Abstract: Disclosed are an apparatus and a method to synthesize powders typed diamond with the size between several tens nm to several &mgr;m in diameter using conventional CVD processes for deposition of diamond films. Gas phase nucleation has been induced on the boundary of plasmas, and as a result the spherical diamond powders accumulated have been obtained on circumferences of the normal substrate. With a modification of a substrate structure, a large area accumulation of the diamond powders of around 100 mm in diameter has been accomplished.

Abstract: A method for making p-type transparent conductive films and the corresponding system are disclosed. A laser beam is used as the evaporation source of a target, so that the target containing a group-III element vaporizes and forms a coating on a substrate. At the same time, a gas to be mingled into the coating is made into plasma to increase its activity. The gas contains a group-V element. The particles in the target have reactions with the plasma so that the coating thus formed contain both group-III and group-V elements, with the concentration of the group-V element higher than that of group-III element. This achieves the goal of making a p-type transparent conductive film.

Abstract: Systems and methods for creating a combinatorial coating library including a coating system operatively coupled to at least one of a plurality of materials suitable for forming at least one coating layer on a surface of one or more substrates. The systems and methods also including a curing system operative to apply at least one of a plurality of curing environments to each of a plurality of regions associated with the at least one coating layer, the curing system comprising a plurality of waveguides each having a first end corresponding to at least one of the plurality of regions and a second end associated with at least one curing source. The combinatorial coating library comprising a predetermined combination of at least one of the plurality of materials and at least one of the plurality of curing environments associated with each of the plurality of regions.

Abstract: An improved vacuum plasma etching device for plasma etching semiconductor wafers that have a photo-resist pattern. The improved plasma etching device has a reaction chamber in which the plasma etching is performed during a process cycle, an entrance vacuum loadlock for holding the next semiconductor wafer to be plasma etched, an exit vacuum loadlock for transporting the semiconductor wafers out of the reaction chamber after the plasma etching process, and a source of ultraviolet light. Exposing the semiconductor wafer to the ultraviolet light cures the photo-resist patterns, thereby improving CD dispersion, enhancing pattern transfer, and preventing photo-resist reticulation. Curing the photo-resist patterns while the semiconductor wafer is being held during the process cycle in the entrance vacuum loadlock, increases efficiency and productivity.

Abstract: A film deposition method and apparatus capable of forming a film on a substrate having a large area are provided. The film deposition method of forming a film by scattering a deposition material from a surface of a target material (14) and depositing the scattered deposition material onto a surface of a substrate (12), comprising a step of arranging the substrate (12) and the target material (14) such that the surface of the substrate (12) forms an angle to the surface of the target material (14), and a deposition step of forming the film on the substrate (12) in such a manner that an area of a film surface is continuously increased in a two-dimensional direction, while moving a relative position of the substrate (12) with respect to the target material (14).

Abstract: The present invention has several plausible embodiments. In one embodiment an apparatus for coating a medical device is provided. This apparatus includes a coating chamber, a vibrating structure within the coating chamber the vibrating structure capable of suspending a medical device positioned in the coating chamber, and a coating source, the coating source positioned to introduce coating into the coating chamber. In another embodiment a method of coating a medical device is provided. This method includes moving a medical device into a predetermined coating area, vibrating a structure below the medical device, the vibration of the structure forcing the medical device away from the vibrating structure, and coating at least a portion of the medical device that has moved away from the vibrating structure.

Abstract: The organic raw material is vaporized to generate the raw material gas in the vaporizing chamber. This raw material gas is mixed with the carrier gas, and transported to the chamber through the raw material gas transportation pipe. The substrate is held within the chamber while the organic film formation surface of the substrate does not face downward in a vertical direction straight up from the ground. The injector of the raw material gas is opposed to the substrate. The raw material gas is blasted from the direction orthogonal to the substrate. Particles fall without adhering to the substrate when holding the substrate in the vertical direction. The deformation of the substrate and the mask for separately painting pixels can be suppressed.

Abstract: An electromagnetic wave absorber (4) of a material that causes a large dielectric or magnetic loss is disposed so as to surround a region between a high-frequency wave transmitting window (3) and an antenna (32) to suppress the formation of a sanding wave by suppressing the reflection of microwaves.

Abstract: An atomic layer deposition method includes positioning a plurality of semiconductor wafers into an atomic layer deposition chamber. Deposition precursor is emitted from individual gas inlets associated with individual of the wafers received within the chamber effective to form a respective monolayer onto said individual wafers received within the chamber. After forming the monolayer, purge gas is emitted from individual gas inlets associated with individual of the wafers received within the chamber. An atomic layer deposition tool includes a subatmospheric load chamber, a subatmospheric transfer chamber and a plurality of atomic layer deposition chambers. Other aspects and implementations are disclosed.

Abstract: The present invention presents an improved baffle plate for a plasma processing system, wherein the design and fabrication of the baffle plate advantageously provides for a uniform processing plasma in the process space with substantially minimal erosion of the baffle plate.

Abstract: When a polycrystalline or single crystal silicon layer is grown by catalytic CVD, a catalyst having a nitride covering at least its surface is used. In case that tungsten is used as the catalyst, tungsten nitride is formed as the nitride. The nitride is made by heating the surface of the catalyst to a high temperature around 1600 to 2100° C. in an atmosphere containing nitrogen prior to the growth. When the catalyst is heated to the temperature for its use or its nitrification, it is held in a hydrogen atmosphere.

Abstract: Fabrication of a quantum dot functional structure having ultra-fine particles homogeneously distributed in a transparent medium includes depositing such particles having a single particle diameter and uniform structure onto a substrate with the transparent medium.

Abstract: An apparatus for preventing particulate matter and residue build-up within a vacuum exhaust line of a semiconductor processing device. The apparatus uses RF energy to form excite the constituents of particulate matter exhausted from a semiconductor processing chamber into a plasma state such that the constituents react to form gaseous products that may be pumped through the vacuum line. The apparatus may include a collection chamber structured and arranged to collect particulate matter flowing through the apparatus and inhibiting egress of the particulate matter from the apparatus. The apparatus may further include an electrostatic collector to enhance particle collection in the collection chamber and to further inhibit egress of the particulate matter.

Abstract: A method of forming a film on a substrate using one or more complexes containing one or more chelating O- and/or N-donor ligands. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.

Abstract: A tapered profile magnetic field pulsed laser deposition (PLD) system and method for depositing a thin film on a substrate are provided. The system includes a tapered pulsed coil arranged relative to a confinement magnetic device so that the plume discharged from the confinement magnetic device is collected and concentrated by an inwardly tapered surface of the tapered pulsed coil which causes the plume to be deflected towards a substrate on which the charged species are deposited to form the thin film. In yet a further aspect, a device for maintaining cleanliness of an interior of a deposition chamber laser entry window through which a laser beam enters and converges to a target is provided. A plume that is generated when a laser beam ablates the target is ionized as a result of radioactive members such that the ionized plume is deflected toward one of the first members (e.g., metal plates) as opposed to coating the interior of the laser entry window.

Abstract: A laser CVD device capable of tightening adhesion of a film formed by laser CVD to a film formation face of a substrate and preventing cracks from occurring in the film itself is to be provided. The device comprises a plasma pretreating unit for turning pretreating gas into a plasma state by arc discharge and for supplying the plasma sate gas to the film formation face; and a film forming unit having means for sealing film forming gas while being isolated from an external atmosphere, means for radiating a laser beam to the film forming gas, wherein the film is formed over the film formation face of the substrate.

Abstract: An apparatus for preventing particulate matter and residue build-up within a vacuum exhaust line of a semiconductor processing device. The apparatus uses RF energy to excite the constituents of particulate matter exhausted from a semiconductor processing chamber into a plasma state such that the constituents react to form gaseous products that may be pumped through the vacuum line. The apparatus may include a collection chamber structured and arranged to collect particulate matter flowing through the apparatus and inhibiting egress of the particulate matter from the apparatus. The apparatus may further include an electrostatic collector to enhance particle collection in the collection chamber and to further inhibit egress of the particulate matter.

Abstract: A particle film deposition apparatus and method are provided, with which ultra fine particles are generated by arc heating. The generated ultra fine particles can be efficiently sucked up into a transfer tube regardless of an arc voltage, and the resulting film can be stable in shape. An evaporation material 8 to be evaporated by arc heating and to generate ultra fine particles is connected to an electrode. As other electrodes, a plurality of rods 17 each having a discharge section at the tip thereof are provided. These rods 17 are so arranged as to be directed in each different direction with respect to the evaporation material 8.

Abstract: A method and apparatus for processing semiconductor substrates by reacting hydroxyl radicals with a precursor to cause the precursor to decompose and form a film which deposits on a substrate. Hydroxyl radicals, which are produced in a hydroxyl-ion producing apparatus outside of a chemical vapor deposition reactor, are mixed with a precursor to form a hydroxyl ions-precursor mixture. The hydroxyl ions-precursor mixture is introduced into the chemical vapor deposition reactor.

Abstract: The present invention provides a vapor deposition device suitable for multiface cutting by using a large area board, having a high efficiency of utilizing an EL material and excellent in uniformity of a film, wherein a board 13 and a vapor deposition mask 14 are mounted above board holding means 12, an interval between a vapor deposition source holder 17 and an object to be deposited (board 13) is narrowed to be equal to or smaller than 30 cm, preferably, equal to or smaller than 20 cm, further preferably, 5 through 15 cm and in vapor deposition, the vapor deposition source holder 17 is moved in the X direction or Y direction in accordance with an insulating member (referred to also as bank, partition wall) 10 and a shutter 15 is opened and closed to thereby form a film.

Abstract: The present invention is to fabricate a quantum dot functional structure having ultra-fine particles homogeneously distributed in a transparent medium by efficiently fabricating high-purity ultra-fine particles having a single particle diameter and uniform structure and depositing the ultra-fine particles onto a substrate in conjunction with the transparent medium. For these purposes, an apparatus for fabricating a quantum dot functional structure is provided.

Abstract: A process using ultraviolet light having a wavelength of 160 to 500 nanometers without higher wavelengths and a high intensity between about 1 and 40 watts/cm2 to surface treat a carbon containing fiber is described. The treated fiber contains an enhanced amount of oxygen on the surface which significantly improves the bondability of the fiber in composites.

Abstract: An ion beam irradiation apparatus is equipped with a plasma generator which generates a plasma and supplies it to a region in the vicinity of the upstream side of a substrate, thereby suppressing a charging up of a surface of the substrate, which results from an irradiation of the ion beam. The radio frequency electric source for supplying the plasma for generating the plasma to a plasma generator is a radio frequency electric source for producing a radio frequency electric power formed by amplitude modulating an original radio frequency signal.

Abstract: In the chemical vapor deposition apparatus, a substrate stage for mounting a substrate is provided inside a reaction chamber of the apparatus. A source gas inlet for introducing a source gas and exhaust outlets and for exhausting the source gas are provided. Exhaust outlet valves provided for exhaust outlets are open and shut successively with time. The direction of the flow of source gas relative to the fixed substrate varies with time. The present chemical vapor deposition apparatus allows the improved evenness of film thickness, the composition ratio, and the like within the substrate surface as well as the reduction of particles of foreign substance generated inside the reaction chamber.

Abstract: Systems and methods are disclosed to perform semiconductor processing with a process chamber; a flash lamp adapted to be repetitively triggered; and a controller coupled to the control input of the flash lamp to trigger the flash lamp. The system can deploy a solid state plasma source in parallel with the flash lamp in wafer processing.

Abstract: A rapid thermal anneal (RTA) chamber having one or multiple openings in a chamber wall and a reflective index monitor in the opening or openings, respectively. The reflective index monitor or monitors each measures the infrared reflective index of the reflector plate of the rapid thermal anneal chamber, and sends a corresponding signal to a process controller, an alarm, or both a process controller and an alarm. In the event that the measured reflective index of the reflector plate deviates from the reflective index of a control, the process controller terminates heating operation of the chamber to prevent damage to the semiconductor wafer in the chamber. The alarm may be activated to alert personnel to the need for immediate replacement of the contaminated reflector plate.

Abstract: The invention relates to an apparatus for growing thin-films onto a substrate by exposing the substrate to alternate surface reactions of vapor-phase reactants for forming a thin-film onto the, substrate by means of said surface reactions. The apparatus comprises a vacuum vessel (1), a reaction chamber (2) with a reaction space into which the substrate can be transferred and which has infred channels (6) for feeding therein the reactants used in said thin-film growth process, as well as outlet channels (4) for discharging gaseous reaction products and excess reactants'. According to the invention, said reaction chamber comprises a base part (9, 10) mounted stationary in respect to the interior of said vacuum vessel (1) and a movable part (18) adapted to be sealably closable against said'base part of said reaction chamber. The invention makes it possible to improve the cleanliness of the substrate load chamber and to reduce the degree of substrate contamination.

Abstract: This invention comprises a coating for equipment parts, particularly including chemical mechanical polishing equipment parts and other equipment that may experience wear or contaminant build-up. The coating includes a fluoropolymer based material that may also contain a colorant or pigment to visually contrast with particles or slurry that is deposited on the parts during use. In some embodiments, multiple layers are applied in contrasting colors so that when a layer closer to the surface begins to wear a lower layer will be readily visible, signaling that re-coating or replacement will soon be required.

Abstract: A semiconductor processing chamber having a motorized lid is provided. In one embodiment, the semiconductor processing chamber generally includes a chamber body having sidewalls and a bottom defining an interior volume. A lid assembly is coupled to the chamber body and is movable between a first position that encloses the interior volume and a second position. A hinge assembly thereto is coupled between the lid assembly and the chamber body. A motor is coupled to the hinge assembly to facilitate moving the lid assembly between the first position and the second position.

Abstract: The purpose of the invention is to provide a film formation apparatus capable of forming an EL layer with a high purity and a high density, and a cleaning method. The invention is a formation of an EL layer with a high density by heating a substrate 10 by a heating means for heating a substrate, decreasing the pressure of a film formation chamber with a pressure decreasing means (a vacuum pump such as a turbo-molecular pump, a dry pump, or a cryopump) connected to the film formation chamber to 5×10−3 Torr (0.665 Pa) or lower, preferably 1×10−3 Torr (0.133 Pa) or lower, and carrying out film formation by depositing organic compound materials from deposition sources. In the film formation chamber, cleaning of deposition masks is carried out by plasma.

Abstract: A thin film formation apparatus includes a vacuum chamber, a target holding mount held movably in the vacuum chamber, a target containing a film material, an ArF excimer laser for emitting high energy radiation to a surface of the target, an optical system for concentrating the radiation from the excimer laser to the surface of the target, a substrate holding mount holding the substrate, an oxidizing gas inlet for supplying an oxidizing gas into the vacuum chamber for oxidizing a substance deposited on the substrate, a heater placed inside the substrate holding mount for heating the substrate in the vacuum chamber, and a light for irradiating the substrate held on the substrate holding mount with light rays.

Abstract: The invention relates to an arrangement for coupling microwave energy into a plasma CVD coating chamber (3) located in a cavity resonator (1). Said arrangement has a microwave supply part (11) and a microwave guide (9, 1). The invention provides that in order to coat the insides of plastic containers of shapes and sizes that differ to a certain extent, the arrangement has an essentially cylindrical construction as follows: a first coaxial waveguide (in area a) is provided with an inner guide at the rear end, said inner guide being configured as an antenna (12). An approximately cylindrical waveguide (in area b) is connected in the middle and a second coaxial waveguide (1) is provided with an inner guide (13) at the front end (in area c). Gas can be introduced into the second coaxial waveguide (in area c) through a gas supply tube (13). Said gas is excited into a plasma state by the microwave energy that is coupled in and a TM mode is generated in the plasma range (1, c) by the antenna (12).

Abstract: In general, the present invention is directed to acoustically enhanced deposition processes, and a system for performing same. In one embodiment, the method comprises providing a substrate having a layer of insulating material formed thereabove, the layer of insulating material having a plurality of openings formed therein, performing a deposition process to form a layer of metal at least in the openings in the layer of insulating material, and actuating at least one acoustic generator to generate sound waves during the deposition process. In one illustrative embodiment, the system comprises a deposition tool for receiving a substrate having a layer of insulating material formed thereabove, the layer of insulating material having a plurality of openings formed therein, and performing a deposition process to form a layer of metal at least in the openings in the layer of insulating material, and at least one acoustic generator coupled to the deposition tool to generate sound waves during the deposition process.

Abstract: An apparatus and method for effectively and controllably vaporizing a solid precursor material is provided. In particular, the present invention provides an apparatus that includes a housing defining a sealed interior volume having an inlet for receiving a carrier gas, at least one surface within the housing for the application of a solid precursor, and a heating member for heating the solid precursor. The heating member can be located in the housing or in the surface within the housing. The surface can be a rod, baffle, mesh, or grating, and is preferably s-shaped or cone-shaped. Optionally, an outlet connects the housing to a reaction chamber. A method for vaporizing a solid precursor using the apparatus of the present invention is also provided.

Abstract: Apparatus for monitoring and controlling formation of organic layers by physical vapor deposition of organic materials in making organic light-emitting devices is disclosed.

Abstract: A single-substrate-processing apparatus includes an airtight process chamber in which a worktable is supported by a pedestal. The worktable has a mount face on which a plurality of ventilation grooves are formed. A plurality of ventilation holes and three lifter holes for lifter pins are formed vertically through the worktable. The gap space between the wafer and the mount face communicates with the inner space of the process chamber around the worktable and the wafer, through the ventilation grooves, the ventilation holes, and the lifter holes.

Abstract: A processing chamber of a plasma CVD device comprises a lower electrode for placing a semiconductor substrate thereon and an upper electrode provided at a position facing the lower electrode and provided with a concave portion on a surface thereof facing a surface of the lower electrode on which the substrate is placed. In deposition process using such a processing chamber, a contaminant removal sequence is provided between a deposition processing step and an exhausting step. During the deposition process, reactive gases SiH4 and NH3 for forming a Si3N4 film are supplied together with an inert gas N2 into the processing chamber. High-frequency electric power is applied between the electrodes to discharge the reactive gases so as to form the Si3N4 film on the semiconductor substrate.

Abstract: An apparatus for processing a workpiece in a micro-environment includes a workpiece housing connected to a motor for rotation. The workpiece housing forms a substantially closed processing chamber where processing fluids are distributed across at least one face of the workpiece by centrifugal force generated during rotation of the housing. The housing may also be detached from the motor and moved to another location. The housing consequently serves as a processing chamber, as well as a storage or transport chamber.

Abstract: A reactor for growing epitaxial layers includes a reaction chamber having a passthrough opening for inserting and removing wafer carriers from the reaction chamber. A reactor also includes a cylindrical shutter located inside the reaction chamber for selectively closing the passthrough opening. The cylindrical shutter is movable between a first position for closing the passthrough opening and a second position for opening the passthrough opening. The cylindrical shutter includes an internal cavity adapted to receive a cooling fluid and tubing for introducing the cooling fluid into the internal cavity. The tubing is permanently secured to the shutter and moves simultaneously therewith. The cylindrical shutter substantially surrounds an outer perimeter of the wafer carrier, thereby minimizing nonuniformity in the temperature and flow field characteristics of the reactant gases.

Abstract: A combinatorial synthesis system is provided which combines pulsed laser deposition techniques with the continuous composition spread technique in which a plurality of targets made of different ingredient materials are arranged in a predetermined relationship and are ablated by an energetic beam focused on the surface of a particular target. By maintaining the energetic beam in a stationary state, the target carousel is rotated so as to bring a particular target in engagement with the energetic beam. The targets are brought into engagement with the energetic beam in a predetermined sequence so that different materials are deposited onto the substrate in a predetermined sequence. Distributed deposition areas surround each deposition center and overlap each with the other to form a continuous compositional spread on the surface of the substrate.

Abstract: A system for processing a workpiece includes a base having a bowl or recess for holding a liquid. A process reactor or head holds a workpiece between an upper rotor and a lower rotor. A head lifter lowers the head holding the workpiece into contact with the liquid. Sonic energy is introduced into the liquid and acts on the workpiece to improve processing. The head spins the workpiece during or after contact with the liquid. The upper and lower rotors have side openings for loading and unloading a workpiece into the head. The rotors are axially moveable to align the side openings.

Abstract: The present invention relates to a novel method and apparatus for chemical bath deposition or other plating or similar processes. The deposition may be performed in a rotating drum that has been provided with a mechanism for temperature elevation. A substrate or other suitable recipient bed upon which deposition is sought may be removably attached to the interior of the drum. Reactants or other materials may be added to the drum to deposit a film, layer, or uniform particles on the surface of the substrate.

Abstract: A method of forming a multi-layered thin film uses photolysis chemical vapor deposition (PCVD). In the method, a substrate for a process of forming the multi-layered thin film is prepared. At least two source gases are supplied to the substrate. Reaction lights having particular wavelengths are prepared, which are absorbed by each of the source gases, are prepared. The reaction lights having particular wavelengths are alternatingly emitted on the substrate to a form a predetermined multi-layered thin film. A photolysis chemical vapor deposition (PCVD) reactor is disclosed, having a chamber with a substrate support, a gas supply system for supplying a plurality of source gases to the substrate in the chamber, and a light supply system mounted at one side of the chamber. The light supply system selectively emits one of the plurality of reaction lights having different wavelengths on the substrate.

Abstract: The invention includes a deposition system having a reservoir for containment of a metastable specie connected to a deposition chamber. The system includes a metastable specie generating catalyst within the reservoir. The invention also includes an atomic layer deposition apparatus having a deposition chamber that contains a substrate platform, first and second inlets and a dispersion head positioned between the inlets and the substrate platform. The ALD apparatus includes first and second metastable specie containment reservoirs in fluid communication with the deposition chamber through the inlets. One or more sources of carrier gas are configured to deliver carrier gas through at least one of the inlets. The invention also includes an atomic layer deposition method.

Abstract: According to one aspect of the invention, a method of processing a wafer is provided. The wafer is located in a wafer processing chamber of a system for processing a wafer. A silicon layer is then formed on the wafer while the wafer is located in the wafer processing chamber. The wafer is then transferred from the wafer processing chamber to a loadlock chamber of the system. Communication between the processing chamber and the loadlock chamber is closed off. The wafer is then exposed to ozone gas while located in the loadlock chamber, whereafter the wafer is removed from the loadlock chamber out of the system.

Abstract: [Object]

Abstract: This invention provides a firing jig for an electronic element comprising a spray coating layer made of a material less reactive to a material to be fired on a substrate made of a ceramic, wherein two or more spray coating layers are formed on the surface of the substrate, and at least a spray coating layer adjacent to the substrate and a spray coating layer adjacent to the material to be fired are made of different materials. When it is a firing jig for an electronic element comprising a ceramic substrate, a surface adjacent to the substrate is a spray coating layer and the surface of the spray coating layer is a flame coating layer. The firing jig for an electronic element has a longer life and can be produced with a lower cost.

Abstract: In the fine-particle classification apparatus of the present invention, a carrier gas velocity in a take-in section to introduce the aerosol to the fine-particle classification apparatus from the aerosol generation apparatus is increased so as to decrease the static pressure in the take-in section. It is thereby possible to decrease the static pressure in the take-in section than the total pressure in the aerosol generation apparatus. As a result, it is possible to introduce the aerosol inside the fine-particle classification apparatus with a total pressure equal to or higher than that in the aerosol generation apparatus from a fine particle generating area, i.e. aerosol generation apparatus with a pressure equal to or lower than that in the fine-particle classification apparatus.

Abstract: The metal film of the present invention is a dense film of a single crystal that has very low surface roughness and very good crystal orientation because an arithmetic mean roughness of the surface is not larger than 2 nm and a (111) peak intensity of X-ray diffraction is not less than 20 times the sum of all other peaks. Also the metal oxide film of the present invention is a dense film that includes less oxygen defects and almost no voids therein because a content of a non-oxidized metal is not higher than 1 mole % of a metal component that constitutes the metal oxide and a packing density is 0.98 or higher.

Abstract: Disclosed is a technique capable of suppressing the damage of a semiconductor manufacturing apparatus due to the breakage or the crack to the minimum by surely detecting the breakage or the crack on a part of a wafer in a semiconductor manufacturing apparatus of a multi-chamber system. An entire image of a wafer is photographed by a camera in each time when the wafer is processed, and the photographed image is processed by a discrimination unit, thereby determining the presence of the breakage or the crack on the wafer. When the breakage or the crack is detected, an error signal is transmitted from the discrimination unit to a computer that controls the semiconductor manufacturing apparatus, and the operations of the process chamber and the transport chamber used immediately before the detection of the breakage or the crack on the wafer are stopped.