Abstract: A polymer comprising recurring units containing a specific lactone ring and having an alkyl group on ?-butyrolactone skeleton of fused ring lactone and an alkyl ester substituent group intervening between the lactone structure and the polymer backbone is provided. A resist composition comprising the polymer as base resin is improved in such properties as DOF margin and MEF and quite effective for precise micropatterning.

Abstract: The material for forming a film for lithography according to the present invention contains a compound represented by the following formula (1): wherein, each R0 independently represents a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group or a halogen atom, and each p is independently an integer of 0 to 4.

Abstract: The present application relates to a block copolymer and uses thereof. The present application can provide a block copolymer—which exhibits an excellent self-assembling property and thus can be used effectively in a variety of applications—and uses thereof.

Abstract: A method for forming a film for the fabrication of a microelectronic or optoelectronic device comprising a series of diazirine compounds of formula (I) having utility as photocrosslinkers are disclosed. Where, A, L, z, Arx and Ry are as defined herein.

Abstract: A resist composition comprising a 2,5,8,9-tetraaza-1-phosphabicyclo[3.3.3]undecane, biguanide or phosphazene salt of tetraiodophenolphthalein, tetraiodophenolsulfonphthalein or tetraiodofluorescein exhibits a sensitizing effect and an acid diffusion suppressing effect and forms a pattern having improved resolution, LWR and CDU.

Abstract: The present invention relates to the use of a mono-azide compound for cross-linking polymer strands, wherein said mono-azide compound has a structure of the formula (I): (I), wherein Q1 and Q2 are each independently from another a halogen and wherein R1, R2 and R3 are each independently from another any not comprising an azido moiety. Further, the present invention relates to a method for cross-linking polymer stands and to a cross-linked polymer composition obtainable from said method and an electronic device comprising such composition.

Abstract: A resist composition which generates an acid upon exposure and whose solubility on a developing solution changes under the action of the acid, including a polymer compound having units represented by formulas (a0-1), (a0-2), and (a0-3) in an amount of 0 to 10 mol %. In the formulas, R is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms, Va01 and Va03 are a divalent hydrocarbon group, na01 and na03 each are an integer of 0 to 2, Ra0? is a specific acid dissociable group, Va02 is a divalent linking group containing a hetero atom or a single bond, Ra07 is a monovalent organic group, na021 is an integer of 0 to 3, and na022 is an integer of 1 to 3.

Abstract: A conductive polymer composition including: (A) ?-conjugated conductive polymer having at least one repeating unit shown by the following general formulae (1-1), (1-2), and (1-3); (B) a dopant polymer which contains a repeating unit “a” shown by the following general formula (2) and has a weight-average molecular weight in a range of 1,000 to 500,000; and (C) an amphoteric ion compound shown by the following general formula (3). This provides a conductive polymer composition having good filterability, coating property and film-formability onto a substrate to form a conductive film with good film quality and peelability with H2O or an alkaline developer; and forming a conductive film which reveals antistatic performance with high charge discharging ability and does not affect an influence of acid on the adjoined layer to be contact with.

Abstract: Disclosed and claimed herein is a composition for forming a spin-on hard-mask, having a fullerene derivative and a crosslinking agent. Further disclosed is a process for forming a hard-mask.

Abstract: An electron beam resist underlayer film-forming composition includes a polymer containing a unit structure having a lactone ring and a unit structure having a hydroxy group. The polymer may be a polymer obtained by copolymerizing a monomer mixture containing a lactone (meth)acrylate, a hydroxyalkyl (meth)acrylate, and phenyl (meth)acrylate or benzyl (meth)acrylate. A method for producing a semiconductor device including: applying the electron beam resist underlayer film-forming composition onto a substrate and heating the applied composition to form an electron beam resist underlayer film; coating the electron beam resist underlayer film with an electron beam resist; irradiating the substrate coated with the electron beam resist underlayer film and the electron beam resist with an electron beam; developing the substrate; and transferring an image onto the substrate by dry etching to form an integrated circuit element.

Abstract: A photosensitive composition is disclosed including a fluorinated photo cross-linkable polymer provided in a fluorinated solvent such as a hydrofluoroether. The photo cross-linkable polymer includes a first repeating unit having a fluorine-containing group but not a cinnamate group, and a second repeating unit having a fluorine-containing cinnamate group. The polymer has a total fluorine content in a range of 30 to 60% by weight. The composition can be used to form patterned barrier or dielectric structures over substrates and devices such as organic electronic devices.

Abstract: A resist composition comprising an alkali metal salt of tetraiodophenolphthalein, tetraiodophenolsulfonphthalein or tetraiodofluorescein exhibits a sensitizing effect and an acid diffusion suppressing effect and forms a pattern having improved resolution, LWR and CDU.

Abstract: An object of the present invention is to obtain a high removing performance of particles. The substrate processing system according to the exemplary embodiment includes a holding unit and a removing solution supply unit. The holding unit holds a substrate that has a treatment film formed thereon, the treatment film includes an organic solvent and a fluorine-containing polymer that is soluble in the organic solvent. The removing solution supply unit supplies to the treatment film formed on the substrate, a removing solution capable of removing the treatment film.

Abstract: A laminate member is provided which has excellent ion migration resistance between a light-sensitive resin layer and a conductive layer formed on a substrate. This laminate member is provided with a resin layer A formed on the substrate, a transparent electrode layer B formed on the resin layer A, and a conductive layer C formed on the resin layer A and the transparent electrode layer B, wherein the resin layer A contains a resin (a) containing a carboxyl group, the conductive layer C contains a resin (c) having conductive particles and a carboxylic group, the conductive layer C contacts the resin layer A and the transparent electrode layer B, and, defining SA as the acid value of an organic component contained by the resin layer A and SC the acid value of an organic component contained by the resin layer C, the value of SA?SC is 20-150 mg KOH/g.

Abstract: Acid generator compounds are provided that are particularly useful as a photoresist composition component. In one preferred aspect, cyclic sulfonium salt and photoresist compositions that comprise such compounds are provided. In another preferred aspect, acid generator compounds are provided that comprise one or more covalently linked acid-labile moieties, particularly ester-containing acid-labile moieties.

Abstract: The invention describes novel coating agents that include a polymer, one or more latent reactive groups and one or more noncovalent linking groups, the noncovalent linking groups selected to interact with a substrate to which the coating agent is applied. The coating agents are useful for providing a coating that can be further functionalized (for example, by application of additional coating layers), or for providing desirable properties to a surface.

Abstract: [Object] To provide compositions for forming a top coat layer capable of forming patterns with an excellent roughness and pattern shape in a pattern formation method by exposure to extreme ultraviolet rays, and a pattern formation method using the composition. [Means for solving problem] Provided are compositions for forming a top coat layer comprises an aromatic compound having an aromatic hydroxyl group and an aqueous solvent; and a method of forming patterns by applying the composition onto the resist surface and subjecting the resultant to exposure and development. This composition can further comprise binders.

Abstract: A spectrum of light which is emitted from an illuminator (2) of a liquid crystal display device (100) has a peak in each of the wavelength ranges of 447 to 453 nm, 538 to 542 nm, 613 to 617 nm, 628 to 632 nm, and 648 to 652 nm. The peak wavelength and rising wavelength of the transmission spectrum of the red color filters are, respectively, not less than 600 nm; and not less than 568 nm and not more than 572 nm. At wavelengths of 400 nm, 420 nm and 580 nm, the transmission spectrum of the red color filters has transmittances of, respectively, 10 to 15%; 3 to 6%; and 25 to 30%. The wavelengths at which the transmission spectrum of the red color filters exhibits a transmittance of 50% are contained within a range of 583 to 587 nm. The peak wavelength of the transmission spectrum of the green color filters is not less than 500 nm and not more than 560 nm. At wavelengths of 480 nm and 580 nm, the transmission spectrum of the green color filters exhibits transmittances of, respectively, 45 to 55%; and 65 to 70%.

Abstract: A resist composition which generates an acid upon exposure and whose solubility in a developing solution changes under the action of an acid, including a base material including a copolymer having a structural unit represented by general formula (a9-1) or a structural unit represented by general formula (a9-2), 30 mol % or more of a structural unit represented by general formula (a10-1) and 45 mol % or more of a structural unit having an acid-decomposable group which increases a polarity under the action of an acid. In each formula, Rs is a hydrogen atom or the like; Ya91 and YaX1 are a single bond or a divalent linking group; R91 is a hydrocarbon group having 1 to 20 carbon atoms or the like; R92 is an oxygen atom or the like; j and nax1 are integers of 1 to 3; Wax1 is a (nax1+1)-valent aromatic hydrocarbon group.

Abstract: Provided is a composition that is sensitive to radiation in electromagnetic spectrum ranges for printing purposes, and includes (a) one or more binder polymers; (b) an ethylenically unsaturated compound; (c) one or more compounds that absorbs radiations in the selected region of the spectrum; (d) a sensitizer; (e) optionally a photoaccelarator; (f) an adhesion promoter; (g) a dye; and (h) optionally thermal polymerization inhibitors. Also provided is a printing plate including the radiation sensitive composition, as well as the use of the composition and an image developing process.

Abstract: Dimethoxyphenol-based monomers containing polymerizable functional groups such as [meth]acrylate groups are useful for the preparation of polymers, wherein one or more dimethoxyphenyl moieties are part of side chains pendant to the backbones of the polymers. The polymers thereby obtained may have different, improved properties, such as higher glass transition temperatures, thermal stability and solvent resistance, as compared to polymers based on other types of lignin-derived monomers.

Abstract: An extreme ultraviolet lithography pattern stack, including, an inorganic hardmask layer, an under layer on the inorganic hardmask layer, and a resist layer on the under layer, where the inorganic hardmask layer, under layer, and resist layer have a combined thickness in the range of about 8.5 nm to about 70 nm.

Abstract: A sulfonium compound having formula (1) exerts a satisfactory acid diffusion control function wherein R1, R2 and R3 are a C1-C20 monovalent hydrocarbon group which may contain a heteroatom, p=0-5, q=0-5, and r=0-4. A resist composition comprising the sulfonium compound is processed by lithography to form a resist pattern with improved resolution, LWR, MEF and CDU.

Abstract: Provided are a polymer that can be favorably used as a positive resist having a low film reduction rate in a state of low irradiation with ionizing radiation or the like and a positive resist composition that can favorably form a high-resolution pattern. The polymer includes an ?-methylstyrene unit and a methyl ?-chloroacrylate unit, and the proportion of components having a molecular weight of less than 6,000 in the polymer is no greater than 0.5%. The positive resist composition contains the aforementioned polymer and a solvent.

Abstract: Acid generator compounds are provided that are particularly useful as a photoresist composition component. In one preferred aspect, photoresists are provided that comprise (i) a polymer; (ii) a first onium salt acid generator that produces a first acid upon exposure of the photoresist composition to activating radiation; and (iii) a second onium salt acid generator that 1) comprises a covalently bound acid-labile moiety and 2) produces a second acid upon exposure of the photoresist composition to activating radiation, wherein the first acid and second acid have pKa values that differ by at least 0.5.

Abstract: Provided are ionic thermal acid generators of the following general formula (I): wherein: Ar1 represents an optionally substituted carbocyclic or heterocyclic aromatic group; W independently represents a group chosen from carboxyl, hydroxy, nitro, cyano, C1-5 alkoxy and formyl; X is a cation; Y independently represents a linking group; Z independently represents a group chosen from hydroxyl, fluorinated alcohols, esters, optionally substituted alkyl, C5 or higher optionally substituted monocyclic, polycyclic, fused polycyclic cycloaliphatic, or aryl, which may optionally comprise a heteroatom, provided at least one occurrence of Z is a hydroxyl group; a is an integer of 0 or greater; b is an integer of 1 or greater; provided that a+b is at least 1 and not greater than the total number of available aromatic carbon atoms of the aromatic group. Also provided are photoresist pattern trimming compositions and methods of trimming a photoresist pattern using the trimming compositions.

Abstract: An object of the present invention is to provide a photocurable resin composition having excellent thick-film curability and further excellent storage stability, and a cured product of the photocurable resin composition has a high concealing effect. The present invention is a photocurable resin composition containing components (A) to (E): a component (A): a leuco dye; a component (B): a photoacid generator; a component (C): a radical polymerizable compound (except for a (meth)acrylate having a tertiary amine skeleton); a component (D): a photoradical polymerization initiator; and a component (E): a tertiary amine compound.

Abstract: Provided is a resist underlayer film composition which is excellent in resistance to a basic hydrogen peroxide aqueous solution, in gap-filling and planarization characteristics, and in dry etching characteristic, wherein the resist underlayer film composition is used for a multilayer resist method, comprising: (A1) a polymer (1A) comprising one, or two or more, of a repeating unit represented by following general formula (1); (A2) one, or two or more, of a polyphenol compound having a formula weight of 2,000 or less and not having a 3,4-dihydroxy phenyl group; and (B) an organic solvent.

Abstract: Provided are a polymer that can be favorably used as a positive resist having a low film reduction rate under low irradiation, a high ? value, and high sensitivity, and a positive resist composition that can efficiently form a high-resolution pattern. The polymer includes an ?-methylstyrene unit and a methyl ?-chloroacrylate unit, and has a molecular weight distribution (Mw/Mn) of less than 1.48. In the polymer, the proportion of components having a molecular weight of less than 6,000 is no greater than 0.5% and the proportion of components having a molecular weight of greater than 80,000 is no greater than 6.0%. The positive resist composition contains the aforementioned polymer and a solvent.

Abstract: Provided is an actinic-ray- or radiation-sensitive resin composition including a resin (A) and any of compounds (B) of general formula (I) below. (In general formula (I), Rf represents a fluorine atom or a monovalent organic group containing at least one fluorine atom; R1 represents a hydrogen atom or a monovalent substituent containing no fluorine atom; X1 represents a monovalent organic group having at least two carbon atoms, or a methyl group in which a substituent other than a fluorine atom is optionally introduced, provided that X1 may be bonded to R1 to thereby form a ring; and Z represents a moiety that when exposed to actinic rays or radiation, is converted to a sulfonic acid group, an imidic acid group or a methide acid group).

Abstract: A sulfonic acid anion-containing polymer having an alkylsulfonium cation not in covalent bond thereto can be readily prepared by reacting a sulfonic acid anion-containing polymer having an ammonium or metal cation with an alkylsulfonium salt under mild conditions. A resist composition comprising the inventive polymer is effective for suppressing acid diffusion since the sulfonium salt is bound to the polymer backbone. When processed by the ArF lithography, the polymer exhibits a lower absorption at the exposure wavelength than the triarylsulfonium salt form PAGs, resulting in improved resolution, mask fidelity, and LWR.

Abstract: A pattern-forming method comprises: forming a resist underlayer film on an upper face side of a substrate; forming a silicon-containing film on an upper face side of the resist underlayer film; and removing the silicon-containing film with a basic aqueous solution. The pattern-forming method does not include, after the forming of the silicon-containing film and before the removing of the silicon-containing film, treating the silicon-containing film with a treatment liquid comprising an acid or a fluorine compound. The silicon-containing film is preferably formed a hydrolytic condensation product of a composition containing a compound represented by formula (1) in an amount of no less than 60 mol % with respect to total silicon compounds. X represents a halogen atom or —OR2, and R2 represents a monovalent organic group.

Abstract: Provided are a polymer used for a manufacturing process of a semiconductor and a display, a resist underlayer film composition containing the polymer for a manufacturing process of a semiconductor and a display, and a method for manufacturing semiconductor device using the composition, and more specifically, the polymer of the present disclosure simultaneously has optimized etching selectivity and planarization characteristics, such that the resist underlayer film composition containing the polymer is usable as a hard mask for a multilayer semiconductor lithography process.

Abstract: The present invention is a metal colloid solution comprising: colloidal particles consisting of metal particles consisting of one or two or more metal(s) and a protective agent bonding to the metal particles; and a solvent as a dispersion medium of the colloidal particles, wherein: a chloride ion concentration per a metal concentration of 1 mass % is 25 ppm or less; and a nitrate ion concentration per a metal concentration of 1 mass % is 7500 ppm or less. In the present invention, adsorption performance can be improved with adjustment of the amount of the protective agent of the colloidal particles. It is preferable to bind the protective agent of 0.2 to 2.5 times the mass of the metal particles.

Abstract: Acid generator compounds are provided that are particularly useful as a photoresist composition component. In one preferred aspect, acid generators are provided that comprise one or more hydrophilic moieties.

Abstract: New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprises two or more distinct materials that can be substantially non-mixable with a resin component of the resist. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

Abstract: A resist composition comprising a base polymer and a biguanide salt compound offers a high dissolution contrast, minimal LWR, and dimensional stability on PPD.

Abstract: A pattern-forming method comprises forming a prepattern that is insoluble or hardly soluble in an organic solvent. A first composition is applied on at least lateral faces of the prepattern to form a resin layer. Adjacent regions to the prepattern of the resin layer are insolubilized or desolubilized in the organic solvent without being accompanied by an increase in a molecular weight by heating the prepattern and the resin layer. Regions other than the adjacent regions insolubilized or desolubilized of the resin layer are removed with the organic solvent. The first composition comprises a first polymer having a solubility in the organic solvent to be decreased by an action of an acid. At least one selected from the following features (i) and (ii) is satisfied: (i) the first polymer comprises a basic group; and (ii) the first composition further comprises a basic compound.

Abstract: A sulfonic acid derivative, wherein the sulfonic acid derivative is represented by the following general formula (1): R1COOCH2CH2CFHCF2SO3?M+??(1) where: R1 represents a monovalent organic group having carbon number of 1 to 200, having at least one hydroxyl group and optionally having a substituent other than the hydroxyl group; and M+ represents a counter cation.

Abstract: Provided are a near infrared ray absorbent composition which can form a cured film having excellent near infrared ray shielding properties, a near infrared ray cut filter, a manufacturing method of a near infrared ray cut filter, a solid image pickup element, and a camera module. The near infrared ray absorbent composition includes a copper complex that is other than a copper phthalocyanine complex and has a maximum absorption wavelength in a wavelength range of 700 to 1,200 nm and in which a molar light absorption coefficient at the maximum absorption wavelength is greater than or equal to 100 (L/mol·cm).

Abstract: Flexographic printing members are prepared from a flexographic printing plate precursor consisting essentially of: backing film, water- or water-dispersible photosensitive layer, and cover sheet in contact with the photosensitive layer. The cover sheet is removed and a mask element is laminated directly in contact with the photosensitive layer. Exposure through the mask element provides exposed regions and non-exposed regions. The non-exposed regions are removed with an aqueous developer having: a) a C12-20 saturated or unsaturated fatty acid (or alkali metal salt) at 0.25-2.0 weight %, and at least 85 weight % of a C18 mono- or poly-unsaturated fatty acid (or alkali metal salt); b) an aminopolycarboxylic acid (or alkali metal salt) at 0.05-0.30 weight %; c) a buffer at 05-0.60 weight %; and d) water. The photosensitive layer has a controlled release of 5-500 g/cm using ASTM D-3330 Method D, between its front imaging surface and the mask element.

Abstract: A method for manufacturing a field-effect transistor includes forming an active layer of an oxide semiconductor, forming a conducting film to cover the active layer, patterning the conducting film through an etching process using an etchant to form a source electrode and a drain electrode, and performing, at least before the patterning the conducting film, a treatment on the active layer so that an etching rate of the active layer is less than an etching rate of the conducting film.

Abstract: Photoresist topcoat compositions, comprising: a first polymer comprising a first repeat unit of general formula (I) and a second repeat unit of general formula (II): wherein: R1 independently represents H, F or optionally fluorinated C1 to C4 alkyl; R2 represents optionally fluorinated linear, branched or cyclic C1 to C20 alkyl; L1 represents a single bond or a multivalent linking group; and n is an integer of from 1 to 5; a second polymer comprising a first repeat unit of general formula (III) and a second repeat unit of general formula (IV): wherein: R3 independently represents H, F or optionally fluorinated C1 to C4 alkyl; R4 represents linear, branched or cyclic C1 to C20 alkyl; R5 represents linear, branched or cyclic C1 to C20 fluoroalkyl; L2 represents a single bond or a multivalent linking group; and n is an integer of from 1 to 5; and a solvent. Coated substrates coated with the described topcoat compositions and methods of processing a photoresist composition are also provided.

Abstract: A problem of The present invention is to provide a curable composition capable of forming a resist which can be easily washed after curing and which has high dry etching resistance and excellent precision of fine pattern transfer, also provide a resist film and a laminate each containing the curable composition, and further provide a pattern forming method using the resist film. The problem of the present invention can be solved by providing a curable composition containing a multifunctional polymerizable monomer (A) which has two or more groups having a polymerizable group and has at least one group Q having a polymerizable group represented by formula (1) below, the amount of silicon atoms in an nonvolatile content being 10 wt % or more.

Abstract: The present invention provides a positive photosensitive resin composition containing (A) a polymer compound containing a siloxane chain, the polymer compound having a repeating unit shown by the general formula (1) and a weight average molecular weight of 3,000 to 500,000, (B) a photosensitive material capable of generating an acid by light and increasing a dissolution rate in an aqueous alkaline solution, (C) a crosslinking agent, and (D) a solvent. There can be provided a positive photosensitive resin composition that can remedy the problem of delamination caused on a metal wiring such as Cu and Al, an electrode, and a substrate, especially on a substrate such as SiN, and can form a fine pattern having a forward tapered shape without generating a scum and a footing profile in the pattern bottom and on the substrate when a widely used 2.38% TMAH aqueous solution is used as the developer.

Abstract: Stereoselective and regioselective synthesis of compounds via nucleophilic ring opening reactions of aziridinium ions for use in stereoselective and regioselective synthesis of therapeutic and diagnostic compounds.

Abstract: The present disclosure relates to a passivation layer comprising a photocrosslinked fluoropolymer and a process for forming the layer. Passivation layers comprising the crosslinked fluoropolymer have low dielectric constants, low water absorptivity and are able to be photoimaged so as to provide the very fine features needed for modern electronic equipment.

Abstract: Provided are: a transparent polyimide copolymer which satisfies solvent solubility, storage stability, heat resistance, mechanical strength and thermal yellowing resistance at high levels and has excellent utility; a polyimide resin composition; a molded article; and a production method of the copolymer. The transparent polyimide copolymer is obtained by copolymerizing: (A) 4,4?-oxydiphthalic dianhydride and/or 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride; and (B) at least one diamine and/or diisocyanate represented by the following Formulae (1) to (3): (wherein, X represents an amino group or an isocyanate group; R1 to R8 each independently represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, an alkenyl group having 2 to 4 carbon atoms or an alkoxy group having 1 to 4 carbon atoms; and at least one of the R1 to R8 is not a hydrogen atom).

Abstract: The onium salt of the present invention contains predetermined compound A represented by the general formula (1). The composition of the present invention contains the onium salt of the present invention, and an onium salt containing predetermined compound B represented by the general formula (2). The onium salt and the composition of the present invention exert well-balanced excellent physical properties in terms of cold curing properties, storage stability, thermal shock resistance after curing, and moisture resistance.

Abstract: A method of forming a pattern comprises diffusing an acid, generated by irradiating a portion of a photosensitive layer, into an underlayer comprising an acid sensitive copolymer comprising an acid decomposable group and an attachment group, to form an interpolymer crosslink and/or covalently bonded to the surface of the substrate. Diffusing comprises heating the underlayer and photosensitive layer. The acid sensitive group reacts with the diffused acid to form a polar region at the surface, in the shape of the pattern. The photosensitive layer is removed to forming a self-assembling layer comprising a block copolymer having a block with an affinity for the polar region, and a block having less affinity than the first. The first block forms a domain aligned to the polar region, and the second block forms a domain aligned to the first. Removing either the first or second domain exposes a portion of the underlayer.