Abstract: The present invention provides novel plasma sources useful in the thin film coating arts and methods of using the same. More specifically, the present invention provides novel linear and two dimensional plasma sources that produce linear and two dimensional plasmas, respectively, that are useful for plasma-enhanced chemical vapor deposition. The present invention also provides methods of making thin film coatings and methods of increasing the coating efficiencies of such methods.

Abstract: A chuck and a wafer supported thereon are rotated during a plasma process or a film deposition process to reduce thickness non-uniformity of a film processed or deposited on the wafer.

Abstract: A method including depositing a plasmonic material at a temperature of at least 150° C.; and forming at least a peg of a near field transducer (NFT) from the deposited plasmonic material.

Abstract: A method for controlling in-plane uniformity of a substrate processed by plasma-assisted process in a reactor, includes: supplying a principal gas to a reaction space, and discharging radially the principal gas from the reaction space through an annular duct; and supplying an secondary gas to the reaction space from an area in close proximity to an outer periphery of a susceptor, outside an outer circumference of the substrate as viewed from above, so as to flow at least partially in an inward direction passing the outer circumference of the substrate, reversing the direction of the secondary gas to flow toward the annular duct in a vicinity of the outer circumference of the substrate, and discharging radially the secondary gas together with the principal gas from the reaction space through the annular duct.

Abstract: A vapor deposition reactor may include a first electrode including a first channel and at least one first injection hole connected to the first channel. a second electrode electrically separated from the first electrode, and a power source for applying power between the first electrode and the second electrode to generate plasma from a reactant gas between the first electrode and the second electrode. Also provided is a method for forming thin film using the vapor deposition reactor.

Abstract: A film deposition method using a film deposition apparatus, includes: a film deposition process step in which at least a substrate is mounted on at least one of the circular concave portions and a film is deposited on the substrate; and a particle reducing process step performed before or after the film deposition process step, in which particles in the vacuum chamber are reduced without mounting substrates on the circular concave portions, the particle reducing process step including, a step of supplying a first gas to the vacuum chamber; a step of generating plasma from the first gas by supplying high frequency waves to a plasma generating device provided for the vacuum chamber; and a step of exposing the plurality of circular concave portions, on each of which a substrate is not mounted, to the plasma while rotating the susceptor.

Abstract: A method for reducing structural damage to a substrate resulting from interaction between the substrate and a plasma, the method including the steps of identifying a wavelength at which a spectral radiance of the plasma is at a peak, the wavelength being a function of a temperature of the plasma, preparing a coating capable of imparting to the substrate a threshold electromagnetic reflectivity over a spectral band about the wavelength, and applying the coating to the substrate.

Abstract: For depositing a metallic film, the following steps are repeatedly conducted: a step in which a precoat film is formed on the inside of a chamber; a step in which two or more substrates to be treated are subjected to the deposition of a metallic film thereon by introducing each substrate into the precoated chamber, placing the substrate on the stage, feeding a treating gas while heating the substrate to generate a plasma of the treating gas, and depositing a metallic film on the substrate by plasma CVD; and a step in which after the film deposition on the substrates has been completed, a cleaning gas is introduced into the chamber to conduct dry cleaning. In the step in which two or more substrates to be treated are subjected to the deposition of a metallic film thereon, a conductive film is formed on the stage one or more times in the course of the step.

Abstract: A film forming apparatus includes a first supply unit configured to supply a first reaction gas into the reaction vessel under an environment of a first pressure, a second supply unit configured to supply a second reaction gas into the reaction vessel under an environment of a second pressure lower than the first pressure, a first vacuum exhaust mechanism connected to the reaction vessel through a first exhaust path in order to create the environment of the first pressure within the reaction vessel, a second vacuum exhaust mechanism connected to the reaction vessel through a second exhaust path in order to create the environment of the second pressure, the second vacuum exhaust mechanism being lower in an operation pressure zone than the first vacuum exhaust mechanism, and a switching unit configured to switch exhaust destinations of the reaction vessel between the first path and the second path.

Abstract: A method of fabricating a component for use in a watch includes a step of depositing a first thin film on a wafer wherein the first thin film is adapted to allow light reflected away from the wafer to be indicative of a first color characteristic. The step of depositing the first thin film is performed by using a plasma-enhanced chemical vapor deposition process or a low pressure chemical vapor deposition process. The method may further include a step of fabricating a second color characteristic, including defining a pattern on the first thin film using photolithography, and, processing a region within a boundary of the pattern so that the region is adapted to allow light reflected away from the wafer to be indicative of the second color characteristic. The step of processing the region within the boundary of the pattern includes depositing a metal or a ceramic material within the boundary of the pattern which is indicative of the second color characteristic.

Abstract: Methods and systems for coating articles are described herein. The methods and systems described herein include, but are not limited to, steps for actively or passively controlling the temperature during the coating process, steps for providing intimate contact between the substrate and the support holding the substrate in order to maximize energy transfer, and/or steps for preparing gradient coatings. Methods for depositing high molecular weight polymeric coatings, end-capped polymer coatings, coatings covalently bonded to the substrate or one another, metallic coatings, and/or multilayer coatings are also disclosed. Deposition of coatings can be accelerated and/or improved by applying an electrical potential and/or through the use of inert gases.

Abstract: A break resistant sapphire plate and a corresponding production process. The sapphire plate may include a planar sapphire substrate, and at least one shock absorbing layer arranged on a surface of the substrate. The shock absorbing layer may have a thickness of between 0.1% to 10% of the thickness of the substrate. The production process for producing the sapphire plate may include providing a planar sapphire substrate, and coating at least one surface of the substrate with a shock absorbing layer. The shock absorbing layer may include a layer thickness between 0.1% to 10% of the thickness of the substrate.

Abstract: A film deposition method, in which a film of a reaction product of a first reaction gas, which tends to be adsorbed onto hydroxyl radicals, and a second reaction gas capable of reacting with the first reaction gas is formed on a substrate provided with a concave portion, includes a step of controlling an adsorption distribution of the hydroxyl radicals in a depth direction in the concave portion of the substrate; a step of supplying the first reaction gas on the substrate onto which the hydroxyl radicals are adsorbed; and a step of supplying the second reaction gas on the substrate onto which the first reaction gas is adsorbed.

Abstract: The crystalline semiconductor film is formed following steps that supplying a film formation gas to a second gas diffusion area from a gas introduction port provided in an upper electrode; supplying the film formation gas to a first gas diffusion area from the second gas diffusion area through holes provided in a dispersion plate between the first gas diffusion area and the second gas diffusion area; supplying the film formation gas into a treatment room from the first gas diffusion area through holes in a shower plate between the first gas diffusion area and the treatment room; generating glow discharge plasma by supplying high frequency electricity from an electrode surface of the upper electrode; generating crystal nuclei on a substrate provided over a lower electrode facing the upper electrode; and growing the crystal nuclei. A portion of the dispersion plate which faces the gas introduction port has no hole.

Abstract: The invention relates to a method for functionalizing the surfaces of adhesive closing parts which form, with correspondingly formed adhesive closing parts, an adhesive closure that can be repeatedly opened and closed. The surface energy of the adhesive closing part is modified by means of a proton and/or electron exchanging medium, especially in the form of donors or collectors, using high energy in such a way that the physicochemical properties of the material of the adhesive closing part can be adjusted without a coating and with ageing resistance, by the attachment of functional groups of the exchanging medium to the adhesive closing part material. The invention also relates to a device for carrying out one such method.

Abstract: A method of depositing a coating by vapor deposition. The method including ionizing a process gas, generating a metal vapor and creating a metal flow having a metal atom flow density in the range of 1E14 m?3 to 1E24 m?3. The method also includes providing a thermionic emission from a thermionic ionizing grid including thermionic filaments, wherein said ionizing filament grid is at least partially located within said region having a metal atom flow density in the range of 1E14 m?3 to 1E24 m?3, and coating a substrate with the metal vapor.

Abstract: A method for forming a thin film using radicals generated by plasma may include generating radicals of a reactant precursor using plasma; forming a first thin film on a substrate by exposing the substrate to a mixture of the radicals of the reactant precursor and a source precursor; exposing the substrate to the source precursor; and forming a second thin film on the substrate by exposing the substrate to the mixture of the radicals of the reactant precursor and the source precursor. Since the substrate is exposed to the source precursor between the formation of the first thin film and the formation of the second thin film, the rate of deposition may be improved.

Abstract: The present invention relates to a method for producing a superamphiphobic coating on a substrate, said method comprising the steps of a) providing a substrate, b) generating a plasma in a treatment space, under atmospheric pressure, using a dielectric barrier discharge, by supplying a plasma gas (6) between at least a first and a second electrode (2 and 3) connected to alternating current (AC) power means (7), said electrodes (2 and 3) defining said treatment space (5), c) introducing into said plasma a coating forming material selected from the group consisting in fluoro-acrylate monomers, fluoro-alkyl acrylatemonomers,fluoro-methacrylate monomers, fluoro-alkyl methacrylatemonomers, fluroro-silane, monomers or a combination thereof, d) exposing at least a part of the surface of said substrate to said plasma comprising said coating forming material in multiple successive passes within said treatment space by moving said substrate, said at least first and/or second electrode (2, 3), or both, without stopping,

Abstract: In a system and method of depositing material on a substrate, a shadow mask, including one or more apertures therethrough, in intimate contact with the substrate is provided inside of a chamber or reactor. Material ejected from a solid target material is deposited on one or more portions of the substrate after passage through the one or more apertures of the shadow mask. Desirably, a target-to-substrate distance is within a mean free path length at a specified deposition pressure. Alternatively, an electric field acts on a process gas to create a plasma that includes ionized atoms or molecules of the material that are deposited on one or more portions of the substrate after passage through the one or more apertures of the shadow mask.

Abstract: A method of doping a non-planar surface or a surface of a substrate subject to poor view factors is provided. The processing chamber comprises a window, walls, and a bottom of the processing chamber with oxygen-containing material, the processing chamber configured to supply oxygen radicals as an additive to doping materials. One or more quartz pieces are placed inside the processing chamber, where a magnet proximate to the processing chamber is configured to create a local magnetron plasma inside the processing chamber. Process gas containing an inert gas, sublimated doping materials, and optionally oxygen gas is flowed into the processing chamber; energy is applied to the process gas, generating a doping plasma used to expose a portion of the substrate surface while controlling operating variables to achieve target uniformity of dopant concentration, sheet resistance, degree of dopant clustering, and erosion of features on the substrate.

Abstract: There is provided a plasma processing apparatus which can improve density uniformity of plasma excited by a high frequency wave as in the VHF frequency band and reduce production costs by downsizing for a substrate having a large size. The plasma processing apparatus includes a waveguide member defining a waveguide, first and second electrodes disposed so as to face a plasma formation space, defining the waveguide in cooperation with the waveguide member, and electrically connected to the waveguide member; a coaxial tube supplying electromagnetic energy into the waveguide; a dielectric plate disposed in the waveguide and extending in a longitudinal direction; and first and second conductors disposed, in the waveguide, on at least one side of the waveguide in a width direction with respect to the dielectric plate, extending along the dielectric plate, and electrically connected to the first and second electrodes.

Abstract: Provided is an atomic layer deposition apparatus including: a sealable deposition chamber; a holding portion configured to hold a substrate including a deposition surface in the deposition chamber; a supply mechanism that includes an introduction portion connected to a gas supply source that supplies gas and is configured to supply gas introduced into the introduction portion to the deposition chamber from a position opposing the deposition surface; and an exhaust mechanism that includes an exhaust portion connected to an exhaust mechanism capable of exhausting gas and is configured to exhaust the deposition chamber from a position opposing the deposition surface.

Abstract: A method of preparing or operating a mass spectrometer vacuum interface comprising a skimmer apparatus having a skimmer aperture and an internal surface of the skimmer apparatus, comprising disposing an adsorbent or getter material on the internal surface. The internal surface has a deposition region where matter from plasma flows may be deposited and the material is disposed on part or all of the deposition region. The disposing step may be performed before a first use and/or intermittently, especially to refresh a previously disposed material. Providing such material serves to trap or collect deposition matter which might anyway be deposited but in such a way that subsequent liberation of that matter is prevented or at least reduced.

Abstract: There are provided a food container having improved oxygen barrier properties and a manufacturing method thereof. The food container includes a container made of a plastic material, a buffer thin layer formed on a surface of the container and having a thickness of 5 to 30 nm, and an oxygen barrier thin layer formed on the buffer thin layer. Accordingly, it is possible to provide a food container and a manufacturing method thereof, which can remarkably improve oxygen barrier properties by depositing, using a plasma method, an oxygen barrier thin layer on a porous plastic container having low surface energy without breaking the oxygen barrier thin layer.

Abstract: A plasma processing apparatus includes a stock unit, a processing unit, and an alignment chamber. The stock unit supplies and collects a conveyable tray formed with a plurality of housing holes in each of which a wafer is housed. In the processing chamber, plasma processing is executed on the wafers housed in the tray supplied from the stock unit. The alignment chamber is provided with a rotating table on which the tray before being subjected to the plasma processing is set to perform positioning of the wafers on the rotating table. A housing state determination unit of a control device determines whether or not the wafer is misaligned with respect the housing hole of the tray based on a height detected by height detecting sensors.

Abstract: A vapor deposition apparatus and method for efficiently performing a deposition process to form a thin film with improved characteristics on a substrate, and a method of manufacturing an organic light-emitting display apparatus. The vapor deposition apparatus includes a chamber including an exhaust port; a stage disposed in the chamber, and including a mounting surface on which the substrate is to be disposed; an injection portion including at least one injection opening through which a gas is injected in a direction parallel with a surface of the substrate on which the thin film is to be formed; and a plasma generator disposed apart from the substrate to face the substrate.

Abstract: Disclosed herein is a method for producing a plastic container coated with a thin film that is excellent in gas barrier properties, film coloration and film adhesiveness without using an external electrode having a special shape while suppressing deposition of foreign matters such as carbon powders.

Abstract: A method of producing a parylene coating on at least one surface of at least one component includes providing a first gas containing parylene monomers and depositing the parylene monomers on the at least one surface of the component by supplying the first gas containing the parylene monomers by a first nozzle to the at least one surface, wherein the component is disposed in an environment at atmospheric pressure.

Abstract: Systems and methods are delineated which, among other things, are for depositing a film on a substrate that is within a reaction chamber. In an exemplary method, the method may comprise applying an atomic layer deposition cycle to the substrate, wherein the cycle may comprise exposing the substrate to a precursor gas for a precursor pulse interval and then removing the precursor gas thereafter, and exposing the substrate to an oxidizer comprising an oxidant gas and a nitrogen-containing species gas for an oxidation pulse interval and then removing the oxidizer thereafter. Aspects of the present invention utilize molecular and excited nitrogen-oxygen radical/ionic species in possible further combination with oxidizers such as ozone. Embodiments of the present invention also include electronic components and systems that include devices fabricated with methods consistent with the present invention.

Abstract: A system for depositing a thin film on a flexible substrate comprises a plurality of processing zones spaced apart by an isolation zone, a plasma generator for generating a plasma region proximal to a pathway along which the substrate travels, and a substrate transport mechanism for guiding the substrate back and forth between the processing zones so that the substrate is transported past and exposed to the plasma region when the system is in use.

Abstract: A plasma-processing chamber including pulsed gas injection orifices/nozzles utilized in combination with continuous flow shower head injection orifices is described. The continuous flow shower head injection orifices introduce a continuous flow of gas while the pulsed gas injection orifices/nozzles cyclically inject a high-pressure gas into the chamber. In one embodiment, a central computer may monitor and control pressure measurement devices and utilize the measurements to adjust processing parameters (e.g. pulse duration, pulse repetition rate, and the pulse mass flow rate of processing gases).

Abstract: Performing atomic layer deposition (ALD) using radicals of a mixture of nitrogen compounds to increase the deposition rate of a layer deposited on a substrate. A mixture of nitrogen compound gases is injected into a radical reactor. Plasma of the compound gas is generated by applying voltage across two electrodes in the radical reactor to generate radicals of the nitrogen compound gases. The radicals are injected onto the surface of a substrate previously injected with source precursor. The radicals function as a reactant precursor and deposit a layer of material on the substrate.

Abstract: An asymmetrically grounded susceptor used in a plasma processing chamber for chemical vapor deposition onto large rectangular panels supported on and grounded by the susceptor. A plurality of grounding straps are connected between the periphery of the susceptor to the grounded vacuum chamber to shorten the grounding paths for RF electrons. Flexible straps allow the susceptor to vertically move. The straps provide a conductance to ground which is asymmetric around the periphery. The straps may be evenly spaced but have different thicknesses or different shapes or be removed from available grounding point and hence provide different RF conductances. The asymmetry is selected to improve the deposition uniformity and other qualities of the PECVD deposited film.

Abstract: The present invention relates to a method of preparing a material having a superhydrophobic region and a hydrophobic region, and more particularly to a method of preparing a material having a superhydrophobic region and a hydrophobic region by preparing a superhydrophobic surface body and hydrolyzing one surface of the prepared superhydrophobic surface body using a strong base. The preparation method according to the invention is simpler than conventional preparation methods and is capable of preparing a material having opposite surface characteristics at low costs.

Abstract: There is provided an antireflection coating having a band ranging from visible light to infrared (wavelength range from 400 nm to 1600 nm). The antireflection coating includes twelve layers formed by depositing a high refractive index material and a low refractive index material having a refractive index lower than the high refractive index material alternately and depositing an ultra-low refractive index material having a refractive index lower than the low refractive index material as the outermost layer. The first, third, fifth, seventh, ninth, and eleventh layers are formed by depositing the high refractive index material, the second, fourth, sixth, eighth, and tenth layers are formed by depositing the low refractive index material, and the twelfth layer is formed by depositing the ultra-low refractive index material, where the layers are numbered in order from the substrate side.

Abstract: A method and a device for direct printing onto plastic containers, where an intermediate layer is in a first step using a first device applied onto the container to be printed and the container is in a second step using a second device printed in certain areas, and the intermediate layer enters into a bond with the container and the print layer that is insoluble in aqueous solutions having a pH value between 3 and 10, and is very soluble in aqueous solutions having a pH value in a range less than 3 and/or greater than 10; and a recycling method for a plastic container having an intermediate layer applied.

Abstract: Specialty ceramic materials which resist corrosion/erosion under semiconductor processing conditions which employ a corrosive/erosive plasma. The corrosive plasma may be a halogen-containing plasma. The specialty ceramic materials have been modified to provide a controlled electrical resistivity which suppresses plasma arcing potential.

Abstract: A centralizer for a tubular body in a wellbore is provided herein. The centralizer includes an elongated body having a bore there through. The bore is dimensioned to receive a tubular body. The elongated body has an inner surface and an outer surface. The centralizer also has a coating deposited on at least the inner surface. The coating is designed to provide a reduced coefficient of friction on the surface. A method of fabricating a centralizer is also provided herein.

Abstract: Methods and systems are provided for fabricating polymer-based imprint lithography templates having thin metallic or oxide coated patterning surfaces. Such templates show enhanced fluid spreading and filling (even in absence of purging gases), good release properties, and longevity of use. Methods and systems for fabricating oxide coated versions, in particular, can be performed under atmospheric pressure conditions, allowing for lower cost processing and enhanced throughput.

Abstract: Ionisation device, comprising a linear hollow cathode device which has hollow cathode electrodes, defining a main hollow cathode electrode gap in which a magnetic field created by means of magnetic elements is confined; and a gas distribution element in which a gas distribution cavity is arranged providing uniform gas distribution on the main hollow cathode electrode gap with suitable powering which in a substantially vacuum environment would be able to produce a substantially linear plasma discharge which is spatially extended by the relative position of the hollow cathode electrodes and an anode element wherein this extended plasma allowing a wide interaction with particles travelling from a coating material source ionised in order to produce a coating or a plasma treatment on a substrate surface.

Abstract: High rate deposition methods comprise depositing a powder coating from a product flow. The product flow results from a chemical reaction within the flow. Some of the powder coatings consolidate under appropriate conditions into an optical coating. The substrate can have a first optical coating onto which the powder coating is placed. The resulting optical coating following consolidation can have a large index-of-refraction difference with the underlying first optical coating, high thickness and index-of-refraction uniformity across the substrate and high thickness and index-of-refraction uniformity between coatings formed on different substrates under equivalent conditions. In some embodiments, the deposition can result in a powder coating of at least about 100 nm in no more than about 30 minutes with a substrate having a surface area of at least about 25 square centimeters.

Abstract: An apparatus for optical coupling comprises a substrate, a first waveguide formed on the substrate and includes a grating structure directing light in a first direction, and a second waveguide formed on the first waveguide and including an angled portion directing the light in a second direction different from the first direction.

Abstract: An isothermal, low pressure-based process of depositing material within a substrate has been developed and results in creating an extremely narrow reaction zone within which a more uniform and efficient deposition will occur. Sets of isothermal plasma operating conditions have been found that create a narrow deposition zone, assuring that the deposited material is clear glass rather than soot particles. The chemical delivery system, in one arrangement, utilizes rods of solid phase source material (which may otherwise be difficult to obtain in gaseous form). The operating conditions are selected such that the hot plasma does not transfer a substantial amount of heat to the substrate tube, where the presence of such heat has been found to result in vaporizing the reactant material (creating soot) and developing hot spots.

Abstract: A method of bonding an adherent to a substrate, wherein a primer is applied to the substrate by plasma deposition and the adherent is bonded to the primer treated surface of the substrate, and the primer contains functional groups which chemically bond to functional groups in the adherent.

Abstract: A method of enhancing the flowability of a powder. The powder is defined by a plurality of particles having an initial level of inter-particle forces between each particle. The method comprises: treating the powder, wherein the level of inter-particle forces between each particle is substantially decreased from the initial level; fluidizing the treated powder; flowing the treated powder into a plasma arc chamber; the plasma arc chamber generating a plasma arc; and the plasma arc chamber operating on the treated powder using the generated plasma arc. Preferably, the inter-particle forces are decreased by coating the particles with an organic surfactant.

Abstract: Embodiments provide a plasma processing apparatus, substrate support assembly, and method of controlling a plasma process. The apparatus and substrate support assembly include a substrate support pedestal, a tuning assembly that includes a tuning electrode that is disposed in the pedestal and electrically coupled to a radio frequency (RF) tuner, and a heating assembly that includes one or more heating elements disposed within the pedestal for controlling a temperature profile of the substrate, where at least one of the heating elements is electrically coupled to an RF filter circuit that includes a first inductor configured in parallel with a formed capacitance of the first inductor to ground. The high impedance of the RF filters can be achieved by tuning the resonance of the RF filter circuit, which results in less RF leakage and better substrate processing results.

Abstract: The invention relates to an apparatus for surface processing on a substrate, for example for applying a coating to the substrate or for removing a coating from the substrate, wherein the apparatus comprises: a chamber enclosing an interior and serving for arranging the substrate for the surface processing, a process gas analyser for detecting at least one gaseous constituent of a residual gas atmosphere formed in the interior, wherein the process gas analyser comprises an ion trap for storing the gaseous constituent to be detected, and an ionization device for ionizing the gaseous constituent. The invention also relates to an associated method for monitoring surface processing on a substrate.

Abstract: Methods and compositions for the deposition of a film on a substrate. In general, the disclosed compositions and methods utilize a precursor containing calcium or strontium.

Abstract: Provided herein are substrates useful for surface-enhanced Raman spectroscopy (SERS), as well as methods of making substrates. The substrates comprise a support element; a nanoparticulate layer; a SERS-active layer in contact with said nanoparticulate layer; and optionally, an immobilizing layer disposed between said nanoparticulate layer and said support element; wherein if the optional immobilizing layer is not present, the nanoparticulate layer is thermally bonded to the support element; and if said optional immobilizing layer is present, said nanoparticulate layer thermally bonded to said immobilizing layer, and optionally, further thermally bonded to said support element. In addition, methods of making the substrates, along with methods of detecting and increasing a Raman signal using the substrates, are described herein.

Abstract: The present invention provides a film with a transparent electroconductive membrane including a transparent base material and a transparent electroconductive membrane. The transparent electroconductive membrane has on its surface crystalline secondary particles having an average particle diameter of 0.1 to 1 ?m in an amount of 1 to 100 particles/?m2. A substrate for a display, a display, a liquid crystal display device, and an organic EL element using the film with a transparent electroconductive membrane are also provided.