Abstract: A packet handling system is disclosed that can include at least one main processor; a plurality of offload processors connected to a memory bus and configured to provide security related services on packets prior to redirection to the main processor; and a virtual switch respectively connected to the main processor and the plurality of offload processors using the memory bus, the virtual switch configured to receive memory read/write data over the memory bus.

Abstract: Disclosed are a test apparatus and a test method for testing a plurality of blocks in a circuit, the plurality of blocks having identical structures. The test apparatus comprises: a comparing device, configured to collect output responses generated by the plurality of blocks by applying an excitation signal to the plurality of blocks in parallel, compare the output responses of the plurality of blocks to determine whether the output responses of the plurality of blocks are identical, and output results of the comparison of the comparing device; and a determining device, configured to receive the results of the comparison of the comparing device, and determine whether the plurality of blocks have a defect according to the results of the comparison of the comparing device. With the test apparatus and the test method, a process for testing the plurality of blocks having the identical structures may be simplified, and test efficiency may be improved.

Abstract: Disclosed are a system, a method and/or an apparatus of a shareable virtual non-volatile storage device for a server. In one embodiment, the system includes a server, a storage array, a management processor, and a switching fabric. The storage array includes a storage device coupled with a controller associated with a shared driver to receive a data request from the server at a remote location from the storage array through the switch fabric via a communication link to direct the data request to the storage device coupled with it and transmit data to the server through the switch fabric. A virtual storage device is generated in the server to enable the server to share the shared driver in the storage array with other servers through the switch fabric between the server and the storage array. The server distributes the data across the storage devices through the shared driver.

Abstract: A display device includes a display panel, a gate driver, a data driver, and a driving control unit. The display panel includes pixels connected to a corresponding one of gate lines and a corresponding one of data lines. The gate driver drives the gate lines. The data driver includes first pads and second pads. The first pads are connected to each of first data lines of the data lines, and the second pads are connected to each of second data lines of the data lines. The driving control unit provides control signals and a data signal to the data driver, and to control the gate driver. The data driver includes a digital-to-analog converter and a switching circuit. The digital-to-analog converter converts the data signal into analog signals. The switching circuit sequentially outputs the analog signals to the first pads during a test mode.

Abstract: Disclosed herein are a method and an apparatus for shortening a data comparison test time by using peer-to-peer transfers between peripheral component interconnect express (PCIe) endpoints when testing solid state drive (SSD) devices. A memory device test apparatus performing a data comparison test of a memory device mounted in a downstream port of a peripheral component interconnect express (PCIe) switch by performing a writing process and a reading-back process by a control of a host central processing unit (CPU) includes: a comparison test unit (FPGA) connected to the downstream port of the PCIe switch, performing peer-to-peer communication with the memory device to supply write data to the memory device and receive read-back data from the memory device, and performing the data comparison test.

Abstract: An electronic device includes a semiconductor memory that includes: a first line; a second line intersecting the first line; a memory cell coupled at a cross point of the first line and the second line; and a test control circuit coupled between the first line and the second line and suitable for controlling parameters corresponding to operational characteristics of the memory cell and outputting a result information signal corresponding to the control result to a pad based on a clock signal and an initial value set signal.

Abstract: Methods and apparatuses relating to a hardware memory test unit to check a section of a data storage device for a transient fault before the data is stored in and/or loaded from the section of the data storage device are described. In one embodiment, an integrated circuit includes a hardware processor to operate on data in a section of a data storage device, and a memory test unit to check the section of the data storage device for a transient fault before the data is stored in the section of the data storage device, wherein the transient fault is to cause a machine check exception if accessed by the hardware processor.

Abstract: A programmable device is disclosed which includes: a circuit data setting section configured to set a logical configuration in a processing circuit using first setting information retrieved from a memory; and a communication status monitoring section configured to determine whether communication is established between the processing circuit and a host computer using the setting made by the circuit data setting section. If it is determined that the communication is not established, the circuit data setting section retrieves from the memory second setting information different from the first setting information to again set a logical configuration in the processing circuit on the basis of the second setting information.

Abstract: A semiconductor memory device is provided which includes memory cells, a first error correction code (ECC) circuit configured to generate at least one selected parity bit corresponding to a selected data bit using an error correction code during a write operation and to correct an error of the selected data bit using the selected parity bit during a read operation, and a test circuit configured to selectively perform at least one of an error correction operation and a redundancy repair operation on at least one of the selected data bit and the selected parity bit based on test mode register set (TMRS) information.

Abstract: A semiconductor device may be provided. The semiconductor device may include a failure information generation circuit configured to generate first failure information. The semiconductor device may include a first latch data generation circuit configured to include the first failure information into first latch data of a first block and configured to output the first latch data including the first failure information. The semiconductor device may include a data synthesis circuit configured to generate first synthesis data.

Abstract: In some examples, a memory device generates and exposes parity/difference information to a test system to reduce overall test time. The parity/difference information may be generated based on parity bits read from the memory device and parity bits produced from data bits stored in the memory device. In some cases, the parity/difference information may be compared to an expected parity/difference to determine a number of correctable errors which occurred during testing, while the data bits may be compared to expected data to determine a number of uncorrectable errors which occurred during testing.

Abstract: A memory chip includes a chip input-output pad unit, a plurality of semiconductor dies. The chip input-output pad unit includes a plurality of input-output pins connected to an external device and the plurality of semiconductor dies are connected commonly to the chip input-output pad unit and having a full memory capacity respectively. Each semiconductor die includes a die input-output pad unit, a memory region and a conversion block. The die input-output pad unit includes a plurality of input-output terminals respectively connected to the input-output pins of the chip input-output pad unit. The memory region includes an activated region corresponding to a portion of the full memory capacity and a deactivated region corresponding to a remainder portion of the full memory capacity. The conversion block connects the activated region except the deactivated region to the die input-output pad unit.

Abstract: A semiconductor device and a method of operating the same are provided. The method includes determining the degree of deterioration of a selected memory block, performing a program operation of the selected memory block in a first program operating condition when it is determined that the selected memory block is not deteriorated and performing the program operation of the selected memory block in a second program operating condition when it is determined that the selected memory is deteriorated, and updating the program operating time of the selected memory block.

Abstract: In accordance with the present description, a device includes an internal defect detection and repair circuit which includes a self-test logic circuit built in within the device and a self-repair logic circuit also built in within the device. In one embodiment, the built in self-test logic circuit may be configured to automatically identify defective memory cells in a memory. Upon identifying one or more defective memory cells, the built in self-repair logic circuit may be configured to automatically repair the defective memory cells by replacing defective cells with spare cells within the memory.

Abstract: An IC that includes a first memory controller, a second memory controller, and a first bonding circuit coupled to the first memory controller, where the first bonding circuit is a hard logic bonding circuit and is operable to coordinate memory control functions of the first memory controller and the second memory controller. In one implementation, the first memory controller is an N bits wide memory controller, the second memory controller is an M bits wide memory controller, and the first bonding circuit is operable to coordinate the memory control functions of the first memory controller and the second memory controller such that the first and second memory controllers together function as an N+M bits wide memory controller, where N and M are positive integers.

Abstract: A process and apparatus provide a JTAG TAP controller (302) to access a JTAG TAP domain (106) of a device using a reduced pin count, high speed DDR interface (202). The access is accomplished by combining the separate TDI and TMS signals from the TAP controller into a single signal and communicating the TDI and TMS signals of the single signal on the rising and falling edges of the TCK driving the DDR interface. The TAP domain may be coupled to the TAP controller in a point to point fashion or in an addressable bus fashion. The access to the TAP domain may be used for JTAG based device testing, debugging, programming, or other type of JTAG based operation.

Abstract: In accordance with the present description, a device includes an internal defect detection and repair circuit which includes a self-test logic circuit built in within the device and a self-repair logic circuit also built in within the device. In one embodiment, the built in self-test logic circuit may be configured to automatically identify defective memory cells in a memory. Upon identifying one or more defective memory cells, the built in self-repair logic circuit may be configured to automatically repair the defective memory cells by replacing defective cells with spare cells within the memory.

Abstract: A memory device includes memory arrays configured to store pages of data organized into multiple ECC words. The memory device also includes at least one input/output pad for each ECC word associated with a page, such that a first level of error correction may be performed by the memory device on each of the ECC words associated with a page and a second level of error correction is performed on the data output by each of the input/output pads during a particular period of time.

Abstract: A device identifier associated with a device may be determined. A diagnostic processing identifier associated with diagnostic processing to be performed for the device may be identified or generated. In addition, a diagnostic processing route that designates an order in which the device is to be routed between one or more diagnostic stations for diagnostic processing may be determined. Diagnostic processing of the device may be conducted and information indicating results of the diagnostic processing may be received. The information may indicate one or more defects identified as part of the diagnostic processing. Additional processing, such as processing to determine whether a defective device is repairable, may be performed based at least in part on the results of the diagnostic processing.

Abstract: A binary content addressable memory (BCAM) is disclosed. The BCAM includes a memory array, data signature circuitry, and a data match module and compare circuitry. The memory array is configured to store a data entry for a data word and a corresponding data signature for the data entry. The data signature circuitry is configured to calculate the data signature for the data entry and to calculate the data signature for an input word. The data match module compares the data entry to the input word to produce a content match output, and compares the data signature for the data entry to the data signature of the input word to produce a signature match output. The compare circuitry compares the content match output and the data signature match output.

Abstract: A system may utilize at least an enclosed test deck that has an access port door covering an access port. The system can test a data storage component by presenting the enclosed test deck to an exchange assembly before exposing an interior test region of the test deck by engaging the access port door with a tool of the exchange assembly. At least one data storage component may be installed into the interior test region and subsequently the access port is closed by installing the access port door into the access port.

Abstract: A static random access memory device may include a write driver configured to float one of a first bitline and a second bitline connected to a memory cell and apply a write voltage to the other bitline in response to a logic state of a data signal; a write failure detector configured to receive a voltage of the floated bitline and output a write failure signal; and an assist voltage generator configured to generate a write assist voltage in response to the write failure signal. The write driver may additionally provide the write assist voltage to a bitline to which the write voltage is applied.

Abstract: Several systems and methods of chip select are described. In one such method, a device maintains two identifiers, (ID_a and ID_m). When the device receives a command, it examines the values of ID_a and ID_m relative to a third reference identifier (ID_s). If either ID_a or ID_m is equivalent to ID_s, the device executes the command, otherwise, the device ignores the command. By using two different identification methods, a system has options in choosing to activate devices, being able to selectively switch between selecting multiple devices and single devices in a quick manner. In another such method, a device may have a persistent area that stores identification information such as an ID_a. Thus, system functionality may remain independent from any defect/marginality associated with the physical or logical components required for initial ID_a assignment of all devices in the system.

Abstract: Embodiments relate to performing a memory scrubbing operation that includes injecting an error on a write operation associated with a memory address. One or more errors are detected during a two-pass scrub operation on the memory address. Based on a result of the two-pass scrub operation, one or more of a hard error counter associated with the memory address and a soft error counter associated with the memory address is selected. The one or more selected counters are updated based on the result of the two-pass scrub operation.

Abstract: Example apparatus and methods selectively replicate some erasure codes associated with a message and selectively distribute, without replicating, other erasure codes associated with the message. The message may have k symbols and n erasure codes may have been generated for the message, n>=k. In one embodiment, erasure codes that store plaintext information from the message (e.g., un-encoded symbols) may be replicated (e.g., sent to all devices using erasure codes associated with the message) while erasure codes that do not store plaintext information may be distributed (e.g., selectively moved to less than all devices) without being replicated. Some (e.g., less than k) erasure codes that do not store plaintext information may be stored unencrypted in the cloud. The generator matrix will not be stored in the cloud.

Abstract: A LED driver, a LED driving method and a controller for LED driver are discussed in the present invention. The LED driver detects the phase of the input signal which is phase cut by a triac from a pre-E-transformer. The LED driver regulates the current flowing through the LED strings by varying the phase of the input signal.

Abstract: The present disclosure provides a data storage method, a data storage system and a requesting node. The data storage method includes the following steps. A register identifier and a register time are written into a target data table. The target data table is read to look for a register time record, such that an access right of the storage node is determined. A requesting node having the access right computes result data, and writes a usage identifier and the result data in the target data table. The target data table is read to judge the validity of the result data.

Abstract: A storage system includes a plurality of data disks that store information, and a parity disk that corresponds to a disk group including some of the plurality of data disks and stores parity information generated on the basis of data of the data disks included in the corresponding disk group. Any of the data disks is included in a plurality of the disk groups.

Abstract: The BIST circuit includes an address data converting circuit that receives the logical address signal, the logical data signal, and the logical expected value signal. The address data converting circuit converts the logical data according to a physical configuration in the memory so as to generate a physical data signal specifying physical data to be written into the memory. The address data converting circuit converts the logical address according to the physical configuration in the memory so as to generate a physical address signal specifying a physical address of the memory for the physical data. The address data converting circuit converts the logical expected value according to the physical configuration in the memory so as to generate a physical expected value signal specifying a physical expected value that is an expected value of read data of the memory for the physical data.

Abstract: The subject matter described herein includes methods, systems, and computer readable media for providing for specification or autodiscovery of DUT topology information and for using the DUT topology information to generate DUT-topology-specific test results. One exemplary method includes, providing for specification or autodiscovery of DUT topology information associated with or more devices under test (DUT). The method further includes transmitting test packets to the at least one DUT. The method further includes receiving packets transmitted from or through the at least one DUT. The method further includes using the DUT topology information and the received packets to generate DUT-topology-specific test results.

Abstract: A communication apparatus includes a communication unit configured to communicate in a first communication mode in which a memory of the communication apparatus is accessed by another communication apparatus, a detection unit configured to detect an access from the another communication apparatus to the memory of the communication apparatus, and a shift unit configured to shift an operation mode of the communication apparatus in response to a condition including at least the access to the memory detected by the detection unit.

Abstract: A memory hard macro designed to support multiple design for test (DFT) techniques having signal paths associated with the DFT techniques and the functional operation of the memory instance that share logic devices or components. The memory hard macro includes a functional input port and a functional output port, forming a functional memory data path, which includes input latches from the memory instance. The memory hard macro also includes a scan input port and a scan output port, forming a scan data path, which includes input latches from the array of data buffer circuits and output latches from the array of sense amplifiers. The memory hard macro further includes a BIST input port and a BIST output port, forming a BIST data path, which includes at least one input latch from the array of data buffer circuits and at least one output latch from the array of sense amplifiers.

Abstract: A built-in self-test (BIST) circuit to test one or more memory blocks on an integrated circuit. The one or more memory blocks further includes a first memory block and a second memory block A built-in soft-repair controller (BISoR) is provided to soft repair the one or more memory blocks. The BIST circuit in conjunction with the BISoR is configured to test and soft repair the first memory block before performing test and soft repair of the second memory block.

Abstract: Embodiments relate to testing memory write operations. An aspect includes detecting a first write operation to a set of “n” divisions in a memory table, and defining a selected set of entries of an optimization checking table corresponding to the set of “n” divisions of the memory table. The aspect includes determining that at least one selected entry of the selected set of entries is not among an optimal set of entries of the checking table. The aspect further includes determining whether to generate an optimization error or to end an optimization analysis of the first write operation without generating the optimization error by comparing the first time stamps of one or both of the at least one selected entry and one or more optimal entries of the optimal set of entries to a temporal window defined by a predetermined duration.

Abstract: An integrated circuit includes a set of non-volatile bits that may be programmed during multiprobe testing of the integrated circuit (IC). A defective portion of the IC is identified by testing the IC during multiprobe testing prior to packaging the IC. The IC is scrapped if the defective portion of IC does not meet repair criteria. A defect category is selected that is indicative of the defective portion, wherein the defect category is selected from a set of defect categories. The defective portion is replaced with a standby repair portion by modifying circuitry on the IC. The selected defect category is recorded in a plurality of non-volatile bits on the IC. The non-volatile bits may be read after extended testing or after end-user deployment in order to track failure rate of repaired ICs based on the defect category.

Abstract: A memory test device for testing a memory device is provided. The memory test device includes a sequencer configured to output first and second sequencer outputs that are different from each other in response to a sequencer input. A first pattern generator is configured to output a first test pattern according to the first sequencer output. A second pattern generator is configured to output a second test pattern according to the second sequencer output. A selector is coupled to the first and second pattern generators and configured to output write data according to the first test pattern and the second test pattern.

Abstract: A system method of detecting address-swap faults in a multiport memory as described herein includes minimum testing for inversion faults and bit-swap faults for each port of the multiport memory. Different test types may be performed for inversion and bit-swap including pass/fail, and diagnostic testing for locating faulty ports. Pass/fail testing may be used for identifying whether the IC is good or bad, and additional diagnostic testing using additional cycles may be used for disabling faulty ports or correcting inverted address bits. The test method may be implemented as a function test or as a memory built-in self-test. The test method may be used during manufacturing test or during function design verification.

Abstract: The present invention provides a method for recording programs, a multimedia system and a network side device. The multimedia system includes a network side device and a plurality of nodes, wherein the network side device is configured to generate a recording task after receiving a recording request, and send in advance the recording task to each node in which a channel specified in the recording task is stored, and the nodes are configured to record a program on the channel specified in the recording task after receiving the recording task, and return recording result information to the network side device. According to the recording method of the present invention, when the recording is failed, inter-node mutual reconstruction and complementary recording can be performed, which greatly decreases the possibility of failure in the recording of the program, and provides the quality of service of more fluent TVOD for users.

Abstract: A memory device or module selects between alternative command ports. Memory systems with memory modules incorporating such memory devices support point-to-point connectivity and efficient interconnect usage for different numbers of modules. The memory devices and modules can be of programmable data widths. Devices on the same module can be configured select different command ports to facilitate memory threading. Modules can likewise be configured to select different command ports for the same purpose.

Abstract: A window lifter device for driving a motor to control the up and down motion of an automobile window includes: a switch assembly; an up driving circuit for driving the motor to move up the window; a down driving circuit for driving the motor to move down the window; and a control circuit directly coupled between the switch assembly and the up and down driving circuits for controlling the up driving circuit to drive the motor to move up the window when the switch assembly is in a manual up operating state, and controlling the down driving circuit to drive the motor to move down the window when the switch assembly is in a manual down operating state.

Abstract: A data processing apparatus for generating running performance information indicative of a running state of at least one device, has a data storage process section that obtains device state information indicative of a result of detection of a state of the at least one device, and obtains operational activity performer information indicative of a result of detection of whether an operational activity performer that performs an operational activity to the at least one device or an operational activity with the at least one device is present at a predetermined position for the operational activity performer to do the operational activity on the at least one device or the operational activity with the at least one device, and causes the device state information and the operational activity performer information to be stored in a result-of-detection storage.

Abstract: Provided is a memory system and wear-leveling method. A memory system includes a flash memory device and a memory controller. The flash memory device includes a plurality of memory blocks, each including a plurality of memory cells. The memory controller is configured to control the flash memory device based on erase event information and error checking and correction (ECC) event information of each of the memory blocks such that use of the memory blocks is distributed more uniformly.

Abstract: A write or read method for use in a computer having multiple channels of memory includes writing or reading data to or from one channel in the memory, and simultaneously in parallel writing or reading an error correction code corresponding to the data to or from a different channel in the memory.

Abstract: The various implementations described herein include systems, methods and/or devices that may enhance the reliability with which data can be stored in and read from a memory. Some implementations include a method of compressing a sequence of read data values into a bit-tuple of a predefined length to enable soft information decoding systems that use less power and/or less memory. In some implementations, the bit-tuple of a predefined length is produced using M single-bit buffer locations, where M corresponds to the predefined length of the bit-tuple. Some implementations utilize a collection of characterization vectors that include soft information values associated with the possible permutations of the bit-tuples. In turn, a sequence of bit-tuples is converted into a sequence of soft information values by retrieving a particular characterization vector, and selecting a respective soft information value from that characterization vector for each bit-tuple in the sequence.

Abstract: Embodiments of design-for-test (DFT) apparatuses and related techniques are disclosed herein. In some embodiments, a DFT apparatus may include a static random access memory (SRAM) cell, read/write/decoder (R/W/decoder) circuitry to provide a nominal word line (WL) voltage and a nominal bit line (BL) voltage for application to the SRAM cell during accesses. The DFT apparatus may also include test circuitry having an activated state and a deactivated state. When the test circuitry is in the activated state, in some embodiments, the WL voltage and/or the BL voltage applied to the SRAM cell may be different from the nominal voltages provided by the R/W/decoder circuitry. The R/W/decoder circuitry may be operated to perform accesses to the SRAM cell while the test circuitry is in the activated state. Other embodiments may be disclosed and/or claimed.

Abstract: In non-volatile memory devices, the accessing of data on word line can degrade the data quality on a neighboring word line, in what is called a read disturb. Techniques are presented for determining word lines likely to suffer read disturbs by use of a hash tree for tracking the number of reads. Read counters are maintained for memory units at a relatively coarse granularity, such as a die or block. When the counter for one of these units reaches a certain level, it is subdivided into sub-units, each with their own read counter, in a process that be repeated to determine frequently read word lines with a fine level of granularity while only using a relatively modest amount of RAM on the controller to store the counters.

Abstract: An exemplary embodiment of the present disclosure illustrates a memory test system comprising a memory device, a probe card, and a tester. The memory device comprises a memory die with a plurality of memory banks, a plurality of input circuits, and a plurality of output circuits, wherein each of the input circuits has a first input pin and a second pin, the first input pins of the input circuits are used to read a plurality of patches of data stored in memory cells of the memory banks, and the second input pins are used to receive a compressed result. The output circuits receive compressed signals output from the input circuits, and the probe card mixes the compressed output signals output from the output circuits to output a mixed compressed output signal to the tester.

Abstract: In a method of memory testing in a data processing system, in response to receiving a request for a hardware memory test during boot process of the data processing system, a controller accesses a stored past memory test result. The past memory test result includes at least a first number of test loops used in a past memory test, an identification of a first test pattern, and an error that occurred in the past memory test. The controller adjusts a second number of test loops and a second test pattern to be used in the hardware memory test according to the past memory test result. The controller then performs the hardware memory test according to the adjusted second number of test loops and the second test pattern.

Abstract: A circuit comprises a memory cell, a first circuit, and a second circuit. The memory cell has a first control line and a second control line. The first control line carries a first control signal. The second control line carries a second control signal. The first circuit is coupled with the first control line, the second control line, and a node. The second circuit is coupled to the node and is configured to receive a first clock signal and a second clock signal. The first circuit and the second circuit, based on the first control signal, the second control signal, the first clock signal and the second clock signal, are configured to generate a node signal on the node. A logical value of the node signal indicates a write disturb condition of the memory cell.

Abstract: A memory card includes a memory cell, a connector, a controller, and firmware. The memory cell can switch between a plurality of states. The connector can be connected to an external device and exchange signals including commands and data with the external device. The controller exchanges signals with the connector, analyzes a received signal, and accesses the memory cell to record, retrieve or modify data based on the analysis result. The firmware is located within the controller, controls the operation of the controller, and can be set to a test mode or a user mode. When the firmware receives a test command from the external device and the firmware is set to the test mode, the firmware performs a defect test on the memory cell and transmits the result of the defect test to the external device through the connector.