Abstract: A method includes flowing reactant gases into a process chamber. Plasma having a first power level is supplied using a plasma source. The process chamber is dosed with the precursor. The first power level is sufficient to enhance adsorption of the precursor on a surface of the substrate and is insufficient to decompose the precursor that is adsorbed. After a first predetermined period, the method includes removing a portion of the precursor that does not adsorb onto the substrate. The precursor that is adsorbed is activated using plasma having a second power level using the plasma source. The second power level is greater than the first power level and is sufficient to decompose the precursor.

Abstract: A plasma processing apparatus including: a chamber configured to provide a space for processing a substrate; a substrate stage configured to support the substrate within the chamber and including a first electrode, the first electrode configured to receive a first radio frequency signal; a second electrode disposed on an upper portion of the chamber to face the first electrode, the second electrode configured to receive a second radio frequency signal; a gas supply unit configured to supply a process gas onto the substrate within the chamber; and a thermal control unit configured to circulate a heat transfer medium through a first fluid passage provided in the first electrode and a second fluid passage provided in the second electrode to maintain the first and second electrodes at the same temperature.

Abstract: A method of operating a mass spectrometer vacuum interface comprising a skimmer apparatus having a skimmer aperture and downstream ion extraction optics. An expanding plasma is skimmed through the skimmer aperture. Within the skimmer apparatus, a portion of the skimmed plasma adjacent the skimmer apparatus is separated from the remainder of the skimmed plasma by providing means to prevent, inhibit or impede, the separated portion from reaching the extraction optics while allowing the remainder to expand towards the extraction optics. This allows removal of ions liberated from deposition matter on the skimmer apparatus surface, thereby discriminating against such ions, and offering reduced memory effects. The remainder of the plasma can expand towards the extraction optics, so interaction and mixing between the boundary layer and the remainder of the plasma can be reduced or minimized.

Abstract: A method of producing a glass substrate having a first layer formed on a surface of the substrate by low-temperature CVD includes preparing the glass substrate and forming the first layer on the glass substrate by the low-temperature CVD. In the glass substrate after forming the first layer, an integrated value after a baseline correction in a wavenumber range of 2600 cm?1 to 3800 cm?1 in a peak due to OH groups obtained by an FTIR measurement on the first layer is 9.0 or less, and the C content of the first layer is 1.64 at % or less.

Abstract: A process for the simultaneous deposition of films onto both sides of a substrate (2), which comprises in particular introducing a substrate (2) into a reaction chamber (106, 206) or making said substrate run therethrough, in which chamber at least two electrodes (110, 210) are placed. At least one dielectric barrier (14, 114) is placed between these at least two electrodes (110, 210). An adjustable inductor (L) is placed in the secondary circuit of the transformer in parallel with the circuit comprising the at least two electrodes. A high-frequency electrical voltage is generated, said voltage being such that it generates a filamentary plasma (112, 212) on each side of the substrate between the at least two electrodes (110, 210).

Abstract: Provided is a new catalyst capable of removing carbon monoxide economically without adding particular reaction gas externally. Also provided are a process for producing and an apparatus using such a catalyst. Impregnation of a Ni—Al composite oxide precursor of a nonstoichiometric composition prepared by the solution-spray plasma technique with a ruthenium salt to be supported and performing reduction treatment allows CO methanation reaction to selectively proceed even in the high-temperature range in which CO2 methanation reaction and reverse water-gas-shift reaction proceed preferentially with conventional catalysts. Selective CO methanation reaction occurs reproducibly with another Ni—Al composite oxide precursor or an additive metallic species.

Abstract: An apparatus for vacuum plasma processing materials in a vacuum chamber composed primarily of carbonaceous polymer. The various components of the vacuum chamber can be formed by traditional polymer assembly techniques. The polymers may be electrically non-conductive to allow external placement of electrodes for either capacitive coupling, inductive coupling, or both.

Abstract: A method for forming a Ti-containing film on a substrate by plasma-enhanced atomic layer deposition (PEALD) using tetrakis(dimethylamino)titanium (TDMAT) or tetrakis(diethylamino)titanium (TDEAT), includes: introducing TDMAT and/or TDEAT in a pulse to a reaction space where a substrate is placed; continuously introducing a NH3-free reactant gas to the reaction space; applying RF power in a pulse to the reaction space wherein the pulse of TDMAT and/or TDEAT and the pulse of RF power do not overlap; and repeating the above steps to deposit a Ti-containing film on the substrate.

Abstract: A method for manufacturing a drug-releasing stent is provided. The method includes providing a titanium precursor, a carrier gas and a reactant gas in a plasma vacuum chamber, and generating a plasma for 1 to 6 hours to form a titanium oxide thin film on the surface of a stent. The method further includes providing steam or oxygen and hydrogen in the plasma vacuum chamber and generating a low-temperature plasma for 10 minutes to 2 hours to modify the surface of the titanium oxide thin film. The method further includes reacting the titanium oxide thin film of the stent with a drug in an acidic solution and under an inert gas atmosphere at room temperature to 100° C. for 30 minutes to 4 hours to attach the drug.

Abstract: A wear resistant coating and a method of forming a wear resistant coating on a substrate. The method includes applying a plurality of round particles to the substrate, each of the plurality of round particles including a round outer layer encapsulating a wear resistant element. The method comprises applying a wear resistant coating binder to the substrate. The method includes heating the plurality of round particles and the wear resistant coating binder.

Abstract: A method for fabricating surface tethered chiroptical switches that constitute polymer chains bearing chromophoric functional groups with the ability to undergo geometrical re-alignment upon irradiation with polarized light to yield a measurable chiral anisotropy, by formation of a layer on a substrate by deposition of a compound containing at least one functional group and attachment of chiro-optical molecule to said functional group.

Abstract: A stacked substrate is produced using an apparatus including an injector head device. Production includes the steps of providing an injector head device comprising a gas bearing pressure arrangement and injecting bearing gas against opposite substrate surfaces, to balance the substrate without support in a conveying plane in the injector head device. The following steps are performed iteratively: contacting opposite substrate surfaces with a first precursor gas; and with a second precursor gas, first and second precursor gases supplied in first and second deposition spaces are arranged opposite and facing respective sides of the substrate; establishing relative motion between the deposition space and the substrate in the conveying plane; and providing at least one of a reactant gas, plasma, laser-generated radiation, and/or ultraviolet radiation, in any or both reactant spaces for reacting any of the first and second precursor gas after deposition on at least part of the substrate surface.

Abstract: A vapor deposition apparatus efficiently performs a deposition process to form a thin film with improved characteristics on a substrate, and a method manufactures an organic light-emitting display apparatus by using such vapor deposition apparatus. The vapor deposition apparatus includes a body including an upper member and a lateral member coupled to the upper member; a receiving portion disposed to face one side of the lateral member; a stage disposed in the receiving portion and supporting the substrate; a plurality of first injection portions disposed in the lateral member and injecting at least one gas into a space between the lateral member and the upper member; a second injection portion disposed in the upper member and injecting at least one gas into the space between the lateral member and the upper member; and a plasma generating portion including a coil and a power source connected to the coil.

Abstract: When manufacturing a functional film to be formed by using a plasma CVD method while transporting an elongated substrate in a longitudinal direction, an object is to provide a manufacturing method which can prevent a product or the inside of a film forming system from being contaminated during the exposure to air after the film forming is stopped, and can improve productivity and a product quality. The object is achieved by introducing a gas for the exposure to the air into the film forming system after hindering a surface of a film forming electrode from coming into contact with the air inside the film forming system.

Abstract: A method for forming an oxide film by plasma-assisted processing includes: (i) supplying a precursor reactive to none of oxygen, CxOy, and NxOy (x and y are integers) without a plasma to a reaction space wherein a substrate is placed; (ii) exposing the precursor to a plasma of CxOy and/or NxOy in the reaction space; and (iii) forming an oxide film on the substrate using the precursor and the plasma.

Abstract: Disclosed is a nanoparticle generating unit, a nanoparticle coating unit, and a core-shell nanoparticle collecting unit are connected to link and continuously process generation of nanoparticles and a coating and collecting process. The nanoparticle coating unit is formed of a porous material or in a grid structure and a moving speed of the nanoparticles can be decreased using a speed adjustment member installed at a process passage of a coating chamber.

Abstract: There is provided a multilayer ceramic capacitor including a ceramic body including a plurality of dielectric layers, a plurality of first and second internal electrodes disposed in the ceramic body to be alternately exposed to first and second end surfaces of the ceramic body, having the dielectric layer therebetween, first and second electrode layers electrically connected to the first and second internal electrodes, respectively, a conductive resin layer formed on the first and second electrode layers and in regions of the ceramic body adjacent to the first and second electrode layers, and a coating layer formed between a portion of an outer surface of the ceramic body on which the conductive resin layer is to be formed and the conductive resin layer.

Abstract: A device used for plasma-enhanced coating of a container, e.g. a plastic bottle, and/or a container blank, e.g. a container preform, with at least one high-frequency source, at least one gas feed for feeding process gas, and at least one plasma source, e.g. a plasma nozzle. The plasma source has an inner electrode surrounded by a nozzle tube, the plasma source is adapted to be introduced in a container to be coated and configured such that it is able to generate a plasma under ambient pressure, e.g. in a pressure range of 800 to 1,200 hPA, and the plasma can be discharged from a nozzle tube end. The temperature of the generated plasma lies within the range of the ambient temperature, e.g. between 10 and 50 ° C. The nozzle tube of the plasma source includes a longitudinal nozzle tube element and a lateral nozzle tube element projecting laterally from the longitudinal nozzle tube element (201). Plasma is dischargeable through the lateral nozzle tube end.

Abstract: A method and apparatus for depositing a film on a biological substrate are provided. A plasma generation device includes a dielectric conduit and a high voltage electrode. The plasma generation device is placed in proximity to the biological substrate and a gas supply that includes a precursor material is directed through the dielectric conduit. An electric field generated by the potential difference between the high voltage electrode and the biological substrate ionizes at least a portion of the gas supply and causes plasma to emanate from the dielectric conduit and contact the biological substrate. The plasma induces a reaction of the precursor material to form a film that is deposited on the biological substrate.

Abstract: A system for processing a substrate includes a plasma chamber to generate a plasma therein. The system also includes a process chamber to house the substrate, where the process chamber is adjacent the plasma chamber. The system also includes a rotatable extraction electrode disposed between the plasma chamber and substrate, where the rotatable extraction electrode is configured to extract an ion beam from the plasma, and configured to scan the ion beam over the substrate without movement of the substrate by rotation about an extraction electrode axis.

Abstract: Systems and methods for plasma doping microfeature workpieces are disclosed herein. In one embodiment, a method of implanting boron ions into a region of a workpiece includes generating a plasma in a chamber, selectively applying a pulsed electrical potential to the workpiece with a duty cycle of between approximately 20 percent and approximately 50 percent, and implanting an ion specie into the region of the workpiece.

Abstract: A method of forming a metalloid-containing material comprises the step of preparing a hydrometalloid compound in a low volume on-demand reactor. The method further comprises the step of feeding the hydrometalloid compound prepared in the microreactor to a deposition apparatus. Additionally, the method comprises the step of forming the metalloid-containing material from the hydrometalloid compound via the deposition apparatus. A deposition system for forming the metalloid-containing material comprises at least one low volume on-demand reactor coupled to and in fluid communication with a deposition apparatus.

Abstract: Methods for applying a hydrophobic coating to various components within a computing device are disclosed. More specifically, a hydrophobic coating can be applied by a plasma assisted chemical vapor deposition (PACVD) process to a fully assembled circuit board. Frequently, a fully assembled circuit board can have various components such as electromagnetic interference (EMI) shields which cover water sensitive electronics. A method is disclosed for perforating portions of the EMI shields that overlay the water sensitive electronics. Methods of sealing board to board connectors are also disclosed. In one embodiment solder leads of the board to board connectors can be covered by a silicone seal.

Abstract: A method of forming a layer, the method including providing a feedstock, the feedstock including a first component and a second component; ionizing at least part of the feedstock thereby forming a plasma, wherein the plasma includes constituents selected from: the first component, derivatives of the first component, ions of the first component, ions of derivatives of the first component, the second component, derivatives of the second component, ions of the second component, ions of derivatives of the second component, or combinations thereof, and wherein the individual identities, individual ratios, total quantities, or any combination thereof of the first and second component in the feedstock can modulate the makeup of the plasma; forming a beam from the plasma; and forming a layer from the beam, wherein the layer includes at least some portion of at least the first or the second component.

Abstract: To provide a plasma CVD apparatus capable of forming a thin film on the inner surface of a pipe even without a vacuum vessel. An aspect of the present invention is a plasma CVD apparatus including a first member sealing an end of a pipe; a second member sealing the other end of the pipe; a gas introduction mechanism that is connected to the first member and that introduces a raw material gas into the pipe; an exhausting mechanism that is connected to the second member and that vacuum-exhausts the inside of the pipe; an electrode disposed in the pipe; and a high-frequency power.

Abstract: A method is provided for exciting at least one electrode of a capacitively coupled reactive plasma reactor containing a substrate. The electrode is excited by applying a RF voltage with a trapezoidal waveform comprising a ramp-up, a high plateau, a ramp-down and a low plateau. The plasma density can be controlled by adjusting the duration of the ramp-up, the duration of the ramp-down, the amplitude and the repetition rate of the trapezoidal waveform. The ion energy distribution function at the substrate can be controlled by adjusting the amplitude and the relative duration between the high plateau and the low plateau of the trapezoidal waveform.

Abstract: The present invention relates to the treatment of internal surfaces of a hollow body, on the inner surfaces of which areas having different surface properties, for example, having hydrophilic and hydrophobic properties, are produced. The invention further relates to fluid separators that are based on said hollow bodies and that have areas having different surface properties. Such fluid separators are used in medical technology and analysis, in particular biochemical analysis.

Abstract: There is provided a method for producing a surface-treated metallic material, by use of which a metallic material having a stable and excellent sliding characteristic can be produced with a low environmental load without covering the metallic material surface with an oxide film. The method for producing a surface-treated metallic material includes immersing an anode and a cathode in an electrolyte solution, placing a metallic material used as a material to be treated above the surface of the electrolyte solution, and applying a voltage between the anode and the cathode to treat the metallic material surface, the voltage being equal to or higher than a voltage for causing a complete plasma state.

Abstract: The plasma processing apparatus includes a dielectric member for defining a chamber, a gas introducing part for introducing a gas into the chamber, a discharge coil disposed on one side of the dielectric member and supplied with AC power to generate a plasma in the chamber into which the gas has been introduced, a conductor member disposed on the other side of the dielectric member and facing the discharge coil with the chamber of the dielectric member interposed therebetween, an AC power source for supplying AC voltage to the discharge coil, an opening communicating with the chamber and serving for applying the plasma to a substrate to be processed, and a moving mechanism for moving the substrate relative to the chamber so that the substrate passes across a front of the opening. The discharge coil is grounded or connected to the conductor member via a voltage generating capacitor or a voltage generating coil.

Abstract: The invention concerns the use of ruthenium containing precursors having the formula (1) wherein R1, R2 . . . R10 are independently selected from H, C1-C4 linear, branched, or cyclic alkyl group, C1-C4 linear, branched, or cyclic alkylsilyl group (mono, bis, or trisalkyl), C1-C4 linear, branched, or cyclic alkylamino group, or a C1-C4 linear, branched, or cyclic fluoroalkyl group (totally fluorinated or not); for the deposition of a Ru containing film on a substrate.

Abstract: A method for depositing functional groups on a surface of an object, and to the object treated as such, by generating and maintaining a plasma, bringing the object surface close to or in a space between the plasma electrodes, an atmosphere being present between the two electrodes, and depositing a plurality of functional groups on at least part of the surface of the object, wherein the atmosphere between the two electrodes comprises a multi-functional hyperbranched compound which is a polymer based on ABm type monomers, or a derivative of such polymer, wherein m is at least 2, A and B have reactive functional groups selected such that group A is reacted at least m times with group B, and the hyperbranched compound has a degree of branching (DB) in the range of 10.0-99.9%.

Abstract: High-deposition rate methods for forming transparent ashable hardmasks (AHMs) that have high plasma etch selectivity to underlying layers are provided. The methods involve placing a wafer on a powered electrode such as a powered pedestal for plasma-enhanced deposition. According to various embodiments, the deposition is run at low hydrocarbon precursor partial pressures and/or low process temperatures. Also provided are ceramic wafer pedestals with multiple electrode planes embedded with the pedestal are provided. According to various embodiments, the pedestals have multiple RF mesh electrode planes that are connected together such that all the electrode planes are at the same potential.

Abstract: The present invention relates to an apparatus (10) for plasma processing an article (12), the apparatus comprising: a chamber (14) for receiving an article to be processed; electrode means (16) for generating an electric field in said chamber for establishing a plasma in said chamber so that said article can be processed; generation means (24) for generating alternating electrical energy for transmission to said electrode means (18); connection means for connecting said generation means to said electrode means (20); and control means for varying the location of nodes and anti-nodes of standing waves generated in said chamber during processing, so that a plurality of standing waves are generated over time which are not coincident with one another.

Abstract: Methods for processing a substrate include a) arranging a substrate on a pedestal in a processing chamber; b) supplying precursor to the processing chamber; c) purging the processing chamber; d) performing radio frequency (RF) plasma activation; e) purging the processing chamber; and f) prior to purging the processing chamber in at least one of (c) or (e), setting a vacuum pressure of the processing chamber to a first predetermined pressure that is less than a vacuum pressure during at least one of (b) or (d) for a first predetermined period.

Abstract: A processing system is disclosed, having an electron beam source chamber that excites plasma to generate an electron beam, and an ion beam source chamber that houses a substrate and also excites plasma to generate an ion beam. The processing system also includes a dielectric injector coupling the electron beam source chamber to the ion beam source chamber that simultaneously injects the electron beam and the ion beam and propels the electron beam and the ion beam in opposite directions. The voltage potential gradient between the electron beam source chamber and the ion beam source chamber generates an energy field that is sufficient to maintain the electron beam and ion beam as a plasma treats the substrate so that radio frequency (RF) power initially applied to the processing system to generate the electron beam can be terminated thus improving the power efficiency of the processing system.

Abstract: Systems and methods for producing a material of desired thickness. Deposition techniques such as atomic layer deposition are alter to control the thickness of deposited material. A funtionalization species inhibits the deposition reaction.

Abstract: A method and apparatus for coating and baking and deposition of surfaces on glass substrate or flexible substrate, such as films and thin glass sheets or other similar work pieces as it transitions thru and between small gaps of aero-static or hydro-static porous media bearings and differentially pumped vacuum grooves, in a non-contact manner, in order to process within a vacuum environment. The process is also intended to incorporate simultaneous and immediately sequential ordering of various processes.

Abstract: A high-temperature insulation assembly for use in high-temperature electrical machines and a method for forming a high-temperature insulation assembly for insulating conducting material in a high-temperature electrical machine. The assembly includes a polymeric film and at least one ceramic coating disposed on the polymeric film. The polymeric film is disposed over conductive wiring or used as a conductor winding insulator for phase separation and slot liner.

Abstract: A hybrid deposition process of CVD and ALD, called NanoLayer Deposition (NLD) is provided. The NLD process is a cyclic sequential deposition process, including introducing a first plurality of precursors to deposit a thin film and introducing a second plurality of precursors to modify the deposited thin film. The deposition using the first set of precursors is not self limiting and is a function of substrate temperature and process time. The second set of precursors modifies the already deposited film characteristics. The second set of precursors can treat the deposited film, including treatments such as modification of film composition and doping or removal of impurities from the deposited film. The second set of precursors can also deposit another layer on the deposited film. The additional layer can react with the existing layer to form a compound layer, or can have minimum reaction to form a nanolaminate film.

Abstract: A method of making a fluorinated fibrous web, which method includes providing a nonwoven web 22 that contains polymeric fibers, creating a plasma that contains fluorine atoms at a first location 14, and contacting the nonwoven web with products from the plasma at a second location 26 remote from the first location 14. The method avoids exposure of the web to the plasma and hence expands the manufacturing processing window. Webs so fluorinated have a different C3F4H+ to C2F5+ ratio when compared to locally fluorinated webs having similar levels of surface fluorination. The remote fluorinated webs can be subsequently charged electrically to provide a good performing electret filter 40 suitable for use in an air purifying respirator 30. Webs fluorinated in accordance with this invention also may exhibit good performance even after being “aged” at high temperatures.

Abstract: A screen printing film and a surface modification method of the same are provided. The method includes providing a substrate having a PVA film on at least one surface of the substrate. The surface of the substrate is modified by generating a heating source and a plasma source, wherein a heating temperature to the substrate is between 100° C. and 500° C. The step of generating the heating source may be prior to, after, or simultaneous with the step of generating the plasma source.

Abstract: A plasma-enhanced chemical vapor deposition (“PECVD”) apparatus includes: an ejecting unit which is configured to eject a gas toward a substrate onto which the gas is deposited; a lift which is configured to support and selectively raise or lower a mask unit in which is defined a pattern through which the gas ejected from the ejecting unit passes towards the substrate; and a susceptor into which a portion of the lift is inserted, and which is configured to linearly move the substrate. A temperature of the lift is variable.

Abstract: A method of photopatterning rewritable reactive groups onto surfaces using typically a plasmachemical deposition of functionalized materials, followed by molecular printing of inks. Subsequent treatment of the reactive groups allows for surface rewriting and also the method allows for the creation of either positive or negative image multifunctional rewritable patterned surfaces.

Abstract: A plasma processing system having at least a plasma processing chamber for performing plasma processing of a substrate and utilizing at least a first processing state and a second processing state. Plasma is present above the center region of the substrate during the first processing stale to perform plasma processing of at least the center region during the first processing state. Plasma is absent above the center region of the substrate but present adjacent to the bevel edge region during the second processing state to at least perform plasma processing of the bevel edge region during the second processing state. During the second processing state, the upper electrode is in an RF floating state and the substrate is disposed on the lower electrode surface.

Abstract: An inductively coupled plasma source for a focused charged particle beam system includes a conductive shield within the plasma chamber in order to reduce capacitative coupling to the plasma. The internal conductive shield is maintained at substantially the same potential as the plasma source by a biasing electrode or by the plasma. The internal shield allows for a wider variety of cooling methods on the exterior of the plasma chamber.

Abstract: Methods are disclosed for depositing material onto and/or etching material from a substrate in a surface processing tool having a processing chamber, a controller and one or more devices for adjusting the process parameters within the chamber. The method comprises: the controller instructing the one or more devices according to a series of control steps, each control step specifying a defined set of process parameters that the one or more devices are instructed to implement, wherein at least one of the control steps comprises the controller instructing the one or more devices to implement a defined set of constant process parameters for the duration of the step, including at least a chamber pressure and gas flow rate through the chamber, which duration is less than the corresponding gas residence time (Tgr) of the processing chamber for the step.

Abstract: The invention relates to a method for manufacturing thin films on substrates, the method comprising providing a deposition system, said system comprising an inner non-airtight enclosure for containing at least one substrate and an outer airtight chamber completely surrounding said enclosure, and providing at least one substrate in the inner non-airtight enclosure. The inner non-airtight enclosure is maintained at a pressure lower than the pressure within said outer airtight chamber, and a backfilling gas comprising at least hydrogen or helium is introduced into the outer airtight chamber volume.

Abstract: Provided herein are processes for depositing a plasma coating on a substrate and coated substrates obtained thereby. More particularly, processes for characterizing a plasma coating on a substrate are provided. The process for depositing a plasma coating includes the step of exposing the substrate to a plasma. The plasma includes at least one coating precursor and one fluorophore other than the coating precursor.

Abstract: Organometallic complexes and use thereof in thin film deposition, such as CVD and ALD are provided herein. The organometallic complexes are (alkyl-substituted ?3-allyl)(carbonyl)metal complexes.

Abstract: A method of depositing a thin film on a substrate inside a vacuum chamber includes a first process that deposits a first film on the substrate, the first process including a process of supplying an active species that is obtained by changing a gas to plasma and is related to a quality of the thin film to the substrate; and a second process that deposits a second film that is the same type as that of the first film on the first film, the second process including a process of supplying the active species to the substrate so that a supply quantity of the active species per a unit film thickness is greater than a first supply quantity of the active species per the unit film thickness in the first process by adjusting a controlled parameter.