Abstract: A method includes generating, from a representation of a first integrated circuit, a representation of a second integrated circuit. The representation of the first integrated circuit includes a plurality of representations of operative memory channel interfaces including a representation of a first operative memory channel physical interface. The representation of the second integrated circuit includes a representation of a pseudo-memory channel physical interface and at least a representation of a second operative memory channel physical interface. The generating includes replacing an instantiation of a first circuit of the representation of the first operative memory channel physical interface with an instantiation of a second circuit. The instantiation of the second circuit is a representation of a circuit that is logically equivalent to a first circuit represented by the instantiation of the first circuit.

Abstract: A sense amplifier includes a first PMOS transistor, a second PMOS transistor, a third PMOS transistor, a fourth PMOS transistor, a first NMOS transistor, a second NMOS transistor, a third NMOS transistor, and a fourth NMOS transistor. The first PMOS transistor, the second PMOS transistor, the first NMOS transistor, and the second NMOS transistor form cross coupled sensing pairs. The third PMOS and the fourth PMOS transistors serve as compensation transistors. The third NMOS and the fourth NMOS transistors serve as sensing enabling transistors.

Abstract: Memories containing command decoder, chip enable, and signal truncation circuits are disclosed. One such command decoder circuit may include command decoder logic configured to receive command signals and output a decoded command to an interconnect bus responsive to a chip select signal having an active state. Decoder circuits may also prevent coupling commands to the interconnect bus based on the receipt of chip select signals having inactive states. The memory further may include chip enable circuits having control logic configured to receive chip select signals and provide the chip select signals to an interconnect bus responsive to receiving a valid command. Chip enable circuits may also prevent coupling chip select signals to the interconnect bus from chip enable signals based on the receipt of invalid command signals. Signal truncation circuits may be used to shorten and/or shift chip select signals to increase timing margins and improve the reliability of command execution by memories.

Abstract: A semiconductor memory device comprises a variable delay unit and a data trainer. The variable delay unit is configured to generate a write data signal by delaying a write data driving signal by different amounts of time depending on whether the semiconductor memory device is in a data training mode or a normal operating mode, and further configured to generate a read data driving signal by delaying a read data signal by different amounts of time in the data training mode and the normal operating mode. The data trainer is configured to be activated in the data training mode, and while activated, receive the write data signal, compare the write data signal with a predetermined write pattern, perform a data training mode operation, and output the read data signal with a predetermined read pattern.

Abstract: A memory integrated circuit (IC) includes a read module and a sequence detector module. The read module reads S memory cells (cells) located along one of a bit line and a word line and generates S read signals, where S is an integer greater than 1. The sequence detector module detects a data sequence based on the S read signals and reference signals. The data sequence includes data stored in the S cells. Each of the reference signals includes an interference-free signal associated with one of the S cells and an interference signal associated with another of the S cells that is adjacent to the one of the S cells.

Abstract: A semiconductor memory storage device is disclosed, the memory having a plurality of storage cells.

Abstract: A dual function memory device architecture compatible with asynchronous operation and synchronous serial operation. The dual function memory device architecture includes one set of physical ports having two different functional assignments. Coupled between the physical ports and core circuits of the memory device are asynchronous and synchronous input and output signal paths or circuits. The signal paths include shared or dedicated buffers coupled to the ports, asynchronous and synchronous command decoders, a network of switches, and a mode detector. The mode detector determines the operating mode of the dual function memory device from a port, and provides the appropriate switch selection signal. The network of switches routes the input or output signals through the asynchronous or synchronous circuits in response to the switch selection signal. The appropriate command decoder interprets the input signals and provides common control logic with the necessary signals for initiating the corresponding operation.

Abstract: A memory may include a memory array, a plurality of control circuits, and a plurality of isolation circuits. The plurality of control circuits may be configured to generate control signals for the memory array. For example, the plurality of control circuits may include a plurality of word line driver circuits. The plurality of isolation circuits may be configured to receive the control signals from the plurality of control circuits and a plurality of isolation signals. A first isolation signal may correspond to the plurality of word line driver circuits and at least one second isolation signal may correspond to other ones of the plurality of control circuits. The first isolation signal and the second isolation signal may be independently controlled during memory tests to detect stuck-at faults associated with the plurality of isolation signals.

Abstract: One package contains a plurality of memory chips. Each memory chip has an I/O terminal which generates a busy signal. The busy signal enables a busy state when a power supply voltage value reaches a specified and guaranteed range after a power-on sequence. The busy signal maintains the busy state until completion of initialization operations for the plurality of memory chips. The busy signal releases the busy state after completion of all initialization operations for the plurality of memory chips.

Abstract: In an embodiment, the effect of signal phase difference on a memory system is tested for various operating states. The various operating states may be represented as respective sample points on a plane defined by a range of values for a difference in signal phases and a range of values for another operating state parameter. In various embodiments, sample points for a round of crosstalk testing may include two sample points which are offset from the same reference point on the plane along different respective axes, where the axes are oblique to one another.

Abstract: A semiconductor memory device includes a plurality of memory regions formed on one chip, each of the memory regions having a plurality of volatile memory cells that are formed with a density or capacity of 2?K bits, where K is an integer greater than or equal to 0, and a plurality of input/output (I/O) terminals for inputting and outputting data of the volatile memory cells, and at least one peripheral region that controls a write operation for writing data into the memory regions and a read operation for reading data from the memory regions based on a command and an address input from outside. Thus, a total or entire density of the memory regions corresponds to a non-standard (or ‘interim’) density so that the semiconductor memory device may have an interim density.

Abstract: A voltage stabilization circuit of a semiconductor memory apparatus includes an operation speed detecting unit configured to detect an operation speed of the semiconductor memory apparatus to generate a detection signal, and a voltage line controlling unit configured to interconnect a first voltage line and a second voltage line in response to the detection signal.

Abstract: Examples described include memory units coupled to a controller using a daisy chain wiring configuration. A filter located between a first memory unit and the controller attenuates a particular frequency, which may improve ringback in a signal received at the memory units. In some examples, a quarter-wavelength stub is used to implement the filter. In some examples, signal components at 800 MHz may be attenuated by a stub, which may improve ringback.

Abstract: A method and system to lower the minimum operating voltage of a register file without increasing the area of each bit cell of the register file. In one embodiment of the invention, the register file is coupled to logic that reduces the contention between the NMOS devices and the PMOS devices in each bit cell of the register file during write and/or read operations of the register file. By doing so, the register file is able to operate at a lower minimum operating voltage.

Abstract: A memory system having first and second memory devices and a termination component. A first signal line is coupled to the first memory device to provide first data, associated with a write command, to the first memory device, and a second signal line coupled to the second memory device to provide second data, associated with the write command, to the second memory device. A control signal path is coupled to the first and second memory devices and the termination component such that the write command propagating on the control signal path propagates past the first memory device and the second memory device before reaching the termination component. A third signal line is provided to convey a clock signal that indicates when the write command propagating on the control signal path is to be sampled by the first and second memory devices.

Abstract: A memory interface control circuit includes an input/output circuit 10 which transmits and receives a data strobe signal DQS to and from a memory, a read control circuit 20 which determines that the data strobe signal DQS associated with a memory read, received from the input/output circuit has repeated a predetermined number of times of transitions based on information on the number of data reads and sets a mask signal MS to a mask state, and a write control circuit 30 which controls a transmission timing of outputting the data strobe signal DQS associated with a memory write from the input/output circuit 10 based on a temporal positional relationship between a data strobe output request signal DQOEN associated with the memory write and the mask signal MS.

Abstract: Memory controllers, memory devices and methods are provided in which test data is transmitted and signal parameters are varied. The transmitted test data is read, and based on a comparison between transmitted test data and read test data a transmitter impedance is adjusted.

Abstract: Disclosed is a non-volatile semiconductor memory circuit with an improved resistance spread characteristic distinguishing set data and reset data. The non-volatile semiconductor memory circuit includes a memory cell array, and a read/write circuit block configured to differentiate the current drivability based on the mode of operation, wherein the current drivability is provided in response to a bias signal based on set or reset state of data.

Abstract: A semiconductor memory device having a multi-chip package structure providing active termination control. The semiconductor memory device includes first and second memory chips sharing a data I/O bus. The first memory chip includes a first chip enable (CE) port determining whether the first memory chip is activated, and a second CE port monitoring whether the second memory chip is activated. An active termination unit is turned ON only when the first and second chips are deactivated.

Abstract: An SRAM write assist apparatus comprises a timer unit and a voltage divider. The voltage divider unit is configured to divide a voltage potential down to a lower level. The output of the voltage divider is connected to a memory cell in a write operation. The timer unit is configured to generate a pulse having a width inversely proportional to the voltage potential applied to a memory chip. Furthermore, the timer unit controls the period in which a lower voltage from the output of the voltage divider is applied to the memory cell. Moreover, external level and timing programmable signals can be used to further adjust the voltage divider's ratio and the pulse width from the timer unit. By employing the SRAM write assist apparatus, a memory chip can perform a reliable and fast write operation.

Abstract: A current control device is disclosed, which reduces a standby current of a semiconductor memory device and a turn-on current of a transistor. The current control device includes an input controller configured to combine a trigger signal and a set signal controlling a circuit operation status, and a drive unit configured to drive an output signal of the input controller, wherein the drive unit includes a current controller for selectively providing a ground voltage in response to an activation status of a pull-down driving signal.

Abstract: Measuring control signal timing for synchronous dynamic random access memory (‘SDRAM’), including combining into a trigger signal for an oscilloscope display control signals of an SDRAM under test, the control signals derived only from a single type of memory operations; and driving, continually during both READ and WRITE operations to and from the SDRAM under test, the oscilloscope display with a memory bus data signal (‘DQ’) and a memory bus clock signal (‘DQS’) from the SDRAM under test.

Abstract: A semiconductor memory device includes an I/O line for transmitting read data that has been read from a memory cell, a plurality of driver circuits for driving the I/O line on the basis of the read data, a read circuit for receiving the read data transmitted through the I/O line, and an assist circuit for amplifying the read data transmitted through the I/O line. The assist circuit is disposed farther away from a prescribed drive circuit included in the plurality of drive circuits as viewed from the read circuit. The signal level can thereby rapidly change levels even in memories having relatively long I/O lines.

Abstract: A timing control circuit comprises at least three current control units coupled in parallel between a first circuit and a second circuit node. The current control units each have an active mode and an inactive mode. The current control units are responsive to a timing trigger event to pass current whose magnitude is dependent on how many of the current control units are in the active mode. The current control units comprise a plurality of groups. Current control units within a same group are responsive to a change in a bit of a control value corresponding to that group to switch together between the active and inactive modes, such that the magnitude of the current is dependent on which of the groups are in the active mode. The signal timing in the associated circuit is varied in dependence on the magnitude of the current.

Abstract: A data output circuit of a semiconductor memory device includes a pipe latch unit configured to store input parallel data and align the stored data in response to a plurality of alignment control signals to output serial output data, and an alignment control signal generating unit configured to generate the plurality of alignment control signals in response to a burst-type information and a seed address group, wherein the alignment control signal generating unit generates the alignment control signals to swap data in a swap mode where the burst-type is a certain type and bits of the seed address group are certain values.

Abstract: Apparatus and methods are provided for accessing memory elements. An exemplary memory element includes an array of memory cells and a control module. Each memory cell of the array is coupled to an access line, wherein the control module is configured to assert a first signal for a write duty cycle on the access line to enable writing to a first memory cell of the array of memory cells, and the control module is configured to assert a second signal for a read duty cycle on the access line to enable reading from the first memory cell. The write duty cycle and the read duty cycle are each selected from a plurality of possible duty cycles. In an exemplary embodiment, the read duty cycle and the write duty cycle are chosen to optimize a performance parameter for the memory element.

Abstract: A memory system includes a memory controller that writes data to and reads data from a memory device. A write data strobe accompanying the write data indicates to the memory device when the write data is valid, whereas a read strobe accompanying data from the memory device indicates to the memory controller when the read data is valid. The memory controller adaptively controls the phase of the write strobe to compensate for timing drift at the memory device. The memory controller uses the read strobe as a measure of the drift.

Abstract: A memory device includes an array of memory cells, the memory device including a bitline biasing circuit for biasing a bitline during a write operation. The bitline biasing circuit operating to provide a negative biasing voltage to the bitline. The magnitude of the negative biasing voltage is inversely proportional to a memory cell supply voltage level provided at a memory cell supply voltage node.

Abstract: A semiconductor memory device includes: a first switch configured to couple a bit line to a first input/output line in response to an output selection signal including a pulse which is generated in response to a read command or write command; and a second switch configured to couple the first input/output line to a second input/output line in response to a switching control signal which is enabled after the output selection signal is enabled.

Abstract: Embodiments of a circuit are described. This circuit includes control logic that generates multiple piecewise-erase commands to erase information stored in a storage cell of a memory device formed within another circuit. Note that execution of a single one of the multiple piecewise-erase commands within the memory device may be insufficient to erase the information stored in the storage cell. Moreover, the first circuit includes an interface that receives the multiple piecewise-erase commands from the control logic and that transmits the multiple piecewise-erase commands to the memory device.

Abstract: A semiconductor memory segment includes a first memory bank having a first tracking cell disposed in a first tracking column. A second memory bank includes a second tracking cell disposed in a second tracking column. A first tracking circuit is coupled to the first and second tracking cells and is configured to output a first signal to memory control circuitry when the first and second tracking cells are accessed. The memory control circuitry is configured to set a clock based on the first signal.

Abstract: A data transfer circuit has a reduced number of lines for transferring a training pattern used in a read training for high speed operation, by removing a register for temporarily storing the training pattern, and a semiconductor memory device including the data transfer circuit. The data transfer circuit includes a latch unit and a buffer unit. The latch unit latches one bit of a training pattern data input together with a training pattern load command whenever the training pattern load command is input. The buffer unit loads a plurality of bits latched in the latch unit, including the one bit of training pattern data, in response to a strobe signal.

Abstract: A timing adjustment circuit includes a determination unit for outputting delay information corresponding to a period of a first input signal, a storing unit for storing a plurality of correction values based on a circuit included in the determination unit, a correction unit for correcting the delay information based on a correction value selected from the plurality of the correction values, based on the delay information, and a first delay line for delaying a second input signal corresponding to the first input signal, based on the delay information corrected by the correction unit.

Abstract: A signal processing circuit including a nonvolatile storage circuit with a novel structure. The signal processing circuit includes a circuit that is supplied with a power supply voltage and has a first node to which a first high power supply potential is applied, and a nonvolatile storage circuit for holding a potential of the first node. The nonvolatile storage circuit includes a transistor whose channel is formed in an oxide semiconductor layer, and a second node that is brought into a floating state when the transistor is turned off. A second high power supply potential or a ground potential is input to a gate of the transistor. When the power supply voltage is not supplied, the ground potential is input to the gate of the transistor and the transistor is kept off. The second high power supply potential is higher than the first high power supply potential.

Abstract: An integrated circuit includes a global I/O line (GIO) for transmitting read data and write data between a peripheral region and a core region when a read/write operation is activated, and a test circuit for transmitting/receiving test data through the global I/O line to test the integrated circuit, when a test operation is activated.

Abstract: Double-pulse write for phase change memory including: writing a phase change material from a high RESET state to a weakened RESET state with a first step, writing the phase change material from the weakened RESET state to a SET state with a second step, the second step having a lower current than the first step, verifying a parameter of the phase change material wherein if the parameter is higher than a target for a SET state, then repeating the writing with the first step, the writing with the second step, and the verifying until the parameter is lower than the target wherein a current for the first step is decreased by a decrement with each iteration without becoming lower than a current for the second step.

Abstract: A semiconductor memory device includes a refresh counter for counting a refresh signal and outputting a refresh address in response to an active mode signal enabled in an active mode, an external address input buffer for buffering an external address to output an internal address in response to a mode selection signal enabled in an external address refresh mode, an address selector for outputting the refresh address from the refresh counter as a selection row address in a normal refresh mode and outputting the internal address from the external address input buffer as the selection row address in the external address refresh mode in response to the refresh signal and the mode selection signal, and a row address decoder for generating a row address selection signal for sequentially accessing word lines by decoding the selection row address.

Abstract: Circuits, methods, and apparatus that adaptively control 1T and 2T timing for a memory controller interface. An embodiment of the present invention provides a first memory interface as well as an additional memory interface, each having a number of address and control lines. The address and control lines of the redundant memory interface may be individually enabled and disabled. If a line in the additional interface is enabled, it and its corresponding line in the first interface drive a reduced load and may operate at the higher 1T data rate. If a line in the additional interface is disabled, then its corresponding line in the first interface drives a higher load and may operate at the slower 2T data rate. In either case, the operating speed of the interface may also be considered in determining whether each line operates with 1T or 2T timing.

Abstract: Embodiments of the invention describe driving data onto a bus. The embodiments include a data driver circuit having a data capture circuit coupled to the bus. The data capture circuit receives data relative to a write strobe signal and captures a first digit of the data responsive to a first edge of the write strobe signal and at least a second digit responsive to a second edge of the write strobe signal. The data driver circuit includes a feedback capture circuit that captures each digit in substantially the same manner as the data capture circuit, and generates a latch control signal indicative of when each digit is latched. The latch control signal is provided to a write control circuit that determines which digit was latched first relative to a timing, and generates a select control signal to drive captured digits onto the bus in the order the digits were received.

Abstract: A refresh control circuit for a semiconductor memory device includes a refresh controller configured to control the number of times a refresh signal is enabled during one refresh period in response to a refresh mode entering signal which indicates the start of a refresh mode, and a mode determination signal having refresh mode information, a refresh counter configured to output a row address for a refresh operation by counting the refresh signal in response to an active signal enabled in an active mode, and a row address decoder configured to decode the row address to generate a row address selection signal for sequentially accessing word lines within a cell array.

Abstract: An internal circuit has a plurality of circuit blocks operating by receiving an internal power supply voltage. An internal voltage control circuit generates a plurality of regulator control signals according to a combination of operating circuit blocks. A plurality of regulators operate in response to activation of the regulator control signals respectively to generate the internal power supply voltage by using an external power supply voltage. For example, as the number of the operating circuit blocks increases, the number of the operating regulators increases. By thus generating the regulator control signals according to the actual operation of the internal circuit to control the operations of the regulators, it is possible to reduce variation in the internal power supply voltage to a minimum. As a result, an operating margin of a semiconductor integrated circuit can be improved and a yield of the semiconductor integrated circuit can be improved.

Abstract: To provide a semiconductor device which can perform initialization to a first state of two states of the first state and a second state, and which can generate a signal having a potential corresponding to the initialized first state. The present invention is the semiconductor device which can perform initialization to “0” (a first state) of two states of “0” and “1” (a second state), and which can generate a signal having a potential corresponding to initialized “0”. The semiconductor device 10 includes a plurality of flip-flop circuits 2 that are connected in parallel and which can hold the two states of “0” and “1”; and an AND circuit 3 which generates and outputs a signal having a potential corresponding to “0” when a state held in at least one flip-flop circuit 2 among the flip-flop circuits 2 is “0”. The AND circuit is connected to the flip-flop circuits 2.

Abstract: A method of accelerating write timing calibration and a write timing calibration acceleration circuit in a semiconductor memory device are disclosed. The write timing calibration acceleration circuit includes a phase difference detection unit and a detection data output unit. The phase difference detection unit detects a phase difference between a first signal and a second signal applied for a write timing calibration. The detection data output unit outputs detection data corresponding to the detected phase difference through a data output line. According to the write timing calibration acceleration circuit of the inventive concept, a time taken to perform a write timing calibration is reduced, thereby minimizing boot up time and power consumption.

Abstract: A semiconductor memory apparatus includes: a memory block including first and second planes; and a reset signal generator configured to generate a first reset signal by logically combining a first plane selection signal and a control pulse signal which pulses after a first programming setup pulse signal pulses during a first programming command cycle, and generate a second reset signal by logically combining a second plane selection signal and the control pulse signal which again pulses after a second programming setup pulse signal pulses during a second programming command cycle after the first programming command cycle. A plurality of first page buffers allocated to the first plane are reset in response to the first reset signal, and a plurality of second page buffers allocated to the second plane are reset in response to the second reset signal.

Abstract: A system is provided for high-speed communication between a memory controller and a plurality of memory devices. A memory controller, and a plurality of memory devices are provided. Additionally, at least one channel is included for providing electrical communication between the memory controller and the plurality of memory devices, an impedance of the channel being at least partially controlled using High Density Interconnect (HDI) technology.

Abstract: An apparatus is provided that includes a memory controller to provide a first on-die termination (ODT) signal and a second ODT signal, a memory channel, a first memory module to couple to the memory channel, and a second memory module to couple to the memory channel. The first memory module may include a first memory having a first ODT circuit to receive the first ODT signal, and a second memory having a second ODT circuit to receive the first ODT signal. The first ODT signal may disable the ODT circuit of the first memory when the first memory is to be ACTIVE.

Abstract: A system includes a voltage generator to produce a pre-charge voltage signal for pre-charging one or more signals in a memory circuit. The one or more signals can be data bus lines used to access memory. The voltage generator can include an input indicating whether the memory circuit is set to a power-saving mode. The input adjusts a magnitude of the pre-charge voltage signal produced by the voltage generator. Adjusting the pre-charge voltage can result in power savings. When in the power-saving mode, the voltage generator circuit can adjust the pre-charge voltage to a value that reduces an amount of leakage current associated with a pre-charge voltage. Reducing the leakage with respect to the pre-charge voltage means that the saved power can be used for other useful purposes.

Abstract: A method of controlling a plurality of memory cells in a row. The method includes controlling a switching element using at least one write word line signal to raise a voltage of a node connected to the plurality of memory cells in the row when the plurality of memory cells in the row operate in a first mode. The method further includes controlling at least one transistor using the at least one write word line signal to connect the plurality of memory cells in the row to a reference voltage when the plurality of memory cells in the row operate in a second mode.

Abstract: A semiconductor device includes a fuse element, a read-out circuit that reads out a memory content of the fuse element in response to a first internal reset signal that is activated in response to transition of an external reset signal, and a latch circuit that holds therein the memory content read out by the read-out circuit and is reset by a second internal reset signal that is activated based on an activation period of the external reset signal. With this configuration, even when the activation period of the external reset signal is long, the time for which a current flows through the fuse element can be shortened, thereby making it possible to reduce a current consumption at the time of a reset operation.

Abstract: A memory system includes a plurality of semiconductor memory devices each including a termination resistance circuit that can be controlled to be turned on or off from an outside by a termination resistance control signal, and a memory controller. The memory controller includes a termination resistance control unit that outputs the termination resistance control signal so that when a read command or a write command is executed on one of the semiconductor memory devices, termination resistances of all of the semiconductor memory devices are turned on, and when any of the semiconductor memory devices does not execute the read command or the write command, the termination resistances of all of the semiconductor memory devices are turned off. The termination resistance circuit of one of the semiconductor memory devices is turned off, irrespective of the level of the termination resistance control signal when the one of the semiconductor memory devices outputs data in response to the read command.