Abstract: A sensor package, and in one embodiment a sensor package for surface mount applications, that comprises a leadframe with an upper and lower surface for receiving a device thereon. Embodiments of the sensor package comprise a first device secured to the upper surface, and a second device secured to the lower surface so as to place connective pads from each of the first device and the second device proximate to one side of the leadframe. The sensor package further comprises a lead that is positioned in the sensor package in a manner that prevents electrical connection with circuitry that is external of the housing. The lead has an end proximate the side of the lead frame where the connective pads are positioned on the upper and lower surfaces. The end configured to receive connections, e.g., wirebonds, from the connective pads in a manner connecting the first device and the second device independent of any external connections of the sensor package.

Abstract: A method for manufacturing a package-on-package system includes: providing an interposer substrate; mounting a base substrate under the interposer substrate and having a first integrated circuit die connected thereto; forming an encapsulant between the interposer substrate and the base substrate, the encapsulant encapsulating the first integrated circuit die; and forming a via z-interconnection extending through the encapsulant and one of the substrates to the other of the substrates.

Abstract: An interconnection is formed on an object having a step by a screen printing method. The interconnection is formed by printing it on a substrate having an upper stage surface and a lower stage surface. A multilayer interconnection structure having a plurality of layers which are stacked is formed by repeatedly performing a process of printing and drying an interconnection pattern on the lower stage surface. Then, when the height of the multilayer interconnection structure approaches the height of the upper stage surface, an interconnection pattern of the uppermost layer is printed on the multilayer interconnection structure to extend onto the upper stage surface. Because the interconnection pattern of the uppermost layer is printed in a smaller step, the print characteristic is good. Thus, by the printing, the interconnection structure is formed which has a narrow interconnection width and surely connects the upper surface and the lower surface in a larger step than the interconnection width.

Abstract: A wafer level integrated circuit assembly method is conducted as follows. First, a mother device wafer with plural first posts is provided. The first posts are used for electrical connection and are made of copper according to an embodiment. Solder is sequentially formed on the first posts. The solder is preferably pre-formed on a wafer, and the locations of the solder correspond to the first posts of the mother device wafer. Consequently, the solder can be formed on or adhered to the first posts by placing the wafer having pre-formed solder onto the first posts. Plural dies having plural second posts corresponding to the first posts are placed onto the mother device wafer. Then, the solder is reflowed to bond the first and second posts, and the mother device wafer is diced.

Abstract: A semiconductor device has a semiconductor die with a plurality of bumps formed over a surface of the first semiconductor die. A penetrable adhesive layer is formed over a temporary carrier. The adhesive layer can include a plurality of slots. The semiconductor die is mounted to the carrier by embedding the bumps into the penetrable adhesive layer. The semiconductor die and interconnect structure can be separated by a gap. An encapsulant is deposited over the first semiconductor die. The bumps embedded into the penetrable adhesive layer reduce shifting of the first semiconductor die while depositing the encapsulant. The carrier is removed. An interconnect structure is formed over the semiconductor die. The interconnect structure is electrically connected to the bumps. A thermally conductive bump is formed over the semiconductor die, and a heat sink is mounted to the interconnect structure and thermally connected to the thermally conductive bump.

Abstract: A wiring board includes a core substrate including an insulation base member; linear conductors configured to pierce from a first surface of the insulation base member to a second surface of the insulation base member; a ground wiring group including a first ground wiring formed on the first surface of the core substrate, and a belt-shaped second ground wiring formed on the second surface of the core substrate and electrically connected to the first ground wiring by way of a part of the linear conductors; and an electric power supply wiring group including a first electric power supply wiring formed on the first surface, and a second electric power supply wiring formed on the second surface and electrically connected to the first electric power supply wiring by way of a part of the plural linear conductors.

Abstract: An embedded semiconductor die package is made by mounting a frame carrier to a temporary carrier with an adhesive. The frame carrier includes die mounting sites each including a leadframe interconnect structure around a cavity. A semiconductor die is disposed in each cavity. An encapsulant is deposited in the cavity over the die. A package interconnect structure is formed over the leadframe interconnect structure and encapsulant. The package interconnect structure and leadframe interconnect structure are electrically connected to the die. The frame carrier is singulated into individual embedded die packages. The semiconductor die can be vertically stacked or placed side-by-side within the cavity. The embedded die packages can be stacked and electrically interconnected through the leadframe interconnect structure. A semiconductor device can be mounted to the embedded die package and electrically connected to the die through the leadframe interconnect structure.

Abstract: A method of manufacture an integrated circuit packaging system includes: providing a substrate; attaching a base component to the substrate by a first interconnect; attaching a stack component connected by a second interconnect to the substrate and partially over the base component, the second interconnect different from the first interconnect; molding an encapsulation over the base component, the first interconnect, the stack component, and the second interconnect; and removing the substrate to partially expose the first interconnect and the second interconnect from the encapsulation.

Abstract: A stack package includes a substrate having an upper surface and a lower surface which faces away from the upper surface, a lower stack group, an upper stack group, and connection members. The lower stack group is attached to the upper surface of the substrate and includes at least two semiconductor chips which are stacked in a face-up type to form on or more steps. The upper stack group is disposed over the lower stack group and includes at least two semiconductor chips which are stacked in a face-down type in such a way as to form one or more steps whose direction mirrors the direction of the at least one step of the lower stack group. The connection members electrically connect the semiconductor chips of the lower and upper stack groups to the substrate.

Abstract: A method of forming a device having an airbridge on a substrate includes forming a plated conductive layer of the airbridge over at least a photoresist layer on a portion of the substrate, the plated conductive layer defining a corresponding opening for exposing a portion of the photoresist layer. The method further includes undercutting the photoresist layer to form a gap in the photoresist layer beneath the plated conductive layer at the opening, and forming an adhesion layer on the plated conductive layer and the exposed portion of the photoresist layer, the adhesion layer having a break at the gap beneath the plated conductive layer. The photoresist layer and a portion of the adhesion layer formed on the exposed portion of the photoresist layer is removed, which includes etching the photoresist layer through the break in the adhesion layer. An insulating layer is formed on at least the adhesion layer, enhancing adhesion of the insulating layer to the plated conductive layer.

Abstract: An interconnect structure is provided that substantially eliminates electro-migration (EM) damage, a design structure and a method of manufacturing. The metal interconnect is formed in a dielectric material. A metal cap is selective to the metal interconnect. The metal cap includes RuX, where X is at Boron, Phosphorous or a combination of Boron and Phosphorous.

Abstract: A semiconductor structure includes a first die comprising a first substrate and a first bonding pad over the first substrate, a second die having a first surface and a second surface opposite the first surface, wherein the second die is stacked on the first die and a protection layer having a vertical portion on a sidewall of the second die, and a horizontal portion extending over the first die.

Abstract: A multi-chip package includes a substrate (110) having a first side (111), an opposing second side (112), and a third side (213) that extends from the first side to the second side, a first die (120) attached to the first side of the substrate and a second die (130) attached to the first side of the substrate, and a bridge (140) adjacent to the third side of the substrate and attached to the first die and to the second die. No portion of the substrate is underneath the bridge. The bridge creates a connection between the first die and the second die. Alternatively, the bridge may be disposed in a cavity (615, 915) in the substrate or between the substrate and a die layer (750). The bridge may constitute an active die and may be attached to the substrate using wirebonds (241, 841, 1141, 1541).

Abstract: A power semiconductor package structure includes a carrier, a first power chip, a second power chip, a first conductive sheet, a second conductive sheet and a third conductive sheet. The first power chip has a first surface and a second surface opposing to the first surface. A first control electrode and a first main power electrode are disposed on the first surface, and a second main power electrode is disposed on the second surface. The second surface is disposed on the carrier, and electrically connected to the carrier through the second main power electrode. The second power chip has a third surface and a fourth surface opposing to the third surface. A third main power electrode is disposed on the third surface, and a fourth main power electrode is disposed on the fourth surface. The fourth surface is disposed on the first power chip. The first conductive sheet is electrically connected to the first main power electrode and the fourth main power electrode.

Abstract: A three-dimensional stacked IC device has a stack of contact levels at an interconnect region. According to some examples of the present invention, it only requires a set of N etch masks to create up to and including 2N levels of interconnect contact regions at the stack of contact levels. According to some examples, 2x?1 contact levels are etched for each mask sequence number x, x being a sequence number for the masks so that for one mask x=1, for another mask x=2, and so forth through x=N. Methods create the interconnect contact regions aligned with landing areas at the contact levels.

Abstract: A multilayer wiring substrate mounted with an electronic component includes an electronic component, a core material layer having a first opening for accommodating the electronic component, a resin layer which is formed on one surface of the core material layer and which has a second opening greater than the first opening, a supporting layer which is formed on the other surface of the core material layer and which supports the electronic component, a plurality of connection conductor sections which are provided around the first opening and within the second opening on the one surface of the core material layer, bonding wires for electrically connecting the electronic component to the connection conductor sections, and a sealing resin filled into the first and second openings in order to seal the electronic component and the bonding wires.

Abstract: An integrated circuit pattern comprises a set of lines of material having X and Y direction portions. The X and Y direction portions have first and second pitches, the second pitch being larger, such as at least 3 times larger, than the first pitch. The X direction portions are parallel and the Y direction portions are parallel. The end regions of the Y direction portions comprise main line portions and offset portions. The offset portions comprise offset elements spaced apart from and electrically connected to the main line portions. The offset portions define contact areas for subsequent pattern transferring procedures. A multiple patterning method, for use during integrated circuit processing procedures, provides contact areas for subsequent pattern transferring procedures.

Abstract: This document discusses, among other things, apparatus and methods for an IC package including first and a second discrete components fabricated into a semiconductor substrate. The first and second discrete components can be adjacent to one another in the semiconductor substrate, and an integrated circuit die can be mounted on the semiconductor substrate and coupled to the first and second discrete components.

Abstract: A semiconductor package assembly has a first semiconductor package. A plurality of first solder balls is attached to the first semiconductor package. A circuit board is provided having a plurality of mounting pads that is electrically connected to the plurality of first solder balls. A first underfill is disposed on each of the plurality of first solder balls. The first underfill is disposed on interfaces between each of the plurality of first solder balls and the first semiconductor package and each of the plurality of first solder balls and the circuit board. The first underfill is removed from an area between adjacent first solder balls.

Abstract: A semiconductor package having improved EMI and crosstalk characteristics is provided. The semiconductor package includes a semiconductor package including a substrate, at least one first semiconductor chip formed on a top surface of the substrate and electrically connected to the substrate, and at least one second semiconductor chip formed on a top surface of the first semiconductor chip and electrically connected to the first semiconductor chip, wherein first and second conductive layers are formed on the top surfaces of the first semiconductor chip and the second semiconductor chip, respectively, and the first conductive layer and the second conductive layer are connected to a ground portion.

Abstract: There is provided a semiconductor device which makes equalization of wirings between address system chips easy and reduce the influence of crosstalk noise and capacitive coupling noise among data system wirings for connecting the chips. There are mounted, on a module board, a plurality of stacked memory chips which a data processor chip simultaneously accesses. Address system bonding pads to which a plurality of memory chips correspond are commonly coupled by a wire to a bonding lead at one end of the module board wiring whose other end is coupled by a wire to an address system bonding pads of the data processor. Data system bonding pads of the data processor chip are individually coupled to data system bonding pads of the memory chip.

Abstract: An integrated circuit package-on-package system includes: mounting an integrated circuit package system having a mountable substrate over a package substrate with the mountable substrate having a mold structure; forming a package encapsulation having a recess over the package substrate and the integrated circuit package system. The present invention also includes: forming an anti-mold flash feature with an extension portion of the package encapsulation and constrained by the mold structure at the bottom of the recess, and partially exposing the mountable substrate in the recess with the anti-mold flash feature formed with the mold structure; and mounting an integrated circuit device over the mountable substrate in the recess.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a base substrate having a base bottom side and a base top side; mounting an integrated circuit perpendicular to the base top side, the integrated circuit having a first conductor partially exposed at a first end facing and connected to the base top side; and forming an encapsulation over the integrated circuit.

Abstract: A method of fabricating an electrically conductive mechanical interconnection element (12) comprises: a first stage of electrochemically depositing a structure comprising a plurality of metal wires (2a) of sub-micrometric diameter projecting from the likewise metallic surface of a substrate (2); and a second stage of controlled partial dissolution of said wires to reduce their diameter. A method of making a mechanical and/or electrical interconnection, the method comprising the steps consisting in: fabricating two interconnection elements by a method as described above; and placing said interconnection elements face to face and pressing one against the other so as to cause the nanometric wires projecting from the surfaces of said elements to interpenetrate and tangle together. A three-dimensional electronic device comprising a stack of microelectronic chips mechanically and electrically connected to one another by such interconnection elements.

Abstract: An electronic device includes a first semiconductor device and a second semiconductor device. The first semiconductor device includes a first electronic component, a first sealing resin, and a first multilayer interconnection structure including a first interconnection pattern directly connected to a first electrode pad of the first electronic component. The second semiconductor device includes a second electronic component, a second sealing resin, and a second multilayer interconnection structure including a second interconnection pattern directly connected to a second electrode pad of the second electronic component. The first semiconductor device is stacked on and bonded to the second semiconductor device through an adhesive layer with the first multilayer interconnection structure of the first semiconductor device facing toward the second sealing resin of the second semiconductor device.

Abstract: A medical device includes a first substrate, a second substrate, a control module, and an energy storage device. The first substrate includes at least one of a first semiconductor material and a first insulating material. The second substrate includes at least one of a second semiconductor material and a second insulating material. The second substrate is bonded to the first substrate such that the first and second substrates define an enclosed cavity between the first and second substrates. The control module is disposed within the enclosed cavity. The control module is configured to at least one of determine a physiological parameter of a patient and deliver electrical stimulation to the patient. The energy storage device is disposed within the cavity and is configured to supply power to the control module.

Abstract: A device including a substrate; at least one semiconductor die on a first side of the substrate; and a mold cap molded on portions of the first side of the substrate and on lateral sides of the at least one semiconductor die. The mold cap is not molded onto a top side of the at least one semiconductor die.

Abstract: A semiconductor device includes a chip stacked structure. The chip stacked structure may include, but is not limited to, first and second semiconductor chips. The first semiconductor chip has a first thickness. The second semiconductor chip has a second thickness that is thinner than the first thickness.

Abstract: A stack semiconductor package includes a first insulation member having engagement projections and a second insulation member formed having engagement grooves into which the engagement projections are to be engaged. First conductive members are disposed in the first insulation member and have portions which are exposed on the engagement projections. Second conductive members are disposed in the second insulation member in such a way as to face the first conductive members and have portions which are exposed in the engagement grooves. A first semiconductor chip is disposed within the first insulation member and is electrically connected to the first conductive members. A second semiconductor chip is disposed in the second insulation member and is electrically connected to the second conductive members.

Abstract: An interposer has an opening in the central portion. A plurality of first electrode terminals are formed on the front surface near the opening of the interposer, a plurality of second electrode terminals are formed on the front surface of the peripheral portion thereof and corresponding ones of the plurality of first and second electrode terminals are electrically connected to one another via a plurality of wirings. A plurality of bump electrodes is formed on the front surface of a child chip. A plurality of bump electrodes containing a plurality of bump electrodes for connection with the exterior are formed on the front surface of a parent chip. The front surfaces of the parent chip and child chip are set to face each other with the interposer disposed therebetween and the bump electrodes are electrically connected to one another in the opening of the interposer.

Abstract: A semiconductor chip stack includes a first chip and a second chip. The first chip includes a first circuit formed in the first chip with a first integration density, and the second chip includes a second circuit in the second chip with a second integration density smaller than the first integration density. The first chip further includes at least a through-silicon via formed therein for electrically connecting the first chip and the second chip.

Abstract: A microelectronic assembly includes first and second stacked microelectronic elements, each having spaced apart traces extending along a front face and beyond at least a first edge thereof. An insulating region can contact the edges of each microelectronic element and at least portions of the traces of each microelectronic element extending beyond the respective first edges. The insulating region can define first and second side surfaces adjacent the first and second edges of the microelectronic elements. A plurality of spaced apart openings can extend along a side surface of the microelectronic assembly. Electrical conductors connected with respective traces can have portions disposed in respective openings and extending along the respective openings. The electrical conductors may extend to pads or solder balls overlying a face of one of the microelectronic elements.

Abstract: A packaging architecture for an integrated circuit is provided. The architecture includes a printed circuit board and a package substrate disposed on the printed circuit board. A first integrated circuit is disposed on a first surface of the package substrate. The package substrate is capable of supporting a second integrated circuit. The second integrated circuit is in electrical communication with a plurality of pads disposed on the first surface of the package substrate. Each of the plurality of pads is in electrical communication with the printed circuit board without communicating with the first integrated circuit.

Abstract: The semiconductor module includes a plurality of memory die on a first side of a substrate and a plurality of buffer die on a second side of the substrate. Each of the memory die is disposed opposite and electrically coupled to one of the buffer die.

Abstract: There is described a method of forming a through-silicon-via to form an interconnect between two stacked semiconductor components using pulsed laser energy. A hole is formed in each component, and each hole is filled with a plug formed of a first metal. One component is then stacked on another component such that the holes are in alignment, and a pulse of laser energy is applied to form a bond between the metal plugs.

Abstract: A packaged microchip has a base, at least one spacer coupled to the base, and first and second microchips mounted to the at least one spacer. The at least one spacer is configured to substantially prevent leakage current between the first and second microchips.

Abstract: A method, apparatus and system with an autonomic, self-healing polymer capable of slowing crack propagation within the polymer and slowing delamination at a material interface.

Abstract: A semiconductor device receiving as input a radio frequency signal having a frequency of 500 MHz or more and a power of 20 dBm or more is provided. The semiconductor device includes: a silicon substrate; a silicon oxide film formed on the silicon substrate; a radio frequency interconnect provided on the silicon oxide film and passing the radio frequency signal; a fixed potential interconnect provided on the silicon oxide film and placed at a fixed potential; and an acceptor-doped layer. The acceptor-doped layer is formed in a region of the silicon substrate. The region is in contact with the silicon oxide film. The acceptor-doped layer is doped with acceptors.

Abstract: A semiconductor device includes: a first semiconductor chip; and a second semiconductor chip that is stacked on the first semiconductor chip. The first semiconductor chip includes a first wiring portion of which a side surface is exposed at a side portion of the first semiconductor chip. The second semiconductor chip includes a second wiring portion of which a side surface is exposed at a side portion of the second semiconductor chip. The respective side surfaces of the first wiring portion and the second wiring portion, which are exposed at the side portions of the first semiconductor chip and the second semiconductor chip, are covered by a conductive layer, and the first wiring portion and the second wiring portion are electrically connected to each other through the conductive layer.

Abstract: The present invention relates to a semiconductor package and a method for making the same. The semiconductor package includes at least one first layer chip, a plurality of first metal bumps, at least one second layer chip and a package body. The first layer chip includes a first active surface and a plurality of first signal coupling pads. The first signal coupling pads are disposed adjacent to the first active surface. The first metal bumps are disposed on the first active surface of the first layer chip. The second layer chip is electrically connected to the first layer chip, and includes a second active surface and a plurality of second signal coupling pads. The second active surface faces the first active surface of the first layer chip. The second signal coupling pads are disposed adjacent to the second active surface, and capacitively coupled to the first signal coupling pads of the first layer chip, so as to provide proximity communication between the first layer chip and the second layer chip.

Abstract: A semiconductor memory card includes a wiring board which has a first pad region along a first long side and a second pad region along a second long side. First memory chips which configure a first chip group are stacked in a step-like shape on the wiring board. Second memory chips which configure a second chip group are stacked in a step-like shape on the first chip group with the direction reversed. The electrode pads of the first memory chips are electrically connected to the connection pads arranged on the first pad region, and the electrode pads of the second memory chips are electrically connected to the connection pads arranged on the second pad region.

Abstract: A method of assembling a semiconductor chip device is provided that includes placing an interposer on a first semiconductor chip. The interposer includes a first surface seated on the first semiconductor chip and a second surface adapted to thermally contact a heat spreader. The second surface includes a first aperture. A second semiconductor chip is placed in the first aperture.

Abstract: A method of assembling a semiconductor chip device is provided that includes providing a circuit board including a surface with an aperture. A portion of a first heat spreader is positioned in the aperture. A stack is positioned on the first heat spreader. The stack includes a first semiconductor chip positioned on the first heat spreader and a substrate that has a first side coupled to the first semiconductor chip.

Abstract: A semiconductor package of the present invention, includes a wiring substrate, a lead pin fixed to a connection pad on one surface side of the wiring substrate by solder, and a reinforcing resin layer formed on a surface of the wiring substrate on which the lead pin is provided and having a projection-shaped resin portion which projects locally around the lead pin and covers a side surface of a base portion side of the lead pin. The projection-shaped resin portion has a top surface extending from an outer peripheral portion of the lead pin to an outside, and a side surface constituting a non-identical surface to the top surface.

Abstract: A fabricating method of a semiconductor device is provided. Pillars are formed on a substrate. A first oxide layer is continuously formed on upper surfaces and side walls of the pillars by non-conformal liner atomic layer deposition. The first oxide layer continuously covers the pillars and has at least one first opening. The first oxide layer is partially removed to expose the upper surfaces of the pillars, and a first supporting element is formed on the side wall of each of the pillars. The first supporting element is located at a first height on the side wall of the corresponding pillar and surrounds the periphery of the corresponding pillar. The first supporting elements around two adjacent pillars are connected and the first supporting elements around two opposite pillars do not mutually come into contact and have a second opening therebetween.

Abstract: A method of manufacturing semiconductor device includes preparing a substrate having a first surface and a second surface opposite to the first surface. A first insulation layer is formed on the second surface. A sacrificial layer is formed on the first insulation layer. An opening is formed to penetrate through the substrate and extend from the first surface to a portion of the sacrificial layer. A second insulation layer is formed on an inner wall of the opening. A plug is formed to fill the opening. The sacrificial layer is removed to expose a lower portion of the plug through the second surface.

Abstract: This document discusses, among other things, an IC package including first and a second discrete components fabricated into a semiconductor substrate. The first and second discrete components can be adjacent to one another in the semiconductor substrate, and an integrated circuit die can be mounted on the semiconductor substrate and coupled to the first and second discrete components.

Abstract: An electronic apparatus and method of fabrication of the apparatus, the apparatus including a first electronic device having an interconnection surface with a first plurality of interconnection pads extending from the surface by a first distance and a second plurality of alignment posts extending from the surface by a second distance greater than the first distance, and a second electrical device having an interconnection surface with a first plurality of electrical interconnection pads, each pad arranged to contact a corresponding first electronic device interconnection surface pad upon assembly of the first electronic device interconnection surface upon the second electronic device interconnection surface, the second electronic device interconnection surface including a third plurality of alignment posts, each located to be adjacent to at least one of the first electronic device alignment posts upon assembly.

Abstract: Methods and apparatus to provide die backside metallization and/or surface activated bonding for stacked die packages are described. In one embodiment, an active metal layer of a first die may be coupled to an active metal layer of a second die through silicon vias and/or a die backside metallization layer of the second die. Other embodiments are also described.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a first board-on-chip-structure having a first integrated circuit die mounted over a substrate and the substrate having a substrate cavity; mounting a second board-on-chip-structure over the first board-on-chip-structure, the second board-on-chip-structure having a second integrated circuit die mounted under an interposer and the interposer having an interposer cavity; connecting the first board-on-chip-structure to the second board-on-chip-structure with an internal interconnect; and encapsulating the first board-on-chip-structure, the second board-on-chip-structure, and the internal interconnect with an encapsulation.