Power semiconductor device
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Description
The broken lines in
Claims
The ornamental design for a power semiconductor device, as shown and described.
Referenced Cited
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Patent History
Patent number: D798832
Type: Grant
Filed: Mar 18, 2016
Date of Patent: Oct 3, 2017
Assignee: Mitsubishi Electric Corporation (Tokyo)
Inventors: Yukimasa Hayashida (Tokyo), Shinichi Iura (Tokyo), Hitoshi Uemura (Tokyo), Daisuke Oya (Tokyo), Kenji Hatori (Tokyo), Yasuhiro Sakai (Tokyo), Ryo Tsuda (Tokyo), Ryutaro Date (Tokyo)
Primary Examiner: Elizabeth J Oswecki
Application Number: 29/558,572
Type: Grant
Filed: Mar 18, 2016
Date of Patent: Oct 3, 2017
Assignee: Mitsubishi Electric Corporation (Tokyo)
Inventors: Yukimasa Hayashida (Tokyo), Shinichi Iura (Tokyo), Hitoshi Uemura (Tokyo), Daisuke Oya (Tokyo), Kenji Hatori (Tokyo), Yasuhiro Sakai (Tokyo), Ryo Tsuda (Tokyo), Ryutaro Date (Tokyo)
Primary Examiner: Elizabeth J Oswecki
Application Number: 29/558,572
Classifications
Current U.S. Class:
Semiconductor, Transistor Or Integrated Circuit (24) (D13/182)