Abstract: A reference current generation circuit generates a first branch current that varies by a first percentage in response to variations in a first supply voltage and variations in transistor threshold voltage. The first branch current is mirrored to create a corresponding second branch current. A first portion (sub-current) of the second branch current is supplied through a first transistor, which exhibits the transistor threshold voltage wherein the first sub-current varies by a second percentage in response to the variations in the first supply voltage and variations in transistor threshold voltage, wherein the second percentage is greater than the first percentage. A second portion (sub-current) of the second branch current is supplied through a second transistor. The second portion of the second branch current is mirrored to create a reference current (IREF).

Abstract: A circuit for providing a bandgap voltage. The circuit includes a classic bandgap reference voltage generation circuit including first end second serially connected transistors acting as a current mirror to another portion of the classical bandgap reference circuit and being coupled between a supply voltage Vdd and an output resistor. The circuit also includes a current trimming circuit coupled in parallel with the classical bandgap reference generation circuit including a fixed element portion including a plurality of transistors and a switch portion including a plurality of switches. Each of the plurality of transistors is coupled to the supply voltage Vdd and to a one of the plurality of switches and each switch includes a fuse.

Abstract: The voltage generation circuit having a standard voltage generation circuit, a reference voltage, a minimum voltage setting circuit, and a voltage setting circuit that gradually sets voltage by switching a plurality of the gate transistors to switch a combination of resistive elements. The voltage generation circuit includes a differential amplifier that has one input terminal connected to the reference voltage generated by the standard voltage generation circuit and another input terminal connected to the minimum voltage setting circuit. The differential amplifier has an output node showing the result of a difference voltage of the inputs. The voltage generation circuit includes a pump control circuit that outputs a control signal controlling a charge-pump motion, based on the differential voltage, and a charge pump circuit that sets up and outputs the voltage by the control signal.

Abstract: A multi-channel current driver is provided. One of the channels includes a channel switch and a memory-type current mirror. A first end of the channel switch receives a reference current. A master current end of the memory-type current mirror is coupled to a second end of the channel switch. Wherein, a slave current end of the memory-type current mirror outputs a driving current according to the reference current when the channel switch provides the reference current to the memory-type current mirror, and the slave current end of the memory-type current mirror holds the driving current when the channel switch stops the reference current.

Abstract: A circuit block operates while receiving a clock from an external circuit. A load balance circuit is connected to a shared power supply terminal together with the circuit block, and provides predetermined power consumption. A clock detection unit detects input of the clock from an external circuit. When the clock detection unit detects stopping of input of the clock, the load balance circuit is switched to the active state.

Abstract: A disclosed voltage comparison circuit for detecting a voltage difference of two input signals includes one or more differential amplifier circuits, each of which has a differential pair of first and second input transistors each having an electrode to which a corresponding one of the input signals is input, a constant current circuit configured to generate constant current according to a control signal and supply the constant current to the first and second input transistors, and a first resistor connected between the constant current circuit and the first input transistor; and a current control circuit configured to control a value of the first constant current. The current control circuit controls the value so that a voltage difference between both ends of the first resistor becomes equal to a predetermined value.

Abstract: An embodiment of a bandgap voltage reference circuit for generating a bandgap voltage reference. Said embodiment comprises a current generator controlled by a first driving voltage for generating a first current depending on the driving voltage, and a first reference circuit element coupled to the controlled current generator for receiving the first current and generating a first reference voltage in response to the first current. The circuit further comprises a second reference circuit element for receiving a second current corresponding to the first current; said second reference circuit element is adapted to generate a second reference voltage in response to the second current. Said circuit further comprises a third reference circuit element for receiving a third current corresponding to the first current and generating the bandgap reference voltage in response to the third current, and an operational amplifier.

Abstract: Variations of the impedance of each output driver of a semiconductor device can be reduced, and high-speed calibration is achieved. A calibration circuit including a replica circuit having the same configuration as each pull-up circuit or pull-down circuit included in an output driver of a semiconductor device is provided within a chip. During a first calibration operation, the replica circuit is provided with voltage conditions that allow the maximum current to flow through the output driver so that an impedance of the replica circuit is equal to a value of an external resistor. During a second calibration operation, table parameters obtained in the first calibration operation are used to adjust the impedance of the output driver without use of the replica circuit.

Abstract: A semiconductor device includes an internal circuit configured to receive a first power supply voltage applied via a first power input terminal through a first power supply path and receive an internal power supply voltage to perform a predetermined circuit operation and an internal power supply voltage generator configured to receive a second power supply voltage for a power circuit applied via a second power input terminal through a second power supply path and generate the internal power supply voltage, wherein the second power supply path is separated from the first power supply path.

Abstract: A temperature sensing circuit includes a temperature-dependent voltage generating block configured to generate a plurality temperature-dependent voltages having voltage levels that are changed according to temperature; and a comparing block configured to compare each voltage level of the temperature-dependent voltages with a voltage level of a predetermined voltage to output thermal codes.

Abstract: In a conventional bias circuit, as a power supply voltage increases, a current supplied to a bandgap reference becomes unstable due to a fluctuation of the power supply voltage, which makes it impossible for the bias circuit to perform stable bias operations in some cases. A bias circuit of the present invention has a bandgap reference, and includes a first current path supplying a drive current to the bandgap reference, and a second current path supplying a current to the bandgap reference for a predetermined period of time after power-on.

Abstract: An internal voltage generating method performed in a semiconductor device, the internal voltage generating method including generating a plurality of initialization signals corresponding to a plurality of external power supply voltages; detecting a transition of a lastly-generated initialization signal from among the plurality of initialization signals and generating a detection signal; and generating a first internal voltage according to the detection signal.

Abstract: The present invention relates to a circuit arrangement and method for controlling power supply in an integrated circuit wherein at least one working parameter of at least one electrically isolated circuit region (10) is monitored, and the conductivity of a variable resistor means is locally controlled so as to individually adjust power supply for each of said at least two electrically isolated circuit regions (10) based on the at least one monitored working parameter. Thereby, a fast and simple control functionality with low area overhead can be provided.

Abstract: A semiconductor device includes a semiconductor element including a current mirror circuit, a parasitic resistance formed at the current mirror circuit, and a connection terminal electrically connected to a part of the current mirror circuit via an electric conductor including a bonding wire, the connection terminal being configured to perform input and output relative to an outside of the semiconductor device; wherein a resistance value of the bonding wire is controlled so that a shift of an output electric current of the current mirror circuit based on the parasitic resistance is corrected.

Abstract: A circuit to control the slew rate of charging a capacitance using the capacitance is disclosed. An example circuit includes a regulator circuit to regulate a supply voltage during a normal operation mode of the circuit. A capacitance circuit is coupled to the regulator circuit. The regulator circuit is coupled to charge a capacitance between a first node and a second node of the capacitance circuit with a charge current. A slew rate control circuit is coupled to the regulator circuit and the capacitance circuit. The slew rate control circuit sets a slew rate of a voltage between the first and second nodes during a power up mode of the circuit.

Abstract: A first embodiment of the present invention is a system for generating a voltage comprising a comparator operable to compare an operation voltage to a reference voltage, control logic operable to selectively output as a control signal an incremented signal or a decremented signal based on a comparison of the operation voltage to the reference voltage by the comparator, and a device module operable to increase or decrease the operation voltage based on the control signal.

Abstract: An authentication device or other type of low-power hand-held device comprises a processor, an external button alternately configurable in an unpressed state and a pressed state, and current drain mitigation circuitry coupled to the external button and a corresponding input of the processor. The current drain mitigation circuitry is configured to connect the input of the processor to a first potential when the external button is in the unpressed state and to connect the input of the processor to a second potential different than the first potential when the external button is in the pressed state, thereby limiting current drain arising from the external button being stuck in the pressed state.

Abstract: A semiconductor memory device includes a boosting power supply circuit that boosts a first voltage to a second voltage, which is higher than an external power supply. A first bandgap reference (BGR) circuit operates on the second voltage generated by the boosting power supply circuit. Thereby, the power supply circuit generates a voltage by using a bandgap reference circuit.

Abstract: A semiconductor device, a semiconductor memory tester, and a multi-chip package are provided. The semiconductor device includes a plurality of nonvolatile semiconductor memories; a boosting circuit which generates a boosted voltage for operating the plurality of nonvolatile semiconductor memories; and a boosting circuit controller which controls the operation of the boosting circuit to generate the boosted voltage on the basis of an operation sequence of the plurality of nonvolatile semiconductor memories.

Abstract: In a constant current circuit that supplies a constant current Ic to a circuit connected to a current output terminal, the first transistor M1 is disposed on a current path of the constant current Ic. The second transistor and the first transistor have commonly connected gate terminals which are control terminals. The first current-voltage converting unit converts the current Im2 flowing through the second transistor into a voltage. A constant current source generates a reference current Iref. The second current-voltage converting unit converts the reference current into a voltage. Into the first error amplifier, voltages Vx1, Vx2 are input, so as to adjust the gate voltage of the first and second transistors. A voltage adjusting unit adjusts the voltage at the gate terminal of the third transistor so that the voltage at one end of the second transistor will be approximated to a predetermined reference voltage.

Abstract: A microchip that can calibrate a plurality of circuits on the microchip with a current reference includes: at least a first circuit disposed on the microchip; at least a first local bias generation circuit, for generating a bias current that is input to the first circuit; an external current reference, coupled to the first local bias generation circuit, for updating the bias current; and a calibration logic, coupled to the first local bias generation circuit, for enabling the external current reference to update the bias current according to a valid calibration signal.

Abstract: A system on chip (SoC) has a digital domain. An adaptive voltage/frequency scaling circuit includes a critical path replica circuit with respect to that digital domain. The critical path replica circuit generates a margin signal, and the adaptive voltage scaling circuit responds to the margin signal by decreasing bias voltage (and/or increasing clock frequency) applied to the digital domain of the system on chip so as to recover available margin. A fail-safe timing sensor is included within the digital domain of the system on chip. The timing sensor generates a flag signal when timing criteria within the digital domain are violated. The adaptive voltage scaling circuit responds to the flag signal by increasing the bias voltage (and/or decreasing the clock frequency) applied to the digital domain of the system on chip so as to implement a recovery operation.

Abstract: A combinational circuit is connected to a flip-flop circuit. A clock buffer supplies a clock to the flip-flop circuit. A control circuit controls a delay time of the flip-flop circuit and a delay time of the combinational circuit independently.

Abstract: Device for controlling the current through a PN junction includes a voltage source connected in series to, in order, firstly a controllable current generator having an input connected to the voltage source, an output and a control input, thereafter a measurement resistor connected to the output, and finally a controlled output to which the PN junction is connected. The device further includes a control signal input, a differential amplifier and an integrating device, which includes a balanced integrator. The current through the output of the controllable current generator is proportional to the voltage difference between its input and its control input, and the reference voltage of the integrating device is constituted of the voltage of the voltage source.

Abstract: A system and method for controlling performance and/or power based on monitored performance characteristics. Various aspects of the present invention may comprise an integrated circuit comprising a first circuit module that receives electrical power. A second circuit module may monitor one or more performance characteristics of the first circuit module and/or the integrated circuit. A third circuit module may, for example, determine power control information based at least in part on the monitored performance characteristic(s). The power control information may be communicated to power supply circuitry to control various characteristics of the electrical power. Various aspects of the present invention may also comprise an integrated circuit comprising a first module that monitors at least one performance characteristic of a first electrical device.

Abstract: An integrated circuit die includes a microprocessor and a control circuit to control elements of a voltage regulator to supply power to the microprocessor.

Abstract: An electronic circuit may comprise an input stage powered by a supply voltage and configured to receive a reference signal. The circuit may further comprise an output stage powered by the supply voltage and coupled to the input stage, and configured to generate an error signal based on: the reference signal, and a feedback signal based on an output signal. The circuit may also include a pass transistor powered by the supply voltage and configured to generate the output signal based on the error signal. A capacitor coupled between the supply voltage and the output stage may increase the current flowing in the output stage, resulting in the output stage conducting current even during a rising edge of the supply voltage, preventing the output signal from reaching the level of the supply voltage during the rising edge of the supply voltage.

Abstract: The output terminal of a first voltage-current conversion circuit, which includes operational amplifiers and a resistor, is connected to the output terminal of a second voltage-current conversion circuit which includes operational amplifiers and a resistor, and also to the negative input terminal of the second voltage-current conversion circuit via a source follower as an impedance conversion circuit which is formed by an NMOS transistor and constant current source. Furthermore, the output terminal of the first voltage-current conversion circuit serves as the output terminal of a differential amplifier circuit. The positive-phase input terminal of the second voltage-current conversion circuit is connected to a reference voltage. Since the node of the current outputs of the first and second voltage-current conversion circuits has a high impedance, these circuits operate to equalize their output currents.

Abstract: A light-emitting device driving circuit capable of reliably performing emission control on a light-emitting device of a low emission threshold (about 10 mA or less) and capable of correcting a distortion due to the Early effect of a transistor in the drive current supplied to the light emitting device. The light limiting device driving circuit includes a current control unit (101) which controls the value of a main current based on a control voltage, a bias current source (CC1) for subtracting a bias current from the main current, and a switching unit (103) which controls emission of light from the light-emitting device by switching, based on the drive signal, a current obtained by subtracting the bias current from the main current or a current based on the current obtained by the subtraction.

Abstract: A boosted voltage generator for increasing boosting efficiency according to the amount of load and display apparatus including the same are provided. The boosted voltage generator includes an input voltage generator configured to generate a first input voltage or a second input voltage based on a reference voltage, compare the reference voltage with a feedback boosted voltage fed back based on the amount of load at an output terminal, and output a comparison result; and a booster configured to boost the first or second input voltage using at least one external capacitor based on the comparison result and output a boosting result as a boosted voltage to the output terminal. The boosted voltage generator and the display apparatus including the same can increase the boosting efficiency according to the amount of load.

Abstract: A bias circuit and a voltage-controlled oscillator (VCO) thereof suitable for improving the stability of the bias circuit are provided. The bias circuit includes: an error amplifier circuit, having an inverting input terminal connected to a reference voltage; a voltage-controlled current source, having a voltage control terminal connected to a voltage output terminal of the error amplifier circuit, in which a current generated by the current source is controlled by a voltage at the voltage output terminal of the error amplifier circuit; a delay control circuit, having a current input terminal connected to the voltage-controlled current source, an output terminal connected to a non-inverting input terminal of the error amplifier circuit, and a voltage input terminal connected to a supply terminal of the control voltage, and the delay control circuit is adapted to adjust an output voltage of the delay control circuit according to a control voltage.

Abstract: An internal voltage generator circuit is disclosed. The internal voltage generator circuit includes a comparator configured to compare a first voltage with a reference voltage and to output a comparison signal. The circuit further includes an internal voltage driver configured to receive an external voltage and the comparison signal and to output an internal voltage at an internal voltage output terminal, based on the comparison signal. The circuit further includes a voltage divider circuit including first and second resistor units and a first voltage output terminal between the first and second resistor units, configured to receive the internal voltage, and configured to output the first voltage based on the resistance values of the first and second resistor units, the first and second resistor units connected in series, and the first voltage being output through the first voltage output terminal.

Abstract: Power control circuitry is provided for controlling connection of a power source having a source voltage level to a switched power rail to provide power to an associated circuit block. The power control circuitry comprises a switch block for selectively connecting the switched power rail to the power source, and a switch controller for controlling operation of the switch block. A ring oscillator circuit is powered from the switched power rail and produces an oscillating output signal, and analysis circuitry is then used to analyse change in frequency of the oscillating output signal produced by the ring oscillator circuit during a period of time when the switched power rail is not at the source voltage level. The switch controller is then arranged to control at least one aspect of the operation of the switch block in dependence on the analysis. This technique provides a simple and effective digital technique for observing voltage changes on the switched power rail.

Abstract: A data clock control apparatus includes a bias voltage generator configured to receive a plurality of test mode signals and a plurality of fuse signals and to generate a bias voltage to secure a predetermined potential difference from an external driving power supply, and a clock signal controller configured to receive the bias voltage and to buffer an external clock signal and outputs a data output clock signal.

Abstract: A circuit for generating negative voltage includes a variable period oscillator configured to generate an oscillator signal enabled in response to a detection signal and to determine a period of the oscillator signal in response to a control signal, a pump configured to perform pumping operations in response to the oscillator signal and to generate a negative voltage by the pumping operations, a negative voltage detecting unit configured to detect the level of the negative voltage to generate the detection signal, and a gate-induced drain leakage current detecting unit configured to measure the amount of a gate-induced drain leakage current to generate the control signal.

Abstract: A temperature independent reference circuit includes first and second bipolar transistors with commonly coupled bases. First and second resistors are coupled in series between the emitter of the second bipolar transistor and ground. The first and second resistors have first and second resistance values, R1 and R2, and third and second temperature coefficients, TC3 and TC2, respectively. The resistance values being such that a temperature coefficient of a difference between the base-emitter voltages of the first and second bipolar transistors, TC1, is substantially equal to TC2×(R2/(R1+R2))+TC3×(R1/(R1+R2)), resulting in a reference current flowing through each of the first and second bipolar transistors that is substantially constant over temperature. A third resistor coupled between a node and the collector of the second bipolar transistor has a value such that a reference voltage generated at the node is substantially constant over temperature.

Abstract: A switch controlling circuit, which comprises: a frequency programmable clock signal generator and a plurality of registers. The frequency programmable clock signal generator serves to generate a frequency controllable clock signal. The registers comprises: a first stage register, for receiving an input signal and the frequency controllable clock signal, and for outputting a first output signal, which is utilized to control a first switch device, according to the input signal and the frequency controllable clock signal; and a second stage register, for receiving the first output signal and the frequency controllable clock signal, and for outputting a second output signal, which is utilized to control a second switch device, according to the first output signal and the frequency controllable clock signal.

Abstract: Some embodiments include apparatus and methods having a clock path with a combination of current-mode logic (CML) based and complementary metal-oxide semiconductor (CMOS) components.

Abstract: An integrated circuit with a configurable portion, such as an input/output port, that can be placed in a default configuration prior to actual configuration of the integrated circuit. An external terminal that serves as an output during normal operation is coupled, after power-on of the integrated circuit, to a comparator that senses the voltage level at that external terminal. If the external terminal is at a particular level, a multiplexer is controlled to ignore the state of the normal configuration memory, and to place the configurable input/output port into a default protocol.

Abstract: A temperature compensation circuit according to an embodiment includes a bias circuit configured to output a bias current, the bias current having a current value increasing in proportion to absolute temperature, in a low temperature region in which a temperature is lower than a predetermined temperature, and having another current value increasing at a faster rate than the current value increasing in proportion to absolute temperature, in a high temperature region in which the temperature is equal to or greater than the predetermined temperature, and a transistor having a collector connected to a power supply terminal, an emitter which is grounded, and a base supplied with the bias current.

Abstract: There is provided a reference voltage generating circuit including: a first PN junction element (PN1) whose forward voltage is a first voltage V1; a second PN junction element (PN2) having a current density different from the first PN junction element and whose forward voltage is a second voltage V2 higher than the first voltage V1; and generating circuits (101 to 103) inputting the first voltage V1 and the second voltage V2 and generating a reference voltage expressed by A2×V2+A3×(A2×V2?A1×V1) in which A1, A2, and A3 are set to be coefficients, and in which A1 and A2 are different values.

Abstract: Apparatuses, systems, and methods are disclosed for generating, regulating, and modifying various voltage levels on a semiconductor device using a current mirroring digital-to-analog voltage regulator. The voltage regulator operates by mirroring a reference current onto a selectable current level and controlling the selectable current level with a digital input to a plurality of switched CMOS devices connected in parallel. The switched CMOS devices generate the selectable current level responsive to the digital input and proportional to the reference current. The selectable current level is combined with an output of a voltage divider to generate a monitor signal. The monitor signal is compared to a reference voltage and the results of the comparison controls a charge pump to generate a pumped voltage. The pumped voltage is fed back to the voltage divider, which includes a feedback resistor and a reference resistor connected in series between the pumped voltage and ground.

Abstract: A semiconductor device 2 has a plurality of elements. It also has an F-V table storing unit for low voltage threshold cells 31 for storing an F-V table TB11 of an oscillation frequency f1 relying on the plurality of elements and a power supply voltage EV to be supplied to the plurality of elements. It has a process sensor block 12 having at least one of the plurality of elements, for monitoring the oscillation frequency f1 relying on at least one element. It further has a selector 33 for setting the power supply voltage EV associated with the oscillation frequency f1, as the supply voltage to be supplied to the semiconductor device 2 by selecting according to the F-V table TB11. The F-V table TB11 is obtained by mutually relating the combinations of random number models ?n between an F-? table TB20 and an ?-V table TB30.

Abstract: An electric circuit device operable under a power supply includes: a circuit; a first switch connected between the power supply and the circuit; a capacitor tending to produce a first leakage current; a second switch connected between the power supply and the capacitor, the second switch producing a second leakage current when it is cut off, the second leakage current being less than the first leakage current; and a switch controller for turning on the second switch while both the first switch and the second switch are turned off, and after a first time passes for turning on the first switch.

Abstract: An integrated circuit, comprises a wakeup terminal; a supply voltage terminal configured to receive a supply voltage; and a power control circuit. The power circuit comprises an enable circuit coupled to the wakeup terminal and configured to generate a voltage monitoring enable signal as a response to a wakeup signal received at the wakeup terminal, and a voltage monitoring circuit for generating a supply voltage level indication signal. The voltage monitoring circuit is coupled to the supply voltage terminal and comprises an operation switch controlled by the voltage monitoring enable signal. The voltage monitoring circuit is configured to determine if the supply voltage is above a threshold voltage and set the supply voltage level indication signal accordingly. The integrated circuit further comprises processing circuitry, with the supply voltage level indication signal controlling the switching between a normal operation state and a standby state of the processing circuitry.

Abstract: An internal power-supply circuit generates an internal voltage based on a reference voltage, and has an external-power-supply terminal to which an external power-supply voltage having a first potential is applied during a normal operation and an external power-supply voltage having a second potential that is higher than the first potential is applied during a burn-in acceleration test, a reference-voltage generating unit for generating the reference voltage from the external power-supply voltage, and an internal-voltage generating unit for generating the internal voltage based on the reference voltage.

Abstract: High-accuracy overcurrent detection is performed, while a loss resulting from the current detection is significantly reduced. A switch section outputs the voltage between the both terminals of a current detection resistor using an AND signal between an output signal from a hysteresis comparator and an output signal from a pre-driver. The voltage is filtered by an electrostatic capacitor element and a resistor, and inputted to a comparator. The comparator makes a comparison between the signals inputted to the two input terminals thereof, and outputs the result of the comparison to a digital filter. When an overcurrent begins to flow in a power supply unit, the levels of the voltages inputted to the two input terminals of the comparator are inverted so that the comparator outputs an inversion signal to the digital filter. The digital filter outputs a detection signal to an overcurrent detection circuit when an arbitrary time has elapsed.

Abstract: Certain embodiments provide an electronic circuit and a correction circuit. The electronic circuit includes a plurality of semiconductor elements. The correction circuit controls voltage of the semiconductor elements such that a difference between electric characteristics of the semiconductor elements autonomously decreases.

Abstract: A method is described for performing an automatic internal trimming operation that can compensate process variation and supply voltage variation in an integrated circuit. A reference signal is applied when the integrated circuit is in an automatic internal trimming mode, and integrated circuit timing is trimmed into a predetermined target range after applying predefined reference cycles.

Abstract: This invention provides a method for reducing the effects of process, supply voltage and temperature variations in integrated circuits and its circuit implementation. The disclosed method builds up a detecting-feedback loop with a plurality of target MOS transistors in main circuits, an induction MOS transistor and a current-to-voltage conversion circuit, and performs a body modulation to effectively reduce the parameter fluctuations of the target MOS transistors in a sub-threshold region or a saturated region due to process, supply voltage and temperature variations. A body-modulated circuit achieves the disclosed method with only a few circuit elements, which effectively improves the stability, reliability and product yield of integrated circuits, especially sub-threshold integrated circuits, without significantly increasing the circuit complexity and power consumption.