Abstract: Systems and methods are provided for double pass transistor logic with vertical gate transistors. The vertical gate transistors have multiple vertical gates which are edge defined such that only a single transistor is required for multiple logic inputs. Thus, a minimal surface area is required for each logic input. In one embodiment, a novel integrated circuits described in the present invention includes a number of input lines for receiving input signals and at least one output line for providing output signals. One or more arrays of transistors are coupled between the number of input lines and the at least one output line. Each transistor includes source region and a drain region in a horizontal substrate. A depletion mode channel region separates the source and the drain regions. A number of vertical gates located above different portions of the depletion mode channel region.

Abstract: A circuit which allows for a more efficient pre-emphasis of a high frequency inter-chip signal. The circuit uses a single predriver stage to equalize a signal when a transition in value of a digital signal is detected. The circuit equalizes the signal with decreased power and area requirements for greater efficiency.

Abstract: There is disclosed a programmable driving circuit for being applied in an organic light emitting diode display panel. The driving circuit has a plurality of driver cells, each comprising a switch transistor, a current output transistor, a discharge transistor, and a plurality of multiplexers each for selecting the row driving inputs, column driving inputs, and required bias outputs. By controlling the control terminals of the multiplexers for performing switching controls, the driving circuit is programmed.

Abstract: A domino logic circuit and circuit family is disclosed that has reduced the capacitance on the evaluation node for increased performance. The domino logic circuit preferably includes an inverter, a pre-charge transistor, a logic block, and a pre-charge control transistor. One or both of the clocked transistors of conventional domino logic circuits are removed, and a single clocked transistor that controls the logic state of the output of the inverter is provided. This arrangement reduces or eliminates the series resistance in line with the logic block, reduces or eliminates the capacitance contributed by the clocked pre-charge transistor of conventional domino logic circuits, and reduces the size and thus the capacitance contributed by one or more of the transistor of the inverter.

Abstract: A latch having a pass gate, multiple clock paths connected to the pass gate, and a data path connected to the pass gate, wherein the data path and the multiple clock paths have the same number and types of elements.

Abstract: A logic circuit cell has a logic element and a buffer circuit. The logic element performs a logic function. The logic element is comprised of first transistors having a first threshold voltage. The buffer circuit is connected to an output terminal of the logic element. The buffer circuit is comprised of second transistors having a second threshold voltage lower than the first threshold voltage. The buffer circuit receives an output of the first transistors in the logic element and controls the output.

Abstract: A static logic circuit with a pull-up network (155) and a pull-down network (160). The network is fabricated on SOI substrates and the pull-up network comprises at least one NMOS transistor (115) and the pull down network comprises at least one PMOS transistor (120).

Abstract: A semiconductor integrated circuit in which a logic and a memory are merged, includes a voltage generation unit for generating two or more internal power supply voltages based on two or more external power supply voltages supplied from outside the voltage generation unit with different timings and for furnishing the plurality of internal power supply voltages to the memory. The voltage generation unit includes a standby unit with a small current-feed ability that is always activated, for generating the plurality of internal power supply voltages, and an active unit with a large current-feed ability that is activated as needed, for generating the plurality of internal power supply voltages. An activation control unit prevents the active unit from being activated until all of the plurality of external power supply voltages rise.

Abstract: A two-input logic gate circuit suitable for extremely high-speed operation, which operates on two differential signal pairs expressing respective logic inputs, includes a control signal generating circuit which converts the input differential signal pairs to two sets of differential control signal pairs respectively having first and second level ranges, to be supplied to a current switching section.

Abstract: A hotplug tolerant I/O circuit, which is incorporated in a first device, includes a voltage generator. In a hotplug mode, in which an input signal higher than the power supply voltage is applied from a second device to the first device while the power supply voltage is not applied to the first device, the voltage generator generates a control voltage from the input signal, and supplies it to a transistor in the hotplug tolerant I/O circuit. This makes it possible to solve a problem of a conventional hotplug tolerant I/O circuit in that the transistors in the I/O circuit can be damaged in the hotplug mode.

Abstract: This application proposes a new logic circuit including the 1st selector (S1) in which the control input S is controlled by the first input signal (IN1), the input I1 or I0 is controlled by the second input signal (IN2), and the output O is connected to the first node (N1), and the 3rd selector (S3) in which the control input S is controlled by the first node (N1), the input I1 is controlled by the third input signal (IN3), the input I0 is controlled by the first input signal (IN1), and the output is connected to the first output signal (OUT1).

Abstract: Disclosed is a semiconductor integrated circuit realizing improved operating speed, reduced power consumption in an active mode, reduced power consumption in a standby mode, and reduced area of a chip. A first logic gate using a first pair of potentials VDDL, VSSL having a relatively small potential difference as an operation power source and a second logic gate using a second pair of potentials VDDH, VSSH having a relatively large potential difference as an operation power source commonly use substrate potentials VBP, VBN of MIS transistors. The second logic gate has a relatively high driving capability, and the first logic gate can operate on relatively low power. The MIS transistor has a threshold voltage which increases by a reverse substrate bias and decreases by a forward substrate bias. By commonly using the substrate potential, even in the case where different substrate bias states are generated at both of the logic gates, MOS transistors of the logic gates can be formed in the common well region.

Abstract: A self-timed pipelined datapath system reduces its power dissipation by accurately controlling the active and inactive states of the multi-threshold CMOS (MT-CMOS) circuit used as its combinational circuit. The MT-CMOS circuit comprises a logic circuit of low-threshold and a power control circuit formed of high-threshold transistors for controlling the power feeding to the logic circuit. The self-timed pipelined datapath system comprises: a pipelined datapath circuit including a plurality of data processing stages, each having a combinational circuit for processing input data and a register connected to the input side of the combinational circuit; and an asynchronous signal control circuit that controls data transmission to and from each of the registers in the pipelined datapath circuit in response to a request signal.

Abstract: A MOS logic circuit includes: a pass-transistor logic circuit, including at least one first MOS transistor, for performing a predetermined logic operation to provide an output; and an amplifying circuit, including at least one second MOS transistor, for enhancing a driving capability of the output of the pass-transistor logic circuit. Each of the first MOS transistor and the second MOS transistor is a DTMOS transistor having a gate connected to an associated well in which a channel thereof is formed.

Abstract: A complementary source coupled logic topology suitable for low voltage differential signaling is disclosed. The topology is referred to as complementary source coupled logic as it contains complementary differential paris and complementary source follows. The complementary differential pair provide low voltage swing, low gain, high bandwidth signaling with rail-to-rail input common-mode range. The complementary source followers combine and buffer the outputs of complementary differential pairs preserving the low voltage swing, low gain and high bandwidth.

Abstract: There is provided a logic circuit causing the same delay time as a conventional logic circuit and acting as a D flip-flop circuit with a data-selecting function. A logic circuit having the circuitry shown in FIG. 6 will be described briefly. Two transmission gates TG10a (TG10b) and TG11 and two inverters IV10 and IV11 are used to define a data propagation path from an input port I1 (I2) to an output port O1. Thus, four logic gates are located along the path in the same manner as they are in a conventional D flip-flop circuit. The transmission gate TG10a (TG10b) is controlled using a NOR circuit 12a that inputs a clock CLK and a select signal /sel that is the reverse of a select signal sel (NOR circuit 12b that inputs the clock CLK and the select signal sel). The transmission gate TG11 is controlled with the clock CLK. Either of two input data items is selected based on the select signals, and then output.

Abstract: In order to produce a logic circuit excellent in circuit characteristics which are area, delay time and power consumption by combining pass transistor logic circuits and CMOS logic circuits, a binary decision diagram is created from a Boolean function, and respective nodes of the diagram are mapped into 2-inut, 1-output, 1-control input pass transistor selectors to synthesize a pass transistor logic circuit. In the pass transistor logic circuit, a pass transistor selector operating as a NAND or NOR logic with any one of its two inputs excluding the control input being fixed to a logical constant “1” or “0” is replaced with a CMOS gate operating as a NAND or NOR logic logically equivalent to the pass tansistor selector if the value of a predetermined circuit characteristic obtained by the replacement is closer to an optimal value (if the resulting logic circuit is smaller in area, delay time or power consumption than the original pass transistor logic circuit).

Abstract: A system of logic modules providing AND, OR and NOT logical elements most useful in education and entertainment situations where it is important to avoid excessive costs and where speed is not a requirement utilizes electrical continuity and a lack of electrical continuity between pairs of electrical conductors to represent predetermined values of logical variables.

Abstract: A method and apparatus for implementing dynamic logic with programmable dynamic logic gates acts as a complement to programmable logic arrays (PLAs) used in high-speed microprocessor designs. A matrix of selectable cells provides powerful logic functions such as AND-OR gate capability with a minimum of inputs and transistors. By using programmable logic arrays and programmable dynamic gates, the efficiency of a logic block can be dramatically improved with little added circuit area.

Abstract: A logic circuit (200) having a critical path input signal (C2) that can have a reduced input capacitance and a logic output (D2) that can have a reduced voltage swing is disclosed. According to one embodiment, the logic circuit may include an input circuit (210), a driver circuit (220), and a load circuit (230). Driver circuit (220) can include stacked transistors (N4 and N5) of the same conductivity type, which can generate a logic output (D2) that can have a reduced voltage swing. Driver circuit (220) can generate a feedback signal that can control the impedance of a load circuit (230). Load circuit (230) can be actively controlled to improve the response of a logic evaluation node (V2).

Abstract: A logic circuit determines the logic based only on a change in electric current. The logic circuit comprises a logical value determination circuit, a reference current generator, and a current sense amplifier. The logical value determination circuit defines a logical current flowing in response to multiple logic-signals. The reference current generator produces a reference current which is used to determine whether the logical current defined by the logical value determination circuit is true or false. The current sense amplifier detects and amplifies a difference between the logic current and the reference current.

Abstract: In a dynamic logic circuit, a signal delay time between a low-to-high transition of an input signal and a low-to-high transition of an output signal is reduced, a through current is decreased and a time required for the precharge is reduced. In the dynamic logic circuit a P-channel type MOS transistor (PMOS) has its source electrode connected with a power supply on the side of a high voltage potential Vdd. Its gate electrode receives a clock signal Cs. A logic portion includes N-channel type MOS transistors (NMOS) connected between a drain electrode of the PMOS and a power supply on the side of a low voltage potential Vss. An NMOS is provided between an input signal connected with a NMOS closest to the Vss in the NMOSs and the Vss. A reverse signal of the clock signal Cs is connected with a gate electrode of the NMOS. An input signal is forced to change to a low level at the time of the precharge, thereby a through current is decreased and a time required for the precharge is reduced.

Abstract: A CMOS OR circuit is fast and has a reduced sensitivity to the variations in the process, temperature and voltage supply. When the input signal to any one of a plurality of select transistor is in a logic high, a fixed supply of current is provided to the common drain terminal of the select transistors thereby to limit the amount of voltage swing of the common drain terminal and the common source terminal of the select transistors. A maximum power sensor senses the voltage differential developed between the common drain and the common source terminals of the select transistors and in response thereto generates a control signal which varies the amount of current that a variable current supply delivers to the common drain terminal thereby to prevent the output signal of the OR circuit from switching to the wrong state.

Abstract: A high speed, multiple input restrictive OR circuit with fully differential inputs and output is used in applications in which only one input can be active at a time. N differential voltage inputs are converted into N corresponding differential current signals of unit current values. The current signals corresponding to active complement input signals are summed together, with a compensation current equal to (N−1) current units subtracted from the total. The resulting compensated complement currents together with any active input current form a single differential current that indicates the logic state at the input. This differential current is preferably converted to a buffered output differential voltage in an output stage. For high accuracy applications, a common unit reference current is used to generate both a scaled compensation current and unit input stage source currents.

Abstract: For the relation between the first and second pass-transistor circuits (PT1, PT2), the output signal of the preceding-stage is supplied to the gate of the succeeding-stage, and for the relation between the second and third pass-transistor circuits (PT2, PT3), the output signal of the preceding-stage is supplied to the source-drain path of the succeeding-stage. The first pass-transistor circuit (PT1) receives on its first input node (In1) and second input node (In2) the first input signal and the second input signal that are logically independent from each other. This logic circuit requires a smaller number of transistors and is capable of reducing the power consumption and delay and accomplishing an intricate logic function.

Abstract: A circuit for, and method of, decreasing DC power dissipation in a logic gate and a processor incorporating the circuit or the method. In one embodiment, wherein the logic gate has at least two binary inputs adapted to receive corresponding input binary digits, the circuit includes: (1) a combinatorial logic power down circuit that develops a power down signal as a function of an input-data signal and at least one of the input binary digits and (2) a switch, coupled to the power down circuit, that interrupts DC current to at least a portion of the logic gate as a function of the power down signal.

Abstract: A comparator which improves a comparing speed and has a simple logic circuit compared to the conventional adder or subtracter includes: a plurality of pre-comparing units for comparing two inputs A, B by dividing each of the inputs by 4 bits; a selection logic unit for receiving an equality signal among signals from the pre-comparing units and outputting a selection enable signal; a plurality of pass logic units enabled by the selection enable signal of the selection logic unit and outputting outputs of the pre-comparing units and the input A; and a post-comparing unit for receiving and comparing a 4-bit output of the pre-comparing units which is outputted through the enabled pass logic units and the input A.

Abstract: A semiconductor integrated circuit including a logic circuit is disclosed, in which the decoder area can be reduced and which has an effect of reduction of the whole chip size. Among the MOS FETs included in the logic circuit, those other than a MOS FET for supplying electric charges via an output terminal have threshold voltage values lower than the threshold voltage value of the MOS FET for supplying electric charges. The direction of the gate width of each MOS FET is perpendicular to the direction along which word lines extend in the memory cell areas, and all of the MOS FETs are aligned in a direction perpendicular to the direction along which the word lines extend.

Abstract: The present invention relates to an inverter for outputting high voltage in use of CMOS transistors of low voltage, more particularly, to a circuit generating a high voltage output without subsidiary shield voltage.

Abstract: A domino logic circuit (18) comprising a first phase domino logic circuit (20) operable in a precharge phase and an evaluate phase. The first phase domino logic circuit comprises a precharge (20PN) node operable to change states. The domino logic circuit also comprises a second phase domino logic circuit (22) operable in a precharge phase and an evaluate phase, wherein the precharge phase and the evaluate phase of the first phase domino logic circuit are out of phase with respect to the precharge phase and an evaluate phase of the second phase domino logic circuit. Further, the second phase domino logic circuit comprises a precharge node (22PN) operable to change states in response to the states of the first phase domino logic circuit.

Abstract: In a DCFL circuit, a high-speed operation is conducted in a stable state regardless of its load capacitance. The circuit includes a buffer circuit. Added to the buffer circuit is a pull-up circuit conducting a pull-up operation for a predetermined period of time when an output potential of the circuit changes from a low level to a high level. A first EFET of the pull-up circuit includes a gate electrode connected to an output terminal of a logic stage, a drain electrode coupled with a positive power source, and a source electrode linked with a drain of a second EFET. The second EFET includes a gate electrode connected to a node linked in series to a resistor element. The resistor is coupled with an input terminal. The second EFET includes the drain electrode connected to a source electrode of the first EFET and a source electrode linked with an output terminal.

Abstract: A method is provided for precharging a node in an integrated circuit in which the node is precharged a first predetermined delay after the node evaluates and, thereafter, the precharge ceases after a second shorter predetermined delay.

Abstract: A single-rail input to dual-rail output conversion circuit suitable for a domino logic hold-time latch. The conversion circuit integrates the two circuit functions in the same circuit block. The circuit involves minimal circuit complexity including a single additional transistor. This circuit eliminates a problem of false output of the prior art.

Abstract: A logic circuit performs a predetermined logic operation by supplying charge to an external load or pulling out charge therefrom according to a combination of the states of a plurality of externally inputted binary signals. The logic circuit includes a first transistor for supplying charge through an output terminal to the external load and a second transistor for pulling out the charge from the load through the output terminal. One of the first and second transistors is constituted by a MOS field-effect transistor having a drain connected to the output terminal. The MOS field-effect transistor has a source receiving an inverse signal inverse to a signal combined for logic operation with an input signal inputted to a gate of the MOS field-effect transistor. The number of the series transistors is reduced, resulting in an increase of the current capacity and in a reduction of the layout area.

Abstract: The differential mode gate includes a first load resistance having a first current driving capability. The first load resistance is connected to a power supply voltage. A constant current source, having a second current driving capacity, is connected to ground. A first logic gate is connected between the first load resistance and the constant current source. The first logic gate performs a first logic operation on received inputs to generate a first output. The differential mode gate additionally includes a second load resistance and a second logic gate. The second load resistance has a third current driving capability and is connected to the power supply voltage. The second logic gate is connected between the second load resistance an the constant current source, and performs a second logic operation on the received inputs to generate a second output.

Abstract: A data transfer device having a post charge logic circuit which utilizes signals on a pair of data lines performs a post charge operation on the other a plurality of data line pairs. A data transfer device uses only signals on a pair of data lines to perform the post charge operation to the other data lines, thereby reducing the area of the memory device.

Abstract: Low power CMOS circuit provided with CMOS devices, is disclosed, for minimizing a power consumption in a standby mode, including PMOS transistors having drains connected to a power supply voltage and NMOS transistors having sources connected to a ground voltage, both of the PMOS transistors and the NMOS transistors being adapted to be applied of a back bias voltage in a standby mode, wherein the PMOS transistors and the NMOS transistors are formed to have high gamma factors.

Abstract: A Transfer Logic Cell (TLC) circuit performing non-boolean logic elementary operations between a dual-rail input and a dual-rail output upon assertion of signals on at least one control terminal to operate said circuit into one of four logic modes of operation i.e. a ‘PASS’, ‘LEFT’, ‘CROSS’ or ‘RIGHT’ mode or in one of two non-logic modes i.e. ‘ISOLATION’ or ‘TRANSPARENT’ mode or in any subset of combinations of the herein above modes. And a method for assembling a plurality of TLC circuits to carry out logic functions in an array-like structure.

Abstract: A semiconductor integrated circuit is constructed with composite pass-transistor logic circuits serving as elementary circuit units each including a plurality of pass-transistor logic trees and a multiple-input logic gate. A wide variety of logical operations, even complex opearations, can be efficiently expressed using the composite pass-transistor logic circuit, and the resultant logic circuit can operate at a high speed. Thus, the semiconductor integrated circuit of the present invention can realize various logic functions required for various users in an efficient fashion. The present invention is particularly useful when applied to a field-programmable gate array integrated circuit, since complex logical operations can be expressed in a simple and efficient fashion by the composite pass-transistor logic circuits. The gate array integrated circuit obtained in accordance with the present invention can operate at a high speed with low power consumption.

Abstract: An output synchronization-free NOR gate detects the all-zero scenario for an n-bit word. The n-bit word having a selected bit that is defined using a high-inactive convention, and (n−1) non-selected bits that are defined using a high-active convention. The NOR gate includes an output FET, a pre-charging circuit, a first evaluation circuit, and (n−1) second evaluation circuits. The pre-charging circuit charges the output FET gate, drain, and source to a pre-charge voltage during a low clock cycle. During a clock high cycle, the first evaluation circuit evaluates the selected bit and discharges the pre-charge voltage on the output FET source if the selected bit is a voltage high. The (n−1) second evaluation circuits evaluate the non-selected bits and maintain the pre-charge voltage on the output FET gate if each of the non-selected bits is a voltage low. The output FET conducts if the pre-charge voltage is maintained on the output FET gate and if the output FET source is discharged to ground.

Abstract: An hysteresis input buffer includes a first CMOS inverter generating a node signal, a second CMOS inverter coupled to the first CMOS inverter, inverting the node signal from the first CMOS inverter, and producing an intermediate signal, and a hysteresis control circuit coupled to the second CMOS inverter, receiving the intermediate signal, and producing an output signal having a low level during a predetermined delay time and a high level after the predetermined delay time has elapsed.

Abstract: A voltage detector circuit discriminates between a 13 volt Programming signal and a 6 volt signal without creating a field across the gate oxide of a sensing transistor in excess of 7.0 MegaV/cm. A PMOS transistor has a source terminal and a substrate terminal connected, both connected to the input terminal, A gate terminal is connected to a VCC voltage level. A shunt NMOS transistor has a drain terminal connected to the drain terminal of the PMOS transistor and a source terminal connected to a ground terminal. A gate terminal of the shunt NMOS transistor is connected to the VCC voltage level. The NMOS transistor is turned on to provide a shunt resistance between the drain terminal of the PMOS transistor and ground. A drain terminal of a series NMOS transistor is connected to the drain terminal of the PMOS transistor. A gate terminal of the series NMOS transistor is connected to VCC. The source terminal of the series NMOS transistor is connected to a sensing output terminal.

Abstract: An attenuator unit for attenuating a signal, the unit includes a &pgr;-type attenuator having a first resistor and second and third resistors which are arranged on both sides of the first resistor, a first transistor connected in parallel with the first resistor, and a second transistor connected between a joint node of the second resistor and the third resistor and a first voltage level. In the unit, by controlling a gate voltage of the first transistor and a gate voltage of the second transistor, an attenuation value of the attenuator unit is changed.

Abstract: A method and apparatus for detecting whether dynamic logic circuits are precharging properly. The method and apparatus uses a narrowed reset pulse to verify precharging is occurring as designed.

Abstract: An output buffer has internal circuitry connected between an input node and an output node. The internal circuitry includes a quiet voltage supply connected to a first set of transistors of the internal circuitry and a noisy voltage supply connected to a second set of transistors of the internal circuitry. The noisy voltage supply is at a voltage level higher than the quiet voltage supply. The first set of transistors and the second set of transistors provide isolation between the noisy voltage supply and the quiet voltage supply. The first set of transistors and the second set of transistors also provide complete digital high and low internal signal levels by using at least one transistor operative to supplement the complete shut-off and turn-on of transistors of the first set of transistors and the second set of transistors.

Abstract: A two-phase dynamic logic circuit for complementary GaAs HIGFET fabrication processes has a precharge transistor connected between a precharge volt source and an output node of the logic circuit. The precharge transistor is controlled by a clock signal such that the output node precharges when the clock signal is low and is isolated from the precharge voltage source when the clock signal is high. An evaluate transistor connected to the output node and an NFET logic block has a first terminal connected to the evaluate transistor such that the evaluate transistor is between the NFET logic block and the output node. A second terminal of the logic block is connected to a voltage source and a data input terminal that is arranged to receive data input signals. The NFET logic block includes on or more transistor(s) is arranged to generate a logic value.

Abstract: A dynamic set/reset circuit is provided with a first feedback line and a second feedback line. The first feedback line provides an interlocked feedback signal which permits high frequency operation of the set/reset circuit. The second feedback line prevents the interlocked feedback signal from causing the circuit to improperly change state until the next cycle of the circuit. In this manner, the circuit will operate properly despite an unexpectedly wide pulse on an input line. The dual feedback can be used on the set or reset inputs of a set/reset circuit, or both, and the set/reset circuit can be used in various logic and high speed applications, such as within a microprocessor.

Abstract: A MOS logic circuit includes: a pass-transistor logic circuit, including at least one first MOS transistor, for performing a predetermined logic operation to provide an output; and an amplifying circuit, including at least one second MOS transistor, for enhancing a driving capability of the output of the pass-transistor logic circuit. Each of the first MOS transistor and the second MOS transistor is a DTMOS transistor having a gate connected to an associated well in which a channel thereof is formed.

Abstract: The selector circuit rapidly steers an event from a single input to one of two outputs depending on the binary value of a data signal controlling the selector, where events are received at an event input. A selection value, placed at a control input causes the selector circuit to steer the event to one of the outputs. For each change of value at the event input, one or the other of the outputs will change. Which output changes is determined by the selection value applied to the control input. The selector circuit uses variable or dynamic capacitances at the outputs to control which one of the outputs changes in response to an input event. Each node of the selector circuit includes a true line and a complement line. Pass gates are used to either couple the true lines of the outputs together or to couple the true line of each output and the complement line of the other output.

Abstract: A self-timed pipelined datapath system reduces its power dissipation by accurately controlling the active and inactive states of the multi-threshold CMOS (MT-CMOS) circuit used as its combinational circuit. The MT-CMOS circuit comprises a logic circuit of low-threshold and a power control circuit formed of high-threshold transistors for controlling the power feeding to the logic circuit. The self-timed pipelined datapath system comprises: a pipelined datapath circuit including a plurality of data processing stages, each having a combinational circuit for processing input data and a register connected to the input side of the combinational circuit; and an asynchronous signal control circuit that controls data transmission to and from each of the registers in the pipelined datapath circuit in response to a request signal.