Abstract: A method for forming a silicon carbide film containing Si, C, O, H, and optionally N on a substrate placed in a reaction space, includes the steps of: introducing into the reaction space a precursor containing Si, C, O, and H and having at least one Si—O bond in its molecule; introducing into the reaction space an inert gas; applying RF power in the reaction space, wherein a ratio of a flow rate (sccm) of the inert gas to the RF power (W/cm2) is controlled at 30-850; and thereby depositing on the substrate a silicon carbide film containing Si, C, O, H, and optionally N.

Abstract: Systems and methods for the gas treatment of one or more substrates include at least two gas injectors in a reaction chamber, one of which may be movable. The systems may also include a substrate support structure for holding one or more substrates disposed within the reaction chamber. The movable gas injector may be disposed between the substrate support structure and another gas injector. The gas injectors may be configured to discharge different process gasses therefrom. The substrate support structure may be rotatable around an axis of rotation.

Abstract: A method of manufacturing a semiconductor device includes the steps of loading a substrate into a processing chamber; processing the substrate by supplying plural kinds of reaction substances into the processing chamber multiple number of times; and unloading the processed substrate from the processing chamber, wherein at least one of the plural kinds of reaction substances contains a source gas obtained by vaporizing a liquid source by a vaporizing part; in the step of processing the substrate, vaporizing operation of supplying the liquid source to the vaporizing part and vaporizing the liquid source is intermittently performed, and at least at a time other than performing the vaporizing operation of the liquid source, a solvent capable of dissolving the liquid source is flowed to the vaporizing part at a first flow rate; and at a time other than performing the vaporizing operation of the liquid source and every time performing the vaporizing operation of the liquid source prescribed number of times, the sol

Abstract: A method of and system for chemical vapor deposition of layers of material on substrates for producing semiconductor devices provides for continuous in-line processing. The method includes continuously conveying a plurality of substrates through a plurality of in-line deposition regions, continuously providing and distributing a chemical vapor at each region to deposit material for the layer, and continuously supplying a flow of chemical material for each region to provide the chemical vapor. The system includes a continuous in-line substrate conveyance apparatus for moving a plurality of substrates through a plurality of deposition regions, a deposition head for providing and distributing a chemical vapor at each of the regions to deposit material for the layers, and a chemical material supply apparatus for providing a flow of chemical materials to each of the heads for the chemical vapor.

Abstract: A method is provided for tribological lubrication of sliding contact surfaces, where two surfaces are in contact and in motion relative to each other, operating in a vapor-phase environment containing at least one alcohol compound at a concentration sufficiently high to provide one monolayer of coverage on at least one of the surfaces, where the alcohol compound continuously reacts at the surface to provide lubrication.

Abstract: Methods and compositions for depositing high-k films are disclosed herein. In general, the disclosed methods utilize precursor compounds comprising Ta or Nb. More specifically, the disclosed precursor compounds utilize certain ligands coupled to Ta and/or Nb such as 1-methoxy-2-methyl-2-propanolate (mmp) to increase volatility. Furthermore, methods of depositing Ta or Nb compounds are disclosed in conjunction with use of Hf and/or Zr precursors to deposit Ta-doped or Nb-doped Hf and/or Zr films. The methods and compositions may be used in CVD, ALD, or pulsed CVD deposition processes.

Abstract: A method of fabricating a surface enhanced Raman scattering (SERS) substrate. In one embodiment, the method has the steps of simultaneously evaporating a metal at a first evaporation rate and a polymer at a second evaporation rate different from the first evaporation rate, to form a nanocomposite of the metal and the polymer, depositing the nanocomposite onto a substrate, and applying an etching process to the deposited nanocomposite on the substrate to remove the polymer material, thereby forming an SERS substrate.

Abstract: A gas barrier film comprising a resin substrate provided thereon at least one layer of a ceramic film, wherein the density ratio Y (=?f/?b) satisfies 1?Y?0.95 and the ceramic film has a residual stress being a compression stress of 0.01 MPa or more and 100 Mpa or less, wherein ?f is the density of the ceramic film and ?b is the density of a comparative ceramic film being formed by thermal oxidation or thermal nitridation of a metal as a mother material of the ceramic film so as to being the same composition ratio of the ceramic film.

Abstract: The present invention is a method for gettering undesirable atomic species from a vaporizing atmosphere during deposition of multi-element thin film phosphor compositions. The method comprises vaporizing one or more getter species immediately prior and/or simultaneously during the deposition of a phosphor film composition within a deposition chamber. The method improves the luminance and emission spectrum of phosphor materials used for full colour ac electroluminescent displays employing thick film dielectric layers with a high dielectric constant.

Abstract: The present invention relates to an enhanced cyclic deposition process suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. The deposition enhancement is derived from ions generated in a plasma. The techniques described reduce the time required for plasma stabilization, thereby reducing deposition time and improving efficiency.

Abstract: Disclosed is a method for fabricating a CuInS2 thin film by metal-organic chemical vapor deposition (MOCVD). The method comprises fabricating a copper thin film by depositing an asymmetric copper precursor on a substrate by MOCVD and fabricating a CuInS2 thin film by depositing an indium-sulfur-containing precursor on the copper thin film by MOCVD. The method enables fabrication of a CuInS2 thin film with a constant composition even under vacuum as well as an argon (Ar) atmosphere. Disclosed is further a CuInS2 thin film fabricated by the method. Disclosed is further a method for fabricating an In2S3 thin film for a window of a solar cell via deposition of an indium-sulfur-containing precursor on the CuInS2 thin film by MOCVD. Disclosed further is an In2S3 thin film fabricated by the method. The In2S3 thin film is useful for a substitute for CdS conventionally used for windows of solar cells and contributes to simplification in fabrication process of solar cells.

Abstract: A layer of material, such as crystalline indium tin oxide (ITO), is formed on top of a substrate by heating the material to a high temperature, while a temperature increase of the substrate is limited such that the temperature of the substrate does not exceed a predetermined temperature. For example, a layer including amorphous ITO can be deposited on top of the substrate, and the amorphous layer can be heated in a surface anneal process using radiation while limiting substrate temperature. Another process can pass electrical current through the amorphous ITO. In another process, the substrate is passed through a high-temperature deposition chamber quickly, such that a portion of a layer of crystalline ITO is deposited, while the temperature increase of the substrate is limited.

Abstract: A method of depositing a film of a first material, such as Cadmium Telluride on to a second material, such as Cadmium Sulphide by a physical vapour deposition process wherein said deposition is performed in an atmosphere having a relatively high ambient pressure, in one embodiment between 50 and 200 Torr.

Abstract: A method for reducing formaldehyde emissions from articles prepared from, or which otherwise comprise formaldehyde-emitting compositions, such as formaldehyde-containing resins, is described. The method relates especially to a method for reducing formaldehyde emissions from products such as cellulose laminates, permanent press (wrinkle-free) textiles, floral foams and ceiling or acoustical tiles, which involves isolating the article in an enclosed space with a formaldehyde scavenger, particularly a formaldehyde scavenger carried by a substrate.

Abstract: A layer deposition method includes: feeding a reactant with a first flow of an inert gas as a carrier gas into a reaction chamber to chemisorb the reactant on a substrate; feeding the first flow of the inert gas to purge the reaction chamber and a first reactant feed line; and feeding the second flow of the inert gas into the reaction chamber through a feed line different from the first reactant feed line.

Abstract: Disclosed are titanium-containing precursors and methods of synthesizing the same. The compounds may be used to deposit titanium, titanium oxide, strontium-titanium oxide, and barium strontium titanate containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition.

Abstract: A method and system are provided for integrated substrate processing in Cu metallization. The method includes providing a substrate in a vacuum processing tool containing a plurality of processing systems configured to process the substrate and a substrate transfer system configured to transfer the substrate under vacuum conditions between the plurality of processing systems, and performing an integrated deposition process on the substrate. The plurality of processing systems and the substrate transfer system maintain a base pressure of background gases at 6.8×10?8 Ton or lower, preferably 5×10?8 Torr or lower, during the integrated deposition process. According to one embodiment, the integrated process includes depositing a barrier metal layer on the substrate, and depositing a Cu layer on the barrier metal layer. According to another embodiment, the integrated process further includes depositing a Ru layer on the barrier metal layer, and depositing a Cu layer on the Ru layer.

Abstract: There is provided a method of depositing a Ge—Sb—Te thin film, including: a Ge—Sb—Te thin-film forming step of feeding and purging a first precursor including any one of Ge, Sb and Te, a second precursor including another one of Ge, Sb and Te and a third precursor including the other one of Ge, Sb and Te into and from a chamber in which a wafer is mounted and forming the Ge—Sb—Te thin film on the wafer; and a reaction gas feeding step of feeding reaction gas while any one of the first to third precursors is fed.

Abstract: A method and apparatus for manufacturing superconducting tape through an integrated process, including the steps of: heat-treating a substrate wound on a drum in a reaction chamber; continuously depositing components, constituting a buffer layer, a superconducting layer, a contact resistance layer, and a protective layer of the superconducting tape, which are supplied from a deposition chamber, on the substrate; and heat-treating the substrate deposited with the components.

Abstract: Embodiments of the invention relate to apparatus and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a chamber lid assembly comprises a channel having an upper portion and a lower portion, wherein the channel extends along a central axis, a housing having an inner region and at least partially defining two or more annular channels, an insert disposed in the inner region and defining the upper portion, the upper portion fluidly coupled with the two or more annular channels, and a tapered bottom surface extending from the bottom portion of the channel to a peripheral portion of the chamber lid assembly.

Abstract: A method for depositing a low dielectric constant film on a substrate is provided. The low dielectric constant film is deposited by a process comprising reacting one or more organosilicon compounds and a porogen and then post-treating the film to create pores in the film. The one or more organosilicon compounds include compounds that have the general structure Si—CX—Si or —Si—O—(CH2)n—O—Si—. Low dielectric constant films provided herein include films that include Si—CX—Si bonds both before and after the post-treatment of the films. The low dielectric constant films have good mechanical and adhesion properties, and a desirable dielectric constant.

Abstract: Method for performing a thermal spray process. Method includes heating and/or accelerating a gas to form an effluent gas stream, feeding a particulate-bearing carrier stream through an axial injection port into the effluent gas stream to form a mixed stream, in which the axial injection port includes a plurality of chevrons located at a distal end of said axial injection port, and impacting the mixed stream on a substrate to form a coating.

Abstract: A method for depositing a low dielectric constant film on a substrate is provided. The low dielectric constant film is deposited by a process comprising reacting one or more organosilicon compounds and a porogen and then post-treating the film to create pores in the film. The one or more organosilicon compounds include compounds that have the general structure Si—CX—Si or —Si—O—(CH2)n—O—Si—. Low dielectric constant films provided herein include films that include Si—CX—Si bonds both before and after the post-treatment of the films. The low dielectric constant films have good mechanical and adhesion properties, and a desirable dielectric constant.

Abstract: A deposition apparatus includes: a plurality of deposition sources, each of which includes a material container and a carrier gas introducing pipe, vaporizes a film-forming material stored in the material container, and transfers vaporized molecules of the film-forming material by using a first carrier gas introduced from the carrier gas introducing pipe; a connecting pipe, which is connected to the plurality of deposition sources and transfers the vaporized molecules of the film-forming material transferred from each deposition source; a bypass pipe, which is connected to the connecting pipe and directly introduces a second carrier gas to the connecting pipe; and a processing container, which includes a built-in discharge mechanism connected to the connecting pipe and forms a film on a target object therein by discharging, from the discharge mechanism, the vaporized molecules of the film-forming material transferred by using the first and second carrier gases.

Abstract: A commercial method for the interior chemical treatment of inflatable balloons, the method including inflating a balloon with air, coating the interior surface of a balloon with a micro-atomized chemical mixture and allowing the chemical mixture to coat and permeate the inner surface of the balloon.

Abstract: A method of introducing gasses through a gas distribution system into a reactor involves flowing the gasses through at least two distinct gas source orifice arrays displaced from one another along an axis defined by a gas flow direction from the gas source orifice arrays towards a work-piece. During different time intervals, a purge gas and different reactive precursors are flowed into the reactor from different ones of the gas source orifice arrays. One of the precursors may be associated with a soft saturating atomic layer deposition half reaction and another of the precursors associated with a strongly saturating atomic layer deposition half reaction. An upper one of the gas source orifice arrays may be a relatively planar gas orifice array.

Abstract: Disclosed herein is a device comprising an evaporator; and a heat exchanger; the heat exchanger being in fluid communication with evaporator; evaporator comprising an outer casing; and an inner casing that is disposed within the outer casing; the inner casing contacting a plate; wherein the inner casing encloses a first conduit that is operative to introduce a carrier fluid into evaporator; and a second conduit that is operative to remove carrier fluid entrained with a precursor; wherein the outer casing is detachably attached to the plate; the plate contacting a first precursor conduit that is operative to introduce the precursor into evaporator from the heat exchanger; where the heat exchanger is disposed proximate to evaporator at a distance effective to maintain the precursor in evaporator at a substantially constant temperature when the ambient temperature around the heat exchanger and evaporator fluctuates by an amount of up to about ±35° C.

Abstract: A method for coating a tool or tool part, includes providing a base structure of the tool or the tool part at a temperature of 850° C. to 950° C. and applying at least one layer to the base structure. One or more layers of the at least one layer is formed of a metal carbonitride of composed of at least one of titanium, zirconium, hafnium, vanadium, niobium, tantalum and chromium. The one or more layers of the at least one layer is deposited by a deposition of a gas containing methane, nitrogen and at least one metal compound. After beginning the applying, the temperature is increased by at least 40° C. to an increased temperature and the deposition is continued for a time at the increased temperature.

Abstract: The present invention relates to ceramic cutting tools, such as, an aluminum oxide with zirconium oxide ceramic cutting tool with diffusion bonding enhanced layer and CVD coatings, particularly useful for machining modern metal materials. The method comprises a chemical reaction with a mixture including nitrogen and aluminum chloride introduced to form a diffusion bonding enhanced layer between the ceramic substrate and the CVD coatings. Thus formed diffusion bonding enhanced layer is highly adherent to the aluminum oxide with zirconium oxide ceramic substrate and significantly enhances the CVD coating properties, thus improving the machining performance in terms of the tool life of zirconium-based aluminum oxide with zirconium oxide ceramic cutting tools.

Abstract: A disclosed film deposition apparatus includes a turntable having in one surface a substrate receiving portion along a turntable rotation direction; a first reaction gas supplying portion for supplying a first reaction gas; a second reaction gas supplying portion for supplying a second reaction gas; a separation area between a first process area where the first reaction gas is supplied and a second process area where the second reaction gas is supplied, the separation area including a separation gas supplying portion for supplying a first separation gas in the separation area, and a ceiling surface opposing the one surface to produce a thin space; a center area having an ejection hole for ejecting a second separation gas along the one surface; and an evacuation opening for evacuating the chamber.

Abstract: A method of forming a thin film of amphiphilic molecules on a substrate by using a resealable vial carrier is provided. The method includes placing the substrate in a vacuum chamber. A resealable cap member of the vial carrier is opened. The vial carrier may contain a liquid or solid amphiphilic material. The open vial carrier is placed within the chamber. The chamber is sealed and a pressure from about 2×10+2 to 5×10?6 torr is applied to the chamber. The vial carrier is heated to a temperature between 100-350° C. The amphiphilic material is vaporized in the chamber. A thin film of amphiphilic molecules is formed on the substrate. The chamber is opened and the substrate having the thin film of amphiphilic molecules thereon is removed. The resealable vial carrier includes a temperature resilient vial carrier and a resealable member selectively disposed about an opening of the vial carrier.

Abstract: A method of depositing a layer onto a substrate, comprising heating an evaporator to a temperature capable of completely evaporating the evaporant to be deposited, dispensing into the evaporator one or more quantized units of the evaporant where the evaporant is completely vaporized, providing an area vapor dispenser having a plurality of apertures, and directing the vaporized evaporant from the evaporator to the area vapor dispenser so that the evaporant is dispensed through the apertures to deposit the layer on the substrate.

Abstract: Methods and compositions for depositing metal films are disclosed herein. In general, the disclosed methods utilize precursor compounds comprising gold, silver, or copper. More specifically, the disclosed precursor compounds utilize pentadienyl ligands coupled to a metal to increase thermal stability. Furthermore, methods of depositing copper, gold, or silver are disclosed in conjunction with use of other precursors to deposit metal films. The methods and compositions may be used in a variety of deposition processes.

Abstract: Based on designs concerning boron nitride thin-films each including boron nitride crystals in acute-ended shapes excellent in field electron emission properties, and designs of emitters adopting such thin-films, it is aimed at appropriately controlling a distribution state of such crystals to thereby provide an emitter having an excellent efficiency and thus requiring only a lower threshold electric field for electron emission. In a design of a boron nitride thin-film emitter comprising crystals that are each represented by a general formula BN, that each include sp3 bonded boron nitride, sp2 bonded boron nitride, or a mixture thereof, and that each exhibit an acute-ended shape excellent in field electron emission property; there is controlled an angle of a substrate relative to a reaction gas flow upon deposition of the emitter from a vapor phase, thereby controlling a distribution state of the crystals over a surface of the thin-film.

Abstract: The invention discloses a composition comprising a hybrid composite organic-inorganic membrane. The hybrid organic-inorganic membrane according to the present invention may comprise an amorphous porous layer incorporating organic functionalities. The amorphous porous layer may be deposited on a porous alumina substrate by chemical vapor deposition (CVD). The amorphous porous layer may comprise a single top-layer (STL), multiple top-layers (MTL) or mixed top-layers (XTL). The substrate may comprise a single layer or multiple graded layers of alumina.

Abstract: The present invention relates to a method of forming a metal-nitride film onto a surface of an object to be processed in a processing container in which a vacuum can be created. The method of the invention includes: a step of continuously supplying an inert gas into a processing container set at a low film-forming temperature; and a step of intermittently supplying a metal-source gas into the processing container, during the step of continuously supplying the inert gas. During the step of intermittently supplying the metal-source gas, a nitrogen-including reduction gas is supplied into the processing container at the same time that the metal-source gas is supplied, during a supply term of the metal-source gas. The nitrogen-including reduction gas is also supplied into the processing container for a term shorter than a non-supply term of the metal-source gas, during the non-supply term of the metal-source gas.

Abstract: A gas supply device 3 includes a device body 31 forming a substantially conical gas-conducting space 32 for conducting gases therethrough from a diametrally reduced end 32a of the space 32 to a diametrally enlarged end 32b thereof, gas introduction ports 61a to 63a, 61b to 63b, and 64, each provided near the diametrally reduced end 32a of the gas-conducting space 32 in the device body 31 to introduce the gases into the gas-conducting space 32, and a plurality of partitioning members 41 to 46 provided in the gas-conducting space 32 of the device body 31 to partition the gas-conducting space 32 concentrically. The partitioning members 42 to 46 arranged adjacently to each other at a radially outer side of the gas-conducting space 32 are greater than the adjacently arranged partitioning members 41 to 45 at a radially inner side in dimensionally diverging rate per partitioning member.

Abstract: An MOCVD reactor such as a rotating disc reactor (10) is equipped with a gas injector head having diffusers (129) disposed between adjacent gas inlets. The diffusers taper in the downstream direction. The injector head desirably has inlets (117) for a first gas such as a metal alkyl disposed in radial rows which terminate radially inward from the reactor wall to minimize deposition of the reactants on the reactor wall. The injector head desirably also has inlets (125) for a second gas such as ammonia arranged in a field between the rows of first gas inlets, and additionally has a center inlet (135) for the second gas coaxial with the axis of rotation.

Abstract: A carrier for an object, preferably a substrate of a semiconductor component such as a wafer, includes a receiving element for the object and gas outlets arranged below the receiving element along the object received. At least sections of the carrier are made of a material which including stabilizing fibers and having a porosity which forms the gas outlets, in order to enable a desired gas to exit from the gas outlets in a dosed and finely distributed manner.

Abstract: A vapor deposition reactor and a method for forming a thin film. The vapor deposition reactor includes first to third portions arranged along an arc of a circle. The first portion includes at least one first injection portion for injecting a material to a recess in the first portion. The second portion is adjacent to the first portion and has a recess communicatively connected to the recess of the first portion. The third portion is adjacent to the second portion and has a recess communicatively connected to the recess of the second portion and an exhaust portion for discharging the material from the vapor deposition reactor.

Abstract: The present disclosure describes methods for preparing semiconductor structures, comprising forming a Ge layer on a semiconductor substrate using an admixture of (a) (GeH3)2CH2 and Ge2H6; (b) GeH3CH3 and Ge2H6; or (c) (GeH3)2CH2, GeH3CH3 and Ge2H6, wherein in all cases, Ge2H6 is in excess. The disclosure further provides semiconductor structures formed according to the methods of the invention as well as compositions comprising an admixture of (GeH3)2CH2 and/or GeH3CH3 and Ge2H6 in a ratio of between about 1:5 and 1:30. The methods herein provide, and the semiconductor structures provide, Ge layers formed on semiconductor substrates having threading dislocation density below 105/cm2 which can be useful in semiconductor devices.

Abstract: A method of ruthenium layer formation for high aspect ratios, interconnect features is described. The ruthenium layer is formed using a cyclical deposition process. The invention generally provides a method of forming a film on a substrate surface including positioning a substrate within a process chamber, exposing a ruthenium-containing compound to the substrate surface, purging the process chamber with a purge gas, reducing the ruthenium-containing compound with a reductant to form a ruthenium layer on the substrate surface and purging the process chamber with the purge gas. The ruthenium-containing compound is selected from the group consisting of bis(dialkylpentadienyl)ruthenium compounds, bis(alkylpentadienyl) ruthenium compounds, bis(pentadienyl)ruthenium compounds, and combinations thereof.

Abstract: A device and a method for facilitating the deposition and patterning of organic materials onto substrates utilizing the vapor transport mechanisms of organic vapor phase deposition is provided. The device includes one or more nozzles, and an apparatus integrally connected to the one or more nozzles, wherein the apparatus includes one or more source cells, a carrier gas inlet, a carrier gas outlet, and a first valve capable of controlling the flow of a carrier gas through the one or more source cells. The method includes moving a substrate relative to an apparatus, and controlling the composition of the organic material and/or the rate of the organic material ejected by the one or more nozzles while moving the substrate relative to the apparatus, such that a patterned organic layer is deposited over the substrate.

Abstract: A CVD method for forming a metal film on a substrate by using a metal carbonyl gas includes a preparing step for setting a vacuum chamber at a vacuum pressure and heating the substrate in the vacuum chamber to a first temperature where the metal carbonyl gas is decomposed. Also included are a supplying step for supplying the metal carbonyl gas into the vacuum chamber while exhausting the vacuum chamber with a first vacuum pumping speed and a removing step for removing a decomposed gas of the metal carbonyl gas by stopping supplying of the metal carbonyl gas and quickly exhausting the vacuum chamber with a second vacuum pumping speed sufficiently higher than the first vacuum pumping speed. The supplying step and the removing step can be repeatedly as desired.

Abstract: The invention is directed to CVD methods and systems that can be utilized to form nanostructures. Exceptionally high product yields can be attained. In addition, the products can be formed with predetermined particle sizes and morphologies and within a very narrow particle size distribution. The systems of the invention include a CVD reactor designed to support the establishment of a convective flow field within the reactor at the expected carrier gas flow rates. In particular, the convective flow field within the reactor can include one or more flow vortices. The disclosed invention can be particularly beneficial for forming improved thermoelectric materials with high values for the figure of merit (ZT).

Abstract: A deposition apparatus, and a canister for the deposition apparatus capable of maintaining a predetermined amount of source material contained in a reactive gas supplied to a deposition chamber when the source material is deposited on a substrate by atomic layer deposition includes a main body, a source storage configured to store a source material, a heater disposed outside the main body, and a first feed controller configured to control the source material supplied to the main body from the source storage.

Abstract: A multi-station deposition apparatus capable of simultaneous processing multiple substrates using a plurality of stations, where a gas curtain separates the stations. The apparatus further comprises a multi-station platen that supports a plurality of wafers and rotates the wafers into specific deposition positions at which deposition gases are supplied to the wafers. The deposition gases may be supplied to the wafer through single zone or multi-zone gas dispensing nozzles.

Abstract: Methods of passivating a metal surface are described, the methods comprising the steps of exposing the metal surface to a silicon-containing passivation material, evacuating the metal surface, exposing the treated surface to a gas composition, having a concentration of reactive gas that is greater than an intended reactive gas concentration of gas to be transported by the metal surface, evacuating the metal surface to remove substantially all of the gas composition to enable maintenance of an increased shelf-life, low concentration reactive gas at an intended concentration, and exposing the metal surface to the reactive gas at the intended reactive gas concentration. Manufactured products, high stability fluids, and methods of making same are also described.

Abstract: An apparatus and method improves heating of a solid precursor inside a sublimation vessel. In one embodiment, inert, thermally conductive elements are interspersed among units of solid precursor. For example the thermally conductive elements can comprise a powder, beads, rods, fibers, etc. In one arrangement, microwave energy can directly heat the thermally conductive elements.

Abstract: A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.