Abstract: A radiation scattering measurement system, such as an x-ray diffraction system, uses a modified beamstop, or attenuator, to allow simultaneous detection of energy scattered from a sample and energy transmitted through the sample. Rather than entirely blocking the transmitted beam energy from reaching a detector of the system, the attenuator blocks only an outer portion of the transmitted beam, so that a shadow region is created on the detector surrounding the detector region upon which the transmitted beam is incident. This local region of minimum intensity defines a boundary on the detector between the transmitted beam energy and the energy scattered from the sample. The attenuator also reduces the per-unit-area intensity of the transmitted beam using a broadband filter element, so that the transmitted beam does not saturate the detector. A single detector frame is taken containing the beam energy and the scattered energy, and the minimum intensity boundary between the two is located.

Abstract: An x-ray diffraction system for determining stress in integrated circuit materials includes a source of x-rays (3) that are directed toward a sample holding mechanism for diffracting from the test sample (8). An x-ray detector (14) is arranged for detecting high back reflected diffracted x-ray intensity data representing stress in the test sample. A two-dimensional detection and storage arrangement (24) is arranged for detecting and storing the data representing stress in the test sample. A data processor (2) accesses the stored data from the two-dimensional detection and storage arrangement and processes the data representing stress in the test sample to determine stress in the test sample.

Abstract: A method for identifying desired features in an off-orientation crystal uses radiation, such as x-rays, directed toward the crystal in a first direction to detect a unique region in a first direction. Based on identifying the unique region, the location of a desired feature, such as a key growth line, is approximated. Radiation is then directed at the crystal in a second direction transverse to the first direction to determine the precise location of the desired feature. The method can be performed automatically by a programmed x-ray device.

Abstract: The present invention relates to X-ray devices for the investigation of material structure, density and geometry of reflected surfaces by measuring reflected, diffracted or scattered radiation. These X-ray optical devices are especially useful for measuring polished surfaces with large reflective areas which are used in the electronics and the computer industry (wafers, memory discs), high precision mechanics and optics. The present invention describes a device which increases the accuracy and efficiency in which X-ray reflectometry measurements can be made in different parts of the X-ray spectral region. The main technical advantages of the invention are a two-fold reduction in the ultimate error of angular measurements in different spectral regions, and a decrease in the random errors associated with the intensity measurements that are observed which are due in part to a drift in the electric parameters of the device.

Abstract: An apparatus and method are present which use X-ray fluorescence techniques to determine the roughness of a target surface. The apparatus includes an X-ray source and an X-ray detector. The X-ray source produces primary X-ray photons formed into a primary X-ray beam, and the primary X-ray beam is directed to and incident upon the target surface. The X-ray detector is positioned to receive primary X-ray photons scattered by the target surface. A fraction of the primary X-ray photons scattered by the target surface is directly proportional to the roughness of the target surface. The roughness of the target surface is determined from the number of primary X-ray photons scattered by the target surface and received by the X-ray detector within a predetermined exposure time. The X-ray detector produces an output signal proportional to the energy levels of received X-ray photons. An energy range of interest is divided into segments.

Abstract: A method for detecting an absorption, refraction and scatter image of an object by independently analyzing, detecting, digitizing, and combining images acquired on a high and a low angle side of a rocking curve of a crystal analyzer. An x-ray beam which is generated by any suitable conventional apparatus can be irradiated upon either a Bragg type crystal analyzer or a Laue type crystal analyzer. Images of the absorption, refraction and scattering effects are detected, such as on an image plate, and then digitized. The digitized images are simultaneously solved, preferably on a pixel-by-pixel basis, to derive a combined visual image which has dramatically improved contrast and spatial resolution over an image acquired through conventional radiology methods.

Abstract: An x-ray diffraction system for determining stress in integrated circuit materials includes a source of x-rays (3) that are directed toward a sample holding mechanism for diffracting from the test sample (8). An x-ray detector (14) is arranged for detecting high back reflected diffracted x-ray intensity data representing stress in the test sample. A two-dimensional detection and storage arrangement (24) is arranged for detecting and storing the data representing stress in the test sample. A data processor (2) accesses the stored data from the two-dimensional detection and storage arrangement and processes the data representing stress in the test sample to determine stress in the test sample.

Abstract: A method and apparatus for x-ray measurement of certain properties of a solid material. In distinction to known methods and apparatus, this invention employs a specific fiber-optic bundle configuration, termed a reorganizer, itself known for other uses, for coherently transmitting visible light originating from the scintillation of diffracted x-radiation from the solid material gathered along a substantially one dimensional linear arc, to a two-dimensional photo-sensor array. The two-dimensional photodetector array, with its many closely packed light sensitive pixels, is employed to process the information contained in the diffracted radiation and present the information in the form of a conventional x-ray diffraction spectrum. By this arrangement, the angular range of the combined detector faces may be increased without loss of angular resolution.

Abstract: A computer system (1) has a data base (DB1) of analytical procedures (AP) for analysing a material sample (30) using radiation such as X-ray radiation. The computer system requests a user to input to the system (1) information for identifying at least one desired parameter (P.sub.d) of the material sample (30). The computer system (1) uses this information to identify the possible analytical procedures for determining that desired parameter. An analytical procedure or procedures selected by the user and/or computer system is then simulated by the computer system to produce a first simulation (I.sub.1) of radiation leaving the sample. The selected analytical procedure is simulated again after the computer system has varied the influence of the desired parameter (P.sub.d) to produce a second simulation (I.sub.2). The computer system then compares the first and second simulations (I.sub.1 and I.sub.

Abstract: A film thickness measuring method comprises the steps of measuring reflectances of X-rays on a film, extracting interference oscillations from the measured X-ray reflectances, and Fourier transforming the interference oscillations to compute a film thickness of the film, an average reflectance being given by fitting the measured X-ray reflectances to an analysis formula including a term of a product of a power function of an incident angle, which expresses attenuation of reflectances on a smooth surface of the film and an exponent function which expresses influence of roughness of the surface of the film, and a constant term expressing a background added to the product; the interference oscillations being given by using the measured X-ray reflectances and the average reflectance. The film thickness measuring method can extract interference oscillations of a reflectance curve by a method including arbitrariness and by a simple procedure.

Abstract: A critical illumination condenser system, particularly adapted for use in extreme ultraviolet (EUV) projection lithography based on a ring field imaging system and a laser produced plasma source. The system uses three spherical mirrors and is capable of illuminating the extent of the mask plane by scanning either the primary mirror or the laser plasma source. The angles of radiation incident upon each mirror of the critical illumination condenser vary by less than eight (8) degrees. For example, the imaging system in which the critical illumination condenser is utilized has a 200 .mu.m source and requires a magnification of 26.times.. The three spherical mirror system constitutes a two mirror inverse Cassegrain, or Schwarzschild configuration, with a 25% area obstruction (50% linear obstruction). The third mirror provides the final pupil and image relay. The mirrors include a multilayer reflective coating which is reflective over a narrow bandwidth.

Abstract: A phase-contrast X-ray CT apparatus is provided with an X-ray source for generating an X-ray beam, a crystal for generating a diffracted beam by irradiation with the X-ray beam, an object arranging section provided in the direction of propagation of the diffracted beam so that it is rotatable relative to the diffracted beam, an analyzer crystal for receiving a beam transmitted through the object arranging section to extract only a specified refraction angle component, and a sensor for detecting a beam extracted by the analyzer crystal.

Abstract: A surface processing method effected before the total-reflection X-ray fluorescence analysis is effected is disclosed. The surface processing is to modify all of the contaminants attached at least to the measurement surface of the wafer into particle-shaped residues. For this purpose, the measurement surface of the wafer is first dissolved by hydrofluoric acid to form a large number of droplets on the measurement surface. Next, the thus formed droplets are dried with the position thereof kept unchanged. After the drying, contaminants attached to the measurement surface of the wafer are left as particle-shaped residues. After this, the measurement surface of the wafer is analyzed by the total-reflection X-ray fluorescence analyzing method.

Abstract: An apparatus and method for monitoring structural changes of an electrode in a rechargeable battery include an in situ x-ray study electrochemical cell holder (30) comprising top and bottom cell holder members (32, 34) including at least one beryllium window element (36) for transmission of diffractometer x-radiation. A rechargeable battery cell (43) mounted within the x-ray cell holder enclosure comprises an electrolyte/separator element (68) interposed between positive and negative electrodes (64, 66). A current collector element (70) formed of an electrically-conductive open-mesh grid is disposed between the positive electrode and the separator to enable ion-conducting contact of the electrode and separator while maintaining electrical continuity between the electrode and an external x-ray cell holder terminal (54).

Abstract: A monochromator positioned in the path of a plurality of X-rays to simultaneously impinge the plurality of X-rays onto a thin-film at various angles of incidence, typically greater than a critical angle .psi..sub.c. The monochromator may be cylindrically or toroidally shaped, defining two focal areas with a source of X-rays positioned at the first focal point and a sample containing the thin-film layer positioned at the second focal point. A position sensitive detector is positioned to sense monochromatic X-rays reflected from the thin-film and produce a signal corresponding to both intensity and an angle of reflection of the monochromatic X-rays sensed. A processor is connected to receive signals produced by the detector to determine, as a function of intensity and angle of reflection of the monochromatic X-rays impinging on the detector, various properties of the structure of the thin-film layer, including the thickness, density and smoothness.

Abstract: An apparatus for inspecting single crystal specimens comprises an x-ray generator which supplies x-rays to a collimator. The collimator has a matrix of apertures to produce a plurality of parallel x-ray beams which are directed onto a surface of the specimen. An x-ray detector detects the x-ray beams diffracted from the surface of the specimen, corresponding to each of the parallel x-ray beams. At each symmetry pole of an overall Laue pattern an accurately predictable pattern of spots is produced on the x-ray detector, if the orientation and shape of the specimen crystal is known. Each spot corresponds to where one of the diffracted beams strikes the detector. A disarrangement of one or more of the spots indicates a difference in crystal orientation.

Abstract: A method and apparatus for detecting the mean atomic number of a mass of material, for example freight in a vehicle comprises: subjecting the mass to X-rays and determining the mean number N.sub.A passing therethrough; subjecting the mass to higher energy X-rays and determining the new mean number N.sub.B ; and determining the mean atomic number of the mass from look-up tables against the computed ratio N.sub.A /N.sub.B. The mass, such as a railway wagon, may be scanned by two linear accelerators arranged perpendicular to each other, detector arrays being disposed respectively opposite the accelerators, so that a three dimensional image can be built up of the mass.

Abstract: An X-ray analysis apparatus comprises a dispersive system of crystals for monochromatizing an incoming beam in a diffractometer or for analyzing an X-ray beam in an X-ray spectrometer. The system of crystals comprises crystals whose crystal lattice planes do not extend parallel to effectively reflective crystal surfaces. As a result, a substantially higher effective radiation intensity can be obtained, for example notably for (220) crystal faces in germanium.

Abstract: Improved methods for managing a population of metal components subject to fatigue failure are provided. The residual compressive stress in the critical surfaces of such components, especially in areas of high stress concentration, are measured non-destructively using x-ray diffraction techniques. The measured residual compressive stress is used as a management criteria. A component having a residual compressive stress greater than a predetermined value can be returned to service. However, once the measured residual compressive stress of a component galls below the predetermined value, it can either be removed permanently from service, or it can be reworked to increase its residual compressive stress and then returned to service. Additionally, by measuring the residual compressive stress of an individual component, the remaining service life of that individual component can be estimated.

Abstract: An x-ray mirror material of high reflectance with a surface roughness which is very small and a high film density, the material being a Pt alloy film provided as a mirror surface for reflecting x-ray radiation. The composition of the mirror material is expressed by the general formula: Pt.sub.1-x M.sub.x. This material is deposited on a substrate surface which has been polished to a level form, where M is at least one substance selected from Mo, Ru, Rh, Pd, Ta, W, and Au, and x satisfies the formula: 0.005.ltoreq..times..ltoreq.0.10.

Abstract: A mirror for SOR includes a base (1) made of a heat resistant ceramic material having a surface, a first SiC coating (2, 3) formed on the surface of the base (1), which has a first smoothed surface, and a second SiC coating (4, 5) formed on the first smoothed surface of the first SiC coating (2, 3), which has a second smoothed surface. A third SiC coating can be formed on the smoothed surface of the second SiC coating (4).

Abstract: A fast process for photowriting a permanent, high efficiency optical grating comprises darkening glass by irradiation and photobleaching the darkened glass by exposing the glass to interfering writing laser beams, thereby forming the grating.

Abstract: The present invention discloses diffraction gratings which do not generate any thermal strain and can perform extremely high-precision and high-efficiency diffraction nearly free from scattered beams. The diffraction gratings are built by allowing the chemically deposited film of silicon carbide whose crystal planes are strongly oriented to the (220) planes in terms of Miller indices to form on the substrate comprising sintered silicon carbide, polishing the surface of the deposited film to 5 .ANG. RMS or less, and directly etched laminar-type grating grooves on that surface by using ion-beam etching.

Abstract: An X-ray diffractometer having a simple yet accurate means for locating the surface of the sample to be examined with respect to the zero point of the X-ray (RS) is disclosed. Briefly stated, a laser (LA) and camera (KA) are positioned at preferably 90.degree. with respect to each other such that the intersection of the optical axis of the camera and the laser passes through the zero point of the diffractometer. In this fashion, the camera will see at its center, the zero point of the X-ray despite the fact that the X-ray is of course invisible to the naked eye. Accordingly, by movement of the sample (P) with respect to this camera image, the true and correct zero point of the X-ray with respect to the surface of the sample to be examined may be determined without the need for experimental and unnecessary X-ray or examination runs being taken.

Abstract: Pulses generated by an x-ray gas ionisation detector have different temporal forms in dependence of the location in the detector where an x-ray photon interacts with a gas atom. The energy-resolution at count rates amounting to Mcts.sup.-1 of an x-ray analysis apparatus is improved by employing a resetable pulse-integrator. A resetable integrator is constructed by employing a dual gate field-effect transistor (FET) and a wide-band current feedback operational amplifier. Cross-talk due to parasitic capacitances is reduced by supplying a suitable DC voltage to one of the two gates of the dual gate FET. The gate control is made independent of the output of the integrator.

Abstract: A double crystal monochromator including two identical, parallel crystals, each of which is cut such that the normal to the diffraction planes of interest makes an angle less than 90 degrees with the surface normal. Diffraction is symmetric, regardless of whether the crystals are symmetrically or asymmetrically cut, enabling operation of the monochromator with a fixed plane of diffraction. As a result of the inclination of the crystal surface, an incident beam has a footprint area which is elongated both vertically and horizontally when compared to that of the conventional monochromator, reducing the heat flux of the incident beam and enabling more efficient surface cooling. Because after inclination of the crystal only a fraction of thermal distortion lies in the diffraction plane, slope errors and the resultant misorientation of the diffracted beam are reduced.

Abstract: A device for inspecting an article, in which a radiation source irradiates a plane-shaped radiation to an article in order to inspect the content of the article without destroying it. Scattered radiation from the article is applied to a radiation detector through a slit which is formed coincident with a line passing through a focus of the radiation source and which continuously passes a constant full field of scattered radiation. The radiation detector is disposed in parallel with the slit and scattered radiation detected by the radiation detector is displayed as an image of the region of the article which was irradiated by the plane-shaped radiation.

Abstract: A method and apparatus to calibrate and correct magnetic and geometrical distortions in an imaging system, specifically a computer tomography (CT) system, includes a calibration object which is placed on the surface of an image intensifier. An image frame of the calibration object is generated, and a vertical correction table is generated corresponding to the amount of image distortion caused to the image frame of the calibration object. The image frame is corrected using the vertical correction table, and the corrected image frame data is summed or averaged and either stored for further transformation into a slice image or used to generate a horizontal correction table to correct distortions in the horizontal direction. Once the vertical and horizontal correction tables have been generated using the calibration object, subsequent image frames are corrected using the correction values in the correction tables.

Abstract: A total reflection X-ray fluorescence apparatus comprises a base material having an optically flat surface for totally reflecting X-rays radiated at a small glancing angle, a first detector such as an SSD for detecting fluorescent X-rays emerging from a specimen located near the optically flat surface of the base material and a second detector such as a scintillation counter for detecting intensity of X-rays coming from the base material.

Abstract: Disclosed herein is a method of producing a mirror for electromagnetic radiations of short wavelengths, the method including forming a film on a substrate having a surface roughness smaller than 5 .ANG. by bombardment with a metal, which is at least partly in the form of cluster ions, in a vacuum chamber under the conditions that the accelerating voltage applied to the accelerating electrode is of 3-7 kV, the temperature of the substrate is kept at 0.degree.-60.degree. C., the pressure in the vacuum chamber is kept below 1.times.10.sup.-7 Torr, and the film is formed at a rate of 0.5-5 .ANG./s until it becomes 50-1000 .ANG. thick. A mirror form in accordance with this method has a high reflectivity which has never been achieved by conventional methods.

Abstract: A method for using secondary radiation scattering to evaluate the thickness of materials. The thickness of a first material adjacent to a second material may be evaluated by bombarding the first material with radiation and measuring the radiation scattered by the second material behind it. The method is particularly useful in evaluating the thickness of hydrocarbon-carrying pipelines.

Abstract: An X-ray volume analysis method of crystalline defects of a part (11), comprises the steps of positioning the part in the plane situated at equal distance from the focus of an X-ray source and a focusing plane (14); illuminating the part from a punctual X-ray source (10) by a beam of a large spectral width .DELTA..lambda. and of determined angular opening .DELTA..theta., the opening .DELTA..theta. of the beam being fixed by .DELTA..theta..ltoreq..DELTA..lambda./2d.cos.theta., d being the interreticular distance for the considered reticular planes; orienting the part (11) to obtain the diffraction on a chosen family of reticular planes (30); and collecting and analyzing the X-ray beam near the focusing plane or beyond.

Abstract: A pencil beam of X-rays is scanned over the surface of the body of a person being examined. X-rays that are scattered or reflected from the subject's body are detected by a detector. The signal produced by this scattered X-ray detector in then used to modulate an image display device to produce an image of the subject and any concealed objects carried by the subject. The detector assembly is constructed in a configuration to automatically and uniformly enhance the image edges of low atomic number (low Z) concealed objects to facilitate their detection. A storage means is provided by which previously acquired images can be compared with the present image for analyzing variances in similarities with the present image, and provides means for creating a generic representation of the body being examined while suppressing anatomical features of the subject to minimize invasion of the subject's privacy.

Abstract: A distance between a radiation source and a detector is first set to a first distance and the number of pulses of a .gamma.-ray is detected. Then, the distance between the radiation source and the detector is set to a second distance different from the first distance and the number of .gamma.-ray pulses is detected. A density .rho. of a sample is finally calculated on the basis of a ratio of the two detection pulse numbers which were detected. The radiation source is set on the surface of the sample or in the sample. The sample detector is set on the sample surface. Fundamentally, one radiation source and two detectors are used. In the case of using one radiation source and one detector, either one of them is moved and the number of pulses is detected twice.

Abstract: An X-ray multilayer film reflecting mirror comprises a plurality of substance layers formed on a substrate to be applied to X-rays having a wavelength of 100 .ANG. or less so that a deviation .DELTA. of the film thickness of each layer from a standard value is within a range defined by ##EQU1## where .theta. is the grazing angle of an X-ray being incident and .lambda. is the wavelength of the X-ray. Thus, the multilayer film reflecting mirror having the reflectance which is advantageous in practical use can be stably provided, and a product yield is improved.

Abstract: A double-crystal X-ray monochromator includes entrance and exit crystal assemblies mounted on a support structure to provide full parallelism of the crystals while one crystal is rotated and the other rotated and translated with respect to the first, allowing selection of the wavelength of X-rays to be passed through the monochromator. The monochromator is mounted in an ultra-high vacuum chamber by supports which pass through the vacuum chamber to support the monochromator independently of the vacuum chamber. Bearings supporting the monochromator provide very low friction to linear movement and rotation to allow high precision to be obtained. To compensate for the heating of the entrance crystal due to impingement of high energy X-rays on the crystal, the entrance crystal is cooled using a radiation heat transfer system which provides no physical contact between the radiator connected to the entrance crystal assembly and the heat transfer structure on the vacuum chamber.

Abstract: A system for making an on-line determination of the degree of alloying in galvannealed steel sheets are provided, which includes an X-ray tube for generating X-ray, detectors for detecting the X-ray diffraction intensity of the .zeta. phase and .GAMMA. phase of Fe--Zn intermetallic compounds phases of the galvannealed steel sheet and a detector for detecting the background intensity, all of the detectors being located same plane on the surface of the galvannealed steel sheets, and further includes an arithmetic unit for receiving the outputs of the detectors to compute the X-ray diffraction intensities. Preferably, this system includes a detector for detecting the X-ray diffraction intensity of the .delta..sub.1 phase.

Abstract: A system for analyzing a metal impurity at the surface of a single crystal semiconductor comprising: an incident device for allowing X-ray to be incident, at an incident angle less than a total reflection angle, onto the surface of a wafer in the form of a thin plate comprised of a single crystal semiconductor (e.g., silicon); a wafer fixing/positioning stage wherein when it is assumed that the wafer surface is partitioned by a lattice having an interval d, and that the wavelength of the X-ray from the incident device is .lambda., an angle that the X-ray and the wafer surface form is .theta., and an arbitrary integer is n, the stage is adapted to fix the crystal orientation of the wafer so as to satisfy the condition of "2d sin .theta..noteq.n.lambda.

Abstract: An imaging X-ray microscope having an X-ray radiation source, a condenser for condensing X-rays radiated from the X-ray source on an object, an objective for forming an image of the object by the X-rays transmitted through or diffracted by the object, and an X-ray detector for receiving the image formed by the objective, the objective comprising a Schwarzschild optical system in which a concave mirror with an opening in the center thereof and a convex mirror are coaxially arranged in such a manner that the convex mirror opposes to the opening of the concave mirror, the object-side numerical aperture is at least 0.24, and the following condition is satisfied:(N.A.-0.6)/12.ltoreq.(W.sub.2 -W.sub.1)/f.ltoreq.-0.005where N.A. is the object-side numerical aperture of the Schwarzschild optical system, W.sub.1 is the distance from the object to the center of curvature of the concave mirror, W.sub.

Abstract: Procedure based on X-ray diffraction for measuring the stress state of metals, in particular austenitic steels. In the procedure the detector surface (10) is inclined about an axis (A--A) lying on the surface of the sample (20) being examined which is substantially perpendicular to the direction of the stresses (.sigma..sub.xx) being examined. By means of the detector surface (10) the diameters (2S.sub.ax) of the so-called Debye rings in the direction of the surface being examined are recorded at two or several inclination angles (.psi.). The detector surface (10) has arcuate shape, as viewed in the direction (B--B) at right angles against the inclination axis (A--A), and in the procedure is used such as arcuate detector surface (10) elongated in the direction of said inclination axis (A--A) and narrow enough in the opposite direction that an inclination angle (.psi.) of the detector surface (10) large enough in view of the procedure's implementation is feasible.

Abstract: An X-ray mirror having its layer structure in the sequence of: a substrate having the surface roughness (R.sub.max) of 1,000 .ANG. or below; an intermediate layer of high molecular weight material formed on this substrate and having a surface roughness (R.sub.max) of 100 .ANG. or below; and a thin film formed on this intermediate layer, the X-ray mirror being produced by the process steps of: providing a substrate having a surface roughness (R.sub.max) of 1,000 .ANG. or below; forming on this substrate an intermediate layer of a high molecular weight material by spin-coating with a surface roughness (R.sub.max) of 100 .ANG. or below; and finally forming a thin film on this intermediate layer.

Abstract: An X-ray optical apparatus comprises an X-ray optical system which is capable of projecting an enlarged sample image by soft X-rays and a visible optical system to observe the sample with a visible radiation. To enable simultaneous observation using both optical systems, the systems utilize a common objective zone plate. The objective zone plate includes a base plate having an opening at the center thereof to pass the soft X-rays which have passed through the sample and also having a visible radiation passing section to the outside of the opening. A zone plate is supported centrally on the base plate for converging soft X-rays which have passed through the sample and forming the sample image at a predetermined position. An eyepiece is provided in a position displaced from the X-ray optical axis to enable visual observation of the sample with the light passed through the visible radiation transmitting section of the objective zone plate.

Abstract: A method for estimating the press formability of galvannealed steel sheets provided, wherein: the values found by: ##EQU1## wherein I(.gamma.)=the total X-ray diffraction intensity of the .gamma. phase,I(.GAMMA.)=the total X-ray diffraction intensity of the .GAMMA. phase,I.sub.B (.gamma.)=the background X-ray diffraction intensity of the .gamma. phase,I(.gamma.)-I.sub.B (.gamma.)=the true X-ray diffraction intensity of the .gamma. phase,I(.GAMMA.)-I.sub.B (.GAMMA.)=the true X-ray diffraction intensity of the .GAMMA. phase,.GAMMA.=the .GAMMA. phase of an Fe-Zn intermetallic compound in coating of galvannealed steel sheet, and.gamma.=the .gamma. phase of the intermetallic compound, are used as an index to determine the press formability.

Abstract: An angle detector for determining the orientation of the crystal axes of silicon wafers is disclosed. A portion of an X-ray beam generated by a synchrotron for exposing a wafer is directed onto the back surface of the wafer via a pair of monocrystalline silicon plate diffraction gratings and a slit having a pin-hole for collimating the X-ray. The X-ray beams diffracted by the wafer form a diffraction pattern on a two-dimensional photosensor array, from which pattern the angular position of the wafer is determined. The angle is determined by an image processor, a memory for storing a diffraction pattern corresponding to a predetermined angular position of the wafer, and a comparison of the image processor output and the memory data.

Abstract: An optical system for X rays having a multilayer reflecting mirror which has high reflectances for X rays of different wavelengths. One type of multilayer reflecting mirror is such that the mirror surface of the multilayer reflecting mirror is divided into a plurality of regions, and the regions are provided with multilayers which are such that the reflectance of each multilayer is maximum for X rays of a corresponding wavelength. Another type of multilayer reflecting mirror has a substrate and a plurality of multilayer laid on the substrate, wherein the wavelength of X rays to be reflected with a maximum reflectance varies from multilayer to multilayer. The optical system for X rays according to the present invention is a focusing optical system having a plurality of such multilayer reflecting mirrors and can obtain object images by using X rays of a plurality of wavelengths.

Abstract: A periodic scattering array is used to diffract electromagnetic radiation or massive particles of specific wavelength and energy. A detector sutiable to the radiation or particles is integrated into the surface or bulk of the array. The detector is configured so as to not perturb the diffraction resolution of the array.

Abstract: A thickness determination method for organic films comprises the steps of: irradiating an organic film to be measured with x-rays at a certain angle of incidence, finding an angle of reflection at which the x-ray intensity reaches a peak, and finding the thickness of the film from the angle of this peak.

Abstract: A single crystal orientation identifying and determining apparatus for semiconductor wafers capable of conducting the facial discrimination of a semiconductor wafer and the determination of the crystal orientation thereof, which comprises a first wafer store; an alignment device for aligning the wafer in a predetermined orientation; an X-ray inspection device for inspecting the wafer as to whether or not the inspected face of the wafer is a predetermined particular face, and whether or not the orientation of the principal plane of the wafer is within a predetermined range, said X-ray detector, and X-ray detector, and an X-ray inspection stage; a second wafer store; a first conveyor for conveying the wafer from the first wafer store to the alignment device; a second conveyor for conveying the wafer form the alignment device to the X-ray inspection device, and a third conveyor for conveying the wafer from the X-ray inspection device to an arbitrary address in the second wafer store determined based on the resul

Abstract: A method of treating a substrate having first and second sides with corresponding oppositely facing first and second surfaces, to produce curvature in the first surface. The method includes the steps of removing material, according to a predetermined pattern, from the second side of the substrate, and applying a stress-producing film of material to at least one surface of the substrate to thereby cause the substrate to bend to produce the desired curvature in the first surface.

Abstract: A system for detecting the presence of known materials in a body or container. The system incorporates a gamma or X-ray source for irradiating the body with gamma rays to produce X-ray fluorescence of materials contained therein. A directionally discriminate X-ray detector is positioned to intercept X-rays emitted from the body and is adapted to pass only those X-rays having a predetermined wavelength and incident from a specific direction that are characteristic of a material of interest contained in the body. The detector includes a dislocation free single crystal having substantially parallel input and output surfaces. A second crystal aligned parallel to the first crystal may be disposed at a position offset from the first crystal to receive the X-rays transmitted by the first crystal in order to discriminate between materials fluorescing within the body. In a specific embodiment of the invention, the first detector comprises an elongated crystal which pass X-rays in accordance with the Borrmann effect.