Abstract: There is disclosed a fluorine-containing polymerizable cyclic olefin compound that has one or more partial structures represented by the following general formula (1) or (2).

Abstract: The present invention relates to a process for the manufacture of PVDF homopolymer or copolymer by radical polymerization of vinylidene fluoride (VDF), and optionally of a comonomer, in aqueous dispersion and in the presence of a transfer agent, of a persulphate as radical initiator, optionally of a surface-active additive and optionally of a paraffin wax, in which: a) sodium acetate is added, either at the start of or during or after the polymerization, b) a potassium alkylsulphonate is optionally added after the polymerization, c) an aqueous PVDF dispersion is obtained, d) the PVDF is collected by atomizing the dispersion obtained in c) with air at a temperature of between 120 and 220° C., the aqueous dispersion obtained in c) not being washed with water before atomizing.

Abstract: A ternary copolymer comprising units of ?-trifluoromethylacrylic carboxylate having acid labile groups substituted thereon, units of ?-trifluoromethylacrylic carboxylate having adhesive groups substituted thereon, and units of styrene having hexafluoroalcohol pendants is highly transparent to VUV radiation and resistant to plasma etching. A resist composition using the polymer as a base resin is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, and is suited for lithographic microprocessing.

Abstract: A method for making a polymer or oligomer comprising the steps of making a first monomer comprising a substituted aromatic or heteroaromatic group by providing an aromatic or heteroaromatic group substituted with first and second director groups, performing metalisation at a first position on the aromatic or heteroaromatic group, performing electrophilic substitution so as to provide a first substituent group at the first position, and contacting in a reaction mixture the first monomer with at least two further monomers that independently are the same or different from the first monomer under conditions so as to form a polymer or oligomer, wherein the nature and positions of the first and second director groups regioselect the first position.

Abstract: A resist composition comprising a blend of a cyclic polymer having alcoholic groups as soluble groups and a polymer having carboxyl or hexafluoroalcohol groups whose hydrogen atoms are replaced by acid labile groups as a base resin forms a resist film which is improved in transparency, alkali dissolution contrast and plasma etching resistance.

Abstract: Coating compositions are described that can be used to impart hydrophobicity, oleophobicity, stain resistance, or combinations thereof to various substrates. The coating compositions include an amino resin and a reactive fluorinated copolymer. The reactive fluorinated copolymer has pendant perfluoropolyether groups as well as pendant groups capable of reacting with the amino resin. The pendant perfluoropolyether groups of the reactive fluorinated copolymer have a molecular weight of at least 750 g/mole. Articles and methods of preparing articles using the coating compositions are also described.

Abstract: A fluorine-containing polymer prepared from at least a spacer group selected from the group consisting of ethylene, alpha-olefins, 1,1?-disubstituted olefins, vinyl alcohols, vinyl ethers, and 1,3-dienes; and a norbornyl radical containing a functional group containing the structure: —C(Rf)(Rf?)Orb wherein Rf and Rf? are the same or different fluoroalkyl groups of from 1 to about 10 carbon atoms or taken together are (CF2)n wherein n is an integer ranging from 2 to about 10 and Rb is a hydrogen atom or an acid- or base-labile protecting group; r is an integer ranging from 0-4. The fluorine-containing polymer has an absorption coefficient of less than 4.0 mm?1 at a wavelength of 157 nm. These polymers are useful in photoresist compositions for microlithography. They exhibit high transparency at this short wavelength and also possess other key properties, including good plasma etch resistance and adhesive properties.

Abstract: Monofunctional polyfluorooxetane oligomers, polymers, and co-polymers are prepared by the cationic polymerization of fluorooxetane monomers with a monoalcohol. In addition to serving as an initiator, the monoalcohol can also serve as a solvent for the fluorooxetane or other monomers to produce oligomers, polymers, or copolymers having low cyclic content. Suitable comonomers generally include various cyclic ethers. The polyfluorooxetane oligomer, polymer, or copolymer having a single hydroxyl end group can be functionalized with a variety of compounds so as to yield a functional end group such as an acrylate, a methacrylate, an allylic, an amine, etc., with the functionalized oligomer or polymer being suitable for use in radiation curable or thermal curable coating compositions. These functionalized polymers can be copolymerized and cured to provide improvements in wetting and surface properties.

Abstract: The present invention is a fluorine containing ethylene copolymer obtained by the copolymerization of ethylene with suitable fluorine-containing comonomer compounds, wherein the fluorine-containing comonomer compound is present at a concentration of up to 40% by weight, based on the total weight of the ethylene copolymer.

Abstract: A monomer containing an electron-withdrawing group of the present invention is represented by following Formula (a), (b) or (c): wherein A1, A2, and A3 are each a ring; Ra, Rb, Rc, and Ru are the same or different and are each a hydrogen atom or organic group; at least one of Rs, Rw and Rv, at least one of Rt and Rw1, and at least one of the two Rw2s are each an electron-withdrawing group, and the others are each a hydrogen atom or organic group; W1 is a single bond or linkage group; and n denotes an integer of 2 to 25, where at least two of Ra, Rb, Rc, Rs, Rt, Ru, Rv, Rw, Rw1, Rw2, W1, and carbon atoms constituting ring A1, carbon atoms constituting ring A2, and carbon atoms constituting ring A3 may be combined to form a ring, respectively. The electron-withdrawing groups in Rs, Rt, Rv, Rw, Rw1, and Rw2 are, for example, groups each containing a fluorine atom. The monomer is useful as a raw material for photoresist polymeric compounds.

Abstract: The present invention relates to fluorinated polyethers having a fluorinated aliphatic group at a main chain as represented by the formula (1), as well as a waveguide fabricated using the same: where RF represents OCH2(CF2)nCH2O, or OCH2CF2O(CF2CF2O)nCF2CH2O, where n is a natural number ranging from 1 to 12; Ar1 represents ?where B is not present or a C?O group, or Ar1 represents ?where Hal is one selected from F, Cl, Br and I; Ar2 represents ?where D is one selected from —C(CF3)2, —C(CH3)2, —CO—, —SO2—, —O— and —S—, or Ar2 represents ?where R1 and R2 are the same or different and each independently represents a halogen atom selected from F, Cl, Br and I, and m is a natural number of 1-3, or Ar2 represents E represents H, or ?where P is H or a substituted or unsubstituted phenyl group; x is a number ranging from 0.1 to 1.0; y is 1.0?x.

Abstract: A positive-working resist composition comprising: (A1) a resin containing a repeating unit represented by the specific formula, which increases the solubility in an alkali developing solution by the action of an acid, and (B) a compound capable of generating an acid upon irradiation with one of actinic rays and radiation.

Abstract: Amorphous perfluorinated copolymers, comprising cyclic perfluorinated units deriving from at least two different perfluorinated comonomers, optionally with units deriving from a perfluorinated monomer containing at least one olefinic unsaturation (perfluoroolefin), or comprising cyclic perfluorinated units and units deriving from a perfluorinated monomer containing at least one olefinic unsaturation, said perfluorinated copolymers having the following combination of properties: substantial absence of unstable polar end groups, polymer Tg higher than 120° C., narrow monomeric composition distribution.

Abstract: Novel photoresists containing at least about 0.2 molar ratio of a base with respect to the concentration of a photoacid generator present and their preparation are described. It has been discovered that inclusion of a sufficient amount of base counteracts the detrimental effects of photoacid generators, thus providing resists having submicron linewidth resolution.

Abstract: High purity fluoropolymers are obtained by the emulsion polymerization process, removing essentially all ions and coagulating the polymer essentially without adding ions. These polymers are useful in the field of electronic devices.

Abstract: A photosensitive polymer including fluorine, a resist composition containing the same and a patterning method for IC fabrication using the resist composition are provided. The photosensitive polymer having at least one selected from the group consisting of fluorine-substituted or unsubstituted alkyl ester, tetrahydropyranyl ester, tetrahydrofuranyl ester, nitrile, amide, carbonyl and hexafluoro alkyl having a hydrophilic group, and a trifluorovinyl derivative monomer as a repeating unit and having a weight average molecular weight of about 3,000 to about 100,000. The photosensitive polymer exhibits high transmittance for a light source of F2 (157 nm), high dry etching resistance, and has characteristics suitable to realize an unitrafine pattern size.

Abstract: A photosensitive composition having low absorption loss at 1,300-1,610 nm and is suitable for practical waveguide devices. The composition comprises at least one (meth)acrylate prepared from a fluorinated monomer or polymer having minimum two hydroxyl groups, at least one multifunctional non-fluorinated (meth)acrylate and at least one photoinitiator. An optical coating on a variety of substrates is obtained by exposing the photosensitive composition to actinic radiation such as UV light. An optical waveguide device is fabricated by patterning the photosensitive composition on a substrate.

Abstract: Monofunctional polyfluorooxetane oligomers, polymers, and copolymers are prepared by the cationic polymerization of fluorooxetane monomers with a monoalcohol. In addition to serving as an initiator, the monoalcohol can also serve as a solvent for the fluorooxetane or other monomers to produce oligomers, polymers, or copolymers having low cyclic content. Suitable comonomers generally include various cyclic ethers. The polyfluorooxetane oligomer, polymer, or copolymer having a single hydroxyl end group can be functionalized with a variety of compounds so as to yield a functional end group such as an acrylate, a methacrylate, an allylic, an amine, etc., with the functionalized oligomer or polymer being suitable for use in radiation curable or thermal curable coating compositions. These functionalized polymers can be copolymerized and cured to provide improvements in wetting and surface properties.

Abstract: To provide a method of reducing contents of metal components of a fluorine-containing elastomer through preparation thereof and a molded article obtained from the fluorine-containing elastomer having sufficiently reduced contents of metal components. The method of reducing a metal content of the fluorine-containing elastomer through preparation thereof without using a metal oxide, in which among materials excluding a gaseous monomer which are used for polymerization of a fluorine-containing monomer, coagulation and drying, at least one of them contains substantially no metal component, and the fluorine-containing elastomer which has a metal content of not more than 50 ppm and is obtained by that method.

Abstract: A composition and method for making a fluoroelastomer is disclosed. The composition comprises a fluoroelastomer containing chlorine and an organic compound containing at least an hydride function. The hydride function has the formula MH where M is Si, Ge, Sn or Pb.

Abstract: An ion exchange polymer dispersion having an ion exchange polymer having sulfonic acid groups and a fibrilliform fluorocarbon polymer dispersed in a dispersion medium.

Abstract: Functional fluoro-monomers are polymerized with an organoborane initiator to yield functional fluoro-polymers and copolymers including functional polymers prepared from monomers having allylic protons, Si—H groups, and olefinic groups.

Abstract: Provided is a composition comprising an aromatic material selected from a polythiol aromatic compound or resin, a hydroxythiophenol compound or resin, a catechol novolak resin, a catechol cresol novolak resin, a polyhydroxy aromatic resin or compound comprising at least one aromatic ring having at least one hydroxyl group attached directly to the aromatic ring wherein at least one hydroxyl group is a phenolate salt, or a combination thereof, and a salt former compound capable of forming a salt with the aromatic material, a fluoropolymer, and optionally a phase transfer catalyst. Also provided are articles comprising powder-coated fluoropolymers with aromatic compounds, and methods for making the compositions and articles.

Abstract: There is provided a novel fluorine-containing polymer having an acid-reactive group which has a high transparency against energy rays (radioactive rays) in a vacuum ultraviolet region (157 nm), and further there are provided a material for fluorine-containing base polymer prepared from the polymer and suitable for a photoresist and a chemically amplifying type resist composition obtained therefrom. The polymer has a number average molecular weight of from 1,000 to 1,000,000 and represented by the formula: —(M1)—(M2)—(A)—, wherein M1 is a structural unit having an acid-labile or acid-degradable functional group, M2 is a structural unit of fluorine-containing acryl ester, A is a structural unit derived from other copolymerizable monomer, the percent by mole ratio M1/M2 is 1 to 99/99 to 1 and the polymer comprises from 1 to 99% by mole of the structural unit M1, from 1 to 99% by mole of the structural unit M2 and from 0 to 98% by mole of the structural unit A1.

Abstract: Fluorinated polymers, photoresists and associated processes for microlithography are described. These polymers and photoresists are comprised of esters derived from fluoroalcohol functional groups that simultaneously impart high ultraviolet (UV) transparency and developability in basic media to these materials. The materials of this invention have high UV transparency, particularly at short wavelengths, e.g., 157 nm, which makes them highly useful for lithography at these short wavelengths.

Abstract: Polymers comprising recurring units of cycloolefin having fluorinated alkyl introduced therein are novel and have transparency and alkali solubility. Using the polymers, resist compositions featuring low absorption of F2 excimer laser light are obtained.

Abstract: There is disclosed a composition comprising a mixture of endo- and exo-2-(bicyclo[2.2.1]hept-5-en-2-yl)-2,2-fluoroalkyl-ethan-2-ol which is rich in the exo isomer, preferably the endo/exo concentration ratio is no greater than 5/95. The composition is useful for forming a repeat unit of a polymer which polymer may further comprise additional repeat units derived-from tert-butyl acrylate, hydroxyadamantyl acrylate, protected or unprotected fluorinated-olefins, 2-methyl-2-adamantyl acrylate, 2-propenoic acid, 2-hydroxy-1,1,2-trimethylpropyl ester. Polymers of this invention are useful as the binder component of a photoresist composition for microlithography.

Abstract: An epoxy resin composition suitable for forming a film of excellent water repellency which comprises an epoxy resin having one or more water repellent groups and two or more cyclic aliphatic epoxy groups per molecule, a triazine-base catalyst for cationic polymerization and a non-polar solvent.

Abstract: A resist composition comprising a blend of a polymer comprising recurring units k and m of formula (1) wherein R1 and R2 each are hydrogen or an acid labile group, 0<k<1, 0<m<1 and 0<k+m?1, and another polymer comprising recurring units having carboxyl groups whose hydrogen atoms are replaced by acid labile groups as a base resin forms a resist film which is improved in transparency, alkali dissolution contrast and plasma etching resistance.

Abstract: The present invention is based on quad-fluoropolymer suitable for the preparation of a fluoroelastomer. The fluoropolymer comprises repeating units derived from 10 to 40 mol % of tetrafluoroethylene, 40 to 65 mol % of vinylidene fluoride, 1 to 30 mol % of a perfluorinated vinyl ether of the formula CF2?CFOCF2CF2CF2OCF3, 1 to 20 mol % of perfluoromethyl vinylether.

Abstract: A copolymer of an acrylic monomer having at least one C6-20 alicyclic structure with a norbornene derivative or styrene monomer having a hexafluoroalcohol pendant is highly transparent to VUV radiation and resistant to plasma etching. A resist composition using the polymer as a base resin is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, transparency and dry etching resistance, and is suited for lithographic microprocessing.

Abstract: An ionomer and a process for forming the ionomer such that the ionomer has (1) low equivalent weight; below 950, preferably between 625 and 850, and most preferably between about 700 and about 800; and (2) high conductivity, (greater than 0.15 S/cm). In an alternative embodiment, the ionomer has (1) low equivalent weight; below 950, preferably between 625 and 850, and most preferably between about 700 and about 800; and (2) acceptably low hydration, (less than about 75 weight percent). These ionomers are adapted to be processed into thin films that have acceptable physical stability. They are thus extremely well-suited for low humidity or high temperature fuel cell applications.

Abstract: In an aspect of the invention, a fluoropolymer dispersion, preferably a PTFE dispersion, is provided that comprises fluoropolymer particles having an average particle size of 10 to 400 nm dispersed in water whereby the dispersion has an amount of solids between 35 and 70% by weight. The dispersion is free of fluorinated surfactant having a molecular weight of less than 1000 g/mol (hereinafter called low molecular weight fluorinated surfactant) or contains the low molecular weight fluorinated surfactant in an amount of not more than 0.05% by weight based on the total weight solids of the dispersion. The dispersion further comprises a non-ionic non-fluorinated surfactant or mixture of non-ionic non-fluorinated surfactants and one or more non-fluorinated anionic surfactants. Through the use of a non-fluorinated anionic surfactant, a dispersion is obtained that has a low viscosity at room temperature (20° C.).

Abstract: Photoresist monomers, photoresist polymers prepared thereof, and photoresist compositions using the polymer are disclosed. More specifically, photoresist polymers comprising maleimide monomer represented by Formula 1, and a composition comprising the polymer thereof are disclosed. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness, and can be developed in an aqueous tetramethylammonium hydroxide (TMAH) solution. As the composition has low light absorbance at 193 nm and 157 nm wavelength, and it is suitable for a process using ultraviolet light source such as VUV (157 nm) wherein, X1, X2, R1, R2 and R3 are defined in the specification.

Abstract: Ionic perfluorovinyl compounds and their uses as components of ionic conductors of the polymer type, of selective membranes or of catalysts. The compounds comprise at least one perfluorovinyl group and at least one group chosen from —O or one of the groups C?N, —C(C?N)2, —NSO2R or —C[SO2R]2 or a pentacyclic group comprising at least one N, C—C?N, CR, CCOR or CSO2R group. The compounds and/or their polymers are of use in the preparation of ionically conducting materials, electrolytes and selective membranes.

Abstract: A multi-layer hose having a multi-layer structure comprising an inner layer (I) made of a fluorocopolymer and an outer layer (II) made of a polyamide resin, wherein the fluorocopolymer constituting the inner layer (I) is a fluorocopolymer which comprises polymerized units (a) based on tetrafluoroethylene, polymerized units (b) based on ethylene and polymerized units (c) based on itaconic anhydride and/or citraconic anhydride, wherein the molar ratio of (a)/(b) is from 20/80 to 80/20 and the molar ratio of (c)/((a)+(b)) is from 1/10,000 to 5/100 and which has a volume flow rate of from 1 to 1,000 mm3/sec., and the polyamide resin constituting the outer layer (II) is polyamide 11 and/or polyamide 12, which satisfies a condition of (terminal amino group concentration)/(terminal carboxyl group concentration)>1.

Abstract: Photoresists and associated processes for microlithography in the extreme, far, and near UV are disclosed. The photoresists in some embodiments comprise (a) a fluorine-containing copolymer derived from at least one polycyclic ethylenically unsaturated compound and at least one compound having at least one fluorine atom covalently attached to an ethylenically unsaturated carbon atom; and (b) at least one photoactive component. In other embodiments, the photoresists comprise a fluorine-containing copolymer derived from at least one polycyclic ethylenically unsaturated compound having at least one atom or group covalently attached to a carbon atom contained within a ring structure and separated from each ethylenically unsaturated carbon atom of the ethylenically unsaturated compound by at least one covalently attached carbon atom, wherein the atom or group is selected from the group consisting of fluorine perfluoroalkyl and perfluoroalkoxy.

Abstract: Photoresist monomers of following Formula 1, photoresist polymers thereof, and photoresist compositions containing the same. The photoresist polymers include a repeating unit comprising the photoresist monomer of Formula 1 as a comonomer and the photoresist compositions containing the same have excellent etching resistance, heat resistance and adhesiveness to a wafer, and are developable in aqueous tetramethylammonium hydroxide (TMAH) solutions. In addition, the photoresist compositions have a low light absorbance at 157 nm wavelength, and thus are suitable for a photolithography process using ultraviolet light sources such as VUV (157 nm) in fabricating a minute circuit for a high integration semiconductor device. wherein Y1, Y2, Y3, Y4, Y5, Y6, Z1, Z2 and m are defined in the specification.

Abstract: Fluoroelastomeric compositions comprising: A) a fluoroelastomeric matrix; B) a semi-crystalline fluoropolymer, in an amount from higher than 40% to 90% by weight based on the total of A)+B); the fluoroelastomer A) incorporates the fluoropolymer B), the fluoropolymer B) being formed by tetrafluoroethylene (TFE) homopolymers, or by TFE by copolymers with one or more monomers containing at least one unsaturation of ethylene type, the average sizes of the semi-crystalline fluoropolymer particles being from 10 to 100 nm, preferably from 10 to 60 nm.

Abstract: A photosensitive polymer comprises a fluorinated ethylene glycol group and a chemically amplified resist composition including the photosensitive polymer. The photosensitive polymer has a weight average molecular weight of about 3,000-50,000 having a repeating unit as follows: wherein R1 is a hydrogen atom or methyl group, and R2 is a fluorinated ethylene glycol group having 3 to 10 carbon atoms.

Abstract: Halogenated polymers are prepared by a process comprising polymerizing at least one halogen-containing monomer in an aqueous medium containing monomer, radical initiator, and siloxane surfactant. The medium may optionally contain one or more of an antifoulant, a buffering agent and a chain-transfer agent.

Abstract: New precursors and processes to generate fluorinated poly(para-xylylenes) (“PPX”) and their chemically modified films suitable for fabrications of integrated circuits (“ICs”) of <0.15 &mgr;m are disclosed. The films so prepared have low dielectric constants (“∈”) and are able to keep the integrity of the dielectric, Cu, and the barrier metal, such as Ta. Hence, the reliability of ICs can be assured.

Abstract: A fuser member comprising a core and a layer overlying the core, the layer including a cured fluorocarbon random copolymer having subunits of: —CH2CF2)x—, —(CF2CF(CF3)y—, or —(CF2CF2)z—, wherein x is from 30 to 90 mole percent, y is from 10 to 70 mole percent, z is from 0 to 34 mole percent; and x+y+z equals 100 mole percent; the layer further including particulate filler having zinc oxide and yellow iron oxide.

Abstract: A fluorosulfonyl group-containing compound having a high polymerization reactivity, a process for its production, a sulfonyl group-containing polymerizable monomer led from the sulfonyl group-containing compound, and a polymer obtainable by polymerizing the sulfonyl group-containing polymerizable monomer, are provided.

Abstract: Amorphous perfluorinated homopolymers and copolymers of perfluorodioxoles of formula (IA): 1

Abstract: A method for encoding a polymer. The method comprises incorporating, into a polymer formed by polymerizing at least one bulk monomer, from 0.1 ppm to 1% each of at least two additional monomer residues.

Abstract: Fluorinated vinyl ethers are provided having the structure of formula (I) the structure of formula (I) 1

Abstract: Amorphous perfluorinated copolymers, comprising cyclic perfluorinated units deriving from at least two different perfluorinated comonomers, optionally with units deriving from a perfluorinated monomer containing at least one olefinic unsaturation (perfluoroolefin), or comprising cyclic perfluorinated units and units deriving from a perfluorinated monomer containing at least one olefinic unsaturation, said perfluorinated copolymers having the following combination of properties: substantial absence of unstable polar end groups, polymer Tg higher than 120° C., narrow monomeric composition distribution.

Abstract: A golf ball comprising a core, a cover, and an intermediate layer disposed between the core and the cover, wherein the intermediate layer comprises a non-ionomeric fluoropolymer having a formula: 1

Abstract: Photoresist monomers of following Formula 1, photoresist polymers thereof, and photoresist compositions containing the same. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness to a wafer, and is developable in aqueous tetramethylammonium hydroxide (TMAH) solution. In addition, the photoresist composition has low light absorbance at 157 nm wavelength, and thus is suitable for a photolithography process using ultraviolet light sources such as VUV (157 nm) in fabricating a minute circuit for a high integration semiconductor device. wherein, X1, X2, Y1, Y2, Y3, Y4, Y5, Y6, Y7, Y8, l and m are as defined in the specification of the invention.