Abstract: A film forming/modifying system includes a film forming apparatus which has an alcohol supply unit and forms a metal oxide film on a semiconductor wafer in a vacuum atmosphere in which a vaporized metal oxide film material and a vaporized alcohol exist, a film modifying apparatus which has a UV irradiation unit for irradiating a UV ray on ozone to generate active oxygen atoms, and modifies the metal oxide film by exposing the metal oxide film to the active oxygen atoms in a vacuum atmosphere, and a common transfer chamber commonly coupled to the film forming apparatus and the film modifying apparatus to transfer the target process object between the film forming apparatus and the film modifying apparatus while maintaining the vacuum state.

Abstract: Relatively cool chemical vapor deposition precursor particles are desorbed from a target by increasing the temperature of a selected target area at a heating rate of at least about 10.sup.6 K/sec such that heat energy causes the desorption of at least one CVD precursor particle intact from the target, such that intermediate bonds between the precursor particles and adjacent particles are heated at a higher rate than the precursor's internal bonds, or such that a substantial portion of heat energy is not transferred to the internal modes of the CVD precursor particle.

Abstract: Cr(CO).sub.6 gas is fed into a chamber, in which a photomask substrate having any clear deflect resulting from partial loss of a light-shielding film to fill the inside of the chamber with a Cr(CO).sub.6 gas atmosphere. By irradiating with a laser beam the clear defect of the photomask substrate in the Cr(CO).sub.6 gas atmosphere, the Cr(CO).sub.6 gas is decomposed to form a Cr film over the clear defect. Tetrakis dimethylamino titanium gas (TDMAT) is fed into the chamber to switch the atmosphere in the chamber to a TDMAT gas atmosphere. By irradiating with a laser beam the area of the photomask substrate, arranged in the TDMAT gas atmosphere, where the Cr film has been formed, the TDMAT gas is decomposed to form a TiN film, whose reflectance is smaller than that of the Cr film, over the Cr film.

Abstract: A closed loop, carbon monoxide self-contained preferably continuous process and apparatus for the production of nickel or nickel coated objects by nickel vapor deposition (NVD), comprising placing an object to be treated with nickel carbonyl in a deposition chamber; feeding a gaseous mixture of nickel carbonyl and carbon monoxide to the chamber; producing the nickel or nickel coated object and a nickel carbonyl-depleted gaseous mixture; removing nickel carbonyl from the nickel carbonyl-depleted gaseous mixture in a primary and subsequent secondary condensation unit and, preferably, a tertiary condensation unit to produce an essentially nickel carbonyl-free gas. The secondary and tertiary condensation units operably freeze out and subsequently thaw nickel carbonyl and most preferably each comprises a pair of units linked in parallel arrangement operative in alternating, alternate freeze-thaw modes. Carbon monoxide-containing gas is recycled to a nickel carbonyl reactor.

Abstract: The use of a gas injector including a dielectric material around the ports has an advantage when used with plasma enhanced chemical vapor deposition in that a plasma torch will not be formed at the gas injector and the gases will not dissociate prematurely. This adds to the quality of the coatings and allows the system to be used at higher amperage and thus improved line speeds. The use of a dielectric plug at the ports allows the ports to be easily serviced and replaced.

Abstract: The present invention provides a CVD apparatus and a CVD method for use in forming an Al/Cu multilayered film. The Al/Cu multilayered film is formed in the CVD apparatus comprising a chamber for placing a semiconductor wafer W, a susceptor for mounting the semiconductor wafer W thereon, an Al raw material supply system for introducing a gasified Al raw material into the chamber and a Cu raw material supply system for introducing a gasified Cu raw material into the chamber. The Al/Cu multilayered film is formed by repeating a series of steps consisting of introducing the Al raw material gas into the chamber, depositing the Al film on the semiconductor wafer W by a CVD method, followed by generating a plasma in the chamber in which the Cu raw material gas has been introduced and depositing the Cu film on the semiconductor wafer W by a CVD method. The Al/Cu multilayered film thus obtained is subjected to a heating treatment (annealing), thereby forming a desired Al/Cu multilayered film.

Abstract: Powdery Cr(CO).sub.6 is stored in a reservoir, into which Ar gas, under flow rate control by a flow rate controller, is introduced. On the other hand, He gas, whose molecular weight differs from that of Ar gas, is also introduced into the reservoir under flow rate control by another flow rate controller. These Ar and He gases are used as carrier gases for feeding a reactive gas into a chamber. The reservoir sublimates the powdery Cr(CO).sub.6 stored therein. The Cr(CO).sub.6 obtained by sublimation is carried by the Ar and He gases which are introduced into the reservoir, and supplied onto a substrate in the chamber. The substrate is irradiated with a laser beam. This irradiation with the laser beam decomposes the Cr(CO).sub.6 gas to form a film of metallic chromium on the substrate.

Abstract: A base plater or a vacuum deposition apparatus 24 having individually and selectively controlled work holders 10 and a capactively coupled crystal monitor 26. A flipping control mechanism 31 individually and selectively controls flipping of each of the work holders 10 by selectively engaging a flip lever 32 to a flip gear 14 of each work holder 10. The flipping control mechanism 31 allows individual and selective rotation of the work holders 10 to plating and non-plating positions for particular plating processes or runs. Rings 28, 36, 40, and 42 are used to provide a generally open central area 60 that is generally free from obstructions that may adversely affect the plating process and/or the surface or components of the base plater apparatus 24. A crystal monitor 26 is mounted to rotational ring 28 which is in the same rotational plane and periphery of the work holders 10.

Abstract: A high temperature vapor coating container, including a hollow interior, resists distortion and cracking at a vapor coating temperature of at least about 1700.degree. F. as a result of making the container of a nonmetallic material having a coefficient of thermal expansion of less than about 4.5.times.10.sup.-6 at the vapor coating temperature, the material being nonreactive with the coating vapor at the vapor coating temperature.

Abstract: Disclosed is a method and apparatus for facilitating the decomposition of organometallic compounds such as TEOS in chemical vapor deposition reactors in order to form deposition films. The method generally includes: (1) introducing an organometallic compound and ozone molecules to a chemical vapor deposition reactor; (2) directing ultraviolet radiation into the chemical vapor deposition reactor to increase the rate at which oxygen atoms are formed from the ozone molecules present in the chemical vapor deposition reactor; and (3) decomposing the organometallic compound to form a deposition layer. The organometallic compound decomposes at an accelerated rate due in part to an increased amount of hydroxyl radicals present in the chemical vapor deposition reactor.

Abstract: The invented apparatus is a relatively small-volumed chamber useful for processing a substrate. The apparatus includes a reference member with a substantially flat surface. The apparatus also includes a stage member with a surface that supports the substrate, and that has a gas bearing surrounding this support surface. Gas flows through the bearing are regulated to generate a seal of the substrate from ambient gases upon bringing the gas bearing close to the reference member's flat surface. The seal generated by the gas bearing can also be used to contain process gas in proximity to the substrate. Such process gas can be introduced into and exhausted from the chamber through an inlet and outlet, respectively, defined in the reference member. The apparatus can include a window fixed in the reference member. Patterned light or a particle beam can be directed through the window to the contained substrate to cause selective reactions to occur thereon.

Abstract: The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 .ANG./minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for bottom powered RF capability allows PECVD deposition at a temperature of at least 400.degree. C. for more efficient plasma treatment. A thermal choke isolates the heater from its support shaft, reducing the thermal gradient across the heater to reduce the risk of breakage and improving temperature uniformity of the heater. A deposition system incorporates a flow restrictor ring and other features that allow a 15 liters/minute flow rate through the chamber with minimal backside deposition and minimized deposition on the bottom of the chamber, thereby reducing the frequency of chamber cleanings, and reducing clean time and seasoning. Deposition and clean processes are also further embodiments of the present invention.

Abstract: An installation for fabricating an optical fiber preform includes a reaction tube and an excess silica soot exhaust tube equipped internally with a screw having flat helical threads for removing the excess soot. The screw is a helix hollowed out longitudinally and the installation includes a cylinder housed within the interior passage of the helix, eccentrically disposed within this passage and bearing against the inside surface of the helix. The cylinder is rotated about its axis.

Abstract: An apparatus for processing substrates that includes a processing chamber having an interior surface at least partially coated with a carbon-based coating. The carbon-based coating protects the interior of the chamber from etching gases and other reactants used during substrate processing. The coating also resists accumulation of residues, does not generate particulates and seals in impurities residing in the coated materials. In preferred embodiments the carbon-based coating is either diamond or a diamond-like carbon (DLC) coating. Also described is a process for protecting a processing chamber's interior surface from the reactants used in substrate processing by coating at least portions of the surface with such a carbon-based coating.

Abstract: A processing system includes a processing chamber, a circulating device for purifying an inside ambience gas of the processing chamber and for circulating the purified gas back into the processing chamber, a measuring device for measuring the purity of the ambience gas, and an adjusting device for adjusting the purification capacity of the purifying device in accordance with an output of the measuring device. In another form, a processing system includes a first processing chamber in which a first process is to be performed therein, a second processing chamber in which a second process is to be performed therein, and a device for introducing an ambience gas, having been used in said first processing chamber for the first process, into the second chamber for reuse thereof. The gas subsequently used in the second chamber is introduced back into the first chamber for reuse of the gas. At least a portion of the circulated gas is purified to improve its purity.

Abstract: The present invention has been achieved by perceiving the fact to the effect that a semiconductor production process-like manner such as CVD method or the like by which materials and film thickness can be controlled in an atomic scale may be utilized in case of preparing thin-film crystal, and employing such semiconductor production process-like manner being quite different from conventional technique.

Abstract: A photo-chemical vapor deposition ("photo-CVD") apparatus has exchange apparatus of optical window and method of exchanging optical window therewith. There photo-CVD apparatus has exchange apparatus of optical window which can replace an optical window blurred by attachment of materials produced by dissociation of reaction gas or materials used for disposition in a reaction chamber of a photo-CVD apparatus during photo-CVD reaction with a clean optical window without exposing the inside of the reaction chamber to the air and to the method of exchanging optical window of the photo-CVD apparatus using the exchange apparatus of optical window.

Abstract: A process for forming a deposited film on a substrate according to the chemical vapor deposition method comprises previously forming excited species of a gas phase compound containing atoms which become constituents constituting said deposited film, supplying the excited species onto the surface of said substrate and effecting photoirradiation on said substrate surface, thereby forming the deposited film through the surface reaction.

Abstract: A method for chemical vapor deposition onto high aspect ratio features. Process gases including a reactant species are supplied to the surface and sufficient primary energy is supplied to the surface so as to cause the reactant species to deposit on the surface. Additional energy is supplied, preferably in the form of optical energy, that is tuned to be captured by the patterned features so as to slow the deposition rate preferentially on the patterned features.

Abstract: A process for forming a deposited film on a substrate according to the chemical vapor deposition method comprises previously forming excited species of a gas phase compound containing atoms which become constituents constituting said deposited film, supplying the excited species onto the surface of said substrate and effecting photoirradiation on said substrate surface, thereby forming the deposited film through the surface reaction.

Abstract: An apparatus and process are disclosed for depositing a barrier layer, such as an SiOx barrier layer, onto a moving web of substrate material in a continuous process at atmospheric pressure using a gaseous phase precursor and an oxidizer.

Abstract: In a pulsed laser deposition system, the two optical actions of focusing rastering, and the optical chamber window are combined into a single optics system. The single optics system is mounted on the processing chamber. Combining the three separate optical functions into one optics system facilitates laser beam control and reduces the space needed for the apparatus.

Abstract: For the manufacturing using an LCVD process of a rod-shaped, three-dimensional structure extending into three dimensions, two laser beams (12, 13) are focused on a common focal point (12a) in a gaseous or liquid medium containing a compound which produces the structure material when decompounded by the laser beams. In this way, structures which extend three-dimensionally may also be made from minimally absorbent materials which are essentially transparent. This additionally allows for good control of the direction of the growth of the structure.

Abstract: For providing a doped semiconductor film having a uniform thickness and a uniform impurity concentration on a semiconductor substrate, both a raw gas such as silane and an impurity gas such as phosphine are prepared. Thereafter, the raw gas is introduced into a reaction chamber, while a decomposed impurity gas, that is obtained by means for decomposing the impurity gas, is introduced into the reaction chamber, thereby depositing a doped semiconductor film such as a polysilicon film on the semiconductor substrate. A sub-reaction chamber, a plasma discharge device and a light source are used as the means for decomposing the impurity gas.

Abstract: A photo-excited processing apparatus includes a reaction chamber to be filled with reaction gas, photo-excitation means for irradiating a light beam from light source means through a light transmissive window formed in the reaction chamber to excite the raw gas, and multi-holed transparent diffusion means arranged between the light transmissive window of the reaction chamber and a substrate to be mounted in the reaction chamber. The multi-holed transparent diffusion means has a diffusion plane on at least one surface thereof having a plurality of holes formed therein and being transparent to the light beam.

Abstract: An apparatus for forming a film by the CVD method allows reaction products to be easily removed from a gas discharge surface without decreasing the uptime/downtime ratio, and includes a gas distributor having a gas discharge surface for discharge of a reaction gas for forming a film on a substrate. A wafer holder has a wafer mounting surface facing the gas discharge surface. A cleaner has a suction head and a brush formed at the entrance of the suction head. A rotary shaft supports the cleaner for movement between the gas discharge surface and a stand-by position and brings the brush of the cleaner onto the gas discharge surface. A vertical positioner moves the wafer holder or gas distributor upward or downward, whereby the wafer holder approaches the gas discharge surface for forming a film and is spaced from the gas discharge surface when cleaning the gas discharge surface by movement of the cleaner on the gas discharge surface.

Abstract: A process for forming a deposited film on a substrate including generating a plasma in a plasma generating chamber via a light transmissive perforated diffusion plate which is located adjacent to a reaction chamber containing the substrate. The plasma thereby excites a gas, which is introduced into the reaction chamber through the light-transmissive perforated diffusion plate. A gaseous starting material for forming the deposited film is introduced into the reaction chamber and reacts with the excited gas. A deposited film is formed on the substrate while irradiating the substrate with a light scattered by the light-transmissive perforated diffusion plate.

Abstract: An electrostatic decontamination method and decontamination device (10) is disclosed for decontaminating the surface of a semiconductor substrate. The decontamination device (10) includes particle ionizing device (24) that charges contaminating particles (26) on the surface of semiconductor substrate (16) thereby creating ionized particles. Decontamination device (10) also includes substrate biasing device (12) for creating a charge accumulation layer (14) at the top of semiconductor substrate (16) so that the charge accumulation layer (14) has the same charge sign as the ionized particles. In addition, the invention analytically characterizes particles using contaminating particle isolator (44) which contains a particle ionizing device (24) that charges contaminating particles (26) on the surface of semiconductor substrate (16) thereby creating ionized particles.

Abstract: Chemical vapor deposition apparatus is provided for the quick and efficient deposition of Parylene AF4 onto silicon wafers in the production of semiconductor chips. The apparatus includes a post-pyrolysis chamber maintained at a predetermined temperature for capturing unpyrolyzed dimer before entry into the deposition chamber, and a filter structure positioned at the deposition chamber inlet to filter out microscopic particles and impurities prior to deposition onto the wafer surface. The post-pyrolysis chamber includes baffles for capturing the unpyrolyzed dimer, and the filter material preferably comprises PTFE. The filter element is heated to prevent deposition onto the filter.

Abstract: A plasma CVD apparatus comprises a housing for defining a reaction chamber, a semiconductor wafer holder and lower electrode located within the housing and configured to hold and support a semiconductor wafer thereon. The semiconductor wafer holder and lower electrode is connected to a common ground terminal. An upper electrode is located within the housing and connected to a radio frequency voltage supply. The an upper electrode is positioned separately from but opposite to the semiconductor wafer holder and lower electrode, so that the radio frequency voltage causes a plasma region on a deposition surface of the semiconductor wafer held by semiconductor wafer holder and lower electrode. An ultraviolet lamp is located to irradiate an ultraviolet ray on the deposition surface of the semiconductor wafer held by the semiconductor wafer holder and lower electrode.

Abstract: Disclosed are a processes and reactors for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications by the deposition of silicon from a gas containing a silane compound. The equipment includes a reactor vessel which encloses a powder catcher having a cooled surface. Also within the vessel is a cylindrical water jacket which defines multiple reaction chambers. The silicon powder generated in this process adheres to the coolest surfaces, which are those of the powder catcher, and is thereby collected. Little of the powder adheres to the walls of the reaction chambers. In some embodiments, a fan can be provided to increase gas circulation.

Abstract: An IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for connecting a conductive line of a lower wiring plane of a multilayer IC chip to a conductive line formed at a separate position on the same multilayer IC chip. The insulating film or films covering conductive lines to be interconnected are processed by an energy beam such as a concentrated ion beam to form holes so as to expose the respective parts of the conductive lines where the conductive lines are to be interconnected, then a metal is deposited over the surfaces of the holes and an area interconnecting the holes by irradiating the surfaces of the holes and the area by an energy beam or a concentrated ion beam in an atmosphere of a gaseous organic metal compound to form a conductive metal film electrically interconnecting the conductive lines.

Abstract: An apparatus for processing a substrate surface in a process chamber wherein during chemical or physical altering of the substrate surface a laser beam is projected inside the processing chamber and along a trajectory which does not contact the substrate surface in order to capture particles by means of the photophoretic effect, particles which would otherwise impinge upon and contaminate the substrate surface.

Abstract: A chemical vapor deposition (CVD) apparatus comprises a reactor having a coating chamber at elevated temperature, means for supporting substrates to be coated at different zones in the coating chamber, and means for supplying a gaseous reactant stream to the chamber for distribution to the coating zones in a manner that the stream is heated to substantially different temperatures at different coating zones. Reactivity-altering material is disposed at the coating zones for contact by the reactant stream supplied thereto before the reactant stream contacts a substrate at the zones. The reactivity-altering material includes a composition that differs between coating zones in dependence on the reactant stream temperatures at the coating zones as necessary to alter the reactivity of the reactant (i.e., activity of a particular chemical specie of the reactant stream) stream at the coating zones in a manner to provide substantially the same reactant reactivity at all coating zones.

Abstract: This invention directs itself to a pulsed laser passive filter deposition system (10) which provides a blocking and transparent mask mechanism (34) placed between a target (14) and a substrate (12) to be coated. The blocking and transparent mask mechanism (34) includes a blocking member (36) which casts a blocking shadow having a greater cross-sectional area than the substrate (12), to block linearly travelling clustered species particulates (22) from impinging on the substrate (12). The blocking and transparent mask mechanism (34) also includes annularly shaped disk members (38 and 44) having openings (40 and 46) formed in a central portion to allow passage of the atomic species (20) of the composition being coated on the substrate (12) where the atomic species (20) is deflected by impingement with background gas molecules (26). In this manner, the substrate (12) is coated with the atomic species (20) in a uniform coating without having the clustered species (22) being coated on the substrate (12).

Abstract: A thin film is formed on a substrate in a reaction chamber using a photo CVD technique by decomposing a reactive gas supplied to the reaction chamber by means of light irradiated through a light introducing window. The reduction in film deposition rate due to clouding of the light introducing window is corrected in order to form a thin film of a desired film thickness.

Abstract: A deposited film-forming apparatus comprises a reaction chamber, a supporting member provided in the reaction chamber for holding a substrate, a plasma generating chamber adjacent to the reaction chamber with interposition of a light-transmissive perforated diffusion plate wherein at least a part of the plasma generating chamber is made of a light-transmissive member, a plasma-generation means for generating plasma in the plasma generating chamber, a first gas-introduction means for introducing a gas into the reaction chamber, a second gas-introduction means for introducing another gas into the plasma generating chamber, an evacuation means for evacuating the reaction chamber and the plasma generating chamber, and a light source provided outside the plasma generating chamber for irradiating light to the substrate held on the supporting member through the plasma generating chamber and the perforated diffusion plate, wherein the perforated diffusion plate has a light-scattering diffusion face at least at the si

Abstract: An apparatus for forming a II-VI Group compound thin film containing nitrogen as an impurity, on a substrate, comprises a container for holding a substrate, a vapor source for supplying Zn vapor on a surface of the substrate, a vapor source for supplying Se vapor on the surface of the substrate, and a discharge tube into which a nitrogen gas is introduced, having three-divided internal portions, a high-pressure portion, a middle-pressure portion, and a low-pressure portion from the gas introduction side, and supplying excitation species derived from discharge plasma generated in the low-pressure portion onto the surface of the substrate. Zn vapor and Se vapor are alternately supplied, and supply of nitrogen excitation species is performed in synchronous with supply of Zn vapor.

Abstract: Gas photonanograph for the production and optical analysis of nanometer scale patterns. The photonanograph has a gas expansion chamber equipped with a gas supply for producing patterns and provided at a first end with microcapillaries for the discharge of the gas, an optical fibre, which is sharp at a first end and which is to be positioned facing the sample to be treated, a light source coupled to the second end of the optical fibre, the latter being transparent to the light emitted by the light source, and detecting and processing apparatus for monitoring a light signal reflected by the sample. The photonanograph permits the localized etching or deposition of materials for microelectronics or microoptoelectronics.

Abstract: A treating device of the closed system structure in which semiconductor wafers are conveyed from a load lock chamber to a process tube comprises a gas feed pipe for feeding inert gas into a load lock chamber, and a gas circulating cleaning system which lets out the inert gas in the load lock chamber, removes gaseous impurity and particulate impurities in the let out gas by a gas cleaning filter, and returns the cleaned gas into the load lock chamber. Thus, ambient atmosphere of the inert gas in the load lock chamber can be maintained at high purity, a consumption amount of the inert gas can be small, which contributes to suppression of generation of particles and preclusion of chemical contamination. The treating device can have high achievement and can be economical.

Abstract: An atom collimator having a square configuration and a curved surface. Thanking for the square configuration, the collimator of this present is prevented from its location above a contact hole of a semiconductor substrate. Either of upper and lower surfaces of the collimator is curved to become a concavity or convexity with a radius of curvature. This collimator is not placed over a contact hole during deposition of a contact of a semiconductor device and has the curved surface with the radius of curvature, thus to cause the atoms to be received by the contact hole of a semiconductor substrate as vertically as possible and to improve the step coverage of the semiconductor device.

Abstract: A process for production of diamond-like films comprising the steps of physically ablating a source of carbon in the vicinity of a substrate such that a carbon film grows on the substrate through bonding of carbon atoms in graphitic form and aliphatic form; and physically discriminating the carbon film during growth thereof by supressing or etching the graphitic form within the carbon film while permitting the aliphatic form to remain thereby resulting in a diamond-like film.

Abstract: In a photo-CVD system, ultraviolet light is introduced into a reaction chamber from light emitting elements of ultraviolet light sources, through transparent bulb surfaces thereof, and through elongated light pipes in a sealed wall bounding the reaction chamber. This prevents molecules of reactant gas in the reaction chamber from reaching and being deposited on the transparent bulb surfaces, and thereby prevents buildup of such reactant molecules from occurring and impeding flow of ultraviolet light into the reaction chamber.

Abstract: An improved Faraday Cage is provided for use in reducing ion damage to semiconductor wafers during plasma etching. The improved Faraday Cage consists of a cylindrical metallic chamber having a cap at one or more ends. Semiconductor wafers are placed within the Cage and the Cage is suitably disposed within a plasma etcher. The caps substantially reduce the amount of harmful radiation which can enter the Cage and thereby ion damage to the wafers contained therein. The improved Faraday Cage can be conveniently integrated with a barrel-style plasma etcher by securing one of the Cage caps to the door of the plasma etcher such that opening and closing the door serves to disengage and engage one of the caps from the Cage.

Abstract: This invention relates to strontium titanate, hereinafter referred to as SrTiO.sub.3, films of the type produced by chemical vapor deposition (CVD) that are oriented so that the film's (100) face is parallel to the surface plane of the substrate. Such structures of this type, generally allow the SrTiO.sub.3 film to be deposited such that a high density capacitor or a buffer layer for a superconductor can be created.

Abstract: A semiconductor fabrication apparatus for forming a film on a wafer by a CVD method provides for easy removal of the dust generated in a film-forming chamber without reducing the uptime/downtime ratio of the equipment. The apparatus includes one or more gas dispersing devices having gas releasing surfaces for releasing a reaction gas to form a film on a wafer; one or more wafer holders having wafer mounting surfaces opposed to the plane defined by the gas releasing surface; and one or more cleaners, each having a suction port and a brush connected to the suction port, provided opposing the gas releasing surface. Either the cleaner or the gas dispersing device is moved so that the brush contacts and traverses the gas releasing surface.

Abstract: The invention provides a film-forming apparatus by a photo-CVD method comprising such essential structural elements as a light inlet in the form of a tube, a film-forming chamber, a light outlet in the form of a tube and a nozzle for feeding a mixture of a reactant and a gas for dilution so that a specific relation exists in the dimensions between the elements.With this structure, the film-forming apparatus by a photo-CVD method prevents the blur of the laser beam-incoming window due to contaminants adhered thereto, thereby enabling the extension of reaction time, increase of the deposition, and formation of a film with uniform thickness, and making the composition of the film closest to the stoichiometric one.

Abstract: A plasma system which eliminates damage derived from charged particles in the plasma and which is able to perform uniform plasma CVD and plasma etching on a large area substrate, wherein a mesh plate having a plurality of holes is placed at the interface of a plasma generation chamber and a substrate treatment chamber which holds a substrate, a high frequency electrical field being applied between an upper electrode in the plasma generation chamber and the mesh plate so as to disassociate the plasma forming gas by electrodischarge so as to cause the generation of plasma. By this, the plasma is isolated from the substrate. On the other hand, source gas supply ports are opened near the holes of the mesh plate, the source gas being introduced from there being brought into contact with the plasma through the holes, whereby the reaction product can be uniformly produced in a broad area.

Abstract: Ultraviolet (UV) light from a lamp (12) or laser (38) is provided for cracking Group V and Group VI species comprising clusters (dimers and tetramers) or metal-organic molecules to form monomers (atoms). The UV radiation interacts with a molecular beam (14) of Group V and Group VI species following their generation in a source cell (16), which may be an effusion source in molecular beam epitaxy (MBE) apparatus, a thermal cracker cell in gas-source MBE apparatus, or a gas injector cell in metal-organic MBE apparatus (MOMBE). As configured, the UV light source and associated elements comprise a unit, termed herein a "photo-cracker cell" (10). The photo-cracker cell includes an elliptical reflective cavity (18), which defines two foci. The source of UV light is located along one focus and the path of the molecular beam is located along the other focus substantially parallel thereto.

Abstract: Source evaporation machine for covering samples optionally by a mixture produced by several sources (3).Mobile covers (6) are placed between the sources (3) and the sample. The covers (6) are designed so as to ensure that the solid parts (23,24) and the openings (21,25) alternate and the sources (3) move relative to the covers in such a way that different circumferences of the covers pass in front of them. As the angular sectors surrounded by the openings differ for each circumference, the degree of hiding of the sources (3) can be regulated in a very accurate and reliable manner. It is possible to modify the flow of the source on the sample or, in the case of several sources, vary the composition of the deposited mixture.