Semiconductor device
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Description
The broken lines illustrate portions of the semiconductor device that form no part of the claimed designs.
Claims
The ornamental design for a semiconductor device, as shown and described.
Referenced Cited
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Patent History
Patent number: D873227
Type: Grant
Filed: Jun 12, 2019
Date of Patent: Jan 21, 2020
Assignee: Mitsubishi Electric Corporation (Tokyo)
Inventors: Rei Yoneyama (Tokyo), Nobuchika Aoki (Tokyo), Hideki Tsukamoto (Fukuoka), Akihiko Yamashita (Hyogo), Masayuki Ando (Tokyo)
Primary Examiner: Elizabeth J Oswecki
Application Number: 29/694,650
Type: Grant
Filed: Jun 12, 2019
Date of Patent: Jan 21, 2020
Assignee: Mitsubishi Electric Corporation (Tokyo)
Inventors: Rei Yoneyama (Tokyo), Nobuchika Aoki (Tokyo), Hideki Tsukamoto (Fukuoka), Akihiko Yamashita (Hyogo), Masayuki Ando (Tokyo)
Primary Examiner: Elizabeth J Oswecki
Application Number: 29/694,650
Classifications
Current U.S. Class:
Semiconductor, Transistor Or Integrated Circuit (24) (D13/182)