Abstract: A body made of a ceramic material stabilized by a stabilizing agent, characterized in that the body comprises a surface region extending from the surface of the body to a predetermined depth, the stabilizing agent being enriched in said surface region.

Abstract: A method for generating n-type carriers in a semiconductor is disclosed. The method includes supplying a semiconductor having an atomic radius. Implanting an n-type dopant species into the semiconductor, which n-type dopant species has a dopant atomic radius. Implanting a compensating species into the semiconductor, which compensating species has a compensating atomic radius. Selecting the n-type dopant species and the compensating species in such manner that the size of the semiconductor atomic radius is inbetween the dopant atomic radius and the compensating atomic radius. A further method is disclosed for generating n-type carriers in germanium (Ge). The method includes setting a target concentration for the carriers, implanting a dose of an n-type dopant species into the Ge, and selecting the dose to correspond to a fraction of the target carrier concentration. Thermal annealing the Ge in such manner as to activate the n-type dopant species and to repair a least a portion of the implantation damage.

Abstract: Although dots and servo patterns are made of the same magnetic material, the dots have a relatively low coercive force so as to allow data deletion and rewrite by a magnetic head, while the servo patterns have a high coercive force compared with the coercive force of the dots. The coercive force of the servo patterns is strong enough so as to eliminate the influence of shape magnetic anisotropy.

Abstract: A method of manufacturing a free-standing substrate includes the steps of growing a first thin film on a heterogeneous substrate, forming an ion implantation layer in the first thin film by implanting ions into the first thin film, dividing the first thin film into an upper thin film and a lower thin film with respect to the ion implantation layer, and growing a second thin film on the upper thin film. The free-standing substrate is manufactured without warping or cracking. No additional processes, such as a laser separation process, for separating the free-standing substrate from the heterogeneous substrate are required.

Abstract: The present invention relates to a UV irradiation assisted method of surface modification, which comprises: introducing a functional group L onto the surface of a polymer material P through the photochemical reaction of a photosensitive group X under UV irradiation, wherein the photosensitive group X comprises at least one xanthone unit.

Abstract: A mirror (1) for a microlithography projection exposure apparatus including a substrate (3) and a reflective coating (5). A functional coating (11) between the substrate (3) and the reflective coating (5) has a local form variation (19) for correcting the surface form of the mirror (1), wherein the local form variation (19) is brought about by a local variation in the chemical composition of the functional coating (11) and wherein a thickness of the reflective coating (5) is not changed by the local variation in the chemical composition of the functional coating (11). The local variation in the chemical composition of the functional coating (11) can be brought about by bombardment with particles (15), for example with hydrogen ions.

Abstract: Systems and methods for preparing films using sequential ion implantation, and films formed using same, are provided herein. A structure prepared using ion implantation may include a substrate; an embedded structure having pre-selected characteristics; and a film within or adjacent to the embedded structure and including ions having a perturbed arrangement arising from the presence of the embedded structure. The perturbed arrangement may include the ions being covalently bonded to each other, to the embedded structure, or to the substrate, whereas the ions instead may be free to diffuse through the substrate in the absence of the embedded structure. The embedded structure may inhibit or impede the ions from diffusing through the substrate, such that the ions instead covalently bond to each other, to the embedded structure, or to the substrate. The film may include, for example, diamond-like carbon, graphene, or SiC having a pre-selected phase.

Abstract: A mass spectrometer includes an Electron Impact (“EI”) or a Chemical Ionisation (“CI”) ion source, and the ion source includes a first coating or surface. The first coating or surface is formed of a metallic carbide, a metallic boride, a ceramic or DLC, or an ion-implanted transition metal.

Abstract: Methods of affecting a material's properties through the implantation of ions, such as by using a plasma processing apparatus with a plasma sheath modifier. In this way, properties such as resistance to chemicals, adhesiveness, hydrophobicity, and hydrophilicity, may be affected. These methods can be applied to a variety of technologies. In some cases, ion implantation is used in the manufacture of printer heads to reduce clogging by increasing the materials hydrophobicity. In other embodiments, MEMS and NEMS devices are produced using ion implantation to change the properties of fluid channels and other structures. In addition, ion implantation can be used to affect a material's resistance to chemicals, such as acids.

Abstract: Disclosed are methods of operation to grow, modify, deposit, or dope a layer upon a substrate using a multi-nozzle and skimmer assembly for introducing a process gas mixture, or multiple process gases mixtures, in a gas cluster ion beam (GCIB) system. Also disclosed is a method of forming a shallow trench isolation (STI) structure on a substrate, for example, an SiO2 STI structure, using a multiple nozzle system with two separate gas supplies, for example providing a silicon-containing gas and an oxygen-containing gas.

Abstract: A metal-coated polyimide film is excellent in long-term adhesion reliability, exhibits various dimensional stabilities, and is particularly suitable for FPC, COF and TAB applications. The metal-coated polyimide film comprises a non-thermoplastic polyimide film; and a metal layer being directly formed on one surface or both surfaces of the non-thermoplastic polyimide film without using an adhesive, wherein the non-thermoplastic polyimide film contains a non-thermoplastic polyimide resin having a thermoplastic polyimide block component.

Abstract: A method for applying a vapor deposition coating onto a substrate with a non line of sight or limited line of sight is disclosed. A vapor stream is provided in a chamber that is below atmospheric pressure. The vapor stream is impinged with a working gas that provides a flow that transports the vapor stream. The flow of the working gas is modified with a physical object that directs the flow to achieve a desired coating on the substrate.

Abstract: A hybrid deposition process of CVD and ALD, called NanoLayer Deposition (NLD) is provided. The NLD process is a cyclic sequential deposition process, including introducing a first plurality of precursors to deposit a thin film and introducing a second plurality of precursors to modify the deposited thin film. The deposition using the first set of precursors is not self limiting and is a function of substrate temperature and process time. The second set of precursors modifies the already deposited film characteristics. The second set of precursors can treat the deposited film, including treatments such as modification of film composition and doping or removal of impurities from the deposited film. The second set of precursors can also deposit another layer on the deposited film. The additional layer can react with the existing layer to form a compound layer, or can have minimum reaction to form a nanolaminate film.

Abstract: Methods of forming a graphene material on a surface are presented. A metal material is disposed on a material substrate or material layer and is infused with carbon, for example, by exposing the metal to a carbon-containing vapor. The carbon-containing metal material is annealed to cause graphene to precipitate onto the bottom of the metal material to form a graphene layer between the metal material and the material substrate/material layer and also onto the top and/or sides of the metal material. Graphene material is removed from the top and sides of the metal material and then the metal material is removed, leaving only the graphene layer that was formed on the bottom of the metal material. In some cases graphene material that formed on one or more side of the sides of the metal material is not removed so that a vertical graphene material layer is formed.

Abstract: The present disclosure includes a method for control of a film composition with co-sputter physical vapor deposition. In one implementation, the method includes: positioning first and second PVD guns above a substrate, selecting first and second collimators having first and second sets of physical characteristics, positioning the first and second collimators between the first and second PVD guns and the substrate, sputtering at least one material from the first and second PVD guns through the first and second collimators upon application of a first power and second power, wherein the first PVD gun has a first deposition rate from the first collimator at the first power, and the second PVD gun has a second deposition rate from the second collimator at the second power.

Abstract: A multi-layer drug coated medical device such as for example an expandable vascular drug eluting stent is formed by vacuum pulse spray techniques wherein each layer is irradiated to improve adhesion and/or drug elution properties prior to formation of subsequent layers. Layers may be homogeneous or of diverse drugs. Layers may incorporate a non-polymer elution-retarding material. Layers may alternate with one or more layers of non-polymer elution-retarding materials. Polymer binders and/or matrices are not used in the formation of the coatings, yet the pure drug coatings have good mechanical and elution rate properties. Systems, methods and medical device articles are disclosed.

Abstract: The present invention provides a method for forming a shielding layer on a sensor board. The sensor board includes an antenna array element. The sensor board is integrated into an electronic system. The method includes using a physical vapor deposition process to form the shielding layer on the sensor board to shield the sensor board from an electromagnetic signal generated by the electronic system, wherein the shielding layer and the antenna array element are respectively formed on two opposite surfaces of the sensor board.

Abstract: A method for cleaning a workpiece support that includes using a workpiece that has been coated on its bottom surface with a suitable material is disclosed. This specially coated workpiece is placed on the support, and some time later, it is removed, taking with it particles from the support. In certain embodiments, the workpiece undergoes an ion implantation process to increase its temperature, and to increase the tackiness of the coating on the bottom surface. The material used to coat the bottom can be of variable types, including photoresists, oxides and deposited glasses.

Abstract: A method and system for plasma immersion ion processing including providing a hollow substrate having an interior surface defining an interior and a gas feed tube extending through the interior, wherein the gas feed tube is hollow and includes a wall having a plurality of holes defined therein. The method and system may also include heating the gas feed tube to a temperature in the range of 50° C. to 650° C.; supplying a precursor gas to the interior of the hollow substrate through the plurality of holes in the gas feed tube and generating a plasma; and applying a negative bias to the hollow substrate relative to the gas feed tube to draw ions from the plasma to the interior surface to form a coating on the interior surface.

Abstract: Generally, the present invention relates to patterning techniques for creating nanoscale features on a substrate. The invention offers an improved method over traditional e-beam or photolithographic techniques and uses atomic layer deposition (ALD) chemistries and a source of high-energy ions. These either as focused or a flood of ions facilitate ALD deposition by providing additional energy to the reaction or, more significantly, can form part of the final chemical structure of the ALD coating. Additional embodiments include using ion beam-assisted ALD to deposit a seed layer for subsequent thermal ALD processes, and ion beam-assisted molecular layer deposition chemistries (MLD) for direct patterning of organic and/or inorganic long-chain macromolecules (e.g., polymers, proteins, peptides and polysaccharides). A further embodiment combines both ALD and MLD methods to allow fabrication of unique hybrid metal, semiconductor or dielectric ALD and organic or inorganic MLD films.

Abstract: An ion implantation system and process, in which the performance and lifetime of the ion source of the ion implantation system are enhanced, by utilizing isotopically enriched dopant materials, or by utilizing dopant materials with supplemental gas(es) effective to provide such enhancement.

Abstract: A glitch duration threshold is determined based on an allowable dose uniformity, a number of passes of a workpiece through an ion beam, a translation velocity, and a beam size. A beam dropout checking routine repeatedly measures beam current during implantation. A beam dropout counter is reset each time beam current is sufficient. On a first observation of beam dropout, a counter is incremented and a position of the workpiece is recorded. On each succeeding measurement, the counter is incremented if beam dropout continues, or reset if beam is sufficient. Thus, the counter indicates a length of each dropout in a unit associated with the measurement interval. The implant routine stops only when the counter exceeds the glitch duration threshold and a repair routine is performed, comprising recalculating the glitch duration threshold based on one fewer translations of the workpiece through the beam, and performing the implant routine starting at the stored position.

Abstract: A method of preparing a thin film on a substrate is described. The method comprises forming an ultra-thin hermetic film over a portion of a substrate using a gas cluster ion beam (GCIB), wherein the ultra-thin hermetic film has a thickness less than approximately 5 nm. The method further comprises providing a substrate in a reduced-pressure environment, and generating a GCIB in the reduced-pressure environment from a pressurized gas mixture. A beam acceleration potential and a beam dose are selected to achieve a thickness of the thin film less than about 5 nanometers (nm). The GCIB is accelerated according to the beam acceleration potential, and the accelerated GCIB is irradiated onto at least a portion of the substrate according to the beam dose. By doing so, the thin film is formed on the at least a portion of the substrate to achieve the thickness desired.

Abstract: Direct resistive heating is used to grow nanotubes out of carbon and other materials. A growth-initiated array of nanotubes is provided using a CVD or ion implantation process. These processes use indirect heating to heat the catalysts to initiate growth. Once growth is initiated, an electrical source is connected between the substrate and a plate above the nanotubes to source electrical current through and resistively heat the nanotubes and their catalysts. A material source supplies the heated catalysts with carbon or another material to continue growth of the array of nanotubes. Once direct heating has commenced, the source of indirect heating can be removed or at least reduced. Because direct resistive heating is more efficient than indirect heating the total power consumption is reduced significantly.

Abstract: A coated part is exposed to a gas flow. The gas flow has a characteristic gas flow direction distribution over a surface of the coated part. The coated part has a substrate having a substrate surface and a coating over the substrate surface. The coating comprises at least one coating layer. A first such layer is columnar and has a column boundary direction distribution. The column boundary direction distribution is selected for partial local alignment with the gas flow direction distribution.

Abstract: A process for treating the surface of aluminum or aluminum alloy comprises providing a substrate made of aluminum or aluminum alloy. Then a silane-based hybrid film doped with cerous salt is formed on the substrate by sol-gel process, and a ceramic coating comprising refractory compound is formed on the silane-based hybrid film by physical vapor deposition.

Abstract: Plasma resistant coating materials, plasma resistant coatings and methods of forming such coatings on hardware components. In one embodiment, hardware component is an electrostatic chuck (ESC) and the plasma resistant coating is formed on a surface of the ESC. The plasma resistant coatings are formed by methods other than thermal spraying to provide plasma resistant coatings having advantageous material properties.

Abstract: Method for coating micromechanical components of a micromechanical system, in particular a watch movement, comprising: providing a substrate component to be coated; providing said component with a diamond coating; wherein said diamond coating conductivity is increased in order to reduce dust attraction by the coated component when used in said micromechanical system. Corresponding micromechanical components and systems are also provided.

Abstract: Embodiments of methods for improving electrical leakage performance and minimizing electromigration in semiconductor devices are generally described herein. Other embodiments may be described and claimed.

Abstract: The present invention relates to a ceramic coating and ion beam mixing apparatus for improving corrosion resistance, and a method of reforming an interface between a coating material and a base material. In samples fabricated using the coating and ion beam mixing apparatus, adhesiveness is improved, and the base material is reinforced, thereby improving resistance to thermal stress at high temperatures and high-temperature corrosion resistance of a material to be used in a sulfuric acid decomposition apparatus for producing hydrogen.

Abstract: A method of controlling the drug release rate of a drug coated endovascular stent by depositing a drug material layer on the stent and then modifying the drug material using gas cluster ion beam irradiation to create a carbon matrix with interstices containing the original drug. The rate at which the drug elutes through the interstices can be controlled by processing parameters. Multiple layers may be employed to create time varying release rates.

Abstract: A disclosed surface processing method includes a first processing step, wherein a gas cluster beam is generated from a source material that does not contain nitrogen, and irradiated to a member to be processed, and a second processing step, wherein a nitrogen gas cluster beam is generated and irradiated to the member to be processed.

Abstract: According to one embodiment, a method for manufacturing a master disk for discoid patterned medium having a plurality of sectors arranged in a circumferential direction, the plurality of sectors including a recording data portion and a servo data portion that includes a sector identification region having gaps formed in a linear pattern is provided. An imprint master disk having a linear pattern which is common to the sectors before the gaps are formed in the sector identification region and including at least one pattern of the sector is prepared, imprinting is repeated in the circumferential direction by using the imprint master disk to form patterns of a discoid patterned medium on a substrate, and a sector identification pattern is formed in each sector by forming gaps in the linear pattern of each sector identification region among the patterns formed on the substrate.

Abstract: A generally planar substrate pallet having an front, a back, and pair of sides. The distance between the front and the back and the distance between the sides are significantly longer than the thickness of the substrate pallet. The ratio of vertical deflection of the substrate pallet to the distance between the sides at temperatures used in high temperature processing systems relative to room temperature is less than 1%.

Abstract: A method of fabricating a component is provided. The method includes forming one or more grooves in a surface of a substrate, where the substrate has at least one hollow interior space. Each of the one or more grooves extends at least partially along the substrate surface and has a base and a top. The base is wider than the top, such that each of the one or more grooves comprises a re-entrant shaped groove. The method further includes forming one or more access holes through the base of a respective groove, to connect the groove in fluid communication with respective ones of the hollow interior space(s), and disposing a coating over at least a portion of the substrate surface. The one or more grooves and coating define one or more re-entrant shaped channels for cooling the component. A component with one or more re-entrant shaped channels and a method of coating a component are also provided.

Abstract: A method includes providing a voltage switchable dielectric material having a characteristic voltage, exposing the voltage switchable dielectric material to a source of ions associated with an electrically conductive material, and creating a voltage difference between the source and the voltage switchable dielectric material that is greater than the characteristic voltage. Electrical current is allowed to flow from the voltage switchable dielectric material, and the electrically conductive material is deposited on the voltage switchable dielectric material. A body comprises a voltage switchable dielectric material and a conductive material deposited on the voltage switchable dielectric material using an electrochemical process. In some cases, the conductive material is deposited using electroplating.

Abstract: TiO2-xNx (0.01?x?0.2) nanotubes and a method for preparing the same are disclosed. More particularly, TiO2-xNx (0.01?x?0.2) nanotubes doped with nitrogen atoms by treating TiO2 nanotubes through nitrogen plasma to partially substitute oxygen portion of TiO2 nanotube with nitrogen, and a method for preparing the same are disclosed. The TiO2-xNx (0.01?x?0.2) nanotube of the present invention is prepared by doping nitrogen on a TiO2 nanotube to control an electronic structure and reduce a band gap of the TiO2 nanotube, so that the prepared TiO2-xNx (0.01?x?0.2) nanotube exhibits improved conductivity and extended light absorption range from a UV ray area up to a visible light area, thus having more enhanced applicable performance in optical and/or electrochemical aspects.

Abstract: A method of manufacturing magnetic recording media with a high areal recording density, in which there write bleeding during magnetic recording is eliminated by reducing insofar as possible the coercive force and remanent magnetization in areas between magnetic tracks, is provided. The method of manufacture can produce magnetic recording media 10, in which a magnetic layer 3 is provided on at least one surface of a nonmagnetic substrate 1, and a magnetically separated magnetic pattern 3a is formed in this magnetic layer 3; by implanting atoms into the magnetic layer 3 with a uniform distribution in the thickness direction of the magnetic layer 3, and partially rendering nonmagnetic the magnetic layer 3, nonmagnetic portions 5 which magnetically separate the magnetic pattern 3a are formed.

Abstract: A system and method for maintain a desired degree of platen flatness is disclosed. A laser system is used to measure the flatness of a platen. The temperature of the platen is then varied to achieve the desired level of flatness. In some embodiments, this laser system is only used during a set up period and the resulting desired temperature is then used during normal operation. In other embodiments, a laser system is used to measure the flatness of the platen, even while the workpiece is being processed.

Abstract: A method of fabricating a workpiece is disclosed. A material defining apertures is applied to a workpiece. A species is introduced to the workpiece through the apertures and the material is removed. For example, the material may be evaporated, may form a volatile product with a gas, or may dissolve when exposed to a solvent. The species may be introduced using, for example, ion implantation or gaseous diffusion.

Abstract: The present invention provides a plasma ion beam system that includes multiple gas sources and that can be used for performing multiple operations using different ion species to create or alter submicron features of a work piece. The system preferably uses an inductively coupled, magnetically enhanced ion beam source, suitable in conjunction with probe-forming optics sources to produce ion beams of a wide variety of ions without substantial kinetic energy oscillations induced by the source, thereby permitting formation of a high resolution beam.

Abstract: A physical vapor deposition (PVD) system includes a chamber and a target arranged in a target region of the chamber. A pedestal has a surface for supporting a substrate and is arranged in a substrate region of the chamber. A transfer region is located between the target region and the substrate region. N coaxial coils are arranged in a first plane parallel to the surface of the pedestal and below the pedestal. M coaxial coils are arranged adjacent to the pedestal. N currents flow in a first direction in the N coaxial coils, respectively, and M currents flow in a second direction in the M coaxial coils that is opposite to the first direction, respectively.

Abstract: Provided are battery electrode structures that maintain high mass loadings (i.e., large amounts per unit area) of high capacity active materials in the electrodes without deteriorating their cycling performance. These mass loading levels correspond to capacities per electrode unit area that are suitable for commercial electrodes even though the active materials are kept thin and generally below their fracture limits. A battery electrode structure may include multiple template layers. An initial template layer may include nanostructures attached to a substrate and have a controlled density. This initial layer may be formed using a controlled thickness source material layer provided, for example, on a substantially inert substrate. Additional one or more template layers are then formed over the initial layer resulting in a multilayer template structure with specific characteristics, such as a surface area, thickness, and porosity.

Abstract: A process for forming a ceramic layer comprising a compound of a metal on a deposition surface of a workpiece comprises providing a reactive gas, selecting the amounts of a vapor of the metal and ions of the metal relative to each other, generating the metal vapor, and projecting an ion beam of the metal ions. The metal vapor, the metal ions, and the reactive gas form the ceramic layer with a desired structure. The process may include the step of controlling a deposition surface temperature. In one embodiment, the metal vapor comprises zirconium vapor and the ion beam comprises zirconium ions. The relative amounts of the zirconium vapor and the zirconium ions are selected to form a zirconia ceramic layer on the deposition surface. The zirconia may have multiple crystal phases that are formed according to a predetermined ratio.

Abstract: There is disclosed an apparatus and method for focused electric field enhanced plasma-based ion implantation. The apparatus includes an implantation chamber, a vacuum pump for maintaining the pressure in the implantation chamber at a desired level, a sample holder, means for applying a negative potential to the sample holder, and means for supplying a gaseous or vaporized implantation material. The supplying means takes the form of a feed conduit having an exit opening located in the implantation chamber above the sample holder, and when a negative potential is applied to the sample holder the exit opening of the feed conduit is maintained at a potential that is positive relative to the sample holder.

Abstract: Methods of forming microelectronic structures using multilayer processes are disclosed. The methods comprise the use of a developer-soluble protective layer adjacent the substrate surface in a multilayer stack to protect the substrate during pattern transfer. After etching, the pattern is transferred into the developer-soluble protective layer using a developer instead of etching required by previous methods. Conventional developer-soluble anti-reflective coatings and gap-fill materials can be used to form the protective layer. Custom layers with developer solubility can also be prepared. Microelectronic structures formed by the above processes are also disclosed.

Abstract: The invention discloses a plasma processing apparatus comprising a chamber lid, a chamber body and a support assembly. The chamber body, defining a processing volume for containing a plasma, for supporting the chamber lid. The chamber body is comprised of a chamber sidewall, a bottom wall and a liner assembly. The chamber sidewall and the bottom wall define a processing volume for containing a plasma. The liner assembly, disposed inside the processing volume, comprises of two or more slots formed thereon for providing an axial symmetric RF current path. The support assembly supports a substrate for processing within the chamber body. With the liner assembly with several symmetric slots, the present invention can prevent electromagnetic fields thereof from being azimuthal asymmetry.

Abstract: A plasma process uniformity control apparatus comprises a plasma chamber defined by chamber walls and a plurality of magnetic elements disposed on the outside of the chamber walls. Each of the plurality of magnets is configured to supply a magnetic field directed at respective portions of the plasma inside the chamber to control the uniformity of the plasma directed toward the target substrate.

Abstract: A low friction top coat over a multilayer metal/ceramic bondcoat provides a conductive substrate, such as a rotary tool, with wear resistance and corrosion resistance. The top coat further provides low friction and anti-stickiness as well as high compressive stress. The high compressive stress provided by the top coat protects against degradation of the tool due to abrasion and torsional and cyclic fatigue. Substrate temperature is strictly controlled during the coating process to preserve the bulk properties of the substrate and the coating. The described coating process is particularly useful when applied to shape memory alloys.

Abstract: The present invention provides a process for producing a nitrogen-containing carbon material, comprising a first step of subjecting azulmic acid to a first heat treatment in an oxygen-containing gas atmosphere, thereby preparing a heat-treated product, and a second step of subjecting the heat-treated product to a second heat treatment in an inert gas atmosphere.