Abstract: The invention concerns a method for adjusting the operating gap of two mechanical elements of a substantially planar mechanical structure obtained by micro-etching. The method consists in attributing (A) to one of the elements (E) a fixed reference position (RF) in the direction of the residual gap separating said elements; connecting (C) the other element (OE) to the fixed reference position (RF) by an elastic link (S) and installing (D) between the fixed reference position (RF) and the other element (OE) at least a stop block defining an abutting gap, maximum displacement amplitude of the other element; subjecting (DE) the other element (OE) to a displacement antagonistic to the elastic link (S) up to the abutting position constituting the operating position, the residual gap being reduced to the difference between residual gap and abutting gap and less than the resolution of the micro-etching process. The invention is applicable to electromechanical resonators.

Abstract: A nanotube apparatus is described. The apparatus includes a first electrode having a first edge. An array of nanotubes distributed in a closed path are also included. The closed path surrounds the first electrode and adjacent to the first edge. The closed path is also locally straight. Each of the nanotubes has an end that is free to oscillate. The apparatus also includes a second electrode having a second edge surrounding both the first electrode and the array of nanotubes. Methods are also described.

Abstract: A piezoelectric device includes a piezoelectric substrate having a connection pad, a package having an electrode pad, and a connection member to connect the electrode pad to the connection pad, the connection member being a metal member having a plurality of spherical metal particles connected to each other by sintering.

Abstract: A device comprising a nanotube configured as a resonator, a source electrode, a gate electrode, a drain electrode and at least one impeding element, wherein the at least one impeding element is configured to minimize energy loss due to a contact resistance between at least the source electrode and the nanotube.

Abstract: The resonator comprises two capacitively coupled electrodes. One of the electrodes is made of a p-type doped semiconductor material, whereas the other electrode is made of an n-type doped semiconductor material. The invention also comprises a method of using this specific selection of the doping for enhancing the output signal current from a resonator.

Abstract: A surface acoustic wave filter element has a piezoelectric substrate; and a plurality of inter-digital transducer (IDT) electrodes formed on the piezoelectric substrate, wherein at least one of the plurality of IDT electrodes is connected to a balanced type terminal and other IDT electrodes are connected to balanced type terminals or unbalanced type terminals, and first wiring electrode means which is connected or to be connected to the at least one IDT electrode and second wiring electrode means which is connected or to be connected to the other IDT electrodes are disposed on planes different from each other.

Abstract: A resonant MEMS device that detects photons, particles and small forces including atomic forces is disclosed. The device comprises a planar substrate 1, two electrodes 2 and 3 on top of the substrate, a resonant micro-electromechanical (MEMS) structure 6, such as a cantilever, anchored to first electrode 2 and arranged above the second electrode 3 separated from this electrode with an ultrathin transition layer 5. The resonant MEMS structure is working at its natural resonant frequency. The resonant oscillation of the cantilever can be initiated by applying AC voltage with frequency equaling the resonant frequency of the MEMS structure. A constant voltage is applied between the cantilever and the second electrode. The cantilever oscillates at very small amplitude ranging from few ?ngstrom (?) to several nm. During operation, a constant component of the electrical current is measured between the cantilever and the second electrode 3.

Abstract: The present invention provides a micro-resonator in which it is possible to lower synthesized impedance and it is possible to apply it to devices to be desired. Also, the present invention provides a communication apparatus provided with a filter composed of such a micro-resonator. A micro-resonator according to the present invention is constituted by connecting a plurality of micro-resonator devices including a beam structure in parallel electrically. A communication apparatus of the present invention uses a filter composed of the above-described micro-resonator as its filter.

Abstract: Disclosed are micromechanical tapered I-shaped bulk acoustic resonators. An exemplary resonator is formed on a substrate, which is preferably silicon. The resonator has a central rod (or extensional member) coupled to two tapered lateral flanges (or flexural members). The central extensional member and tapered flexural members are separated from the substrate. One or more electrodes are disposed adjacent to the tapered flexural members, are separated therefrom by small gaps, and are separated from the substrate. One or more anchors are coupled to the substrate, are laterally separated from the central rod by small gaps, and are coupled to the central rod by supports. The one or more anchors support and suspend the central rod and flexural members from the substrate. Process compensation is achieved using the tapered flexural members.

Abstract: The electromechanical transducer (1) has a resonator element (20) and an actuator (30) for inducing an elastic deformation of the resonator element (20) dependent on the electrical input signal. For temperature stabilization, the electromechanical transducer (1) has a sensing element (40) for providing an electrical sensing signal has a function of a temperature of the resonator element (20), and a heating element (50) for heating the resonator element to reduce the temperature dependent frequency deviation to keep the resonance frequency equal to the nominal frequency at operating temperature. The heating element (50) is controlled by an electrical heating signal based on the electrical sensing signal. The resonator element may have the hating element or the sensing element; it may be part of a wheatstone bridge; it may consist of two longitudinally extendable parts (201, 202) extending in opposite directions, being attached in a support area (204) in a deformation free part (203).

Abstract: Micromechanical structures having at least one lateral capacitive transducer gap filled with a dielectric and method of making same are provided. VHF and UHF MEMS-based vibrating micromechanical resonators filled with new solid dielectric capacitive transducer gaps to replace previously used air gaps have been demonstrated at 160 MHz, with Q's˜20,200 on par with those of air-gap resonators, and motional resistances (Rx's) more than 8× smaller at similar frequencies and bias conditions. This degree of motional resistance reduction comes about via not only the higher dielectric constant provided by a solid-filled electrode-to-resonator gap, but also by the ability to achieve smaller solid gaps than air gaps. These advantages with the right dielectric material may now allow capacitively-transduced resonators to match to the 50-377? impedances expected by off-chip components (e.g., antennas) in many wireless applications without the need for high voltages.

Abstract: A microelectromechanical resonator may include one or more resonator masses that oscillates in a bulk mode and that includes a first plurality of regions each having a density, and a second plurality of regions each having a density, the density of each of the second plurality of regions differing from the density of each of the first plurality of regions. The second plurality of regions may be disposed in a non-uniform arrangement. The oscillation may include a first state in which the resonator mass is contracted, at least in part, in a first and/or a second direction, and expanded, at least in part, in a third and/or a fourth direction, the second direction being opposite the first direction, the fourth direction being opposite the third direction.

Abstract: One embodiment of the present invention sets forth a serrated tooth actuator for driving MEMS resonator structures. The actuator includes a fixed drive electrode having a serrated tooth surface opposing a MEMS resonator arm also having a serrated tooth surface, where the MEMS resonator arm is configured to rotate towards the drive electrode when an AC signal is applied to the drive electrode. Such a configuration permits higher amplitude signals to be applied to the drive electrode without the performance of the actuator being compromised by nonlinear effects. In addition, the serrated tooth configuration enables a sufficiently high actuating force to be maintained even though the distance traversed by the MEMS resonator arm during operation is quite small. Further, the serrated configuration allows a MEMS resonator system to withstand larger fluctuations in voltage and larger substrate stresses without experiencing a substantial shift in resonant frequency.

Abstract: One embodiment of the present invention sets forth a serrated tooth actuator for driving MEMS resonator structures. The actuator includes a fixed drive electrode having a serrated tooth surface opposing a MEMS resonator arm also having a serrated tooth surface, where the MEMS resonator arm is configured to rotate towards the drive electrode when an AC signal is applied to the drive electrode. Such a configuration permits higher amplitude signals to be applied to the drive electrode without the performance of the actuator being compromised by nonlinear effects. In addition, the serrated tooth configuration enables a sufficiently high actuating force to be maintained even though the distance traversed by the MEMS resonator arm during operation is quite small. Further, the serrated configuration allows a MEMS resonator system to withstand larger fluctuations in voltage and larger substrate stresses without experiencing a substantial shift in resonant frequency.

Abstract: One embodiment of the present invention sets forth a serrated tooth actuator for driving MEMS resonator structures. The actuator includes a fixed drive electrode having a serrated tooth surface opposing a MEMS resonator arm also having a serrated tooth surface, where the MEMS resonator arm is configured to rotate towards the drive electrode when an AC signal is applied to the drive electrode. Such a configuration permits higher amplitude signals to be applied to the drive electrode without the performance of the actuator being compromised by nonlinear effects. In addition, the serrated tooth configuration enables a sufficiently high actuating force to be maintained even though the distance traversed by the MEMS resonator arm during operation is quite small. Further, the serrated configuration allows a MEMS resonator system to withstand larger fluctuations in voltage and larger substrate stresses without experiencing a substantial shift in resonant frequency.

Abstract: An electromechanical filter capable of attaining a size reduction and a higher integration and executing a high-sensitivity signal sensing is provided. A quantum device is used as a sensing portion to implement a fine and highly sensitive sensing. A microvibrator 101 that is able to resonate with an input signal, and a sensing electrode 103 arranged at a predetermined interval to the microvibrator are provided. Since a change in an electrostatic capacity between the microvibrator and the sensing electrode can be sensed, a high-sensitivity sensing mechanism that is hard to realize in the prior art can be achieved.

Abstract: An electro mechanical device including: a main body of an electro mechanical device having a lower electrode and a movable member; an overcoat film sealing the main body of the electro mechanical device by maintaining a space, wherein a support post is provided between the overcoat film and the movable member.

Abstract: The invention relates to a MEMS resonator comprising a first electrode, a movable element (48) comprising a second electrode, the movable element (48) at least being movable towards the first electrode, the first electrode and the movable element (48) being separated by a gap (46, 47) having sidewalls. According to the invention, the MEMS resonator is characterized in that the gap (46, 47) has been provided with a dielectric layer (60) on at least one of the sidewalls.

Abstract: The invention provides a grounding strategy for electronic components. In particular, the present provides ground connections in thin-film electronic components by connecting one group of one or more resonators to one ground connection and connecting a second group of one or more resonators to another ground connection.

Abstract: A longitudinally coupled resonator boundary acoustic wave filter device includes a piezoelectric substrate made of LiNbO3 having a principal plane obtained by rotating the Y-axis through about 15 degrees +?10 degrees, a dielectric substrate made of silicon oxide and laminated on the piezoelectric substrate, and an electrode structure arranged at a boundary between the piezoelectric substrate and the dielectric substrate. The electrode structure includes a plurality of IDTs arranged in a direction in which a boundary acoustic wave propagates, and reflectors, wherein where in each of the plurality of IDTs, the overlap width of electrode fingers is W and the interval of electrode fingers is P, W/P is in a range of about 20 to about 45.

Abstract: A method of formation of a microelectromechanical system (MEMS) resonator or filter which is compatible with integration with any analog, digital, or mixed-signal integrated circuit (IC) process, after or concurrently with the formation of the metal interconnect layers in those processes, by virtue of its materials of composition, processing steps, and temperature of fabrication is presented. The MEMS resonator or filter incorporates a lower metal level, which forms the electrodes of the MEMS resonator or filter, that may be shared with any or none of the existing metal interconnect levels on the IC. It further incorporates a resonating member that is comprised of at least one metal layer for electrical connection and electrostatic actuation, and at least one dielectric layer for structural purposes. The gap between the electrodes and the resonating member is created by the deposition and subsequent removal of a sacrificial layer comprised of a carbon-based material.

Abstract: A first supporting section 30 is provided between a substrate section 40 and a second supporting section 20. The first supporting section 30 is structured by, e.g., a film formed from a material having a higher acoustic impedance than a piezoelectric body 11 and the substrate section 40, or a film formed from a material having a smaller Q value than the piezoelectric body 11 and substrate section 40. By inserting the first supporting section 30, most vibration from the second supporting section 20 toward the substrate section 40 is reflected (arrow a), and also a vibration having been transmitted to the substrate section 40 from the second supporting section 20 is prevented from reflecting at the bottom of the substrate section 40 and then returning in a direction of the vibration section 10 (arrow b).

Abstract: One or more pn junctions are provided on the resonating bar of a semiconductor bulk resonator. When a reverse bias is imposed upon the pn junction(s), a variable depletion layer results and, hence, capacitance. The depletion layer capacitance allows for variable coupling to the resonator bar. The variable coupling allows control circuitry to null out or compensate for variation related to temperature and/or drift.

Abstract: Disclosed are capacitive micromechanical resonators optimized for high Q, low motional impedance, and large tuning range. Exemplary resonators were fabricated using a HARPSS-on-SOI process, and demonstrated quality factors up to 119000 in vacuum. For resonators operating between 3 MHz and 30 MHz, the lowest extracted impedance is 218 k? and the largest electrostatic tuning coefficient is ?240 ppm/V2. The disclosed designs are applicable up to at least 200 MHz operation. An oscillator interface circuit comprising of a trans-impedance amplifier and an automatic bias generator providing a temperature-compensating bias voltage is also disclosed. Experiments show temperature drift reduction from 2800 ppm to 39 ppm over a 100° C. range. Process compensation (DFM) of micromechanical resonators, resonators having mass loading elements that allow generation of closely spaced frequencies, and coupled systems comprising of the resonators are also described.

Abstract: A MEMS resonator, a method for manufacturing thereof, and a filter are provided in which a first-order oscillation mode can be used and an S/N ratio of an output signal can be improved. Further, a communication apparatus of high reliability using the filter is provided. A MEMS resonator of the present invention includes an output electrode, a beam capable of oscillating disposed on an input side to face the output electrode and an input electrode, in which the output electrode and the input electrode 27 are separated from the beam in terms of DC. A filter of the present invention includes the above-described MEMS resonator. A communication apparatus of the present invention includes a filter to limit a band of a transmission signal and/or reception signal, and the above-described filter according to the present invention is used as the filter.

Abstract: A system and method are provided which includes ring resonator structures coupled together with beam structure(s). The ring resonators are configured to operate in the contour or breathe mode. The center of the coupling beam structure is used as a nodal anchor point for anchoring the ring resonators and the beam structures, and also provides a reflecting interface. In an embodiment, the coupling beam structure includes two quarter-wavelength matched beams and an anchor located at a nodal point for coupling the two quarter-wavelength matched beams and ring resonator structures. The symmetric ring design also provides a differential drive and sense configuration while balancing the driving forces about the anchor located at the center of the beam structure. The system exhibits low energy losses while providing large sensing signals and a high quality factor (Q) of about 186,000 at a resonant frequency of about twenty-nine (29) MHz.

Abstract: A filter device configured with a plurality of micro-resonators and having a wide specific bandwidth. The filter device is configured as having a plurality of beam-structured, micro-resonators (15), (16), (17), (18) electrically connected in a lattice-forming manner between two input terminals (11), (12) for balanced input and two output terminals (13), (14) for balanced output, each of the plurality of micro-resonators (15), (16), (17), (18) being composed of a resonator group including a plurality of resonators differed in resonance frequency.

Abstract: An electromechanical filter capable of achieving overall miniaturization by employing a micro oscillator such as a carbon nanotube with superior conductivity so as to enable selection of signals of a predetermined frequency. The apparatus includes an inner wall composed of a carbon nanotube that changes physically as a result of an input signal, and an outer wall composed of a carbon nanotube arranged so as to cover the inner wall and spaced by a microscopic gap from the inner wall. The outer wall detects an oscillation of the inner wall when a signal of a predetermined frequency is inputted from a connected signal input side electrode to the inner wall, so that this signal is outputted via a connected signal output side electrode.

Abstract: A microresonator includes a beam-type resonator element in which a beam that is an oscillating portion of the resonator element has a high-resistance portion or an insulating portion.

Abstract: There is provided an electronic component excellent in moisture resistance capable of ensuring electrical connection between electrodes and hermeticity of a sealed region including a vibrating part and suppressing an increase in size.

Abstract: Disclosed is an arrangement including a support and a super-conductive film which is arranged thereon. The film has a plurality of holes in order to form a perforated grating. The holes are optionally round holes having increasing sizes, triangular holes, or holes which are arranged in a meandering manner in the film, and which produce improved properties in relation to signal conversion by a vortex diode and/or in a filter. A DC signal is directly removed therein without additional electronics.

Abstract: In an acoustic wave filter device, a first filter circuit portion includes a first inductor provided in a series arm that couples an input terminal and an output terminal is serially connected to a first acoustic wave resonator, and a second filter circuit portion includes a second inductor provided in the series arm and second and third acoustic wave resonators and connected between one end and the other end of the second inductor and a ground potential. When the pass band center frequency is set as a first center frequency and the center frequency of a filter defined by the inductance of the first and second inductors and the capacitance of the first to third acoustic wave resonators is set as a second center frequency f2, f1 is less than f2.

Abstract: Terminal electrodes 9 for carrying a high frequency device 3 are formed on a surface of a circuit board having its reverse surface covered with a reverse surface conductor layer 6, and a plurality of signal lines 2 for exchanging a signal between the high frequency device 3 and an external circuit are formed thereon. The terminal electrode 9 is arranged at the center of the circuit board, and the signal lines 2 radially extends from the terminal electrode 9. Electromagnetic interference between the signal lines 2 can be reduced, so that out-of-band attenuation characteristics and isolation characteristics can be satisfactorily exhibited in a case where the high frequency device 3 is a duplexer.

Abstract: An arrangement for dividing the output signal of the antenna filter of a radio receiver to two different paths, such as two parallel low-noise amplifier branches of a base station. The divider circuit is physically integrated into a resonator-type antenna filter (RXF). This takes place by placing some conductors (332, 333) of the divider inside some conductive part of the filter structure or the resonator cavity and by using the coupling conductor (331) of the output resonator as part of the input line of the divider at the same time. As the divider is used a Wilkinson divider. Due to the arrangement, a transmission line between the antenna filter and the divider becomes unnecessary, and the dielectric losses of the divider are reduced as compared to the prior art, in which case correspondingly inferior noise qualities can be allowed for low-noise amplifiers.

Abstract: In one embodiment, a split well region of one conductivity type is formed in semiconductor substrate of an opposite conductivity type. The split well region forms one plate of a floating capacitor and an electrode of a transient voltage suppression device.

Abstract: A highly reliable micro-resonator and communication apparatus is provided in which an influence on a substrate caused by an interaction generated by an oscillation between adjacent micro-resonant elements is eliminated. The micro-resonant element includes a plurality of micro-resonant elements using a micro-mechanical oscillation provided on the same substrate, in which a micro-resonant element to oscillate in a first phase and a micro-resonant element to oscillate in a second phase that is a reverse phase to the first phase are disposed to be a pair.

Abstract: A microresonator includes a plurality of beam-type oscillator elements arranged in parallel and to which DC voltages are applied, wherein the DC voltages are caused to be different among the oscillator elements.

Abstract: A nano-resonator including a beam having a composite structure may include a silicon carbide beam and/or a metal conductor. The metal conductor may be vapor-deposited on the silicon carbide beam. The metal conductor may have a density lower than a density of the silicon carbide beam.

Abstract: A mechanical self-reciprocating oscillator and mechanism and method for establishing and maintaining regular back and forth movement of a micromachined device without the aid of any electronic components are provided. The fully mechanical micromachined oscillator and mechanism are driven using only a DC power source on at least one substrate such as a semiconductor chip. The oscillator and mechanism preferably include an electrothermal actuator, that, when actuated, opens a switch to cut off supply current to the actuator. Two versions of the oscillator and mechanism are provided using distinct hysteresis mechanisms, one structural and the other thermal.

Abstract: A mechanical resonator is constructed such that it has a vibration body that performs a mechanical resonant vibration and also has an electrode located in the vicinity of the vibration body and such that it is shaped into the surface shape of the electrode when deformed during a resonance mode of the vibration body, whereby the electrostatic capacitance change per unit vibration displacement amount can be enlarged. In this way, a mechanical resonator can be realized which performs an effective electricity-to-machine or machine-to-electricity conversion. Moreover, this mechanical resonator can be used to realize a small-sized, high-performance filter circuit or switch circuit in a high-density integrated electrical circuit.

Abstract: An RF switching circuit that incorporates a film bulk acoustic resonator (FBAR) device and one or more capacitors that are used to vary the capacitance of the FBAR device to change the frequency range that is blocked by the FBAR device. When the RF switching circuit is in a first switching state, a first set of RF signals in a first frequency range is blocked by the RF switching circuit while RF signals of other frequencies are passed by the RF switching circuit. When the RF switching circuit is in a second switching state, a second set of RF signals in a second frequency range is blocked by the RF switching circuit while RF signals of other frequencies are passed by the RF switching circuit.

Abstract: An object is to provide an electromechanical filter which can define a vibration mode so that a vibrator can be excited only in a desired vibration mode, that is, a filter which can suppress any vibration mode other than a desired vibration mode. The electromechanical filter includes a first member for inputting a signal, a second member disposed at a predetermined distance from the first member so as to surround the first member and to be excited due to an electrostatic force caused by the signal input from the first member, and a third member disposed at a predetermined distance from the second member so as to surround the second member and to detect vibration of the second member. The second member is designed to receive an attractive force from the first member and the third member so as to be bound and regulated as to a vibration direction.

Abstract: A pizoelectric filter capable of improving the shielding property and increasing the heat releasing property is provided. The piezoelectric device includes a cover and piezoelectric device chips which are stacked and sealed together. The piezoelectric device also includes first external electrodes exposed at an upper surface of the cover and a grounded second external electrode exposed at the upper surface and a side surface of the cover. Electroconductive bonding materials are disposed between the cover and the piezoelectric device chips and all around an outer edge which connects the cover to the piezoelectric device chips so as to form a seal. The electroconductive bonding materials are also connected to the grounded second external electrode.

Abstract: A MEMS filter has an input layer for receiving a signal input, and an output layer for providing a signal output. The MEMS filter also has a first resonator and a second resonator coupled to the first resonator such that movement transduced in the first resonator by the signal input causes movement of the second resonator which transduces the signal output. A method of manufacturing a MEMS filter is also disclosed. A dielectric layer is formed on a base. A patterned electrode layer is formed at least in part on the dielectric layer. The base is etched to define a resonator structure. A method of adjusting a desired input impedance and an output impedance of a dielectrically transduced MEMS filter having transduction electrodes coupled to a dielectric film is further disclosed. The method includes adjusting a DC bias voltage on the transduction electrodes.

Abstract: A filter device substrate 1 of the present invention is formed by stacking a plurality of ceramic layers 12, 14, and includes a filter chip mounting portion for mounting a transmission filter chip 2 and a reception filter chip 3. Arranged on a surface of one ceramic layer 12 are a signal input pad 73, a signal output pad 7, a signal input side ground pattern 44 and a signal output side ground pattern 43 for connecting a signal input terminal C, a signal output terminal D, a signal input side ground terminal G and a signal output side ground terminal G, respectively, of the reception filter chip 3. The signal input side ground pattern 44 and the signal output side ground pattern 43 are connected to each other by a connection wiring pattern 45 on the surface of the one ceramic layer 12.

Abstract: An electro mechanical device including: a main body of an electro mechanical device having a lower electrode and a movable member; an overcoat film sealing the main body of the electro mechanical device by maintaining a space, wherein a support post is provided between the overcoat film and the movable member.

Abstract: There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a temperature compensated microelectromechanical resonator as well as fabricating, manufacturing, providing and/or controlling microelectromechanical resonators having mechanical structures that include integrated heating and/or temperature sensing elements. In another aspect, the present invention is directed to fabricate, manufacture, provide and/or control microelectromechanical resonators having mechanical structures that are encapsulated using thin film or wafer level encapsulation techniques in a chamber, and including heating and/or temperature sensing elements disposed in the chamber, on the chamber and/or integrated within the mechanical structures. Other aspects of the inventions will be apparent from the detailed description and claims herein.

Abstract: A plurality of mechanically coupled MEMS resonators that are arranged in an N x M MEMS array structure. Each MEMS resonators includes a plurality of straight (or substantially straight) elongated beam sections that are connected by curved/rounded sections. Each elongated beam section is connected to another elongated beam section at a distal end via the curved/rounded sections thereby forming a geometric shape (e.g., a rounded square). Further, each resonator is mechanically coupled to at least one other adjacent resonator of the array via a resonator coupling section. The resonator coupling sections may be disposed between elongated beam sections of adjacent resonators. The resonators, when induced, oscillate at the same or substantially the same frequency. The resonators oscillate in a combined elongating (or breathing) mode and bending mode; that is, the beam sections exhibit an elongating-like (or breathing-like) motion and a bending-like motion.

Abstract: A voltage tunable resonator is provided, including a dielectric base made of a dielectric material having at least one of a voltage dependent dielectric constant and piezoelectric characteristics. A metal contact having a predetermined area is provided on an outer surface of the dielectric base at a predetermined location to provide a predetermined loaded Q for the resonator, and a metal ground coating is provided on the remaining exposed surfaces of the dielectric base, and an isolation region having a sufficient area to prevent significant coupling between the metal contact and the metal ground coating. A control voltage applied between the metal contact and the metal ground coating provides at least one of (i) a variable electric field to control the dielectric constant and a resonant frequency of the resonator and (ii) a piezoelectric response causing a dimensional change in the resonator to control the resonant frequency of the resonator.

Abstract: A micro-resonator of a single structure which outputs signals of two resonance frequencies of mutually opposite phases and in which different resonance frequencies are adjusted independently is provided. The micro-resonator includes: an oscillation portion 6 sustained with a gap by support portions 8 [8A, 8B] and an input electrode 3 and an output electrode 4 that become lower electrodes facing the oscillation portion 6 across the gap, in which the input electrode 3 and the output electrode 4 are disposed to face each other along a line intersecting the oscillation portion 6, the oscillation portion 6 generates torsional oscillation and flexural oscillation, and output signals of two resonance frequencies close to each other based on different resonance modes have mutually different phases by 180°.