Abstract: A first stepped structure configured to apply a reflectance difference and a second stepped structure configured to change a far field light intensity distribution are provided. A region in which a level difference of the first stepped structure is formed has a predetermined relationship with a region in which a level difference of the second stepped structure is formed.

Abstract: An optoelectronic component (1) is specified, comprising a semiconductor body (2) with a semiconductor layer sequence. The semiconductor layer sequence of the semiconductor body (2) comprises a pump region (3) provided for generating a pump radiation and an emission region (4) provided for generating an emission radiation. The emission region (4) and the pump region (3) are arranged one above the other. The pump radiation optically pumps the emission region (4) during operation of the optoelectronic component (1). The emission radiation emerges from the semiconductor body (2) with the semiconductor layer sequence in a lateral direction during operation of the optoelectronic component (1).

Abstract: In a III-nitride semiconductor laser device, a laser structure includes a support base comprised of a hexagonal III-nitride semiconductor and having a semipolar primary surface, and a semiconductor region provided on the semipolar primary surface of the support base. An electrode is provided on the semiconductor region of the laser structure. The c-axis of the hexagonal III-nitride semiconductor of the support base is inclined at an angle ALPHA with respect to a normal axis toward the m-axis of the hexagonal III-nitride semiconductor. The angle ALPHA is in the range of not less than 45 degrees and not more than 80 degrees or in the range of not less than 100 degrees and not more than 135 degrees. The laser structure includes first and second fractured faces that intersect with an m-n plane defined by the m-axis of the hexagonal III-nitride semiconductor and the normal axis. A laser cavity of the III-nitride semiconductor laser device includes the first and second fractured faces.

Abstract: Metallization patterns are provided to reduce the probability of chip fracture in semiconductor lasers. According to one embodiment disclosed herein, the pad edges of a metallization pattern extend across a plurality of crystallographic planes in the laser substrate. In this manner, cracks initiated at any given stress concentration would need to propagate across many crystallographic planes in the substrate to reach a significant size. Additional embodiments of the present disclosure relate to the respective geometries and orientations of adjacent pairs of contact pads. Still further embodiments are disclosed and claimed.

Abstract: A semiconductor device of the invention is formed so that n-type InP current blocking layers enter the inside of p-type InP cladding layers, i.e., the n-type current blocking layers ride over the upper part of the p-type InP cladding layers, so that a distance between the n-type InP current block layers composing a current blocking region is narrower than a width of the p-type cladding layers contacting with the n-type InP current blocking layers. Thereby, the semiconductor device whose leak current in the current blocking region may be reduced which permits high-output and high-temperature operations may be readily fabricated.

Abstract: Light emitting systems are disclosed. The light emitting system includes an electroluminescent device that emits light at a first wavelength. The light emitting system further includes an optical cavity that enhances emission of light from a top surface of the light emitting system and suppresses emission of light from one or more sides of the light emitting system. The optical cavity includes a semiconductor multilayer stack that receives the emitted first wavelength light and converts at least a portion of the received light to light of a second wavelength. The semiconductor multilayer stack includes a II-VI potential well. The integrated emission intensity of all light at the second wavelength that exit the light emitting system is at least 10 times the integrated emission intensity of all light at the first wavelength that exit the light emitting system.

Abstract: Light emitting devices are provided comprising an active region interposed between n-type and p-type sides of the device and a hole blocking layer interposed between the active region and the n-type side of the device. The active region comprises an active MQW structure and is configured for electrically-pumped stimulated emission of photons in the green portion of the optical spectrum. The n-type side of the light emitting device comprises an n-doped semiconductor region. The p-type side of the light emitting device comprises a p-doped semiconductor region. The n-doped semiconductor region comprises an n-doped non-polar or n-doped semi-polar substrate. Hole blocking layers according to the present disclosure comprise an n-doped semiconductor material and are interposed between the non-polar or semi-polar substrate and the active region of the light emitting device. The hole blocking layer (HBL) composition is characterized by a wider bandgap than that of the quantum well barrier layers of the active region.

Abstract: A laser, such as a horizontal cavity surface emitting laser, with internal polarization rotation may be used in thermally assisted recording in hard disk drives. The desired polarization of the laser may be accomplished with two beam reflections off of facets within the laser. The facets may be formed in a single ion beam etching step. The laser may be used on a thermally assisted recording head to produce a polarized beam that is aligned with a track direction of the disk.

Abstract: A Vertical Cavity Surface Emitting Laser (VCSEL) capable of providing high output of fundamental transverse mode while preventing oscillation of high-order transverse mode is provided. The VCSEL includes a semiconductor layer including an active layer and a current confinement layer, and a transverse mode adjustment section formed on the semiconductor layer. The current confinement layer has a current injection region and a current confinement region. The transverse mode adjustment section has a high reflectance area and a low reflectance area. The high reflectance area is formed in a region including a first opposed region opposing to a center point of the current injection region. A center point of the high reflectance area is arranged in a region different from the first opposed region. The low reflectance area is formed in a region where the high reflectance area is not formed, in an opposed region opposing to the current injection region.

Abstract: Provided is a nitride semiconductor laser device that is reduced in capacitance to have a better response. The nitride semiconductor laser device includes: an active layer; an upper cladding layer which is stacked above the active layer; a low dielectric constant insulating film which is stacked above the upper cladding layer; and a pad electrode which is stacked above the low dielectric constant insulating film.

Abstract: A laser diode arrangement having at least one semiconductor substrate, having at least two laser stacks each having an active zone and having at least one intermediate layer. The laser stacks and the intermediate layer are grown monolithically on the semiconductor substrate. The intermediate layer is arranged between the laser stacks. The active zone of the first laser stack can be actuated separately from the active zone of the at least one further laser stack.

Abstract: Methods and apparatus for improved single-mode selection in a quantum cascade laser. In one example, a distributed feedback grating incorporates both index-coupling and loss-coupling components. The loss-coupling component facilitates selection of one mode from two possible emission modes by periodically incorporating a thin layer of “lossy” semiconductor material on top of the active region to introduce a sufficiently large loss difference between the two modes. The lossy layer is doped to a level sufficient to induce considerable free-carrier absorption losses for one of the two modes while allowing sufficient gain for the other of the two modes. In alternative implementations, the highly-doped layer may be replaced by other low-dimensional structures such as quantum wells, quantum wires, and quantum dots with significant engineered intraband absorption to selectively increase the free-carrier absorption losses for one of multiple possible modes so as to facilitate single-mode operation.

Abstract: A semiconductor laser device comprising a laser diode with an integrated photodiode, wherein one of the components of the laser diode with the integrated photodiode is also used for heating the laser diode. A simpler design of a wavelength-controlled semiconductor laser is thus obtained.

Abstract: An apparatus includes an extended cavity vertical cavity surface emitting laser producing light and having an active region, a first reflector position adjacent to a first side of the active region, an extended cavity positioned adjacent to a second side of the active region, and a second reflector reflecting a first portion of the light into the extended cavity and transmitting a second portion of the light, a planar waveguide positioned adjacent to the extended cavity vertical cavity surface emitting laser, and a horizontal coupler structured to couple the second portion of light from the extended cavity vertical cavity surface emitting laser into the waveguide.

Abstract: A light emitting assembly comprising a solid state device coupleable with a power supply constructed and arranged to power the solid state device to emit from the solid state device a first, relatively shorter wavelength radiation, and a down-converting luminophoric medium arranged in receiving relationship to said first, relatively shorter wavelength radiation, and which in exposure to said first, relatively shorter wavelength radiation, is excited to responsively emit second, relatively longer wavelength radiation. In a specific embodiment, monochromatic blue or UV light output from a light-emitting diode is down-converted to white light by packaging the diode with fluorescent organic and/or inorganic fluorescers and phosphors in a polymeric matrix.

Abstract: A surface-emitting laser includes a surface relief structure provided on an upper multilayer reflector, the surface relief structure including a region of a first laminate, a region of a second laminate that has a larger optical thickness than the first laminate, and a region of a third laminate that has a larger optical thickness than the first laminate and the second laminate.

Abstract: The invention includes a single chip having multiple different devices integrated thereon for a common purpose. The chip includes a substrate having a peripheral area, a mid-chip area, and a central area. A plurality of FETs are formed in the peripheral area with each FET having a layer of single crystal rare earth material in at least one of a conductive channel, a gate insulator, or a gate stack. A plurality of photonic devices including light emitting diodes or vertical cavity surface emitting lasers are formed in the mid-chip area with each photonic device having an active layer of single crystal rare earth material. A plurality of photo detectors are formed in the central area.

Abstract: A surface-emitting semiconductor laser device is provided that includes an edge-emitting laser integrated in a semiconductor material with various reflectors and a diffractive lens. The edge-emitting laser has a first section comprising an active MQW region, a second section comprising a passive region and a third section comprising a semi-insulating or un-doped semiconductor bulk layer. This configuration ensures that the injection current will pass through all of the layers of the active region, thereby preventing the occurrence of optical losses due to un-injected areas of the MQW active region. In addition, the inclusion of the passive region ensures that there is no current passing through the interface between the active MQW region and the regrown semiconductor bulk layer. The latter feature improves performance and device reliability.

Abstract: A process for fabricating AlGaInN-based photonic devices, such as lasers, capable of emitting blue light employs etching to form device waveguides and mirrors, preferably using a temperature of over 500° C. and an ion beam in excess of 500 V in CAIBE.

Abstract: A laser and electroabsorption modulator (EAM) are monolithically integrated through an etched facet process. Epitaxial layers on a wafer include a first layer for a laser structure and a second layer for an EAM structure. Strong optical coupling between the laser and the EAM is realized by using two 45-degree turning mirrors to route light vertically from the laser waveguide to the EAM waveguide. A directional angled etch process is used to form the two angled facets.

Abstract: According to one embodiment, a solid-state imaging device includes a semiconductor layer including first and second regions, a pixel portion provided in the first region, electrodes provided in the second region and configured to penetrate the semiconductor layer, and a guard ring provided in the second region and configured to penetrate the semiconductor layer and electrically isolate the pixel portion from the electrodes. An upper surface of the semiconductor layer in the second region is lower than an upper surface of the semiconductor layer in the first region.

Abstract: A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.

Abstract: A process for fabricating AlGaInN-based photonic devices, such as lasers, capable of emitting blue light employs dry etching to form device waveguides and mirrors. The dry etching is preferably performed using a Chemically Assisted Ion Beam Etching (CAIBE) system.

Abstract: An active photonic device assembly comprising a substrate and a waveguide entity provided on the substrate. The active photonic device assembly further comprises a contact layer of a first III/V material epitaxially grown laterally on top of the waveguide entity from opening fillings in turn provided on a substrate surface. An active photonic device is provided on the contact layer.

Abstract: Dry oxygen, dry air, or other gases such as ozone are hermetically sealed within the package of the external cavity laser or ASE swept source to avoid packaging-induced failure or PIF. PIF due to hydrocarbon breakdown at optical interfaces with high power densities is believed to occur at the SLED and/or SOA facets as well as the tunable Fabry-Perot reflector/filter elements and/or output fiber. Because the laser is an external cavity tunable laser and the configuration of the ASE swept sources, the power output can be low while the internal power at surfaces can be high leading to PIF at output powers much lower than the 50 mW.

Abstract: A semiconductor light-emitting device including an active layer is provided. The light-emitting device includes an active layer between an n-type semiconductor layer and a p-type semiconductor layer. The active layer includes a quantum well layer formed of Inx1Ga(1?x1)N, where 0<x1?1, barrier layers formed of Inx2Ga(1?x2)N, where 0?x2<1, on opposite surfaces of the quantum well layer, and a diffusion preventing layer formed between the quantum well layer and at least one of the barrier layers. Due to the diffusion preventing layer between the quantum well layer and the barrier layers in the active layer, the light emission efficiency increases.

Abstract: A first contact surface of a semiconductor laser chip can be formed to a target surface roughness selected to have a maximum peak to valley height that is substantially smaller than a barrier layer thickness of a metallic barrier layer to be applied to the first contact surface. A metallic barrier layer having the barrier layer thickness can be applied to the first contact surface, and the semiconductor laser chip can be soldered to a carrier mounting along the first contact surface using a solder composition by heating the soldering composition to less than a threshold temperature at which dissolution of the metallic barrier layer into the soldering composition occurs. Related systems, methods, articles of manufacture, and the like are also described.

Abstract: Methods, apparatus and systems for an up-converter resonant cavity light emitting diode device includes a semiconductor light source, an up-converter to form the light emitter with up-converting materials and an electrical source coupled with the semiconductor light source for providing electrical energy to the semiconductor light source to provide a desired wavelength emitted light. The semiconductor light source is a resonant cavity light emitting diode or laser that emits an approximately 975 mm wavelength to provide electrical and optical confinement to the semiconductor light source to form a resonant cavity up-converting light emitting diode (UC/RCLED). Rows and columns of electrodes provide active matrix addressing of plural sets of UC/RCLEDs for display devices.

Abstract: High performance and high reliability of a semiconductor laser device having a buried-hetero structure are achieved. The semiconductor laser device having a buried-hetero structure is manufactured by burying both sides of a mesa structure by a Ru-doped InGaP wide-gap layer and subsequently by a Ru-doped InGaP graded layer whose composition is graded from InGaP to InP, and then, by a Ru-doped InP layer. By providing the Ru-doped InGaP graded layer between the Ru-doped InGaP wide-gap layer and the Ru-doped InP layer, the Ru-doped InGaP wide-gap layer and the Ru-doped InP layer not lattice-matching with each other can be formed as a buried layer with excellent crystallinity.

Abstract: A semiconductor laser device includes a nitride semiconductor laminate structure including an n-type clad layer, an n-type guide layer formed on the n-type clad layer, a light emitting layer formed on the n-type guide layer and a p-type semiconductor layer formed on the light emitting layer. The nitride semiconductor laminate structure does not include a p-type semiconductor clad layer. The semiconductor laser device further includes an upper clad layer formed on the p-type semiconductor layer. The upper clad layer includes a first conductive film made of an indium oxide-based material and a second conductive film formed on the first conductive film and made of a zinc oxide-based material, a gallium oxide-based material or a tin oxide-based material.

Abstract: A semiconductor laser module includes a semiconductor laser unit and a light selecting unit. The semiconductor laser unit includes a semiconductor laser substrate and a plurality of distributed reflector semiconductor laser devices formed on the semiconductor laser substrate in an array. Each of the distributed reflector semiconductor laser devices is configured to emit a laser light of a different wavelength from an output facet. The light selecting unit includes a light selecting device substrate and a light selecting device formed on the light selecting device substrate. The light selecting device is configured to selectively output a laser light emitted from a distributed reflector semiconductor laser device. The semiconductor laser unit and the light selecting unit are attached to each other in such a manner that the light selecting device is optically coupled to the distributed reflector semiconductor laser devices.

Abstract: A semiconductor light emitting device downsized by devising arrangement of connection pads is provided. A second light emitting device is layered on a first light emitting device. The second light emitting device has a stripe-shaped semiconductor layer formed on a second substrate on the side facing to a first substrate, a stripe-shaped p-side electrode supplying a current to the semiconductor layer, stripe-shaped opposed electrodes that are respectively arranged oppositely to respective p-side electrodes of the first light emitting device and electrically connected to the p-side electrodes of the first light emitting device, connection pads respectively and electrically connected to the respective opposed electrodes, and a connection pad electrically connected to the p-side electrode. The connection pads are arranged in parallel with the opposed electrodes.

Abstract: A laser, such as a horizontal cavity surface emitting laser, with internal polarization rotation may be used in thermally assisted recording in hard disk drives. The desired polarization of the laser may be accomplished with two beam reflections off of facets within the laser. The facets may be formed in a single ion beam etching step. The laser may be used on a thermally assisted recording head to produce a polarized beam that is aligned with a track direction of the disk.

Abstract: Solid state lighting devices containing quantum dots dispersed in polymeric or silicone acrylates and deposited over a light source. Solid state lighting devices with different populations of quantum dots either dispersed in matrix materials or not are also provided. Also provided are solid state lighting devices with non-absorbing light scattering dielectric particles dispersed in a matrix material containing quantum dots and deposited over a light source. Methods of manufacturing solid state lighting devices containing quantum dots are also provided.

Abstract: A light-emitting element mount (4) is fixed onto a base (8), and a semiconductor laser element (1) is fixed onto the light-emitting element mount (4). An anchor member (5), which is in the shape of a roughly rectangular plate, is fixed onto the base (8). An optical fiber (2) is fixed onto the anchor member (5) by means of an anchoring material (6). The optical fiber (2) is aligned and optically coupled with the semiconductor laser element (1). A cut-out (9) is formed in the part of the base (8) corresponding to the anchoring material (6) (below the anchoring material (6)). Thus the anchor member (5) is fixed onto the base (8) so as to straddle the cut-out (9). Since the cut-out (9) is formed below the anchor member (5), a spot heater (10) or like can be used to heat the anchor member (5) from the bottom surface thereof. Thus, the anchoring material (6) on top of the anchor member (5) can be efficiently heated.

Abstract: An optical device for improving conduction and reflectivity and minimizing absorption. The optical device includes a first mirror comprising a first plurality of mirror periods designed to reflect an optical field at a predetermined wavelength, where the optical field has peaks and nulls. Each of the plurality of mirror periods includes a first layer of having a high carrier mobility, a second layer having lower carrier mobility, and a first compositional ramp between the first and second layers. The thicknesses of the first and second layers for at least a portion of the first plurality of mirror periods are established such that the nulls of the optical field occur within the first layer and not within the compositional ramp. At least the portion of the first layers within the first plurality of mirror periods include elevated doping concentrations at locations of the nulls of the optical field.

Abstract: A method for making a microchip laser includes preparing a laser-cavity chip assembly comprising a gain media, a first substantially flat surface, and a second substantially flat surface parallel to the first substantially flat surface. The method also includes forming a first reflective film on the first substantially flat surface to form a first cavity mirror, forming a second reflective film on the second substantially flat surface to form a second cavity mirror, and patterning at least one of the first reflective film or the second reflective film by removing at least a portion of the reflective film in the outer portion to form a center reflective portion in the one of the first reflective film or the second reflective film. The first cavity mirror and the second cavity mirror can suppress higher order transverse modes and produce a single TEM00 mode in the lasing light.

Abstract: The present invention is directed to the integration of a quantum cascade laser with a hollow waveguide on a chip to improve both the beam pattern and manufacturability. By coupling the QCL output into a single-mode rectangular waveguide the radiation mode structure can be known and the propagation, manipulation, and broadcast of the QCL radiation can then be entirely controlled by well-established rectangular waveguide techniques. By controlling the impedance of the interface, enhanced functions, such as creating amplifiers, efficient coupling to external cavities, and increasing power output from metal-metal THz QCLs, are also enabled.

Abstract: The present invention relates to a laser device comprising at least one large area VCSEL (101) and at least one optical feedback element (201, 301) providing an angular-selective feedback for laser radiation emitted from the laser. The angular-selective feedback is higher for at least one portion of laser radiation emitted at angles ?>0 to the optical axis (601) of the laser than for laser radiation emitted on said optical axis (601). The invention also refers to a method of stabilizing a laser emission of a large area VCSEL in a desired angular distribution (501, 502). With the proposed device and method, the intensity distribution of a large area VCSEL can be stabilized in a desired shape, for example a ring shape.

Abstract: An optical semiconductor device includes: a beam splitter that splits an input optical axis into a first split axis having a first split angle and a second split axis having a second split angle larger than the first split angle; a first unit that is located on the first split axis of the beam splitter and has one or more optical components, an interval between a more distant end of the first unit and the beam splitter having a first length; a second unit that is located on the second split axis of the beam splitter and has one or more optical components, an interval between a more distant end of the second unit and the beam splitter having a second length larger than the first length; and an optical semiconductor element that has a first outputting end having a first output axis coupled optically to the input optical axis of the beam splitter, a second outputting end having a second output axis, and optical gain, the optical semiconductor element being inclined so that the second output axis is arranged away

Abstract: A light emitting and receiving device having a first region and a second region adjacent to the first region in a plan view, includes: a light absorbing layer formed in the first and second regions; a first cladding layer formed above the light absorbing layer; an active layer formed above the first cladding layer in the first region; and a second cladding layer formed above the active layer, wherein at least part of the active layer forms a gain region, a stepped side surface having an end surface of the gain region is formed at the boundary between the first region and the second region, light produced in the gain region exits through the end surface of the gain region, and part of the light having exited reaches the light absorbing layer in the second region and is received by the light absorbing layer.

Abstract: An electro-absorption modulator includes: a semiconductor substrate; and an n-type InP cladding layer, an AlGaInAs light absorbing layer, an InGaAsP optical waveguide layer, and a p-type InP cladding layer, which are sequentially laminated on the semiconductor substrate. The InGaAsP optical waveguide layer includes a plurality of InGaAsP layers with different constitutions. The energy barrier between valence band edges of the InGaAsP layers is smaller than the energy barrier when the InGaAsP optical waveguide layer includes only one InGaAsP layer.

Abstract: A vertical cavity surface emitting laser (VCSEL) is described using a sub-wavelength grating (SWG) structure that has a very broad reflection spectrum and very high reflectivity. The grating comprises segments of high and low refractive index materials with an index differential between the high and low index materials. By way of example, a SWG reflective structure is disposed over a low index cavity region and above another reflective layer (either SWG or DBR). In one embodiment, the SWG structure is movable, such as according to MEMS techniques, in relation to the opposing reflector to provide wavelength selective tuning. The SWG-VCSEL design is scalable to form the optical cavities for a range of SWG-VCSELs at different wavelengths, and wavelength ranges.

Abstract: The semiconductor device includes: a base; a first mount placed on the bottom of the base; a second mount placed on the top of the base; a first light-emitting element placed on the bottom of the first mount; and a second light-emitting element placed on the top of the second mount for emitting light. The first light-emitting element and the second light-emitting element are placed so that the emission direction of light from the second light-emitting element is at an angle of depression with respect to the emission direction of light from the first light-emitting element and that the emission direction of light from the first light-emitting element and the emission direction of light from the second light-emitting element substantially coincide with each other as viewed from above the base.

Abstract: A VCSEL structure is provided. The VCSEL structure comprises a substrate. The structure may also include one or more conducting layers positioned on the substrate. There may be void spaces positioned between portions of the conducting layers to electrically isolate the portions. A method for fabricating the VCSEL structure is also provided.

Abstract: Various embodiments of the present, invention are directed to surface-emitting lasers with the cavity including at least one single-layer, non-periodic, sub-wavelength grating. In one embodiment, a surface-emitting laser comprises a grating layer (112) configured with a non-periodic, sub-wavelength grating (122), a reflective layer, and a light-emitting layer (102) disposed between the grating layer and the reflector. The non-periodic, sub-wavelength grating is configured with a grating pattern that controls the shape of one or more internal cavity modes, and controls the shape of one or more external transverse modes emitted from the surface-emitting laser.

Abstract: A wavelength tunable filter and a wavelength tunable laser module are a codirectional coupler type whose characteristics do not vary significantly with a process error. They are structured so as to include a semiconductor substrate which has a first optical waveguide and a second optical waveguide. The first and the second optical waveguides are extended from a first side of the semiconductor substrate to an opposing second side thereof. The first optical waveguide includes a first core layer, which has a planar layout having periodic convexes and concaves, and a pair of electrodes, which vertically sandwich the first core layer. The second optical waveguide includes a second core layer, which has a lower refractive index than the first core layer. Further, a layer having the same composition and film thickness as the second core layer is placed under the first core layer.

Abstract: A nitride semiconductor laser device includes a first semiconductor layer, an active layer, a second semiconductor layer having a ridge portion and a planar portion, a first electrode formed above the ridge portion, and a dielectric film formed on the side wall portion of the ridge portion. A region from a front end face to a predetermined position P is a region A. A region from the predetermined position P to the rear end face is a region B. A thickness of the part of the ridge portion exposed from the dielectric film in the region A is greater than a thickness of the part of the ridge portion exposed from the dielectric film in the region B, and the first electrode is in contact with the ridge portion at least in the region A.

Abstract: A laser device includes a ridge waveguide having an active layer between upper and lower cladding layers. A ridge formed in the upper cladding layer defines the width of a light guiding region in the active layer, and is formed so that a portion of the light guiding region extends into the ridge. A plurality of reflecting slots extend across and into the ridge to a depth sufficient to extend into the extending portion in order that the reflectivity of each slot is on the order of 2%. The slots intersect more than 20% of the total mode energy in the light guiding region, and this in combination with the gain of the active layer facilitates lasing within the light guiding region independently of the reflectivity of end facets of the waveguide. The laser device is particularly suitable for integrally forming with other optical components on a single semiconductor chip.

Abstract: A diode laser structure includes multiple stripe emitters disposed next to each other, in which each of the stripe emitters is configured to emit, during operation, a laser beam having a corresponding beam parameter product with respect to a slow axis (BPPSA), where the stripe emitters are arranged such that the corresponding BPPSA of the laser beams successively decrease from a center of the diode laser structure towards a first edge of the diode laser structure and from the center of the diode laser structure towards a second edge of the diode laser structure, the second edge being opposite the first edge. The stripe emitters are oriented in a direction of the slow axis and are offset from one another in the direction of the slow axis.