Abstract: An auto-precharge signal generation circuit comprises a signal generator, a set signal generator, and an auto-precharge signal generator. The signal generator is configured to generating a control signal and a precharge control signal in response to receiving a first column address strobe signal and an auto-precharge flag signal. The set signal generator is configured to generating a set signal in response to receiving the control signal and the precharge control signal. The auto-precharge signal generator is configured to generate an auto-precharge signal in response to receiving the set signal and a period set signal.

Abstract: Certain embodiments described herein include a memory module having a printed circuit board including at least one connector configured to be operatively coupled to a memory controller of a computer system. The memory module further includes a plurality of memory devices on the printed circuit board and a circuit including a first set of ports operatively coupled to at least one memory device. The circuit further includes a second set of ports operatively coupled to the at least one connector. The circuit includes a switching circuit configured to selectively operatively couple one or more ports of the second set of ports to one or more ports of the first set of ports. Each port of the first set and the second set comprises a correction circuit which reduces noise in one or more signals transmitted between the first set of ports and the second set of ports.

Abstract: A memory including a memory cell array, a word line decoder, a first and a second reference bit line generators are provided. The memory cell array has first and last bit lines respectively disposed at two sides of the memory cell array. The word line decoder generates a pre-word line signal. The first and the second reference bit line generators respectively detect voltage level variations of the first and last bit lines according to the pre-word line signal, so as to generate a first and a second cut-back signals. The first reference bit line generator transmits the first cut-back signal to the second reference bit line generator, the second reference bit line generator transmits the first and the second cut-back signals to the word line decoder, and the word line decoder generates a word line signal according to the first and the second cut-back signals and the pre-word line signal.

Abstract: Various embodiments of a nonvolatile memory apparatus configured to operate in a first operation mode and a second operation mode are disclosed. In one exemplary embodiment, the apparatus may include: a controller configured to enable complementary signal input/output buffers in response to a command for entry into the first operation mode and disable the complementary signal input/output buffers in response to a command for transition to the second operation mode while operating under the first operation mode.

Abstract: A non-volatile semiconductor device has a memory cell array having electrically erasable programmable non-volatile memory cells, reprogramming and retrieval circuits that temporarily store data to be programmed in the memory cell array and sense data retrieved from the memory cell array. Each reprogramming and retrieval circuit has first and second latches that are selectively connected to the memory cell array and transfer data. A controller controls the reprogramming and retrieval circuits on a data-reprogramming operation to and a data-retrieval operation from the memory cell array. Each reprogramming and retrieval circuit has a multilevel logical operation mode and a caching operation mode. In the multilevel logical operation mode, re-programming and retrieval of upper and lower bits of two-bit four-level data is performed using the first and the second latches to store the two-bit four-level data in one of the memory cells in a predetermined threshold level range.

Abstract: Embodiments of the invention relate generally to semiconductors and memory technology, and more particularly, to systems, integrated circuits, and methods to generate access signals to facilitate memory operations in scaled arrays of memory elements, such as memory implemented in third dimensional memory technology formed BEOL directly on top of a FEOL substrate that includes data access circuitry. In at least some embodiments, a non-volatile memory device can include a cross-point array having resistive memory elements disposed among word lines and subsets of bit lines, and an access signal generator. The access signal generator can be configured to modify a magnitude of a signal to generate a modified magnitude for the signal to access a resistive memory element associated with a word line and a subset of bit lines. The modified magnitude can be a function of the position of the resistive memory element in the cross-point array.

Abstract: An output enable signal generating circuit for a semiconductor memory apparatus includes an output control unit configured to receive CAS latency information and to generate an output control signal having enable timing according to a DLL on/off mode, and an output enable signal output unit configured to receive the output control signal and to output an output enable signal in response to a read command and a DLL clock signal.

Abstract: A bridge device architecture for connecting discrete memory devices. The bridge device is used in conjunction with a composite memory device including at least one discrete memory device. The bridge device includes a local control interface for connecting to the at least one discrete memory device, a local input/output interface for connecting to the at least one discrete memory device, and a global input/output interface interposed between the local control interface and the local input/output interface. The global input/output interface receives and provides global memory control signals and also receives and provides write data to and read data from the at least one discrete memory device.

Abstract: A first delay circuit and a second delay circuit having different operation conditions from each other, a detection circuit that detects a difference in propagation speed of a pulse signal, which is simultaneously input to the first and second delay circuits, and a setting circuit that generates a selection signal based on a detection result from the detection circuit are provided. The selection signal is supplied to a delay control circuit that generates an operation timing signal by delaying a reference signal, of which a delay amount is controlled by the selection signal. With this arrangement, a necessity to set the delay amount of the delay control circuit with a large design margin can be eliminated considering PVT variation, and as a result, performance degradation can be prevented.

Abstract: A driver circuit and a precharge circuit apply, in a test mode, a fixed potential to a bit-line, while applying a second plate-line voltage to a plate-line. Then, the bit-line is switched from a first bit-line precharge potential to a floating state, and the plate-line voltage is raised from the second plate-line voltage to a plate-line voltage.

Abstract: Memories and methods for providing and receiving non-data signals at a signal node are disclosed. One such memory includes first and second signal nodes, and first and second signal buffer. The first signal buffer is configured to be operative responsive to a first data strobe signal and further configured to be operative responsive to a non-data signal. The second signal buffer is configured to be operative responsive to a second data strobe signal. An example first data strobe signal is a read data strobe signal provided by the memory. In another example, the first data strobe signal is a write data strobe signal received by the memory. Examples of non-data signals include a data mask signal, data valid signal, error correction signal, as well as other signals.

Abstract: A memory error signal detecting system including a signal extracting circuit, a flip-flop, a latch circuit, and a light sign is provided. The signal extracting circuit receives a memory error signal to output a pulse signal when the memory error signal switches from a first level to a second level. When the preset end of the flip-flop receives the pulse signal, and the maintaining time of the pulse signal is maintained for a predetermine time, the flip-flop output end is set to a high voltage level. The latch circuit determines whether to output the state of the flip-flop output according to the reset signal. The light sign operates according to the state of an output end of the latch circuit. Furthermore, a computer apparatus including the memory error signal detecting system is also provided.

Abstract: A semiconductor memory segment includes a first memory bank having a first tracking cell disposed in a first tracking column. A second memory bank includes a second tracking cell disposed in a second tracking column. A first tracking circuit is coupled to the first and second tracking cells and is configured to output a first signal to memory control circuitry when the first and second tracking cells are accessed. The memory control circuitry is configured to set a clock based on the first signal.

Abstract: A switching circuit comprises a control and bias stage configured for receiving a first input voltage signal, a second input voltage signal and a selection signal and for generating therefrom a first bulk bias signal substantially equal to the first input voltage signal or to the second input voltage signal depending on the selection signal. The switching circuit further comprises a switching stage connected to the control and bias stage, including a transistor having a bulk terminal, and configured for receiving the bulk bias signal and generating an output signal having the first input voltage signal when the selection signal indicates the selection of the first input voltage signal or having the second input voltage signal when the selection signal indicates the selection of the second input voltage signal. The bulk bias signal is electrically coupled to the bulk terminal of the transistor.

Abstract: A semiconductor device comprises: a control signal generating circuit that generates and outputs a control signal that is in an active state during a period around at least one of rising edges and falling edges of a clock signal; and a data input circuit that is controlled to be in an active state, in which a data signal can be received, while the control signal is in an active state, and otherwise controlled to be in an inactive state.

Abstract: By using a fact that a bit error in an on-chip embedded memory occurs at a random address, means for creating a chip-unique ID and utilizing this ID are provided. A controller having received a verification request from outside instructs a variable power supply circuit to decrease a voltage supplied to a memory to be lower than that at the normal operation time. When the voltage supplied to the memory is stabilized, the controller requests a memory test to a memory BIST. By using an address where an error occurs due to a result of the memory test, the controller creates the chip-unique ID and uses the ID as a response to the verification request.

Abstract: A plurality of control signals are asserted within an asynchronous integrated circuit memory device in response to each transition of a memory access initiation signal to effect pipelined memory access operations.

Abstract: A common standard may be used for both dynamic random access memories and non-volatile memories, despite the fact that the non-volatile memory generally needs bidirectional communications to coordinate writing with a memory controller. In one embodiment, a package connector on the non-volatile memory may be used for one function that does not involve communications with the memory controller during reading and may be used for communications with the memory controller during writing. Particularly, those communications during writing may be to indicate to the memory controller when the memory is ready for writing and when the memory is busy so that a write must be deferred until the memory is ready to be written to.

Abstract: A semiconductor integrated circuit includes a multi-mode control signal generating unit configured to control an activation of a up/down mat I/O switch control signal, which controls I/O switches in a up/down mat, according to a multi-test mode signal and a read/write discriminating signal, a multi-mode decoder configured to output multi-mat select signals to simultaneously activate a plurality of mats according to a multi-test mode active write signal, and a mat controller configured to enable word lines and the I/O switches according to the up/down mat I/O switch control signal and the multi-mat select signals.

Abstract: A timing control circuit comprises at least three current control units coupled in parallel between a first circuit and a second circuit node. The current control units each have an active mode and an inactive mode. The current control units are responsive to a timing trigger event to pass current whose magnitude is dependent on how many of the current control units are in the active mode. The current control units comprise a plurality of groups. Current control units within a same group are responsive to a change in a bit of a control value corresponding to that group to switch together between the active and inactive modes, such that the magnitude of the current is dependent on which of the groups are in the active mode. The signal timing in the associated circuit is varied in dependence on the magnitude of the current.

Abstract: According to one embodiment, a semiconductor memory device includes first cells, first lines, second lines, a first cell array, and a signal driver. The first cell has in either a first state or a second state. Retention time in the second state is longer than in the first state. The first cell array has the first cells formed in a matrix the individuals. The first cells are electrically connected by the first, second lines. The signal driver drives the first cells. The signal driver causes the first cells to transition to either the first state or the second state by controlling any one of a voltage, a current, and a charge amount applied to the first cells, or a combination of these, and waveforms of the voltage, current, and charge amount and/or the length of transfer time of at least one of the voltage, current, and charge amount.

Abstract: A bulk bias voltage generating device is configured to generate a first bulk bias voltage in a deep power down mode and a second bulk bias voltage in a normal mode. The first bulk bias voltage comprises an internal voltage level, and the second bulk bias voltage comprises an external voltage level.

Abstract: A system is provided for high-speed communication between a memory controller and a plurality of memory devices. A memory controller, and a plurality of memory devices are provided. Additionally, at least one channel is included for providing electrical communication between the memory controller and the plurality of memory devices, an impedance of the channel being at least partially controlled using High Density Interconnect (HDI) technology.

Abstract: Embodiments of the invention relate generally to data storage and computer memory, and more particularly, to systems, integrated circuits and methods for controlling memory disturbs to and among multiple layers of memory that include, for example, third dimensional memory technology. Each layer of memory can include a plurality of non-volatile memory cells that store data as a plurality of conductivity profiles that can be non-destructively read by applying a read voltage across a selected non-volatile memory cell. Data can be written to a selected non-volatile memory cell by applying a write voltage having a predetermined magnitude and polarity across the selected non-volatile memory cell. Stored data is retained in the plurality of non-volatile memory cells in the absence of power.

Abstract: Provided is a semiconductor integrated circuit according to an exemplary aspect of the present invention including first and second transmitter-receivers that execute transmission and reception of data through a signal line. The first transmitter-receiver includes a first termination circuit that includes a first resistor and a first switch, the first resistor being provided between a first power supply terminal and the signal line, the first switch controlling a current flowing through the first resistor to be turned on and off, and a control circuit that outputs a first control signal to the first termination circuit so that the first switch is turned on when the first transmitter-receiver receives data, the first switch is turned off when the first transmitter-receiver transmits the data, and the first switch is continuously on during a first predetermined period after receiving the data when the first transmitter-receiver further receives another data after receiving the data.

Abstract: A storage device includes a storage array having a group of storage elements. Each storage element can written to a discrete set of physical states. A read circuit selects one or more storage elements and generates, for each selected storage element, an analog signal representative of the physical state of the selected storage element. A signal processing circuit processes the analog signal to generate a plurality of outputs, with each output representing a degree of an association of the selected storage element with a different subset of one or more of the discrete set of physical states.

Abstract: Some embodiments include apparatus and methods having a memory cell included in a device, a control line configured to receive a control signal to access the memory cell, and a first line configured to transfer information to and from the memory cell. The control signal has a first level during a first time interval and a second level during a second time interval of a memory operation. The apparatus and methods also include a module configured to reduce difference between a value of a voltage on the second line and a value of a voltage on a node of the device during a first time portion of the second time interval. Additional apparatus and methods are disclosed.

Abstract: A solid-state memory in which write assist circuitry is implemented within each memory cell. Each memory cell includes a storage element, such as a pair of cross-coupled inverters, and an equalization gate connected between the storage nodes of the storage element. The equalization gate may be realized by two transistors in series, or as a double-gate transistor. The equalization gate is controlled by a word line indicating selection of the row containing the cell in combination with a column select signal indicating selection of the column containing the cell in a write cycle. Upon a write to a selected cell, both gates are turned on, connecting the storage nodes of the cell to one another and assisting the write of the opposite date state from that previously stored.

Abstract: A system for controlling a refresh operation of a plurality of stacked semiconductor chips includes a first semiconductor configured to output a refresh signal for performing a refresh operation, and a semiconductor chip discrimination signal, and a plurality of second semiconductor chips configured to perform a refresh operation at different timings in response to the refresh signal, and the semiconductor chip discrimination signal.

Abstract: The present invention relates to a memory cell having a reduced circuit area, which comprises a first transistor, a second transistor, a third transistor, and a fourth transistor. The first transistor is coupled to a readline and controlled by a wordline. The second transistor is coupled between the first transistor and a low-voltage power supply. The third transistor is coupled to the second transistor and controlled by a bitline. The third transistor controls turn-on and cutoff of the second transistor. Besides, the fourth transistor is coupled to the third transistor and a writeline, and is controlled by the wordline. Thereby, according to the present invention, four transistors form a memory cell, and the objective of saving circuit area can be achieved.

Abstract: An integrated circuit includes a reference voltage level setting circuit and a reference voltage generation circuit. The reference voltage level setting circuit is configured to set a level of an input reference voltage to a preset level in a power-up period or a self-refresh mode. The reference voltage generation circuit is configured to select one of a plurality of reference voltages and output the selected reference voltage as the input reference voltage when the power-up period is ended and an operation mode is not in the self-refresh mode.

Abstract: A semiconductor memory device includes a memory cell array including a plurality of memory cells, circuits configured to receive program data when a program operation is performed and output a random signal in response to the program data, and a page buffer configured to logically combine the program data and the random signal and to store the logically combined data in the memory cells.

Abstract: There is provided a command generation circuit. The command generation circuit includes a first driving unit driving an output node in response to an internal MRS command and a RAS idle signal; a second driving unit driving the output node in response to an off-signal; and a latch unit latching a signal at the output node in response to a power-up signal and generating an SRR command.

Abstract: A circuit and method are provided for controlling power consumption in an electronic circuit. Generally, the method involves measuring current flow through a memory core in the circuit, the memory core including a number of cells each with a number of active devices, and, if current flow exceeds a predetermined amount limiting it by applying reverse body bias to the active devices. In one embodiment, power is supplied to the memory through a low drop-out (LDO) regulator fabricated on a common substrate therewith, and the LDO regulator functions as a current mirror to mirror current through the memory core through a replica stack. Other embodiments are also disclosed.

Abstract: A memory controller having a time-staggered request signal output. A first timing signal is generated while a second timing signal is generated having a first phase difference relative to the first timing signal. An address value is transmitted in response to the first timing signal and a control value is transmitted in response to the second timing signal, the address value and control value constituting portions of a first memory access request.

Abstract: A signal adjusting system includes: a signal generating apparatus for transmitting a first driving signal and a second driving signal, a plurality of signal transmitting paths coupled to the signal generating apparatus, and a controlling apparatus coupled to the plurality of signal transmitting paths for receiving a first transmitted signal corresponding to the first driving signal and a second transmitted signal corresponding to the second driving signal, and detecting a phase difference between the first transmitted signal and the second transmitted signal to generate a detected result for the signal generating apparatus, wherein the signal generating apparatus adjusts a first driving ability of the first driving signal and a second driving ability of the second driving signal according to the detected result.

Abstract: A memory integrated circuit (IC) includes a read module and a sequence detector module. The read module reads S memory cells (cells) located along one of a bit line and a word line and generates S read signals, where S is an integer greater than 1. The sequence detector module detects a data sequence based on the S read signals and reference signals. The data sequence includes data stored in the S cells. Each of the reference signals includes an interference-free signal associated with one of the S cells and an interference signal associated with another of the S cells that is adjacent to the one of the S cells.

Abstract: A method and system for serializing an enable signal designating an electronic device such as a chip to enable or disable in order to reduce the number of pins and physical signal traces required to provide connections for enable signals of multiple electronic devices, such as memory, e.g. Flash and DRAM, is described. The enable signal can be encoded to reduce the number of clock cycles to send the serialized enable signal. A device controller can serialize, encode, and send the enable signal to a decoding module using reduced number of pins and physical connections. Then the decoding module can send a decoded enable signals to individual electronic devices or chips to enable or disable.

Abstract: Semiconductor memory devices include a first storage layer and a second storage layer, each of which includes at least one array, and a control layer for controlling access to the first storage layer and the second storage layer so as to write data to or read data from the array included in the first storage layer or the second storage layer in correspondence to a control signal. A memory capacity of the array included in the first storage layer is different from a memory capacity of the array included in the second storage layer.

Abstract: Each of a plurality of memories includes a terminating resistor for preventing signal reflection, and a memory control circuit includes an ODT control circuit for driving the terminating resistor of each memory, and a selector for selecting, from memories except for a memory to be accessed, at least one memory for which driving of the terminating resistor is to be suppressed, in accordance with the memory to be accessed.

Abstract: A semiconductor memory device includes a write control signal generating circuit and a write enable signal generating unit. The write control signal generating circuit is configured to generate a write control signal activated during a time period from an input time point of a read command to an end time point of a data output time period. The write enable signal generating unit is configured to output a write command as a write enable signal in response to the write control signal.

Abstract: A system and method is provided for transmitting a signal to a plurality of slave devices (e.g., memory devices, etc.) via a communication circuit having a plurality of segments that are substantially equal in length and/or impedance. Specifically, according to one embodiment of the invention, an electronic system includes a processor, a plurality of memory devices, and a communication circuit (i.e., a bus) having a central node and a plurality of segments. Specifically, the plurality of segments are used to connect the plurality of devices (e.g., the processor, the plurality of memory devices) to the central node. For example, the processor is connected to the central node via a primary segment, the first memory device (M0) is connected to the central node via a first segment, etc. In one embodiment of the invention, the plurality of segments are substantially equal in length. In other words, the central node is substantially electrically-equidistant from each memory device.

Abstract: An electronic flash memory external storage method and device for data processing system includes firmware which directly controls the access of electronic storage media and implements standard interface functions, adopts particular reading and writing formats of the external storage media, receives power via USB, externally stores data by flash memory and access control circuit with the cooperation of the firmware and the driver with the operating system, and has write-protection so that the data can be safely transferred. The method according to present invention is highly efficient and all parts involved are assembled as a monolithic piece so that it has large-capacity with small size and high speed. The device operates in static state and is driven by software. It is plug-and-play and adapted to data processing system.

Abstract: Methods, memory devices and systems are disclosed. In one embodiment, a non-volatile memory device receives command signals through the same input/output terminals that receive address signals and write data signals and transmit read data signals. The input/output terminals are connected to a multiplexer, which is responsive to a received mode control signal to couple the input/output terminals to either a command bus or an input/output bus. A latch in the memory device latches the command signals when the mode control signal causes the input/output terminals to be coupled to the input/output bus. As a result, the command signals continue to be applied to the command bus. When the mode control signal causes the input/output terminals to be coupled to the input/output bus, write data signals are clocked into the memory device and read data signals are clocked out of the memory device responsive to a received clock signal.

Abstract: An operation guarantee system includes a decoder circuit, a comparison circuit, a CPU circuit, a frequency adjustment circuit and a DQ adjustment circuit. The comparison circuit compares a test data signal input from the decoder circuit with an expected value data signal input from the exterior, and detects the presence or absence of an output error in the decoder circuit. The CPU circuit controls the frequency adjustment circuit and the DQ adjustment circuit to vary a frequency of a clock signal input to an external memory and a delay amount of the data signal. In addition, the CPU circuit acquires a result of detection of the comparison circuit under various conditions. Then, the CPU circuit determines an appropriate frequency of the clock signal input to the external memory based on a relationship between the various conditions and the presence or absence of the output error.

Abstract: A semiconductor memory apparatus includes: a memory cell array including a plurality of memory cells; a bit line sense amplifier (BLSA) coupled to the memory cells in the memory cell array through a bit line; a plurality of local input/output lines coupled to the BLSA; and a switching unit coupled to the local input/output lines and configured to select a part of the local input/output lines.

Abstract: A semiconductor memory circuit, comprising: a memory array, the memory array including a plurality of wordlines each connected to a respective row of cells and a plurality of bitlines each connected to a respective column of cells. The semiconductor memory circuit also comprises at least one row decoder for selecting a group of wordlines within the plurality of wordlines; and a plurality of driver circuits for driving the plurality of bitlines respectively and setting the cells connected to the group of wordlines to a predetermined logic state. Also, a method for presetting at least part of a memory array, the memory array comprising a plurality of wordlines each connected to a respective row of cells. The method comprises selecting a group of wordlines within the plurality of wordlines; and simultaneously setting memory cells connected to the group of wordlines to a predetermined logic state.

Abstract: A semiconductor device with a reduced area and capable of higher integration and larger storage capacity is provided. A multi-valued memory cell including a reading transistor which includes a back gate electrode and a writing transistor is used. Data is written by turning on the writing transistor so that a potential according to the data is supplied to a node where one of a source electrode and a drain electrode of the writing transistor and a gate electrode of the reading transistor are electrically connected to each other, and then turning off the writing transistor and holding a predetermined potential in the node. Data is read by supplying a reading control potential to a control signal line connected to one of a source electrode and a drain electrode of the reading transistor, and then detecting potential change of a reading signal line.

Abstract: A memory device is disclosed that includes multiple bit cells, whereby each bit cell is capable of being programmed to more than two states. A value stored at the memory device is determined by comparing the information stored at three or more of the bit cells. In an embodiment, the bit cell includes a silicon-on-insulator (SOI) metal oxide semiconductor field effect transistor (FET) device, and the information stored at the bit cell can be represented by a corresponding level of charge stored in the body of the device.

Abstract: A semiconductor memory module (1) includes a circuit substrate (2), a first (100), a second (200), a third (300) and a fourth (400) rank of memory chips (3), a first register (10) and a second register (20). The first register (10) and the second register (20) each comprise a first input (11, 21) for receiving a respective chip select signal (CS0, CS2), a second input (12, 22) for receiving a respective other chip select signal (CS1, CS3) at least one third input (13, 23) for receiving command/address signals (CA), and at least one third output (16, 26).