Semiconductor wafer

- HAMAMATSU PHOTONICS K.K.
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Description

1.-2. Semiconductor wafer

1.1 : Front view

1.2 : Rear view

1.3 : Top plan view

1.4 : Bottom view

1.5 : Right side view

1.6 : Left side view

1.7 : Enlarged view showing a portion of Reproduction 1.2 defined by lines 1.7-1.7 and 1.7′-1.7

1.8 : Enlarged view showing a portion of Reproduction 1.7 defined by lines 1.8-1.8 and 1.8′-1.8

1.9 : Enlarged view showing a portion of Reproduction 1.7 defined by lines 1.9-1.9 and 1.9′-1.9

1.10 : Enlarged view showing a portion of Reproduction 1.7 defined by lines 1.10-1.10 and 1.10′-1.10

1.11 : Enlarged cross-sectional view along line 1.11 of Reproduction 1.8

1.12 : Enlarged cross-sectional view along line 1.12 of Reproduction 1.9

1.13 : Enlarged cross-sectional view along line 1.13 of Reproduction 1.10

2.1 : Front view

2.2 : Rear view

2.3 : Top plan view

2.4 : Bottom view

2.5 : Right side view

2.6 : Left side view

2.7 : Enlarged view showing a portion of Reproduction 2.2 defined by lines 2.7-2.7 and 2.7′-2.7

2.8 : Enlarged view showing a portion of Reproduction 2.7 defined by lines 2.8-2.8 and 2.8′-2.8

2.9 : Enlarged view showing a portion of Reproduction 2.7 defined by lines 2.9-2.9 and 2.9′-2.9

2.10 : Enlarged view showing a portion of Reproduction 2.7 defined by lines 2.10-2.10 and 2.10′-2.10

2.11: Enlarged cross-sectional view along line 2.11 of Reproduction 2.8

2.12 : Enlarged cross-sectional view along line 2.12 of Reproduction 2.9

2.13 : Enlarged cross-sectional view along line 2.13 of Reproduction 2.10

1.-2. Designs 1 and 2: each article is a wafer used in the production of photodetectors, or the like; the parts shown in solid lines are parts for which design registration is sought; design 1: reproduction 1.7 is an enlarged view of upper left part of reproduction 1.2; reproduction 1.8 is an enlarged view of upper left part of reproduction 1.7; reproduction 1.9 is an enlarged view of bottom left part of reproduction 1.7; reproduction 1.10 is an enlarged view of upper right part of reproduction 1.7; reproduction 1.11 is an enlarged cross-sectional view in the vertical direction of reproduction 1.8; reproduction 1.12 is an enlarged cross-sectional view in the vertical direction of reproduction 1.9; reproduction 1.13 is an enlarged cross-sectional view in the horizontal direction of reproduction 1.10; design 2: reproduction 2.7 is an enlarged view of upper left part of reproduction 2.2; reproduction of 2.8 is an enlarged view of upper left part of reproduction 2.7; reproduction 2.9 is an enlarged view of bottom left part of reproduction 2.7; reproduction 2.10 is an enlarged view of upper right part of reproduction 2.7; reproduction 2.11 is an enlarged cross-sectional view in the vertical direction of reproduction 2.8; reproduction 2.12 is an enlarged cross-sectional view in the vertical direction of reproduction 2.9; reproduction 2.13 is an enlarged cross-sectional view in the horizontal direction of reproduction 2.10. In the drawings, the dash-dot-dash broken lines are for the purpose of illustrating the boundaries of the claimed design and form no part of the claimed design. The evenly spaced broken lines are for the purpose of showing portions of the semiconductor wafer and form no part of the claimed design.

Claims

The ornamental design for a semiconductor wafer, as shown and described.

Referenced Cited
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Patent History
Patent number: D897974
Type: Grant
Filed: Sep 5, 2018
Date of Patent: Oct 6, 2020
Assignee: HAMAMATSU PHOTONICS K.K. (Hamamatsu-shi, Shizuoka)
Inventors: Tomoya Taguchi (Hamamatsu), Takeshi Sakamoto (Shizuoka)
Primary Examiner: Rhea Shields
Application Number: 35/506,381