Abstract: A high power surface mount package including a thick bond line of solder interposed between the die and a heatsink, and between the die and a lead frame, wherein the lead frame has the same coefficient of thermal expansion as the heatsink. In one preferred embodiment, the heatsink and the lead frame are comprised of the same material. The package can be assembled using standard automated equipment, and does not require a weight or clip to force the parts close together, which force typically reduces the solder bond line thickness. Advantageously, the thermal stresses on each side of the die are effectively balanced, allowing for a large surface area die to be packaged with conventional and less expensive materials. One type of die that benefits from the present invention can include a transient voltage suppressor, but could include other dies generating a significant amount of heat, such as those in excess of 0.200 inches square.

Abstract: The invention relates to a power module (10), preferably for a vehicle, in particular an electric vehicle, characterised in that said module includes two vertically adjacent semiconducting chips (12, 14), each chip having a first surface (20, 22) to be connected to a heat sink substrate (24, 26), and a second surface (28, 30) separate from the first and on which at least one electronic component (38a-44b) is arranged, the module being arranged such that the second surfaces of the chips are arranged opposite one another.

Abstract: A noble metal nanoparticle can be grown on a semiconductor substrate by contacting a predetermined region of the substrate with a solution including noble metal ions. The predetermined region of the semiconductor substrate can be exposed by applying a polymeric layer over the substrate selectively removing a portion of the polymeric layer. The nanoparticles can be prepared in a predetermined pattern. Nanowires having a predetermined diameter and a predetermined position can be grown from the nanoparticles.

Abstract: A semiconductor device is formed by molding using a resin with a semiconductor element and one or two heat dissipating plates contained therein, said one or two heat dissipating plates being disposed to face one surface or both the surfaces of the semiconductor element. An intermediate layer is formed by spraying a metal powder to the semiconductor element and to one of or both of the heat dissipating plates using a cold spray method, and the semiconductor element and the heat dissipating plate are bonded together using a solder with the intermediate layer therebetween.

Abstract: An integrated circuit packaging system and method of manufacture thereof includes: a substrate having a bond pad; a B-stage polymer, having a dispersion of conductive particles therein, on the bond pad; and a bond ball inserted into the B-stage polymer for forming intermetallic structures between the bond ball and the bond pad.

Abstract: A semiconductor device includes: a semiconductor substrate that includes a semiconductor; an electrode layer formed on a first surface side inside the semiconductor substrate; a frame layer laminated on the first surface of the semiconductor substrate; a conductor layer formed in an aperture portion formed by processing the semiconductor substrate and the frame layer in such a manner as to expose the electrode layer on the first surface of the semiconductor substrate; a vertical hole formed through the semiconductor substrate from a second surface of the semiconductor substrate to the conductor layer; and a wiring layer that is electrically connected to the electrode layer via the conductor layer at an end portion of the vertical hole, and that extends to the second surface of the semiconductor substrate.

Abstract: A method and apparatus for mixed wire bonding and staggered bonding pad placement. A first plurality of bonding pads is arranged on a semiconductor device. A second plurality of bonding pads is also arranged on the semiconductor device. The bonding pads of the second plurality of bonding pads are arranged in a staggered pattern, such that the first and second pluralities of bonding pads form one of a plurality of double rows of bonding pads on the semiconductor device.

Abstract: A solder-top enhanced semiconductor device is proposed for packaging. The solder-top device includes a device die with a top metal layer patterned into contact zones and contact enhancement zones. At least one contact zone is electrically connected to at least one contact enhancement zone. Atop each contact enhancement zone is a solder layer for an increased composite thickness thus lowered parasitic impedance. Where the top metal material can not form a uniform good electrical bond with the solder material, the device die further includes an intermediary layer sandwiched between and forming a uniform electrical bond with the top metal layer and the solder layer. A method for making the solder-top device includes: a) Lithographically patterning the top metal layer into the contact zones and the contact enhancement zones. b) Forming a solder layer atop each of the contact enhancement zones using a stencil process for an increased composite thickness.

Abstract: A semiconductor package including connecting members having a controlled content ratio of gold capable of increasing durability and reliability by preventing an intermetallic compound having high brittleness from being formed. The semiconductor package includes a base substrate; a first semiconductor chip disposed on the base substrate; and a first connecting member for electrically connecting the base substrate and the first semiconductor chip, and comprising a first bonding portion that includes gold and has a first content ratio of gold that is controlled to prevent an intermetallic compound of AuSn4, (Cu, Au)Sn4, or (Ni, Au)Sn4 from being formed.

Abstract: The present invention relates to a solder ball for semiconductor packaging and an electronic member having such solder ball. Specifically there are provided: a solder ball capable of ensuring a sufficient thermal fatigue property even when a diameter thereof is not larger than 250 ?m as observed in recent years; and an electronic member having such solder ball. More specifically, there are provided: a solder ball for semiconductor packaging that is made of a solder alloy containing Sn as a main element, 0.1-2.5% Ag by mass, 0.1-1.5% Cu by mass and at least one of Mg, Al and Zn in a total amount of 0.0001-0.005% by mass, such solder ball having a surface including a noncrystalline phase that has a thickness of 1-50 nm and contains at least one of Mg, Al and Zn, O and Sn, and an electronic member having such solder ball.

Abstract: In a structure for connecting a semiconductor element having a fine pitch electrode at 50 ?m pitch or less and a pad or wirings on a substrate, for preventing inter-bump short-circuit or fracture of a connected portion due to high strain generated upon heating or application of load during connection, the substrate and the semiconductor element are connected by way of a bump having a longitudinal elastic modulus (Young's modulus) of 65 GPa or more and 600 GPa or less and a buffer layer including one of tin, aluminum, indium, or lead as a main ingredient and, further, protrusions are formed to at least one of opposing surfaces of the bump and the pad or the wirings on the substrate to each other, and the surfaces are connected by ultrasonic waves.

Abstract: A multi-chip module package is provided, which includes a first chip mounted on via a first conductive adhesive and electrically connected to a first chip carrier, a second chip mounted on via a second conductive adhesive and electrically connected to a second chip carrier which is spaced apart from the first chip carrier, wherein the second conductive adhesive is made of an adhesive material the same as that of the first conductive material, a plurality of conductive elements to electrically connect the first chip to the second chip and an encapsulant encapsulating the first chip, the first chip carrier, the second chip, the second chip carrier and the plurality of conductive elements, allowing a portion of both chip carriers to be exposed to the encapsulant, so that the first chip and second chip are able to be insulated by the separation of the first and second chip carriers.

Abstract: A method of forming solder bumps on a substrate is disclosed. The method includes forming a plurality of contact points on the substrate. The method further includes depositing a layer of surface finish material on the plurality of contact points. Furthermore, the method includes disposing a plurality of solder balls on the layer of surface finish material. Each solder ball of the plurality of solder balls has conductive material including a solder alloy and Phosphorus. Thereafter, the method includes applying a solder reflow process to the plurality of solder balls to configure a plurality of solder bumps on the substrate layer. The concentration of the Phosphorus in the solder material is based on target performance characteristic of the substrate having the plurality of solder bumps.

Abstract: A pad for a line which supplies an electric power potential is disposed on a semiconductor integrated circuit and a pad which is not electrically connected to any other electric circuit is disposed on a semiconductor integrated circuit board, and the two pads are connected through a bonding wire. An LC resonant circuit is configured with ease using a floating capacitance C of the pad which is in an electrically open state and which is disposed in a vacant region and an inductance value L of the bonding wire which is disposed in a three-dimensional manner. High-frequency noise is filtered and high-density implementation is realized.

Abstract: A flip chip interconnect of a die on a substrate is made by mating the interconnect bump onto a narrow interconnect pad on a lead or trace, rather than onto a capture pad. The width of the narrow interconnect pad is less than a base diameter of bumps on the die to be attached. Also, a flip chip package includes a die having solder bumps attached to interconnect pads in an active surface, and a substrate having narrow interconnect pads on electrically conductive traces in a die attach surface, in which the bumps are mated onto the narrow pads on the traces.

Abstract: A plastic package (100) in which a semiconductor chip (101) is adhesively (102) attached to a metal stripe (110a) having an agglomerate structure, and electrically connected to bondable and solderable metal stripes (120) having particulate structures; metal stripes (120) are touching metal stripes (110b) of agglomerate structure to form vertical stacks (150); coats of solder (140) are welded to the agglomerate metal stripes (100a and 110b).

Abstract: A semiconductor device includes: a support base material, and a semiconductor element bonded to the support base material with a binder, the binder including: a porous metal material that contacts the support base material and the semiconductor element, and a solder that is filled in at least one part of pores of the porous metal material.

Abstract: Provided is a bonding structure of a bonding wire and a method for forming the same which can solve problems of conventional technologies in practical application of a multilayer copper wire, improve the formability and bonding characteristic of a ball portion, improve the bonding strength of wedge connection, and have a superior industrial productivity. A bonding wire mainly composed of copper, and a concentrated layer where the concentration of a conductive metal other than copper is high is formed at a ball bonded portion. The concentrated layer is formed in the vicinity of the ball bonded portion or at the interface thereof. An area where the concentration of the conductive metal is 0.05 to 20 mol % has a thickness greater than or equal to 0.1 ?m, and it is preferable that the concentration of the conductive metal in the concentrated layer should be five times as much as the average concentration of the conductive metal at the ball bonded portion other than the concentrated layer.

Abstract: An integrated circuit package system including: providing an integrated circuit die, forming a first layer over the integrated circuit die, forming a bridge on and in the first layer, forming a second layer on the first layer, and forming bump pads on and in the second layer, the bump pads connected to ends of the bridge.

Abstract: A semiconductor device includes plural electrode pads arranged in an active region of a semiconductor chip, and wiring layers provided below the plural electrode pads wherein occupation rates of wirings arranged within the regions of the electrode pads are, respectively, made uniform for every wiring layer. To this end, in a region where an occupation rate of wiring is smaller than those in other regions, a dummy wiring is provided. On the contrary, when the occupation rate of wiring is larger than in other regions, slits are formed in the wiring to control the wiring occupation rate. In the respective wirings layers, the shapes, sizes and intervals of wirings below the respective electrode pads are made similar or equal to one another.

Abstract: A semiconductor die has rows of bond pads along the edges of a major surface. The corners of the die are designated as keep out areas, with design layout rules prohibiting a probe-able bond pad from being placed in the keep out areas so that a minimum distance may be maintained between distal ends of adjacent rows of bond pads (i.e., bond pads along adjacent edges). The bond pads of each row have IO pad areas that are aligned with each other and IO probe areas that are aligned with each other. A generally L-shaped bond pad includes a first, vertical part that extends inwardly from an edge of the semiconductor die and a second, horizontal part connected to the vertical part. The L-shaped bond pad may be placed between a last bond pad in a row and a corner keep out area, and the second part of the L-shaped bond pad extends into the corner keep out area.

Abstract: A back of a dielectric transparent handle substrate is coated with a blanket conductive film or a mesh of conductive wires. A semiconductor substrate is attached to the transparent handle substrate employing an adhesive layer. The semiconductor substrate is thinned in the bonded structure to form a stack of the transparent handle substrate and the semiconductor interposer. The thinned bonded structure may be loaded into a processing chamber and electrostatically chucked employing the blanket conductive film or the mesh of conductive wires. The semiconductor interposer may be bonded to a semiconductor chip or a packaging substrate employing C4 bonding or intermetallic alloy bonding. Illumination of ultraviolet radiation to the adhesive layer is enabled, for example, by removal of the blanket conductive film or through the mesh so that the transparent handle substrate may be detached. The semiconductor interposer may then be bonded to a packaging substrate or a semiconductor chip.

Abstract: Methods of forming semiconductor devices that include one or more arrays of memory devices in a three-dimensional arrangement, such as those that include forming a conductive contact in a dielectric material overlying a memory array, wherein a wafer bonding and cleaving process may be utilized to provide a foundation material for forming another memory array having an active region in electrical contact with the conductive contact. Additionally, the conductive contact may be formed in a donor wafer, which in turn may be bonded to a dielectric material overlying a memory array using another wafer bonding process. Novel semiconductor devices and structures including the same may be formed using such methods, for example.

Abstract: A silicon-based thin package substrate is used for packaging semiconductor chips. The silicon-based thin package substrate preferably has a thickness of less than about 200 ?m. A plurality of traces is formed in the silicon-based thin package substrate, connecting BGA balls and solder bumps. A semiconductor chip may be mounted on the solder bumps. The silicon-based thin package substrate may be used as a carrier of semiconductor chips.

Abstract: A semiconductor device includes a package substrate having a plurality of external connection terminals disposed on a first surface thereof and a plurality of internal connection terminals disposed on a second surface thereof and electrically connected with corresponding one of the external connection terminals, a first semiconductor chip stacked over the second surface of the package substrate and having a first flag pad for providing first information and a first internal circuit for adjusting a parameter by a first correction value in response to the first information provided from the first flag pad, and a second semiconductor chip stacked over the first semiconductor chip and having a second flag pad for providing second information and a second internal circuit for adjusting the parameter by a second correction value in response to the second information provided from the second flag pad.

Abstract: A substrate (1) and a semiconductor chip (5) are connected by means of flip-chip interconnection. Around connecting pads (3) of the substrate (1) and input/output terminals (10) of the semiconductor chip (5), an underfill material (7) is injected. The underfill material (7) is a composite material of filler and resin in which the maximum particle diameter of the filler is 5 ?m or below and whose filler content is 40 to 60 wt %. Also, a first main surface of the substrate (1), which is not covered with the underfill material (7), and the side surfaces of the semiconductor chip (5) are encapsulated with a molding material (8). The molding material (8) is a composite material of filler and resin whose filler content is over 75 wt % and in which the glass transition temperature of the resin is over 180° C. An integrated body of the substrate (1) and the semiconductor chip (5), which are covered with the molding material (8), is thinned from above and below.

Abstract: The invention relates to portable electronic objects comprising an integrated circuit chip, and a mounting having two connection terminals for a circuit, as well as to a method for manufacturing such objects. The invention is characterized in that the chip is provided, on the active surface thereof, with two widened connection zones, in particular connection plates, said connection plates being positioned opposite said terminals and electrically connected, by ohmic contact, to the latter, and in that the surface defined by the connection plates, at the surface of the active integrated circuit having said plates, is greater than ½ of the surface of said surface. The invention can be used, in particular, for RFID objects.

Abstract: A solder includes Sn (tin), Bi (bismuth) and Zn (zinc), wherein the solder has a Zn content of 0.01% by weight to 0.1% by weight.

Abstract: A package stack device includes a first package structure having a plurality of first metal posts and a first electronic element disposed on a surface thereof, a second package structure having a plurality of second metal posts and a second electronic element disposed on opposite surfaces thereof, and an encapsulant formed between the first and second package structures for encapsulating the first electronic element. By connecting the first and second metal posts, the second package structure is stacked on the first package structure with the support of the metal posts and the encapsulant filling the gap therebetween so as to prevent warpage of the substrate.

Abstract: In a semiconductor device package having a stress relief spacer, and a manufacturing method thereof, metal interconnect fingers extend from the body of a chip provide for chip interconnection. The metal fingers are isolated from the body of the chip by a stress-relief spacer. In one example, such isolation takes the form of an air gap. In another example, such isolation takes the form of an elastomer material. In either case, mismatch in coefficient of thermal expansion between the metal interconnect fingers and the body of the chip is avoided, alleviating the problems associated with cracking and delamination, and leading to improved device yield and device reliability.

Abstract: A printed circuit board includes a body part formed with connection pads on a first surface thereof; and a warpage compensating part formed over the first surface of the body part and having a height that increases from edges toward a center of the warpage compensating part so that an upper surface of the warpage compensating part facing away from the first surface of the body part is convex upward. The warpage compensating part comprises conductive layer patterns formed over the first surface of the body part to be electrically connected to the connection pads; and a solder resist formed over the first surface of the body part so as to expose the conductive layer patterns. The height of the solder resist gradually increases from both edges toward a center of the solder resist.

Abstract: Lead free solder interconnections for integrated circuits. A copper column extends from an input/output terminal of an integrated circuit. A cap layer of material is formed on the input/output terminal of the integrated circuit. A lead free solder connector is formed on the cap layer. A substrate having a metal finish solder pad is aligned with the solder connector. An intermetallic compound is formed at the interface between the cap layer and the lead free solder connector. A solder connection is formed between the input/output terminal of the integrated circuit and the metal finish pad that is less than 0.5 weight percent copper, and the intermetallic compound is substantially free of copper.

Abstract: An electrical interconnect assembly for electrically interconnecting terminals on a first circuit member with terminals on a second circuit member. The electrical interconnect assembly includes a housing having a plurality of through openings extending between a first surface and a second surface. A plurality of composite contacts are positioned in a plurality of the through openings. The composite contacts include a conductive member having a central portion and at least first and second interface portions. One or more polymeric layers extend along at least the central portion conductive member. One or more coupling features on the composite contacts engage with the housing. At least one engagement feature formed in the polymeric layers proximate the first interface portion mechanically couples with the terminals on the first circuit member.

Abstract: The present invention allows for direct chip-to-chip connections using the shortest possible signal path.

Abstract: Systems and methods are disclosed that enable forming semiconductor chip connections. In one embodiment, the semiconductor chip includes a body having a polyhedron shape with a pair of opposing sides; and a solder member extending along a side that extends between the pair of opposing sides of the polyhedron shape.

Abstract: Methods, systems, and apparatuses are described for improved integrated circuit packages. An integrated circuit package includes a semiconductor substrate and a semiconductor die. The semiconductor substrate has opposing first and second surfaces, a plurality of vias through the semiconductor substrate, and routing one or both surfaces of the semiconductor substrate. The die is mounted to the first surface of the semiconductor substrate. An encapsulating material encapsulates the die on the first surface of the semiconductor substrate.

Abstract: A semiconductor structure includes a first die comprising a first substrate and a first bonding pad over the first substrate, a second die having a first surface and a second surface opposite the first surface, wherein the second die is stacked on the first die and a protection layer having a vertical portion on a sidewall of the second die, and a horizontal portion extending over the first die.

Abstract: A method generates at least one electrical connection from at least one electronic component, which is positioned on a substrate inside an encapsulation, to outside the encapsulation. The functional capability of the electrical connection is to be provided at ambient temperatures greater than 140° C. and in the event of large power losses and extreme environmental influences. A reactive nanofilm, having targeted reaction, which can be triggered exothermically by laser, is used to produce hermetically sealed electrical connections. Using the nanofilm, an output of an electrical connection and a contact of the electrical connection to at least one further electrical contact can be provided.

Abstract: In some embodiments, the semiconductor package includes a substrate having multiple layers, from a first layer to a final layer, a die coupled to the first layer, an electrical connector such as a solder ball coupled to the final layer, and a spiral trace disposed and electrically coupled between the die and the electrical connector. Inductance of the spiral trace is selected such that the package has a predetermined impedance. Material, cross-sectional area, number and density of windings, and total overall length of the spiral trace are selected accordingly. In other embodiments, the semiconductor package includes a substrate with multiple layers; a die coupled to the first of the layers; an electrical connector coupled to the final layer; and a spiral trace, in or on the substrate. The spiral trace is near the die, and electrically coupled between the die and the electrical connector.

Abstract: A fabrication method of a wafer structure includes: providing a substrate having a plurality of die regions and an edge region surrounding the die regions defined thereon; then, forming a dielectric layer, a plurality of MEMS devices, a plurality of metal-interconnect structures and a plurality bonding pads on the substrate in the die regions; next, removing the dielectric layer disposed on the substrate of the edge region to expose the substrate; and thereafter, forming a passivation layer to cover the substrate and the dielectric layer.

Abstract: A ball grid array package device includes a substrate with a copper ball grid array pad formed on the substrate. A nickel layer may be formed on the copper pad and a tin layer formed on the nickel layer. The nickel layer may be formed using an electroless nickel plating process. The tin layer may be formed using an immersion tin process. In some cases, silver may be used instead of tin and formed using an immersion silver process.

Abstract: A semiconductor mounting substrate according to the present invention comprises: a substrate; a semiconductor device, mounted on this substrate; solder bumps, which connect the semiconductor device and the substrate; a first resin, filled in a space between the semiconductor device and the substrate; and electronic components, mounted on a face side of the semiconductor device where the semiconductor device is mounted, wherein bond strength reinforcing resin section is provided at least between a side face in the vicinity of a corner part of the semiconductor device and a substrate surface of the substrate in a position corresponding to the corner part.

Abstract: In one embodiment, a semiconductor device includes a printed wiring board provided with a connection pad, a semiconductor chip provided with an electrode pad and a conductive wire. One end of the conductive wire is connected to the connection pad of the printed wiring board and the other end of the conductive wire is connected to the electrode pad of the semiconductor chip. The semiconductor chip is mounted on the printed wiring board so that the first surface of the semiconductor chip provided with the electrode pad is oriented opposite to the printed wiring board. A first insulating layer is formed on the first surface of the semiconductor chip oriented opposite to the printed wiring board. A thermoplastic second insulating layer is formed on the first insulating layer. Part of the conductive wire between one end and the other end is buried in the second insulating layer.

Abstract: An electronic device includes a substrate and an electronic component. The substrate has a metallized trace. The metallized trace has a metallized layer and an insulation layer. The metallized layer has a high melting point metal component and a low melting point metal component, the high melting point metal component and the low melting point metal component being diffusion bonded together. The insulation layer is formed simultaneously with the metallized layer to cover an outer surface of the metallized layer. The electronic component is electrically connected to the metallized layer.

Abstract: An adhesive composition for flip-chip-mounting a chip component on a circuit board contains an alicyclic epoxy compound, an alicyclic acid anhydride curing agent, and an acrylic resin. The amount of the alicyclic acid anhydride curing agent is 80 to 120 parts by mass based on 100 parts by mass of the alicyclic epoxy compound, and the amount of the acrylic resin is 5 to 50 parts by mass based on 100 parts by mass of the total amount of the alicyclic epoxy compound, the alicyclic acid anhydride curing agent, and the acrylic resin. The acrylic resin is a resin obtained by copolymerization of 100 parts by mass of alkyl (meth)acrylate and 2 to 100 parts by mass of glycidyl methacrylate and having a water absorption rate of 1.2% or less.

Abstract: A first Sn absorption layer is formed on a principal surface of a first substrate, the first Sn absorption layer being made of metal absorbing Sn from AuSn alloy and lowering a relative proportion of Sn in the AuSn alloy. A second Sn absorption layer is formed on a principal surface of a second substrate, the second Sn absorption layer being made of metal absorbing Sn from AuSn alloy and lowering a relative proportion of Sn in the AuSn alloy. A solder layer made of AuSn alloy is formed at least on one Sn absorption layer of the first and second Sn absorption layers. The first and second substrates are bonded together by melting the solder layer in a state that the first and second substrates are in contact with each other, with the principal surfaces of the first and second substrates facing each other.

Abstract: A semiconductor wafer has integrated circuits formed thereon and a top passivation layer applied. The passivation layer is patterned and selectively etched to expose contact pads on each semiconductor die. The wafer is exposed to ionized gas causing the upper surface of passivation layer to roughen and to slightly roughen the upper surface of the contact pads. The wafer is cut to form a plurality of semiconductor dies each with a roughened passivation layer. The plurality of semiconductor dies are placed on an adhesive layer and a reconstituted wafer formed. Redistribution layers are formed to complete the semiconductor package having electrical contacts for establishing electrical connections external to the semiconductor package, after which the wafer is singulated to separate the dice.

Abstract: A device and method of making a device is disclosed. One embodiment provides a substrate. A semiconductor chip is provided having a first surface with a roughness of at least 100 nm. A diffusion soldering process is performed to join the first surface of the semiconductor chip to the substrate.

Abstract: The invention generally relates to semiconductor devices, and more particularly to structures and methods for enhancing electromigration (EM) performance in solder bumps and related structures. A semiconductor structure includes a wire comprising first and second wire segments, a pad formed over the wire, and a ball limiting metallization (BLM) layer formed over the pad. The semiconductor structure also includes a solder bump formed over the BLM layer, a terminal via formed over the BLM layer, and at least one peripheral via formed between the second wire segment and the pad. The first and second wire segments are discrete wire segments.

Abstract: A semiconductor package includes a semiconductor device, and a wiring board where the semiconductor device is mounted. The semiconductor device includes a semiconductor substrate, a piercing electrode configured to pierce the semiconductor substrate and electrically connect the wiring board and the semiconductor device, and a ring-shaped concave part provided so as to surround the piercing electrode, the ring-shaped concave part being configured to open to a wiring board side of the semiconductor substrate.