Abstract: The present invention relates to a radiation-sensitive resin composition that contains: a compound that has a structure represented by the following formula (1); a first polymer that includes a fluorine atom; and a solvent. In the following formula (1), X represents a carbonyl group, a sulfonyl group or a single bond. Y+ represents a monovalent radiation-degradable onium cation. The first polymer preferably has at least one selected from the group consisting of a structural unit represented by the following formula (2a) and a structural unit represented by the following formula (2b). The first polymer preferably includes an alkali-labile group. The first polymer preferably includes an acid-labile group. It is preferred that a radiation-sensitive acid generator is further contained.

Abstract: An acid-labile hyperbranched copolymer is formed by copolymerizing monomers that include a difunctional monomer and a mono(meth)acrylate ester. The difunctional monomer includes at least one formal group, acetal group, or ketal group that makes the copolymer acid-labile. The copolymer is useful as a component of a photoresist composition that provides low line width roughness, among other desirable photolithographic properties.

Abstract: A compound having a group represented by formula (Ia): wherein R1 and R2 each independently represent a C1 to C8 fluorinated alkyl group, ring W represents a C5 to C18 alicyclic hydrocarbon group that may have a substituent, and * represents a binding site.

Abstract: A salt having a group represented by formula (a): wherein Xa and Xb each independently represent an oxygen atom or a sulfur atom, X1 represents a divalent group having an alicyclic hydrocarbon group where a methylene group may be replaced by an oxygen atom or a carbonyl group, and where a hydrogen atom may be replaced by a hydroxy group or a fluorine atom, and * represents a binding site.

Abstract: Photoresist pattern trimming compositions comprise: a polymer that is soluble in a 0.26 normality aqueous tetramethylammonium hydroxide solution; and a solvent system, wherein the solvent system comprises one or more monoether solvents in a combined amount of from 50 to 98 wt % based on the solvent system. The compositions find particular applicability in the manufacture of semiconductor devices.

Abstract: Disclosed are an auto-repairing composition for overcoat layer, a method of producing the same, and a display apparatus. The composition for overcoat layer comprising 1-10 wt % of microcapsules based on the total weight of the composition for overcoat layer, said microcapsule including a capsule wall and a capsule core, wherein the capsule wall comprises an alkali-insoluble resin, and the capsule core comprises, based on the total weight of the capsule core, 30-60 wt % of a photo-curable unsaturated oligomer, 30-60 wt % of a photo-polymerizable monomer, 1-10 wt % of a photo-initiator, and 0-5 wt % of additive.

Abstract: The present invention provides a conductive polymer composite including: (A) a ?-conjugated polymer, and (B) a dopant polymer which contains a repeating unit “a” shown by the following general formula (1) and having a weight-average molecular weight in the range of 1,000 to 500,000. There can be provided a conductive polymer composite which has excellent filterability and film-formability by spin coating, and can form a conductive film having high transparency and excellent flatness. wherein R1 represents a hydrogen atom or a methyl group; R2 represents any of a single bond, an ester group, and a linear, branched, or cyclic hydrocarbon group having 1 to 12 carbon atoms, the hydrocarbon group optionally containing an ether group, an ester group, or both; “Z” represents any of a single bond, a phenylene group, a naphthylene group, an ether group, and an ester group; and “a” is a number satisfying 0<a?1.0.

Abstract: A method of semiconductor device fabrication that includes sequentially forming an interfacial conductive layer and an etch stop layer on a resistive memory layer; forming a main conductive layer on the etch stop layer; exposing a portion of the etch stop layer by patterning the main conductive layer; exposing a portion of the interfacial conductive layer by patterning the portion of the etch stop layer; forming an upper electrode structure by patterning the portion of the interfacial conductive layer; cleaning a surface of the upper electrode structure and an exposed surface of the resistive memory layer; and patterning the resistive memory layer using the upper electrode structure as an etch mask.

Abstract: In an exemplary process for lower dose rate ion implantation of a work piece, an ion beam may be generated using an ion source and an extraction manipulator. The extraction manipulator may be positioned at a gap distance from an exit aperture of the ion source. A current of the ion beam exiting the extraction manipulator may be maximized when the extraction manipulator is positioned at an optimal gap distance from the exit aperture. The gap distance at which the extraction manipulator is positioned from the exit aperture may differ from the optimal gap distance by at least 10 percent. A first potential may be applied to a first set of electrodes. An x-dimension of the ion beam may increase as the ion beam passes through the first set of electrodes. The work piece may be positioned in the ion beam to implant ions into the work piece.

Abstract: A polymer for resist use is obtainable from a hemiacetal compound having formula (1a) wherein R1 is H, CH3 or CF3, R2 to R4 each are H or a monovalent hydrocarbon group, X1 is a divalent hydrocarbon group, ZZ designates a non-aromatic mono- or polycyclic ring of 4 to 20 carbon atoms having a hemiacetal structure, k1=0 or 1, and k2=0 to 3. A resist composition comprising the polymer displays controlled acid diffusion and low roughness during both positive and negative tone developments.

Abstract: A positive-working lithographic printing plate precursor is disclosed which comprises on a support having a hydrophilic surface or which is provided with a hydrophilic layer a heat and/or light-sensitive coating including an infrared absorbing agent, said heat and/or light-sensitive coating comprising a first layer comprising a binder including a monomeric unit including a sulfonamide group; characterized in that the binder further comprises a monomeric unit including a phosphonic acid group or a salt thereof, and that the monomeric unit comprising the phosphonic acid group is present in an amount comprised between 2 mol % and 15 mol %.

Abstract: A resist pattern formation method including formation of a resist film, exposure, development, and subsequent rinsing using a resist composition containing a high-molecular compound having a constituent unit represented by the formula (a0-1), a constituent unit containing an acid decomposable group whose polarity increases by the action of an acid, and a constituent unit containing a group represented by the formula (a2-r-1). R represents a hydrogen atom, an alkyl group, or a halogenated alkyl group; Ra01 represents a lactone-containing polycyclic group, an —SO2-containing polycyclic group, or a cyano group-containing polycyclic group; Ra?21 represents a hydrogen atom, an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, —COOR?, —OC(?O)R?, a hydroxyalkyl group, or a cyano group; R? represents a hydrogen atom or an alkyl group; and n? represents an integer of from 0 to 2.

Abstract: A chemically amplified negative resist composition is defined as comprising (A) an onium salt having an anion moiety which is a nitrogen-containing carboxylate of fused ring structure, (B) a base resin, and (C) a crosslinker. The resist composition is effective for controlling acid diffusion during the exposure step, exhibits a very high resolution during pattern formation, and forms a pattern with minimal LER.

Abstract: Disclosed herein is a composition comprising a brush polymer; where the brush polymer comprises a reactive moiety that is reacted to a substrate upon which it is disposed; and a block copolymer; where the block copolymer comprises a first block and a second block that are covalently bonded to each other; where the first block comprises a first polymer and a second block comprises a second polymer; where the first polymer comprises less than or equal to 10 atomic percent polysiloxane; where the second polymer comprises at least 15 atomic percent polysiloxane; where the brush polymer is chemically different from the first polymer and the second polymer; and where the first polymer is chemically different from the second polymer; and wherein the block copolymer is disposed upon the brush polymer.

Abstract: A material from which a cured film exhibiting high solvent resistance, liquid crystal-alignment performance, heat resistance and high transparency can be formed. A composition for forming a thermoset film having photo alignment properties, including: a component (A) that is an acrylic copolymer having a photodimerizing moiety and a thermal cross-linking moiety; and a component (B) that is a cross-linking agent.

Abstract: A photoresist composition comprising an acid generator and a resin comprising a structural unit derived from a monomer represented by the formula (1): wherein R1 represents a hydrogen atom etc., R2 represents a hydrogen atom or a C1-C4 alkyl group, A1 represents a single bond etc., and B1 represents a group represented by the formula (1a): wherein R3, R4 and R5 each independently represents a C1-C16 aliphatic hydrocarbon group and R4 and R5 can be bonded each other to form a C3-C18 ring together with the carbon atom to which R4 and R5 are bonded, a C4-C20 saturated cyclic group having a lactone structure or a C5-C20 saturated cyclic hydrocarbon group having at least one hydroxyl group.

Abstract: Provided is an effective process for producing a fluorinated polymer excellent in adhesion, by using a polymerization medium having a low ozone layer destruction potential. The process includes polymerizing a monomer mixture comprising a fluorinated monomer and a polar functional group containing monomer (excluding one having a fluorine atom) in a polymerization medium that contains a medium compound represented by CmH2m+1?xFx—O—CnH2n+1?yFy, m is an integer of from 1 to 6, n is an integer of from 1 to 6, x is from 0 to (2m+1), y is from 0 to 2n, and (x+y) is at least 1), and wherein a solution obtained by dissolving the polar functional group-containing monomer in the polymerization medium is continuously or intermittently added to a polymerization reaction system.

Abstract: A resin comprising: a structural unit represented by formula (I), and a structural unit having an acid-labile group.

Abstract: A heterocyclic compound represented by Formula 1 below, and an organic light-emitting device including the heterocyclic compound:

Abstract: A resist composition comprising a resin adapted to be decomposed under the action of acid to increase its solubility in alkaline developer and a sulfonium or iodonium salt of nitrogen-containing carboxylic acid has a high resolution. By lithography, a pattern with minimal LER can be formed.

Abstract: A resin composition of the present invention includes a polymer compound (A) containing a repeating unit (Q) represented by the following general formula (1): wherein R1 represents a hydrogen atom, a methyl group, or a halogen atom; R2 and R3 represent a hydrogen atom, an alkyl group, or a cycloalkyl group; L represents a divalent linking group or a single bond; Y represents a substituent excluding a methylol group; Z represents a hydrogen atom or a substituent; m represents an integer of 0 to 4; n represents an integer of 1 to 5; and m+n is 5 or less.

Abstract: A display may have an array of organic light-emitting diode display pixels. Each display pixel may have a light-emitting diode that emits light under control of a drive transistor. Each display pixel may also have control transistors for compensating and programming operations. The array of display pixels may have rows and columns. Row lines may be used to apply row control signals to rows of the display pixels. Column lines (data lines) may be used to apply display data and other signals to respective columns of display pixels. A bottom conductive shielding structure may be formed below each drive transistor. The bottom conductive shielding structure may serve to shield the drive transistor from any electric field generated from the adjacent row and column lines. The bottom conductive shielding structure may be electrically floating or coupled to a power supply line.

Abstract: Sulfonic acid derivatives of general formula RCOOCH2CH2CFHCF2SO3-M+ are provided, wherein R represents a substituted or unsubstituted C1-30 linear, branched, or cyclic hydrocarbon group, or a substituted or unsubstituted C6-30 aryl group, and M+ represents a counter cation. Photoacid generators and photoresists containing such sulfonic acid derivatives are also provided.

Abstract: A positive resist composition comprises: (A) a resin of which solubility in an alkali developer increases under an action of an acid; (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (C) a resin having at least one of a fluorine atom and a silicon atom; and (D) a solvent; and a pattern forming method using the positive resist composition.

Abstract: Provided is an actinic-ray- or radiation-sensitive resin composition and a method of forming a pattern using the same, ensuring excellent the etching resistivity and the stability during a post-exposure delay (PED) period. The composition contains a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, and a compound that generates an acid of pKa??1.5 when exposed to actinic rays or radiation.

Abstract: Novel photoacid generator compounds are provided. Photoresist compositions that include the novel photoacid generator compounds are also provided. The invention further provides methods of making and using the photoacid generator compounds and photoresist compositions disclosed herein. The compounds and compositions are useful as photoactive components in chemically amplified resist compositions for various microfabrication applications.

Abstract: A method for producing a resist composition includes at least a step of filtering a solution obtained by dissolving (A) a resin having a monocyclic or polycyclic cycloaliphatic hydrocarbon structure, the resin increasing its solubility in an alkali developer by an action of acid, (B) a compound generating acid upon irradiation with one of an actinic ray and a radiation, and (C) an alkali soluble compound having an alkyl group of 5 or more carbon atoms into (D) a solvent, through a filter.

Abstract: New onium salt compounds and methods for synthesis of such compounds are provided. Preferred methods of the invention include (a) providing an onium salt compound comprising a sulfonate component having an electron withdrawing group; and (b) treating the onium salt compound with a halide salt to form a distinct salt of the onium compound. The present onium compounds are useful as an acid generator component of a photoresist composition.

Abstract: A method of making a semiconductor device is provided. The method includes forming a first material layer that includes a silicon-based component having an alkyl group on a substrate, forming a photoresist layer directly on the material layer, and exposing the photoresist layer to a radiation source.

Abstract: A composite, which is a blend comprising: a nanoparticle comprising a core and a coating surrounding the core; and a polymer, wherein the coating of the nanoparticle comprises a ligand, wherein the ligand is a substituted or unsubstituted C1-C16 carboxylic acid or a salt thereof, a substituted or unsubstituted C1-C16 amino acid or a salt thereof, a substituted or unsubstituted C1-C16 dialkyl phosphonate, or a combination thereof; and wherein the polymer is a polymerization product of a photoacid generator comprising a polymerizable group; at least one unsaturated monomer, which is different from the photoacid generator comprising a polymerizable group; and a chain transfer agent of formula (I); wherein: Z is a y valent C1-20 organic group, x is 0 or 1, and Rd is a substituted or unsubstituted C1-20 alkyl, C3-20 cycloalkyl, C6-20 aryl, or C7-20 aralkyl.

Abstract: New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that can be substantially non-mixable with a resin component of the resist. Further preferred photoresist compositions of the invention comprise 1) Si substitution, 2) fluorine substitution; 3) hyperbranched polymers; and/or 4) polymeric particles. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

Abstract: New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that have base-reactive groups. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

Abstract: A method of forming a resist pattern, including: step A in which a first resist pattern is formed on a substrate, step B in which a basic composition is applied to cover the first resist pattern, step C in which a base contained in the basic composition and the first resist pattern are neutralized to form a developing solution insoluble region on a surface of the first resist pattern, and step D in which the covered first resist pattern is developed, the basic composition containing a basic component, and the basic component containing a polymeric compound having a structural unit (x0) represented by general formula (x0-1) (R is H, C1˜5 alkyl group, C1˜5 halogenated alkyl group; Vx01 is divalent hydrocarbon group having ether bond or amide bond or divalent aromatic hydrocarbon group; Yx01 is single bond or divalent linking group; Rx1 is substituent having nitrogen atom).

Abstract: A composition for forming a resist underlayer film is provided, which contains: a calixarene-based compound obtained from a calixarene by substituting at least a part of hydrogen atoms each on phenolic hydroxyl groups comprised in the calixarene, with a monovalent organic group having 1 to 30 carbon atoms; and an organic solvent. The monovalent organic group preferably includes a crosslinkable group. A part of hydrogen atoms each on phenolic hydroxyl groups of the calixarene-based compound is preferably substituted. The ratio of the number of substituted phenolic hydroxyl groups to the number of unsubstituted phenolic hydroxyl groups in the calixarene-based compound is preferably no less than 30/70 and no greater than 99/1.

Abstract: The present invention is aiming to provide a gas barrier film having excellent gas barrier properties and also having superior transparency and the like, and an efficient method for producing such a gas barrier film. The present invention provides a gas barrier film having a gas barrier layer on a base material, and a method for producing such a gas barrier film, in which the gas barrier layer includes, from the surface side toward the base material side, a first region and a second region having different refractive indices, the value of the refractive index in the first region is adjusted to a value within the range of 1.50 to 1.68, and the value of the refractive index in the second region is adjusted to a value within the range of 1.40 to below 1.50.

Abstract: A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, and which includes a base component (A) which exhibits changed solubility in a developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the acid-generator component (B) including a compound (B0-1) represented by general formula (b0) shown below (in the formula, Yx01 represents a divalent linking group; n represents an integer of 1 to 3; and M?m+ represents an organic cation having a valency of m.

Abstract: Disclosed is a polymerizable fluoromonomer represented by the following general formula (1). In the formula, R1 represents a hydrogen atom, methyl group, fluorine atom, or trifluoromethyl group. n is an integer of 0 or 1, and m is that of from 1 to (3+n). R2 and R3 each independently represents a hydrogen atom or a protective group. A resist containing a fluoropolymer obtained by polymerizing or copolymerizing the monomer is suitable for use in microfabrication by immersion exposure or by a double patterning process based on immersion exposure.

Abstract: Methods and materials for preparing a covalent 3D nano-object are provided. A diamine or triamine monomer and a monoamine terminated precursor may be reacted to form a star polymer material. A cross-linking polymerization process may in a nanogel core with the monoamine terminated precursor covalently linked to the nanogel core. The covalent 3D nano-object may comprise HT, PHT, HA, and/or PHA materials.

Abstract: Disclosed is a polymerizable fluoromonomer represented by the following general formula (1). In the formula, R1 represents a hydrogen atom, methyl group, fluorine atom, or trifluoromethyl group. n is an integer of 0 or 1, and m is that of from 1 to (3+n). R2 and R3 each independently represents a hydrogen atom or a protective group. A resist containing a fluoropolymer obtained by polymerizing or copolymerizing the monomer is suitable for use in microfabrication by immersion exposure or by a double patterning process based on immersion exposure.

Abstract: Methods and materials for making a semiconductor device are described. The method includes providing a substrate, forming a middle layer comprising a floating additive polymer (FAP) at an upper surface of the middle layer, the FAP chemically bound to a photoacid generator (PAG) and including a fluorine-containing material over the substrate, forming a photoresist layer over the middle layer, exposing the photoresist layer and the middle layer to an exposure energy to produce acid bound to the middle layer in the exposed areas of the middle layer, and developing the photoresist layer.

Abstract: A display may have an array of organic light-emitting diode display pixels. Each display pixel may have a light-emitting diode that emits light under control of a drive transistor. Each display pixel may also have control transistors for compensating and programming operations. The array of display pixels may have rows and columns. Row lines may be used to apply row control signals to rows of the display pixels. Column lines (data lines) may be used to apply display data and other signals to respective columns of display pixels. A bottom conductive shielding structure may be formed below each drive transistor. The bottom conductive shielding structure may serve to shield the drive transistor from any electric field generated from the adjacent row and column lines. The bottom conductive shielding structure may be electrically floating or coupled to a power supply line.

Abstract: A resist composition which generates an acid upon exposure and whose solubility in a developing solution changes under the action of an acid. The composition includes a base material component whose solubility in a developing solution changes under the action of an acid; an acid generator component which generates an acid upon exposure; and a photo-reactive quencher which contains a compound represented by the general formula shown below: in which Ra1 represents an alkyl group having 1 to 10 carbon atoms which may have a substituent; and Ra2 and Ra3 each independently represent an alkyl group having 1 to 10 carbon atoms which may have a substituent. X? represents a counter anion.

Abstract: A resist composition contains; (A1) a resin having a structural unit represented by the formula (aa) and at least one structural unit selected from the group consisting of a structural unit represented by the formula (a1-1) and a structural unit represented by the formula (a1-2); (A2) a resin which does not have the structural unit represented by the formula (aa) and which is insoluble or poorly soluble in aqueous alkali solution, but becomes soluble in aqueous alkali solution by the action of acid; and (B) an acid generator, wherein Raa1, Aaa1, Raa2, La1, La2, Ra4, Ra5, Ra6, Ra7, m1, n1 and n1? are defined in the specification.

Abstract: A layered structure includes a substrate; an underlayer including a reversibly crosslinked polymer and/or oligomer interconnected by ester functionalities; a silicon-containing mask overlaying the underlayer; and a photoresist overlaying the silicon-containing hardmask layer. Also described are multilayer lithographic processes and processes of forming the underlayer, which generally includes coating an underlayer composition onto a surface of the substrate at a thickness effective to provide a planar upper surface, wherein the underlayer composition includes a polymer including terminal alcohol groups, a multifunctional anhydride, and a solvent. The underlayer composition is heated to a temperature to effect a crosslinking reaction between the multifunctional anhydride and the terminal alcohol groups to form the ester functionalities, which can be selectively removed (reversibly crosslinked) using a wet etchant.

Abstract: The present invention provides a polymer compound for a conductive polymer, containing one or more repeating units (a) represented by the following general formula (1), the polymer compound for a conductive polymer being synthesized by ion-exchange of a lithium salt, a sodium salt, a potassium salt, or a nitrogen compound salt of a sulfonic acid residue, and having a weight average molecular weight in the range of 1,000 to 500,000. There can be provided a polymer compound for a conductive polymer having a specific superacidic sulfo group which is soluble in an organic solvent, and suitably used for a fuel cell or a dopant for a conductive material.

Abstract: Photosensitive materials and method of forming a pattern that include providing a composition of a component of a photosensitive material that is operable to float to a top region of a layer formed from the photosensitive material. In an example, a photosensitive layer includes a first component having a fluorine atom (e.g., alkyl fluoride group). After forming the photosensitive layer, the first component floats to a top surface of the photosensitive layer. Thereafter, the photosensitive layer is patterned.

Abstract: Sulfonium and iodonium salts of a carboxylate having an aromatic ring to which a nitrogen-containing alkyl or cyclic structure is attached are novel. The onium salt functions as an acid diffusion controlling agent in a resist composition, enabling to form a pattern of good profile with high resolution, improved MEF, LWR and DOF.

Abstract: A liquid crystal display includes: a signal controller configured to receive an input image signal corresponding to a gray from the outside, and an image signal corrector configured to correct the input image signal. The image signal corrector is configured to shift a first input image signal value corresponding to a black gray by a first value based on a common voltage, is configured to shift a second input image signal value corresponding to a halftone gray by a second value based on the common voltage, and is configured to shift a third input image signal value corresponding to a white gray by a third value based on the common voltage. The first value and the second value are larger than a kickback voltage of each of the black gray and the halftone gray, and the third value is the same as a kickback voltage of the white gray.

Abstract: A curable composition comprising a silicone, a halomethyl-1,3,5-triazine and optionally a silicate tackifier is disclosed. The compositions are useful in the preparation of pressure-sensitive adhesives and release coatings.

Abstract: A wound dressing and a method of making the wound dressing is described herein. The wound dressing is formed of an absorbent substrate formed of one or more layers and a low-adherence layer disposed on the substrate. The low-adherence layer can be disposed within at least a portion of the substrate. The low-adherence layer is formed of a mixture of at least one highly fluorinated polymer and at least one acidic polymer. The at least one highly fluorinated polymer has a fluorine content greater than the fluorine content of the at least one acidic polymer.