Abstract: An improved Photo CVD apparatus having no window for ultraviolet light is shown. In the reaction chamber of the apparatus, an ultraviolet light source is placed directly in the chamber filled with the process gas so that no loss of light is there and high deposition speed is obtained. This structure is realized by providing extra rooms in the reaction chamber to protect the terminals of the electrodes.

Abstract: A method and apparatus is disclosed for permitting a plurality of substrates to be positioned within a magnetic field unique to each substrate so that the plurality of substrates may be placed in a vacuum chamber and concurrently coated with a thin film. A magnetic field unique to and associated with each substrate may be oriented so that all substrates have a uniform magnetic field and magnetic orientation. Alternatively, the magnetic field and orientation of each substrate may be individually tailored to produce a different magnetic characteristic for each substrates.

Abstract: An apparatus for photochemically forming a film on a substrate using a photo-induced chemical vapor deposition method comprises an optical lens through which a light beam is radiated to a reactive atmosphere gas to deposit and grow a film uniform in thickness on a substrate.

Abstract: A photo-CVD (chemical vapor deposition) apparatus is disclosed, in which at least two light transmission plates are used and the light from a light source is introduced into a gas reaction chamber through one of light transmission plates inserted into the chamber to cause the reactions in a reaction gas to thereby deposit a thin film or layer on a substrate located in the gas reaction chamber. In this case, a light transmission plate polluted by the reaction gas is moved to the outside of the chamber, then washed or exchanged with a new one manually or automaticaly while a clean one is inserted into the chamber, so that the photo-CVD process can be carried out continuously without interrupting the irradiation of the light from the light source.

Abstract: A surface treatment method, wherein gas particles are applied to a solid surface of a substrate to treat the same surface, comprising the step of applying to the gas particles the narrow line width laser light capable of exciting or decomposing only such gas particles that have velocities in a predetermined range.

Abstract: An apparatus for producing and coiling films of insulating material coated under a vacuum with electrically conductive material, comprising an electron beam vaporizer, a feed drum, a roller disposed above the electron beam vaporizer and looped by the film, a take-up drum, and deflector rolls for establishing a path for the film, at least one plasma source oriented towards the path of the film so that the plasma touches the film, said plasma source being disposed in the region of the path of the film from the electron beam vaporizer to the take-up drum, wherein the plasma source is disposed at the end of the angle of contact specified by one of the deflector rolls.

Abstract: A conventional microwave over has been modified such that it may be used for plasma etching and cleaning. Oxygen or Argon gas is introduced into a vacuum chamber (18) inside a conventional microwave oven (10) that has been modified to allow gas from a canister outside the microwave oven to pass through the rear wall of the microwave oven into the vacuum chamber (18). A rotating antenna (16) ignites the gas to produce a uniform plasma which etches the substrate (28). Reaction by products are evacuated from the vacuum chamber by a vacuum pump positioned outside the microwave oven (10). The intensity of the microwaves can be adjusted for plasma etching via a maximum power control device which has been added to the electronic control circuit of the microwave oven. In addition, a vacuum chamber with a water cooling feature is provided to prevent thermal damage to the substrate during plasma processing.

Abstract: An apparatus for forming a thin film in which the reactive gases, which have been activated by the reactive gas activation means, accelerated by the kinetic energy controlling means, and still more activated by the excimer laser beam emitted toward the neighborhood of the substrate from the excimer laser beam emitting means disposed outside of the vacuum chamber, react with the material to be deposited, which has been clustered or turned into the cluster ion by the ICB device and accelerated, to form a thin film of a compound as the material to be deposited on the substrate disposed within the vacuum chamber maintained at a predetermined degree of vacuum.

Abstract: An improved apparatus for the formation of a functional deposited film using a microwave plasma chemical vapor deposition process comprising a substantially enclosed deposition chamber having a deposition space, a supporting means for a substrate on which a functional deposited film is to be formed being placed in the deposition space, a means for supplying a raw material gas, a means for evacuating the inside of the deposition chamber, a microwave introducing means being provided with the wall of the deposition chamber and a waveguide being extended from a microwave power source, characterized in that said microwave introducing means is comprised of laminated two or more microwave transmissive plates made of a dielectric material and the surface of the outermost transmissive plate to become faced to the deposition space is of a roughened surface having a roughness of 1.5 .mu.m to about 1 cm for the height between the projection and the depression by the arithmetic mean for at least selected ten points.

Abstract: An apparatus wherein a beam of substantially coherent light passes through a window in a chamber and then through the chamber in a direction substantially parallel, and contiguous, to substrates in the chamber. The beam ionizes gases in a mixture in the chamber. The ionized gases combine to form a substance which becomes deposited on the substrate(s) as a layer or which etches a previously deposited layer on the substrate. As the beam moves through the chamber, it loses energy.

Abstract: An improved chemical vapor reaction system is described. The system is characterized by its light source which radiates ultraviolet light to a substrate to be processed. Before the light source, an obturating plate is placed so that the intensity of the light source is apparently reduced at the center position. With this light, the substrate is irradiated with light having uniform intensity over the surface of the substrate to be processed.

Abstract: In a laser CVD device, immediately before being emitted from a nozzle, raw gas in a reaction chamber reacts opto-chemically with a focused laser beam so that it is decomposed to form a radical flow. The radical flow flows against a substrate set in the reaction chamber so that active materials produced by the optochemical decomposition accumulate on the substrate to form a thin film thereon.

Abstract: An apparatus according to the present invention for thin film formation using a photo-induced chemical reaction comprises a reaction chamber in which a substrate can be set, means to introduce a reactive gas into the reaction chamber for the purpose of causing a surface of the substrate to adsorb the reactive gas, means to evacuate the reaction chamber, means to irradiate the substrate surface having adsorbed the reactive gas with photon energy for the purpose of forming a nucleus required for growing a film on the substrate surface, means to generate metastable excited molecules which can react with the reactive gas to decompose it, and means to introduce the reactive gas and the metastable excited molecules into the reaction chamber for the purpose of growing the film on the substrate formed with the nucleus on the basis of the nucleus.

Abstract: An apparatus for photochemically processing a silicon wafer placed in a reactive gas by an illuminating energy for etching or film forming purposes. The apparatus includes a reaction chamber in which the silicon wafer is positioned and the reaction chamber is filled with a gas which is photochemically reactive to the illuminating energy. An opening is formed through the wall of the reaction chamber and the silicon wafer is positioned within the chamber apart from the opening. Condensing means for condensing the light energy from the illuminating energy radiating means at around the opening and directing the same into the chamber is arranged outside the chamber.

Abstract: Arsine or phosphine are thermally decomposed to form a molecular beam of arsenic or phosphorous by using the inside surfaces of a thermal decomposition duct (11) made of quartz or of boron nitride and heated on the outside by radiation from a filament (30). Pierced internal partitions (6a, 6b, 6c, 6d) having successive circumferentially offset holes (6p, 6q, 6r, 6s) increase the decomposition surface area and prevent a molecule from passing through the duct along a straight line.

Abstract: Apparatus and method for evaporation arc stabilization including a target having a surface of material of non-permeable material to be evaporated; circuitry for establishing an arc on the target surface for evaporating the target material, the arc being characterized by the presence of charged particles and a cathode spot which randomly migrates over the target surface; and a confinement ring surrounding the target surface, the ring being composed of a magnetically permeable material to thereby confine the cathode spot to the target surface.

Abstract: Vapor deposition coating can be performed in apparatus in which a plasma of the coating material is generated from the surface of an electrode. The surface area of the electrode from which the plasma is generated can be selectively adjusted by exposing the plasma generating surface of the electrode to the influence of a magnetic field and adjusting the strength of the magnetic field to spread plasma over the evaporative surface of the electrode to permit more efficient utilization of the electrode. Preferably, the electrode is in the form of a flat metal disc (e.g. titanium) and the magnetic field is generated by a wire coil that substantially encircles or is coaxial to the electrode, with the electrode or an associated element functioning as a core for the coil.

Abstract: A magnetic metal deposition material contained in a hearth is heated and evaporated in a vacuum to form a flow of vapor, which is then ionized and converged toward a predetermined deposition surface of a flexible substrate. The flexible substrate is moved obliquely downwardly along a convex course by sliding contact with the curved surface of a fixed curved guiding body between a pair of guide rollers located at different heights above the hearth. The fixed curved guiding body communicates with a coolant source for cooling the substrate moving in contact therewith and may be provided with oscillators. Thus a thin film of the magnetic metal is deposited on the convex surface of the substrate.

Abstract: An improvement in the method of forming polymerization resists by directing high energy particles such as electron beams along a path across a vacuum chamber and onto polymerizable molecular species at a substrate surface with sufficient energy to polymerize the polymerizable molecular species in situ is provided, comprising maintaining a chamber-isolated relatively higher pressure layer of polymerizable molecular species vapor locally at the substrate surface during, e.g. electron beam exposure to form the resist while maintaining the beam path free of polymerizable molecular species during beam traverse of the chamber. Polymerization resist generation apparatus is also provided comprising a high energy particle, e.g.

Abstract: An apparatus for producing improved large area photovoltaic devices by substantially reducing the warpage of relatively large area, relatively thin webs of magnetic substrate material which travel through a plurality of high temperature, low pressure glow discharge deposition chambers. As the web of the substrate material moves through the deposition chambers, it assumes a normal, elongated path of travel. Due to the elevated deposition temperature, the elongated path of travel, the force of gravity, etc., the web has a tendency to warp. Warpage of the web is undesirable as it promotes the deposition of non-uniform semiconductor alloy layers. The improvement of the present invention contemplates the establishment of at least one magnetic field within each deposition chamber which is adapted to urge the web of substrate material out of its normal path of travel into a flat, substantially planar path of travel.

Abstract: An improvement in the method of forming polymerization resists by directing high energy particles such as electron beams along a path across a vacuum chamber and onto polymerizable molecular species at a substrate surface with sufficient energy to polymerize the polymerizable molecular species in situ is provided, comprising maintaining a chamber-isolated relatively higher pressure layer of polymerizable molecular species vapor locally at the substrate surface during, e.g. electron beam exposure to form the resist while maintaining the beam path free of polymerizable molecular species during beam traverse of the chamber. Polymerization resist generation apparatus is also provided comprising a high energy particle, e.g.

Abstract: An apparatus and method for coating a substrate with a thin film of material. The coating material is converted to a mist by means of an ultrasonic nebulizer and transported by a carrier gas to a chamber which contains the substrate where the mist is allowed to settle onto the substrate under the force of gravity. Sonic means are also provided to increase the settling rate of the mist droplets to lessen the settling time. Means are also provided to maintain the volume and concentration of the coating material in the nebulizer chamber over successive coatings.

Abstract: The porosity of bulk alloys produced by deposition of the components of the alloy from the vapor phase can be reduced if the surface of the alloy is mechanically worked, preferably by a peening action, during the course of the deposition.Suitable apparatus for mechanically working the surface of the alloy are sets of hammers or flails driven by a suitable means that they strike the surface of the alloy with sufficient force to flatten asperities produced during the course of the deposition and preferably sufficient to remove porosity adjacent to the surface, yet do not at the same time grossly distort the surface of the alloy.

Abstract: One shot coating of powdered material with a metal film is achieved by allowing the material to fall through a vertical refractory cylinder, the inside of which is covered with the metal. The process takes place in a vacuum chamber and the cylinder is heated to evaporate the metal onto the falling material as it passes through the cylinder.

Abstract: A cage for low pressure chemical depositions reactors to provide for the relatively uniform deposition of silicon dioxide and phosphorus doped polysilicon along the length of a reactor by the chemical decomposition of silane. The cage is comprised of an open structure, generally surrounding semiconductor wafers supported on boats within the reactor, so as to discourage preferential deposition rates adjacent the silane inlet region of the reactor, and to encourage a more uniform distribution of the decomposable gas along the reactor length to effect more uniform deposition rates than previously accomplished. The open structure helps to quickly develop the flow along the reactor so that the flow quickly stabilizes adjacent the inlet end of the reactor and remains substantially uniform thereafter. Longitudinal alignment of the major elements of the cage provides continuous flow surfaces along the length of the reactor.

Abstract: A method and apparatus for modifying a surface, by either plasma etching the surface or plasma depositing a material thereon, by using vacuum ultraviolet radiation to control the modification of the surface.

Abstract: A device for feeding materials to an evaporator of a vapor deposition apparatus comprises a balance onto which material to be evaporated is fed and an ejector associated with the balance and responsive to a predetermined weight of the substance on the balance to eject the substance from the balance through a trajectory path and into the evaporator.