuit configured to control ON and OFF states of the second switch based on voltage at the ground terminal of the core circuit during the standby mode for maintaining the logic state of the core circuit.

Abstract: Systems and methods for integrated circuits comprising multiple body biasing domains. In accordance with a first embodiment of the present invention, a semiconductor structure comprises a substrate of first type material. A first closed structure comprising walls of second type material extends from a surface of the substrate to a first depth. A planar deep well of said second type material underlying and coupled to the closed structure extends from the first depth to a second depth. The closed structure and the planar deep well of said second type material form an electrically isolated region of the first type material. A second-type semiconductor device is disposed to receive a first body biasing voltage from the electrically isolated region of the first type material. A well of the second-type material within the electrically isolated region of the first type material is formed and a first-type semiconductor device is disposed to receive a second body biasing voltage from the well of second-type material.

Abstract: Embodiments relate to a metal-oxide-semiconductor device including a metal-oxide-semiconductor field-effect transistor (MOSFET). The MOSFET includes a gate configured to change electrical characteristics based on a sensed chemical characteristic and a source and drain. One of the source and drain is connected to an analysis circuit, and a backgate is connected to an AC voltage source.

Abstract: Type-switching transistors, electronic devices including the same, and methods of operating thereof are provided. A type-switching transistor may include a plurality of gates corresponding to a channel layer. The plurality of gates may include a first gate for switching a type of the transistor and a second gate for controlling ON/OFF characteristics of the channel layer. The first and second gates may be disposed on one side of the channel layer so that the channel layer is not disposed between the first and second gates.

Abstract: Solutions for optimizing a bulk bias across a substrate of an ETSOI device are disclosed. In one embodiment, an apparatus for optimizing a bulk bias across a substrate of an ETSOI device is disclosed, including: a sensing circuit for sensing at least one predetermined circuit parameter; a charging circuit for applying a bias voltage to the substrate of the ETSOI device; and a processing circuit connected to the sensing circuit and the charging circuit, the processing circuit configured to receive an output of the sensing circuit, and adjust the bias voltage applied to substrate of the ETSOI device in response to determining whether the bias voltage deviates from a target amount.

Abstract: Some substituted biaryl ring systems may be useful in light-emitting devices, such as those comprising a light-emitting diode. For example, substituted bipyridinyl or substituted phenylpyridinyl may be useful in these devices. The substituted biaryl ring system may have at least two different substituents, including one on each ring on the biaryl system. The first substituent may include optionally substituted carbazolyl, optionally substituted diphenylamine, optionally substituted diphenylaminophenyl, and optionally substituted carbazolylphenyl. The second substituent may include optionally substituted benzimidazol-2-yl, optionally substituted benzoxazol-2-yl, and an optionally substituted benzothiazol-2-yl.

Abstract: A high-voltage MEMS biasing network. The network has a reset mode wherein a capacitive sensor is charged, and a functional mode wherein the MEMS biasing network provides a high impedance between the capacitive sensor and a bias voltage source. The network includes a biasing circuit, a mirror circuit, and a control circuit. The biasing circuit and the mirror circuit have a charging state and a high impedance state. The control circuit includes a first branch that controls the biasing circuit and a second branch that controls the mirror circuit. The biasing network receives a logic control signal, the first branch puts the biasing circuit into the charging state when the logic control signal is a first logic signal, and puts the biasing circuit into the high impedance state when the logic control signal is a second logic signal.

Abstract: An electronic circuit includes a transistor device that can be operated in a reverse operation mode and a control circuit. The transistor device includes a source region, a drain region, a body region and a drift region, a source electrode electrically connected to the source region, a pn junction formed between the body region and the drift region, a gate electrode adjacent the body region and dielectrically insulated from the body region, and a depletion control structure adjacent the drift region. The depletion control structure has a control terminal and is configured to generate a depletion region in the drift region dependent on a drive signal received at the control terminal. The control circuit is coupled to the control terminal of the depletion control structure and configured to drive the depletion control structure to generate the depletion region when the transistor device is operated in the reverse operation mode.

Abstract: Offset is canceled by determining a voltage level to set a body input of a transistor to. The body input of the transistor is set to the determined voltage level to cancel offset associated with the transistor.

Abstract: Switches with connected bulk for improved switching performance and bias resistors for even voltage distribution to improve reliability are described. In an exemplary design, a switch may include a plurality of transistors coupled in a stack and at least one resistor coupled to at least one intermediate node in the stack. The transistors may have (i) a first voltage applied to a first transistor in the stack and (ii) a second voltage that is lower than the first voltage applied to bulk nodes of the transistors. The resistor(s) may maintain matching bias conditions for the transistors when they are turned off. In one exemplary design, one resistor may be coupled between the source and drain of each transistor. In another exemplary design, one resistor may be coupled between each intermediate node and the first voltage. The resistor(s) may maintain the source of each transistor at the first voltage.

Abstract: An internal voltage adjusting circuit of a semiconductor memory device processes a period from activation to deactivation of a reset bar signal by dividing the period into a first period to a third period. In the first period, a peripheral circuit voltage is stabilized to a lowest value to suppress power consumption. In the second period in which a power source voltage is stabilized, the peripheral circuit voltage is set to a highest value to read out optimum internal voltage values from a fuse circuit in a stable manner. In the third period after reading out the optimum internal voltage values, the peripheral circuit voltage is returned to the lowest value to suppress the power consumption. When the reset bar signal is deactivated, the peripheral circuit voltage is set based on the optimum internal voltage values read out from the fuse circuit.