Abstract: The present invention relates to novel polyurethane compositions which are advantageous for the production of holographic media, inter alia for data storage, but also for optical applications of different types.

Abstract: A resin composition for laser engraving comprising a binder polymer contains at least one polyester (A) selected from the group consisting of a polyester containing a hydroxycarboxylic acid unit, polycaprolactone, poly(butylene succinic acid), and derivatives thereof.

Abstract: A photosensitive resin composition which is effective in avoiding troubles in the step of plating with various metals in printed wiring board production, such as under-film metal deposition and film peeling, and which forms a wiring-protecting film excellent in adhesion, flexibility, insulation reliability, and heat resistance. The photosensitive resin composition comprises (A) a carboxylated polymer, (B) a compound having at least two photopolymerizable unsaturated double bonds, (C) a photopolymerization initiator, and (D) a nitrogen compound represented by a specific feature.

Abstract: The actinic ray-sensitive or radiation-sensitive resin composition according to the present invention includes a resin (A) which contains at least one type of repeating unit which is represented by the general formula (PG1), at least one type of repeating unit which is selected from the repeating units which are represented by the general formula (PG2) and the general formula (PG3), and at least one type of repeating unit which includes a lactone structure, a compound (B) which is a compound which is represented by the general formula (B1) and where the molecular weight of an anion moiety is 200 or less, and a solvent (C).

Abstract: A resist composition having a resin having a structural unit represented by the formula (I), a resin being insoluble or poorly soluble in alkali aqueous solution, but becoming soluble in an alkali aqueous solution by the action of an acid and not including the structural unit represented by the formula (I), and an acid generator represented by the formula (II), wherein R1, A1, A13, A14, X12, Q1, Q2, L1, ring W1 and Z+ are defined in the specification.

Abstract: A radiation-sensitive resin composition includes a polymer and a photoacid generator. The polymer includes a first structural unit shown by a formula (a1), a second structural unit shown by a formula (a2), and a third structural unit having a lactone structure. A content of the first structural unit in the polymer being 50 mol % or more based on total structural units included in the polymer. The first structural unit is preferably a structural unit shown by a formula (a1-1).

Abstract: A resist composition having; a resin having a structural unit represented by the formula (I), a resin being insoluble or poorly soluble in alkali aqueous solution, but becoming soluble in an alkali aqueous solution by the action of an acid and not including the structural unit represented by the formula (I), an acid generator, and a salt having an anion represented by the formula (IA). wherein R1, A1, A13, X12, A14, R1A and R2A are defined in the specification.

Abstract: A resist composition having a resin having a structural unit represented by the formula (I), a resin being insoluble or poorly soluble in alkali aqueous solution, but becoming soluble in an alkali aqueous solution by the action of an acid and not including the structural unit represented by the formula (I), and an acid generator represented by the formula (II), wherein R1, A1, A13, A14, X12, RII1, RII2, LII1, YII1, RII3, RII4, RII5, RII6, RII7, n, s and RII8 are defined in the specification.

Abstract: A resist composition having a resin having a structural unit represented by the formula (I), a resin being insoluble or poorly soluble in alkali aqueous solution, but becoming soluble in an alkali aqueous solution by the action of an acid and not including the structural unit represented by the formula (I), and an acid generator, wherein R1, A1, A13, A14, X12, R3, R4, m? and n? are defined in the specification.

Abstract: A resist composition having a resin having a structural unit represented by the formula (I), a resin being insoluble or poorly soluble in alkali aqueous solution, but becoming soluble in an alkali aqueous solution by the action of an acid and not including the structural unit represented by the formula (I), and an acid generator represented by the formula (II), wherein R1, A1, R2, Q1 and Q2, L1, ring W, Rf1 and Rf2, n and Z+ are defined in the specification.

Abstract: A resist composition having a resin having a structural unit represented by the formula (I), a resin being insoluble or poorly soluble in alkali aqueous solution, but becoming soluble in an alkali aqueous solution by the action of an acid and not including the structural unit represented by the formula (I), and an acid generator, wherein R1, A1, A13, A14, X12, Rb1, Rb2, Lb1, ring Wb1, Rb3, Rb4, m and Z1+ are defined in the specification.

Abstract: A resist composition having a resin having a structural unit represented by the formula (I), a resin being insoluble or poorly soluble in alkali aqueous solution, but becoming soluble in an alkali aqueous solution by the action of an acid and not including the structural unit represented by the formula (I), and an acid generator represented by the formula (II), wherein R1, A1, A13, A14, X12, R23, R24, R25, X21 and Z1+ are defined in the specification.

Abstract: A resist composition having a resin having a structural unit represented by the formula (I), a resin being insoluble or poorly soluble in alkali aqueous solution, but becoming soluble in an alkali aqueous solution by the action of an acid and not including the structural unit represented by the formula (I), and an acid generator, wherein R1, A1, R2, Rb1, Rb2, Lb1, ring Wb1, Rb3, Rb4, and Z1+ are defined in the specification.

Abstract: A resist composition having a resin having a structural unit represented by the formula (I), a resin being insoluble or poorly soluble in alkali aqueous solution, but becoming soluble in an alkali aqueous solution by the action of an acid and not including the structural unit represented by the formula (I), and an acid generator represented by the formula (II), wherein R1, A1, A13, A14, X12, Q1, Q2, L1, ring W, Rf1 and Rf2, n and Z+ are defined in the specification.

Abstract: A resist composition having a resin having a structural unit represented by the formula (I), a resin being insoluble or poorly soluble in alkali aqueous solution, but becoming soluble in an alkali aqueous solution by the action of an acid and not including the structural unit represented by the formula (I), and an acid generator represented by the formula (II), wherein R1, A1, R2, RII1, RII2, LII1, YII1, RII3, RII4, RII5, RII6, RII7, n, s and RII8 are defined in the specification.

Abstract: The present invention relates to a photosensitive resin composition that includes a polymer prepared by using a macromonomer as an alkali soluble resin. The photosensitive resin composition is used for various types of purposes such as a photoresist for preparing a color filter, an overcoat photoresist, a column spacer, and an insulating material having a light blocking property, and improves physical properties such as residue or not, chemical resistance, and heat resistance of the photoresist.

Abstract: Provided is an actinic-ray- or radiation-sensitive resin composition including (A) a resin that when acted on by an acid, is decomposed to thereby increase its solubility in an alkali developer, (B) an onium salt containing a nitrogen atom in its cation moiety, which onium salt when exposed to actinic rays or radiation, is decomposed to thereby generate an acid, and (C) a compound that when exposed to actinic rays or radiation, generates an acid, the compound being any of compounds of general formulae (1-1) and (1-2) below.

Abstract: The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.

Abstract: The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.

Abstract: An object of the present invention is to provide a negative resin composition which can produce a pattern with high sensitivity, high resolution and low line edge roughness in pattern formation by exposure to electron beams or EUV, a method for producing a relief pattern and an electronic component using the negative resist composition. Disclosed is a negative resist composition comprising a phenolic compound (A) which has: two or more phenolic hydroxyl groups per molecule; one or more substituents of one or more kinds selected from the group consisting of a hydroxymethyl group and an alkoxymethyl group per molecule in the ortho-position of any of the phenolic hydroxyl groups; and a molecular weight of 400 to 2,500, wherein the content of the phenolic compound (A) is 70% by weight or more of the total solid content of the negative resist composition.

Abstract: The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.

Abstract: The present invention provides a hologram recording material which attains high refractive index change, high flexibility, high sensitivity, low scattering, environment resistance, durability, low dimensional change and high multiplicity, and is suitable for volume hologram recording. Also, the present invention provides a hologram recording medium. A hologram recording material comprising: an organometallic compound at least containing at least two kinds of metals, oxygen, and an aromatic group and having an organometallic unit wherein two aromatic groups are bonded directly to one metal; and a photopolymerizable compound. One of the at least two kinds of metals is Si, and the metal(s) other than Si is/are preferably selected from the group consisting of Ti, Zr, Ge, Sn, Al and Zn. The organometallic unit is preferably a unit wherein two aromatic groups are bonded directly to one Si atom. A hologram recording medium (11) has a hologram recording material layer (21).

Abstract: An ultraviolet curable inkjet recording ink of the present invention includes at least a colorant, a light-curable compound, a photopolymerization initiator, and at least one fluorine surfactant represented by the following formulae (1) or (2) as a surface tension regulator: where Rf is selected from CH2CF3 and CH2CF2CF3; n represents a value of 5 to 20; and each R1 represents a functional group capable of initiating an ultraviolet curing reaction and one of the two R1s in (1) may be hydrogen; where Rf is selected from CH2CF3 and CH2CF2CF3; l represents a value of 1 to 20; k and m each represent a value of 1 to 8; each R2 represents a functional group capable of initiating an ultraviolet curing reaction and one of the two R2s in (2) may be hydrogen; and R3 is selected from hydrogen and methyl.

Abstract: The present invention relates to a photosensitive resin composition which is developable with an alkaline aqueous solution and does not need a high temperature for curing and the like, and has all the properties suitable for use in a cover film of a printed circuit board or a laminated body for a semiconductor, and a dry film comprising the same. The photosensitive resin composition comprises (A) a polyamic acid comprising a polymer of at least one diamine compound and at least one acid dianhydride; (B) a photopolymerizable compound having at least one polymerizable ethylenic unsaturated bond in its molecule; and (C) a photoinitiator.

Abstract: The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.

Abstract: The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.

Abstract: To provide a coloring photosensitive composition and a lithographic printing plate precursor, ensuring that coloring stability after exposure by infrared laser exposure is good and high coloring is obtained even when exposed after the elapse of time. These can be a coloring photosensitive composition containing a microgel encapsulating (A) a polymer having a glass transition temperature of 50° C. or more, (B) a photoinitiator, and (C) an infrared absorbing dye, and a lithographic printing plate precursor having an image-recording layer containing the composition.

Abstract: The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.

Abstract: The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.

Abstract: The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.

Abstract: The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.

Abstract: The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.

Abstract: The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.

Abstract: The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.

Abstract: The present invention provides a hologram recording material which attains high refractive index change, flexibility, high sensitivity, low scattering, environment resistance, durability, low shrinkage, and high multiplicity, and is suitable for volume hologram recording. Also, the present invention provides a hologram recording medium. A hologram recording material comprising: an organometallic compound at least containing at least two kinds of metals, oxygen, and an aromatic group, and having an organometallic unit wherein two aromatic groups are bonded directly to one metal; metal oxide fine particles; and a photopolymerizable compound. For example, the metal oxide fine particles are selected from the group consisting of silica fine particles, alumina fine particles, titania fine particles, zirconia fine particles, and complex oxide fine particles containing one or more kinds of metal atoms which constitute said four metal oxides. A hologram recording medium 11 has a hologram recording material layer 21.

Abstract: Disclosed are: an underlayer underlayer film material for use in the formation of a resist underlayer film, which is highly soluble in safe solvents, has excellent etching resistance, and does not substantially cause the production of any sublimation product; and a resist pattern formation method using the underlayer film material. Specifically disclosed are: an underlayer film material comprising a cyclic compound that can have two or more specific structures; and a resist pattern formation method using the underlayer film material.

Abstract: An actinic-ray- or radiation-sensitive resin composition according to the present invention includes (A) a resin to be decomposed to increase its solubility in an alkali developer when acted on by an acid, and (B) a compound represented by the general formula (1-1) below.

Abstract: Provided are a processed pigment excellent in dispersibility and dispersion stability, a pigment-dispersed composition excellent in dispersibility and dispersion stability of a pigment that uses the processed pigment, a colored photosensitive composition using the pigment-dispersed composition, and a color filter having improved color properties that uses the colored photosensitive composition, in which a pigment is covered with at least one of a specific polymer compound selected from the following (SP-1) to (SP-3); (SP-1) A polymer compound having a heterocycle on a side chain, (SP-2) A graft polymer compound having a weight average molecular weight of from 1,000 to 100000, (SP-3) A polymer compound represented by the following formula (3-1), wherein, RC, RD, A1 and P1 respectively represent an organic linkage group, a single bond or a divalent organic linkage group, a monovalent organic group containing such as an organic dye structure, and a polymer skeleton.

Abstract: Provided is a method that provides both spatial and temporal control of a polymer degradation process using mono- and multifunctional macromolecular monomers (“macromers”) that degrade via single- and multi-photon photolysis mechanisms over a broad range of wavelengths. The macromers can form or be incorporated into networks via covalent, non-covalent and/or ionic interactions. The spatial and temporal degradation of these networks can be controlled. More specifically, provided is a photodegradable macromer, comprising: (a) a photodegradable group; (b) a backbone structure comprising one or more repeating units that may be the same or different, which backbone structure is attached to the photodegradable group directly or through a linker; (c) one or more reactive end groups at one or more ends of the macromer; and optionally, (d) one or more therapeutic agents; and optionally (e) one or more caged groups.

Abstract: A printing plate having a substrate and a radiation sensitive, negative working, organic, polymerizable, photosensitive (PS) resin coating non-ionically adhered to the substrate such that the cohesion of the PS coating exceeds the adhesion of the PS coating to the substrate. The PS coating contains active components that participate in radiation induced polymerization, all of which active components are soluble in non-aqueous solvents and none of which active components are soluble or dispersible in any of the group of fluids consisting of water, fountain solution, ink, and press ink. The PS coating has sufficient cohesion and surface tack to adhere to and be mechanically pulled off the substrate by press ink as particulates without dissolution or dispersion into the press ink.

Abstract: The present invention provides a hologram recording material which is not required to be subjected to pre-exposure treatment at the time of recording, attains high refractive index change, high sensitivity, low scattering, environment resistance, durability, low dimensional change, and high multiplicity, and is suitable for volume hologram recording. Also, the present invention provides a hologram recording medium. A hologram recording material comprising a matrix material having a softening temperature of 50° C. or higher, and a photopolymerizable monomer which is in a liquid phase state at room temperature. The matrix material is preferably contained in an amount of 50% by weight or more and 90% by weight or less of the whole of the hologram recording material. A softening temperature of the hologram recording material is preferably 0° C. or higher.

Abstract: A salt represented by formula (I): wherein Q1 and Q2 independently each represent a fluorine atom or a C1-C6 perfluoroalkyl group, n represents 0 or 1, Ll represents a single bond or a C1-C10 alkanediyl group in which a methylene group may be replaced by an oxygen atom or carbonyl group, provided that Ll is not a single bond when n is 0, ring W represents a C3-C36 aliphatic ring in which a methylene group may be replaced by an oxygen atom, a sulfur atom, a carbonyl group or a sulfonyl group and in which a hydrogen atom may be replaced by a hydroxyl group, a C1-C12 alkyl group or a C1-C12 alkoxy group, Rl represents a hydroxyl group or a hydroxyl group protected by a protecting group, and Z+ represents an organic cation.

Abstract: A photosensitive resin composition and a method for forming patterns by using the same are disclosed. The photosensitive resin composition comprises a novolac resin (A), an ortho-naphthoquinone diazide sulfonic acid ester (B) and a ketol solvent (C). The novolac resin (A) includes a high-ortho novolac resin (A-1) that has ortho-ortho methylene bonding to all methylene bonding in a ratio of 18% to 25%, and a weight ratio (A-1)/(C) of the high-ortho novolac resin (A-1) to the ketol solvent (C) is 0.1 to 2.0, thereby exhibiting excellent temporal stability and further forming patterns with superior film to thickness uniformity and high resolution.

Abstract: To provide a resist composition capable of prevention of the formation of abnormal resist pattern shapes for efficient, high-precision formation of fine, high-resolution resist patterns, a resist pattern forming process capable of efficient, high-precision formation of finer, high-resolution resist patterns by using the resist composition, and a method for manufacturing a semiconductor device. The resist composition of the present invention includes a base resin, a photoacid generator, a first additive, and a second additive, wherein the pKa of the second additive is higher than the pKa of the first additive, and at a resist formation temperature, the vapor pressure of the second additive is lower than the vapor pressure of the first additive.

Abstract: It is intended to provide the following resin composition for stereolithography which is superior in storage stability and aging stability during operation, shows no increase in viscosity upon prolonged storage, has a high light-curing sensitivity and, therefore, makes it possible to produce, upon photo irradiation, an object by stereolithography, which is superior in dimensional accuracy, fabricating accuracy, water resistance, moisture resistance and mechanical properties at a high fabricating speed and a high productivity.

Abstract: Provided is a method of forming a pattern, ensuring excellent sensitivity, limiting resolving power, roughness characteristic, exposure latitude (EL), dependence on post-exposure bake (PEB) temperature and focus latitude (depth of focus DOF), and a resist composition for use in the method. The method comprises (A) forming a film from a resist composition comprising a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, which resin thus when acted on by an acid decreases its solubility in a developer containing an organic solvent, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent.

Abstract: A pattern forming method comprising (i) a step of forming a film from a chemical amplification resist composition, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using a developer containing an organic solvent, wherein the resist composition contains (A) a resin, (B) a compound capable of generating a specific acid upon irradiation with an actinic ray or radiation, (C) a crosslinking agent, and (D) a solvent.

Abstract: A sensitive liquid crystalline polymeric material suitable for the reflective hologram recording and the preparing method thereof are disclosed. The material includes a base film, a buffer layer coated on one side of the base film, a sensitive polymeric layer coated on the other side of the buffer layer and a protective layer coated on the surface of the sensitive polymeric layer.

Abstract: A salt represented by formula (I): wherein Q1 and Q2 each independently represent a fluorine atom or a C1-C6 perfluoroalkyl group, A1 represents a C1-C30 monovalent organic group, X1 represents a C1-C10 aliphatic hydrocarbon group where a hydrogen atom may be replaced by a hydroxy group, m1 and m2 independently each represent an integer of 1 to 4, and Z+ represents an organic cation.

Abstract: Provided are an oxide semiconductor composition, a preparation method thereof, an oxide semiconductor thin film using the composition, and a method of forming an electronic device. The oxide semiconductor composition includes a photosensitive material and an oxide semiconductor precursor.