Abstract: A bismuth-substituted rare earth iron garnet single crystal film is represented by a general equation Tb.sub.x Lu.sub.y Bi.sub.3-x-y Fe.sub.5-z Al.sub.z O.sub.12 (where 0.09.ltoreq.y/x.ltoreq.0.23, 1.40.ltoreq.x+y.ltoreq.1.70, 0.20.ltoreq.z.ltoreq.0.38) grown on a non-magnetic garnet substrate (CaGd).sub.3 (MgZrGa).sub.5 O.sub.12 having a lattice constant of 12.490 .ANG.-12.500 .ANG. by a liquid phase epitaxial method. The bithmus-substituted rare earth iron garnet single crystal film satisfies three conditions that (1) the Faraday effect is large, i.e., the film thickness required for the Faraday rotator at a wavelength of 1.55 .mu.m is 450 .mu.m or less, (2) the saturated magnetic field is 800 (Oe) or less, and (3) the temperature coefficient .alpha. is 0.07 deg/.degree.C. or less.

Abstract: A single crystal of a compound comprises a single crystal of a compound at least part of components is of the above mentioned material decomposed at a temperature around the melting point, having a volume of 5 cc or more, and deviation of respective elements in a composition of the single crystal from the stoichiometric composition is within the range of .+-.5%.

Abstract: A process for producing a lithium niobate single crystal which comprises restricting the variation of the Curie point due to the effect of impurities within a specific range in the accurate evaluation of the composition of the lithium niobate single crystal by the use of the Curie point. To produce a lithium niobate single crystal by using, singly or in combination, lithium carbonate having a purity of 99.99% or higher and simultaneously satisfying the condition that the contents therein of elements Na, K, Mg, and A1 are 5.0 ppm or less, 2.0 ppm or less, 0.5 ppm or less, and 0.9 ppm or less, respectively, and niobium pentoxide having a purity of 99.99% or higher and simultaneously satisfying the condition that the contents therein of elements Na, K, Mg, Al, and Cl are 3.0 ppm or less, 1.0 ppm or less, 0.5 ppm or less, 0.9 ppm or less, and 3.0 ppm or less, respectively, according to an ordinary method.

Abstract: A process for growing a multielement compound single crystal, includes the steps of placing a crucible holding a raw multielement compound of a predetermined set of composition ratios Y in a vertical crystal growing furnace having a heater, melting the raw multielement compound held in the crucible with the heater to produce a melt of the raw multielement compound in the crucible, controlling the output of the heater to grow a multielement compound single crystal of a predetermined set of composition ratios X from the melt so that the melt is solidified successively upwards from part of the melt in contact with the bottom of the crucible, and feeding to the melt as a solute at least one element of the raw multielement compound from above the level of the melt in the crucible so as to maintain the predetermined set of composition ratios X of the solute during growth of the multielement compound single crystal. The process can keep constant the composition of the grown multielement compound single crystal.

Abstract: A rutile single crystal with no grain boundaries of large inclination is obtained by an EFG crystal growth process wherein a die provided with slits is incorporated in a feed melt 2 to deliver up the melt through the slits until it reaches the upper face of the die, thereby obtaining a single crystal conforming in configuration to the die by pulling growth.

Abstract: A method of manufacturing a semiconductor device having a step of growing a plurality of electrically connected p-type group III-V compound semiconductor layers by organo-metallic vapor phase epitaxy. In growing the plurality of p-type group III-V compound semiconductor layers, all or some of the p-type layers are grown by using a Mg organo-metallic compound as a p-type impurity and adding an Al organo-metallic compound of a predetermined amount. Doping both the Mg organo-metallic compound and Al organo-metallic compound at the same time considerably shortens the Mg doping delay.

Abstract: A method of growing a single crystal of KTiOPO.sub.4 which is a nonlinear optical material is disclosed. Growth of the single crystal of KTiOPO.sub.4 is carried out by melting a KTiOPO.sub.4 material with a flux to produce a melt, then contacting a seed crystal to the melt, and by slowly cooling at a saturation temperature or below. At this time, molar fractions of K.sub.2 O, P.sub.2 O.sub.5 and TiO.sub.2 contained in the melt fall within a region surrounded by six point in a K.sub.2 O-P.sub.2 O.sub.5 -TiO.sub.2 ternary phase diagram of A (K.sub.2 O:0.4150, P.sub.2 O.sub.5 :0.3906, TiO.sub.2 : 0.1944), B (K.sub.2 O:0.3750, P.sub.2 O.sub.5 : 0.3565, TiO.sub.2 : 0.2685), C (K.sub.2 O: 0.3750, P.sub.2 O.sub.5 : 0.3438, TiO.sub.2 : 0.2813), D (K.sub.2 O: 0.3850, P.sub.2 O.sub.5 : 0.3260, TiO.sub.2 : 0.2890), E (K.sub.2 O: 0.4000, P.sub.2 O.sub.5 : 0.3344, TiO.sub.2 : 0.2656), and F (K.sub.2 O: 0.4158, P.sub.2 O.sub.5 : 0.3744, TiO.sub.2 : 0.2098). In addition, K.sub.15 P.sub.13 O.sub.

Abstract: A method of making pure fibers from a parent material utilizing laser energy. A short wavelength laser is used to achieve a diffraction limited focal spot diameter that is smaller than the diameter of the growing fiber. Focused laser beam convergence is used to obtain a fiber growth rate that depends on the fiber tip portion such that the fiber growth rate achieves a value equal to the controlled fiber pulling rate. The present invention achieves vapor-liquid-solid growth of single crystal silicon fibers and whiskers from silane gas and permits the use of other materials in the production of fibers by the vapor-liquid-solid process. The method provides an increase in the allowable ambient pressure and growth temperature and a large and more energy efficient growth velocity as compared to carbon dioxide based laser beam technology.