Abstract: A radiation-sensitive composition containing a resist compound having a high sensitivity, a high resolution, a high etching resistance, and a low outgas which forms a resist pattern with a good shape is described.

Abstract: The present invention provides a compound shown by the formula (1), wherein R1 represents a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group; A represents a single bond or a linear divalent hydrocarbon group having 1 to 30 carbon atoms or a branched or cyclic divalent hydrocarbon group having 3 to 30 carbon atoms, in which the hydrocarbon group may contain a heteroatom, and a part or all of hydrogen atoms in the hydrocarbon group may be substituted with a group containing a heteroatom; “n” represents 0 or 1, provided that “n” is 0 when A is a single bond; and M+ represents a cation. This compound is suitable as a raw material of a polymer compound usable for a base resin of a resist composition that has high resolution and high sensitivity and is excellent in balance of lithography properties such as LWR and CDU.

Abstract: A polymeric compound including a structural unit (a0) represented by general formula (a0-1) shown below and a polycyclic group-containing structural unit (a2m) other than the structural unit (a0), the structural unit (a2m) containing a lactone-containing polycyclic group, a —SO2-containing polycyclic group or a carbonate-containing polycyclic group, and a resist composition including the same: wherein R0 represents a hydrocarbon group of 1 to 6 carbon atoms which may have a substituent, or a hydrogen atom; Ya0 represents a single bond or a divalent linking group; L represents an ester bond; and Ra0 represents a polycyclic group having a bridged ring polycyclic skeleton or a condensed ring polycyclic skeleton, which has in its skeleton —C(?O)O— or —SO2—, and at least one of an alkyl group, an alkoxy group, a halogen atom and a halogenated alkyl group.

Abstract: A photoresist is exposed to light under a condition that sensitivity of a second portion of the photoresist on a recessed portion of a base layer is higher than sensitivity of a first portion of the photoresist on a projecting portion of the base layer.

Abstract: Disclosed is a binder for secondary battery electrodes, the binder including polymer particles being prepared from monomers comprising (A) (meth)acrylic acid ester based monomers; (B) at least one monomer selected from the group consisting of an acrylate based compound, a styrene based compound, and a compound having a cyano group; (C) unsaturated monocarbonic acid based monomers; (D) (meth)acrylamide based monomers; and (E) monomers including at least one epoxy group for crosslinking, the polymer particles having an average particle diameter of 0.3 micrometers to 0.7 micrometers.

Abstract: A salt represented by formula (I): wherein Q1 and Q2 independently represent a fluorine atom or a C1 to C6 perfluoroalkyl group, R1 and R2 in each occurrence independently represent a hydrogen atom, a fluorine atom or a C1 to C6 perfluoroalkyl group, z represents an integer of 0 to 6, X1 represents *—CO—O—, *—O—CO— or —O—, * represents a binding position to C(R1)(R2) or C(Q1)(Q2), A1 represents a C4 to C24 hydrocarbon group having a C4 to C18 divalent alicyclic hydrocarbon moiety, A2 represents a C2 to C12 divalent hydrocarbon group, R3 and R4 independently represent a hydrogen atom or a C1 to C6 monovalent saturated hydrocarbon group, R5 represents a hydrogen atom, a fluorine atom, or a C1 to C6 alkyl group where a hydrogen atom may be replaced by a fluorine atom, and Z+ represents an organic cation.

Abstract: A radiation-sensitive resin composition comprising a binder resin (A), radiation-sensitive compound (B), cross-linking agent (C), and silane coupling agent (D) represented by the following general formula (1) is provided. In the general formula (1), R1 to R3 respectively independently are a monovalent alkyl group having 1 to 5 carbon atoms. R4 is a divalent alkylene group having 1 to 10 carbon atoms, R5 is a hydrogen atom or monovalent alkyl group having 1 to 5 carbon atoms, and R6 to R10 are a hydrogen atom or monovalent alkyl group having 1 to 5 carbon atoms.

Abstract: The present invention provides a photoresist composition and a color filter manufacturing method. The photoresist composition of the present invention includes a first solvent, a second solvent, a photo initiator, a monomer, a polymer, an additive, and a pigment. After heating, phase separation occurs between the first solvent and the second solvent. After the phase separation, the first solvent is located above the second solvent. At least one of the photo initiator, the monomer, the polymer, and the additive has solubility in the second solvent that is higher than that in the first solvent so as to alleviate the wrinkling issue caused by different degrees of solidification between upper and lower layers of the photoresist during a manufacturing process of a color filter.

Abstract: A multilayer ceramic capacitor includes a ceramic base body and is structured such that fluorine is present between the ceramic base body and a sintered metal layer or between a sintered metal layer and a conductive resin layer.

Abstract: A method for producing a touch input sensor includes stacking an intermediate resin layer (33) containing a photosensitive resin and an ultraviolet absorber and a transparent conductive film (32) on both surfaces of a transparent substrate (10) in that order, performing a pattern exposure with ultraviolet rays (L) applied to both surface sides, and performing developing to form a transparent electrode formed of the transparent conductive film (32) on both surfaces of the transparent substrate (10).

Abstract: A radiation-sensitive resin composition comprises: a polymer, and a radiation-sensitive acid generator. The polymer comprises a structural unit comprising: an acid-labile group; and an oxoacid group or phenolic hydroxyl group protected by the acid-labile group. The acid-labile group is represented by formula (1). R1 and R2 each independently represent a divalent organic group having 1 to 20 carbon atoms. R3 represents a monovalent group having 1 to 40 atoms and having at least one selected from the group consisting of an oxygen atom, a sulfur atom and a nitrogen atom. * denotes a binding site to the oxy group in the oxoacid group or phenolic hydroxyl group protected.

Abstract: To a resist composition comprising a polymer comprising recurring units having an acid labile group and an acid generator is added a metal-acid complex. The metal is Ce, Cu, Zn, Fe, In, Y, Yb, Sn, Tm, Sc, Ni, Nd, Hf, Zr, Ti, La, Ag, Ba, Ho, Tb, Lu, Eu, Dy, Gd, Rb, Sr or Cs. The acid is a fluoroalkylsulfonic acid, fluorinated arylsulfonic acid, fluorinated tetraphenylboric acid, fluoroalkylsulfonimidic acid or fluoroalkylsulfonemethide acid. Due to a high contrast of alkaline dissolution rate before and after exposure, high resolution, high sensitivity, and controlled acid diffusion rate, the composition forms a pattern with satisfactory profile and minimal line edge roughness.

Abstract: A method of producing a conductive pattern includes a light-exposing step of exposing a layer or pattern including conductive particles A, an organic compound B having an unsaturated double bond and a photopolymerization initiator C, and positioned over a substrate to light rays having a broad spectrum, to thereby produce a conductive layer or a conductive pattern.

Abstract: Disclosed is a to provide a curable composition for imprints capable of keeping a good patternability and of producing less defects even after repetitive pattern transfer. The curable composition for imprints comprising: a polymerizable compound (A); a photo-polymerization initiator (B); and a non-polymerizable compound (C) having a polyalkylene glycol structure having at least one terminal hydroxy group, or at least one etherified terminal hydroxy group, and containing substantially no fluorine atom and no silicon atom.

Abstract: An improved resist material and a technique for patterning a workpiece such as an integrated circuit workpiece that offers improved resistance to environmental contaminants is provided. In an exemplary embodiment, the method includes receiving a workpiece and applying to the workpiece a resist material containing a protectant disbursed throughout. A thermal process is performed on the workpiece that causes the protectant to become concentrated in an upper region of the resist material. The resist material is exposed in a lithographic process and the exposed resist material is developed to define a pattern within the resist material. In some such examples, the protectant is selected to reduce an effect of an environmental contaminant without affecting an acid/base ratio of the resist material. In some such embodiments, the protectant includes a hydrophobic functional group.

Abstract: A resist composition includes (A1) a resin having an acid-labile group, (A2) a resin which includes a structural unit represented by formula (I), and an acid generator: wherein R1 represents a hydrogen atom, a halogen atom or a C1 to C6 alkyl group in which a hydrogen atom can be replaced by a halogen atom, R2 represents a C1 to C12 fluorinated saturated hydrocarbon group, A1 represents a C2 to C6 alkanediyl group or *-A2-X1-(A3-X2)a-A4b-, * represents a binding site to an oxygen atom in —O—CO—, A2, A3 and A4 each independently represent a C1 to C6 alkanediyl group, X1 and X2 each independently represent —O—, —CO—O— or —O—CO—, and “a” represents 0 or 1.

Abstract: A photoresist composition and methods of using the same are disclosed. The photoresist includes a polymer backbone, an acid labile group (ALG) chemically bonded to the polymer backbone, a photo-acid generator (PAG), a solvent, and a silicon-containing unit that is chemically bonded to one of: the ALG and a crosslinker. A method of using the photoresist composition includes forming a layer of the photoresist over a substrate, performing an exposing process to the photoresist layer; and developing the photoresist layer, thereby forming a patterned photoresist layer. The patterned photoresist layer includes the silicon-containing unit.

Abstract: A photosensitive material and methods of making a pattern on a substrate are disclosed. The photosensitive material includes a polymer that turns soluble to a developer solution after a chemically amplified reaction, and at least one chemical complex having a single diffusion length. The material includes at least one photo-acid generator (PAG) linked to at least one photo decomposable base (PDB) or quencher.

Abstract: A photoresist composition includes an alkali soluble resin, a hardening agent, a photo acid generator, and an organic solvent. The photo acid generator may be represented by Formula 1, in which L11 is selected from a single bond, a C1-C10 alkylene group, a C2-C10 alkenylene group, and a C2-C10 alkynylene group; and R11 is selected from a C6-C15 aryl group, or a C6-C15 aryl group with at least one substitutent group selected from a group comprising deuterium, a hydroxyl group, a C1-C10 alkyl group, a C1-C10 alkoxy group, and a C6-C15 aryl group.

Abstract: Hydroxyl moieties are formed on a surface over a semiconductor substrate. The surfaces are silylized to replace the hydroxyl groups with silyl ether groups, the silyl ether groups being of the form: —OSiR1R2R3, where R1, R2, and R3 are each hydrocarbyl groups comprising at least one carbon atom. Silylation protects the wafers from forming defects through hydrolysis while the wafers are being transported or stored under ambient conditions.

Abstract: A resist composition is provided comprising (A) a fluorine-containing polymer, (B) a base resin, (C) an acid generator, and (D) a solvent mixture of a first solvent which is a C5-C8 ketone, C4-C6 alcohol, C3-C6 ether or C4-C9 ester and a second solvent which is a lactone ring-containing C6-C9 compound. A pattern is formed by coating the resist composition, prebake, exposure, and development. In immersion lithography, the resist film is improved in water slip. In EB or EUV lithography, outgassing is suppressed and edge roughness is reduced.

Abstract: The time when at least a monomer and a chain transfer agent are supplied in a reactor and the solution temperature in the reactor has reached a predetermined polymerization temperature is set as starting time (T0), and the time when a process to terminate the polymerization is started is set as ending time (T1). A polymerization initiator is supplied into the reactor between (T0) and just before [(T1)?(T0)/2] and between [(T1)?(T0)/2] and (T1). The total mass of the polymerization initiator supplied to the reactor between (T0) and (T1) is set as (IA), and the total mass of the polymerization initiator supplied between [(T0?T1)/2] and (T1) is set as (IB). The (IA) is set 50 to 100 mass % of the entire polymerization initiator. Using a production method in which 0.50<(IB)/(IA)<1.00 is satisfied, a polymer is produced at a high polymerization rate showing less variation of molecular weight and having less amount of chain transfer agent residue remaining at an end of the polymer chain.

Abstract: A photoresist polymer includes a first repeating unit and a second repeating unit. The first repeating unit includes a fluorine leaving group that is configured to be removed by a photo-chemical reaction. The second repeating unit includes a silicon-containing leaving group that is configured to be removed by the fluorine leaving group when the fluorine leaving group is removed from the first repeating unit.

Abstract: A photosensitive resin composition comprises: a component (A): a resin having a phenolic hydroxyl group; a component (B): a compound having a methylol group or an alkoxyalkyl group; a component (C): an aliphatic compound having two or more functional groups, the functional groups being one or more types selected from an acryloyloxy group, a methacryloyloxy group, a glycidyloxy group and a hydroxyl group; and a component (D): a photosensitive acid generator.

Abstract: Embodiments encompassing a series of compositions containing polymers of norbornadiene and maleic anhydride monomers which are useful in forming a variety of photopatternable structures are disclosed and claimed. The compositions are useful as permanent dielectric materials. More specifically, embodiments encompassing compositions containing a series of ter- and tetrapolymers of a variety of norbornadiene, maleic anhydride, maleimide and norbornene-type cycloolefinic monomers in which maleic anhydride is fully or partially hydrolyzed (i.e., ring opened and fully or partially esterified), and a photoactive compound are disclosed, which are useful in forming permanent dielectric materials having utility in a variety of electronic material applications, among various other uses.

Abstract: The present invention relates to a process for the laser treatment of effect pigment-containing coatings, to coatings produced using this process, and to the use thereof in decorative and security products.

Abstract: A positive resist composition comprising: (A) a resin which comes to have an enhanced solubility in an alkaline developing solution by an action of an acid; (B) a compound which generates an acid upon irradiation with actinic rays or a radiation; (C) a fluorine-containing compound containing at least one group selected from the groups (x) to (z); and (F) a solvent, and a method of pattern formation with the composition: (x) an alkali-soluble group; (y) a group which decomposes by an action of an alkaline developing solution to enhance a solubility in an alkaline developing solution; and (z) a group which decomposes by an action of an acid.

Abstract: There are provided A pattern formation method, including: (1) forming a film using an active light-sensitive or radiation-sensitive resin composition; (2) exposing the film to active light or radiation; and (3) developing the exposed film using a developer including an organic solvent, wherein the active light-sensitive or radiation-sensitive resin composition contains a resin (A) having specific 3 repeating units.

Abstract: A composition formed from ingredients comprising: an epoxy; a polyvinyl phenol; a cross-linking agent; an epoxy silane; and a solvent is disclosed. A printable medium and other devices made from the composition are also disclosed.

Abstract: A polymer comprising recurring units derived from a polymerizable monomer having two structures of hydroxyphenyl methacrylate having a hydroxy group substituted with an acid labile group is used as base resin in a positive resist composition, especially chemically amplified positive resist composition. The resist composition forms a resist film which is processed by lithography into a pattern of good profile having a high resolution, minimal edge roughness, and etch resistance.

Abstract: A non-photosensitive resin composition including: a self-cross-linkable copolymer having structural units of Formulae (1) and (2): wherein each R0 is independently a hydrogen atom or methyl group; X is an —O— group or an —NH— group; R1 is a single bond or a C1-6 alkylene group; R2 is a C1-6 alkyl group; a is an integer of 1 to 5, b is an integer of 0 to 4, and when a and b satisfy 1?a+b?5, and b is 2, 3, or 4, such R2 optionally differ from each other; R3 is a divalent organic group of Formula (I), Formula (II), or Formula (III), and R4 is an organic group having an epoxy group: wherein c is an integer of 0 to 3, d is an integer of 1 to 3, and each e is independently an integer of 2 to 6; and a solvent.

Abstract: A salt represented by formula (I): wherein Q1 and Q2 independently represent a fluorine atom or a C1 to C6 perfluoroalkyl group, R1 and R2 each independently represent a hydrogen atom, a fluorine atom or a C1 to C6 perfluoroalkyl group, z represents an integer of 0 to 6, R3 represents a hydrogen atom, a fluorine atom, a C1 to C12 alkyl group or a C1 to C12 fluorinated alkyl group, R4 represents a C1 to C12 fluorinated alkyl group, L2 represents a single bond, a C1 to C12 divalent saturated hydrocarbon group, etc., R5 represents a hydrogen atom, a halogen atom or a C1 to C6 alkyl group that may have a halogen atom, L1 represents a group represented by formula (b1-1), etc., * represents a bonding site to —CR3R4; Lb2 and Lb3 each independently represent a single bond or a C1 to C22 divalent saturated hydrocarbon group; Z+ represents an organic cation.

Abstract: Methods for the deposition of a SiCON film by molecular layer deposition using a multi-functional amine and a silicon containing precursor having a reactive moiety.

Abstract: In at least one embodiment of a method for forming a pattern having a hollow structure, a light-absorbing layer capable of absorbing light is formed on a surface of a photosensitive resin film. Subsequently, a substrate having a protrusion and the photosensitive resin film are bonded together so that the protrusion and the light-absorbing layer come into contact with each other. Then, the photosensitive resin film and the light-absorbing layer are patterned at one time by photolithography.

Abstract: A resist composition contains (A) a resin having a monocyclic or polycyclic cycloaliphatic hydrocarbon structure, the resin increasing its solubility in an alkali developer by an action of acid, (B) a compound generating acid upon irradiation with one of an actinic ray and a radiation, (C) particular an alkali soluble compound, and (D) a solvent.

Abstract: A semiconductor device includes a semiconductor substrate. The semiconductor substrate includes a plurality of first doping regions of a first doping structure arranged at a main surface of the semiconductor substrate and a plurality of second doping regions of the first doping structure arranged at the main surface of the semiconductor substrate. The first doping regions of the plurality of first doping regions of the first doping structure include dopants of a first conductivity type with different doping concentrations. Further, the second doping regions of the plurality of second doping regions of the first doping structure include dopants of a second conductivity type with different doping concentrations. At least one first doping region of the plurality of first doping regions of the first doping structure partly overlaps at least one second doping region of the plurality of second doping regions of the first doping structure causing an overlap region arranged at the main surface.

Abstract: A pattern forming process is provided comprising the steps of applying a resist composition comprising a polymer comprising recurring units having formula (1a) and/or (1b), an acid generator and a solvent onto a substrate, baking to form a resist film, exposing the resist film to high-energy radiation, baking, and developing in an alkaline developer to form a negative tone pattern.

Abstract: A method of manufacturing a semiconductor device includes irradiating a first photoresist layer via a light source, measuring a first exposure intensity of the first photoresist layer, irradiating a second photoresist layer via the light source, measuring a second exposure intensity of the second photoresist layer, subtracting the second exposure intensity from the first exposure intensity, and subsequent to the subtracting, exposing a third photoresist layer formed on a semiconductor substrate by using the light source, wherein an out-of-band (OoB) extreme ultraviolet (EUV) light eliminating layer is formed on the second photoresist layer.

Abstract: A resist composition contains (A) a resin being insoluble or poorly soluble in alkali aqueous solution, but becoming soluble in an alkali aqueous solution by the action of an acid, (B) an acid generator represented by the formula (II), and (D) a compound represented by the formula (I), wherein R1 and R2, m and n, R3 and R4, X1, R5 and Z1+ are defined in the specification.

Abstract: The present invention provides a method for forming a multi-layer film, including (i) forming an under layer film on a substrate by applying an under layer film material containing one or more species selected from resins having a repeating unit shown by the formula (1), resins having a repeating unit shown by the formula (2), and compounds shown by the formula (3), each containing a fluorene structure, and curing the same by heat treatment at 300° C. to 800° C. for 10 to 4,000 seconds; (ii) forming a titanium nitride film or a titanium oxynitride film on the under layer film; (iii) forming a hydrocarbon film on the titanium nitride film or the titanium oxynitride film; and (iv) forming a silicon oxide film on the hydrocarbon film. This can form a multi-layer film with reduced reflectance useful for a patterning process with high dimensional accuracy in dry etching.

Abstract: A wire terminal assembly is disclosed for a cable conductive core of a first metal core. A conductive terminal of a second metal is connected to the conductive cable core along a conductive connection interface. A coating is disposed over the conductive connection interface. The coating includes the free radical addition polymerizate of a coating composition of: (1) an oligomer comprising at least two active unsaturated bonds, and (2) an acrylic monomer.

Abstract: A positive resist composition is provided comprising (A) a resin comprising recurring units having adamantane ring and recurring units having cyclopentyl so that the resin may increase its alkali solubility under the action of acid, (B) a mixture of sulfonium salts, and (C) a solvent. By coating the resist composition as a resist film, forming a protective film thereon, and effecting immersion lithography, a pattern of good profile is formed at a high resolution.

Abstract: A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, and which includes a base component (A) which exhibits changed solubility in a developing solution under action of acid, the base component (A) including a polymeric compound (A1) having a structural unit (a0) represented by general formula (a0-0) shown below (wherein V11 represents an aliphatic cyclic group with or without a substituent; R1 represents a lactam-containing cyclic group or a sultam-containing cyclic group; Y1 represents an oxygen atom (—O—), an ester bond (—C(?O)—O—) or a single bond; and W2 represents a group formed by a polymerization reaction of a polymerizable group-containing group).

Abstract: A thiosulfate polymer composition includes an electron-accepting photosensitizer component, either as a separate compound or as an attachment to the thiosulfate polymer. The thiosulfate polymer composition can be applied to various articles, or used to form a predetermined polymeric pattern after photothermal reaction to form crosslinked disulfide bonds, removing non-crosslinked polymer, and reaction with a disulfide-reactive material. Such thiosulfate polymer compositions can also be used to sequester metals in nanoparticulate form, and as a way for shaping human hair in hairdressing operations.

Abstract: Described herein are oral care compositions comprising a silsesquioxane silicone resin and a solvent; and methods of making and using the same.

Abstract: Provided are chemically amplified resist compositions that include acid-labile sulfonate-ester photoresist polymers that are developable in an organic solvent. The chemically amplified resists produce high resolution positive tone development (PTD) and negative tone development (NTD) images depending on the selection of organic development solvent. Furthermore, the dissolution contrast of the traditional chemically amplified resists may be optimized for dual tone imaging through the addition of a photoresist polymer comprising an acid-labile sulfonate-ester moiety.

Abstract: There is provided a pattern forming method, including: (1) forming a film using an actinic ray-sensitive or radiation-sensitive resin composition, (2) exposing the film with actinic ray or radiation, (3) developing the film exposed by using a developer containing an organic solvent, wherein the actinic ray-sensitive or radiation-sensitive resin composition contains (A) a resin having a repeating unit (R) with a structural moiety capable of decomposing upon irradiation with an actinic ray or radiation to generate an acid, and (B) a solvent, and the developer contains an additive that causes at least one interaction selected from the group consisting of an ionic bond, a hydrogen bond, a chemical bond and a dipole interaction with respect to a polar group contained in the resin (A) after the exposing.

Abstract: Provided is a modified hydroxy naphthalene novolak resin which is optimal for a photosensitive composition and a resist material having high optical sensitivity, resolution, and alkali developability, and excellent heat resistance and moisture absorption resistance, and the modified hydroxy naphthalene novolak resin includes a structural moiety (I) represented by Structural Formula as a repeating unit: wherein R1is any one of a hydrogen atom, a tertiary alkyl group, an alkoxyalkyl group, an acyl group, an alkoxycarbonyl group, a hetero atom-containing cyclic hydrocarbon group, and a trialkylsilyl group; m is 1 or 2; R2's each independently is any one of a hydrogen atom, an alkyl group, an alkoxy group, an aryl group, an aralkyl group, and a halogen atom; and at least one of the R1's present in the resin is any one of a tertiary alkyl group, an alkoxyalkyl group, an acyl group, an alkoxycarbonyl group, a hetero atom-containing cyclic hydrocarbon group, and a trialkylsilyl group.

Abstract: Provided are a novel negative chemically-amplified photoresist and an imaging method thereof. The negative chemically-amplified photoresist comprises phenol resin, a photo-acid generator, a cross-linking agent, an alkaline additive, a sensitizing agent and a photoresist solvent, wherein the phenol resin is a host material of the novel negative chemically-amplified photoresist; the photo-acid generator is capable of generating an acid with a certain strength under illumination; and the cross-linking agent can undergo a condensation reaction with a phenolic hydroxyl group or an ortho-/para-hydroxymethyl functional group. The imaging method of the novel negative chemically-amplified photoresist comprises coating, baking, exposure, baking, developing and other steps. The chemically-amplified negative photoresist of the present invention can improve the resolution and photospeed of photoresists effectively.

Abstract: Provided is a method of forming a pattern and an actinic-ray- or radiation-sensitive resin composition that excels in the limiting resolving power, roughness characteristics, exposure latitude (EL) and bridge defect performance. The method of forming a pattern includes (1) forming an actinic-ray- or radiation-sensitive resin composition into a film, (2) exposing the film to light, and (3) developing the exposed film with a developer containing an organic solvent. The actinic-ray- or radiation-sensitive resin composition contains (A) a resin containing a repeating unit with a structural moiety that is configured to decompose when exposed to actinic rays or radiation to thereby generate an acid, and (B) a solvent.