Abstract: Systems and processes for utilizing phosphorus fluoride in place of or in combination with, phosphine as a phosphorus dopant source composition, to reduce buildup of unwanted phosphorus deposits in ion implanter systems. The phosphorus fluoride may comprise PF3 and/or PF5. Phosphorus fluoride and phosphine may be co-flowed to the ion implanter, or each of such phosphorus dopant source materials can be alternatingly and sequentially flowed separately to the ion implanter, to achieve reduction in unwanted buildup of phosphorus solids in the implanter, relative to a corresponding process system utilizing only phosphine as the phosphorus dopant source material.

Abstract: A durable wear-resistant coating consists of an atomically mixed layer on the surface of the head or media which is developed by bombardment of the surface with energetic C ions with optimized parameters. This mixed layer is covered with a hard DLC overcoat. This mixed interlayer is able to strongly bond the overcoat to the head or media substrate and improve the tribological properties of the overcoat. In this method a very thin layer of a carbide former material can be used as an interlayer before bombarding the surface with C ions which provides a composite interlayer containing C and species from interlayer and substrate. This composite interlayer bonds the DLC overact to the ceramic substrate of the head or the metallic substrate of the media. This interlayer by itself is protective enough to protect the head media of the hard drives against wear and corrosion.

Abstract: An ion source is provided. The ion source comprises a first cylindrical anode and a second cylindrical anode. The first cylindrical anode is concentric with the second cylindrical anode. The ion source further comprises an electron source positioned within the first cylindrical anode or the second cylindrical anode.

Abstract: The present invention provides a method for producing a large substrate of single-crystal diamond, including the steps of preparing a plurality of single-crystal diamond layers separated form an identical parent substrate, placing the single-crystal diamond layers in a mosaic pattern on a flat support, and growing a single-crystal diamond by a vapor-phase synthesis method on faces of the single-crystal diamond layers where they have been separated from the parent substrate. According to the method of the invention, a mosaic single-crystal diamond having a large area and good quality can be produced relatively easily.

Abstract: An ion implantation system and method are provided where an ion source generates an ion and a mass analyzer mass analyzes the ion beam. A beam profiling apparatus translates through the ion beam along a profiling plane in a predetermined time, wherein the beam profiling apparatus measures the beam current across a width of the ion beam concurrent with the translation, therein defining a time and position dependent beam current profile of the ion beam. A beam monitoring apparatus is configured to measure the ion beam current at an edge of the ion beam over the predetermined time, therein defining a time dependent ion beam current, and a controller determines a time independent ion beam profile by dividing the time and position dependent beam current profile of the ion beam by the time dependent ion beam current, therein by cancelling fluctuations in ion beam current over the predetermined time.

Abstract: A method for producing a piezoelectric composite substrate having a single-crystal thin film of a piezoelectric material includes an ion-implantation step and a separation step. In the ion-implantation step, He+ ions are implanted into the single-crystal base made of the piezoelectric material to form localized microcavities in a separation layer located inside the single-crystal base and apart from a surface of the single-crystal base. In the separation step, the microcavities formed in the ion-implantation step are subjected to thermal stress to divide the separation layer of the piezoelectric single-crystal base, thereby detaching the single-crystal thin film.

Abstract: A method of forming a near field transducer (NFT) layer, the method including depositing a film of a primary element, the film having a film thickness and a film expanse; and implanting at least one secondary element into the primary element, wherein the NFT layer includes the film of the primary element doped with the at least one secondary element.

Abstract: This invention is to provide a fluoride spray coating covered member having excellent resistance to halogen corrosion and resistance to plasma erosion and displaying identification symbols such as letters, numeric characters, graphic, pattern, firm name, serial number and so on. In the invention, one or more implanting gases selected from fluorine-containing gas, oxygen gas and inert gas are ion-implanted onto a white fluoride spray coating formed on a surface of a substrate, whereby at least a part of the surface of the white fluoride spray coating is changed into a black color to form a black ion-implanted layer.

Abstract: A method for Neutral Beam irradiation derived from gas cluster ion beams and articles produced thereby including optical elements.

Abstract: A system and method for the removal of deposited material from the walls of a plasma chamber is disclosed. The system may have two modes; a normal operating mode and a cleaning mode. During the cleaning mode, the plasma is biased at a higher potential than the walls, thereby causing energetic ions from the plasma to strike the plasma wall, dislodging material previously deposited. This may be achieved through the use of one or more electrodes disposed in the plasma chamber, which are maintained at a first voltage during normal operating mode, and a second, higher voltage, during the cleaning mode.

Abstract: Thin indium-less “optically porous” layers adapted to replace traditional ITO layers are provided herein. A thin metalized film adapted to carry an electrical charge can include a dense pattern of small openings to allow the transmission of light to or from an underlying semiconductor material. The pattern of openings can create a regular or irregular grid pattern of low aspect ratio fine-line metal conductors. Creation of this optically porous metalized film can include the printing of a catalytic precursor material, such as palladium in solution in a pattern on a substrate, drying or curing the catalytic precursor, and the deposition of a thin layer of metal, such as copper on the dried precursor to form the final conductive and optically porous film.

Abstract: Irradiation of a surface of a material with a gas cluster ion beam modifies the wettability of the surface. The wettability may be increased or decreased dependent on the characteristics of the gas cluster ion beam. Improvements in wettability of a surface by the invention exceed those obtained by conventional plasma cleaning or etching. The improvements may be applied to surfaces of medical devices, such as vascular stents for example, and may be used to enable better wetting of medical device surfaces with liquid drugs in preparation for adhesion of the drug to the device surfaces. A mask may be used to limit processing to a portion of the surface. Medical devices formed by using the methods of the invention are disclosed.

Abstract: Provided is a method of manufacturing a magnetic recording medium capable of manufacturing at a high productivity a useful magnetic recording medium having high surface smoothness and excellent head floating characteristics. Such a method of manufacturing a magnetic recording medium includes: forming a magnetic layer on a nonmagnetic substrate; and partially injecting ions into the magnetic layer to modify magnetic characteristics at a location of the magnetic layer where the ions are injected and to form magnetically separated magnetic recording patterns, in which, when partially injecting ions into the magnetic layer, a carbon film is formed on the surface of the magnetic layer, the carbon film is partially thinned by patterning, and ions are partially injected into the magnetic layer through locations where the carbon film is thinned.

Abstract: Apparatus and method for volatilizing a source reagent susceptible to particle generation or presence of particles in the corresponding source reagent vapor, in which such particle generation or presence is suppressed by structural or processing features of the vapor generation system. Such apparatus and method are applicable to liquid and solid source reagents, particularly solid source reagents such as metal halides, e.g., hafnium chloride. The source reagent in one specific implementation is constituted by a porous monolithic bulk form of the source reagent material. The apparatus and method of the invention are usefully employed to provide source reagent vapor for applications such as atomic layer deposition (ALD) and ion implantation.

Abstract: A plasma processing method is provided. The plasma processing method includes using the after-glow of a pulsed power plasma to perform conformal processing. During the afterglow, the equipotential field lines follow the contour of the workpiece surface, allowing ions to be introduced in a variety of incident angles, especially to non-planar surfaces. In another aspect of the disclosure, the platen may be biased positively during the plasma afterglow to attract negative ions toward the workpiece. Various conformal processing steps, such as implantation, etching and deposition may be performed.

Abstract: Samples to be imaged in a Transmission Electron Microscope must be thinned to form a lamella with a thickness of, for example, 20 nm. This is commonly done by sputtering with ions in a charged particle apparatus equipped with a Scanning Electron Microscope (SEM) column, a Focused Ion Beam (FIB) column, and one or more Gas Injection Systems (GISses). A problem that occurs is that a large part of the lamella becomes amorphous due to bombardment by ions, and that ions get implanted in the sample. The invention provides a solution by applying a voltage difference between the capillary of the GIS and the sample, and directing a beam of ions or electrons to the jet of gas. The beam ionizes gas that is accelerated to the sample, where (when using a low voltage between sample and GIS) low energy milling occurs, and thus little sample thickness becomes amorphous.

Abstract: Electromagnetic radiation barriers and waveguides, including barriers and waveguides for light, are disclosed. The barriers and waveguides are fabricated by directing charged particles, for example, ions, into crystalline substrates, for example, single-crystal sapphire substrates, to modify the crystal structure and produce a region of varying refractive index. These substrates are then heated to temperatures greater than 200 degrees C. to stabilize the modified crystal structure and provide the barrier to electromagnetic radiation. Since the treatment stabilizes the crystal structure at elevated temperature, for example, above 500 degrees C. or above 1000 degrees C., the barriers and waveguides disclosed are uniquely adapted for use in detecting conditions in harsh environments, for example, at greater than 200 degrees C. Sensors, systems for using sensors, and methods for fabricating barriers and waveguides are also disclosed.

Abstract: An ion implantation apparatus and a method for ion implantation provides for implanting multiple substrates simultaneously. The different substrates are on corresponding platens within an ion implantation chamber or they may be positioned on separate substrate holders on a single oversized platen. The substrates and platen or platens, are translatable with respect to an ion beam, the individual substrates are rotatable and the position of the substrates relative to one another in the ion implantation chamber are movable. By rotating, translating and repositioning substrates during the ion implantation process, the entirety of all substrates are implanted by an ion beam even when the ion beam has a relatively small footprint and a relatively short scan length, compared to the diameters of the substrates undergoing implantation.

Abstract: Methods of decreasing the dose per pulse implanted into a workpiece disposed in a process chamber are disclosed. According to one embodiment, the plasma is generated by a RF power supply. This RF power supply may have two different modes, a first, referred to as continuous wave mode, where the RF power supply is continuously outputting a voltage. This mode allows creation of the plasma within the process chamber. During the second mode, referred to as pulsed plasma mode, the RF power supply outputs two different power levels. The platen bias voltage may be a more negative value when the lower RF power level is being applied. This pulsed (or multi-setpoint) plasma also assists in reducing dopant deposition on the wafer during the time when CW plasma is on but the bias voltage pulse is in the off-state. In a further embodiment, a delay is introduced between the transition to the pulsed plasma mode and the initiation of the implanting process.

Abstract: In one embodiment, a system for treating a magnetic layer includes an ion generating apparatus for directing an ion beam to the substrate and a magnetic alignment apparatus downstream of the ion generating apparatus and proximate to the substrate and operative to generate a magnetic field that intercepts the substrate in an out of plane orientation with respect to a plane of the substrate. The magnetic alignment apparatus and ion generating apparatus generate a process region in which the ion beam and magnetic field overlap.

Abstract: In one embodiment, a system for treating a magnetic layer includes an ion source to generate an ion beam containing ions of a desired species. The system may also include a magnetic alignment apparatus downstream of the ion source and proximate to the substrate, wherein the magnetic alignment apparatus is operable to apply a magnetic field to the magnetic layer in the substrate along a direction out of plane relative to the magnetic layer.

Abstract: A processing system includes a plasma source chamber to generate a plasma; an extraction assembly adjacent the plasma source chamber having an extraction plate and a beam modifier, the extraction plate defining an extraction plate plane and an aperture to extract ions from the plasma source chamber into an ion beam, the beam modifier adjacent to the extraction plate and operative to adjust an ion beam trajectory angle of the ion beam with respect to a perpendicular to the extraction plate plane; and a neutralizer to receive the ion beam extracted by the extraction assembly, convert the ion beam to a neutral beam and direct the neutral beam towards a substrate, the neutralizer having one or more neutralizer plates arranged at a neutralizer plate angle, the extraction assembly and the neutralizer interoperative to provide an ion beam incident angle of the ion beam with respect to the neutralizer plates.

Abstract: A method for manufacturing a cubic boron nitride (c-BN) thin film includes: applying a pulse-type bias voltage to a substrate; and forming the cubic boron nitride thin film by bombarding the substrate with ions using the pulse-type bias voltage. To control the compressive residual stress of the cubic boron nitride thin film, ON/OFF time ratio of the pulse-type bias voltage may be controlled. The compressive residual stress that is applied to the thin film can be minimized by using the pulse-type voltage as a negative bias voltage applied to the substrate. In addition, the deposition of the c-BN thin film can be performed in a low ion energy region by increasing the ion/neutral particle flux ratio through the control of the ON/OFF time ratio of the pulse-type voltage.

Abstract: Systems and methods for strengthening a sapphire part are described herein. One method may take the form of orienting a first surface of a sapphire member relative to an ion implantation device, selecting an ion implantation concentration and directing ions at the first surface of the sapphire member. The ions are embedded under the first surface to create compressive stress in the sapphire surface.

Abstract: A method includes the steps of receiving a conductor element formed from a plurality of carbon nanotubes; and exposing the conductor element to a controlled amount of a dopant so as to increase the conductance of the conductor element to a desired value, wherein the dopant is one of bromine, iodine, chloroauric acid, hydrochloric acid, hydroiodic acid, nitric acid, and potassium tetrabromoaurate. A method includes the steps of receiving a conductor element formed from a plurality of carbon nanotubes; and exposing the conductor element to a controlled amount of a dopant solution comprising one of chloroauric acid, hydrochloric acid, nitric acid, and potassium tetrabromoaurate, so as to increase the conductance of the conductor element to a desired value.

Abstract: A processing apparatus includes an end station configured to support thereon a workpiece, an ion beam generator and a scanning device. The ion beam generator is configured to generate an ion beam toward the end station. The scanning device is configured to scan the ion beam in a transverse scanning direction. The scanning device is configured to be disposed in a first path of the ion beam toward the end station and out of a second path of the ion beam toward the end station.

Abstract: The present invention relates to a method for manufacturing a magnetic recording medium having magnetically separated magnetic recording patterns, such a magnetic recording medium, and a magnetic recording and reproducing apparatus. The manufacturing method of the present invention includes: forming a continuous recording layer on a nonmagnetic substrate; then forming, on the recording layer, a mask layer including at least one element selected from the element group of Pt, Ru, and Pd in such a manner that part of the recording layer is not masked; and then performing a magnetic characteristic modifying process including exposing the unmasked part of the surface of the recording layer to reactive plasma or reactive ions produced in the reactive plasma to amorphize the part of the recording layer and to modify the magnetic characteristics of the part, so that magnetically separated magnetic recording patterns are formed.

Abstract: The time-averaged ion beam profile of an ion beam for implanting ions on a work piece may be smoothed to reduce noise, spikes, peaks, and the like and to improve dosage uniformity. Auxiliary magnetic field devices, such as electromagnets, may be located along an ion beam path and may be driven by periodic signals to generate a fluctuating magnetic field to smooth the ion beam profile (i.e., beam current density profile). The auxiliary magnetic field devices may be positioned outside the width and height of the ion beam, and may generate a non-uniform fluctuating magnetic field that may be strongest near the center of the ion beam where the highest concentration of ions may be positioned. The fluctuating magnetic field may cause the beam profile shape to change continuously, thereby averaging out noise over time.

Abstract: A method for depositing a film includes depositing an oil repellent film having an enhanced abrasion resistance properties and which is suitable for practical use. A film deposition system, wherein a substrate holder having a substrate holding surface for holding a plurality of substrates is provided rotatably to inside a vacuum container, can include an ion source provided to inside the vacuum container to have a configuration and in an arrangement and/or a direction, by which an ion beam can be irradiated only to a partial region of the substrate holding surface. A deposition source can be provided to inside the vacuum container such that a film deposition material of an oil repellent film can be supplied to the whole region of the substrate holding surface. An operation of the ion source can be stopped before starting operation of the deposition source.

Abstract: An ion implantation system and process, in which the performance and lifetime of the ion source of the ion implantation system are enhanced, by utilizing isotopically enriched dopant materials, or by utilizing dopant materials with supplemental gas(es) effective to provide such enhancement.

Abstract: An ion implanter that introduces a process gas into an ion source, extracts a ribbon-shaped ion beam from the ion source using an extraction electrode system made up of multiple electrodes, and uses the ion beam to irradiate a substrate disposed in a processing chamber during ion implantation processing, and that also introduces a cleaning gas into the ion source and performs cleaning inside said ion source at times other than during ion implantation processing, wherein during the re-initiation of the ion beam upon termination of cleaning, a predetermined voltage is applied to the extraction electrode system and the operating parameters of the ion source are then set to values corresponding to the implantation recipe of the substrate to be processed.

Abstract: Coupling apparatuses and methods of forming coupling apparatuses are provided herein. In an embodiment, a coupling apparatus includes a first component that includes a first metal substrate and a second component that includes a second metal substrate. The first metal substrate includes a titanium-based material. The second component is adapted to contact the first component in shear engagement. A protective coating is disposed on at least one of the first metal substrate or the second metal substrate. The protective coating consists of a first contact layer and, optionally, a diffusion barrier layer disposed between the first contact layer and the corresponding metal substrate. The first contact layer has a thickness of less than or equal to about 5 microns and includes material that is inert to titanium. The first contact layer has a contact surface that is adapted to directly contact an opposing surface in shear engagement.

Abstract: An implant, in particular an intraluminal endoprosthesis, is provided having an implant body containing biodegradable metallic material, preferably iron. To accelerate the degradation, at least a portion of the surface of the implant body has a first coating formed from a composition containing at least one element selected from the group including strontium and calcium. An inexpensive method for manufacturing such an implant is also described.

Abstract: A method for plasma immersion ion processing including providing a hollow substrate having an interior surface defining an interior and a gas feed tube extending through the interior, wherein the gas feed tube is hollow and includes a wall having a plurality of holes defined therein and applying tension to said gas feed tube by affixing a spring to one end of said gas feed tube and said vacuum chamber. The method may also include heating the gas feed tube to a temperature in the range of 50° C. to 650° C.; supplying a precursor gas to the interior of the hollow substrate through the plurality of holes in the gas feed tube and generating a plasma; and applying a negative bias to the hollow substrate relative to the gas feed tube to draw ions from the plasma to the interior surface to form a coating on the interior surface.

Abstract: A variable aperture within an aperture device is used to shape the ion beam before the substrate is implanted by shaped ion beam, especially to finally shape the ion beam in a position right in front of the substrate. Hence, different portions of a substrate, or different substrates, can be implanted respectively by different shaped ion beams without going through using multiple fixed apertures or retuning the ion beam each time. In other words, different implantations may be achieved respectively by customized ion beams without high cost (use multiple fixed aperture devices) and complex operation (retuning the ion beam each time). Moreover, the beam tune process for acquiring a specific ion beam to be implanted may be accelerated, to be faster than using multiple fixed aperture(s) and/or retuning the ion beam each time, because the adjustment of the variable aperture may be achieved simply by mechanical operation.

Abstract: Methods and apparatus for providing conformal shielding are disclosed to provide electromagnetic interference shielding of circuit components mounted on a circuit board. A print mold stencil is provided with one or more conductive shielding walls disposed within the stencil before its application to the circuit board and detachable therefrom, and also configured to encompass the circuit components. In this manner a shielded compartment volume is defined by walls of the print mold stencil and one or more of the conductive shielding walls, and may be easily and quickly applied to the circuit board to encompass the components for shielding. A conformal shielding layer is then formed from a molding material disposed in the shielded compartment volume that encompasses the components, as well as a conductive layer disposed on the outer surface of the material, and coupling of the shielding walls with a ground plane in the circuit board.

Abstract: The present invention relates to a process for making self-patterning substrates comprising the steps of providing electrically conductive traces on a substrate; pre-coating the substrate with at least a layer of complementary reactant electrically resistant reactant formulations; altering the conductivity of complementary reactant formulation selectively upon application of external source of energy and a self-patterning substrate using the said process.

Abstract: A roll-to-roll sputtering method transports a flexible substrate wound on an unwinder roll to a depositing part, forms a deposited film on the flexible substrate, and winds the flexible substrate on a winder roll. The depositing part includes a first depositing part. The first depositing part includes a first sputtering part which deposits a first target material on one surface of the flexible substrate and a heater which is disposed at a side of the other surface of the flexible substrate to heat the flexible substrate.

Abstract: A mass spectrometer includes an Electron Impact (“EI”) or a Chemical Ionization (“CI”) ion source, and the ion source includes a first coating or surface. The first coating or surface is formed of a metallic carbide, a metallic boride, a ceramic or DLC, or an ion-implanted transition metal.

Abstract: A method of manufacturing a sample for an atom probe analysis of the invention is made one going through a step of manufacturing a concave/convex structure in both of a base needle and a transplantation sample piece by an etching working of an FIB, a step of jointing mutual members, and a step of bonding such that the concave/convex structure becomes a mesh form by a deposition working of the FIB.

Abstract: A light guide plate structure includes a light guide plate, a first medium layer, a micro structure, a second medium layer, and a reflection layer. The light guide plate has a light exit surface and a bottom surface opposite to the light exit surface. The first medium layer is formed on the light exit surface. The micro structure is formed on the bottom surface for redirecting light inside the light guide plate to emit from the light exit surface. The second medium layer is formed on the micro structure. The refractive index of the first medium layer and the refractive index of the second medium layer are less than the refractive index of the light guide plate but greater than the refractive index of air. The reflection layer is formed on the second medium layer for reflecting light inside the light guide plate to emit from the light exit surface.

Abstract: Methods of reducing glitch rates within an ion implanter are described. In one embodiment, a plasma-assisted conditioning is performed, wherein the bias voltage to the extraction electrodes is modified so as to inhibit the formation of an ion beam. The power supplied to the plasma generator in the ion source is increased, thereby creating a high density plasma, which is not extracted by the extraction electrodes. This plasma extends from the arc chamber through the extraction aperture. Energetic ions then condition the extraction electrodes. In another embodiment, a plasma-assisted cleaning is performed. In this mode, the extraction voltage applied to the arc chamber body is modulated between two voltages so as to clean both the extraction electrodes and the faceplate of the arc chamber body.

Abstract: A cross section processing method to be performed on a sample by irradiating the sample having a layer or a structure of an organic substance on a surface at a cross section processing position thereof with a focused ion beam using a focused ion beam apparatus includes: a protective film forming step for forming a protective film on the surface of the layer or the structure of the organic substance by irradiating the surface of the sample including the cross section processing position with the focused ion beam under the existence of source gas as the protective film; and a cross section processing step for performing cross section processing by irradiating the cross section processing position formed with the protective film with the focused ion beam at a voltage higher than an accelerating voltage in the protective film forming step.

Abstract: A battery electrode in accordance with various embodiments may include: a substrate including a surface configured to face an ion-carrying electrolyte; and a first diffusivity changing region at a first portion of the surface, wherein the first diffusivity changing region is configured to change diffusion of ions carried by the electrolyte into the substrate, and wherein a second portion of the surface is free from the first diffusivity changing region.

Abstract: Methods of reducing glitch rates within an ion implanter are described. In one embodiment, a plasma-assisted conditioning is performed, wherein the bias voltage to the extraction electrodes is modified so as to inhibit the formation of an ion beam. The power supplied to the plasma generator in the ion source is increased, thereby creating a high density plasma, which is not extracted by the extraction electrodes. This plasma extends from the ion source chamber through the extraction aperture. Energetic ions then condition the extraction electrodes. In another embodiment, a plasma-assisted cleaning is performed. In this mode, the extraction electrodes are moved further from the ion source chamber, and a different source gas is used to create the plasma. In some embodiments, a combination of these modes is used to reduce glitches in the ion implanter.

Abstract: The invention relates to a touch panel. The touch panel includes a plastic film substrate, whose two surfaces are provided in sequence with at least two undercoat layers and a patterned transparent conductive layer and further provided with a patterned metal circuit layer, respectively. The invention also relates to a simplified method for producing a touch panel, in which the conventional lamination process is eliminated, and the touch panel produced thereby has a reduced overall thickness and is free of the conventional image deterioration drawback. Moreover, the method generally pertains to a sheet-by-sheet process and is superior over the conventional roll-to-roll processes in which the thin layers tend to exfoliate due to the occurrence of uneven tension.

Abstract: Systems and methods for uniformly implanting materials on substrates using directed magnetic fields are provided. One such system includes a chamber configured to receive a preselected material and to enclose a first substrate, first and second rotating assemblies configured to facilitate an implantation of the preselected material onto first and second surfaces of the first substrate and including first and second rotating magnet sub-assemblies configured to direct magnetic fields onto the first and second surfaces, and an RF energizer configured to apply RF energy to the first substrate, where the first magnetic field and the second magnetic field combine to form a resultant magnetic field that is substantially parallel along the first surface, and where the implantation of the preselected material onto the first substrate occurs based on a combination of the RF energy and the resultant magnetic field.

Abstract: Electromagnetic radiation barriers and waveguides, including barriers and waveguides for light, are disclosed. The barriers and waveguides are fabricated by directing charged particles, for example, ions, into crystalline substrates, for example, single-crystal sapphire substrates, to modify the crystal structure and produce a region of varying refractive index. These substrates are then heated to temperatures greater than 200 degrees C. to stabilize the modified crystal structure and provide the barrier to electromagnetic radiation. Since the treatment stabilizes the crystal structure at elevated temperature, for example, above 500 degrees C. or above 1000 degrees C., the barriers and waveguides disclosed are uniquely adapted for use in detecting conditions in harsh environments, for example, at greater than 200 degrees C. Sensors, systems for using sensors, and methods for fabricating barriers and waveguides are also disclosed.

Abstract: A process is described for modification of a surface of a substrate by ion bombardment, in which the ions are produced by means of a magnetic field-assisted glow discharge in a process gas. The magnetic field-assisted glow discharge is produced by means of a magnetron having an electrode and at least one magnet for production of the magnetic field. The process gas has at least one electronegative constituent, such that negative ions are produced in the magnetic field-assisted glow discharge, and the negative ions which are produced at the surface of the electrode are accelerated in the direction of the substrate by an electrical voltage applied to the electrode.

Abstract: Provided is a method for reforming a surface of a plastic injection-molded article. The method includes (a) a step of preparing a plastic injection-molded article provided with a front surface having a surface roughness of 20 ?m or less and a rear surface, and (b) a step of implanting ions or electrons into the front surface of the plastic injection-molded article while cooling the rear surface of the plastic injection-molded article.