Abstract: A method of forming a pattern comprises diffusing an acid, generated by irradiating a portion of a photosensitive layer, into an underlayer comprising an acid sensitive copolymer comprising an acid decomposable group and an attachment group, to form an interpolymer crosslink and/or covalently bonded to the surface of the substrate. Diffusing comprises heating the underlayer and photosensitive layer. The acid sensitive group reacts with the diffused acid to form a polar region at the surface, in the shape of the pattern. The photosensitive layer is removed to forming a self-assembling layer comprising a block copolymer having a block with an affinity for the polar region, and a block having less affinity than the first. The first block forms a domain aligned to the polar region, and the second block forms a domain aligned to the first. Removing either the first or second domain exposes a portion of the underlayer.

Abstract: The present disclosure relates to methods and structures that involve the use of directed self-assembly to selectively remove at least one fin or fin section from a pattern of parallel fins in a semiconductor structure.

Abstract: An integrated circuit with a SAR SRAM cell with power routed in metal-1. An integrated circuit with a SAR SRAM cell that has power routed in Metal-1 and has metal-1 and metal-2 integrated circuit and SAR SRAM cell patterns which are DPT compatible. A process of forming an integrated circuit with a SAR SRAM cell with DPT compatible integrated circuit and SAR SRAM cell metal-1 and metal-2 patterns.

Abstract: Acid generators comprising a carbocyclic or heteroaromatic group substituted with at least one diester moiety are provided. These acid generators are particularly useful as a photoresist composition component.

Abstract: A photoresist composition comprising a resin having an acid-labile group and no fluorine atom, a resin having a fluorine atom, and a salt represented by formula (I):

Abstract: A film is described comprising a (meth)acrylic polymer and a polyvinyl acetal (e.g. butyral) resin. In some embodiments, the film has a glass transition temperature (i.e. Tg) ranging from 30° C. to 60° C. In some embodiments, the film has a gel content of at least 20% or greater. In some embodiments, the film has an elongation at break of at least 175%. The film typically comprises photoinitiator as a result of the method by which the film was made. The film may be a monolithic film or a layer of a multilayer film.

Abstract: A resist composition comprising a base resin comprising recurring units having an acid labile group and recurring units containing a rubidium or cesium salt of ?-fluorinated sulfonic acid exhibits a high sensitivity and forms a pattern of satisfactory profile with minimal LWR after exposure and development.

Abstract: A polyimide-based resin film cleaning liquid includes at least one solvent selected from the group consisting of a hydroxy aliphatic carboxylic acid ester, an aliphatic carboxylic acid ester, a chain or cyclic ketone, an alkylene glycol monoalkyl ether, an alkylene glycol monoalkyl ether acetate, and an aprotic polar solvent other than these solvents.

Abstract: An integrated circuit manufacturing method includes forming mandrel patterns over a patterning layer of a substrate; and forming a spacer layer over the patterning layer, over the mandrel patterns, and onto sidewalls of the mandrel patterns. The method further includes trimming the spacer layer using a dry etching technique such that a space between adjacent sidewalls of the spacer layer substantially matches a dimension of the mandrel patterns along a pattern width direction. The method further includes etching the spacer layer to expose the mandrel patterns and the patterning layer, resulting in a patterned spacer layer on the sidewalls of the mandrel patterns. After the trimming of the spacer layer and the etching of the spacer layer, the method further includes removing the mandrel patterns. The method further includes transferring a pattern of the patterned spacer layer to the patterning layer.

Abstract: A laser markable material includes a laser markable layer, present as a self-supporting layer or as a layer on a support, the laser markable layer including an infrared absorbing dye and an infrared absorbing pigment, characterized in that the amount of the infrared absorbing pigment is between 10 ppm and 1000 ppm relative to the total dry weight of the laser markable layer.

Abstract: Ink-jet printable compositions including nanoparticles capped with a protective layer of hydrocarbon chains and a single solvent exhibiting a single evaporation rate and having a specifically defined viscosity and surface tension that result in uniform and printable alignment layers for liquid crystal materials. Patterned liquid crystal-containing cells are also disclosed including one or more layers including the same or different nanoparticles capped with a protective layer of hydrocarbon chains printed on a surface of a substrate or even another nanoparticle-containing layer. Methods for producing the cells are also disclosed, including the step of printing a pattern on one or more portions of a cell surface utilizing a composition comprising the capped nanoparticles. Devices including the cells are also disclosed.

Abstract: There is provided a new coating liquid for resist pattern coating.

Abstract: A resist composition comprising a polymer comprising recurring units of lactone and a PAG is provided. The resist composition has a high dissolution contrast during organic solvent development, and improved resist properties including MEF and CDU and forms a fine hole pattern with improved roundness and size control.

Abstract: Provided are a photosensitive resin composition from which a cured product having a thin film thickness, excellent light-shielding properties, and a high surface hardness is obtained; as well as a cured product obtained by curing the photosensitive resin composition, a cured film and a method for producing the same, a method for producing a resin pattern, and a liquid crystal display device, an organic EL display device, an infrared cut filter, or a solid-state imaging device, each having the cured film. The photosensitive resin composition of the present invention includes (Component A) a polymer having a constitutional unit containing a group in which an acid group is protected by an acid-decomposable group; (Component B) a photoacid generator; (Component C) a solvent; (Component D) a compound having a crosslinkable group and a molecular weight in the range of 100 to 2,000; and (Component S) titanium black.

Abstract: The present invention provides a polymer compound for a conductive polymer comprising one or more repeating units “a” shown by the formula (1), and having a weight-average molecular weight in the range of 1,000 to 500,000. There can be provided a polymer compound for a conductive polymer having a specific superacidic sulfo group which is soluble in an organic solvent, and suitably used for a fuel cell or a dopant for a conductive material. wherein R1 represents a hydrogen atom or a methyl group; R2 represents any of a single bond, an ester group, and a linear, branched, or cyclic hydrocarbon group having 1 to 12 carbon atoms, the hydrocarbon group optionally containing an ether group, an ester group, or both; “Z” represents any of a single bond, a phenylene group, a naphthylene group, an ether group, and an ester group; and “a” is a number satisfying 0<a?1.0.

Abstract: A resist composition comprising a base polymer and a sulfonium salt of amino-containing carboxylic acid offers dimensional stability on PPD and a satisfactory resolution.

Abstract: A film-attached solid electrolyte membrane includes: a film having a surface that has a contact angle with respect to acetonitrile in a range from 35 to 75 degrees and a contact angle with respect to chloroform in a range from 15 to 40 degrees; and a solid electrolyte membrane in contact with the surface of the film. A manufacturing method of a film-attached solid electrolyte membrane includes: coating a solid-electrolyte-membrane-forming composition on a surface of a film that has a contact angle with respect to acetonitrile in a range from 35 to 75 degrees and a contact angle with respect to chloroform in a range from 15 to 40 degrees; and curing the coated solid-electrolyte-membrane-forming composition to form a solid electrolyte membrane.

Abstract: A negative resist composition comprising (A) a sulfonium compound of betaine type and (B) a polymer is provided. The resist composition is effective for controlling acid diffusion during the exposure step, exhibits a very high resolution during pattern formation, and forms a pattern with minimal LER.

Abstract: Provided are a pattern forming method capable of providing good DOF and LER, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method. The pattern forming method includes a step a of coating an active-light-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, a step b of coating a composition for forming an upper layer film onto the resist film, followed by carrying out heating to 100° C. or higher, to form the upper layer film on the resist film, a step c of exposing the resist film having the upper layer film formed thereon, and a step d of developing the exposed resist film using a developer including an organic solvent to form a pattern.

Abstract: A photoresist polymer is synthesized from a repeating unit that comprises a first leaving group including an ester group, and a second leaving group capable of being removed together with the first leaving group.

Abstract: A method of semiconductor device fabrication that includes sequentially forming an interfacial conductive layer and an etch stop layer on a resistive memory layer; forming a main conductive layer on the etch stop layer; exposing a portion of the etch stop layer by patterning the main conductive layer; exposing a portion of the interfacial conductive layer by patterning the portion of the etch stop layer; forming an upper electrode structure by patterning the portion of the interfacial conductive layer; cleaning a surface of the upper electrode structure and an exposed surface of the resistive memory layer; and patterning the resistive memory layer using the upper electrode structure as an etch mask.

Abstract: A method of forming a structure containing a phase-separated structure, the method including applying a block copolymer composition including an organic solvent component (S) and a block copolymer in which a block of polystyrene or a polystyrene derivative is bonded to at least one kind of block to a substrate to form a layer containing the block copolymer; and phase-separating the layer containing the block. The value of an interaction distance RaPS(MPa1/2) between the Hansen solubility parameter of the organic solvent component (S) and the Hansen solubility parameter of polystyrene or the polystyrene derivative satisfying the following formula (1). 4.

Abstract: A method for manufacturing a polymer compound which has a constituent unit (a10) which includes a hydroxy group and a constituent unit (a1) which includes an acid decomposable group of which a polarity increases due to an effect of an acid, the method including copolymerizing a monomer for deriving a constituent unit (a0) which includes a group which protects a phenolic hydroxyl group or a hydroxy group of a carboxy group with an organic silicon compound and a monomer for deriving the constituent unit (a1) and obtaining a prepolymer which has the constituent unit (a0) and the constituent unit (a1), and selectively deprotecting the constituent unit (a0) by reacting a compound which has a fluoride anion with the prepolymer and obtaining a polymer compound which has the constituent unit (a10) and the constituent unit (a1).

Abstract: A compound capable of providing a composition having high storage stability without reacting with a base-reactive compound, even when stored in a mixed state with the base-reactive compound, as well as capable of generating a strong base by irradiation of light (active energy rays) or heating. A base generator comprises the compound and a base-reactive composition comprises the base generator and the base-reactive compound. The compound is represented by the general formula (A).

Abstract: A resist composition comprising a 2,5,8,9-teraaza-1-phosphabicyclo[3.3.3]undocane, biguanide or phosphazene salt of an iodinated aromatic group-containing carboxylic acid exhibits a sensitizing effect and an acid diffusion suppressing effect and forms a pattern having improved resolution, LWR and CDU.

Abstract: A resist composition contains: a resin having an acid-labile group, a resin having a structural unit represented by formula (I), an acid generator, and a solvent; wherein Ri41 represents a hydrogen atom or a methyl group, Ri42 represents a C1 to C10 hydrocarbon group that may be substituted with a hydroxy group, a C2 to C7 acyl group or a hydrogen atom, Ri43 in each occurrence independently represents a C1 to C6 alkyl group or a C1 to C6 alkoxy group, “p” represents an integer of 0 to 4, Z represents a divalent C3 to C20 hydrocarbon group having a group represented by formula (Ia), and a methylene group contained in the hydrocarbon group may be replaced by an oxygen atom, a sulfur atom or a carbonyl group, *—[(CH2)w—O]r— (Ia): wherein “w” and “r” each independently represents an integer of 1 to 10, and * represent a bonding position.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a bottom layer over a substrate and forming a middle layer over the bottom layer. The middle layer includes a carbon backbone and a first side chain bonded to the carbon backbone, and the first side chain has a hydrophilic group. The method includes forming a top layer over the middle layer and patterning the top layer to form a patterned top layer. The method includes patterning the middle layer by using the patterned top layer as a mask to form a patterned middle layer. The method includes patterning the bottom layer to form a patterned bottom layer. The method also includes removing the patterned middle layer by a base solution, and the middle layer is soluble in the base solution by the hydrophilic group.

Abstract: The present disclosure relates to novel multiple trigger negative working photoresist compositions and processes. The processes involve removing acid-labile protecting groups from crosslinking functionalities in a first step and crosslinking the crosslinking functionality with an acid sensitive crosslinker in a second step. The incorporation of a multiple trigger pathway in the resist catalytic chain increases the chemical gradient in areas receiving a low dose of irradiation, effectively acting as a built in dose depend quencher-analog and thus enhancing chemical gradient and thus resolution, resolution blur and exposure latitude. The photoresist compositions and the methods are ideal for fine pattern processing using, for example, ultraviolet radiation, beyond extreme ultraviolet radiation, extreme ultraviolet radiation, X-rays and charged particle rays.

Abstract: Shrinkage and mass losses are reduced in photoresist exposure and post exposure baking by utilizing a small group which will decompose. Alternatively a bulky group which will not decompose or a combination of the small group which will decompose along with the bulky group which will not decompose can be utilized. Additionally, polar functional groups may be utilized in order to reduce the diffusion of reactants through the photoresist.

Abstract: A photoacid-generating compound has the structure wherein m, n, R1, R2, X, Y, and Z? are defined herein. The photoacid-generating compound exhibits strong absorption and chemical sensitivity to extreme ultraviolet radiation, while also absorbing longer wavelengths with desirably reduced chemical sensitivity. Also described are a polymer incorporating the residue of a polymerizable version of the photoacid-generating compound, a photoresist composition that includes the photoacid-generating compound, the polymer, or a combination thereof, and a method of forming a photoresist relief image using the photoresist composition.

Abstract: There is disclosed a method for manufacturing an organic processing fluid for patterning of a chemical amplification type resist film, comprising a step of causing a fluid containing an organic solvent to pass through a filtration device having a fluid input portion, a fluid output portion, and a filtration filter film provided in a flow path that connects the fluid input portion and the fluid output portion with each other, wherein an absolute value (|TI?To|) of a difference between a temperature (TI) of the fluid in the fluid input portion and a temperature (To) of the fluid in the fluid output portion is 3° C. or lower, a filtration speed of the fluid in the filtration device is 0.5 L/min/m2 or greater, and a filtration pressure by the fluid in the filtration device is 0.10 MPa or lower.

Abstract: An acid diffusion control agent includes a compound represented by a formula (1), a compound represented by a formula (2) or both thereof. R1 represents a hydrocarbon group comprising a monovalent alicyclic structure, or the like. R2 and R3 each independently represent a monovalent hydrocarbon group, or the like. R4 and R5 each independently represent a monovalent hydrocarbon group, or the like. R6 and R7 each independently represent a monovalent hydrocarbon group, or the like. R8 represents a monocyclic heterocyclic group together with the ester group and with the carbon atom. n is an integer of 1 to 6. R9 represents a monovalent hydrocarbon group, or the like. R10 represents a monovalent hydrocarbon group having 1 to 10 carbon atoms. R11 and R12 each independently represent a monovalent hydrocarbon group, or the like. R13 and R14 each independently represent a monovalent hydrocarbon group, or the like.

Abstract: The present disclosure provide a method for preparing a semiconductor structure. The semiconductor structure includes a substrate having a memory array region and a peripheral circuit region; a plurality of first line patterns positioned in the memory array region and extending along a first direction; a plurality of second line patterns positioned over the first line patterns in the memory array region; and a plurality of linear features positioned in the peripheral circuit region. The plurality of second line patterns extend along a second direction different from the first direction. The plurality of second line patterns and the plurality of linear features are positioned at substantially the same level in the substrate.

Abstract: An anti-reflective coating (ARC) composition for use in lithography patterning and a method of using the same is disclosed. In an embodiment, the ARC composition comprises a polymer having a chromophore; an acid labile group (ALG), more than 5% by weight; a thermal acid generator; and an optional crosslinker. The method includes applying the ARC composition over a substrate; crosslinking the polymer to form an ARC layer; cleaving the ALG of the ARC layer to reduce a film density of the ARC layer; forming a resist layer over the ARC layer, patterning the resist layer, and etching the ARC layer. Due to reduced film density, the ARC layer has a high etching rate, thereby preserving the critical dimension (CD) of the resist pattern during the etching process.

Abstract: An object of the present invention is to provide a novel fluorine-containing polymer, a radiation-sensitive resin composition for liquid immersion lithography which contains the fluorine-containing polymer, which leads to a pattern having an excellent shape and excellent depth of focus, wherein the amount of an eluted component in a liquid for liquid immersion lithography such as water that comes in contact with the resist during exposure in liquid immersion lithography is little, and which provides a larger receding contact angle between the resist film and the liquid for liquid immersion lithography such as water, and a method for purifying the fluorine-containing polymer. The present resin composition comprises a novel fluorine-containing polymer (A) containing repeating units represented by the general formulae (1) and (2) and having Mw of 1,000-50,000, a resin (B) having an acid-unstable group, a radiation-sensitive acid generator (C), a nitrogen-containing compound (D) and a solvent (E).

Abstract: A resist composition comprising a base resin comprising acid labile group-containing recurring units and preferably acid generator-containing recurring units, and a sodium, magnesium, potassium, calcium, rubidium, strontium, yttrium, cesium, barium or cerium salt of ?-fluorinated sulfonic acid bonded to an alkyl, alkenyl, alkynyl or aryl group exhibits a high resolution and sensitivity and forms a pattern of satisfactory profile with minimal LWR after exposure and development.

Abstract: A pattern-forming method comprises: forming a resist underlayer film on an upper face side of a substrate; forming a silicon-containing film on an upper face side of the resist underlayer film; and removing at least a part of the resist underlayer film and at least a part of the silicon-containing film with a basic aqueous solution. Preferably, the pattern-forming method further comprises, after the forming of the silicon-containing film and before the removing of the resist underlayer film and the silicon-containing film, forming a resist pattern on an upper face side of the silicon-containing film, and etching the silicon-containing film using the resist pattern as a mask.

Abstract: A compound which is non-ionic compound, the compound has a group represented by formula (Ia): wherein R2 represents a group having a C3 to C18 alicyclic hydrocarbon group where a methylene group may be replaced by an oxygen atom or a carbonyl group, Rf1 and Rf2 each independently represent a C1 to C4 perfluoroalkyl group, and * represents a binding site.

Abstract: Provided are polymeric nitrones comprising polymerized units of (a) acrylates of Formula I: wherein R1 and R2 are as defined herein; and (b) nitrone-pendant esters of Formula II: wherein R3 and R4 are as defined herein, and Z is a nitrone substituent of Formula III: wherein R5, R6, R7, R8, R9, R10, R11, R12, R13, and R14 are as defined herein, and wherein the sum of m+n is a number from 10 to 50, and the ratio of m to n is from 1:1 to 20:1.

Abstract: A photosensitive resin composition for dry etching including a water-soluble resin, a photopolymerizable monomer, and a photopolymerization initiator, and a method for producing a resist pattern for dry etching. The method includes forming a resin layer with the photosensitive resin composition on a substrate; exposing the resin layer with positional selectivity; and developing the exposed resin layer with water at a temperature less than 50° C., so as to form a resist pattern.

Abstract: The present invention relates to an acrylic processing aid which may enhance the processability and dispersibility of a resin, a method of producing the same, a vinyl chloride-based resin composition including the same, and a vinyl chloride-based resin formed product derived from the vinyl chloride-based resin composition. An acrylic processing aid according to the present invention may be used as a processing aid for a resin (e.g., a vinyl chloride-based resin) to promote gelation of the resin to enhance the processability, thus suppressing generation of fish-eye, and in a forming processing (e.g., a calendar forming), may promote melting of the resin to suppress the generation of air marks and flow marks, thereby enhancing the surface characteristics of the produced resin.

Abstract: An aspect of the present invention provides a monomer from which a polymer layer capable of keeping high display quality even in high temperature and high humidity environments can be formed. The monomer in an aspect of the present invention is a compound represented by P-Sp1-Z2-A1-(Z1-A2)n1-Z3-Sp2-P: in the formula, P denotes the same or different radical polymerizable group; and at least one of Z1, Z2, and Z3 denotes —NRCO— or —CONR— group.

Abstract: Provided are: a transparent polyimide copolymer which satisfies solvent solubility, storage stability, heat resistance, mechanical strength and thermal yellowing resistance at high levels and has excellent utility; a polyimide resin composition; a molded article; and a production method of the copolymer. The transparent polyimide copolymer is obtained by copolymerizing: (A) 4,4?-oxydiphthalic dianhydride and/or 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride; and (B) at least one diamine and/or diisocyanate represented by the following Formulae (1) to (3): (wherein, X represents an amino group or an isocyanate group; R1 to R8 each independently represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, an alkenyl group having 2 to 4 carbon atoms or an alkoxy group having 1 to 4 carbon atoms; and at least one of the R1 to R8 is not a hydrogen atom).

Abstract: Provided is a method for manufacturing a conductive pattern forming member that is formed on a substrate and that has excellent resistance to ion migration between a conductive pattern and a photosensitive resin layer, while suppressing generation of residues in the dissolution and removal of unexposed portions.

Abstract: A salt having a group represented by the formula (aa): wherein Xa and Xb independently each represent an oxygen atom or a sulfur atom, the ring W represents a C3-C36 heterocyclic ring which has an ester bond or a thioester bond, said heterocyclic ring optionally further having an oxygen atom, a sulfur atom, a carbonyl group or a sulfonyl group each by which a methylene group has been replaced, and said heterocyclic ring optionally having a hydroxyl group, a cyano group, a carboxyl group, a C1-C12 alkyl group, a C1-C12 alkoxy group, a C2-C13 alkoxycarbonyl group, a C2-C13 acyl group, a C2-C13 acyloxy group, a C3-C12 alicyclic hydrocarbon group, a C6-C10 aromatic hydrocarbon group or any combination of these groups each by which a hydrogen atom has been replaced, and * represents a binding position.

Abstract: By a lithographic printing plate precursor including a support having provided thereon an image-recording layer capable of forming an image by supplying at least any of printing ink and dampening water on a printing machine after image exposure to remove an unexposed area thereof, wherein the image-recording layer contains an infrared absorbing agent, a polymerization initiator, a polymerizable compound and a polysaccharide having a sulfonic acid group or a group made by a salt thereof and a plate making method of a lithographic printing plate using the same, a lithographic printing plate precursor which exhibits good development property while maintaining printing durability of a lithographic printing plate after development and a plate making method of a lithographic printing plate using the same can be provided.

Abstract: A method for specifying and fabricating non-homogeneous, anisotropic, truly functionally graded objects. The objects may have defined spatial heterogeneity (e.g., a gradient in material concentration) with local randomized distributions. This local randomness is designed in such a way that global averaging results in the specified spatial heterogeneity. The fabrication of structures is an additive process in which a material is deposited in defined patterns.

Abstract: There is provided a mask blank including on a substrate: a thin film for forming a transfer pattern; a resist underlayer formed on the thin film and made of a resist underlayer composition containing a polymer having a unit structure having a lactone ring and a unit structure having a hydroxyl group; a resist film formed on the resist underlayer film and made of a resist composition; and a mixed film formed so as to be interposed between the resist underlayer film and the resist film and made of a mixed component containing the resist underlayer composition and the resist composition.

Abstract: A photoresist includes a group which will decompose that is attached to a hydrocarbon backbone at multiple points along the hydrocarbon chain. With such an attachment, the group which will decompose will cleave from one point in order to generate a desired shift in polarity while still remaining bonded to the hydrocarbon backbone. This prevents the group which will decompose from leaving the photoresist, thereby reducing or eliminating volume losses associated with exposure and post-exposure baking.

Abstract: A pattern-forming method comprises: forming a resist underlayer film on an upper face side of a substrate; forming a silicon-containing film on an upper face side of the resist underlayer film; and removing at least a part of the resist underlayer film and at least a part of the silicon-containing film with a basic aqueous solution. Preferably, the pattern-forming method further comprises, after the forming of the silicon-containing film and before the removing of the resist underlayer film and the silicon-containing film, forming a resist pattern on an upper face side of the silicon-containing film, and etching the silicon-containing film using the resist pattern as a mask.