Abstract: A microelectromechanical structure (MEMS) device includes a secondary MEMS element displaceably coupled to a substrate. A primary MEMS element is displaceably coupled to the secondary MEMS element and has a resonant frequency substantially equal to the secondary MEMS element and has a much larger displacement than the secondary MEMS element.

Abstract: A method of forming a microelectromechanical systems (MEMS) device includes forming an electrode on a substrate. The method includes forming a structural layer on the substrate. The structural layer is disposed about a perimeter of the electrode and has a residual film stress gradient. The method includes releasing the structural layer to form a resonator coupled to the substrate. The residual film stress gradient deflects a first portion of the resonator out of a plane defined by a surface of the electrode.

Abstract: Tunable MEMS resonators having adjustable resonance frequency and capable of handling large signals are described. In one exemplary design, a tunable MEMS resonator includes (i) a first part having a cavity and a post and (ii) a second part mated to the first part and including a movable layer located under the post. Each part may be covered with a metal layer on the surface facing the other part. The movable plate may be mechanically moved by a DC voltage to vary the resonance frequency of the MEMS resonator. The cavity may have a rectangular or circular shape and may be empty or filled with a dielectric material. The post may be positioned in the middle of the cavity. The movable plate may be attached to the second part (i) via an anchor and operated as a cantilever or (ii) via two anchors and operated as a bridge.

Abstract: A resonant filter including a matrix of n×m resonators of N/MEMS type, each resonator including an actuating mechanism and a detection mechanism. An input of the filter, configured to receive an electrical input signal, is electrically connected to the resonator actuating mechanism. The outputs of the resonator detecting mechanism are electrically connected together and to an output of the filter, such that the signal to be obtained as an output of the filter is an image of the sum of the mechanical responses of the resonators. The resonators are not mechanically coupled together.

Abstract: A MEMS resonator according to the invention includes: a substrate; a first electrode formed above the substrate; and a second electrode having a supporting portion which is formed above the substrate and a beam portion which is supported by the supporting portion and arranged above the first electrode, wherein the beam portion has, in plan view, a shape in which the width monotonically decreases in a direction from the supporting portion toward a tip of the beam portion in a region overlapping the first electrode.

Abstract: Embodiments are related to micro-electromechanical system (MEMS) devices, systems and methods. In one embodiment, a MEMS resonating device comprises a resonator element configured to provide timing; and at least one passive temperature compensation structure arranged on the resonator element.

Abstract: Microelectromechanical resonators include a resonator body with a built-in piezoelectric-based varactor diode. This built-in varactor diode supports passive frequency tuning by enabling low-power manipulation of the stiffness of a piezoelectric layer, in response to controlling charge build-up therein at resonance. A resonator may include a composite stack of a bottom electrode, a piezoelectric layer on the bottom electrode and at least one top electrode on the piezoelectric layer. The piezoelectric layer includes a built-in varactor diode, which is defined by at least two regions having different concentrations of electrically active dopants therein.

Abstract: The invention relates to a micromechanical device comprising a semiconductor element capable of deflecting or resonating and comprising at least two regions having different material properties and drive or sense means functionally coupled to said semiconductor element. According to the invention, at least one of said regions comprises one or more n-type doping agents, and the relative volumes, doping concentrations, doping agents and/or crystal orientations of the regions being configured so that the temperature sensitivities of the generalized stiffness are opposite in sign at least at one temperature for the regions, and the overall temperature drift of the generalized stiffness of the semiconductor element is 50 ppm or less on a temperature range of 100° C. The device can be a resonator. Also a method of designing the device is disclosed.

Abstract: It is an object to provide a test method of a process, an electric characteristic, and a mechanical characteristic of a structure body in a micromachine without contact. A structure body including a first conductive layer, a second conductive layer provided in parallel to the first conductive layer, and a sacrifice layer or a space provided between the first conductive layer and the second conductive layer is provided; an antenna connected to the structure body is provided; electric power is supplied to the structure body wirelessly through the antenna; and an electromagnetic wave generated from the antenna is detected as a characteristic of the structure body.

Abstract: To provide a vibration actuator, a lens barrel, a camera, a manufacturing method for a vibration body and a manufacturing method for a vibration actuator, which have a high driving efficiency and can lead to easy manufacture. A vibration actuator of the present invention is provided with an elastic body and an electromechanical transducer element sintered onto the elastic body in the state that the element is divided into a plurality of areas by a groove-shaped border portion.

Abstract: In an acoustic wave device, a high-order transverse mode wave which is an unnecessary wave is suppressed. The acoustic wave device includes: a piezoelectric substrate; at least one pair of IDT electrodes formed on the piezoelectric substrate; and a dielectric film which covers at least a part of the piezoelectric substrate and the IDT electrodes, and the IDT electrodes each has a plurality of electrode fingers. The dielectric film covers at least an area in which the electrode fingers are arranged interleaved with each other. An acoustic velocity of an acoustic wave in an intersection area, within the region, which is a portion from ends of the electrode fingers to a predetermined length or more inward from the ends, is greater than an acoustic velocity of an acoustic wave in an edge area including end portions of the electrode fingers.

Abstract: A MEMS resonator including: an input port which is applied with an input voltage; an output port which outputs an output current; and N MEMS resonating units (N being an integer greater than or equal to 2), the MEMS resonating unit each including a vibrator and being connected to the input port and output port, in which the N MEMS resonating units are serially connected to the input port.

Abstract: Provided is a substrate with a built-in electronic component that can minimize occurrence of functional anomaly, damage, or the like in a filter function section of an elastic wave filter that is caused by a deformation of a hollow cover of the elastic wave filter that is built into the substrate. The substrate with a built-in electronic component includes: an SAW filter built into a substrate, a filter function section of the SAW filter being covered by a hollow cover; and a stress absorbing layer that faces the hollow cover of the SAW filter through an insulating layer in the substrate.

Abstract: A method for forming a resonator including a resonant element, the resonant element being at least partly formed of a body at least partly formed of a first conductive material, the body including open cavities, this method including the steps of measuring the resonator frequency; and at least partially filling said cavities.

Abstract: A nano scale resonator, a nano scale sensor, and a fabrication method thereof are provided. The nano scale resonator includes a resonance unit of nano scale configured to resonate based on an applied signal, and an anchor on a substrate, the anchor being configured to support the resonance unit, the anchor having an air gap within boundaries of the anchor, the resonance unit, and the substrate, the air gap being configured to reflect a vertical wave occurring in the resonance unit.

Abstract: A graphene sheet is provided. The graphene sheet includes a carbon lattice and a spatial distribution of defects in the carbon lattice. The spatial distribution of defects is configured to tailor the buckling properties of the graphene sheet.

Abstract: A MEMS mixer filter including an array of a multiplicity of resonator elements with conductive outer surfaces in a coplanar rectangularly tiled array, and two sets of DC bias lines in which alternating resonator elements in each row and column are connected to one or the other sets of bias lines so that laterally adjacent resonators may be biased to a DC potential. The resonator elements are uniform in size and shape. Lateral dimensions of the resonator elements are between 5 and 50 microns. The resonator elements are between 100 nanometers and 100 microns thick, and adjacent resonator elements are separated by a gap between 100 and 500 nanometers. A process of forming the MEMS mixer filter.

Abstract: A component is designed to work with acoustic waves. Embodiments have an improved temperature gradient of the frequency range and have increased performance strength. To this end, the component includes a stack of layers having a lower bonding layer, an electrode layer, an upper bonding layer, a compensation layer, and a trimming layer.

Abstract: The invention relates to a thermocompensated mechanical resonator including a strip whose core, which is of polygonal section, includes single crystal silicon. According to the invention, one or a number of faces of the core has a coating for making the resonator less sensitive to temperature variations. The invention concerns the field of timepieces.

Abstract: A microelectromechanical (MEM) filter is disclosed which has a plurality of lattice networks formed on a substrate and electrically connected together in parallel. Each lattice network has a series resonant frequency and a shunt resonant frequency provided by one or more contour-mode resonators in the lattice network. Different types of contour-mode resonators including single input, single output resonators, differential resonators, balun resonators, and ring resonators can be used in MEM filter. The MEM filter can have a center frequency in the range of 10 MHz-10 GHz, with a filter bandwidth of up to about 1% when all of the lattice networks have the same series resonant frequency and the same shunt resonant frequency. The filter bandwidth can be increased up to about 5% by using unique series and shunt resonant frequencies for the lattice networks.

Abstract: Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed on a piezoelectric substrate. The method further includes forming a fixed electrode with a plurality of fingers on the piezoelectric substrate. The method further includes forming a moveable electrode with a plurality of fingers over the piezoelectric substrate. The method further includes forming actuators aligned with one or more of the plurality of fingers of the moveable electrode.

Abstract: A method of operating a micro-electromechanical system, comprising a resonator; an actuation electrode; and a first detection electrode, to filter and mix a plurality of signals. The method comprises applying a first alternating voltage signal to the actuation electrode, wherein an actuation force is generated having a frequency bandwidth that is greater than and includes a resonant bandwidth of a mechanical frequency response of the resonator, and wherein a displacement of the resonator is produced which is filtered by the mechanical frequency response and varies a value of an electrical characteristic of the first detection electrode. The method also comprises applying a second alternating voltage signal to the first detection electrode, wherein the second voltage signal is mixed with the varying value to produce a first alternating current signal. The first alternating current signal is detected at the first detection electrode.

Abstract: There is provided a magnonic-crystal spin wave device capable of controlling a frequency of a spin wave. The magnonic-crystal spin wave device according to the invention includes a spin wave waveguide made of magnetic material, and the spin wave waveguide guides the spin wave so as to propagate in one direction, and includes a magnonic crystal part which has a cross-section orthogonal to the direction, and at least one of a shape, area size, and center line of the cross-section periodically changes in the direction. In accordance with the invention, it is possible to easily control the frequency of the spin wave using the spin wave waveguide made of single magnetic material.

Abstract: A bank of nano electromechanical integrated circuit filters. The bank of integrated circuit filters comprising a silicon substrate; a sacrificial layer; a device layer including at least two resonators, wherein the at least two resonators include sub-micro excitable elements and wherein the at least two resonators posses a fundamental mode frequency as well as a collective mode frequency and wherein the collective mode frequency of the at least two resonators is determined by the fundamental frequency of the sub-micron elements. At least one switch connects to the bank of integrated circuit filters.

Abstract: Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed on a piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam formed above the piezoelectric substrate and at a location in which, upon actuation, the MEMS beam shorts the piezoelectric filter structure by contacting at least one of the plurality of electrodes.

Abstract: Embodiments are related to micro-electromechanical system (MEMS) devices, systems and methods. In one embodiment, a MEMS resonating device comprises a resonator element configured to provide timing; and at least one passive temperature compensation structure arranged on the resonator element.

Abstract: A nano electromechanical integrated circuit filter and method of making. The filter comprises a silicon substrate; a sacrificial layer; a device layer including at least one resonator, wherein the resonator includes sub-micron excitable elements and wherein the at least one resonator possess a fundamental mode frequency as well as a collective mode frequency and wherein the collective mode frequency of the at least one resonator is determined by the fundamental frequency of the sub-micron elements.

Abstract: A microelectromechanical filter is provided. The microelectromechanical filter includes an input electrode, an output electrode, one or several piezoelectric resonators, one or several high quality factor resonators, and one or several coupling beams. The input electrode and the output electrode are disposed on the piezoelectric resonators. The high quality factor resonator is silicon or of piezoelectric materials, and there is no metal electrode on top of the resonator. The coupling beam is connected between the piezoelectric resonator and the high quality factor resonator. The coupling beam transmits an acoustic wave among the resonators, and controls a bandwidth of filter. The microelectromechanical filter with low impedance and high quality factor fits the demand for next-generation communication systems.

Abstract: An elastic wave device has a structure that prevents flux from flowing into a hollow space of the device during mounting of the device using solder bumps.

Abstract: A dual in-situ mixing approach for extended tuning range of resonators. In one embodiment, a dual in-situ mixing device tunes an input radio-frequency (RF) signal using a first mixer, a resonator body, and a second mixer. In one embodiment, the first mixer is coupled to receive the input RF signal and a local oscillator signal. The resonator body receives the output of the first mixer, and the second mixer is coupled to receive the output of the resonator body and the local oscillator signal to provide a tuned output RF signal as a function of the frequency of local oscillator signal.

Abstract: An acoustic wave filter device includes plural filter circuits between an input terminal and an output terminal. Plural inductors are connected in series in a series arm that connects the input terminal and the output terminal, and plural first acoustic wave resonators are connected between the series arm and a ground potential. Each of the filter circuits includes at least one of the inductors and one of the first acoustic wave resonators. A second acoustic wave resonator in the series arm connects adjacent filter circuits. The acoustic wave filter device has a pass band lower than a trap band, steep attenuation characteristics in a range from the pass band to the trap band, and is capable of providing a large amount of attenuation in the trap band.

Abstract: This disclosure provides implementations of electromechanical systems combined resonator and passive circuit components. In one aspect, passband flattened filter apparatus includes a resonator structure and input and output passband flattening components. The resonator structure has a first input, a second input coupled to a ground terminal, a first output, and a second output coupled to the ground terminal. The input passband flattening component includes a first inductor having an output coupled to the first input of the resonator structure, and a second inductor having an input coupled to the first input of the resonator structure and an output coupled to the ground terminal. The output passband flattening component includes a first inductor having an input coupled to the first output of the resonator structure, and a second inductor having an input coupled to the first output of the resonator structure and an output coupled to the ground terminal.

Abstract: Provided are methods and apparatus to improve upon conventional piezoelectric resonators. Also provided are apparatus and methods to improve upon filters having piezoelectric resonators. In an example, a piezoelectric resonator includes a substrate, and a piezoelectric material disposed on the substrate. A first electrode and a second electrode are disposed on the piezoelectric material. The piezoelectric resonator has a passband, and a portion of the perimeter of the piezoelectric material is anchored to the substrate to suppress an in-band spurious mode of the piezoelectric material. The portion, if unanchored, would exhibit maximum, near-maximum, and/or excessive displacement deflection at resonance. The piezoelectric resonator can be integrated in a semiconductor die. Multiple filters having piezoelectric resonators with respective different passbands can be disposed on the substrate.

Abstract: A filter device is provided including a substrate (302) and a plurality of horizontal gap closing actuator (GCA) devices (550) disposed on a first surface of the substrate. The plurality of GCA devices includes and one or more GCA varactors (700). Each one of the plurality of horizontal GCA devices includes at least one drive comb structure (602a, 602b, 702a, 702b), at least one input/output (I/O) comb structure (616a, 676b, 716a, 716b), and at least one truss comb structure (604, 704) interdigitating the drive comb and the I/O comb structures. The truss comb structure is configured to move along a motion axis between at least a first interdigitated position and a second interdigitated position based on a bias voltage applied between the truss comb structure and the drive comb structure.

Abstract: Carbon nanofiber resonator devices, methods for use, and applications of said devices are disclosed. Carbon nanofiber resonator devices can be utilized in or as high Q resonators. Resonant frequency of these devices is a function of configuration of various conducting components within these devices. Such devices can find use, for example, in filtering and chemical detection.

Abstract: Embodiments of apparatuses, systems and methods relating to temperature compensation of acoustic resonators in the electrical domain are disclosed. Other embodiments may be described and claimed.

Abstract: The present invention is directed towards a self-polarized capacitive micromechanical resonator apparatus and fabrication method. The apparatus includes a body member capable of retaining a polarization charge in the absence of a polarization voltage source. By creating potential wells or charge traps on the surface of the resonant body member through a nitrogen diffusing process, charges may be trapped in the charge traps. Unless perturbed externally, the charges remain trapped thus enabling a self-polarization technique without the need for any externally applied polarization voltage.

Abstract: Methods and apparatus for temperature control of devices and mechanical resonating structures are described. A mechanical resonating structure may include a heating element and a temperature sensor. The temperature sensor may sense the temperature of the mechanical resonating structure, and the heating element may be adjusted to provide a desired level of heating. Optionally, additional heating elements and/or temperature sensors may be included.

Abstract: Disclosed herein is an electromagnetic wave circuit disruptor apparatus including: a biasable non-reciprocal device having terminals for receiving and transmitting the electromagnetic signals, a controllable biaser, a signal detector, and a controller connected to the signal detector and the controllable biaser to selectively reverse the bias of the controllable biaser. The energy level at the receiver terminal of the non-reciprocal device is monitored to detect a condition such as an inappropriate amount of power at a circuit, such as at a receiver circuit. When a failure mode is detected the bias of the controllable biaser is reversed, thus reversing the direction of the non-reciprocal device. Instead of flowing into the circuit, energy flows into a properly matched load on a provided terminal of the non-reciprocal device and is dissipated.

Abstract: A resonator according to the embodiment includes: a substrate; a flat layered body which is formed above the substrate and is formed with at least a lower electrode, a piezoelectric film and an upper electrode; an anchor portion which fixes the layered body above the substrate; a cut-out portion inside the layered body; a tuning fork vibrator which is formed in the cut-out portion, has both ends supported by the layered body and is formed with at least a lower electrode, a piezoelectric film and an upper electrode; and an envelope which envelopes the layered body and the tuning fork vibrator in a noncontact fashion, and prevents an external force from being applied to the layered body and the tuning fork vibrator.

Abstract: A digitally-tunable RF MEMS filter includes a substrate and a plurality of mechanically coupled resonators, wherein a first and a last resonator of the plurality of mechanically coupled resonators are configured to be electrostatically transduced. One or more of the plurality of mechanically coupled resonators are configured to be biased relative to the substrate such that the one or more biased resonators may be brought substantially in contact with the substrate. In a method of digitally tuning an RF MEMS filter having a mechanically coupled resonator array, a DC bias voltage is applied to at least a first resonator and a last resonator of the mechanically coupled resonator array such that motional boundary conditions for the at least first resonator and last resonator are selectable in proportion to the DC bias voltage.

Abstract: A resonator includes a resonating body and at least one periodic structure having one end connected to the resonating body. The periodic structure includes at least two basic structure units with duplicated configuration. The periodic structure blocks wave propagation caused by the vibration of the resonating body. The resonating body has a resonance frequency f0. The periodic structure has a band gap characteristic or a deaf band characteristic within a particular frequency range, and the resonance frequency f0 falls within the particular frequency range of the periodic structure.

Abstract: A resonator and a method of manufacturing a resonator are provided. The resonator includes a sacrificial layer formed on a substrate, and a resonant structure formed on the sacrificial layer, the resonant structure comprising a carbon nano-substance layer and a silicon carbide layer.

Abstract: The resonator comprises an oscillating element and first and second excitation electrodes of the oscillating element. An AC signal generator is connected to the first and second excitation electrodes and delivers first and second signals of the same amplitudes and in antiphase on the first and second electrodes. A first DC voltage source is connected to a third electrode. A second DC voltage source is connected to a fourth electrode. An additional electrode is electrically connected to the oscillating element. A signal representative of oscillation of the oscillating element is provided by the additional electrode formed by an anchoring point of the oscillating element and biased by a third DC voltage.

Abstract: A microelectromechanical (MEM) resonator includes a resonant cavity disposed in a first layer of a first solid material disposed on a substrate and a first plurality of reflectors disposed in the first layer in a first direction with respect to the resonant cavity and to each other. Each of the first plurality of reflectors comprises an outer layer of a second solid material and an inner layer of a third solid material. The inner layer of each of the first plurality of reflectors is adjacent in the first direction to the outer layer of each reflector and to either the outer layer of an adjacent reflector or the resonant cavity.

Abstract: Microelectromechanical resonators include a resonator body anchored to a surrounding substrate by at least one support that holds the resonator body opposite a recess in the substrate. The resonator body has first and second pluralities of interdigitated drive and sense electrodes thereon. The first plurality of interdigitated drive and second electrodes are aligned to a first axis of acoustic wave propagation in the resonator body when the resonator body is operating at resonance. In contrast, the second plurality of interdigitated drive and sense electrodes are aligned to a second axis of acoustic wave propagation in the resonator body. This second axis of acoustic wave propagation preferably extends at an angle in a range from 60° to 120° relative to the first axis and, more preferably, at an angle of 90° relative to the first axis.

Abstract: Tunable MEMS resonators having adjustable resonance frequency and capable of handling large signals are described. In one exemplary design, a tunable MEMS resonator includes (i) a first part having a cavity and a post and (ii) a second part mated to the first part and including a movable plate located under the post. Each part may be covered with a metal layer on the surface facing the other part. The movable plate may be mechanically moved by a DC voltage to vary the resonance frequency of the MEMS resonator. The cavity may have a rectangular or circular shape and may be empty or filled with a dielectric material. The post may be positioned in the middle of the cavity. The movable plate may be attached to the second part (i) via an anchor and operated as a cantilever or (ii) via two anchors and operated as a bridge.

Abstract: The invention relates to design of micromechanical resonators and, more precisely, to the design of microelectromechanical systems (MEMS) resonators. The invention provides an improved design structure for a microelectromechanical systems (MEMS) resonator including a movable mass structure and a spring structure. The spring structure includes a spring element. The spring element is anchored from one end and connected to a plurality of electrode fingers on another end. The plurality of electrode fingers are operatively connected together at the other end of the spring element. The improved structure is frequency robust to manufacturing variations and enables reliable frequency referencing with good performance, particularly in small size solutions.

Abstract: A filter includes a plurality of primary resonators connected to a serial arm, a plurality of secondary resonators connected to a parallel arm, a primary inductor connected to at least one of the plurality of primary resonators and a secondary inductor connected to at least one of the plurality of secondary resonators. The primary inductor is arranged so as not to be connected to a path between the secondary resonator to which the secondary inductor is connected in parallel and the primary resonator that is connected to the secondary resonator to which the secondary inductor is connected in parallel.

Abstract: The filter includes: a primary transducer connected to a primary terminal; a secondary transducer connected to a plurality of secondary terminals; and a coupling transducer for mechanically coupling the primary transducer and the secondary transducer.