Abstract: To provide more space for additional circuit elements (coils, capacitors) and/or to allow the accommodation of additional circuit elements required for shielding the circuits, the metallization regions are arranged one over the other in at least two metallization layers. The carrier body has a surface on which sintered metallization regions are arranged in a first metallization layer, said metallization regions carrying electronic components and/or being structured such that the metallization regions form resistors or coils. The metallization regions are covered, together with the components and/or the resistors or coils, by a ceramic plate, and optionally additional metallization regions are arranged in additional metallization layers on the ceramic plate and each metallization region is covered by a ceramic plate. Sintered metallization regions are arranged in a metallization layer for the purpose of accommodating circuit elements on the uppermost ceramic plate facing away from the cooling elements.

Abstract: Stacked semiconductor die architectures having thermal spreaders disposed between stacked semiconductor dies and techniques of forming such architectures are described. The stacked semiconductor die architectures may be included in or used to form semiconductor packages. A stacked semiconductor die architecture can include: (i) a base die; (ii) a plurality of stacked semiconductor dies arranged on the base die; and (iii) at least one thermal spreader disposed in one or more gaps between the plurality of stacked semiconductor dies or in one or more areas on the base die that are adjacent to the plurality of stacked semiconductor dies. The thermal spreaders can assist with thermal management of the dies, which can assist with improving the power density of the stacked semiconductor die architecture. At least one other stacked semiconductor die architecture s also described.

Abstract: Embodiments herein may relate to a package that includes a package substrate with a first die on a first side of the package substrate and a second die on a second side of the package substrate. Solder balls may be coupled with the second side of the package substrate and the second die such that the solder balls are approximately coplanar. Other embodiments may be described and/or claimed.

Abstract: An electroluminescent light source including light-emitting diodes arranged on a substrate made of silicon. The light source integrates an electronic circuit performing a function that is necessary for controlling the light-emitting diodes.

Abstract: A semiconductor device includes: a frame; a first-external-terminal provided to a first side portion of the frame; a first substrate enclosed in the frame and having a first-conductive-layer at an upper surface; a first-semiconductor-element: mounted on the first-conductive-layer; having, on a lower surface, a first main electrode connecting with the first-conductive-layer; and having a second main electrode and a control electrode on an upper surface; a first terminal connecting portion establishing a connection between the first-external-terminal and an exposed portion of the first-conductive-layer between the first-semiconductor-element and the first-external-terminal; a first-external-control-terminal provided above a wire in the frame and between the first main electrode of the first-semiconductor-element and the first-external-terminal; and a first control terminal connecting portion establishing a connection: between the control electrode of the first-semiconductor-element and the first-external-contro

Abstract: To provide a pressure contact type semiconductor device stack which can uniformly pressurize pressure contact type semiconductor devices irrespective of presence or absence of a notch portion of the pressure contact type semiconductor device, and can prevent thermal destruction of the relevant pressure contact type semiconductor device.

Abstract: Provided is a technique of reducing detachment of a sealing resin in a semiconductor device, thereby achieving an increased improvement in lifetime of the semiconductor device. The semiconductor device includes the following: an insulating substrate; a metal block disposed on the upper surface of the insulating substrate; a semiconductor element mounted on the upper surface of the metal block; a case enclosing the semiconductor element, the metal block, and the insulating substrate; and a sealing resin sealing the semiconductor element and the metal block. The metal block includes at least one groove on a surface of the metal block, the surface being in contact with the sealing resin. The opening of the at least one groove has a width narrower than a width of the bottom surface of the at least one groove.

Abstract: A paste-like adhesive composition of the present invention contains metal particles (A) and a thermally polymerizable compound (B), in which the metal particles (A) form a particle coupling structure by causing sintering through a thermal treatment; when dynamic viscoelasticity of the composition is measured under a condition of a measurement frequency of 1 Hz, within a temperature region of 140° C. to 180° C., the composition has a temperature width of equal to or larger than 10° C. in which a shear modulus of elasticity is equal to or higher than 5,000 Pa and equal to or lower than 100,000 Pa; and an acetone insoluble fraction of a sample, which is obtained by removing the metal particles (A) and then heating the composition under conditions of 180° C. and 2 hours, is equal to or lower than 5% by weight.

Abstract: A cooling element comprising a cooling body, the cooling body comprising a first surface and a second surface, the first surface and the second surface being on the opposing sides of the body and the distance between the first and second surfaces defining the height of the cooling body, multiple of channels for cooling liquid arranged inside the cooling body, the channels extending in a longitudinal direction of the cooling body, wherein the channels are arranged in two layers in the direction of the height of the cooling body inside the cooling body and the cooling element is adapted to hold electronic components on the first surface and on the second surface for cooling electronic components on both surfaces.

Abstract: A method for making a ceramic heat sink is provided. In the first step of the method, a mixed material of nitrite-based ceramic powder, titanium powder and inorganic resin is prepared. The mixed material is then molded into a ceramic blank with a mold coated with titanium. Thereafter, the ceramic blank may be sintered to form the ceramic heat sink. Since the mixture and the mold both contain a common material of titanium, the molded ceramic blank can be easily removed from the mold in its integrity.

Abstract: A trim cooling assembly provides a sensible trim cooling capability for intake air provided to a downstream computing pod that includes an air cooling system that provides cooling air to computer systems in the pod. The air cooling system can evaporatively chill received intake air to provide the cooling air. The trim cooling assembly is mounted externally to the computing pod and upstream of the air cooling system and includes one or more trim cooling units that can be individually controlled to provide adjustable sensible chilling of the intake air. The trim cooling units and an evaporative cooling unit in the air cooling system can be controlled to provide various levels of sensible and evaporative cooling to maintain conditions of air downstream of the evaporative cooling unit within certain ranges. Trim cooling units can be progressively activated and de-activated in stages to provide progressively adjusted sensible cooling.

Abstract: A method of manufacturing a semiconductor device includes stacking a first substrate comprising a first surface having a semiconductor element and an opposing second surface and a second substrate comprising a third surface having a semiconductor element and an opposing fourth surface, forming a first contact hole extending from the second surface to the first surface of the first substrate and forming a first groove inwardly of a first region of the second surface of the first substrate by etching inwardly of the first substrate from the second surface thereof, forming a first patterned mask on the first substrate, so that the first groove is covered by the material of the first patterned mask, forming a first metal electrode in the first contact hole through an opening in the first mask as a mask, and removing the first mask and subsequently cutting through the first substrate in the first groove.

Abstract: Semiconductor device assemblies having stacked semiconductor dies and electrically functional heat transfer structures (HTSs) are disclosed herein. In one embodiment, a semiconductor device assembly includes a first semiconductor die having a mounting surface with a base region and a peripheral region adjacent the base region. At least one second semiconductor die can be electrically coupled to the first semiconductor die at the base region. The device assembly can also include an HTS electrically coupled to the first semiconductor die at the peripheral region.

Abstract: A cooling apparatus includes a discrete module and a plastic housing. The discrete module includes a semiconductor die encapsulated by a mold compound, a plurality of leads electrically connected to the semiconductor die and protruding out of the mold compound and a first cooling plate at least partly uncovered by the mold compound. The plastic housing surrounds the periphery of the discrete module. The plastic housing includes a first singular plastic part which receives the discrete module and a second singular plastic part attached to a periphery of the first plastic part. The second plastic part has a cutout which exposes at least part of the first cooling plate and a sealing structure containing a sealing material which forms a water-tight seal around the periphery of the discrete module at a side of the discrete module with the first cooling plate.

Abstract: A method of forming metallic pillars between a fluid inlet and outlet for two-phase fluid cooling. The method may include; forming an arrangement of metallic pillars between two structures, the metallic pillars are electrically connected to metallic connecting lines that run through each of the two structures, the arrangement of metallic pillars located between a fluid inlet and a fluid channel, the fluid channel having channel walls running between arrangements of the metallic pillars and a fluid outlet, whereby a fluid passes through the arrangement of metallic pillars to flow into the fluid channel.

Abstract: Provided are interconnect circuits for combined electrical and thermal energy transfer to devices connected to these circuits. Also provided are methods of fabricating such interconnect circuits. An interconnect circuit may include an electro-thermal conductor and at least one insulator providing support to different portions of the conductor with respect to each other. The insulator may include one or more openings for electrical connections and/or heat exchange with the electro-thermal conductor. The portions of the conductor may be electrically isolated from each other in the final circuit. Initially, these portions may be formed from the same conductive sheet, such as a metal foil having a thickness of at least about 50 micrometers. This thickness ensures sufficient thermal transfer in addition to providing excellent electrical conductance. In some embodiments, the conductor may include a surface coating to protect its base material from oxidation, enhancing electrical connections, and/or other purposes.

Abstract: A method and structure for packaging a semiconductor device are provided. In an embodiment a first substrate is bonded to a second substrate, which is bonded to a third substrate. A thermal interface material is placed on the second substrate prior to application of an underfill material. A ring can be placed on the thermal interface material, and an underfill material is dispensed between the second substrate and the third substrate. By placing the thermal interface material and ring prior to the underfill material, the underfill material cannot interfere with the interface between the thermal interface material and the second substrate, and the thermal interface material and ring can act as a physical barrier to the underfill material, thereby preventing overflow.

Abstract: A manufacturing method of a casing is provided. First, a plate, a frame and a main shell are provided, wherein the plate has an adhering region and at least one thermal fusion region, and the frame has a first surface and a second surface opposite to each other. Then, the plate is stacked on the first surface of the frame, wherein the thermal fusion region is overlapped with the frame, and the adhering region is not overlapped with the frame. The main shell is adhered to the adhering region of the plate and the second surface of the frame. The thermal fusion region is fixed to the frame by thermal fusion. In addition, a casing manufactured through the above-mentioned method is also provided.

Abstract: Embodiments relate to systems and methods for forming a circuit assembly for an electronic device. The circuit assembly may include a substrate and a group of surface-mounted electronic components disposed on a surface of the substrate. An electrical connector may be disposed on the surface and may be configured to receive an electrical connection from a separate electrical component or assembly. A molded layer may be formed over at least a portion of the surface fully encapsulating the group of surface-mounted electronic components and partially encapsulating the electrical connector.

Abstract: A power device supply includes an inverter, a converter, and a cooling system. The inverter is configured to convert direct electrical current into alternating electrical current. The converter has an inductor and is configured to amplify voltage. The cooling system has top, bottom, and intermediate cooling plates. The cooling system is arranged such that the inverter and inductor are interleaved with the plates and such that the inverter and inductor are disposed on opposing sides of the intermediate cooling plate.

Abstract: A light emitting diode module (LED includes a base, a light emitting unit, a heat dissipation portion located between the base and the light emitting unit, a lens located on the heat dissipation portion to receive the light emitting unit therein. The heat dissipation portion includes a main portion, a first connecting portion and a second connecting portion respectively located on both ends of the main portion. A drive receives in a cavity defined collectively by the main portion, the first connecting portion and the second connecting portion. The drive element is coupled with the light emitting unit and the base, the drive element.

Abstract: A power electronics assembly having a semiconductor device that includes a first device surface opposite a second device surface, a semiconductor substrate layer that extends from the first device surface to a substrate-drift interface, a semiconductor drift layer that extends from the substrate-drift interface towards the second device surface, and a semiconductor fluid channel is positioned within the semiconductor substrate layer of the semiconductor device. Further, the semiconductor fluid channel includes an inner surface. Moreover, a fluid channel metallization layer is positioned along the inner surface of the semiconductor fluid channel.

Abstract: A method for manufacturing a semiconductor device includes: providing a support with a semiconductor light-emitting element including a first electrode and a second electrode; providing a base including a first interconnect terminal and a second interconnect terminal; forming a first metal layer on the support to cover the first and the second electrodes; forming a second metal layer on the base to cover the first and the second interconnect terminals; arranging the first and second electrodes and the first and second interconnect terminals to respectively face each other, and providing electrical connection therebetween by atomic diffusion; and rendering electrically insulative or removing portions of the first metal layer and the second metal layer that are outside thereof defined between the first and second electrodes and the first and second interconnect terminals.

Abstract: A semiconductor device may include: a first and a second semiconductor elements each including electrodes on both surfaces thereof; a first and a second metal plates which interpose the first semiconductor element, the metal plates respectively being bonded to the first semiconductor element via first soldered portions; and a third and a fourth metal plates which interpose the second semiconductor element, the metal plates respectively being bonded to the second semiconductor element via second soldered portions; wherein a first joint is provided at the first metal plate, a second joint is provided at the fourth metal plate, the joints are bonded via a third soldered portion, and a solidifying point of the first soldered portions is higher than a solidifying point of the third soldered portion, and a solidifying point of the second soldered portions is higher than the solidifying point of the third soldered portion.

Abstract: A method of forming metallic pillars between a fluid inlet and outlet for two-phase fluid cooling. The method may include; forming an arrangement of metallic pillars between two structures, the metallic pillars are electrically connected to metallic connecting lines that run through each of the two structures, the arrangement of metallic pillars located between a fluid inlet and a fluid channel, the fluid channel having channel walls running between arrangements of the metallic pillars and a fluid outlet, whereby a fluid passes through the arrangement of metallic pillars to flow into the fluid channel.

Abstract: A semiconductor device includes: a first bidirectional switch element including a first gate electrode, a second gate electrode, a first electrode, and a second electrode; a first field-effect transistor including a third gate electrode, a third electrode, and a fourth electrode; and a second field-effect transistor including a fourth gate electrode, a fifth electrode, and a sixth electrode. The first electrode is electrically connected to the third gate electrode, the first gate electrode is electrically connected to the third electrode, the second electrode is electrically connected to the fourth gate electrode, the second gate electrode is electrically connected to the fifth electrode, and the fourth electrode is electrically connected to the sixth electrode.

Abstract: An inductor apparatus for a vehicle includes an inductor boosting member configured to boost an input voltage. An inductor case has an insertion groove configured to receive the inductor boosting member inserted thereinto. An inductor cover is configured to close the inductor case. A coolant case is provided on a bottom surface of the inductor case. The coolant case has a coolant passage formed therein. A coolant cover is configured to close the coolant case.

Abstract: A method of forming metallic pillars between a fluid inlet and outlet for two-phase fluid cooling. The method may include; forming an arrangement of metallic pillars between two structures, the metallic pillars are electrically connected to metallic connecting lines that run through each of the two structures, the arrangement of metallic pillars located between a fluid inlet and a fluid channel, the fluid channel having channel walls running between arrangements of the metallic pillars and a fluid outlet, whereby a fluid passes through the arrangement of metallic pillars to flow into the fluid channel.

Abstract: Apparatuses and methods for heat transfer from packaged semiconductor die are described. For example, an apparatus may include a plurality of die in a stack, and a barrier in close proximity to at least an edge of each of the plurality of die. The apparatus may further include fill material in spaces between adjacent die of the plurality of die and in between the plurality of die and the barrier.

Abstract: A semiconductor device includes a semiconductor module and a cooler. The semiconductor device includes semiconductor element(s) within a molded resin and a heat sink plate exposed on the molded resin. The cooler includes a cooling plate located on the heat sink plate of the semiconductor module via thermal grease. The cooling plate includes a bimetal structure in which two layers having different linear expansion coefficients are laminated. The heat sink plate includes a first facing surface facing the cooling plate and the semiconductor module is configured to thermally expand such that the first facing surface displaces with respect to the cooling plate. The cooling plate includes a second facing surface facing the heat sink plate, and the bimetal structure is configured to thermally expand such that the second facing surface of the cooling plate displaces in a same direction as the first facing surface of the heat sink plate.

Abstract: A method includes forming a through-via from a first conductive pad of a first device die. The first conductive pad is at a top surface of the first device die. A second device die is adhered to the top surface of the first device die. The second device die has a surface conductive feature. The second device die and the through-via are encapsulated in an encapsulating material. The encapsulating material is planarized to reveal the through-via and the surface conductive feature. Redistribution lines are formed over and electrically coupled to the through-via and the surface conductive feature.

Abstract: A light emitting device includes a base, at least one light emitting element, and a light transmissive sealing member. The base has a conductor wiring. The at least one light emitting element is mounted on the base. The at least one light emitting element is electrically connected to the conductor wiring. The light transmissive sealing member includes a light diffusion material. The light transmissive sealing member covers the at least one light emitting element. The light transmissive sealing member has a projection shape. The projection shape has a substantially circular bottom surface facing the base and a height in a light axis direction of the at least one light emitting element. The height is greater than a diameter of the substantially circular bottom surface.

Abstract: A heat radiating member includes a body region having a first main surface and a second main surface opposing each other and lateral surfaces connecting the first main surface and the second main surface and having concave surfaces, and a curved surface region formed to have a convex surface on an edge at which at least one of the first main surface and the second main surface meets one of the lateral surfaces.

Abstract: This cooling mechanism for a surface-mounted-type photoelectric conversion element is provided on a circuit board to which a surface-mounted-type photoelectric conversion element, which has a signal terminal that is connected to inner wiring and a terminal for fixation that is not connected to the inner wiring on a back surface thereof, is mounted, the cooling mechanism has a front-surface-side copper foil pattern to which the terminal for fixation is connected, a back-surface-side copper foil pattern, and a through-hole via which connects the copper foil patterns, a cooling member which is fixed to the circuit board so as to have contact with the back-surface-side copper foil pattern, and which cools the back-surface-side copper foil pattern.

Abstract: Embodiments of the invention are directed to an integrated circuit (IC) package assembly, including: one or more printed circuit boards (PCBs); and a set of chip packages, each including: an overmold; and an IC chip, overmolded in the overmold, and wherein: the chip packages are stacked transversely to an average plane of each of the chip packages, thereby forming a stack wherein a main surface of one of the chip packages faces a main surface of another one of the chip packages; and each of the chip packages is laterally soldered to one or more of said one or more PCBs and arranged transversally to each of said one or more PCBs, whereby an average plane of each of said one or more PCBs extends transversely to the average plane of each of the chip packages of the stack. Further embodiments are directed to related devices and fabrication methods.

Abstract: A lens for a light-emitting diode (LED) provides an even light pattern over a desired throw of light. An indentation on the top of the lens and a lens collector on the bottom are configured for a desired spread angle of light refracted an LED positioned on a circuit board below the light collector of the lens. One or more lenses may be formed in a lens unit for assembly with a circuit boards and molding into an LED module. The module may be used in sign cabinet and other lighting applications where LEDs are used as light sources.

Abstract: Embodiments include a semiconductor package comprising a first die having (i) a first side and (ii) a second side, wherein the first die comprises a first plurality of bond pads formed on the first side of the first die; a second die having (i) a first side and (ii) a second side, wherein the second die comprises a second plurality of bond pads formed on the first side of the second die, wherein the second die is stacked on the first die; a first plurality of metal posts formed on the first plurality of bond pads; a second plurality of metal posts formed on the second plurality of bond pads; and a redistribution layer configured to electrically couple (i) a first metal post of the first plurality of metal posts and (ii) a second metal post of the second plurality of metal posts.

Abstract: Disclosed herein is a composite magnetic sealing material includes a resin material and a filler blended in the resin material in a blend ratio of 50 vol. % or more and 85 vol. % or less. The filler includes a first magnetic filler containing Fe and 32 wt. % or more and 39 wt. % or less of a metal material composed mainly of Ni, the first magnetic filler having a first grain size distribution, and a second magnetic filler having a second grain size distribution different from the first grain size distribution.

Abstract: A sensor device includes a first substrate of semiconductor material having opposing first and second surfaces, photodetectors configured to receive light impinging on the first surface, and first contact pads each exposed at both the first and second surfaces and electrically coupled to at least one of the photodetectors. A second substrate comprises opposing first and second surfaces, electrical circuits, a second contact pads each disposed at the first surface of the second substrate and electrically coupled to at least one of the electrical circuits, and a plurality of cooling channels formed as first trenches extending into the second surface of the second substrate but not reaching the first surface of the second substrate. The first substrate second surface is mounted to the second substrate first surface such that each of the first contact pads is electrically coupled to at least one of the second contact pads.

Abstract: A semiconductor device includes an electronic component connected to a component pad of a wiring substrate, a connection member connected to a connection pad of the wiring substrate, and an encapsulation resin that encapsulates the electronic component and connection member. A wiring unit includes a first pad, embedded in the encapsulation resin, and a second pad, formed integrally with the first pad from the same metal. The second pad includes an external device connection surface located at a higher position than an upper surface of the encapsulation resin. A reinforcement plate includes a base, embedded in the encapsulation resin, and a heat dissipation portion, formed integrally with the base from the same metal. The first pad and the base each include a curved side surface that widens outwardly toward the upper surface of the encapsulation resin.

Abstract: The disclosed apparatus may include (1) a faceplate that facilitates at least one connection between at least one communication cable and a line card that forwards traffic in connection with a network, (2) at least one heatsink that (A) is integrated into the faceplate and (B) absorbs heat dissipated by at least one electronic component included in the line card, and (3) at least one mount that (A) is integrated into the faceplate and (B) enables the electronic component to attach to the heatsink. Various other apparatuses and systems are also disclosed.

Abstract: A composition capable of forming a heat-dissipation member having high thermal conductivity, and a heat-dissipation member. The composition for the heat-dissipation member of the present application contains a polymerizable liquid crystal compound having, at both terminals, a structure including an oxiranyl group or an oxetanyl group; a curing agent that cures the polymerizable liquid crystal compound; and an inorganic filler formed of nitride. A curing temperature of the composition for the heat-dissipation member is within or higher than the temperature range in which the polymerizable liquid crystal compound exhibits a liquid crystal phase, and within or lower than the temperature range in which the polymerizable liquid crystal compound exhibits an isotropic phase. The heat-dissipation member formed of such a composition can have excellent thermal conductivity owing to a synergistic effect between alignment of the liquid crystal compound and the inorganic filler formed of nitride.

Abstract: An electronic device according to the invention includes a second electronic device and a first electronic device removably connected with the second electronic device; the electronic device includes a first heat dissipation channel in the first electronic device and a second heat dissipation channel in the second electronic device. In a disconnected state, the heat dissipation airflow flows through the first heat dissipation channel to perform heat dissipation of the first electronic device. In a connected state, the first air inlet of the first heat dissipation channel communicates with the second air outlet of the second heat dissipation channel, and the heat dissipation airflow may enter into the first heat dissipation channel via the second heat dissipation channel so as to perform heat dissipation of the first electronic device by the second heat dissipation channel and the first heat dissipation channel.

Abstract: A structure for cooling an integrated circuit. The structure may include; an interposer cold plate having at least two expanding channels, each expanding channel having a flow direction from a channel inlet to a channel outlet, the flow direction having different directions for at least two of the at least two expanding channels, the channel inlet having an inlet width and the channel outlet having an outlet width, wherein the inlet width is less than the outlet width.

Abstract: A cooling apparatus is manufactured by: receiving a discrete module by a first singular part, the discrete module including a semiconductor die encapsulated by a mold compound, a plurality of leads electrically connected to the semiconductor die and protruding out of the mold compound, and a first cooling plate at least partly uncovered by the mold compound; attaching a second singular part to a periphery of the first part to form a housing, the housing surrounding a periphery of the discrete module, the second part having a cutout which exposes the first cooling plate and a sealing structure facing a side of the discrete module with the first cooling plate; and filling the sealing structure with a sealing material which forms a water-tight seal around the periphery of the discrete module at the side of the discrete module with the first cooling plate.

Abstract: A multilevel converter contains at least two submodules which are connected in a row. Each of the submodules contains at least two switches and a capacitor and two current-carrying outer module terminals. Accordingly, at least one of the submodules has at least one outer cooling member which acts as a current-carrying outer module terminal.

Abstract: A semiconductor device includes: a semiconductor element; a heat radiator body having a housing recess wherein a bottom surface of the housing recess is thermally connected to the upper surface of the semiconductor element; a heat sink which is thermally connected to an upper surface of the heat radiator body through adhesive agent; a sealing resin which covers the lower surface and a side surface of the heat radiator body, an inner side surface of the housing recess, and the lower surface and a side surface of the semiconductor element; and a wiring structure body formed on a lower surface of the sealing resin. The sealing resin includes a covering portion having an upper surface which is substantially flush with the bottom surface of the housing recess and covering the side surface of the heat radiator body. The adhesive agent contacts the side surface of the heat radiator body.

Abstract: A semiconductor device includes: a semiconductor substrate; a heat sink mounted on an upper surface of the semiconductor substrate; wirings formed on a lower surface of the semiconductor substrate; and the like. The heat sink is mounted on the upper surface of the semiconductor substrate, and a planar size thereof is approximately the same as that of the semiconductor substrate. Moreover, the heat sink has a thickness of 500 ?m to 2 mm, and may be formed to be thicker than the semiconductor substrate. By using the heat sink to reinforce the substrate, a thickness of the semiconductor substrate can be reduced to, for example, about 50 ?m. As a result, a thickness of the entire semiconductor device can be reduced.

Abstract: An object of the present invention is to provide a power module having high reliability. The power module according to the present invention, includes a circuit body and a case housing the circuit body. The case has a first case member including a first base plate and a second case member including a second base plate. The first case member has a first side wall portion formed in an arrangement direction of the first base plate and the second base plate. The second case member has a second side wall portion formed in the arrangement direction, the second side wall portion coupling to the first side wall portion. The first side wall portion and the second side wall portion are formed so as to have the sum of lengths of the first side wall portion and the second side wall portion in the arrangement direction smaller than the thickness of the circuit body. The first case member has a deforming portion smaller than the first base plate and the second base plate in rigidity.

Abstract: A programmable thermal sensor is implemented in an integrated circuit such as a microprocessor. The programmable thermal sensor monitors the temperature of the integrated circuit, and generates an output to indicate that the temperature of the integrated circuit has attained a pre-programmed threshold temperature. In a microprocessor implementation, the microprocessor contains a processor unit, an internal register, microprogram and clock circuitry. The microprogram writes programmable input values, corresponding to threshold temperatures, to the internal register. The programmable thermal sensor reads the programmable input values, and generates an interrupt when the temperature of the microprocessor reaches the threshold temperature. In addition to a programmable thermal sensor, the microprocessor contains a fail safe thermal sensor that halts operation of the microprocessor when the temperature attains a critical temperature.